CN211134521U - Ultraviolet light curing device - Google Patents
Ultraviolet light curing device Download PDFInfo
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- CN211134521U CN211134521U CN201921603197.2U CN201921603197U CN211134521U CN 211134521 U CN211134521 U CN 211134521U CN 201921603197 U CN201921603197 U CN 201921603197U CN 211134521 U CN211134521 U CN 211134521U
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- 238000001514 detection method Methods 0.000 claims abstract description 14
- 238000001723 curing Methods 0.000 claims description 34
- 239000010453 quartz Substances 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000003848 UV Light-Curing Methods 0.000 claims description 18
- 230000006378 damage Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 4
- 238000007689 inspection Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 238000005286 illumination Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model provides an ultraviolet curing device, which comprises a light-emitting unit, a light intensity detection unit and a power regulation unit respectively connected with the light-emitting unit and the light intensity detection unit; the light emitting unit provides UV light, the light intensity detection unit can detect the light intensity of the UV light, and the power adjustment unit adjusts the power of the light emitting unit according to the light intensity of the UV light detected by the light intensity detection unit, so that the light intensity of the UV light is adjusted. The light intensity can be detected in real time, technological parameters can be adjusted timely, the precision of the processing technology is improved, and the harm of personnel to regular inspection of equipment can be avoided.
Description
Technical Field
The utility model relates to a semiconductor device makes technical field, in particular to ultraviolet curing device.
Background
The low-k dielectric film may be deposited on the wafer by CVD (chemical vapor deposition) or spin-on coating processes. These dielectric materials are cured by Ultraviolet (UV) radiation after deposition for a number of reasons, including enhancing and/or restoring the physical properties of the thin film material, such as enhancing the elastic modulus or hardness to improve mechanical strength for higher packaging quantities and/or to better withstand post-deposition processes such as etching, chemical cleaning, CMP (chemical mechanical polishing), wire bonding, and the like. In addition, UV curing is used to repair damage to the film caused by chemicals such as fluorine and nitrogen, and to restore the low-k properties of the film that may be enhanced during some post-film deposition processes. The addition of UV curing after the deposition of the low-K dielectric film on the wafer is needed to reduce the K value, but the UV curing process is a costly process in which the parameters, such as the ability to adjust the UV intensity, are often manually adjusted to adjust the shrinkage of the dielectric film, and maintenance of the equipment involves certain risks, causing injury to personnel, and requiring a significant amount of time to perform periodic inspections.
During UV curing of low K dielectric films, uniform UV curing intensity over the surface of the wafer is required to maintain a good process to avoid problems with film shrinkage at portions of the wafer, which may lead to variability in device performance. The ultraviolet curing device in the prior art cannot feed back light intensity in real time, so that the power and the shrinkage rate of the ultraviolet curing device cannot be monitored in real time, and the delayed feedback can cause that the ultraviolet curing device cannot be maintained in time when in failure, can cause damage to products and can reduce the processing technology; and a great deal of time is required for maintenance.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an ultraviolet curing device to solve the light intensity feedback time delay of the ultraviolet curing device among the prior art and need the problem of manual regulation.
In order to solve the above technical problem, the utility model provides an ultraviolet curing device, ultraviolet curing device includes:
the device comprises a light emitting unit, a light intensity detection unit and a power regulation unit which is respectively connected with the light emitting unit and the light intensity detection unit; wherein,
the light emitting unit provides UV light; the light intensity detection unit detects the light intensity of the UV light; the power adjusting unit adjusts the power of the light emitting unit according to the light intensity of the UV light detected by the light intensity detecting unit, so that the light intensity of the UV light emitted by the light emitting unit is adjusted.
Optionally, in the ultraviolet curing device, the light intensity detecting unit includes an illumination sensor and a digital controller, the illumination sensor is connected to the digital controller, and the illumination sensor detects the light intensity of the UV light, converts the light intensity into an electrical signal, and transmits the electrical signal to the digital controller to calculate the light intensity value.
Optionally, in the ultraviolet curing device, the light sensor is disposed on a surface of the light emitting unit.
Optionally, in the UV curing apparatus, the light emitting unit includes at least two UV lamps.
Optionally, in the UV curing apparatus, the light emitting unit further includes a first reflector and a second reflector, and the first reflector and the second reflector can reflect the UV light to form UV reflected light.
Optionally, in the UV curing apparatus, the first reflector and the second reflector are respectively disposed at two opposite sides of the UV lamp, and the first reflector is closer to the UV lamp than the second reflector.
Optionally, in the ultraviolet curing apparatus, the ultraviolet curing apparatus further includes a quartz window, the quartz window is located on a path of the UV reflection light, and the UV reflection light can pass through the quartz window.
Optionally, in the uv curing apparatus, the uv curing apparatus further includes a chamber, and the chamber has an opening facing the quartz window.
Optionally, in the ultraviolet curing device, a support frame is arranged in the chamber, and the support frame can bear the wafer.
Optionally, in the uv curing apparatus, the quartz window is located at the top of the chamber.
Optionally, in the UV curing apparatus, the UV light provided by the light emitting unit can enter the chamber through the quartz window.
In the ultraviolet curing device provided by the utility model, the ultraviolet curing device comprises a light emitting unit, a light intensity detecting unit and a power adjusting unit respectively connected with the light emitting unit and the light intensity detecting unit; the light emitting unit provides UV light, the light intensity detection unit can detect the light intensity of the UV light, and the power adjustment unit adjusts the power of the light emitting unit according to the light intensity of the UV light detected by the light intensity detection unit, so that the light intensity of the UV light is adjusted. Therefore, the light intensity can be detected in real time, technological parameters can be adjusted in time, the precision of the processing technology is improved, and the harm of personnel to regular inspection of equipment can be avoided.
Drawings
Fig. 1 is a schematic structural diagram of an ultraviolet curing device in an embodiment of the present invention;
fig. 2 is an electrical schematic diagram of an ultraviolet curing device according to an embodiment of the present invention;
fig. 3 is a graph showing a simulation graph of the light intensity of the uv curing device according to the embodiment of the present invention;
wherein the reference numerals are as follows:
100-an ultraviolet light curing device; 110-a light emitting unit; 111-UV lamp; 112-a first reflector; 113-a second reflector; 120-a light intensity detection unit; 121-illumination sensor, 122-digital controller; 130-a power conditioning unit; 140-a quartz window; 150-a chamber; 160-a support frame; 170-UV light received by the wafer.
Detailed Description
The ultraviolet curing device provided by the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more fully apparent from the following description and appended claims. It should be noted that the drawings are in simplified form and are not to precise scale, and are provided for convenience and clarity in order to facilitate the description of the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
Furthermore, the terms "upper", "lower", "left", "right", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1, fig. 1 is a structural diagram of an ultraviolet curing device according to an embodiment of the present invention; the uv curing apparatus 100 includes: a light emitting unit 110, a light intensity detecting unit 120, and a power adjusting unit 130 connected to the light emitting unit 110 and the light intensity detecting unit 120, respectively; wherein the light emitting unit 110 provides UV light; the light intensity detecting unit 120 detects the light intensity of the UV rays; the power adjusting unit 130 adjusts the power of the light emitting unit according to the light intensity of the UV light detected by the light intensity detecting unit 120, thereby adjusting the light intensity of the UV light emitted from the light emitting unit 110.
Specifically, the light emitting unit 110 includes at least two UV lamps 111, and the UV lamps 111 include, but are not limited to, mercury lamps, excimer lamps, arc lamps, microwave lamps, pulsed xenon flash lamps, UV light emitting diode lamps, and the like. The preferred microwave lamp that adopts of this embodiment, the volume of microwave lamp is less, can improve the reflector and to the collection rate of UV light.
Referring to fig. 2, the light intensity detecting unit 120 includes an illumination sensor 121 and a digital controller 122, and the illumination sensor 121 is connected to the digital controller 122. Preferably, the illumination sensor 121 employs a BH1750 sensor chip, and the BH1750 sensor chip includes a photodiode, an integrated operational amplifier circuit, and a digital-to-analog conversion circuit (ADC) therein. The light intensity of the detected UV light is converted into a current signal through the photosensitive diode, the current signal is converted into an analog voltage signal through the integrated operational amplifier circuit, the analog voltage signal is converted into a digital electric signal through the digital-to-analog conversion module, and the digital signal is transmitted to the digital controller through I2C communication (synchronous serial communication mode). The light sensor 121 can detect the light intensity immediately when the light emitting unit emits UV light, and transmit the light intensity to the digital controller. The intensity of the UV light can thus be detected in real time.
Referring to fig. 1, the illumination sensor 121 is disposed on the surface of the light emitting unit 110, and preferably, the illumination sensor 121 is disposed on a light emitting surface of the light emitting unit 110 to detect the UV light in real time. The light emitting unit 110 further includes a first reflector 112 and a second reflector 113, and the first reflector 112 and the second reflector 113 are respectively disposed at opposite sides of the UV lamp 111. The first reflector 112 and the second reflector may be arc-shaped, the UV lamp is positioned below the arc-shaped first reflector 112, the second reflector 113 is positioned below the UV lamp, and the first reflector 112 is closer to the UV lamp 111 than the second reflector 113. First reflector 112 when the UV lamp sent UV light, reflects and forms first UV reflection light, second reflector 113 can carry out secondary reflection with part first UV reflection light and form second UV reflection light to first reflector 112, then the light focus forms UV reflection light to increase the penetrating power of UV light, first reflector and second reflector have all utilized reflection or the refraction of light, and this application is no longer repeated to this.
The UV curing apparatus 100 further includes a quartz window 140, wherein the quartz window 140 is located on a path of the UV reflected light, and the quartz window is a transparent window synthesized by quartz so that the UV reflected light can pass through the quartz window 140.
The ultraviolet curing device further comprises a chamber 150, the chamber 150 has an opening, the opening faces the quartz window 140, a support frame 160 is arranged in the chamber, the support frame can bear a wafer, and a dielectric film is deposited on the surface of the wafer. Specifically, the wafer is positioned in the optical path of the UV reflected light within the process chamber 150 to receive the UV reflected light for curing of the dielectric film. The quartz window 140 is located at the top of the chamber 150, and the UV light provided by the light emitting unit 110 can enter the chamber 150 through the quartz window 140. The quartz window 140 can isolate the light emitting unit 110 from the chamber 150, so as to prevent exhaust gas from reaching the light emitting unit 110 when the wafer in the chamber 150 is subjected to the ultraviolet curing process, and prevent the UV lamp 111 from being polluted.
In the embodiment of the present application, the detected light intensity is transmitted to the digital controller 122 through the illumination sensor 121, the power adjusting unit 130 adjusts the power of the light emitting unit 110 according to the light intensity, adjusts the light intensity of the UV light by adjusting the power of the light emitting unit 110, and adjusts the light intensity of the UV light to control the shrinkage rate of the dielectric film on the surface of the wafer, so as to meet the process requirements. The light intensity and corresponding power settings of the light sensor, and the adjustment of the shrinkage are shown in table 1 below:
| light intensity feedback/cd | Power setting/w | Shrinkage rate |
| 200 | 75 | 16％ |
| 150 | 85 | 16％ |
| 100 | 95 | 16％ |
TABLE 1
The table 1 is only an illustration, and a more detailed light intensity and power correspondence may be specifically set, the correspondence (for example, a table shown in the table 1) may be set in the power adjusting unit 130, and the power adjusting unit 130 corresponds to the corresponding power according to the detected light intensity and controls the light emitting unit 110 to adjust the corresponding power. The above functions of the power adjusting unit 130 are the prior art, and may be implemented by combining existing software and hardware, or by using an existing hardware structure, which is not described herein again.
When the light intensity feedback is reduced, there may be a problem that the UV lamp 111 is used for a long time and needs to be replaced in time. When the UV lamp 111 is used for a long time or when the UV lamps 111 are damaged, the light intensity is weakened, and the power can be increased by adjusting accordingly. Alternatively, when the feedback of the UV light intensity is strong, the power can be adjusted accordingly to decrease the power, so as to adjust the shrinkage rate. The ultraviolet curing device 100 can be detected in real time, thereby improving the accuracy of the processing technology. The application provides an ultraviolet curing device 100 can avoid personnel's manual detection to bring harm to and the time when can saving regular testing maintenance.
Referring to fig. 3, in other embodiments of the present application, the light intensity parameter is input into modeling simulation software to obtain light intensity variation curves at different times. Where the curve 170 is the UV light absorption value of the wafer at a certain time, and the curves 170a and 170b represent different wafers. According to the value of the wafer for receiving the UV light, the light intensity of the UV light is adjusted so as to meet the process requirement. As can be seen from fig. 3: the technological requirements can be better met by adjusting the light intensity of the UV light.
The above description is only for the preferred embodiment of the present invention and is not intended to limit the scope of the present invention, and any modification and modification made by those skilled in the art according to the above disclosure are all within the scope of the claims.
Claims (11)
1. An ultraviolet curing apparatus, comprising: the device comprises a light emitting unit, a light intensity detection unit and a power regulation unit which is respectively connected with the light emitting unit and the light intensity detection unit; wherein,
the light emitting unit provides UV light; the light intensity detection unit detects the light intensity of the UV light; the power adjusting unit adjusts the power of the light emitting unit according to the light intensity of the UV light detected by the light intensity detecting unit, so that the light intensity of the UV light emitted by the light emitting unit is adjusted.
2. The UV curing apparatus of claim 1, wherein the light intensity detecting unit comprises a light intensity sensor and a digital controller, the light intensity sensor is connected to the digital controller, the light intensity sensor detects the light intensity of the UV light and converts the light intensity into an electrical signal to be transmitted to the digital controller to calculate the value of the light intensity.
3. The uv curing apparatus according to claim 2, wherein the light sensor is disposed on a surface of the light emitting unit.
4. The UV curing apparatus of claim 1, wherein said light emitting unit comprises at least two UV lamps.
5. The UV curing apparatus of claim 4, wherein said light emitting unit further comprises a first reflector and a second reflector, said first reflector and said second reflector being disposed on said UV lamp side, said first reflector and said second reflector being capable of reflecting said UV rays to form UV reflected rays.
6. The UV curing apparatus of claim 5, wherein said first reflector and said second reflector are respectively disposed on opposite sides of said UV lamp, said first reflector being closer to said UV lamp than said second reflector.
7. The UV curing apparatus of claim 5, further comprising a quartz window, said quartz window being positioned in a path of said UV reflected light, said UV reflected light being capable of passing through said quartz window.
8. The UV curing apparatus of claim 7, further comprising a chamber having an opening facing said quartz window.
9. The UV curing apparatus of claim 8, wherein a support frame is disposed in said chamber, said support frame being capable of supporting a wafer.
10. The uv curing apparatus of any one of claims 8-9, wherein the quartz window is located at a top of the chamber.
11. The UV curing apparatus of any one of claims 8-9, wherein the UV light provided by the light emitting unit can enter the chamber through the quartz window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921603197.2U CN211134521U (en) | 2019-09-24 | 2019-09-24 | Ultraviolet light curing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921603197.2U CN211134521U (en) | 2019-09-24 | 2019-09-24 | Ultraviolet light curing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211134521U true CN211134521U (en) | 2020-07-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921603197.2U Active CN211134521U (en) | 2019-09-24 | 2019-09-24 | Ultraviolet light curing device |
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| CN (1) | CN211134521U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114323263A (en) * | 2021-12-30 | 2022-04-12 | 拓荆科技股份有限公司 | UV light detection structure and UV treatment facility |
-
2019
- 2019-09-24 CN CN201921603197.2U patent/CN211134521U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114323263A (en) * | 2021-12-30 | 2022-04-12 | 拓荆科技股份有限公司 | UV light detection structure and UV treatment facility |
| CN114323263B (en) * | 2021-12-30 | 2023-10-20 | 拓荆科技股份有限公司 | UV light detection structure and UV treatment equipment |
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