CN211150334U

CN211150334U - Novel thin film capacitor structure

Info

Publication number: CN211150334U
Application number: CN201921563251.5U
Authority: CN
Inventors: 杜祥顺
Original assignee: Sina-Newchance New Energy Technology Corp ltd
Current assignee: Sina-Newchance New Energy Technology Corp ltd
Priority date: 2019-09-19
Filing date: 2019-09-19
Publication date: 2020-07-31
Anticipated expiration: 2029-09-19

Abstract

The utility model discloses a novel film capacitor structure, belonging to the capacitor field, comprising a shell, wherein a film medium is arranged in the shell; an input positive busbar and an input negative busbar are arranged on the shell, and one end of the input positive busbar and one end of the input negative busbar both extend into the shell and are connected with the thin film medium; the shell is also provided with an output positive electrode bus bar and an output negative electrode bus bar, one end of the output positive electrode bus bar and one end of the output negative electrode bus bar extend into the shell and are connected with the thin film medium, and the other end of the output positive electrode bus bar and the other end of the output negative electrode bus bar are connected with a stitch structure; the shell is also provided with an alternating current busbar, and one end of the alternating current busbar is connected with a pin structure. The utility model has the advantages of simple structure and reasonable design, can be quick, the efficient connects the IGBT, carries out electric capacity and IGBT's combination.

Description

Novel thin film capacitor structure

Technical Field

The utility model relates to a condenser field, in particular to novel film capacitor structure.

Background

The most central component in the new energy industry of automobiles is an automobile power system (electric drive system assembly), and a core control unit of the electric drive system assembly is a motor controller which is the heart of the electric drive system. The performance of the power module in the motor controller directly affects whether the power module can work normally. At present, the national subsidy of the new energy industry of automobiles is close to the end sound, and the price reduction pressure of the whole automobile factory on parts is increasingly greater. However, the price of the flyer module commonly used in the industry is continuously increased under the environment, and the price increase of the flyer module is nearly doubled to the current position. While the cost of the power module has reached 50% or even more of the overall controller. Therefore, the search for a low-cost high-performance power module becomes an imminent problem in the new energy industry.

The connection mode of the film capacitor and the packaging IGBT which is commonly used at present is that the extending copper bar of the film capacitor is lapped at the connecting terminal of the packaging IBGT and is compressed by a bolt to realize connection.

However, to achieve a reduction in the cost of the power module, IGBTs are typically provided as separate individual modules, with different numbers of IGBTs combined with thin film capacitors depending on the needs of the use. Therefore, the IGBT is not packaged any more, so that the connecting terminal connected with the capacitor does not exist, and the connecting step of the IGBT and the thin film capacitor is complicated and the use is inconvenient during combination.

SUMMERY OF THE UTILITY MODEL

Thin film capacitor and IGBT connected mode to prior art existence loaded down with trivial details, convenient problem inadequately, the utility model aims to provide a novel thin film capacitor structure.

In order to achieve the above purpose, the technical scheme of the utility model is that:

a novel thin film capacitor structure comprises a shell, wherein a thin film medium is arranged in the shell; an input positive busbar and an input negative busbar are arranged on the shell, and one end of the input positive busbar and one end of the input negative busbar both extend into the shell and are connected with the thin film medium; the shell is also provided with an output positive electrode bus bar and an output negative electrode bus bar, one end of the output positive electrode bus bar and one end of the output negative electrode bus bar extend into the shell and are connected with the thin film medium, and the other end of the output positive electrode bus bar and the other end of the output negative electrode bus bar are connected with pin structures; the shell is further provided with an alternating current busbar, and one end of the alternating current busbar is connected with a pin structure.

Preferably, the input positive busbar, the input negative busbar, the output positive busbar and the output negative busbar are all connected with the thin film medium in a welding manner.

Preferably, the input positive busbar and the input negative busbar are both encapsulated on the shell through epoxy resin.

Preferably, the output positive busbar and the output negative busbar are encapsulated on the shell through epoxy resin

Preferably, the alternating-current busbar comprises an a-phase busbar, a B-phase busbar and a C-phase busbar which are distributed in a row.

Preferably, the alternating current busbar, the output positive busbar and the output negative busbar are arranged on the same side face of the shell; the output positive busbar and the output negative busbar are distributed on a straight line parallel to the alternating-current busbar.

By adopting the technical scheme, the output positive electrode bus bar, the output negative electrode bus bar and the pin structure on the alternating current bus bar are arranged, so that when the IGBT and the novel thin film capacitor are combined, the connection between the IGBT and the novel thin film capacitor can be completed through the pin structure, and the operation process is simple, convenient and quick; when the device works, current is input into the thin film medium through the input positive busbar and the input negative busbar, the current is buffered through the thin film medium and then is transmitted to the IGBT through pin structures of the output positive busbar and the output negative busbar, then the current is transmitted to the alternating current busbar through the pin structures by the IGBT, and finally, the continuous and stable current is output.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a front view of a novel thin film capacitor structure;

FIG. 2 is a top view of the novel thin film capacitor structure shown in FIG. 1;

fig. 3 is a partially enlarged view of a portion a in fig. 2.

In the figure, a 1-alternating current bus bar, a 11-A phase bus bar, a 12-B phase bus bar, a 13-C phase bus bar, a 2-input positive electrode bus bar, a 3-input negative electrode bus bar, a 4-output positive electrode bus bar, a 5-output negative electrode bus bar, a 6-shell, a 7-pin structure, an 8-input end and a 9-output end.

Detailed Description

The following further describes embodiments of the present invention with reference to the drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

It should be noted that in the description of the present invention, the terms "upper", "lower", and the like refer to directions or positional relationships for the purpose of illustrating the structure of the present invention based on the drawings, and are only for convenience of describing the present invention, but do not indicate or imply that the referred device or element must have a specific direction, be constructed and operated in a specific direction, and thus, should not be construed as limiting the present invention.

In the technical scheme, the terms "first" and "second" are only used for referring to the same or similar structures or corresponding structures with similar functions, and are not used for ranking the importance of the structures, or comparing the sizes or other meanings. In addition, unless expressly stated or limited otherwise, the terms "mounted" and "connected" are to be construed broadly, e.g., the connection may be a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two structures can be directly connected or indirectly connected through an intermediate medium, and the two structures can be communicated with each other. To those skilled in the art, the specific meanings of the above terms in the present invention can be understood in light of the present general concepts, in connection with the specific context of the scheme.

As shown in fig. 1-3, a novel thin film capacitor structure comprises a housing 6, wherein the housing 6 is made of an insulating material, usually plastic; inside the housing 6 is provided a film medium (not shown), also of plastic, such as polyethylene, polypropylene, polystyrene or polycarbonate.

An input positive busbar 2 and an input negative busbar 3 are arranged on the shell 6, and one end of the input positive busbar 2 and one end of the input negative busbar 3 extend into the shell 6 and are connected with the thin film medium; the other end of the input positive busbar 2 and the other end of the input negative busbar 3 are both positioned outside the shell 6 and form an input end 8, and the input end 8 is used for connecting input current.

An output positive busbar 4 and an output negative busbar 5 are also arranged on the shell 6, and one end of the output positive busbar 4 and one end of the output negative busbar 5 both extend into the shell 6 and are connected with the thin film medium; the other end of the output positive busbar 4 and the other end of the output negative busbar 5 extend out of the shell 6, and the other end of the output positive busbar 4 and the other end of the output negative busbar 5 are connected with pin structures 7.

Still be provided with alternating current on the casing 6 and arrange 1, arrange two ends of 1 and all be located the outside of casing 6 on arranging, be connected with foretell stitch structure 7 on arranging 1's the end of alternating current, arrange 1 another end of alternating current and form output end 9, output end 9 is used for external equipment output current.

Due to the arrangement of the pin structure 7, the IGBT can be conveniently and quickly connected to the output positive busbar 4, the output negative busbar 5 and the alternating current busbar 1.

Generally, the ac busbar 1 includes an a-phase busbar 11, a B-phase busbar 12, and a C-phase busbar 13, and the a-phase busbar 11, the B-phase busbar 12, and the C-phase busbar 13 are distributed in a row. In this embodiment, the ac busbar 1, the output positive busbar 4, and the output negative busbar 5 are all disposed on the same side of the housing 6, and the output positive busbar 4 and the output negative busbar 5 are disposed on a straight line parallel to the ac busbar 1. So set up for exchange female the arranging 1, the female arranging 4 of output positive pole, the female distance that arranges 5 three between of output negative pole is suitable, can guarantee that IGBT arranges 4, the female arranging 5 of output negative pole and exchange female 1 with the female arranging of output positive pole simultaneously and be connected.

In this embodiment, the input positive electrode busbar 2, the input negative electrode busbar 3, the output positive electrode busbar 4, and the output negative electrode busbar 5 are all connected to the thin film medium by welding.

In order to achieve better fixing and insulating effects, in this embodiment, the input positive busbar 2, the input negative busbar 3, the output positive busbar 4, and the output negative busbar 5 are all encapsulated in the housing 6 through epoxy resin. Correspondingly, the alternating current busbar 1 is also installed on the shell 6 in an epoxy resin encapsulation mode. By the arrangement, the shell 6, the input positive busbar 2, the input negative busbar 3, the output positive busbar 4, the output negative busbar 5 and the alternating current busbar 1 form a whole, and the whole is difficult to loosen and does not leak electricity.

Foretell embedment connected mode makes the utility model discloses from the outward appearance, the female row of 2, the female row of input negative pole 3, the female row of output positive pole 4, the female row of output negative pole 5 and the female inside that 1 of arranging of interchange all has a part to be located casing 6, and only the end is located casing 6's outside. For the input positive busbar 2 and the input negative busbar 3, the parts exposed outside the shell 6 are also the input terminals 8.

When the power supply is used, the input end 8 of the input positive busbar 2 and the input negative busbar 3 is connected to the power supply, the power supply usually outputs direct current, the direct current is buffered by a thin film medium and then flows to the output positive busbar 4 and the output negative busbar 5 and is transmitted to the IGBT through the pin structure 7 on the direct current, then the current is transmitted to the alternating current busbar 1 through the pin structure 7 by the IGBT, and finally, the continuous and stable current is output.

The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in the embodiments without departing from the principles and spirit of the invention, and the scope of the invention is to be accorded the full scope of the claims.

Claims

1. A novel thin film capacitor structure is characterized in that: the device comprises a shell, wherein a film medium is arranged in the shell; an input positive busbar and an input negative busbar are arranged on the shell, and one end of the input positive busbar and one end of the input negative busbar both extend into the shell and are connected with the thin film medium; the shell is also provided with an output positive electrode bus bar and an output negative electrode bus bar, one end of the output positive electrode bus bar and one end of the output negative electrode bus bar extend into the shell and are connected with the thin film medium, and the other end of the output positive electrode bus bar and the other end of the output negative electrode bus bar are connected with pin structures; the shell is further provided with an alternating current busbar, and one end of the alternating current busbar is connected with a pin structure.

2. The novel thin-film capacitor structure of claim 1, wherein: the input positive busbar, the input negative busbar, the output positive busbar and the output negative busbar are all connected with the thin film medium in a welding mode.

3. The novel thin-film capacitor structure of claim 1, wherein: the input positive electrode busbar and the input negative electrode busbar are encapsulated on the shell through epoxy resin.

4. The novel thin-film capacitor structure of claim 1, wherein: the output positive busbar and the output negative busbar are encapsulated on the shell through epoxy resin.

5. The novel thin-film capacitor structure of claim 1, wherein: the alternating-current busbar comprises an A-phase busbar, a B-phase busbar and a C-phase busbar which are distributed in a row.

6. The novel thin-film capacitor structure of claim 5, wherein: the alternating-current busbar, the output positive busbar and the output negative busbar are arranged on the same side face of the shell; the output positive busbar and the output negative busbar are distributed on a straight line parallel to the alternating-current busbar.