CN211180079U - Discrete component comprehensive parameter tester - Google Patents
Discrete component comprehensive parameter tester Download PDFInfo
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- CN211180079U CN211180079U CN201920932327.0U CN201920932327U CN211180079U CN 211180079 U CN211180079 U CN 211180079U CN 201920932327 U CN201920932327 U CN 201920932327U CN 211180079 U CN211180079 U CN 211180079U
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Abstract
The utility model discloses a discrete component comprehensive parameter tester, which comprises a singlechip, an alternating current average value measuring circuit, a temperature sensor, a clock module, an inductance measuring circuit, a resistance measuring circuit, a capacitance measuring circuit, a liquid crystal display screen, a frequency meter and a power module, wherein the alternating current average value measuring circuit, the temperature sensor, the clock module, the inductance measuring circuit, the resistance measuring circuit, the capacitance measuring circuit, the liquid crystal display screen and the power module are all connected with the singlechip; the power supply module comprises a voltage input end, first to third resistors, a first triode, a second triode, a first capacitor, a fourth potentiometer, a first diode, a third triode, a fourth triode, a fifth resistor, a sixth resistor, a seventh resistor, a fifth triode, an eighth resistor, a time base chip, a ninth resistor, a second capacitor, a tenth resistor and a voltage output end. The utility model discloses circuit structure is comparatively simple, the cost is lower, the security and the reliability of convenient maintenance, circuit are higher.
Description
Technical Field
The utility model relates to a parameter tester field, in particular to discrete component comprehensive parameter tester.
Background
The discrete component comprehensive parameter tester can test parameters of discrete devices of various types of semiconductors (high power and low power), can conveniently obtain the parameters of various discrete devices, judges the performance of the devices, has the functions of liquid crystal display, printout, overcurrent protection and the like, can conveniently observe various test data, prints and outputs the test data according to requirements, and is simple to operate due to the good human-computer interface design. The discrete component comprehensive parameter tester also has the following characteristics: (1) arrays, combinations, surface-mounted devices of large, medium, and small power discrete semiconductor devices of each of the above-listed classes can be tested. (2) The testing method conforms to the national industry general standard, the corresponding national standard and the national military device testing standard. (3) The test fixture and the test adapter with different packaging forms for testing various devices are provided. (4) The test fixture for various array, combined package and surface-mounted devices can be customized. (5) Help users develop test programs for various devices.
Fig. 1 is a schematic circuit diagram of a power supply portion of a conventional parameter tester, and it can be seen from fig. 1 that the power supply portion of the conventional parameter tester uses many components and parts, has a complex circuit structure and high hardware cost, and is inconvenient to maintain. In addition, the power supply part of the traditional parameter tester lacks corresponding circuit protection functions, such as: the safety and reliability of the circuit are poor due to the lack of the current-limiting protection function.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in, to the above-mentioned defect of prior art, provide a circuit structure comparatively simple, the cost is lower, convenient maintenance, the security of circuit and the higher discrete component comprehensive parameter tester of reliability.
The utility model provides a technical scheme that its technical problem adopted is: the tester for the comprehensive parameters of the discrete elements comprises a single chip microcomputer, an alternating current average value measuring circuit, a temperature sensor, a clock module, an inductance measuring circuit, a resistance measuring circuit, a capacitance measuring circuit, a liquid crystal display screen, a frequency meter and a power module, wherein the alternating current average value measuring circuit, the temperature sensor, the clock module, the inductance measuring circuit, the resistance measuring circuit, the capacitance measuring circuit, the liquid crystal display screen and the power module are all connected with the single chip microcomputer, and the frequency meter is connected with the power module;
the power module comprises a voltage input end, a first resistor, a second resistor, a first triode, a second triode, a third resistor, a first capacitor, a fourth potentiometer, a first diode, a third triode, a fourth triode, a fifth resistor, a sixth resistor, a seventh resistor, a fifth triode, an eighth resistor, a time base chip, a ninth resistor, a second capacitor, a tenth resistor and a voltage output end, wherein one end of the voltage input end is respectively connected with a collector of the first triode, one end of the third resistor, one end of the first capacitor, a fixed end of the fourth potentiometer and an anode of the first diode, the other end of the third resistor is connected with a collector of the second triode, a base of the first triode is respectively connected with one end of the first resistor, one end of the second resistor and the other end of the voltage input end, an emitter of the first triode is respectively connected with the other end of the first resistor and an emitter of the second triode A base electrode of the second triode is connected with the other end of the second resistor, the other end of the first capacitor, the other fixed end of the fourth potentiometer, an emitting electrode of the third triode, one end of a sixth resistor and one end of a seventh resistor respectively, a base electrode of the third triode is connected with a sliding end of the fourth potentiometer, a collector electrode of the third triode is connected with one end of the fifth resistor, the other end of the fifth resistor is connected with a collector electrode of the fifth triode and a discharge end of the time base chip respectively, a base electrode of the fifth triode is connected with the other end of the sixth resistor, a collector electrode of the fourth triode is connected with a cathode of the first diode, a base electrode of the fourth triode is connected with a trigger end of the time base chip through the eighth resistor, and an emitting electrode of the fourth triode is connected with a zero clearing end, a zero clearing end and a zero clearing end of the time base chip respectively, The power end is connected with one end of the voltage output end, the negative end of the time-base chip is connected with one end of the ninth resistor, the voltage control end of the time-base chip is connected with one end of the second capacitor, the output end of the time-base chip is connected with one end of the tenth resistor, and the emitting electrode of the fifth triode is respectively connected with the other end of the seventh resistor, the other end of the ninth resistor, the other end of the second capacitor, the other end of the tenth resistor and the other end of the voltage output end.
In the discrete component integrated parameter tester of the present invention, the first diode is L-1822.
Discrete component integrated parameter tester in, power module still includes eleventh resistance, the one end of eleventh resistance with the slip end of fourth potentiometre is connected, the other end of eleventh resistance with the base of third triode is connected.
In the discrete component integrated parameter tester of the present invention, the resistance of the eleventh resistor is 38k Ω.
In the discrete component integrated parameter tester of the present invention, the first transistor is an NPN transistor.
In the discrete component integrated parameter tester of the present invention, the second triode is an NPN-type triode.
In the discrete component integrated parameter tester of the present invention, the third transistor is an NPN transistor.
In the discrete component integrated parameter tester of the present invention, the fourth transistor is an NPN transistor.
In the discrete component integrated parameter tester of the present invention, the fifth transistor is an NPN transistor.
Implement the utility model discloses a discrete component comprehensive parameter tester has following beneficial effect: the device is provided with a singlechip, an alternating current average value measuring circuit, a temperature sensor, a clock module, an inductance measuring circuit, a resistance measuring circuit, a capacitance measuring circuit, a liquid crystal display screen, a frequency meter and a power supply module; the power module comprises a voltage input end, a first resistor, a second resistor, a first triode, a second triode, a third resistor, a first capacitor, a fourth potentiometer, a first diode, a third triode, a fourth triode, a fifth resistor, a sixth resistor, a seventh resistor, a fifth triode, an eighth resistor, a time base chip, a ninth resistor, a second capacitor, a tenth resistor and a voltage output end.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic circuit diagram of the power supply portion of a conventional parametric tester;
FIG. 2 is a schematic structural diagram of an embodiment of the integrated parameter tester for discrete components of the present invention;
fig. 3 is a schematic circuit diagram of the power supply module in the embodiment.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the embodiment of the integrated parameter tester for discrete components of the present invention, the schematic structural diagram of the integrated parameter tester for discrete components is shown in fig. 2. In fig. 2, the discrete component comprehensive parameter tester includes a single chip microcomputer 1, an alternating current average value measuring circuit 2, a temperature sensor 3, a clock module 4, an inductance measuring circuit 5, a resistance measuring circuit 6, a capacitance measuring circuit 7, a liquid crystal display 8, a frequency meter 9 and a power module 10, wherein the alternating current average value measuring circuit 2, the temperature sensor 3, the clock module 4, the inductance measuring circuit 5, the resistance measuring circuit 6, the capacitance measuring circuit 7, the liquid crystal display 8 and the power module 10 are all connected with the single chip microcomputer 1, and the frequency meter 9 is connected with the power module 10.
The alternating current average value measuring circuit 2 is used for measuring the average value of alternating current signals, the temperature sensor 3 can measure the internal temperature of the discrete component comprehensive parameter tester, and when the temperature is too high, the fan can be started to cool so as to prevent the damage of the tester caused by the too high internal temperature. The clock module 4 realizes accurate timing of year, month, day, hour, minute and second. The inductance measuring circuit 5 is used for measuring the size of the inductance. The resistance measuring circuit 6 is used for measuring the magnitude of the resistance. The capacitance measuring circuit 7 is used for measuring the size of the capacitance.
The utility model discloses regard as control core with singlechip 1, can the parameter value of accurate measurement resistance, electric capacity and inductance, can also measure the frequency size and the average value of external signal simultaneously. In a standby state, the current time and the real-time temperature inside the discrete component comprehensive parameter tester can be displayed through the liquid crystal display screen 8.
The single chip microcomputer 1 receives corresponding electrical parameter information from the alternating current average value measuring circuit 2, the temperature sensor 3, the clock module 4, the inductance measuring circuit 5, the resistance measuring circuit 6 and the capacitance measuring circuit 7, and the electrical parameter information is converted by the single chip microcomputer 1 and then sent to the liquid crystal display screen 8 to be displayed.
In this embodiment, the single chip microcomputer 1, the alternating current average value measuring circuit 2, the temperature sensor 3, the clock module 4, the inductance measuring circuit 5, the resistance measuring circuit 6, the capacitance measuring circuit 7, the liquid crystal display screen 8 and the frequency meter 9 are all implemented by adopting a structure in the prior art, and the working principle of the single chip microcomputer is also the working principle in the prior art, which is not described in detail herein.
Fig. 3 is a schematic circuit diagram of a power module in this embodiment, in fig. 3, the power module 10 includes a voltage input terminal Vin, a first resistor R1, a second resistor R2, a first transistor Q1, a second transistor Q2, a third resistor R3, a first capacitor C1, a fourth potentiometer RP4, a first diode D1, a third transistor Q3, a fourth transistor Q4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a fifth transistor Q9, an eighth resistor R8, a time-base chip U1, a ninth resistor R9, a second capacitor C2, a tenth resistor R10, and a voltage output terminal Vo, wherein one end of the voltage input terminal Vin is respectively connected to a collector of the first transistor Q1, one end of the third resistor R3, one end of the first capacitor C1, one fixed end of the fourth potentiometer RP 72, and an anode of the first diode RP 1D 1, and the other end of the first resistor R1 is connected to the collector of the first transistor Q1, the base of a first triode Q1 is respectively connected with one end of a first resistor R1, one end of a second resistor R2 and the other end of a voltage input end Vin, the emitter of a first triode Q1 is respectively connected with the other end of a first resistor R1 and the emitter of a second triode Q2, the base of a second triode Q2 is respectively connected with the other end of a second resistor R2, the other end of a first capacitor C1, the other fixed end of a fourth potentiometer RP4, the emitter of a third triode Q3, one end of a sixth resistor R6 and one end of a seventh resistor R7, the base of a third triode Q3 is connected with the sliding end of a fourth potentiometer RP4, the collector of a third triode Q3 is connected with one end of a fifth resistor R5, the other end of a fifth resistor R5 is respectively connected with the collector of a fifth triode Q3 and the discharging end of a time-base chip U1, the base of a fifth triode Q5 is connected with the other end of a sixth resistor R6, the collector of the fourth triode Q4 is connected with the cathode of the first diode D1, the base of the fourth triode Q4 is connected with the trigger end of the time-base chip U1 through the eighth resistor R8, the emitter of the fourth triode Q4 is connected with the zero clearing end, the power end and one end of the voltage output end Vo of the time-base chip U1 respectively, the negative end of the time-base chip U1 is connected with one end of the ninth resistor R9, the voltage control end of the time-base chip U1 is connected with one end of the second capacitor C2, the output end of the time-base chip U1 is connected with one end of the tenth resistor R10, and the emitter of the fifth triode Q5 is connected with the other end of the seventh resistor R7, the other end of the ninth resistor R9, the other end of the second capacitor C2, the other end of the tenth resistor R10 and the other end of the voltage output.
Compared with the power supply part of the traditional parameter tester in fig. 1, the power supply module 10 has the advantages of fewer used components, simpler circuit structure and convenience in maintenance, and can reduce the hardware cost due to the fact that some components are saved. In addition, the first diode D1 is a current limiting diode for current limiting protection of the collector current of the fourth transistor Q4. The current limiting protection principle is as follows: when the collector current of the fourth triode Q4 is large, the first diode D1 can reduce the collector current of the fourth triode Q4 to keep the collector current in a normal working state, so that the situation that components in the circuit are burnt out due to too large current is avoided, the safety and reliability of the circuit are high, and the technical effect better than that of the traditional technology is achieved by fewer components.
It should be noted that in the embodiment, the first diode D1 has a model number of L-1822, however, in practical applications, the first diode D1 may also be another type of diode with similar functions.
In this embodiment, the first transistor Q1, the second transistor Q2, the third transistor Q3, the fourth transistor Q4, and the fifth transistor Q5 are all NPN transistors. Certainly, in practical applications, the first transistor Q1, the second transistor Q2, the third transistor Q3, the fourth transistor Q4, and the fifth transistor Q5 may also be PNP transistors, but the structure of the circuit may also be changed accordingly.
Since the first transistor Q1 and the second transistor Q2 form a pair-transistor structure, according to the characteristics of the pair-transistor structure, the collector voltage of the first transistor Q1 is equal to the collector voltage of the second transistor Q2, and the collector voltage of the first transistor Q1 is provided by the power supply, so the collector voltage of the second transistor Q2 will be at a stable value; when the three-transistor switch normally works, the third triode Q3 and the fifth triode Q5 are both cut off, the time base chip U1 is reset, the discharge transistor in the time base chip U1 is turned on, the discharge transistor draws current from the base electrode of the fourth triode Q4, the fourth triode Q4 is saturated, and the voltage is directly sent to a main load; when the current drawn by the load exceeds a specified value, the voltage drop of the seventh resistor R7 is increased, the fifth triode Q5 is enabled to be conducted, the time base chip U1 is triggered, the internal discharge transistor is cut off, then the fourth triode Q4 is also cut off, the stable voltage is isolated from the load, the time base chip U1 is in a monostable state, the monostable state is reached, the time base chip U1 is triggered again as long as the load overcurrent phenomenon is not eliminated, and the fourth triode Q4 continues to isolate the load, so that the load current is stable.
In this embodiment, the power module 10 further includes an eleventh resistor R11, one end of the eleventh resistor R11 is connected to the sliding end of the fourth potentiometer RP4, and the other end of the eleventh resistor R11 is connected to one end of the base of the third transistor Q3. The eleventh resistor R11 is a current limiting resistor, and is used for current limiting protection of the base current of the third transistor Q3. The current limiting protection principle is as follows: when the base current of the third triode Q3 is large, the eleventh resistor R11 can reduce the base current of the third triode Q3 to keep the base current in a normal working state, so that the elements in the circuit are not burnt out due to too large current, and the safety and reliability of the circuit are further enhanced.
It should be noted that, in the present embodiment, the resistance of the eleventh resistor R11 is 38k Ω. Of course, in practical applications, the resistance of the eleventh resistor R11 may be adjusted according to specific situations, that is, the resistance of the eleventh resistor R11 may be increased or decreased according to specific situations.
In a word, in this embodiment, compared with the power supply part of the conventional parameter tester, the power supply module 10 uses fewer components, has a simpler circuit structure, is convenient to maintain, and can reduce the hardware cost due to the fact that some components are saved. In addition, since the power module 10 is provided with a current-limiting diode, the safety and reliability of the circuit are high.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A discrete component comprehensive parameter tester is characterized by comprising a single chip microcomputer, an alternating current average value measuring circuit, a temperature sensor, a clock module, an inductance measuring circuit, a resistance measuring circuit, a capacitance measuring circuit, a liquid crystal display screen, a frequency meter and a power module, wherein the alternating current average value measuring circuit, the temperature sensor, the clock module, the inductance measuring circuit, the resistance measuring circuit, the capacitance measuring circuit, the liquid crystal display screen and the power module are all connected with the single chip microcomputer, and the frequency meter is connected with the power module;
the power module comprises a voltage input end, a first resistor, a second resistor, a first triode, a second triode, a third resistor, a first capacitor, a fourth potentiometer, a first diode, a third triode, a fourth triode, a fifth resistor, a sixth resistor, a seventh resistor, a fifth triode, an eighth resistor, a time base chip, a ninth resistor, a second capacitor, a tenth resistor and a voltage output end, wherein one end of the voltage input end is respectively connected with a collector of the first triode, one end of the third resistor, one end of the first capacitor, a fixed end of the fourth potentiometer and an anode of the first diode, the other end of the third resistor is connected with a collector of the second triode, a base of the first triode is respectively connected with one end of the first resistor, one end of the second resistor and the other end of the voltage input end, an emitter of the first triode is respectively connected with the other end of the first resistor and an emitter of the second triode A base electrode of the second triode is connected with the other end of the second resistor, the other end of the first capacitor, the other fixed end of the fourth potentiometer, an emitting electrode of the third triode, one end of a sixth resistor and one end of a seventh resistor respectively, a base electrode of the third triode is connected with a sliding end of the fourth potentiometer, a collector electrode of the third triode is connected with one end of the fifth resistor, the other end of the fifth resistor is connected with a collector electrode of the fifth triode and a discharge end of the time base chip respectively, a base electrode of the fifth triode is connected with the other end of the sixth resistor, a collector electrode of the fourth triode is connected with a cathode of the first diode, a base electrode of the fourth triode is connected with a trigger end of the time base chip through the eighth resistor, and an emitting electrode of the fourth triode is connected with a zero clearing end, a zero clearing end and a zero clearing end of the time base chip respectively, The power end is connected with one end of the voltage output end, the negative end of the time-base chip is connected with one end of the ninth resistor, the voltage control end of the time-base chip is connected with one end of the second capacitor, the output end of the time-base chip is connected with one end of the tenth resistor, and the emitting electrode of the fifth triode is respectively connected with the other end of the seventh resistor, the other end of the ninth resistor, the other end of the second capacitor, the other end of the tenth resistor and the other end of the voltage output end.
2. The discrete component integrated parameter tester of claim 1 wherein the first diode is model number L-1822.
3. The discrete component integrated parameter tester of claim 2, wherein the power module further comprises an eleventh resistor, one end of the eleventh resistor is connected to the sliding end of the fourth potentiometer, and the other end of the eleventh resistor is connected to the base of the third transistor.
4. The discrete component integrated parameter tester of claim 3 wherein the eleventh resistor has a resistance of 38k Ω.
5. The discrete component integrated parameter tester of any of claims 1 to 4, wherein the first transistor is an NPN transistor.
6. The discrete component integrated parameter tester of any of claims 1 to 4, wherein the second transistor is an NPN transistor.
7. The discrete component integrated parameter tester of any of claims 1 to 4, wherein the third transistor is an NPN transistor.
8. The discrete component integrated parameter tester of any of claims 1 to 4, wherein the fourth transistor is an NPN transistor.
9. The discrete component integrated parameter tester of any of claims 1 to 4, wherein the fifth transistor is an NPN transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920932327.0U CN211180079U (en) | 2019-06-20 | 2019-06-20 | Discrete component comprehensive parameter tester |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920932327.0U CN211180079U (en) | 2019-06-20 | 2019-06-20 | Discrete component comprehensive parameter tester |
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| CN211180079U true CN211180079U (en) | 2020-08-04 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113504447A (en) * | 2021-07-09 | 2021-10-15 | 武汉工程大学 | Semiconductor device parameter testing device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113504447A (en) * | 2021-07-09 | 2021-10-15 | 武汉工程大学 | Semiconductor device parameter testing device |
| CN113504447B (en) * | 2021-07-09 | 2024-05-31 | 武汉工程大学 | Semiconductor device parameter testing device |
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Address after: 510000 room 1501, 95 Yanling Road, Tianhe District, Guangzhou City, Guangdong Province Patentee after: Guangdong Huaneng Electromechanical Group Co.,Ltd. Address before: 510000 room 1501, 95 Yanling Road, Tianhe District, Guangzhou City, Guangdong Province Patentee before: GUANGDONG HUANENG DYNAMO-ELECTRIC CO.,LTD. |
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