CN211208449U - Array substrate, flat panel detector and imaging device - Google Patents
Array substrate, flat panel detector and imaging device Download PDFInfo
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- CN211208449U CN211208449U CN202020104292.4U CN202020104292U CN211208449U CN 211208449 U CN211208449 U CN 211208449U CN 202020104292 U CN202020104292 U CN 202020104292U CN 211208449 U CN211208449 U CN 211208449U
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Abstract
The utility model discloses an array substrate, a flat panel detector and an imaging device, wherein the array substrate comprises a substrate; the driving circuit layer is formed on the substrate and comprises thin film transistors arranged in an array; the photoelectric detection layer is formed on the driving circuit layer and comprises photoelectric detectors which correspond to the thin film transistors arranged in the array one by one, and each photoelectric detector detects incident light and outputs an electric signal to the corresponding thin film transistor; and the passivation layer is formed on the photoelectric detection layer and comprises at least two passivation sublayers, and the refractive index of each passivation sublayer is sequentially decreased from near to far according to the distance from the substrate. The embodiment provided by the utility model the passivation sublayer that descends progressively carries out the absorptivity of emitting in order to increase the incident light entirely to the emergent light through the refracting index that sets up on photoelectric detector to improve photoelectric detector's detectivity, have extensive application prospect.
Description
Technical Field
The utility model relates to a photoelectric technology field especially relates to an array substrate, flat panel detector and image equipment.
Background
In recent years, flat panel detection technologies are dramatically developed, which can be divided into direct and indirect types, the key component of an indirect flat panel detector is a Flat Panel Detector (FPD) for acquiring images, an X-ray flat panel detector includes an array substrate and an X-ray conversion layer, and each photodetector of the array substrate includes an amorphous silicon photodiode. The amorphous silicon photodiode starts to work under the action of reverse voltage, when X rays irradiate the array substrate, the X ray conversion layer converts the X rays into visible light, then the amorphous silicon photodiode converts the visible light into an electric signal and stores the electric signal, the thin film transistors are started line by line under the action of the driving circuit, the electric charge converted by the photodiode is transmitted to the data processing circuit, and the data processing circuit can further amplify, convert analog/digital and the like on the electric signal to finally obtain image information.
The amorphous silicon film in the amorphous silicon photodiode has a light-induced degradation effect, so that the photoelectric conversion efficiency of the photodiode is reduced after the photodiode is illuminated for a long time. In order to reduce the occurrence of the light-induced degradation phenomenon, the thickness of the amorphous silicon thin film can be reduced, and the thickness of the amorphous silicon thin film is reduced, so that incident light cannot be sufficiently absorbed, a large amount of light can penetrate through the photodiode element, and the conversion efficiency of the photodiode is reduced.
Therefore, how to improve the utilization rate of incident light becomes a technical problem to be solved urgently in the field.
SUMMERY OF THE UTILITY MODEL
In order to solve at least one of the above problems, the present invention provides an array substrate, including
A substrate;
a driving circuit layer formed on the substrate;
a photodetection layer formed on the driving circuit layer; and
a passivation layer formed on the photodetection layer, wherein,
the driving circuit layer comprises thin film transistors arranged in an array;
the photoelectric detection layer comprises photoelectric detectors which correspond to the thin film transistors arranged in the array one by one, and each photoelectric detector detects incident light and outputs an electric signal to the corresponding thin film transistor;
the passivation layer comprises at least two passivation sublayers, and the refractive index of each passivation sublayer is sequentially decreased from near to far according to the distance from the substrate.
Further, the array substrate further comprises a planarization layer located between the photo detection layer and the passivation layer, wherein the planarization layer comprises a first opening penetrating the planarization layer to expose the driving circuit layer and a plurality of island regions surrounded by the first opening, wherein each island region covers one photo detector.
Further, the photodetector includes
A first electrode formed on the driving circuit layer;
a PIN structure formed on the first electrode;
a second electrode formed on the PIN structure;
a first protective layer covering the second electrode, wherein a refractive index of the first protective layer is greater than a refractive index of a passivation sublayer closest to the second electrode.
Further, the array substrate further comprises
A second opening penetrating the passivation layer to expose the second electrode;
a metal trace formed in the second opening, the metal trace being electrically connected to the second electrode.
Further, the array substrate further comprises a second protective layer covering the metal routing and the exposed passivation layer, and the refractive index of the second protective layer is smaller than that of the passivation sub-layer farthest from the second electrode.
Further, the second electrode is a transparent electrode.
Further, the first electrode is a reflective electrode.
Further, the planarization layer is a photosensitive organic resin insulating layer.
The second aspect of the utility model provides a flat panel detector, include
An array substrate according to the first aspect; and
and the non-visible light conversion layer covers the array substrate.
The utility model discloses the third aspect provides an image device, including the second aspect flat panel detector.
The utility model has the advantages as follows:
the utility model discloses to present problem, formulate an array substrate, flat panel detector and image equipment, carry out the absorptivity in order to increase the incident light through the passivation sublayer that sets up the refracting index degressive gradually on photoelectric detector to the emergent light to improve photoelectric detector's detectivity, effectively compensatied the problem among the prior art, had extensive application prospect.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an array substrate according to still another embodiment of the present invention;
fig. 3 is a schematic optical path diagram of an array substrate according to an embodiment of the present invention;
fig. 4 is a schematic optical path diagram of an array substrate according to another embodiment of the present invention;
fig. 5 is a schematic optical path diagram of an array substrate according to still another embodiment of the present invention.
Detailed Description
In order to explain the present invention more clearly, the present invention will be further described with reference to the preferred embodiments and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
It is noted that references herein to "on … …", "formed on … …" and "disposed on … …" can mean that one layer is formed or disposed directly on another layer or that one layer is formed or disposed indirectly on another layer, i.e., there is another layer between the two layers. As used herein, unless otherwise specified, the term "on the same layer" means that two layers, components, members, elements or portions can be formed by the same patterning process, and the two layers, components, members, elements or portions are generally formed of the same material. Herein, unless otherwise specified, the expression "patterning process" generally includes the steps of coating of photoresist, exposure, development, etching, stripping of photoresist, and the like. The expression "one-time patterning process" means a process of forming a patterned layer, member, or the like using one mask plate.
As shown in fig. 1, one embodiment of the present invention provides an array substrate, including a substrate 10; a driving circuit layer 20 formed on the substrate 10; a photodetection layer formed on the driving circuit layer 20; and a passivation layer 40 formed on the photodetection layer, wherein the driving circuit layer includes thin film transistors arranged in an array; the photoelectric detection layer comprises photoelectric detectors 30 which correspond to the thin film transistors arranged in the array one by one, and each photoelectric detector 30 detects incident light and outputs an electric signal to the corresponding thin film transistor; the passivation layer 40 includes at least two passivation sublayers, and refractive indexes of the passivation sublayers decrease sequentially from near to far according to a distance from the substrate 10.
In this embodiment, the passivation layer 40 includes a first passivation layer 41 and a second passivation layer 42 sequentially stacked on the photodetector 30, wherein the refractive index of the first passivation layer 41 is greater than the refractive index of the second passivation layer 42. Specifically, the first passivation sublayer 41 may be TiO2 having a refractive index of 2.0 to 3.0, and the second passivation sublayer 42 may be silicon nitride or silicon oxide having a refractive index of 1.5 to 2.0.
In view of further improving the absorption efficiency of the photodetectors for incident light and improving the detection sensitivity, in an alternative embodiment, as shown in fig. 2, the array substrate further includes a planarization layer 50 located between the photodetector layer and the passivation layer, wherein the planarization layer 50 includes a first opening 51 penetrating the planarization layer 50 to expose the driving circuit layer and a plurality of island regions surrounded by the first opening 51, wherein each island region covers one photodetector 30.
In this embodiment, the planarization layer is a photosensitive organic resin insulating layer. By the planarization layer 50 disposed between the photo-detection layer and the passivation layer 40, on one hand, the photo-detectors 30 are planarized and protected, and on the other hand, a planarization island covering one photo-detector is formed by surrounding the first opening 51 of each photo-detector 30, thereby effectively reducing the lateral propagation of incident light in the planarization layer 50, improving the absorption rate of the photo-detectors for the incident light, and further improving the detection sensitivity of the photo-detectors.
Based on the array substrate, as shown in fig. 3, when light incident on the array substrate obliquely enters the interface between the first passivation sub-layer 41 and the second passivation sub-layer 42, the light is reflected, and when the incident angle α is greater than the total reflection angle, the obliquely incident light is totally reflected to the first electrode 31 and is then reflected back to the PIN structure 32. further, even when the incident angle α is smaller than the total reflection angle, part of the incident light is still reflected back to the PIN structure 32 and is converted into an electrical signal through the PIN structure 32. therefore, the lateral propagation of the external incident light in the array substrate can be reduced by the first passivation sub-layer 41 and the second passivation sub-layer 42 with gradually decreasing refractive indexes, so that the absorption rate of the PIN structure 32 to the incident light is improved, and the detection sensitivity of the photodetector is effectively improved.
Similarly, as shown in fig. 4, when there is light that is not completely absorbed by the PIN structure 32, and the light exits from the PIN structure 32 and is reflected to the interface between the first passivation sublayer 41 and the second passivation sublayer 42 through the first electrode 31, since the refractive index of the first passivation sublayer 41 is greater than that of the second passivation sublayer 42, the exiting light is totally reflected on the interface between the first passivation sublayer 41 and the second passivation sublayer 42, and is reflected back into the PIN structure 32, and is converted into an electrical signal through the PIN structure 32. It is to be noted that even if the outgoing light is not totally reflected at the interface of the first passivation layer 41 and the second passivation layer 42, the outgoing light is still reflected back into the PIN structure.
In an alternative embodiment, as shown in fig. 1 and 2, the photodetector 30 includes a first electrode 31 formed on the driving circuit layer; a PIN structure 32 formed on the first electrode 31; a second electrode 33 formed on the PIN structure 32; a first protective layer 34 covering the second electrode 33, wherein the refractive index of the first protective layer 34 is larger than the refractive index of the passivation sub-layer closest to the second electrode 33.
In the present embodiment, each of the photo-detectors 30 includes a first electrode 31, a second electrode 33, and a PIN structure 32 located between the first electrode 31 and the second electrode 33, and the PIN structure 32 detects incident light and outputs an electrical signal in response to voltages applied to the first electrode 31 and the second electrode 33, and the electrical signal is transmitted to a corresponding thin film transistor in the driving circuit layer 20 through the first electrode 31.
Meanwhile, in the present embodiment, in view of protection of the first electrode 31, the PIN structure 32, and the second electrode 33, the photodetector 30 further includes a first protective layer 34 covering the second electrode 33, where the first protective layer 34 is a film structure including at least one layer of silicon oxide or silicon nitride, or a multi-film structure including a stack of silicon oxide and silicon nitride, and a refractive index of the first protective layer 34 is greater than a refractive index of a passivation sublayer closest to the first electrode 31. In other words, in consideration of a transmission optical path of incident light in the array substrate, the refractive index of the first protective layer 34 is set to be greater than the refractive index of the passivation sublayer closest to the second electrode 33, that is, the refractive index of the first passivation sublayer 41, so that the refractive indexes of the film layers outside the PIN structure from inside to outside are sequentially decreased, the absorption rate of the photodetector on the incident light is further improved, and the detection sensitivity of the photodetector is improved.
In this embodiment, the second electrode of the photodetector is a transparent electrode, for example, a transparent electrode made of ITO. The first electrode of the photodetector is a reflective electrode, such as a conductive reflective metal film layer, which can reflect an incident light signal that is not converted into an electrical signal back into the PIN structure to improve the absorption rate of the photodetector for the incident light. The PIN structure is a photodiode and comprises an N-type amorphous silicon layer film, an intrinsic amorphous silicon layer film and a P-type amorphous silicon layer film, and the thickness of the PIN structure is larger than 2 mu m and smaller than 5 mu m.
In view of applying a voltage to the second electrode 33 of the photodetector 30, as shown in fig. 1 or fig. 2, in an alternative embodiment, the array substrate further includes a second opening 70 penetrating the passivation layer 40 to expose the second electrode 33; a metal trace 60 formed in the second opening 70, the metal trace 60 being electrically connected to the second electrode 33.
In this embodiment, a second opening is formed in the passivation layer, the second opening penetrates through the passivation layer to the second electrode, and a metal trace 60 is formed in the second opening, and the metal trace is connected to the second electrode so as to load an externally loaded control voltage on the second electrode, thereby enabling the PIN structure to perform photoelectric conversion in response to incident light.
It should be noted that the metal trace 60 is used for applying a voltage to the second electrode, and may be formed only in the second opening, or may extend from the second opening to the passivation layer.
In view of protecting the passivation layer and the metal traces, in an alternative embodiment, as shown in fig. 1 or 2, the array substrate further includes a second protective layer 80 covering the metal traces 60 and the exposed passivation layer 40, and the refractive index of the second protective layer 80 is smaller than the refractive index of the passivation sub-layer farthest from the second electrode 33.
In this embodiment, the second protection layer 80 disposed on the outermost layer protects the metal trace 60, the exposed passivation layer 40 and the photodetector 30, and the refractive index of the second protection layer 80 is set to be smaller than the refractive index of the second passivation layer 42, so that the refractive indexes of the film layers outside the PIN structure from inside to outside decrease gradually in sequence, the absorption rate of the PIN structure to incident light is further improved, and the detection sensitivity of the photodetector is improved.
As shown in fig. 5, the incident light obliquely incident on the array substrate is totally reflected or not totally reflected at the interface between the second passivation sub-layer 42 and the second protection layer 80, and the incident light is reflected back to the PIN structure 30, so that the absorption rate of the PIN structure to the incident light is improved, and the detection sensitivity of the photodetector is improved.
In a specific example, as shown in fig. 2, the array substrate includes a substrate; the driving circuit layer is formed on the substrate and comprises a plurality of thin film transistors arranged in an array mode, and the thin film transistors comprise grids, active layers, sources and drains which are formed on the substrate; the photoelectric detection layer is formed on the driving circuit layer and comprises photoelectric detectors which correspond to the thin film transistors arranged in the array one by one, each photoelectric detector comprises a first electrode, a PIN structure, a second electrode and a first protective layer which are sequentially formed on the driving circuit layer in a stacking mode, the orthographic projection of each photoelectric detector on the substrate is not overlapped with the orthographic projection of the corresponding thin film transistor on the substrate, and the first electrode of each photoelectric detector is electrically connected with the source electrode or the drain electrode of the corresponding thin film transistor; a planarization layer covering the photodetectors, including a first opening penetrating the planarization layer to expose the driving circuit layer, and a plurality of island regions surrounded by the first opening, wherein each island region covers one photodetector; a passivation layer covering the planarization layer, including a second opening penetrating the passivation layer to expose the second electrode, and a metal trace formed in the second opening, the metal trace being electrically connected to the second electrode; and the second protective layer covers the metal routing and the exposed passivation layer.
In the process of manufacturing the array substrate of this embodiment, the method specifically includes:
firstly, a driving circuit layer is formed on the substrate, the driving circuit layer comprises a thin film transistor, and the method specifically comprises the following steps: the manufacturing method of the thin film transistor comprises the steps of forming a grid electrode on substrate glass, forming a grid electrode insulating layer covering the grid electrode, forming an active layer on the grid electrode insulating layer, wherein the active layer is a-Si or IGZO and the like, a source electrode and a drain electrode which are respectively electrically connected with the active layer cover a dielectric layer of the thin film transistor, and the dielectric layer can reduce parasitic capacitance.
Secondly, a photoelectric detection layer is formed on the driving circuit layer and comprises photoelectric detectors which correspond to the thin film transistors arranged in the array in a one-to-one mode, and each photoelectric detector comprises a first electrode formed on the driving circuit layer, a PIN structure formed on the first electrode, a second electrode formed on the PIN structure and a first protective layer covering the first electrode, the exposed PIN structure and the exposed first electrode.
Meanwhile, in order to avoid the influence of the manufacturing process of forming the PIN structure on the performance of the thin film transistor of the driving circuit, the photoelectric detector and the thin film transistor are staggered, namely the orthographic projection of the photoelectric detector on the substrate is not overlapped with the orthographic projection of the corresponding thin film transistor on the substrate.
Meanwhile, the first electrode of the photoelectric detector is electrically connected with the source electrode or the drain electrode of the corresponding thin film transistor, so that the electric signal converted by the PIN structure can be transmitted.
And thirdly, forming a planarization layer covering the photoelectric detectors, wherein the planarization layer comprises the photoelectric detectors, a first opening penetrating through the planarization layer to expose the driving circuit layer and a plurality of island regions surrounded by the first opening, and each island region covers one photoelectric detector, so that the lateral propagation of incident light in the planarization layer is effectively reduced, the absorptivity of the PIN structure to the incident light is improved, and the detection sensitivity of the photoelectric detectors is improved.
Fourthly, a passivation layer covering the planarization layer is formed, the passivation layer comprises at least two passivation sublayers, and the refractive index of each passivation sublayer is sequentially decreased from near to far according to the distance from the first electrode. The external incident light is easy to enter and is not easy to emit out through the passivation sublayers with the gradually decreased refractive indexes, so that the absorption rate of the PIN structure to the incident light is improved, and the detection sensitivity of the photoelectric detector is effectively improved.
And fifthly, forming a second opening penetrating through the passivation layer to expose the second electrode, and forming a metal wire in the second opening, wherein the metal wire is electrically connected with the second electrode so as to apply voltage to the first electrode.
And finally, forming a second protective layer covering the metal routing and the exposed passivation layer, wherein the refractive index of the second protective layer is smaller than that of the passivation sub-layer farthest from the first electrode. The refractive indexes of all film layers outside the PIN structure from inside to outside are gradually decreased, so that the absorption rate of the PIN structure to incident light is further improved, and the detection sensitivity of the photoelectric detector is improved.
Thus, the array substrate of the present embodiment is formed. It should be noted that, a person skilled in the art should set a specific preparation process of the array substrate according to actual application requirements, which is not limited in the present application, so as to improve the absorption rate of the PIN structure to incident light as a design criterion, and details are not described herein again.
Based on above-mentioned array substrate, the utility model discloses still provide a flat panel detector, including above-mentioned array substrate to and the non-visible light conversion layer that covers this array substrate. The visible light conversion layer converts invisible light, such as X-rays, infrared rays, and ultraviolet rays, into visible light. At this time, the photodetectors on the array substrate can detect the visible light irradiated into each photodetector and convert the visible light into an electrical signal. On the basis, the flat panel detector further comprises an image processor, and the image processor is used for receiving the detection result and obtaining a detection image according to the detection result of each photoelectric detector.
It should be noted that the flat panel detector has the same technical effects as the array substrate provided in the foregoing embodiments, and details are not repeated herein. In addition, the application does not limit the application range of the flat panel detector, and can be applied to the fields of medical treatment, safety, nondestructive testing, scientific research and the like.
Based on above-mentioned flat panel detector, the utility model discloses still provide an image equipment, including foretell flat panel detector, have the same beneficial effect with the flat panel detector that aforementioned embodiment provided, no longer describe here. In addition, the imaging device can further comprise an image analysis component, and the image analysis component is used for analyzing the acquired image acquired by the flat panel detector and obtaining an analysis result for a technician to use or refer to.
The utility model discloses to present problem, formulate an array substrate, flat panel detector and image equipment, carry out the absorptivity in order to increase the incident light through the passivation sublayer that sets up the refracting index degressive gradually on photoelectric detector to the emergent light to improve photoelectric detector's detectivity, effectively compensatied the problem among the prior art, had extensive application prospect.
Obviously, the above embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it is obvious for those skilled in the art to make other variations or changes based on the above descriptions, and all the embodiments cannot be exhausted here, and all the obvious variations or changes that belong to the technical solutions of the present invention are still in the protection scope of the present invention.
Claims (10)
1. An array substrate, comprising
A substrate;
a driving circuit layer formed on the substrate;
a photodetection layer formed on the driving circuit layer; and
a passivation layer formed on the photodetection layer, wherein,
the driving circuit layer comprises thin film transistors arranged in an array;
the photoelectric detection layer comprises photoelectric detectors which correspond to the thin film transistors arranged in the array one by one, and each photoelectric detector detects incident light and outputs an electric signal to the corresponding thin film transistor;
the passivation layer comprises at least two passivation sublayers, and the refractive index of each passivation sublayer is sequentially decreased from near to far according to the distance from the substrate.
2. The array substrate of claim 1, further comprising a planarization layer between the photo detection layer and the passivation layer, wherein the planarization layer comprises a first opening through the planarization layer to expose the driving circuit layer and a plurality of islands surrounded by the first opening, wherein each island covers one photo detector.
3. The array substrate of claim 1 or 2, wherein the photodetector comprises
A first electrode formed on the driving circuit layer;
a PIN structure formed on the first electrode;
a second electrode formed on the PIN structure;
a first protective layer covering the second electrode, wherein a refractive index of the first protective layer is greater than a refractive index of a passivation sublayer closest to the second electrode.
4. The array substrate of claim 3, further comprising a second opening through the passivation layer to expose the second electrode;
a metal trace formed in the second opening, the metal trace being electrically connected to the second electrode.
5. The array substrate of claim 4, further comprising a second protective layer covering the metal traces and the exposed passivation layer, wherein a refractive index of the second protective layer is less than a refractive index of a passivation sub-layer farthest from the second electrode.
6. The array substrate of claim 3,
the second electrode is a transparent electrode.
7. The array substrate of claim 3,
the first electrode is a reflective electrode.
8. The array substrate of claim 2, wherein the planarization layer is a photosensitive organic resin insulating layer.
9. A flat panel detector is characterized by comprising
An array substrate according to any one of claims 1 to 8; and
and the non-visible light conversion layer covers the array substrate.
10. An imaging apparatus comprising the flat panel detector of claim 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113325459A (en) * | 2021-05-28 | 2021-08-31 | 京东方科技集团股份有限公司 | Flat panel detector, preparation method thereof and photographic equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113325459A (en) * | 2021-05-28 | 2021-08-31 | 京东方科技集团股份有限公司 | Flat panel detector, preparation method thereof and photographic equipment |
| CN113325459B (en) * | 2021-05-28 | 2024-04-12 | 京东方科技集团股份有限公司 | Flat panel detector, preparation method thereof and photographing equipment |
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