CN211089624U - Radio frequency anti-burning protection circuit and high-power radio frequency switch - Google Patents
Radio frequency anti-burning protection circuit and high-power radio frequency switch Download PDFInfo
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- CN211089624U CN211089624U CN202020310339.2U CN202020310339U CN211089624U CN 211089624 U CN211089624 U CN 211089624U CN 202020310339 U CN202020310339 U CN 202020310339U CN 211089624 U CN211089624 U CN 211089624U
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Abstract
The utility model relates to a radio frequency microwave communication field, in particular to anti burning protection circuit of radio frequency and high power radio frequency switch. The utility model discloses an anti burning protection circuit of radio frequency includes first 3dB coupler, second 3dB coupler, first parallelly connected unit, the parallelly connected unit of second, first matching load, second matching load, first radio frequency circuit and second radio frequency circuit. The utility model discloses an anti burning protection circuit of radio frequency and high power radio frequency switch, power capacity is big, and insertion loss is little, and the isolation is high, and the standing wave stable performance, and the application is nimble, and the cost is lower, has wide application prospect and value.
Description
Technical Field
The utility model relates to a radio frequency microwave communication field, in particular to anti burning protection circuit of radio frequency and high power radio frequency switch.
Background
With the development of communication technology, radio frequency circuits in a communication system are more and more easy to burn, and the improvement of the anti-burning protection capability of the radio frequency circuits plays an important role in design. For example, a base station system usually has a high-sensitivity low-noise amplifier at the rf receive front-end. High power leakage of signals transmitted inside the system and nearby high power interference signals may cause burning of core semiconductor devices in the low noise amplifier, resulting in overall system failure. Furthermore, with the rise of the mobile communication standard of the fifth Generation, i.e. 5G (5th-Generation), the complexity of the communication system rises sharply, and the power required by the system to process the system also increases. For macro base stations and small base stations which are widely applied, the average transmitting power of a power amplifier in a base station system is large. Taking a micro base station as an example, the average transmission power of a power amplifier is greater than 10W, and meanwhile, considering that at least 9dB of peak-to-average ratio (PAR) is required, the receiving end needs to process the maximum power of 80W. Therefore, the improvement of the anti-burning capability of the radio frequency circuit plays an important role in the overall design of the system.
A conventional rf anti-burnout protection circuit is shown in fig. 1a, and the rf anti-burnout protection circuit mainly includes a single-pole double-throw switch and a load resistor. Single pole double throw switches have three ports, P1, P2, and P3, respectively. When the switch path is from P1 to P2, the signal can pass through with low insertion loss. When abnormal high-power signals come, the switch path is switched from P1 to P3, most of the power is absorbed by the load, and therefore the anti-burnout protection effect is achieved. The basic structure of the single-pole double-throw switch is shown in fig. 1b, the single-pole double-throw switch mainly comprises series units 101 and 102 and parallel units 103 and 104, the series unit 102 and the parallel unit 103 are controlled by a control signal VC, the series unit 101 and the parallel unit 104 are controlled by a control signal VCF, and the control signals VC and VCF are a pair of opposite phase control signals. When the control signal VC is high, the series unit 102 and the parallel unit 103 are turned on, the series unit 101 and the parallel unit 104 are turned off, and the rf signal flows from the rf port P1 to the rf port P3. When the control signal VC is low, the series unit 102 and the parallel unit 103 are turned off, the series unit 101 and the parallel unit 104 are turned on, and the rf signal flows from the rf port P1 to the rf port P2.
The radio frequency anti-burning protection circuit structure has the following defects:
(1) the bearing power is low. When the series unit is conducted, the radio frequency signal directly acts on the parallel unit, and when the parallel unit is conducted, the radio frequency signal directly acts on the series unit. When the input power is increased, the voltage swing can quickly reach the breakdown voltage swing of the parallel unit/the series unit, and the bearing power of the radio frequency anti-burning protection circuit is limited;
(2) the standing wave performance is unstable. The single-pole double-throw switch in the traditional radio frequency anti-burnout protection circuit structure belongs to a reflection type switch, the standing wave characteristics of the switch in an on state and an off state are different, particularly the standing wave in the off state is poor, and the stability and the reliability of a system are influenced;
(3) the insertion loss is large. The series unit can introduce large insertion loss, and the overall performance of the system is affected.
Therefore, a new type of rf anti-burn protection circuit is needed.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an anti burnout protection circuit of radio frequency and high power radio frequency switch, power capacity is big, and insertion loss is little, and the isolation is high, and the standing wave stable performance, and use in a flexible way, the cost is lower, has wide application prospect and value.
The utility model discloses a radio frequency anti-burnout protection circuit, which comprises a first 3dB coupler, a second 3dB coupler, a first parallel unit, a second parallel unit, a first matching load, a second matching load, a first radio frequency circuit and a second radio frequency circuit;
the input end of the first 3dB coupler is connected with a radio frequency input port, the coupling end of the first 3dB coupler is respectively connected with one end of the first parallel unit and the input end of the first radio frequency circuit, the through end of the first 3dB coupler is respectively connected with one end of the second parallel unit and the input end of the second radio frequency circuit, and the isolation end of the first 3dB coupler is connected with one end of the first matched load;
the input end of the second 3dB coupler is connected with a radio frequency output port, the coupling end of the second 3dB coupler is connected with the output end of the second radio frequency circuit, the through end of the second 3dB coupler is connected with the output end of the first radio frequency circuit, and the isolation end of the second 3dB coupler is connected with one end of the second matched load;
the other ends of the first parallel unit and the second parallel unit are respectively grounded, and control ports of the first parallel unit and the second parallel unit are respectively connected with a control signal;
the other ends of the first matched load and the second matched load are respectively grounded.
Optionally, each of the first parallel unit and the second parallel unit comprises one transistor and one high-impedance device; a first electrode of the transistor is connected with one end of the high-resistance device; and the other end of the high-resistance device is connected with the control port of the parallel unit.
Optionally, each of the first 3dB coupler and the second 3dB coupler comprises a lange coupler or a hybrid 3dB coupler.
Optionally, the RF anti-burn protection circuit is monolithically integrated using RF CMOS, GaAs, BiCMOS, RF SOI processes.
Optionally, discrete devices are used to build the radio frequency burn-in resistant protection circuit.
The utility model discloses a high-power radio frequency switch, which comprises a first 3dB coupler, a second 3dB coupler, a first parallel unit, a second parallel unit, a first matching load and a second matching load;
the input end of the first 3dB coupler is connected with a first radio frequency port, the coupling end of the first 3dB coupler is respectively connected with one end of the first parallel unit and the through end of the second 3dB coupler, the through end of the first 3dB coupler is respectively connected with one end of the second parallel unit and the coupling end of the second 3dB coupler, and the isolation end of the first 3dB coupler is connected with one end of the first matched load;
the input end of the second 3dB coupler is connected with a second radio frequency port, the coupling end of the second 3dB coupler is respectively connected with one end of the second parallel unit and the through end of the first 3dB coupler, the through end of the second 3dB coupler is respectively connected with one end of the first parallel unit and the coupling end of the first 3dB coupler, and the isolation end of the second 3dB coupler is connected with one end of the second matched load;
the other ends of the first parallel unit and the second parallel unit are respectively grounded, and control ports of the first parallel unit and the second parallel unit are respectively connected with a control signal;
the other ends of the first matched load and the second matched load are respectively grounded.
Optionally, each of the first parallel unit and the second parallel unit comprises one transistor and one high-impedance device; a first electrode of the transistor is connected with one end of the high-resistance device; and the other end of the high-resistance device is connected with the control port of the parallel unit.
Optionally, each of the first 3dB coupler and the second 3dB coupler comprises a lange coupler or a hybrid 3dB coupler.
Optionally, the high power radio frequency switch is monolithically integrated using RF CMOS, GaAs, BiCMOS, RF SOI processes.
Optionally, discrete devices are employed to build the high power radio frequency switch.
Compared with the prior art, the utility model, main difference and effect lie in:
(1) the power capacity is large. The utility model discloses a first 3dB coupler and second 3dB coupler, 3dB coupler can be divided into two with input power, consequently theoretically, for the anti protection circuit that burns out of the radio frequency of traditional structure, the utility model discloses an anti protection circuit that burns out of radio frequency's power capacity can improve one time. Furthermore, the utility model discloses a parallelly connected unit with series transistor has further improved the anti burnout protection circuit's of radio frequency maximum power that bears.
(2) The insertion loss is small. For the anti protection circuit that burns out of radio frequency of traditional structure, the utility model discloses an anti protection circuit that burns out of radio frequency has omitted the series unit, though insertion loss also can be introduced to the 3dB coupler, but the anti holistic insertion loss that burns out of protection circuit of radio frequency still can reduce.
(3) The isolation is high. When the radio frequency signal is an abnormal high-power signal, only a small part of the radio frequency signal leaks into the radio frequency circuit, so that the radio frequency circuit cannot be burnt, and the isolation of the radio frequency anti-burning protection circuit is improved. Furthermore, the utility model discloses a parallelly connected unit with parallelly connected transistor has further improved the anti burnout protection circuit's of radio frequency isolation, and the signal power that leaks to get into the radio frequency circuit also can be littleer.
(4) The standing wave performance is stable. The utility model discloses a first matching load and second matching load, when radio frequency signal is unusual high-power signal, the radio frequency signal most reflects the isolation end to 3dB coupler, is absorbed by the matching load, consequently for the anti protection circuit that burns out of the radio frequency of traditional structure, the utility model discloses an anti protection circuit that burns out of radio frequency is absorptive. No matter the utility model discloses an anti burning protection circuit of radio frequency is in which kind of state, does not all have signal reflection to the input, and the anti burning protection circuit of radio frequency's standing wave characteristic is stable always, consequently can keep the stability of system, has improved the reliability of system.
(5) The utility model discloses an anti burnout protection circuit of radio frequency can adopt multiple technologies such as RF CMOS, GaAs, BiCMOS, RF SOI to carry out monolithic integration and realize, also can adopt discrete device to build, uses in a flexible way, and the cost is lower, has wide application prospect and value.
Drawings
FIG. 1a is a schematic diagram of a conventional RF burn-in protection circuit;
FIG. 1b is a schematic diagram of a single-pole double-throw switch in a conventional RF burn-in protection circuit;
FIG. 2 discloses a schematic diagram of a radio frequency burn-in protection circuit, according to some embodiments of the present application;
FIG. 3 discloses a schematic diagram of a radio frequency anti-burn-out protection circuit including a parallel cell with transistors and high resistance devices, according to some embodiments of the present application;
FIG. 4 discloses a schematic diagram of a radio frequency anti-burn out protection circuit including a parallel cell with series transistors, according to some embodiments of the present application;
FIG. 5 discloses a schematic diagram of a radio frequency burn-in protection circuit including a parallel cell with parallel transistors, according to some embodiments of the present application;
FIG. 6 discloses a schematic diagram of a radio frequency anti-burn out protection circuit including a parallel unit with a parallel set of transistors, according to some embodiments of the present application;
FIG. 7 discloses a schematic diagram of a high power radio frequency switch, according to some embodiments of the present application;
fig. 8 discloses a schematic diagram of a high power radio frequency switch comprising a parallel unit with transistors and high resistance devices, according to some embodiments of the present application;
fig. 9 discloses a schematic diagram of a high power radio frequency switch including a parallel cell with series transistors, according to some embodiments of the present application;
FIG. 10 discloses a schematic diagram of a high power radio frequency switch including a parallel cell with parallel transistors, according to some embodiments of the present application;
fig. 11 discloses a schematic diagram of a high power radio frequency switch including a parallel unit with a parallel set of transistors, according to some embodiments of the present application.
Detailed Description
In order to make the purpose and technical solution of the embodiments of the present invention clearer, the following description will clearly and completely describe the technical solution of the embodiments of the present invention by combining the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only some of the embodiments of the present invention, and not all of them. All other embodiments, which can be obtained by a person skilled in the art without any inventive work based on the described embodiments of the present invention, belong to the protection scope of the present invention.
According to some embodiments of the present application, a radio frequency burn-in protection circuit is disclosed. Fig. 2 is a schematic diagram of the rf burn-in protection circuit.
Specifically, as shown in fig. 2, the rf anti-burnout protection circuit 200 includes a first 3dB coupler 201, a second 3dB coupler 202, a first parallel unit 203, a second parallel unit 204, a first matched load 205, a second matched load 206, a first rf circuit 207, and a second rf circuit 208.
An input end 201a of the first 3dB coupler 201 is connected to the rf input port RFin, a coupling end 201b of the first 3dB coupler 201 is connected to one end of the first parallel unit 203 and an input end of the first rf circuit 207, a through end 201c of the first 3dB coupler 201 is connected to one end of the second parallel unit 204 and an input end of the second rf circuit 208, and an isolation end 201d of the first 3dB coupler 201 is connected to one end of the first matching load 205.
The input end 202a of the second 3dB coupler 202 is connected to the rf output port RFout, the coupling end 202b of the second 3dB coupler 202 is connected to the output end of the second rf circuit 208, the through end 202c of the second 3dB coupler 202 is connected to the output end of the first rf circuit 207, and the isolation end 202d of the second 3dB coupler 202 is connected to one end of the second matching load 206.
One end of the first parallel unit 203 is connected to the coupling end 201b of the first 3dB coupler 201 and the input end of the first rf circuit 207, respectively, the other end of the first parallel unit 203 is grounded, and the control port of the first parallel unit 203 is connected to the control signal VC.
One end of the second parallel unit 204 is connected to the through-port 201c of the first 3dB coupler 201 and the input terminal of the second rf circuit 208, respectively, the other end of the second parallel unit 204 is grounded, and the control port of the second parallel unit 204 is connected to the control signal VC.
One end of the first matched load 205 is connected to the isolation terminal 201d of the first 3dB coupler 201, and the other end of the first matched load 205 is grounded.
One end of the second matched load 206 is connected to the isolated end 202d of the second 3dB coupler 202, and the other end of the second matched load 206 is grounded.
In some embodiments, the control ports of the first parallel unit 203 and the second parallel unit 204 may be connected to the same control signal VC. When the control signal VC is low, the first parallel unit 203 and the second parallel unit 204 are turned off. When the control signal VC is high, the first parallel unit 203 and the second parallel unit 204 are turned on.
Now, it is assumed that a radio frequency signal is input from a radio frequency input port RFin of the radio frequency anti-burn protection circuit 200, and is divided into two paths of signals after passing through the first 3dB coupler 201, and the phases of the two paths of signals are different by 90 °. When the rf signal is a normal small signal, the control signal VC is at a low level, the first parallel unit 203 and the second parallel unit 204 are disconnected, and a high impedance state is presented, which does not affect the transmission of the signal, and the two paths of signals pass through the first rf circuit 207 and the second rf circuit 208, and are combined into one path of signal by the second 3dB coupler 202, and are output from the rf output port RFout of the rf anti-burn protection circuit 200. When the radio frequency signal is an abnormal high-power signal, the control signal VC is at a high level, the first parallel unit 203 and the second parallel unit 204 are turned on, and present a low-resistance state, and are respectively equivalent to a small resistor connected in parallel to the ground, a part of the high-power radio frequency signal passes through the resistor to the ground, and most of the high-power radio frequency signal is reflected to the isolation end 201d of the first 3dB coupler 201, and is absorbed by the first matching load 205, only a small part of the signal leaks into the first radio frequency circuit 207 and the second radio frequency circuit 208, and the first radio frequency circuit 207 and the second radio frequency circuit 208 are not burnt.
The utility model discloses a first 3dB coupler 201 and second 3dB coupler 202, 3dB coupler can be divided into two with input power, consequently theoretically, for the anti protection circuit that burns out of the radio frequency of traditional structure, the utility model discloses an anti protection circuit 200 that burns out of radio frequency's power capacity can improve one time.
For the anti protection circuit that burns out of radio frequency of traditional structure, the utility model discloses an anti protection circuit 200 that burns out of radio frequency has omitted the series unit, though insertion loss also can be introduced to the 3dB coupler, but the anti protection circuit 200 holistic insertion loss that burns out of radio frequency still can reduce.
When the rf signal is an abnormal high-power signal, only a small portion of the rf signal leaks into the rf circuit, so that the rf circuit is not burned, and the isolation of the rf anti-burn protection circuit 200 is improved.
The utility model discloses a first matching load 205 and second matching load 206, when radio frequency signal is unusual high-power signal, the radio frequency signal most reflects the isolation end to 3dB coupler, is absorbed by the matching load, consequently for the anti protection circuit that burns out of the radio frequency of traditional structure, the utility model discloses an anti protection circuit that burns out of radio frequency 200 is absorptive. No matter the utility model discloses an anti protection circuit 200 that burns out of radio frequency is in which kind of state, does not all have signal reflection to the input, and the standing wave characteristic of the anti protection circuit 200 that burns out of radio frequency is stable always, consequently can keep the stability of system, has improved the reliability of system.
In some embodiments, the RF anti-burn protection circuit 200 may be monolithically integrated using a variety of processes such as RF CMOS, GaAs, BiCMOS, RF SOI, and the like.
In some embodiments, discrete devices may be employed to build the rf anti-burn protection circuit 200.
The utility model discloses an anti protection circuit 200 that burns out of radio frequency uses in a flexible way, and the cost is lower, has wide application prospect and value.
In some embodiments, each of the first and second 3dB couplers 201 and 202 may comprise a lange (L ange) coupler or a hybrid 3dB coupler.
Furthermore, it is understood that in other embodiments, the 3dB coupler may also include various other 3dB directional couplers, without limitation.
In some embodiments, the first matching load 205 and the second matching load 206 may be designed to be 50 Ω matched, and may be various matching networks with a resistance or impedance of 50 Ω.
In some embodiments, the first and second radio frequency circuits 207, 208 may be identical and may include amplifiers, oscillators, filters, and the like.
According to some embodiments of the present application, a schematic diagram of a radio frequency anti-burn-out protection circuit including a parallel cell with a transistor and a high resistance device is disclosed. Fig. 3 is a schematic diagram of the rf burn-in protection circuit.
Specifically, as shown in fig. 3, the rf anti-burnout protection circuit 300 includes a first 3dB coupler 201, a second 3dB coupler 202, a first parallel unit 303, a second parallel unit 304, a first matched load 205, a second matched load 206, a first rf circuit 207, and a second rf circuit 208.
Each of the first parallel unit 303 and the second parallel unit 304 includes one transistor M1 and one high-resistance device Zg.
A first electrode of the transistor M1 is connected to one end of the high-resistance device Zg, a second electrode of the transistor M1 is connected to one end of the parallel unit, and a third electrode of the transistor M1 is connected to the other end of the parallel unit, and thus is grounded.
One end of the high-resistance device Zg is connected to the first electrode of the transistor M1, and the other end of the high-resistance device Zg is connected to the control port of the parallel unit, thereby being controlled by the control signal VC.
In some embodiments, the high resistance device may include a resistor, an inductor, or a combination of a resistor and an inductor.
In some embodiments, as shown in FIG. 3, the impedance of the high-resistance device Zg is generally much greater than the impedance of the parasitic capacitance between node ① and node ②, and the parasitic capacitance between node ② and node ③, such that the voltage magnitude at node ① is proportional to the voltage magnitude at node ②.
In some embodiments, the Transistor may be implemented by a Field Effect Transistor (FET), and specifically includes a Junction Field-Effect Transistor (JFET), a High Electron Mobility Transistor (HEMT), a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), and the like.
In some embodiments, the transistors are implemented using N-type Field Effect transistors (NMOS FETs) or P-type Field Effect transistors (PMOS FETs).
In some embodiments, as shown in fig. 3, the transistor M1 may be an NMOS transistor, and the first electrode of the transistor M1 may be a gate, the second electrode of the transistor M1 may be a drain, and the third electrode of the transistor M1 may be a source.
In addition, it is understood that in other embodiments, the transistor M1 may be implemented by other transistors, and is not limited herein.
According to some embodiments of the present application, a schematic diagram of a radio frequency anti-burn-down protection circuit including a parallel cell with series transistors is disclosed. Fig. 4 is a schematic diagram of the rf burn-in protection circuit.
Specifically, as shown in fig. 4, the rf anti-burnout protection circuit 400 includes a first 3dB coupler 201, a second 3dB coupler 202, a first parallel unit 403, a second parallel unit 404, a first matched load 205, a second matched load 206, a first rf circuit 207, and a second rf circuit 208.
Each of the first parallel unit 403 and the second parallel unit 404 includes a plurality of transistors M1,1-M1, n and a plurality of high-resistance devices Zg,1-Zg, n.
A plurality of transistors M1,1-M1, n are connected in series, each having a first electrode connected to one end of a high impedance device, the second electrode of a first transistor M1,1 being connected to one end of the parallel unit, the third electrode of the first transistor M1,1 being connected to the second electrode of a second transistor M1,2, the third electrode of the second transistor M1,2 being connected to the second electrode of a third transistor M1,3, and so on, and the third electrode of the last transistor M1, n being connected to the other end of the parallel unit and thus to ground.
One end of each high-resistance device is connected with the first electrode of one transistor, and the other ends of the plurality of high-resistance devices Zg,1-Zg, n are connected with each other and with the control port of the parallel unit, so as to be controlled by a control signal VC in common.
The utility model discloses a parallelly connected unit with series transistor has further improved and has penetratedFor example, if the maximum voltage that can be borne by a single transistor due to physical damage is Vmax, then the maximum voltage that can be borne by n transistors connected in series will ideally be increased to n × Vmax, and thus the maximum power of the RF burn-up protection circuit 400 is also increased by n2And (4) doubling.
According to some embodiments of the present application, a schematic diagram of a radio frequency anti-burn-down protection circuit including a parallel cell with parallel transistors is disclosed. Fig. 5 is a schematic diagram of the rf burn-in protection circuit.
Specifically, as shown in fig. 5, the rf anti-burnout protection circuit 500 includes a first 3dB coupler 201, a second 3dB coupler 202, a first parallel unit 503, a second parallel unit 504, a first matched load 205, a second matched load 206, a first rf circuit 207, and a second rf circuit 208.
Each of the first parallel unit 503 and the second parallel unit 504 includes a plurality of transistors M1,1-M1, n and a plurality of high-resistance devices Zg,1-Zg, n.
A plurality of transistors M1,1-M1, n are connected in parallel, a first electrode of each transistor being connected to one terminal of a high resistance device, a second electrode of each transistor being connected to one terminal of the parallel cell, and a third electrode of each transistor being connected to the other terminal of the parallel cell and thus to ground.
One end of each high-resistance device is connected with the first electrode of one transistor, and the other ends of the plurality of high-resistance devices Zg,1-Zg, n are connected with each other and with the control port of the parallel unit, so as to be controlled by a control signal VC in common.
The utility model discloses a parallelly connected unit with parallelly connected transistor has improved the anti bandwidth of burning out protection circuit 500 of radio frequency to the anti isolation of burning out protection circuit 500 of radio frequency has further been improved. The transistors are connected in parallel, some inductors or transmission lines are added for matching, and when the parallel connection unit is disconnected, the parasitic capacitance of the single transistor can be distributed in the transistors, so that the distributed matching is easy to realize, and the bandwidth is improved. When the parallel unit is conducted, each transistor is equivalent to a small resistor connected to the ground in parallel, the radio-frequency signal is connected to the ground through the resistor, the isolation degree of the radio-frequency anti-burning protection circuit 500 can be further improved through reasonable design, and the signal power leaked into the radio-frequency circuit is smaller.
According to some embodiments of the present application, a schematic diagram of a radio frequency burn-in protection circuit including a parallel unit with a parallel set of transistors is disclosed. Fig. 6 is a schematic diagram of the rf burn-in protection circuit.
Specifically, as shown in fig. 6, the rf anti-burnout protection circuit 600 includes a first 3dB coupler 201, a second 3dB coupler 202, a first parallel unit 603, a second parallel unit 604, a first matched load 205, a second matched load 206, a first rf circuit 207, and a second rf circuit 208.
Each of the first parallel unit 603 and the second parallel unit 604 includes a plurality of transistor sets and a plurality of high-resistance devices Zg,11-Zg, ij.
A plurality of transistor sets connected in parallel, each transistor set comprising a plurality of transistors M1,1-M1, j; …, respectively; mi,1-Mi, j, a plurality of transistors M1,1-M1, j; …, respectively; mi,1-Mi, j are connected in series, the first electrode of each transistor is connected to one end of a high impedance device, the second electrode of the first transistor M1,1-Mi,1 is connected to one end of the parallel unit, the third electrode of the first transistor M1,1-Mi,1 is connected to the second electrode of the second transistor M1,2-Mi,2, the third electrode of the second transistor M1,2-Mi,2 is connected to the second electrode of the third transistor M1,3-Mi,3, and so on, and the third electrode of the last transistor M1, j-Mi, j is connected to the other end of the parallel unit, and thus to ground.
One end of each high-resistance device is connected with the first electrode of one transistor, and the other ends of the plurality of high-resistance devices Zg,11-Zg, ij are connected with each other and with the control port of the parallel unit so as to be controlled by a control signal VC in common.
The utility model discloses a parallel unit with parallelly connected transistor set can have the above-mentioned advantage of series connection transistor and parallelly connected transistor simultaneously.
According to some embodiments of the present application, a high power radio frequency switch is disclosed. Fig. 7 is a schematic diagram of the high power radio frequency switch. When the radio frequency circuit in the radio frequency anti-burning protection circuit is short-circuited or a section of transmission line is used as the radio frequency circuit in the radio frequency anti-burning protection circuit, the radio frequency anti-burning protection circuit can be changed into a high-power radio frequency switch.
Specifically, as shown in fig. 7, the high power rf switch 700 includes a first 3dB coupler 701, a second 3dB coupler 702, a first parallel unit 703, a second parallel unit 704, a first matched load 705, and a second matched load 706.
An input terminal 701a of the first 3dB coupler 701 is connected to a first RF port RF1, a coupling terminal 701b of the first 3dB coupler 701 is connected to one end of the first parallel unit 703 and a through terminal 702c of the second 3dB coupler 702, respectively, a through terminal 701c of the first 3dB coupler 701 is connected to one end of the second parallel unit 704 and a coupling terminal 702b of the second 3dB coupler 702, respectively, and an isolation terminal 701d of the first 3dB coupler 701 is connected to one end of the first matched load 705.
An input end 702a of the second 3dB coupler 702 is connected to the second RF port RF2, a coupling end 702b of the second 3dB coupler 702 is connected to one end of the second parallel unit 704 and a through end 701c of the first 3dB coupler 701, respectively, a through end 702c of the second 3dB coupler 702 is connected to one end of the first parallel unit 703 and a coupling end 701b of the first 3dB coupler 701, respectively, and an isolation end 702d of the second 3dB coupler 702 is connected to one end of the second matching load 706.
One end of the first parallel unit 703 is connected to the coupling end 701b of the first 3dB coupler 701 and the through end 702c of the second 3dB coupler 702, respectively, the other end of the first parallel unit 703 is grounded, and the control port of the first parallel unit 703 is connected to the control signal VC.
One end of the second parallel unit 704 is connected to the through terminal 701c of the first 3dB coupler 701 and the coupling terminal 702b of the second 3dB coupler 702, respectively, the other end of the second parallel unit 704 is grounded, and the control port of the second parallel unit 704 is connected to the control signal VC.
One end of the first matched load 705 is connected to the isolated end 701d of the first 3dB coupler 701, and the other end of the first matched load 705 is grounded.
One end of the second matched load 706 is connected to the isolated terminal 702d of the second 3dB coupler 702 and the other end of the second matched load 706 is grounded.
In some embodiments, the control ports of the first parallel unit 703 and the second parallel unit 704 may be connected to the same control signal VC. When the control signal VC is low, the first parallel unit 703 and the second parallel unit 704 are turned off. When the control signal VC is high, the first parallel unit 703 and the second parallel unit 704 are turned on.
In some embodiments, the high power rf switch 700 may be designed for bi-directional operation, while in other embodiments, the high power rf switch 700 may be designed for uni-directional operation.
When the high power RF switch 700 is designed for bi-directional operation, both the first RF port RF1 and the second RF port RF2 are input/output ports. Radio frequency signals may be input from the first radio frequency port RF1 and output from the second radio frequency port RF2, and radio frequency signals may also be input from the second radio frequency port RF2 and output from the first radio frequency port RF 1.
When the high power RF switch 700 is designed to operate unidirectionally, the first RF port RF1 is the input port and the second RF port RF2 is the output port, or the first RF port RF1 is the output port and the second RF port RF2 is the input port. Radio frequency signals can only be input from the first radio frequency port RF1 and output from the second radio frequency port RF2, or radio frequency signals can only be input from the second radio frequency port RF2 and output from the first radio frequency port RF 1.
Now, it is assumed that a radio frequency signal is input from the first radio frequency port RF1, and is split into two signals after passing through the first 3dB coupler 701, and the phases of the two signals are different by 90 °. When the control signal VC is at a low level, the first parallel unit 703 and the second parallel unit 704 are disconnected, a high impedance state is presented, transmission of signals is not affected basically, two paths of signals are combined into one path of signal by the second 3dB coupler 702 and output from the second RF port RF2, and at this time, the high power RF switch 700 is equivalently in a conducting state. When the control signal VC is at a high level, the first parallel unit 703 and the second parallel unit 704 are turned on, and exhibit a low resistance state, and are respectively equivalent to a small resistor connected in parallel to the ground, and a part of the rf signal passes through the resistor to the ground, and most of the rf signal is reflected to the isolation terminal 701d of the first 3dB coupler 701, and is absorbed by the first matching load 705, and only a small part of the signal leaks to the output terminal. The two signals are combined into one signal by the second 3dB coupler 702 and output from the second RF port RF2, and at this time, the high power RF switch 700 is equivalently in an off state.
The utility model discloses a first 3dB coupler 701 and second 3dB coupler 702, 3dB coupler can be divided into two with input power, consequently theoretically, for the switch circuit of traditional structure, the utility model discloses a high power radio frequency switch 700's power capacity can improve one time.
For the switch circuit of traditional structure, the utility model discloses a high power radio frequency switch 700 has omitted the series unit, and although insertion loss also can be introduced to the 3dB coupler, the holistic insertion loss of high power radio frequency switch 700 still can reduce.
When the utility model discloses a high power radio frequency switch 700 equivalence is when the off-state, and radio frequency signal only has very little some signal leakage to the output, has consequently reduced the signal power of output greatly, has improved the isolation between two radio frequency ports.
The utility model discloses a first matched load 705 and second matched load 706, work as the utility model discloses a high power radio frequency switch 700 equivalence is when the off-state, and the radio frequency signal most reflects the isolation end to 3dB coupler, is absorbed by the matched load, consequently for the reflective switch circuit of traditional structure, the utility model discloses a high power radio frequency switch 700 is absorptive. No matter the utility model discloses a high power radio frequency switch 700 is in the on or off state, does not all have signal reflection to the input, and high power radio frequency switch 700's standing wave characteristic is stable always, consequently can keep the stability of system, has improved the reliability of system.
In some embodiments, the high power radio frequency switch 700 may be monolithically integrated using a variety of processes such as RF CMOS, GaAs, BiCMOS, RF SOI, and the like.
In some embodiments, discrete devices may be employed to build the high power rf switch 700.
The utility model discloses a high power radio frequency switch 700 uses in a flexible way, and the cost is lower, has wide application prospect and value.
In some embodiments, each of the first 3dB coupler 701 and the second 3dB coupler 702 may comprise a lange (L ange) coupler or a hybrid structure 3dB coupler.
Furthermore, it is understood that in other embodiments, the 3dB coupler may also include various other 3dB directional couplers, without limitation.
The first 3dB coupler 701 and the second 3dB coupler 702 may be designed to be identical or may be designed to be separated. Generally, when the high power rf switch 700 is designed to operate bidirectionally, the first 3dB coupler 701 and the second 3dB coupler 702 may be designed to be identical. And when the high power rf switch 700 is designed to operate unidirectionally, the first 3dB coupler 701 and the second 3dB coupler 702 may be separately designed.
For example, if the high power RF switch 700 is designed to operate unidirectionally, and the first RF port RF1 is the input port and the second RF port RF2 is the output port, the first 3dB coupler 701 is designed with the main consideration of power handling. When the high-power rf switch 700 works normally in a single direction, the output end does not need to bear large power, so the design of the second 3dB coupler 702 mainly considers insertion loss, amplitude imbalance, phase error, area, and the like.
In some embodiments, the first and second matched loads 705 and 706 may be designed for 50 Ω matching and may be various matching networks with a resistance or impedance of 50 Ω.
The first and second matched loads 705 and 706 may be designed to be identical or may be designed to be separate. Generally, when the high power rf switch 700 is designed to operate bi-directionally, the first and second matched loads 705, 706 may be designed to be identical. And when the high power rf switch 700 is designed to operate unidirectionally, the first and second matched loads 705 and 706 may be designed separately.
For example, if the high power RF switch 700 is designed to operate unidirectionally, and the first RF port RF1 is the input port and the second RF port RF2 is the output port, the first matched load 705 is designed primarily with a view to matching characteristics and withstanding power. When the high-power rf switch 700 operates normally in a single direction, the output end does not need to bear large power, and therefore the design of the second matching load 706 mainly considers the matching characteristic.
According to some embodiments of the present application, a schematic diagram of a high power radio frequency switch comprising a parallel unit with transistors and high resistance devices is disclosed. Fig. 8 is a schematic diagram of the high power radio frequency switch.
Specifically, as shown in fig. 8, the high power rf switch 800 includes a first 3dB coupler 701, a second 3dB coupler 702, a first parallel unit 803, a second parallel unit 804, a first matched load 705, and a second matched load 706.
Each of the first parallel unit 803 and the second parallel unit 804 includes one transistor M1 and one high-resistance device Zg.
A first electrode of the transistor M1 is connected to one end of the high-resistance device Zg, a second electrode of the transistor M1 is connected to one end of the parallel unit, and a third electrode of the transistor M1 is connected to the other end of the parallel unit, and thus is grounded.
One end of the high-resistance device Zg is connected to the first electrode of the transistor M1, and the other end of the high-resistance device Zg is connected to the control port of the parallel unit, thereby being controlled by the control signal VC.
In some embodiments, the high resistance device may include a resistor, an inductor, or a combination of a resistor and an inductor.
In some embodiments, as shown in FIG. 8, the impedance of the high-resistance device Zg is generally much greater than the impedance of the parasitic capacitance between node ① and node ②, and the parasitic capacitance between node ② and node ③, such that the voltage magnitude at node ① is proportional to the voltage magnitude at node ②.
In some embodiments, the Transistor may be implemented by a Field Effect Transistor (FET), and specifically includes a Junction Field-Effect Transistor (JFET), a High Electron Mobility Transistor (HEMT), a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), and the like.
In some embodiments, the transistors are implemented using N-type Field Effect transistors (NMOS FETs) or P-type Field Effect transistors (PMOS FETs).
In some embodiments, as shown in fig. 8, the transistor M1 may be an NMOS transistor, and the first electrode of the transistor M1 may be a gate, the second electrode of the transistor M1 may be a drain, and the third electrode of the transistor M1 may be a source.
In addition, it is understood that in other embodiments, the transistor M1 may be implemented by other transistors, and is not limited herein.
According to some embodiments of the present application, a schematic diagram of a high power radio frequency switch comprising a parallel unit with series transistors is disclosed. Fig. 9 is a schematic diagram of the high power radio frequency switch.
Specifically, as shown in fig. 9, the high power rf switch 900 includes a first 3dB coupler 701, a second 3dB coupler 702, a first parallel unit 903, a second parallel unit 904, a first matched load 705, and a second matched load 706.
Each of the first parallel unit 903 and the second parallel unit 904 includes a plurality of transistors M1,1-M1, n and a plurality of high-resistance devices Zg,1-Zg, n.
A plurality of transistors M1,1-M1, n are connected in series, each having a first electrode connected to one end of a high impedance device, the second electrode of a first transistor M1,1 being connected to one end of the parallel unit, the third electrode of the first transistor M1,1 being connected to the second electrode of a second transistor M1,2, the third electrode of the second transistor M1,2 being connected to the second electrode of a third transistor M1,3, and so on, and the third electrode of the last transistor M1, n being connected to the other end of the parallel unit and thus to ground.
One end of each high-resistance device is connected with the first electrode of one transistor, and the other ends of the plurality of high-resistance devices Zg,1-Zg, n are connected with each other and with the control port of the parallel unit, so as to be controlled by a control signal VC in common.
For example, if the maximum voltage that can be borne by the physical damage of a single transistor is Vmax, then after n transistors are connected in series, the maximum voltage that can be borne by the physical damage under ideal conditions is increased to n × Vmax, so the maximum power that can be borne by the high power RF switch 900 is also increased by n2And (4) doubling.
According to some embodiments of the present application, a schematic diagram of a high power radio frequency switch including a parallel cell with parallel transistors is disclosed. Fig. 10 is a schematic diagram of the high power radio frequency switch.
Specifically, as shown in fig. 10, the high power rf switch 1000 includes a first 3dB coupler 701, a second 3dB coupler 702, a first parallel unit 1003, a second parallel unit 1004, a first matched load 705, and a second matched load 706.
Each of the first parallel unit 1003 and the second parallel unit 1004 includes a plurality of transistors M1,1-M1, n and a plurality of high-resistance devices Zg,1-Zg, n.
A plurality of transistors M1,1-M1, n are connected in parallel, a first electrode of each transistor being connected to one terminal of a high resistance device, a second electrode of each transistor being connected to one terminal of the parallel cell, and a third electrode of each transistor being connected to the other terminal of the parallel cell and thus to ground.
One end of each high-resistance device is connected with the first electrode of one transistor, and the other ends of the plurality of high-resistance devices Zg,1-Zg, n are connected with each other and with the control port of the parallel unit, so as to be controlled by a control signal VC in common.
The utility model discloses a parallelly connected unit with parallelly connected transistor has improved high power radio frequency switch 1000's bandwidth to the isolation between two radio frequency ports has further been improved. The transistors are connected in parallel, some inductors or transmission lines are added for matching, and when the parallel connection unit is disconnected, the parasitic capacitance of the single transistor can be distributed in the transistors, so that the distributed matching is easy to realize, and the bandwidth is improved. When the parallel unit is conducted, each transistor is equivalent to a small resistor connected to the ground in parallel, the radio-frequency signal is connected to the ground through the resistor, and the isolation between the two radio-frequency ports can be further improved through reasonable design.
According to some embodiments of the present application, a schematic diagram of a high power radio frequency switch including a parallel unit with a parallel set of transistors is disclosed. Fig. 11 is a schematic diagram of the high power radio frequency switch.
Specifically, as shown in fig. 11, the high power rf switch 1100 includes a first 3dB coupler 701, a second 3dB coupler 702, a first parallel unit 1103, a second parallel unit 1104, a first matched load 705, and a second matched load 706.
Each of the first and second parallel units 1103 and 1104 includes a plurality of transistor sets and a plurality of high-resistance devices Zg,11-Zg, ij.
A plurality of transistor sets connected in parallel, each transistor set comprising a plurality of transistors M1,1-M1, j; …, respectively; mi,1-Mi, j, a plurality of transistors M1,1-M1, j; …, respectively; mi,1-Mi, j are connected in series, the first electrode of each transistor is connected to one end of a high impedance device, the second electrode of the first transistor M1,1-Mi,1 is connected to one end of the parallel unit, the third electrode of the first transistor M1,1-Mi,1 is connected to the second electrode of the second transistor M1,2-Mi,2, the third electrode of the second transistor M1,2-Mi,2 is connected to the second electrode of the third transistor M1,3-Mi,3, and so on, and the third electrode of the last transistor M1, j-Mi, j is connected to the other end of the parallel unit, and thus to ground.
One end of each high-resistance device is connected with the first electrode of one transistor, and the other ends of the plurality of high-resistance devices Zg,11-Zg, ij are connected with each other and with the control port of the parallel unit so as to be controlled by a control signal VC in common.
The utility model discloses a parallel unit with parallelly connected transistor set can have the above-mentioned advantage of series connection transistor and parallelly connected transistor simultaneously.
The embodiments of the present invention have been described in detail with reference to the drawings, but the present invention is not limited to the above embodiments, and various changes made without departing from the spirit and scope of the present invention should be construed as falling within the scope of the present invention.
In the drawings, some features of the structures or methods may be shown in a particular arrangement and/or order. However, it is to be understood that such specific arrangement and/or ordering may not be required. Rather, in some embodiments, the features may be arranged in a manner and/or order different from that shown in the illustrative figures. In addition, the inclusion of a structural or methodical feature in a particular figure is not meant to imply that such feature is required in all embodiments, and in some embodiments, may not be included or may be combined with other features.
It is noted that, in the examples and descriptions of the present invention, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the use of the verb "comprise a" to define an element does not exclude the presence of another, same element in a process, method, article, or apparatus that comprises the element.
While the present application has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present application.
Claims (10)
1. A radio frequency anti-burnout protection circuit is characterized by comprising a first 3dB coupler, a second 3dB coupler, a first parallel unit, a second parallel unit, a first matching load, a second matching load, a first radio frequency circuit and a second radio frequency circuit;
the input end of the first 3dB coupler is connected with a radio frequency input port, the coupling end of the first 3dB coupler is respectively connected with one end of the first parallel unit and the input end of the first radio frequency circuit, the through end of the first 3dB coupler is respectively connected with one end of the second parallel unit and the input end of the second radio frequency circuit, and the isolation end of the first 3dB coupler is connected with one end of the first matched load;
the input end of the second 3dB coupler is connected with a radio frequency output port, the coupling end of the second 3dB coupler is connected with the output end of the second radio frequency circuit, the through end of the second 3dB coupler is connected with the output end of the first radio frequency circuit, and the isolation end of the second 3dB coupler is connected with one end of the second matched load;
the other ends of the first parallel unit and the second parallel unit are respectively grounded, and control ports of the first parallel unit and the second parallel unit are respectively connected with a control signal;
the other ends of the first matched load and the second matched load are respectively grounded.
2. The radio frequency anti-burn protection circuit according to claim 1, wherein each of the first parallel unit and the second parallel unit comprises a transistor and a high impedance device; a first electrode of the transistor is connected with one end of the high-resistance device; and the other end of the high-resistance device is connected with the control port of the parallel unit.
3. The radio frequency burn-in resistant protection circuit of claim 1, wherein each of the first 3dB coupler and the second 3dB coupler comprises a lange coupler or a hybrid 3dB coupler.
4. A radio frequency anti-burn out protection circuit according to any of claims 1 to 3, wherein the radio frequency anti-burn out protection circuit is monolithically integrated using RFCMOS, GaAs, BiCMOS, RF SOI processes.
5. A radio frequency anti-burn out protection circuit according to any one of claims 1 to 3, wherein discrete devices are used to build up the radio frequency anti-burn out protection circuit.
6. A high-power radio frequency switch is characterized by comprising a first 3dB coupler, a second 3dB coupler, a first parallel unit, a second parallel unit, a first matched load and a second matched load;
the input end of the first 3dB coupler is connected with a first radio frequency port, the coupling end of the first 3dB coupler is respectively connected with one end of the first parallel unit and the through end of the second 3dB coupler, the through end of the first 3dB coupler is respectively connected with one end of the second parallel unit and the coupling end of the second 3dB coupler, and the isolation end of the first 3dB coupler is connected with one end of the first matched load;
the input end of the second 3dB coupler is connected with a second radio frequency port, the coupling end of the second 3dB coupler is respectively connected with one end of the second parallel unit and the through end of the first 3dB coupler, the through end of the second 3dB coupler is respectively connected with one end of the first parallel unit and the coupling end of the first 3dB coupler, and the isolation end of the second 3dB coupler is connected with one end of the second matched load;
the other ends of the first parallel unit and the second parallel unit are respectively grounded, and control ports of the first parallel unit and the second parallel unit are respectively connected with a control signal;
the other ends of the first matched load and the second matched load are respectively grounded.
7. The high power radio frequency switch according to claim 6, wherein each of the first parallel unit and the second parallel unit comprises one transistor and one high impedance device; a first electrode of the transistor is connected with one end of the high-resistance device; and the other end of the high-resistance device is connected with the control port of the parallel unit.
8. The high power radio frequency switch of claim 6, wherein each of the first 3dB coupler and the second 3dB coupler comprises a Lange coupler or a hybrid 3dB coupler.
9. The high power radio frequency switch according to any of claims 6 to 8, characterized in that the high power radio frequency switch is monolithically integrated using RF CMOS, GaAs, BiCMOS, RF SOI processes.
10. The high power radio frequency switch according to any of claims 6 to 8, wherein the high power radio frequency switch is built using discrete devices.
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| CN202020310339.2U CN211089624U (en) | 2020-03-13 | 2020-03-13 | Radio frequency anti-burning protection circuit and high-power radio frequency switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112202443A (en) * | 2020-09-25 | 2021-01-08 | 武汉中科医疗科技工业技术研究院有限公司 | Radio frequency switch device and radio frequency switch system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112202443A (en) * | 2020-09-25 | 2021-01-08 | 武汉中科医疗科技工业技术研究院有限公司 | Radio frequency switch device and radio frequency switch system |
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