CN211199390U - Semiconductor device - Google Patents

Abstract

The utility model provides a semiconductor device, include: a growth chamber; a susceptor disposed within the growth chamber, the susceptor allowing a substrate to be disposed; the target is arranged in the growth cavity; magnets arranged at opposite positions of the target; the magnet is connected with a driving mechanism, the driving mechanism drives the magnet to move or rotate, and the distance between the magnet and the target material is allowed to be adjusted. The utility model provides a semiconductor equipment reasonable in design, simple structure can improve the homogeneity of coating film.

Description

Semiconductor device

Technical Field

The utility model relates to a semiconductor field, in particular to semiconductor equipment.

Background

In the microelectronic product industry, magnetron sputtering technology is highly regarded by manufacturers as one of important means for producing integrated circuits, liquid crystal displays, thin-film solar cells, L ED and other products, and sputtering refers to a phenomenon that energetic particles (such as argon ions) bombard a solid surface to cause various particles (such as atoms, molecules or cluster beams) on the surface to escape from the surface of an object.

In the process, the magnetron sputtering process can be as follows: electrons in the process chamber move towards the substrate under the action of an electric field and collide with argon atoms in the process of flying to the substrate, so that the argon atoms are ionized to obtain positively charged argon ions and secondary electrons; wherein, the argon ions obtain momentum in the process of accelerating movement towards the target material with negative potential, and bombard the target material to sputter the target material so as to generate sputtered particles; under the action of the electric field and the magnetic field generated by the external magnet, the motion track of the secondary electrons is similar to a cycloid, and the secondary electrons continuously collide with argon atoms in the process of moving along the track of the secondary electrons to ionize to obtain new argon ions and new secondary electrons; neutral target atoms or molecules in sputtering particles generated by bombarding the target with argon ions migrate to the surface of the silicon wafer and are condensed on the surface of the silicon wafer in a deposition mode to form a film, and the film has basically the same components as the target; and the tail gas or other impurities generated when the target material is bombarded by the argon ions can be pumped away by the vacuum pump.

However, in the above process, since the relative positions of the target and the magnet are relatively fixed, the magnetic field generated by the magnet cannot be uniformly distributed on the whole sputtering surface of the target, so that the movement track of the secondary electrons is influenced, the number of times of collision between the secondary electrons and argon atoms is reduced, and the generated number of argon ions is relatively small, and meanwhile, sufficient argon ions are not available to bombard the sputtering surface of the target, so that the sputtering utilization rate of the target is relatively low and the sputtering uniformity is poor.

SUMMERY OF THE UTILITY MODEL

In view of the above-mentioned prior art's defect, the utility model provides a semiconductor device to solve among the prior art because the position relatively fixed of target and magnet, thereby lead to the utilization ratio of target lower relatively and sputter the relatively poor technical problem of homogeneity, improve the homogeneity of coating film.

To achieve the above and other objects, the present invention provides a semiconductor device, including:

a growth chamber;

a susceptor disposed within the growth chamber, the susceptor allowing a substrate to be disposed;

the target is arranged in the growth cavity;

magnets arranged at opposite positions of the target;

the magnet is connected with a driving mechanism, the driving mechanism drives the magnet to move or rotate, and the distance between the magnet and the target material is allowed to be adjusted.

In one embodiment, the driving mechanism comprises a first motor, a second motor, a transmission rod and a lifting assembly, wherein the first motor is connected with the second motor through the transmission rod.

In one embodiment, the lift assembly includes an inner shaft disposed within an outer shaft, one end of the inner shaft extending into the growth cavity.

In an embodiment, an output shaft of the second electric machine is arranged within the outer shaft, the output shaft of the second electric machine being connected to the inner shaft.

In one embodiment, the first motor drives the inner shaft to move along the outer shaft through the transmission rod and the second motor.

In one embodiment, the second motor rotates the inner shaft.

In one embodiment, the magnet is disposed at one end of the inner shaft.

In one embodiment, the inner shaft drives the magnet to rotate in a semicircular or full circle.

In one embodiment, the outer shaft is connected to the growth chamber by sealing means.

In one embodiment, the base allows for attachment of a swivel unit.

To sum up, the utility model provides a semiconductor device, drive the second motor through first motor and make up-and-down motion, the interior shaft of second motor drive makes rotary motion simultaneously, thereby realize interior shaft and can make up-and-down motion and rotary motion simultaneously, improve the relative position of magnet and target, can make the produced magnetic field of magnet scan each position of target in a certain time, the motion trail of adjustment secondary electron is in order to increase secondary electron and argon atom collision number of times, and then make the argon atom can fully ionize in order to produce more argon ions, thereby the sputtering utilization ratio and the sputtering homogeneity of argon ion at the target of bombardment target in-process have been improved, thereby the homogeneity of coating film has been improved.

Drawings

FIG. 1: the present embodiment provides a schematic diagram of a semiconductor device.

FIG. 2: another schematic diagram of a semiconductor device is provided in this embodiment.

FIG. 3: another schematic diagram of a semiconductor device is provided in this embodiment.

Detailed Description

The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the invention in a schematic manner, and only the components related to the invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.

The following description sets forth numerous specific details, such as process chamber configurations and material systems, in order to provide a thorough understanding of embodiments of the present invention. It will be apparent to one skilled in the art that embodiments of the present invention may be practiced without these specific details. In other instances, well-known features, such as specific diode configurations, are not described in detail so as not to obscure embodiments of the invention. In addition, it should be understood that the various embodiments shown in the figures are illustrative and not necessarily drawn to scale. Moreover, other arrangements and configurations may not be explicitly disclosed in the embodiments herein, but are nevertheless considered to be within the spirit and scope of the invention.

Referring to fig. 1, the present embodiment provides a semiconductor apparatus 100, the semiconductor apparatus 100 includes a growth chamber 110, a base 111, a target 123 and a magnet 122.

Referring to FIG. 1, in the present embodiment, a susceptor 111 is disposed within a growth chamber 110, the susceptor 111 may be disposed at a bottom end of the growth chamber 110, allowing a plurality of substrates 112, such as four or six or more or less substrates 112, to be disposed on the susceptor 111, in the present embodiment, the substrates 112 may be disposed on a front surface of the susceptor 111. in some embodiments, the diameter of the susceptor 111 may range, for example, from 200mm to 800mm, such as at 400 mm to 600 mm. the susceptor 111 may be formed of a variety of materials, including silicon carbide or graphite coated with silicon carbide. in some embodiments, the susceptor 111 includes silicon carbide material and has a surface area of 2000 square centimeters or more, such as 5000 square centimeters or more, such as 6000 square centimeters or more. in the present embodiment, the substrate 112 may include sapphire, silicon carbide, silicon, gallium nitride, diamond, lithium aluminate, zinc oxide, tungsten, copper and/or gallium nitride, the substrate 112 may also be, for example, soda-lime glass and/or high silica glass substrates 112, the substrate 112 may be composed of various compositions and may generally have a lattice coefficient of thermal expansion and may be set to a desired value such as a desired drive temperature for increasing or increasing the susceptor 111 may be used in a magnetron sputtering process, such as a drive unit for increasing the susceptor 111, or increasing the substrate growth process, or increasing the substrate may be used in a drive unit for increasing the substrate growth process, such as a drive unit, such as a drive unit, or a drive unit, which may be used for increasing the substrate 111 may be used for increasing the substrate growth process for increasing the substrate 111 may be used for increasing the substrate thickness of a drive unit, or increasing the substrate growth process, or increasing the substrate thickness of a drive unit for example, such as a substrate growth process, such as a drive unit, or a drive unit for example, such as a drive unit for example, or a drive unit for example, which may be used for increasing the drive unit for increasing the substrate thickness of a drive unit for example, which may be used for increasing the drive unit for increasing the substrate thickness of a substrate growth process for increasing the substrate growth process, such as a drive unit for increasing the substrate 111, or increasing the substrate thickness of a drive unit for increasing the substrate thickness of a drive unit of a substrate thickness of a substrate growth process, which may be used for example, such as a substrate.

It is worth noting that in some embodiments, the semiconductor apparatus 100 may also include, for example, a load lock chamber, a load lock cassette, and optionally additional MOCVD reaction chambers (not shown) for a number of applications.

In some embodiments, the substrate is selected from the group consisting of, but not limited to, sapphire, SiC, Si, diamond, L iAlO₂ZnO, W, Cu, GaN, AlGaN, AlN, soda lime/high silica glass, substrates with matched lattice constants and coefficients of thermal expansion, substrates compatible with or treated in accordance with the nitride material grown on the substrate, substrates treated in accordance with the nitride material grown on the substrate, in the desired nitrogenThermally and chemically stable substrates and unpatterned or patterned substrates at the growth temperature of the compounds. In some embodiments, the target material is selected from the group consisting of, but not limited to, Al-containing metals, alloys, and compounds, such as Al, AlN, algal, Al₂O₃And the target may be doped with group II/IV/VI elements to improve layer compatibility and device performance. In one embodiment, the sputtering process gas may include, but is not limited to, for example, N₂、NH₃、NO₂Nitrogen-containing gas such as NO, and inert gas such as Ar, Ne, Kr, etc.

In some embodiments, the semiconductor devices of the present embodiments may relate to devices and methods for forming high quality buffer layers and III-V layers that may be used to form possible semiconductor components, such as radio frequency components, power components, or other possible components.

Referring to fig. 1, in the present embodiment, the target 123 is disposed on the top of the growth chamber 110, the target 123 is electrically connected to a sputtering power source (not shown), and during the magnetron sputtering process, the sputtering power source outputs sputtering power to the target 123, so that the plasma formed in the growth chamber 110 etches the target 123, and the sputtering power source may include a dc power source, an intermediate frequency power source, or a radio frequency power source. The target 123 has at least one surface portion composed of a material to be sputter deposited on the substrate 112 disposed on the susceptor 111. In some embodiments, when forming a buffer layer of, for example, AlN, the AlN-containing buffer layer may be formed using a substantially pure aluminum target that is sputtered using a plasma including an inert gas (e.g., argon) and a nitrogen-containing gas. In some embodiments, after loading one or more substrates 112 in preparation for epitaxy into the growth chamber 110, a continuous AlN film is deposited on the substrates 112 by using an aluminum-containing target and a nitrogen-containing process gas. In some embodiments, the target 123 may be formed from a material selected from, but not limited to, the group of: substantially pure aluminum, aluminum-containing alloys, aluminum-containing compounds (e.g. AlN, AlGaN, Al)₂O₃) And aluminum-containing targets doped with group II/IV/VI elements to improve layer compatibility and device performance. Treatment used during sputtering processThe gas may include, but is not limited to, nitrogen-containing gases such as nitrogen (N) and inert gases₂) Ammonia (NH)₃) Nitrogen dioxide (NO)₂) Nitrogen Oxide (NO), etc., inert gases such as argon (Ar), neon (Ne), krypton (Kr), etc. In some embodiments, dopant atoms can be added to the deposited thin film by doping the target material and/or delivering a dopant gas to the generated sputtering plasma to adjust the electrical, mechanical, and optical properties of the deposited PVDAlN buffer layer, e.g., to make the thin film suitable for fabricating group III nitride devices thereon. In some embodiments, the thin film (AlN buffer layer) formed within the growth chamber 110 is between 0.1-1000 nanometers thick.

Referring to fig. 1, in the present embodiment, the magnet 122 is located above the target 123, and the magnet 122 rotates around the central axis of the target 123, for example, the magnet 122 rotates around the central axis of the target 123 by 90 °, 180 °, or 360 °, or the magnet 122 may rotate around the central axis of the target 123 by any angle. In this embodiment, the magnet 122 is connected to a driving mechanism, and the driving mechanism drives the magnet 122 to rotate and simultaneously reciprocate up and down. The driving mechanism includes a first motor 114, a transmission rod 115, a second motor 116 and a lifting assembly. The first motor 114 is connected to the second motor 116 through a transmission rod 115, the first motor 114 is, for example, a servo motor or a stepping motor, the transmission rod 115 is, for example, a lead screw, and the second motor 116 is, for example, a rotary servo motor, so that the first motor 114 can drive the second motor 116 to reciprocate up and down through the transmission rod 115, and the first motor 114 drives the transmission rod 115 to rotate forward or backward to enable the second motor 116 to reciprocate. In this embodiment, the lifting assembly comprises an outer shaft 118 and an inner shaft 119, the inner shaft 119 being arranged inside the outer shaft 118, the inner shaft 119 being allowed to move along the outer shaft 118, while the outer shaft 118 is arranged on the growth chamber 110, a part of the inner shaft 119 being arranged inside the growth chamber 110, a fixing means 121 being arranged at one end of the inner shaft 119, by means of which fixing means 121 the magnet 122 is fixed at one end of the inner shaft 119, and a sealing means 120 being arranged around the outer shaft 118 in contact with the growth chamber 110, by means of which sealing means 120 a vacuum seal is achieved, the sealing means 120 being for example a sealing ring. In this embodiment, the second motor 116 is connected to the inner shaft 119 through an output shaft 117, the output shaft 117 is partially located in the outer shaft 118, the second motor 116 can drive the inner shaft 119 to rotate through the output shaft 117, and the first motor 114 drives the second motor 116 to reciprocate up and down through the transmission rod 115, so that when the first motor 114 and the second motor 116 are simultaneously turned on, the inner shaft 119 can reciprocate up and down and also rotate, thereby driving the magnet 122 on the inner shaft 119 to move correspondingly. The inner shaft 119 may only reciprocate up and down when the first motor 114 is turned on and the second motor 116 is turned off. The inner shaft 119 may only perform rotational movement when the first motor 114 is turned off and the second motor 116 is turned on. Whereby the operator may choose to turn the first motor 114 and/or the second motor 116 on and/or off depending on the implementation.

Referring to fig. 1, in the present embodiment, the magnet 122 may have an arc shape, for example, so that when the magnet 122 rotates around the central axis of the target 123, a uniform magnetic field is formed. The uniform magnetic field is uniformly scanned to each position of the target 123 to ionize more argon ions near the sputtering surface of the target 123, so that the argon ions can uniformly sputter each position of the entire surface of the target 123, the utilization rate of the target 123 and the uniformity during sputtering are improved, and the quality of a deposited film is improved. Meanwhile, the magnet 122 reciprocates up and down, so that the distance between the magnet 122 and the target 123 is further adjusted, the target 123 can be uniformly corroded, the utilization rate of the target 123 is improved, and the quality and the uniformity of a deposited film are further improved.

In some implementations, the target 123 may remain stationary while the magnet 122 is in rotational motion, or may rotate about its central axis, but there is a speed difference between the target 123 and the magnet 122. When the magnet 122 rotates, the target 123 may be driven to rotate around its central axis by a power source such as a motor, so that there is a speed difference between the target 123 and the magnet 122. The relative motion of the target 123 and the magnet 122 can make the magnetic field generated by the magnet 122 uniformly scan the sputtering surface of the target 123, and because the electric field and the magnetic field uniformly distributed on the sputtering surface of the target 123 act on the secondary electrons simultaneously in the embodiment, the motion trajectory of the secondary electrons can be adjusted to increase the number of times of collision between the secondary electrons and the argon atoms, so that the argon atoms near the sputtering surface of the target 123 are sufficiently ionized to generate more argon ions; and more argon ions bombard the target 123, so that the sputtering utilization rate and sputtering uniformity of the target 123 can be effectively improved, and the quality and uniformity of the deposited film are further improved.

Referring to fig. 1, in some embodiments, the semiconductor apparatus 100 further comprises at least one gas inlet disposed on a sidewall of the growth chamber 110, the gas inlet being connected to an external gas source 124, the semiconductor apparatus 100 further comprises at least one pumping port disposed on a bottom of the growth chamber 110, the pumping port being connected to a vacuum pump 125. The process gas used during the sputtering process may include, but is not limited to, nitrogen-containing gases such as nitrogen (N) and inert gases₂) Ammonia gas (NH)₃) Nitrogen dioxide (NO)₂) And Nitrogen Oxide (NO), inert gases such as argon (Ar), neon (Ne), krypton (Kr), etc., which may be delivered into the growth chamber 110 by an external gas source 124. Vacuum pump 125 evacuates the chamber so that growth chamber 110 is in a vacuum state.

Referring to fig. 2, in some embodiments, the magnet 122 of the semiconductor device 200 may be further disposed on a fixing plate 222, the fixing plate 222 is connected to a driving unit 220 through a connecting rod 221, and the driving unit 220 may be, for example, a servo motor or a rotary servo motor, so that the magnet 122 may be raised or lowered or the magnet 122 may rotate around the connecting rod 221. Thereby adjusting the distance between the magnet 122 and the target. When the magnet 122 rotates, a uniform circular magnetic field is formed, which can further improve the utilization rate of the target material and the sputtering uniformity, thereby improving the uniformity of the coating. In some embodiments, the magnet 122 may be asymmetrically disposed on the fixing plate 222, with both the magnet 122 and the fixing plate 222 being located within the growth chamber 110.

Referring to fig. 3, another semiconductor device 10 is provided in the present embodiment, in which the semiconductor device 10 includes a cleaning chamber 11, a transporting chamber 12, a preheating chamber 13, a growing chamber 110, a cooling chamber 15, and a product chamber 16. Wherein, the cleaning cavity 11, the preheating cavity 13, the growing cavity 110 and the cooling cavity 15 are all connected with the conveying cavity 12, and the finished product cavity 16 is connected with the cooling cavity 15. When the semiconductor apparatus 10 is operated, the robot arm in the transfer chamber transfers the substrate into the cleaning chamber 11, and the plasma is generated near the surface of the substrate by applying a bias voltage to the electrode of the cleaning chamber 11 in the cleaning chamber 11. The plasma generated typically contains radicals and ions formed from a gas mixture including argon, nitrogen, hydrogen, and/or other gases. The generated gas ions and radicals interact with and/or bombard the substrate surface to remove any substrate surface contamination and particles. In some cases, plasma is used to modify the surface structure of the substrate to ensure better crystallographic alignment between the substrate and the deposited epitaxial thin film layer (e.g., an AlN-containing buffer layer). The plasma density, bias voltage, and processing time can be adjusted to efficiently process the substrate surface without damaging the substrate surface. After the substrate cleaning step is completed, the robot in the transport chamber 12 transports the substrate into the preheating chamber 13, the substrate may be degassed before entering the preheating chamber 13 to remove any harmful adsorbed water or other volatile contaminants from the surface of the substrate, and after the substrate is heated to a certain temperature by the preheating chamber 13, the robot in the transport chamber 12 transports the substrate into the growth chamber 110 to form a semiconductor layer on the surface of the substrate. After the substrate is coated, the robot arm in the transport chamber 12 transports the substrate to the cooling chamber 15 for cooling, and after the substrate is cooled to a certain temperature, the substrate is transported to the product chamber 16 for storage. It should be noted that the cleaning chamber 11, the preheating chamber 13, the growth chamber 110, the cooling chamber 15 and the product chamber 16 are always kept in a vacuum state. The semiconductor device of this embodiment may, for example, have one or more aluminum nitride buffer layers formed on the substrate with an atomically smooth surface having a roughness of less than 1 nanometer and a desirable (002) direction of crystallographic orientation.

In some embodiments, appropriate control of the multi-chamber processing platform may be provided by a controller. The controller may be one of any form of general purpose data processing system that can be used in an industrial setting to control various sub-processors and sub-controllers. Typically, the controller includes a Central Processing Unit (CPU) that communicates with memory and input/output (I/O) circuitry among other common elements. As an example, the controller may perform or otherwise initiate one or more of the operations of any of the methods/processes described herein. Any computer program code that performs and/or initiates these operations may be embodied as a computer program product. Each of the computer program products described herein may be executed from a computer readable medium (e.g., a floppy disk, a compact disk, a DVD, a hard drive, a random access memory, etc.).

To sum up, the utility model provides a semiconductor device, through designing a actuating mechanism, this actuating mechanism can be so that the magnet carries out up-and-down motion and rotary motion simultaneously, has effectively improved the sputtering utilization ratio and the sputtering homogeneity of target, has effectively improved the homogeneity of coating film, has improved the quality of product.

The above description is only a preferred embodiment of the present application and the explanation of the applied technical principle, and it should be understood by those skilled in the art that the scope of the present application is not limited to the technical solution of the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept, for example, the technical solutions formed by mutually replacing the above technical features (but not limited to) having similar functions disclosed in the present application.

Besides the technical features described in the specification, other technical features are known to those skilled in the art, and further description of the other technical features is omitted here in order to highlight the innovative features of the present invention.

Claims (10)

1. A semiconductor device, comprising:

a growth chamber;

a susceptor disposed within the growth chamber, the susceptor allowing a substrate to be disposed;

the target is arranged in the growth cavity;

magnets arranged at opposite positions of the target;

the magnet is connected with a driving mechanism, the driving mechanism drives the magnet to move or rotate, and the distance between the magnet and the target material is allowed to be adjusted.

2. The semiconductor device according to claim 1, wherein: the driving mechanism comprises a first motor, a second motor, a transmission rod and a lifting assembly, wherein the first motor is connected with the second motor through the transmission rod.

3. The semiconductor device according to claim 2, wherein: the lifting assembly comprises an inner shaft and an outer shaft, the inner shaft is arranged in the outer shaft, and one end of the inner shaft extends into the growth cavity.

4. The semiconductor device according to claim 3, wherein: the output shaft of the second motor is arranged in the outer shaft, and the output shaft of the second motor is connected with the inner shaft.

5. The semiconductor device according to claim 3, wherein: the first motor drives the inner shaft to move along the outer shaft through the transmission rod and the second motor.

6. The semiconductor device according to claim 5, wherein: the second motor drives the inner shaft to rotate.

7. The semiconductor device according to claim 6, wherein: the magnet is disposed at one end of the inner shaft.

8. The semiconductor device according to claim 7, wherein: the inner shaft drives the magnet to rotate in a semicircle or a full circle.

9. The semiconductor device according to claim 3, wherein: the outer shaft is connected to the growth cavity through a sealing device.

10. The semiconductor device according to claim 1, wherein: the base allows a rotation unit to be attached.

Images