CN211010831U - L ED bulb lamp - Google Patents

Abstract

An L ED bulb lamp comprises a lamp shell, a lamp holder connected with the lamp shell, a stem, two conductive supports arranged in the lamp shell and connected with the stem, and at least one L ED filament, wherein the stem comprises the bottom of the stem and the top of the stem, the bottom of the stem is connected with the lamp holder, the top of the stem extends to the inside of the lamp shell along the extending direction of the stem, the L ED filament comprises a filament body and two electrodes, the two electrodes are located at the two opposite ends of the filament body and are respectively connected with the conductive supports, the filament body comprises a light conversion layer and a L ED chip, the light conversion layer comprises a top layer and a base layer opposite to the top layer, the base layer is provided with an upper surface and a lower surface opposite to the upper surface, the upper surface is used for placing the L ED chip, the upper surface comprises a first area and a second area, the second area comprises foam holes, and the surface roughness of the first area is smaller than that of the second area.

Description

L ED bulb lamp

The utility model discloses the application is that the branch's case application of chinese patent office, application number 201822198239.0, new name "L ED filament and L ED ball bubble lamp" is submitted to 26 of 12 months in 2018.

Technical Field

The invention relates to the field of lighting, in particular to an L ED filament and a L ED bulb lamp using the same.

Background

For decades, incandescent bulbs have been widely used for home or commercial lighting, however, incandescent bulbs are generally less efficient in energy usage, with approximately 90% of the energy input going to be dissipated as heat, and because of the very limited life of incandescent bulbs (about 1,000 hours), they need to be replaced frequently.

L ED bulb lamps with L ED filaments have been marketed in recent years L ED bulb lamps currently marketed with L ED filaments as the light emitting source still have the following problems to be improved:

in addition, the soft filament made by the FPC has the defects that the thermal expansion coefficient of the FPC is different from that of silica gel wrapping the filament, so that the L ED chip is displaced and even degummed after long-term use, or the FPC is not beneficial to flexibly changing the manufacturing conditions, and the like, the filament structure challenges the stability of metal routing among the chips when bent, when the arrangement of the chips in the filament is compact, if adjacent L ED chips are connected in a metal routing mode, stress is easily over concentrated on a specific part of the filament when the filament is bent, so that the metal routing for connecting ED 2 chips is damaged and even broken,

the patent publication No. CN202252991U discloses that the upper and lower surfaces of a chip or the periphery of the chip are respectively coated with fluorescent powder, the chip is fixed on a flexible PCB and is connected and packaged through insulating glue, the insulating glue is epoxy resin glue, electrodes of the chip are connected with a circuit on the flexible PCB through gold wires, the flexible PCB is transparent or semitransparent, the flexible PCB is manufactured by printing a circuit on a polyimide or polyester film substrate, the flexible PCB replaces an aluminum substrate support lamp heat dissipation component, the heat dissipation is improved, the patent publication No. CN105161608A discloses a L ED filament luminous strip and a preparation method thereof, the LED luminous strip adopts non-overlapping surfaces between luminous surfaces of the chip and is correspondingly arranged, the light emitting uniformity is improved, the heat dissipation is improved, the patent publication No. CN103939758A discloses that a transparent heat conduction heat dissipation layer is formed between a bearing surface of a carrier and an L ED chip and is used for carrying out heat exchange with the 8655 ED chip, the PCB, the chip is adjusted to be arranged or form a heat dissipation layer, the LED luminous strip can improve the heat dissipation performance to a certain extent, but the heat dissipation is easy to accumulate due to the heat dissipation of the LED chip, the filament is not easy to accumulate, the LED chip is not easy to accumulate, the CN204289439U, the LED chip is arranged on a glass substrate, the LED chip is formed by combining with a glass substrate, the LED chip is formed by using at least one LED substrate, the LED substrate is formed by using a glass substrate, the LED substrate is further, the LED substrate is used for bonding strength of a bonding wire bonding resin, the LED substrate is improved by using the LED substrate, the LED substrate is improved by bonding strength of the LED substrate, the LED substrate is improved by bonding resin, the LED.

Disclosure of Invention

It is specifically noted that the present disclosure may actually encompass one or more inventive aspects that may or may not have been presently claimed, and that several of the inventive aspects that may be present herein may be collectively referred to as "the invention" during the course of writing the description to avoid obscuring the unnecessary distinction between such possible inventive aspects.

The term "present invention" is used merely to describe some embodiments disclosed in this specification (whether or not in the claims), rather than a complete description of all possible embodiments.

According to another embodiment of the invention, an L ED bulb lamp is disclosed, wherein the bulb lamp comprises:

a lamp housing;

the lamp holder is connected with the lamp shell;

the core column comprises a core column bottom and a core column top which are opposite, the core column bottom is connected with the lamp cap, and the core column top extends to the inside of the lamp shell along the extension direction of the core column;

the two conductive brackets are arranged in the lamp shell and connected with the core column;

at least one L ED filament, the L ED filament includes a filament body and two electrodes, the two electrodes are located on the

The filament body comprises a light conversion layer and L ED chips, the light conversion layer comprises a top layer and a base layer opposite to the top layer, the base layer is provided with an upper surface and a lower surface opposite to the upper surface, the upper surface is used for placing the L ED chips, the upper surface comprises a first area and a second area, the second area comprises foam pores, and the surface roughness of the first area is smaller than that of the second area;

and the cantilever is connected with the core column and the filament body.

Optionally, the lower surface includes a third region, and the surface roughness of the third region is greater than the surface roughness of the first region.

Optionally, the L ED filament body includes a main light emitting surface and a secondary light emitting surface, and any section of the main light emitting surface faces the lamp housing or the lamp holder at any angle.

Optionally, any section of the secondary light emitting surface faces the stem or the top of the stem at any angle.

Optionally, four quadrants are defined in a top view of the L ED bulb lamp, the origins of the four quadrants are located on the stem, the L ED filament presents a brightness in a first quadrant in the top view, symmetrical to the brightness of the L ED filament in a second, third or fourth quadrant in the top view.

Optionally, the L ED filament has a light-emitting direction in a portion located in the first quadrant in the top view, and is symmetrical to the light-emitting direction in a portion located in the second, third or fourth quadrant in the top view of the L ED filament.

Optionally, the configuration of the L ED chips of the L ED filament in a portion of the first quadrant in a top view is symmetrical to the configuration of the L ED chips of the L ED filament in a portion of the second, third, or fourth quadrant in a top view.

Optionally, the power arrangement of the L ED chips with different powers of the L ED filament in the first quadrant of the top view is symmetrical to the power arrangement of the L ED chips with different powers of the L ED filament in the second, third or fourth quadrant of the top view.

Optionally, the L ED filament region is divided into segments and the segments are defined by refractive indices that are distinct from each other, the L ED filament has a refractive index that is symmetric to the refractive index of the segments of the L ED filament in the top view on the second, third or fourth quadrant of the lamp.

The invention adopts the technical scheme, at least one of the following beneficial effects or any combination of the following beneficial effects can be achieved, (1) the filament can be bent and lightened, the falling probability of a lead is reduced, and the reliability of a product is improved, (2) the L ED filament structure is divided into a L ED section and a conductor section, so that the L ED filament easily concentrates stress on the conductor section when bent, and the probability of breakage of a gold wire connecting adjacent chips in the L ED section is reduced when bent, so that the integral quality of the L ED filament is improved, in addition, the conductor section adopts a copper foil structure, the length of a metal wire bonding is reduced, and the probability of breakage of the metal wire bonding of the conductor section is further reduced, (3) (the material) organic silicon modified polyimide is used as a main body, the organic silicon modified polyimide resin composition obtained after adding a thermal curing agent has excellent heat resistance, mechanical strength and light transmittance, the organic silicon modified polyimide resin composition is used as a base material, has good flexibility, and presents various shapes, and the 360-degree full-cycle light illuminating lamp L ED lamp comprises a single bulb, and the LED filament is beneficial to generate a symmetrical light bulb with homogeneous light distribution characteristic, and the LED lamp filament 678663 can generate light with uniform light distribution.

Drawings

FIG. 1A is a schematic structural view of another embodiment of a segmented L ED filament of the present invention;

FIGS. 1B-1G are schematic structural views of various embodiments of the segmented L ED filament of the present invention;

FIG. 1H is a schematic perspective view of another embodiment of a segmented L ED filament of the present invention;

FIG. 2 is a TMA analysis of polyimide before and after addition of a thermal curing agent;

FIG. 3 is a graph showing a distribution of sizes of heat dissipating particles of different specifications;

FIG. 4A is a SEM image of a composite film of the silicone modified polyimide resin composition of the present invention;

FIGS. 4B and 4C are schematic cross-sectional views showing examples of composite films of silicone-modified polyimide resin compositions according to the present invention;

fig. 5A is a schematic diagram of another L ED bulb lamp using L ED filaments of the present invention;

FIG. 5B shows a front view of the L ED bulb lamp of FIG. 5A;

FIG. 5C shows a top view of the L ED bulb lamp of FIG. 5A;

FIG. 5D is the L ED filament of FIG. 5B as it would appear in a two-dimensional coordinate system defined by four quadrants;

FIG. 5E is the L ED filament of FIG. 5C as it would appear in a two-dimensional coordinate system defined by four quadrants;

fig. 6A to 6D are schematic, side, another side and top views, respectively, of an L ED bulb lamp according to an embodiment of the invention;

Detailed Description

The following description of various embodiments of the invention presented herein is for the purpose of illustration and example only, and is not intended to be exhaustive or limited to the precise form disclosed.

In the drawings, the size and relative sizes of components may be exaggerated for clarity. Like reference numerals refer to like elements throughout the drawings.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and/or the present application and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

L ED chip units 402 and 404, or L ED segments 402 and 404, may be a single L ED chip, two L ED chips, or multiple L ED chips, i.e., equal to or larger than three L ED chips.

Referring to fig. 1A to 1F, fig. 1A is a schematic structural view of another embodiment of the segmented L ED filament of the present invention, the light conversion layer 420 of the segmented L ED filament 400 shown in fig. 1A to 1F is divided into two layers, as shown in fig. 1A, the L ED filament 400 has a light conversion layer 420, L ED segments 402,404, electrodes 410,412, and a conductor segment 430 for electrically connecting two adjacent L ED segments 402,404, the L ED segments 402,404 include at least two L ED chips 442, L ED chips electrically connected to each other by wires 440, in this embodiment, the conductor segment 430 includes a conductor 430a connecting L ED segments 402,404, wherein the shortest distance between two L ED chips L located in two adjacent L ED segments 402,404 is greater than the distance between two adjacent chips in 402/404, the conductor 430a is less than the length of the conductor 430a, the length of the wire 440, the conductor 430a is greater than the distance between two adjacent chips, when the top conductor segment 402 a and/or the top conductor segment 402 a is exposed in the radial direction, the top layer 420a, the top layer 420b, and/or the top layer 400 is not exposed as a radial stress or the top layer 400, the top layer 420b, the top layer 420, the top layer 400, the top layer 420, or the top layer 400, the top layer 420, which is exposed, the top layer 420b, which is exposed, the top layer 420b, the top layer 420, the top layer 400, which is not exposed, or the top layer 420, the top layer 420b, which is exposed, the top layer 420, which is the top layer 400, which is exposed, which is the top layer 400, the top layer 420, which is the top layer 420, the top.

For example, in the case where the primary light emitting surface of L ED chip 442 faces the top layer 420a, the base layer 420b can be added with more light scattering particles to increase the light scattering of the base layer 420b and maximize the brightness of the base layer 420b, even approaching the brightness of the top layer 420 a. in addition, the base layer 420b can also have phosphor with higher density to increase the hardness of the base layer 420 b. in the manufacturing process flow of L ED filament 400, the base layer 420b can be prepared first, then L ED chip 442, conductive wire 440 and conductor 430a can be disposed on the base layer 420 b. since the base layer 420b has the hardness that can satisfy the hardness of the following L ED chip and conductive wire, L ED chip 442, conductive wire 440 and conductor 430a can be disposed more stably without sagging or skewing, finally, the base layer 420b, L ED chip 442, conductive wire 440 and conductor 430a are covered with the top layer 420 a.

As shown in fig. 1B, conductor segment 430 is also located between two adjacent L ED segments 402,404, and a plurality of L ED chips 442 in L ED segments 402,404 are electrically connected to each other by wires 440 in this embodiment, however, conductor 430a in conductor segment 430 of fig. 1B is not in the form of a wire, but rather in the form of a sheet or film, in some embodiments, conductor 430a may be a copper foil, gold foil, or other electrically conductive material, in this embodiment, conductor 430a is attached to the surface of base layer 420B and adjacent to top layer 420a, i.e., between base layer 420B and top layer 420a, and conductor segments 430 and L ED segments 402,404 are electrically connected by wires 450, i.e., two L ED chips 442 located within two adjacent 64 ED segments 402,404 and the shortest distance from conductor segment 430 are electrically connected to conductor 430a in conductor segment 430 by wires 450, wherein the length of conductor 430 is greater than the length of two adjacent 64 ED segments 402,404 in L, and the shortest distance from conductor segment 430, and the radial direction of conductor segment 860.864. this ensures good radial stability of wire bonding strength of the product when wire bonding process is performed, i.h.h.h.h.h.7.

In the present embodiment, both L ED sections 402,404 and conductor sections 430 of the L ED filament have different structural features as shown in fig. 1C, L ED sections 402,404 and conductor sections 430 have different widths, thicknesses or diameters in the radial direction of the L ED filament, as shown in fig. 1C, conductor section 430 is thinner than L ED sections 402,404, and when L ED filament is bent, conductor section 430 serves as a main bent portion, and thinner conductor section 430 helps to be bent into various curves, as shown in fig. 1C, in the present embodiment, conductor section 420b has different widths, thicknesses or diameters in the radial direction of L ED filament regardless of 894 ED sections 402,404, or conductor section 430, and top layer 420a has different widths, thicknesses or diameters in the radial direction of L ED section 402,404 and conductor section 430 in L ED section 402,404, and conductor section 430, which has a different widths, thicknesses or diameters in the radial direction of L ED filament 638 ED filament, as shown in fig. 1C, the top layer sections 402,404 a and 404 a have a larger diameters in the radial direction of the conductor section 638 ED filament, and the top layer 420a gradually increases from the radial direction of the conductor section 638 ED filament, so that the conductor section 402, 420a gradually increases from the top layer 638 ED filament, and the top layer 420a along the axial direction of filament, and the top conductor section 638 ED filament, and the top conductor section 420a, which is gradually decreases from the top conductor section 638 ED filament, and the top conductor section 420 a.

As shown in fig. 1D, in this embodiment, the top layer 420a of the L ED segments 402 and 404 has the largest diameter (or the largest thickness) in the radial direction of the L ED filament, the diameter of the top layer 420a is gradually reduced from the L ED segments 402 and 404 to the conductor segment 430, and a portion (e.g., the middle portion) of the conductor 430a is not covered by the top layer 420 a. the base layer 420b, whether in the L ED segments 402 and 404 or in the conductor segment 430, has the same width, thickness or diameter in the radial direction of the L ED filament, in this embodiment, the number of the L ED chips 442 in each L ED segment 402 and 404 may be different, for example, there is only one L ED chip 442 in one L ED segment 402 and 404, and there are two or more L ED chips 442 in one L ED segment 402 and 404. each L ED segment 402 and 402 may be designed to have different numbers of the ED chips 442, and L.

As shown in fig. 1E, in the present embodiment, the conductor 430a is, for example, a conductive metal sheet or a conductive metal strip, the conductor 430a has a thickness Tc, which is significantly larger than that of the L ED core sheet 442 due to the fact that the L ED core sheet 442 is thinner than the conductor 430a, and in addition, the thickness Tc of the conductor 430a is closer to that of the top layer 420a in the conductor segment 430 (the thickness of the top layer 420a in the conductor segment 430 can refer to the diameter D1 of the top layer 420a in the radial direction), Tc (0.7-0.9) D1, preferably Tc (0.7-0.8) D1) with respect to that of the L ED core sheet 442, and the thicknesses of the top layer 420a in the conductor segment 430 and the segments 402 and 404 in L (the thicknesses of the top layer 420a in the L ED segments 402 and 404 can refer to the diameter D2 of the top layer 420a in the radial direction) are consistent in the present embodiment.

As shown in fig. 1F, in the present embodiment, the thickness Tc of the conductor 430a is also significantly greater than that of the L ED chip 442, and the thickness Tc of the conductor 430a is closer to the thickness (diameter D1) of the top layer 420a at the conductor segment 430 than that of the L ED chip 442. in the present embodiment, the thickness of the top layer 420a at the conductor segments 430 and L ED segments 402,404 is not uniform. as shown in fig. 1F, the top layer 420a of the L ED segments 402,404 has the smallest diameter D2 in the radial direction of the L ED filament, while the top layer 420a of the conductor segment 430 has the largest diameter D1 in the radial direction of the L ED filament, D1 is greater than the diameter of the D2. top layer 420a, which gradually increases from the L ED segments 402,404 to the conductor segment 430, and gradually decreases from the conductor segments 430 to the L ED segments 402,404, so that the top layer 420a forms a smooth concave-convex curve along the axial direction of the L ED filament.

As shown in fig. 1G, in the present embodiment, the thickness Tc of the conductor 430a is also significantly larger than that of the L ED chip 442, however, the top layer 420a of the L ED segments 402,404 has the largest diameter in the radial direction of the L ED filament, the diameter of the top layer 420a is gradually reduced from L ED segments 402,404 to the conductor segment 430, and a portion (e.g., the middle portion) of the conductor 430a is not covered by the top layer 420 a.

As shown in fig. 1H, in the present embodiment, the thickness of the conductor 430a is also significantly greater than that of the L ED chip 442, and the thickness of the conductor 430a is closer to that of the top layer 420a on the conductor segment 430 than that of the L ED chip 442, in the width direction of the L ED filament (the width direction is perpendicular to the axial direction and the thickness direction), the top layer 420a has a width W1, and the L ED chip 442 has a width W2, and the width W2 of the L ED chip 442 is closer to the width W1 of the top layer 420a, that is, the top layer 420a is slightly greater than the L ED chip 442 in the width direction, and is slightly greater than the conductor 430a in the thickness direction, in other embodiments, the width W2 of the top layer 420a is 2: 5:1 of the top layer 420a, in the present embodiment, the base layer 420b and the top layer 420a have the same width W1, but not limited thereto, in addition, as shown in fig. 1H, in the present embodiment, the conductor 430a further includes a plurality of conductor segments 430a, which are arranged in a wave-like arrangement, and the axial direction, the top layer 432a is arranged in a wave-like arrangement, and the axial direction, the multi-wave-like arrangement, and the top-like arrangement of the conductor segment structure 432a is arranged along the axial direction, the central recessed structure is also can be arranged in which is arranged along the wave-like arrangement.

As shown in fig. 1H, the wavy concave or convex structures 432a are wavy in the Y direction, but are linear in the axial direction of the L ED filament (in top view, the wavy concave or convex structures 432a are straight lines arranged along the axial direction of the L ED filament), or the connecting line of the lowest points of the concave structures 432a in the Y direction or the connecting line of the highest points of the convex structures 432a in the Y direction is straight line.

According to the embodiments of the present invention, since the L ED filament structure is divided into the L ED segment and the conductor segment, the L ED filament easily concentrates stress on the conductor segment when being bent, so that the gold wires connecting the adjacent chips in the L ED segment are less likely to break when being bent, thereby improving the overall quality of the L ED filament.

The present invention provides a filament substrate or a light conversion layer formed from a composition comprising a silicone-modified polyimide, which can satisfy the above-mentioned properties, and can also satisfy the special requirements by adjusting the types and contents of the main material, the modifier and the additive in a specific or partial composition, in addition to the above-mentioned properties.

Blending mode of organic silicon modified polyimide

The organic silicon modified polyimide provided by the invention comprises a repeating unit represented by the following general formula (I):

in the general formula (I), Ar¹Is a 4-valent organic group. The organic group may have a benzene ring or an alicyclic hydrocarbon structure, and the alicyclic hydrocarbon structure may be a monocyclic alicyclic hydrocarbon structure or an alicyclic hydrocarbon structure having a bridged ring. The organic group may be a benzene ring structure or an alicyclic hydrocarbon structure containing an active hydrogen functional group, and the active hydrogen functional group may be any one or more of a hydroxyl group, an amino group, a carboxyl group, an amide group, or a thiol group.

Ar²Is a 2-valent organic group, and the organic group can have an alicyclic hydrocarbon structure of a monocyclic system, or a 2-valent organic group containing an active hydrogen functional group, wherein the active hydrogen functional group is any one or more of a hydroxyl group, an amino group, a carboxyl group, an amide group or a thiol group.

Each R is independently selected from methyl or phenyl.

n is 1-5, preferably n is 1 or 2 or 3 or 5.

The number average molecular weight of the general formula (I) is 5000 to 100000, preferably 10000 to 60000, and more preferably 20000 to 40000. The number average molecular weight is a polystyrene conversion value based on a calibration curve prepared by a Gel Permeation Chromatography (GPC) apparatus using standard polystyrene. When the number average molecular weight is 5000 or less, it is difficult to obtain good mechanical properties after curing, and particularly, the elongation tends to decrease. On the other hand, when it exceeds 100000, the viscosity becomes too high, making the resin difficult to form.

Ar¹Is a component derived from a dianhydride comprising an aromatic acid anhydride and an aliphatic acid anhydride, and the aromatic acid anhydride includes an aromatic acid anhydride containing only a benzene ring, a fluorinated aromatic acid anhydride, an amide group-containing aromatic acid anhydride, an ester group-containing aromatic acid anhydride, an ether group-containing aromatic acid anhydride, a sulfur group-containing aromatic acid anhydride, a sulfone group-containing aromatic acid anhydride, a carbonyl group-containing aromatic acid anhydride, and the like.

Examples of the aromatic acid anhydride containing only a benzene ring include pyromellitic anhydride (PMDA), 2,3,3',4' -biphenyltetracarboxylic dianhydride (bpda), 3,3',4,4' -biphenyltetracarboxylic dianhydride (sBPDA), 4- (2, 5-dioxotetrahydrofuran-3-yl) -1,2,3, 4-tetrahydronaphthalene-1, 2-dicarboxylic anhydride (TDA), and the like; fluorinated aromatic anhydrides such as 6FDA 4,4' - (hexafluoroisopropylene) diphthalic anhydride; aromatic acid anhydrides containing an amide group include N, N ' - (5,5' - (perfluoropropyl-2, 2-diyl) bis (2-hydroxy-5, 1-phenylene)) bis (1, 3-dioxo-1, 3-dihydroisobenzofuran) -5-carboxamide) (6FAP-ATA), N ' - (9H-fluoren-9-ylidene-di-4, 1-phenylene) bis [1, 3-dihydro-1, 3-dioxo-5-isobenzofurancarboxamide ] (FDA-ATA), and the like; the aromatic acid anhydride containing an ester group includes p-phenyl bis (trimellitate) dianhydride (TAHQ), etc.; the aromatic acid anhydride containing an ether group includes 4,4' - (4,4' -isopropyldiphenoxy) bis (phthalic anhydride) (BPADA), 4' -oxydiphthalic anhydride (sODPA), 2,3,3',4' -diphenylether tetracarboxylic dianhydride (aODPA), 4' - (4,4' -isopropyldiphenoxy) bis (phthalic anhydride) (BPADA), etc.; the sulfur-group-containing aromatic acid anhydride includes 4,4' -bis (phthalic anhydride) sulfide (TPDA), etc.; sulfone group-containing aromatic acid anhydrides include 3,3',4,4' -diphenylsulfone tetracarboxylic acid dianhydride (DSDA) and the like; the carbonyl group-containing aromatic acid anhydride includes 3,3',4,4' -benzophenonetetracarboxylic dianhydride (BTDA) and the like.

Alicyclic acid anhydrides include 1,2,4, 5-cyclohexane tetracarboxylic dianhydride abbreviated as HPMDA, 1,2,3, 4-Butanetetracarboxylic Dianhydride (BDA), tetrahydro-1H-5, 9-methanopyrano [3,4-d ] oxanone-1, 3,6,8(4H) -Tetraone (TCA), hexahydro-4, 8-ethylene-1H, 3H-benzo [1, 2-C: 4,5-C' ] difuran-1, 3,5, 7-tetraone (BODA), cyclobutanetetracarboxylic dianhydride (CBDA), 1,2,3, 4-cyclopentanetetracarboxylic dianhydride (CpDA), etc., or an alicyclic acid anhydride having an olefin structure such as bicyclo [2.2.2] oct-7-ene-2, 3,5, 6-tetracarboxylic dianhydride (COeDA). If an acid anhydride having an ethynyl group such as 4,4' - (acetylene-1, 2-diyl) diphthalic anhydride (EBPA) is used, the mechanical strength of the light conversion layer can be further ensured by post-curing.

From the viewpoint of solubility, 4,4 '-oxydiphthalic anhydride (sODPA), 3',4,4 '-benzophenonetetracarboxylic dianhydride (BTDA), cyclobutanetetracarboxylic dianhydride (CBDA), and 4,4' - (hexafluoroisopropylidene) diphthalic anhydride (6FDA) are preferable. The above dianhydrides can be used singly or in combination of two or more.

Ar²And a component derived from a diamine which can be classified into an aromatic diamine and an aliphatic diamine, and the aromatic diamine includes an aromatic diamine containing only a benzene ring structure, a fluorinated aromatic diamine, an aromatic diamine containing an ester group, an aromatic diamine containing an ether group, an aromatic diamine containing an amide group, an aromatic diamine containing a carbonyl group, an aromatic diamine containing a hydroxyl group, an aromatic diamine containing a carboxyl group, an aromatic diamine containing a sulfone group, an aromatic diamine containing a sulfur group, and the like.

Aromatic diamines having only a benzene ring structure include m-phenylenediamine, p-phenylenediamine, 2, 4-diaminotoluene, 2, 6-diamino-3, 5-diethyltoluene, 4 '-diamino-3, 3' -dimethylbiphenyl, 9-bis (4-aminophenyl) Fluorene (FDA), 9-bis (4-amino-3-tolyl) fluorene, 2-bis (4-aminophenyl) propane, 2-bis (3-methyl-4-aminophenyl) propane, 4 '-diamino-2, 2' -dimethylbiphenyl (APB); fluorinated aromatic diamines including 2,2' -BIS (trifluoromethyl) diaminobiphenyl (TFMB), 2-BIS (4-aminophenyl) hexafluoropropane (6FDAM), 2-BIS [4- (4-aminophenoxy) phenyl ] Hexafluoropropane (HFBAPP), 2-BIS (3-amino-4-tolyl) hexafluoropropane and the like) (BIS-AF) and the like; the aromatic diamine containing an ester group includes [4- (4-aminobenzoyl) oxyphenyl ] -4-Aminobenzoate (ABHQ), di-p-aminophenyl terephthalate (BPTP), p-aminobenzoate (APAB), etc.; the aromatic diamine containing an ether group includes 2, 2-bis [4- (4-aminophenoxy) phenyl ] propane) (BAPP), 2 '-bis [4- (4-aminophenoxy phenyl) ] propane (ET-BDM), 2, 7-bis (4-aminophenoxy) -naphthalene (ET-2,7-Na), 1, 3-bis (3-aminophenoxy) benzene (TPE-M), 4' - [1, 4-phenylbis (oxy) ] bis [3- (trifluoromethyl) aniline ] (p-6FAPB), 3,4 '-diaminodiphenyl ether, 4' -diaminodiphenyl ether (ODA), 1, 3-bis (4-aminophenoxy) benzene (TPE-R), 1, 4-bis (4-aminophenoxy) benzene (TPE-Q), 4,4' -bis (4-aminophenoxy) biphenyl (BAPB), and the like; the aromatic diamine containing an amide group includes N, N ' -bis (4-aminophenyl) benzene-1, 4-dicarboxamide (BPTPA), 3,4' -diaminobenzanilide (m-APABA), 4' -Diaminobenzanilide (DABA), etc.; the aromatic diamine containing carbonyl group includes 4,4 '-diaminobenzophenone (4,4' -DABP), bis (4-amino-3-carboxyphenyl) methane (or referred to as 6,6 '-diamino-3, 3' -methylene dibenzoic acid), etc.; the hydroxyl group-containing aromatic diamine includes 3,3' -dihydroxybenzidine (HAB), 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (6FAP), etc.; the aromatic diamine containing carboxyl group includes 6,6 '-diamino-3, 3' -methylene dibenzoic acid (MBAA), 3, 5-diaminobenzoic acid (DBA), etc.; the sulfone group-containing aromatic diamine includes 3,3' -diaminodiphenyl sulfone (DDS), 4' -diaminodiphenyl sulfone, bis [4- (4-aminophenoxy) phenyl ] sulfone (BAPS) (or 4,4' -bis (4-aminophenoxy) diphenyl sulfone), 3' -diamino-4, 4' -dihydroxydiphenyl sulfone (ABPS); the sulfur group-containing aromatic diamine includes 4,4' -diaminodiphenyl sulfide.

The aliphatic diamine is a diamine having no aromatic structure (such as benzene ring), the alicyclic diamine includes monocyclic alicyclic diamine and linear aliphatic diamine, the linear aliphatic diamine includes silica-type diamine, linear alkyl diamine and linear aliphatic diamine having an ether group, the monocyclic alicyclic diamine includes 4,4' -diaminodicyclohexylmethane (PACM), 3, 3-dimethyl-4, 4-diaminodicyclohexylmethane (DMDC), the silica-type diamine (also called amino-modified silicone) includes α, omega- (3-aminopropyl) polysiloxane (KF8010), X22-161A, X22-161B, NH15D, 1, 3-bis (3-aminopropyl) -1,1,3, 3-tetramethyldisiloxane (PAME), etc., the linear alkyl diamine has 6-12 carbon atoms, preferably an unsubstituted linear alkyl diamine, and the linear aliphatic diamine having an ether group includes ethylene glycol di (3-aminopropyl) ether, etc.

The diamine can also be selected from diamine containing fluorenyl, wherein fluorenyl has huge free volume and rigid condensed ring structure, and can ensure that polyimide has good heat resistance, thermal oxidation stability, mechanical property, optical transparency and good solubility in organic solvent, and the diamine containing fluorenyl, such as 9, 9-bis (3, 5-difluoro-4-aminophenyl) fluorene, which can be obtained by the reaction of 9-fluorenone and 2, 6-dichloroaniline. The fluorinated diamine can also be 1, 4-bis (3 '-amino-5' -trifluoromethylphenoxy) biphenyl, the diamine is meta-substituted fluorine-containing diamine with a rigid biphenyl structure, the meta-substituted structure can block charge flow along the molecular chain direction, and the intermolecular conjugation effect is reduced, so that the absorption of visible light to light is reduced, and the diamine or anhydride with an asymmetric structure can improve the transparency of the organic silicon modified polyimide resin composition to a certain extent. The above diamines may be used alone or in combination of two or more.

Examples of the diamine having an active hydrogen include diamines having a hydroxyl group such as 3,3 '-diamino-4, 4' -dihydroxybiphenyl, 4 '-diamino-3, 3' -dihydroxy-1, 1 '-biphenyl (or referred to as 3,3' -dihydroxybiphenylamine) (HAB), 2-bis (3-amino-4-hydroxyphenyl) propane (BAP), 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane (6FAP), 1, 3-bis (3-hydroxy-4-aminophenoxy) benzene, 1, 4-bis (3-hydroxy-4-aminophenyl) benzene, 3 '-diamino-4, 4' -dihydroxydiphenyl sulfone (ABPS) can be exemplified, as the diamine having a carboxyl group, 3, 5-diaminobenzoic acid, bis (4-amino-3-carboxyphenyl) methane (otherwise known as 6,6 '-diamino-3, 3' -methylenedibenzoic acid), 3, 5-bis (4-aminophenoxy) benzoic acid, 1, 3-bis (4-amino-2-carboxyphenoxy) benzene are exemplified. Diamines having an amino group include, for example, 4' -Diaminobenzanilide (DABA), 2- (4-aminophenyl) -5-aminobenzimidazole, diethylenetriamine, 3,3' -diaminodipropylamine, triethylenetetramine, and N, N ' -bis (3-aminopropyl) ethylenediamine (or N, N-bis (3-aminopropyl) ethylethylamine). Diamines containing thiol groups, for example 3, 4-diaminobenzenethiol. The above diamines may be used alone or in combination of two or more.

The organic silicon modified polyimide can be synthesized by a known synthesis method. Dianhydrides and diamines can be produced by dissolving them in an organic solvent for imidization in the presence of a catalyst, examples of which include acetic anhydride/triethylamine type, valerolactone/pyridine type, etc., preferably, water generated by an azeotropic process in imidization, and removal of water is promoted by using a dehydrating agent such as toluene.

In other embodiments, a small portion of amic acid can be present in the main chain of the polyimide, for example, the ratio of amic acid to imide in the polyimide molecule is 1-3: 100, and there is an interaction force between amic acid and epoxy resin, so that the substrate has superior performance. In other embodiments, the substrate can also be obtained by adding solid materials (such as thermal curing agent, inorganic heat-dissipating particles and phosphor) in the state of polyamic acid. In addition, the alicyclic anhydride and the diamine can be directly heated and dehydrated to obtain the solubilized polyimide, and the solubilized polyimide is used as a glue material, has good light transmittance and is liquid, so that other solid substances (such as inorganic heat dissipation particles and fluorescent powder) can be more fully dispersed in the glue material.

In addition, in the reaction of the acid anhydride and the diamine, when the main chain of the acid anhydride contains carbon-carbon triple bonds, the bonding force of the carbon-carbon triple bonds can strengthen the molecular structure; or a diamine containing a vinyl siloxane structure.

The molar ratio of dianhydride to diamine is 1: 1. Wherein the molar fraction of the diamine containing active hydrogen functional groups in the whole diamine is 5-25%. The reaction temperature for synthesizing the polyimide is preferably 80-250 ℃, more preferably 100-200 ℃, and the reaction time can be adjusted according to the size of the batch, for example, the reaction time for obtaining 10-30 g of polyimide is 6-10 hours.

The silicone-modified polyimide can be classified into two types, i.e., fluorinated aromatic silicone-modified polyimide and aliphatic silicone-modified polyimide. The fluorinated aromatic silicone-modified polyimide is synthesized from a silicone-type diamine, an aromatic diamine having a fluorine (F) group (or referred to as an F-substituted aromatic diamine), and an aromatic dianhydride having a fluorine (F) group (or referred to as an F-substituted aromatic anhydride); the aliphatic organosilicon modified polyimide is synthesized by dianhydride, silicon-oxygen type diamine and at least one diamine (also called aliphatic diamine) without aromatic structures (such as benzene rings), or the diamine (one diamine is silicon-oxygen type diamine) and at least one dianhydride (also called aliphatic anhydride) without aromatic structures (such as benzene rings), the aliphatic organosilicon modified polyimide comprises semi-aliphatic organosilicon modified polyimide and full-aliphatic organosilicon modified polyimide, and the full-aliphatic organosilicon modified polyimide is synthesized by at least one aliphatic dianhydride, silicon-oxygen type diamine and at least one aliphatic diamine; at least one aliphatic dianhydride or aliphatic diamine is used in the raw materials for synthesizing the semi-aliphatic organic silicon modified polyimide. The raw materials required for synthesizing the organic silicon modified polyimide and the silicon oxygen content of the organic silicon modified polyimide have certain influence on the transmittance, the color change performance, the mechanical performance, the warping degree and the refractive index of the base material.

The silicone-modified polyimide of the present invention has a siloxane content of 20 to 75 wt%, preferably 30 to 70 wt%, a glass transition temperature of 150 ℃ or lower, and the glass transition temperature (Tg) is measured by using TMA-60 manufactured by shimadzu corporation, a thermal curing agent, and the test conditions are as follows: loading: 5 g; temperature rise rate: 10 ℃/min; measuring the atmosphere: a nitrogen atmosphere; nitrogen flow rate: 20 ml/min; measurement temperature range: -40 to 300 ℃. When the siloxane content is less than 20%, a film made of the silicone-modified polyimide resin composition may become very hard and brittle due to the filling of the phosphor and the thermally conductive filler, and also warp after drying and curing, resulting in low processability; in addition, the resistance to thermal discoloration is reduced; when the siloxane content is more than 75%, the film made of the silicone-modified polyimide resin composition becomes cloudy, the light transmittance decreases, and the tensile strength of the film decreases. The content of siloxane in the invention is the weight ratio of silicon-oxygen type diamine (the structural formula is shown as formula (A)) to organic silicon modified polyimide, and the weight of the organic silicon modified polyimide is the sum of the weight of diamine and dianhydride used for synthesizing the organic silicon modified polyimide minus the weight of water generated in the synthesis process.

R in the formula (A) is selected from methyl or phenyl; r is preferably methyl, and n is 1-5, preferably 1,2,3, 5.

The organic solvent required for synthesizing the silicone-modified polyimide may be one that can dissolve the silicone-modified polyimide and ensure affinity (wettability) with the phosphor or filler to be added, but a large amount of the solvent is not left in the product, and the solvent is generally used in an amount of 1mol when the number of moles of the solvent is equal to the number of moles of water formed from the diamine and the acid anhydride, for example, 1mol of water formed from 1mol of the diamine and 1mol of the acid anhydride. In addition, the boiling point of the selected organic solvent at normal atmospheric pressure is 80 ℃ or higher and less than 300 ℃, more preferably 120 ℃ or higher and less than 250 ℃. Since drying and curing at a low temperature are required after coating, if the temperature is lower than 120 ℃, during the implementation of the coating process, it may not be well coated because the drying speed is too fast. If the boiling temperature of the organic solvent is selected to be higher than 250 deg.C, drying at a low temperature may be delayed. Specifically, the organic solvent is an ether organic solvent, an ester organic solvent, dimethyl ether, a ketone organic solvent, an alcohol organic solvent, an aromatic hydrocarbon solvent or the like. The ether organic solvent comprises ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether and diethylene glycol butyl methyl ether; the ester organic solvent comprises acetate, the acetate comprises ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propyl acetate, propylene glycol diacetate and butyl acetate, and the ester solvent can also be methyl lactate, butyl lactate or ethyl benzoate; dimethyl ether solvents include triglyme or tetraglyme; the ketone solvent comprises acetylacetone, methyl propyl ketone, cyclopentanone, methyl butyl ketone, cyclopentanone, or 2-heptanone; the alcohol solvent comprises butanol, isobutanol, pentanol, 3-methyl-3-methoxybutanol or diacetone alcohol; the aromatic hydrocarbon solvent includes toluene or xylene; other solvents include gamma butyrolactone, N-methyl pyrrolidone or dimethyl sulfoxide.

The invention provides an organic silicon modified polyimide resin composition which comprises the organic silicon modified polyimide and a thermal curing agent, wherein the thermal curing agent is epoxy resin, isocyanate or a bisoxazoline compound. In one embodiment, the amount of the thermal curing agent is 5 to 12% of the weight of the silicone modified polyimide based on the weight of the silicone modified polyimide. The organic silicon modified polyimide resin composition can further comprise heat dissipation particles and fluorescent powder.

Light transmittance

The light transmittance refers to the transmittance of light near the main light-emitting wavelength band of a L ED chip, for example, near 450nm of a blue-light L ED chip, the absorption rate of the composition or polyimide to light near 450nm is low enough or even not absorbed to ensure that most or all of the light can pass through the composition or polyimide, furthermore, L ED chip emits light through the interface of the two substances, the closer the refractive indices of the two substances are, the higher the light extraction efficiency is, the closer the refractive index of the substance (for example, a solid crystal glue) in contact with the filament substrate (or base layer) is, the refractive index of the silicone modified polyimide composition is 1.4-1.7, preferably 1.4-1.55. the silicone modified polyimide resin composition is used for the filament substrate, the better the refractive index of the silicone modified polyimide resin composition is 1.4-1.7, preferably 1.4-1.55. the silicone modified polyimide resin composition is used for the filament substrate, the transmittance of the silicone modified polyimide resin composition is preferably changed to 93% when the filament substrate has a good transmittance at the peak wavelength of InGaN of blue-excited white L ED, the silicone modified polyimide resin composition is used for the filament, and the transmittance is preferably changed to 93% when the silicone modified polyimide resin composition is used for the filament, and the silicone modified polyimide resin composition is used for the test.

The aliphatic organosilicon modified polyimide resin composition comprises aliphatic organosilicon modified polyimide and a thermal curing agent, and the F-type aromatic organosilicon modified polyimide resin composition comprises F-type aromatic organosilicon modified polyimide and the thermal curing agent, the aliphatic organosilicon modified polyimide resin composition has high light transmittance because the aliphatic organosilicon modified polyimide has an alicyclic structure, and the fluorinated aromatic, semi-aliphatic and fully aliphatic polyimides have good light transmittance for a blue light L ED chip¹And Ar²Both of which have fluorine (F) groups. The semi-aliphatic and full-aliphatic organosilicon modified polyimide is synthesized by dianhydride, silicon-oxygen type diamine and at least one diamine (or called aliphatic diamine) without aromatic structures (such as benzene rings), or synthesized by diamine (one of which is silicon-oxygen type diamine) and at least one dianhydride (or called aliphatic anhydride) without aromatic structures (such as benzene rings), namely Ar¹And Ar²At least one of the two is an alicyclic hydrocarbon structure.

Although the dominant emission wavelength of a blue L ED chip is 450nm, due to the differences in the chip processing conditions and environmental influences, a blue L ED chip may emit a small amount of light around 400nm, the absorption rates of fluorinated aromatic, semi-aliphatic, and fully aliphatic polyimides for light around 400nm are different, and the absorption rate of fluorinated aromatic polyimides for light around 400nm is about 20%, i.e., the light transmittance of 400nm is about 80% for light through fluorinated aromatic polyimides, while the absorption rates of semi-aliphatic and fully aliphatic polyimides for light around 400nm are lower than the absorption rate of fluorinated aromatic polyimides for light around 400nm, and only about 12% is absorbed.

Table 1-1 shows that the addition of different thermal curing agents has no significant difference in light transmittance of the all-aliphatic silicone modified polyimide, but under the condition of a main light emission wavelength of 450nm for a blue light L ED chip, the addition of different thermal curing agents has an effect on the light transmittance of the all-aliphatic silicone modified polyimide, but under the condition of a short wavelength of 380nm, the addition of different thermal curing agents has an effect on the light transmittance of the all-aliphatic silicone modified polyimide, the transmittance of the silicone modified polyimide itself for short wavelength (380nm) is worse than that of long wavelength (450nm), but the degree of difference is different with the addition of different thermal curing agents, for example, when the all-aliphatic silicone modified polyimide is added with a thermal curing agent KF105, the degree of reduction in light transmittance is smaller, but when the all-aliphatic silicone modified polyimide is added with a thermal curing agent 2021p, the degree of reduction in light transmittance is larger, in an embodiment, if a uniform filament employed with a BPA L, the heat curing agent is employed for a white light transmittance of BPA short wavelength, when the heat curing agent is added with a short wavelength ED 27 nm, the UV curing agent, the UV light transmittance is greater than that of the blue light transmittance of the UV light emitted by a short wavelength ED 36410-ED 90, and the short wavelength ED 90-90, and the UV curing agent added with a visible light transmittance is selected according to the UV light transmittance of a visible light transmittance test.

TABLE 1-1

Even if the same thermosetting agent is added, the light transmittance is affected differently when the amount of the thermosetting agent added is different. Tables 1-2 show that the light transmittance is improved when the addition amount of the heat-curing agent BPA of the all-aliphatic silicone-modified polyimide is increased from 4% to 8%. However, when the addition amount is further increased to 12%, the light transmittance is hardly exhibited. It was shown that the light transmittance became better as the amount of the heat-curing agent added increased, but when the amount was increased to a certain extent, the effect of adding more heat-curing agent on the light transmittance was considerably limited.

Tables 1 to 2

TABLE 2

The heat-dissipating particles in the silicone-modified polyimide resin composition of the present invention are preferably transparent powders, or particles with high transmittance, or particles with high light reflectance, since L ED soft filament is mainly used for light emission, and therefore the filament substrate needs to have good light transmittance, and in addition, in the case of mixing two or more types of heat-dissipating particles, particles with high transmittance and particles with low transmittance can be used in combination, and the proportion of particles with high transmittance is larger than that of particles with low transmittance.

Different siloxane contents also have an effect on light transmission. As can be seen from Table 2, the light transmission was only 85% at a siloxane content of only 37% by weight, but the light transmission was shown at a level of more than 94% as the siloxane content increased to more than 45%.

Heat resistance

Factors affecting the heat resistance of the silicone-modified polyimide resin composition are at least the type of main material, the silicone content, and the type and content of a modifier (thermal curing agent).

If carefully distinguished, the fluorinated aromatic silicone-modified polyimide has better heat resistance than the aliphatic silicone-modified polyimide in accelerated heat aging tests (300 ℃ × 1 hr). therefore, in one embodiment, if a L ED filament employs a L ED chip with high power and high brightness, the fluorinated aromatic silicone-modified polyimide can be used to fabricate the filament substrate or the light conversion layer.

The thermochromism resistance of the organic silicon modified polyimide resin composition is influenced by the high and low siloxane content in the organic silicon modified polyimide, namely, the transmittance of the sample at the wavelength of 460nm after being placed is measured under the condition that the sample is placed at 200 ℃ for × 24 hours, and the transmittance after 200 ℃ for × 24 hours is only 83 percent when the siloxane content is only 37 percent by weight, the transmittance after 200 ℃ for × 24 hours is gradually increased along with the increase of the siloxane content, and the transmittance after 200 ℃ for × 24 hours is still as high as 95 percent when the siloxane content is 73 percent by weight, so that the thermochromism resistance of the organic silicon modified polyimide can be effectively improved by increasing the siloxane content.

The addition of the thermal curing agent can improve the heat resistance and the glass transition temperature. As shown in FIG. 2, A1 and A2 represent curves before and after the addition of the thermal curing agent, respectively; the curves D1 and D2 are obtained by differentiating the curves a1 and a2, respectively, and represent the degree of change of the curves a1 and a2, and from the analysis result of tma (thermal mechanical analysis) shown in fig. 2, the curve of thermal deformation is reduced when the thermal curing agent is added. Therefore, it is found that the addition of the thermosetting agent has an effect of improving the heat resistance.

When the organosilicon modified polyimide and the thermal curing agent are subjected to crosslinking reaction, the thermal curing agent only needs to have an organic group capable of reacting with an active hydrogen functional group in the polyimide, and the dosage and the type of the thermal curing agent have certain influence on the color change performance, the mechanical performance and the refractive index of the substrate, so that some thermal curing agents with better heat resistance and transmittance can be selected, and examples of the thermal curing agent comprise epoxy resin, isocyanate, bismaleimide or bisoxazoline compounds. The epoxy resin may be a bisphenol A type epoxy resin, such as BPA, and may also be a silicone type epoxy resin, such as KF105, X22-163, X22-163A, and may also be an alicyclic epoxy resin, such as 3, 4-epoxycyclohexylmethyl 3, 4-epoxycyclohexylformate (2021P), EHPE3150 CE. Through the bridging reaction of the epoxy resin, a three-dimensional bridging structure is formed between the organic silicon modified polyimide and the epoxy resin, and the structural strength of the rubber material is improved. In one embodiment, the amount of the thermal curing agent used can also be determined according to the molar amount of the thermal curing agent reacting with the active hydrogen functional groups in the silicone modified polyimide. In one embodiment, the molar amount of active hydrogen functional groups reacted with the thermal curing agent is equal to the molar amount of the thermal curing agent, e.g., 1mol of active hydrogen functional groups reacted with the thermal curing agent, the molar amount of the thermal curing agent is 1 mol.

Thermal conductivity

Factors influencing the thermal conductivity of the organic silicon modified polyimide resin composition include at least the type and content of fluorescent powder, the type and content of heat dissipation particles and the addition and type of coupling agent. Among them, the particle size and particle size distribution of the heat dissipating particles also affect the thermal conductivity.

The organic silicon modified polyimide resin composition may further contain a phosphor for obtaining a desired light emitting characteristic, and the phosphor may convert the wavelength of light emitted from the light emitting semiconductor, for example, a yellow phosphor may convert blue light into yellow light, and a red phosphor may convert blue light into red light. Yellow phosphors, e.g. (Ba, Sr, Ca)₂SiO₄:Eu、(Sr,Ba)₂SiO₄Eu (barium orthosilicate (BOS)) and the like transparent phosphor, Y₃Al₅O₁₂Ce (yttrium aluminum garnet) and Tb₃Al₃O₁₂Silicate phosphors having a silicate structure such as Ce (yttrium aluminum garnet), oxynitride phosphors such as Ca- α -SiAlON, and red phosphors including nitride phosphors such as CaAlSiN₃:Eu、CaSiN₂Eu. Green phosphors such as rare earth-halide phosphors, silicate phosphors, and the like. The content ratio of the phosphor in the silicone-modified polyimide resin composition can be arbitrarily set according to the desired light emission characteristics. In addition, since the thermal conductivity of the phosphor is much higher than that of the silicone-modified polyimide resin, the thermal conductivity of the entire silicone-modified polyimide resin composition is also improved as the content ratio of the phosphor in the silicone-modified polyimide resin composition is improved. Therefore, in one embodiment, on the premise of satisfying the light emitting characteristics, the content of the phosphor can be moderately increased to increase the thermal conductivity of the silicone modified polyimide resin composition, which is beneficial to the heat dissipation property of the filament substrate or the light conversion layer. When the silicone-modified polyimide resin composition is used as a filament substrate, the content, shape, and particle size of the phosphor in the silicone-modified polyimide resin composition also have a certain influence on the mechanical properties (e.g., elastic modulus, elongation, tensile strength) and the degree of warpage of the substrate. In order to make the base material have better mechanical property, thermal conductivity and small warping degree, the fluorescent powder contained in the organic silicon modified polyimide resin composition is granular, the shape of the fluorescent powder can be spherical, plate-shaped or needle-shaped, and the shape of the fluorescent powder is preferably spherical; the phosphor has a maximum average length (average particle diameter in the case of a sphere) of 0.1 μm or more, preferably 1 μm or more, more preferablyIs selected to be 1 to 100 μm, more preferably 1 to 50 μm; the amount of the phosphor is not less than 0.05 times, preferably not less than 0.1 times, and not more than 8 times, and preferably not more than 7 times the weight of the silicone-modified polyimide, for example, the weight of the silicone-modified polyimide is 100 parts by weight, the amount of the phosphor is not less than 5 parts by weight, preferably not less than 10 parts by weight, and not more than 800 parts by weight, and preferably not more than 700 parts by weight, and when the amount of the phosphor in the silicone-modified polyimide resin composition exceeds 800 parts by weight, the mechanical properties of the silicone-modified polyimide resin composition may not reach the strength required as a filament base layer, resulting in an increase in the fraction defective of the product. In an embodiment, two phosphors are added simultaneously, for example, when red phosphor and green phosphor are added simultaneously, the ratio of red phosphor to green phosphor is 1: 5-8, and preferably 1: 6-7. In another embodiment, two phosphors are added simultaneously, for example, when red phosphor and yellow phosphor are added simultaneously, the ratio of red phosphor to yellow phosphor is 1: 5-8, preferably 1: 6-7. In other embodiments, three or more phosphors may be added simultaneously.

The purpose of adding the heat dissipating particles is mainly to increase the thermal conductivity of the organosilicon modified polyimide resin composition, maintain the emission color temperature of L ED chips and prolong the service life of L ED chips, examples of the heat dissipating particles include silica, alumina, magnesia, magnesium carbonate, aluminum nitride, boron nitride, diamond and the like, preferably silica, alumina or a combination of the two from the viewpoint of dispersibility, regarding the particle shape of the heat dissipating particles, spherical shape, block shape and the like can be adopted, the spherical shape includes a shape similar to the spherical shape, in one embodiment, spherical and non-spherical heat dissipating particles can be adopted to ensure the dispersibility of the heat dissipating particles and the thermal conductivity of the base material, and the weight ratio of the spherical to non-spherical heat dissipating particles is 1: 0.15-0.35.

Table 3-1 shows the relationship between the content of heat dissipating particles and the thermal conductivity of the silicone-modified polyimide resin composition, which increases with the content of heat dissipating particlesThe rate is also increased, but when the content of the heat-dissipating particles in the silicone-modified polyimide resin composition exceeds 1200 parts by weight, the mechanical properties of the silicone-modified polyimide resin composition may not reach the strength required as a filament base layer, resulting in an increase in the product defective rate. In one embodiment, high-content and high-transmittance or high-reflectivity heat-dissipating particles (e.g., SiO) can be added₂、Al₂O₃) Tables 3-1 and 3-2 show that the obtained silicone-modified polyimide resin composition was cut into a circle having a film thickness of 300 μm and a diameter of 30mm as a test piece, and the thermal conductivity was measured by a thermal conductivity measuring apparatus DR L-III manufactured by Hunan, under the test conditions of a hot plate temperature of 90 ℃, a cold plate temperature of 20 ℃ and a load of 350N.

TABLE 3-1

The weight ratio is [ wt%]

0.0％

37.9％

59.8％

69.8％

77.6％

83.9％

89.0％

The volume ratio is [ vol%]

0.0％

15.0％

30.0％

40.0％

50.0％

60.0％

70.0％

Thermal conductivity [ W/m.K ]]

0.17

0.20

0.38

0.54

0.61

0.74

0.81

TABLE 3-2

For the influence of the particle size and distribution of the heat dissipating particles on the thermal conductivity of the silicone modified polyimide resin composition, please refer to table 3-2 and fig. 3. Tables 3-2 and fig. 3 show the results of adding 7 kinds of heat dissipating particles with different specifications in the same ratio to the silicone modified polyimide resin composition and the influence on the thermal conductivity thereof. The particle size of the heat-dissipating particles suitable for addition to the silicone-modified polyimide resin composition can be roughly classified into a small particle size (less than 1 μm), a medium particle size (1 to 30 μm), and a large particle size (greater than 30 μm).

Comparing specifications ①, ② and ③, specifications ①, ② and ③, which are all only added with medium-sized heat dissipating particles, are different only in average particle size, the results show that the average particle size of the heat dissipating particles does not have a significant effect on the thermal conductivity of the silicone modified polyimide resin composition under the condition that only medium-sized heat dissipating particles are added, comparing specifications ③ and ② show that under the condition that the average particle sizes are similar, the addition of specification ② with small particle sizes and medium-sized particles has a significant better thermal conductivity than the addition of specification ③ with medium-sized particles, comparing specifications ④ and ② show that under the condition that both small particle sizes and medium particle sizes are added, although there is a difference in average particle size of the heat dissipating particles, there is no significant effect on the thermal conductivity of the silicone modified polyimide resin composition, comparing specifications ④ and ② show that, besides the addition of small particle sizes and medium particle sizes, specification ② with more than specification 865 and 866, specifications 367 and 368, the addition of heat dissipating particles with more than specification 865, even though there is a difference in the average particle size distribution curve between the curve of the normal particle size distribution curve ② and ②, the curve of the curve ② shows that the heat dissipating particles is between the slope of the slope between 7- ②, and the slope of.

Therefore, the degree of influence of the particle size distribution of the heat dissipating particles on the thermal conductivity is larger than the average particle size of the heat dissipating particles, and the silicone modified polyimide resin has the best thermal conductivity when the heat dissipating particles with three kinds of particle sizes, namely large, medium and small, are added, and the content of the small particle size is about 5-20%, the content of the medium particle size is about 50-70%, and the content of the large particle size is about 20-40%. Because the heat dissipation particles are densely packed and contacted to form an efficient heat dissipation path in the same volume under the condition of three kinds of particle sizes, namely large, medium and small particle sizes.

In one embodiment, for example, alumina with a particle size distribution of 0.1-100 μm and an average particle size of 12 μm or alumina with a particle size distribution of 0.1-20 μm and an average particle size of 4.1 μm is used, wherein the particle size distribution is within the particle size range of alumina. In another embodiment, the average particle size is 1/5 to 2/5, preferably 1/5 to 1/3, of the thickness of the substrate in view of the smoothness of the substrate. The amount of the heat dissipation particles is 1-12 times of the weight (amount) of the organosilicon modified polyimide, for example, 100 parts by weight of the organosilicon modified polyimide, 100-1200 parts by weight of the heat dissipation particles, preferably 400-900 parts by weight of the heat dissipation particles, two kinds of heat dissipation particles are simultaneously added, for example, silicon dioxide and aluminum oxide are simultaneously added, and the weight ratio of the aluminum oxide to the silicon dioxide is 0.4-25: 1, preferably 1-10: 1.

When the organic silicon modified polyimide resin composition is synthesized, the adhesion between solid substances (such as fluorescent powder and heat dissipation particles) and a glue material (such as organic silicon modified polyimide) can be improved by adding a coupling agent (such as a silane coupling agent), the dispersion uniformity of the whole solid substances can be improved, and further the heat dissipation performance and the mechanical strength of a light conversion layer can be improved. The amount of the coupling agent is related to the amount of the heat dissipating particles added and the specific surface area thereof, and the amount of the coupling agent is (the amount of the heat dissipating particles is the specific surface area of the heat dissipating particles)/the minimum coating area of the coupling agent, for example, an epoxy titanate coupling agent is used, and the amount of the coupling agent is (the amount of the heat dissipating particles is the specific surface area of the heat dissipating particles)/331.5.

In other embodiments of the present invention, in order to further improve the properties of the silicone-modified polyimide resin composition in the synthesis process, additives such as a defoaming agent, a leveling agent or an adhesive may be optionally added during the synthesis process of the silicone-modified polyimide resin composition, as long as they do not affect the optical rotation resistance, mechanical strength, heat resistance and discoloration of the product. The defoaming agent is used for eliminating bubbles generated at the time of printing, coating and curing, and for example, an acrylic or silicone based surfactant is used as the defoaming agent. The leveling agent is used to eliminate irregularities on the surface of the coating film generated during printing and coating. Specifically, the composition preferably contains 0.01 to 2 wt% of a surfactant component, can suppress bubbles, can smooth a coating film by using a leveling agent such as an acrylic or silicone type, and preferably contains no ionic impurities. Examples of the binder include imidazole compounds, thiazole compounds, triazole compounds, organoaluminum compounds, organotitanium compounds, and silane coupling agents. Preferably, these additives are used in an amount of not more than 10% by weight based on the silicone-modified polyimide. When the blending amount of the additive exceeds 10% by weight, the physical properties of the resulting coating film tend to be lowered, and there also arises a problem of deterioration in optical rotation resistance caused by volatile components.

Mechanical strength

The factors influencing the mechanical strength of the organic silicon modified polyimide resin composition are at least the type of main material, the content of siloxane, the type of modifier (thermal curing agent), the content of fluorescent powder and the content of heat dissipation particles.

Different silicone-modified polyimide resins possess different properties, and table 4 shows the main properties of three silicone-modified polyimides, fluorinated aromatic, semi-aliphatic and fully aliphatic, respectively, at a siloxane content of about 45% (wt%). Fluorinated aromatics possess the best resistance to thermal discoloration, while full-aliphatic have the best light transmittance. The fluorinated aromatics have both higher tensile strength and elastic modulus. The mechanical strength test conditions shown in tables 4 to 6 were: the silicone-modified polyimide resin composition had a thickness of 50 μm and a width of 10mm, and the tensile properties of the film were measured using ISO527-3:1995 standard at a tensile rate of 10 mm/min.

TABLE 4

In order to ensure the quality of die bonding and wire bonding and improve the product quality, the elastic modulus of the filament substrate should have a certain level to resist the lower pressure of the die bonding and wire bonding processes, so the elastic modulus of the filament substrate should be greater than 2.0Gpa, preferably 2 to 6Gpa, most preferably 4 to 6Gpa table 5 shows different siloxane contents and the influence of the addition of particles (fluorescent powder and aluminum oxide) on the elastic modulus of the silicone modified polyimide resin composition, and the elastic modulus of the silicone modified polyimide resin composition is less than 2.0Gpa under the condition of no addition of fluorescent powder and aluminum oxide particles, and the elastic modulus of the silicone modified polyimide resin composition is reduced with the increase of the siloxane content, i.e. the silicone modified polyimide resin composition has a tendency of being softened, but the elastic modulus of the silicone modified polyimide resin composition is more than 1.0 Gpa under the condition of the addition of fluorescent powder and aluminum oxide particles, and the heat dissipation ratio of the silicone modified polyimide resin composition is increased to a range of heat dissipation from 0.1 μm to 50 μm, so that the heat dissipation ratio of the silicone modified polyimide resin composition is increased.

In order to make L ED filament have better bending performance, the elongation at break of the filament substrate should be greater than 0.5%, preferably 1-5%, and most preferably 1.5-5%, please refer to Table 5, under the condition of not adding phosphor and alumina particles, the organosilicon modified polyimide resin composition has excellent elongation at break, and increasing the content of siloxane, the elongation at break also increases, the elastic modulus decreases, thereby reducing the occurrence of warping.

TABLE 5

The addition of the thermal curing agent can improve the heat resistance and glass transition temperature of the organic silicon modified polyimide resin, and can also improve the mechanical properties of the organic silicon modified polyimide resin, such as tensile strength, elastic modulus and elongation at break. And different heat curing agents are added, so that different promotion effects can be achieved. Table 6 shows the effect of the silicone-modified polyimide resin composition showing different tensile strength and elongation at break after the addition of different heat curing agents. The full aliphatic organic silicon modified polyimide has better tensile strength after the thermal curing agent EHPE3150 is added, and has better elongation when the thermal curing agent KF105 is added.

TABLE 6

Table 7: specific information of BPA

Table 8: 2021P details of

Table 9: specific information of EHPE3150 and EHPE3150CE

Table 10: the refractive index can be called refractive index, and the specific information of PAME, KF8010, X22-161A, X22-161B, NH15D, X22-163, X22-163A and KF-105.

The silicone-modified polyimide resin composition of the present invention can be used as a base material in the form of a film or attached to a support. The film formation process includes three steps, (a) a coating step: spreading the organic silicon modified polyimide resin composition on a stripping body, and coating to form a film; (b) a drying and heating procedure: heating and drying the film together with the peeling body to remove the solvent in the film; (c) stripping: after completion of the drying, the film was peeled from the peeled body to obtain a film-form silicone-modified polyimide resin composition. The peeling body may be a centrifugal film or other material that does not chemically react with the silicone-modified polyimide resin composition, and for example, a PET centrifugal film may be used.

The organic silicon modified polyimide resin composition is attached to a carrier to obtain a component film, the component film can be used as a base material, and the forming process of the component film comprises two procedures: (a) a coating process: spreading and coating the organic silicon modified polyimide resin composition on a carrier to form a composition film; (b) a drying and heating procedure: the constituent film is heat-dried to remove the solvent in the film.

As the coating method in the coating step, a roll-to-roll type coating apparatus such as a roll coater, a die coater, a knife coater, or the like, or a simple coating method such as a printing method, an ink jet method, a dispensing method, a spray method, or the like can be used.

The drying method corresponding to the above-mentioned heat drying step may be selected from a vacuum drying method, a heat drying method and the like. The heating method may be a heat radiation method in which heat is generated by heating a heat source such as an electric heater or a heat medium to generate indirect convection, or infrared rays emitted from the heat source are used for heating.

The above silicone-modified polyimide resin composition can be dried and cured after coating to obtain a high thermal conductive film (composite film) to obtain a film having the characteristics of any one or a combination of the following: excellent light transmission, chemical resistance, heat resistance, thermal conductivity, film mechanical properties and optical rotation resistance. The temperature and time used in the drying and curing process may be appropriately selected depending on the solvent in the silicone-modified polyimide resin composition and the film thickness to be coated, and whether or not the drying and curing are complete may be determined based on the change in weight of the silicone-modified polyimide resin composition before and after drying and curing and the change in peak value of the thermal curing agent functional group on an infrared spectrum, for example, when an epoxy resin is used as the thermal curing agent, the difference in weight of the silicone-modified polyimide resin composition before and after drying and curing is equal to the weight of the added solvent and the increase or decrease in peak value of the epoxy group before and after drying and curing is determined as whether or not the drying.

In one embodiment, the volume percentage of the cells in the silicone modified polyimide resin composition composite film is 5-20%, preferably 5-10%, when the silicone modified polyimide resin composition composite film is synthesized in a nitrogen atmosphere or by a vacuum defoaming method or both methods, as shown in fig. 4B, the silicone modified polyimide resin composition composite film is used as a substrate for a L ED soft filament (such as the aforementioned various embodiments of L ED filament), the substrate 420B has an upper surface 420B1 and an opposite lower surface 420B2, as shown in fig. 4A, gold is sprayed on the surface of the substrate, the surface morphology of the resulting substrate is observed under a vega3 electron microscope of Tescan company, as shown in SEM images of the substrate surface shown in fig. 4B and 4A, as shown in fig. 4B and 4A, there is a cell 4d in the substrate, the volume percentage of the substrate 420B is 5-20%, preferably 5-10%, the cross section of the cell 4d is in a random shape, as shown in fig. 4B is a cross-section schematic diagram of the substrate 420B, the substrate with the light passing through a light source, the substrate 420B has a roughness of 5-20% to a roughness, preferably 5-10%, the second region of a, the substrate 4C, when the substrate is treated with a diffusion region of a diffusion medium containing a diffusion agent, the substrate 420C, the substrate 420B, the substrate 420C, the substrate has a diffusion region of a diffusion light scattering material, which is greater than the substrate 4C, which is used as a diffusion region of a light-C, which is greater than a diffusion region of a light source region of a diffusion region of a light source region of a diffusion region of a diffusion region of a light source region of a light source, which is greater than a light source region of light source, which.

When the organosilicon modified polyimide resin composition is prepared by a vacuum defoaming method, the vacuum degree during vacuum defoaming is-0.5 to-0.09 MPa, preferably-0.2 to-0.09 MPa. When the total weight of the raw materials used for preparing the organic silicon modified polyimide resin composition is less than or equal to 250g, the revolution speed is 1200-2000 rpm, the rotation speed is 1200-2000 rpm, and the vacuum defoaming time is 3-8 min. Not only can keep certain bubbles in the film to increase the uniformity of light emission, but also can keep better mechanical property. The total weight of the raw materials required for preparing the silicone-modified polyimide resin composition can be appropriately adjusted, and generally, the higher the total weight is, the lower the vacuum degree can be, and the appropriate increase in the stirring time and the stirring speed can be achieved.

According to the present invention, a resin excellent in light transmittance, chemical resistance, thermal discoloration resistance, thermal conductivity, film mechanical properties and optical rotation resistance, which is required as a base material for an L ED soft filament, can be obtained, and further, a highly thermally conductive resin film can be formed by a simple coating method such as a printing method coating method, an ink-jet method or a dispensing method.

In other embodiments, a sulfone group, a non-coplanar structure, a meta-substituted diamine and other means can be introduced to the main chain of the organosilicon modified polyimide to improve the transparency of the organosilicon modified polyimide resin composition, and in addition, in order to realize the full-period lighting effect of a bulb lamp adopting the filament, the composite film serving as the base material needs to have certain flexibility, so that an ether group (such as 4,4' -bis (4-amino-2-trifluoromethylphenoxy) diphenyl ether), a carbonyl group, a methylene group and other flexible structures can be introduced to the main chain of the organosilicon modified polyimide.

The above description of the application of the silicone modified polyimide to the filament structure is only represented by fig. 1A, but not limited thereto.

The L ED filament structure in the foregoing embodiments can be mainly applied to L ED bulb lamps, so that the L ED bulb lamp achieves a full-period light emission effect through the flexible bending characteristic of the single L ED filament, and the following further describes a specific implementation manner of applying the L ED filament to the L ED bulb lamp.

Referring to fig. 5A and 5B, fig. 5A is a schematic diagram of an L ED bulb lamp according to an embodiment of the present invention, fig. 5B is a front view (or a side view) of the L ED bulb lamp of fig. 5A, as shown in fig. 5A and 5B, a L ED bulb lamp 20d includes a lamp envelope 12, a base 16 connected to the lamp envelope 12, at least two conductive legs 51a, 51B disposed in the lamp envelope 12, a cantilever 15, a stem 19, and a single-piece L ED filament 100. as shown in fig. 5A and 5B, the stem 19 includes opposing stem bottoms connected to the base 16 and stem tops extending along an extension direction of the stem 19 into the interior of the lamp envelope 12, e.g., the stem tops may be located in the interior of the lamp envelope 12, in this embodiment, the stem 19 includes a vertical rod 19a, where the vertical rod 19a is regarded as an integral part of the stem 19a, so that the top end of the stem 19 is a top end of the stem 19a, the conductive legs 51a, 51a B are connected to the stem 19a, L ED bulb lamp filament 100 includes a filament body and two electrodes L connected to the other filament leg 51a filament 506, respectively connected to the two filament leg 51B.

Referring to fig. 5C, fig. 5C shows a top view of L ED bulb 20d of fig. 5A, as shown in fig. 5C, L ED filament 100 includes any one of a primary light emitting surface L m and a secondary light emitting surface L s, the primary light emitting surface L m faces toward the lamp envelope 12 or the lamp head 16 at any angle, i.e., toward the outside of the L ED bulb 20d or toward the outside of the lamp envelope 12, and any one of the secondary light emitting surfaces L s faces toward the top of the stem 19 or the stem 19, i.e., toward the inside of the L ED bulb 20d or toward the center of the lamp envelope 12 at any angle.

According to various embodiments, the L ED filament 100 in different L ED bulb lamps (e.g., L ED bulb lamps 0a, 20b, 20c or 20d) can be formed in different shapes or curves, and any of these L ED filaments 100 can be arranged to have a symmetrical characteristic.

L the definition of the symmetry properties of the ED filament 100 can be based on four quadrants as defined by a top view of a L ED bulb.four quadrants can be defined in a top view of a L ED bulb, the origin of which can be defined as the center of the stem or stand-off pole of a L ED bulb in a top view. L ED filament of a L ED bulb can present a ring-shaped structure, shape or profile in a top view. L ED filament present in four quadrants in a top view will have symmetry.

For example, when the L ED filament is in operation, the L ED filament exhibits a brightness in the first quadrant in top view that is symmetrical to the brightness of the L ED filament in the second, third, or fourth quadrants in top view.

In other embodiments, the configuration of L ED dies in the top view of the L ED filament on the portion of the first quadrant (e.g., variations in the density of L ED dies in the portion of the L ED filament on the first quadrant) would be symmetrical to the configuration of L ED dies in the top view of the L ED filament on the portion of the second, third, or fourth quadrant.

In other embodiments, the power arrangement of L ED chips with different powers in the L ED filament in the portion of the first quadrant in the top view (e.g., the positional distribution of L ED chips with different powers in the L ED filament in the portion of the first quadrant) would be symmetrical to the power arrangement of L ED chips with different powers in the portion of the L ED filament in the second, third, or fourth quadrant in the top view.

In other embodiments, when the L ED filament is distinguishable as segments and the segments are defined by refractive indices that are distinguishable from each other, the refractive index of the segments of the L ED filament in the first quadrant of the top view will be symmetric to the refractive index of the segments of the L ED filament in the second, third or fourth quadrant of the top view.

In other embodiments, when the L ED filament is distinguishable as segments and the segments are defined by surface roughnesses that are distinguishable from one another, the surface roughnesses of the segments of the L ED filament in the first quadrant of the top view will be symmetrical to the surface roughnesses of the segments of the L ED filament in the second, third or fourth quadrant of the top view.

The L ED filaments appearing in the four quadrants of the top view may be point symmetric (e.g., symmetric according to the origin of the four quadrants) or line symmetric (e.g., symmetric according to one of the two axes of the four quadrants).

The symmetrical structure of the L ED filament in the four quadrants of the top view may have an error of at most 20% -50%, for example, when the structure of the portion of the L ED filament in the first quadrant is symmetrical to the structure of the portion of the L ED filament in the second quadrant, the L ED filament has a designated point on the portion of the first quadrant, and the L ED filament has a symmetrical point on the portion of the second quadrant symmetrical to the designated point, the designated point having a first position, the symmetrical point having a second position, the first position and the second position may be completely symmetrical or have an error of 20% -50%.

In addition, when the L ED filament is symmetrical in two quadrants in top view, it can also be defined that the length of the portion of the L ED filament in one quadrant will be approximately equal to the length of the portion of the L ED filament in the other quadrant, the length of the portion of the L ED filament in the different quadrant can also have an error of 20% -50%, wherein the length can be the length of the L ED filament along its axial direction.

The symmetry properties of L ED filament 100 can be defined based on four quadrants defined by L ED bulb lamp in side, front or rear view in this embodiment, L ED bulb lamp side view includes front or rear view in L ED bulb lamp side view can define four quadrants, in which case the elongation direction of the stem or rod in L ED bulb lamp (from the base 16 toward the top end of the envelope 12 away from the base 16) can be defined as the Y-axis, while the X-axis can traverse the middle of the rod, while the origin of the four quadrants is defined as the middle of the rod, i.e., the intersection of the X-axis and the Y-axis.

Moreover, the L ED filament in the first quadrant and the second quadrant (upper quadrant) in the side view is symmetrical in brightness (e.g., line-symmetrical to the Y-axis), and the L ED filament in the third quadrant and the fourth quadrant (lower quadrant) in the side view is symmetrical in brightness (e.g., line-symmetrical to the Y-axis), however, the L ED filament in the upper quadrant in the side view shows brightness that is not symmetrical to that of the L ED filament in the lower quadrant in the side view.

In some embodiments, the L ED filaments are structurally symmetrical (e.g., line symmetry with the Y-axis as the line of symmetry) in the first and second quadrants (i.e., the upper two quadrants), the L ED filaments are structurally symmetrical (e.g., line symmetry with the Y-axis as the line of symmetry) in the third and fourth quadrants (i.e., the lower two quadrants), moreover, the light exit direction of the portion of the L ED filament in the first quadrant in side view is symmetrical to the light exit direction of the portion of the L ED filament in the second quadrant in side view, and the light exit direction of the portion of the L ED filament in the third quadrant in side view is symmetrical to the light exit direction of the portion of the L ED filament in the fourth quadrant in side view.

In other embodiments, the disposition of the L ED dies of the L ED filament in side view on the first quadrant portion would be symmetrical to the disposition of the L ED dies of the L ED filament in side view on the second quadrant portion, and the disposition of the L ED dies of the L ED filament in side view on the third quadrant portion would be symmetrical to the disposition of the L ED dies of the L ED filament in side view on the fourth quadrant portion.

In other embodiments, the power placement of the L ED chips with different powers on the portion of the L ED filament in side view in the first quadrant would be symmetrical to the power placement of the L ED chips with different powers on the portion of the L ED filament in side view in the second quadrant, and the power placement of the L ED chips with different powers on the portion of the L ED filament in side view in the third quadrant would be symmetrical to the power placement of the L ED chips with different powers on the portion of the L ED filament in side view in the fourth quadrant.

In other embodiments, when the L ED filament is distinguishable into segments and the segments are defined by refractive indices that are distinguishable from each other, the refractive index of the segments of the L ED filament in side view over the first quadrant would be symmetric to the refractive index of the segments of the L ED filament in side view over the second quadrant, and the refractive index of the segments of the L ED filament in side view over the third quadrant would be symmetric to the refractive index of the segments of the L ED filament in side view over the fourth quadrant.

In other embodiments, when the L ED filament is distinguishable into segments and the segments are defined by surface roughnesses that are distinguishable from each other, the surface roughness of the segments of the L ED filament in side view over the first quadrant would be symmetrical to the surface roughness of the segments of the L ED filament in side view over the second quadrant, and the surface roughness of the segments of the L ED filament in side view over the third quadrant would be symmetrical to the surface roughness of the segments of the L ED filament in side view over the fourth quadrant.

In addition, in side view, the portions of the L ED filament presented in the upper two quadrants and the L ED filament presented in the lower two quadrants are asymmetric in brightness in some embodiments, the L ED filament presented in the first and fourth quadrants is asymmetric in structure, length, in light extraction direction, configuration of L ED chips, power placement of L ED chips with different powers, in refractive index, or in surface roughness, while the L ED filament presented in the second and third quadrants is asymmetric in structure, length, in light extraction direction, configuration of L ED chips, in power placement of L ED chips with different powers, in refractive index, or in surface roughness.

L the symmetrical structure of the ED filament in the first and second quadrants of the side view can have a tolerance (tolerance) of 20% -50%, for example, the L ED filament has a designated point on the first quadrant portion, and the L ED filament has a symmetrical point symmetrical to the designated point on the second quadrant portion, the designated point has a first position, the symmetrical point has a second position, the first and second positions can be completely symmetrical or have a tolerance of 20% -50%.

In addition, in side view, the length of the L ED filament in the first quadrant may be substantially equal to the length of the L ED filament in the second quadrant, in side view, the length of the L ED filament in the third quadrant may be substantially equal to the length of the L ED filament in the fourth quadrant, however, in side view, the length of the L ED filament in the first or second quadrant may be different from the length of the L ED filament in the third or fourth quadrant, in some embodiments, in side view, the length of the L ED filament in the third or fourth quadrant may be less than the length of the L ED filament in the first or second quadrant, in side view, the length of the L ED filament in the first or second quadrant, or the length of the L ED filament in the third or fourth quadrant may also have an error of 20% -50%.

Referring to fig. 5D, fig. 5D shows the L ED filament 100 of fig. 5B in a two-dimensional coordinate system defining four quadrants, the L ED filament 100 of fig. 5D is identical to the L ED filament 100 of fig. 5B, fig. 5D is a front view (or side view) of the L ED bulb 20D of fig. 5A, as shown in fig. 5B and 5D, the Y axis is aligned with the stem 19a (i.e., the Y axis is in the direction of elongation of the stem 19 a), and the X axis is transverse to the stem 19a (i.e., the X axis is perpendicular to the direction of elongation of the stem 19 a), as shown in fig. 5D, the L ED filament 100 is divided in side view by the X axis and the Y axis into a first portion 100p1, a second portion 100p2, a third portion 100p3, and a fourth portion 100p4, the first portion 100p1 of the L ED filament 100 is shown in side view, the first portion 100p1 is shown in side view, the quadrant, the second portion of the L is shown in side view of the fourth portion 39p 46100 p 9634, and the fourth portion is shown in side view of the ED filament 9634, and the quadrant 3936 is shown in side view of the quadrant 3936.

As shown in fig. 5D, the L ED filament 100 is line-symmetric, the L ED filament 100 is symmetric about the Y axis in side view, i.e., the geometry of the first portion 100p1 and the fourth portion 100p4 is symmetric about the geometry of the second portion 100p2 and the third portion 100p3, more specifically, the first portion 100p1 is symmetric about the second portion 100p2 in side view, and even more specifically, the first portion 100p1 and the second portion 100p2 are structurally symmetric about the Y axis in side view, and furthermore, the third portion 100p3 is symmetric about the fourth portion 100p4 in side view, and even more specifically, the third portion 100p3 and the fourth portion 100p4 are structurally symmetric about the Y axis in side view.

In the present embodiment, as shown in fig. 5D, the first portion 100p1 and the second portion 100p2 located in the upper quadrant (i.e. the first quadrant and the second quadrant) in the side view and the third portion 100p3 and the fourth portion 100p4 located in the lower quadrant (i.e. the third quadrant and the fourth quadrant) in the side view are asymmetric, specifically, the first portion 100p1 and the fourth portion 100p4 in the side view are asymmetric, and the second portion 100p2 and the third portion 100p3 in the side view are asymmetric, according to the asymmetric characteristic of the structure of the L ED filament 100 in the upper quadrant and the lower quadrant in fig. 5D, more light rays are emitted from the upper quadrant and pass through the upper lamp housing 12 (the portion far from the burner 16) than light rays emitted from the lower quadrant and pass through the lower lamp housing 12 (the portion near the burner 16), so as to meet the illumination purpose and requirement of the full-cycle light fixture.

Based on the symmetrical characteristic of the L ED filament 100, the structure of the two symmetrical parts of the L ED filament 100 in side view (the first part 100p1 and the second part 100p2 or the third part 100p3 and the fourth part 100p4) may be completely symmetrical or symmetrical with a structural error.an error (tolerance) between the structures of the two symmetrical parts of the L ED filament 100 in side view may be 20% -50% or less.

The error may be defined as a difference in coordinates (i.e., x and Y coordinates), for example, if the L ED filament 100 has a specified point on the first part 100p1 of the first quadrant and the L ED filament 100 has a symmetric point on the second part 100p2 of the second quadrant that is symmetric to the specified point with respect to the Y axis, the absolute value of the Y or x coordinate of the specified point may be equal to the absolute value of the Y or x coordinate of the symmetric point, or may have a 20% difference with respect to the absolute value of the Y or x coordinate of the symmetric point.

For example, as shown in fig. 5D, a designated point (x1, Y1) of L ED filament 100 in first quadrant of first portion 100p1 is defined as a first position, a point (x2, Y2) of symmetry of L ED filament 100 in second quadrant of second portion 100p2 is defined as a second position, and the second position of point of symmetry (x2, Y2) is symmetrical to the first position of designated point (x1, Y1) with respect to the Y axis, the first and second positions may be completely symmetrical or symmetrical with an error of 20% -50%.

For example, as shown in fig. 5D, a designated point (x, Y) of the ED filament 100 in the third portion 100p of the third quadrant is defined as a third position, a symmetry point (x, Y) of the ED filament 100 in the fourth portion 100p of the fourth quadrant is defined as a fourth position, and the fourth position of the symmetry point (x, Y) is symmetrical to the third position of the designated point (x, Y) with respect to the Y axis, the third position and the fourth position may be completely symmetrical or symmetrical with an error of 20% to 50%.

As shown in FIG. 5D, the length of the first portion 100p1 of the first quadrant of the L ED filament 100 in side view is substantially equal to the length of the second portion 100p2 of the second quadrant of the L ED filament 100 in side view, in this embodiment, the length is defined along the direction of elongation of the L ED filament 100 in a plan view (e.g., side, front, or top view). for example, the first portion 100p1 is elongated in the first quadrant of the side view of FIG. 5D to form an inverted "V" shape having two ends contacting the X-axis and the Y-axis, respectively, and the length of the first portion 100p1 is defined along the inverted "V" shape between the X-axis and the Y-axis.

In addition, the length of the third portion 100p3 of the third quadrant of the L ED filament 100 in side view is substantially equal to the length of the fourth portion 100p4 of the fourth quadrant of the L ED filament 100 in side view because the third portion 100p3 and the fourth portion 100p4 are structurally symmetrical to each other with respect to the Y-axis with some error in the length of the third portion 100p3 and the length of the fourth portion 100p4, this error may be 20% -50% or less.

As shown in fig. 5D, in a side view, the light emitting direction of a designated point of the first portion 100p1 and the light emitting direction of a symmetrical point of the second portion 100p2 are symmetrical in direction with respect to the Y axis, in this embodiment, the light emitting direction may be defined as the direction faced by the L ED chips, and the direction faced by the L ED chips is defined as the direction faced by the main light emitting surface L m, and thus the light emitting direction may also be defined as the normal direction of the main light emitting surface L m, for example, the light emitting direction ED of the designated point (x1, Y1) of the first portion 100p1 is upward in fig. 5D, while the light emitting direction ED of the symmetrical point (x2, Y2) of the second portion 100p2 is upward in fig. 5D, the light emitting direction ED of the designated point (x1, Y829) and the light emitting direction ED of the symmetrical point (x2, Y2) are symmetrical with respect to the Y axis, the light emitting direction ED of the designated point (x2, Y3, Y8656) and the light emitting direction is symmetrical point (x 8672) and the light emitting direction ED) of the left portion 4,4 is symmetrical point (Y8672) and the light emitting direction of the designated point 4, and the light emitting direction (Y8672) is symmetrical point 8672, and the right portion 4, 4.

Referring to fig. 5E, fig. 5E shows the L ED filament 100 of fig. 5C in a two-dimensional coordinate system defining four quadrants, the L ED filament 100 of fig. 5E is identical to the L ED filament 100 of fig. 5C, and fig. 5E is a top view of the L ED bulb 20d of fig. 5A, as shown in fig. 5C and 5E, the centers of the four quadrants are defined as L ED bulb 20d at the center of the upright 19a in the top view (e.g., the top center of the upright 19a of fig. 5A), in this embodiment, the Y axis is vertical in fig. 5E, and the X axis is horizontal in fig. 5E, as shown in fig. 5E, the ED filament L ED filament 100 is divided by the X axis and the Y axis into a first portion 100p1, a second portion 100p2, a third portion 100p3, and a fourth portion 100p4 in the top view, the first portion 100p1 of the ED filament 100 is shown in the first portion, the second portion 100p 3976 p 3629, and the fourth portion 100p3 is shown in the top view of the ED filament quadrant L.

In some embodiments, the L ED filament 100 in top view may be point symmetric (e.g., symmetric about the origin of four quadrants) or line symmetric (e.g., symmetric about one of two axes of four quadrants). in this embodiment, as shown in fig. 5E, the L ED filament 100 is line symmetric in top view, and in particular, the L ED filament 100 is symmetric about the Y axis in top view, i.e., the geometry of the first and fourth portions 100p1 and 100p42 is symmetric about the geometry of the second and third portions 100p2 and 100p 3. specifically, in top view, the first portion 100p1 is symmetric about the second portion 100p2, and further, in top view, the first and second portions 100p1 and 100p2 are structurally symmetric about the Y axis.

Based on the symmetrical characteristic of the L ED filament 100, the structure of the two symmetrical parts of the L ED filament 100 in top view (the first part 100p1 and the second part 100p2 or the third part 100p3 and the fourth part 100p4) may be completely symmetrical or symmetrical with errors in structure. the error (tolerance) between the structures of the two symmetrical parts of the L ED filament 100 in top view may be 20% -50% or less.

For example, as shown in fig. 5E, a designated point (x1, Y1) of L ED filament 100 in first quadrant of first portion 100p1 is defined as a first position, a point (x2, Y2) of symmetry of L ED filament 100 in second quadrant of second portion 100p2 is defined as a second position, and the second position of point of symmetry (x2, Y2) is symmetrical to the first position of designated point (x1, Y1) with respect to the Y axis, the first and second positions may be completely symmetrical or symmetrical with an error of 20% -50%.

For example, as shown in fig. 5E, a designated point (x, Y) of the ED filament 100 in the third portion 100p of the third quadrant is defined as a third position, a symmetrical point (x, Y) of the ED filament 100 in the fourth portion 100p of the fourth quadrant is defined as a fourth position, and the fourth position of the symmetrical point (x, Y) is symmetrical to the third position of the designated point (x, Y) with respect to the Y axis, the third position and the fourth position may be completely symmetrical or symmetrical with an error of 20% to 50%.

As shown in FIG. 5E, the length of the first portion 100p1 of the first quadrant of the L ED filament 100 in top view is substantially equal to the length of the second portion 100p2 of the second quadrant of the L ED filament 100 in top view, in this embodiment, the length is defined along the elongated direction of the L ED filament 100 in a plan view (e.g., top, front, or side view). for example, the second portion 100p2 is elongated in the second quadrant of the top view of FIG. 5E to form an inverted "L" shape having two ends contacting the X-axis and the Y-axis, respectively, while the length of the second portion 100p2 is defined along the inverted "L" shape.

In addition, the length of the third portion 100p3 of the third quadrant of the L ED filament 100 in top view is substantially equal to the length of the fourth portion 100p4 of the fourth quadrant of the L ED filament 100 in top view because the third portion 100p3 and the fourth portion 100p4 are structurally symmetrical to each other with respect to the Y-axis with some error in the length of the third portion 100p3 and the length of the fourth portion 100p4, this error may be 20% -50% or less.

In the top view, as shown in fig. 5E, the light emitting direction of a designated point of the first portion 100p1 and the light emitting direction of the symmetrical point of the second portion 100p2 are directionally symmetrical with respect to the Y-axis in this embodiment, the light emitting direction may be defined as the direction in which L ED chips face, and the direction in which L ED chips face is defined as the direction in which the main light emitting surface L m faces, and thus the light emitting direction may also be defined as the normal direction of the main light emitting surface L m, for example, the light emitting direction ED of a designated point (x1, Y1) of the first portion 100p1 is to the right in fig. 5E, while the light emitting direction of a symmetrical point (x2, Y2) of the second portion 100p2 is to the left in fig. 5E, the light emitting direction ED of a designated point (x2, Y2) and the light emitting direction ED of a symmetrical point (x2, Y2) of the third portion 100p2 are symmetrical point (x2, Y2) and the light emitting direction of the symmetrical point (Y2) in the light emitting direction of the first portion 100p2, and the light emitting direction of the designated point (Y2) are symmetrical point (Y2) and the light emitting direction of the right point (Y2) and the symmetrical point (Y2) in the light emitting direction of the designated point 2).

As with the previous embodiments, in side view (including front view or rear view) and/or top view, the symmetrical characteristics of the L ED filament 100 with respect to the symmetrical structure, symmetrical light exit direction, symmetrical configuration of L ED chips 442, symmetrical power placement of L ED chips 442, symmetrical refractive index and/or symmetrical surface roughness help to generate uniformly distributed light, and the symmetrical design of the symmetrical power placement, symmetrical refractive index and/or symmetrical surface roughness of L ED chips 442 can be combined with the above-mentioned segmented characteristics of L ED filament to enable the L ED bulb lamp with L ED filament 100 to generate full-cycle light.

The definition of full ambient light depends on the area where the L ED bulb lamp is used and may vary over time, depending on different institutions and countries, it is stated that L ED bulb lamps that can provide full ambient light may need to meet different standards, page 24 of the american energy star project light fixture (bulb) eligibility criterion first edition (eligibility criterion version1.0), which defines that at a setting in the base-up of the full-ambient lamp fixture, the light emitted between 135 degrees and 180 degrees should be at least 5% of the total luminous flux (lm), while the brightness measurement of 90% is variable, but not differ more than 25% from the average of the total brightness measurements in all planes, on each vertical plane, with an increase of 5 degrees in vertical angle (maximum), measured between 0 degrees and 135 degrees, while the JE specification L meets the requirements of the full-axis led lamp fixture 120, with a luminous flux setting that is not more than 25% of the aforementioned luminous flux of the japanese bulb 20 ED lamp fixture 120, with a bulb 20 degrees in its light axis 4670, which may not meet the aforementioned requirements.

Referring to fig. 6A and 6B to 6D, fig. 6A is a schematic diagram illustrating an L ED bulb 40a according to an embodiment of the invention, and fig. 6B to 6D are a side view, another side view and a top view of the L ED bulb 40a of fig. 6A, respectively, in the present embodiment, a L ED bulb 40a includes a lamp housing 12, a base 16 connected to the lamp housing 12, a stem 19 and a single-strip L ED filament 100, and the single-strip L ED filament 100 disposed in the L ED bulb 40a and the L ED bulb 40a can refer to the L ED bulb and the L ED filament of the previous embodiments and their descriptions, wherein the connection relationships between the same or similar components are not described in detail.

In the present embodiment, the stem 19 is connected to the burner 16 and located inside the envelope 12, the stem 19 has a vertical rod 19a extending vertically to the center of the envelope 12, the vertical rod 19a is located on the central axis of the burner 16, or the vertical rod 19a is located on the central axis of the L ED bulb 40a, the L ED filament 100 is disposed around the vertical rod 19a and located inside the envelope 12, and L ED filament 100 is connected to the vertical rod 19a through a cantilever (detailed description of the cantilever can refer to the previous embodiment and the drawings) to maintain a predetermined curve and shape, L ED filament 100 includes two electrodes 110, 112 located at both ends, a plurality of L ED 2ED segments 102, 104 and a plurality of conductor segments 130. as shown in fig. 6A to 6D, in the drawings, for separating the conductor segments 130 from L ED segments 102, 104, L4 ED segments 100 at the portions of the conductor segments 130 are distributed at a plurality of points where the adjacent conductor segments 130 are connected to each other conductor segments 102, 104, and the adjacent conductor segments 130 are distributed at a plurality of points 637, 9.

As shown in fig. 6A-6D, in this embodiment, there are three conductor segments of the L ED filament 100, wherein there are two first conductor segments 130, one second conductor segment 130', and four L ED segments 102, 104, and each two adjacent L0 ED segments 102, 104 are bent through the first and second conductor segments 130, 130', and, because the first and second conductor segments 130, 130' have a higher flexibility than the L ED segments 102, 104, the first and second conductor segments 130, 130' between the two adjacent L ED segments 102, 104 may be bent to a greater extent, such that the included angle between the two adjacent L ED segments 102, 104 may be relatively smaller, e.g., up to 45 degrees or less, in this embodiment, each L ED segment 102, 104 may be bent slightly or not, than the first and second conductor segments 130, 130' in the first and second conductor segments 130, 130', and L, the first and second conductor segments 130 a may be bent to a greater extent than the first and second conductor segments 130', 130' and the bent to a single length of the filament 100 ' may be defined and the bent, 130', 100 ' may be bent to a single filament.

As shown in fig. 6B and 6C, in the present embodiment, each of the first and second conductor segments 130 and 130 'and the two adjacent L ED segments 102 and 104 form a U-shaped or V-shaped bent structure, and the U-shaped or V-shaped bent structure formed by each of the first and second conductor segments 130 and 130' and the two adjacent L ED segments 102 and 104 is bent and divided into two segments, and the two L ED segments 102 and 104 are the two segments, respectively.

In the present exemplary embodiment, as shown in fig. 6B, the electrodes 110, 112 are located in the Z direction between the highest point and the lowest point of the L ED filament 100, the highest point being located in the highest first conductor segment 130 in the Z direction, and the lowest point being located in the Z direction, the lower second conductor segment 130 'representing the approach of the electrode to the burner 16 relative to the electrodes 110, 112, and the higher first conductor segment 130 representing the approach of the electrode to the burner 16 relative to the electrodes 110, 112, viewed in the YZ plane (see fig. 6B), the electrodes 110, 112 may be connected together in a straight line L a, the higher first conductor segment 130 being located above the straight line L a has two, and the lower second conductor segment 130' being located below the straight line L a has one, in other words, in the Z direction, the number of first conductor segments 130 located above the straight line 4a connecting the electrodes 110, 112, may be greater than the number of second conductor segments 130 'located below the straight line L a, in the Z direction, in comparison with the number of projections of the first conductor segments 130, 130' of the straight line L a, the two adjacent electrodes 110, 112, respectively located closer to the projection of the straight line 110, 112, 12, on the straight line 300, and the straight line 300, thus, respectively, the projection of the straight line 3616, on the straight line 366A straight line 300, on the straight line 300, the straight line 366A connection.

As shown in FIG. 6C, in this embodiment, if the L ED filament 100 is projected on the XZ plane (see FIG. 6C), the projections of the two opposing L ED segments 102, 104 overlap each other.

As shown in fig. 6D, in the present embodiment, if the L ED filament 100 is projected on the XY plane (see fig. 6D), the projections of the electrodes 110 and 112 on the XY plane can be connected to form a straight line L B, and the projections of the first conductor segment 130 and the second conductor segment 130' on the XY plane do not intersect or overlap with the straight line L B, and the projections of the first conductor segment 130 and the second conductor segment 130' on the XY plane are located on one side of the straight line L B, for example, as shown in fig. 6D, the projections of the first conductor segment 130 and the second conductor segment 130' on the XY plane are located above the straight line L B.

As shown in fig. 6B to 6D, in the present embodiment, the projection lengths of L ED filament 100 on three projection planes perpendicular to each other are scaled to make the illumination more uniform, for example, the projection of L ED filament 100 on a first projection plane (e.g., XY plane) has a length L, the projection of L ED filament 100 on a second projection plane (e.g., YZ plane) has a length L, and the projection of L ED filament 100 on a third projection plane (e.g., XZ plane) has a length L, wherein the first projection plane, the second projection plane and the third projection plane are perpendicular to each other, and the normal of the first projection plane is parallel to the axis of 6865 ED lamp 40a from the center of the lamp housing 12 to the center of the lamp base 16. further, the projection of L6 ED filament 100 on the XY plane can be referred to fig. 6D, the projection length of which is similarly inverted U-shaped, and the projection length of projection 56 on the XY plane is nearly equal to the projection length of the filament 861, as the projection length of the filament 72, and the projection length of the filament 72, as the projection length of the filament 72, the projection length of the projection of the filament 72, the projection of the.

In some embodiments, the projected length of the L ED filament 100 in the XZ plane or in the YZ plane is, for example and without limitation, the minimum value of the height difference in the Z direction of the first and second conductor segments 130, 130 'multiplied by the magnitude of the L ED segments 102, 104 or the minimum value of the height difference in the Z direction of the L ED filament multiplied by the magnitude of the L ED segments 102, 104. in this embodiment, the total length of the L ED filament 100 is about 7 to 9 times the total length of the first or second conductor segments 130, 130'.

In the present embodiment, the L ED filament 100 can be bent to form various curves through the first conductor segment 130 and the second conductor segment 130', which not only increases the aesthetic feeling of the L ED bulb 40a in terms of appearance, but also makes the light emitted from the L ED bulb 40a more uniform, thereby achieving better illumination effect.

The present invention refers to an L ED filament and a L ED filament, which are formed by connecting the aforementioned conductor segment and L ED segment together, and have the same and continuous light conversion layer (including the same and continuously formed top layer or bottom layer), and two conductive electrodes electrically connected to the conductive support of the bulb are only disposed at two ends, and the single L ED filament structure is the one consistent with the above structural description.

While the present invention has been described with reference to the preferred embodiments, it will be understood by those skilled in the art that the embodiments are merely illustrative of the present invention and should not be construed as limiting the scope of the present invention. It should be noted that equivalent variations and substitutions to those of the embodiments are intended to be included within the scope of the present invention. Therefore, the protection scope of the present invention is subject to the scope defined by the appended claims.

Claims (9)

1. An L ED bulb lamp, characterized in that it comprises:

a lamp housing;

the lamp holder is connected with the lamp shell;

the core column comprises a core column bottom and a core column top which are opposite, the core column bottom is connected with the lamp cap, and the core column top extends to the inside of the lamp shell along the extension direction of the core column;

the two conductive brackets are arranged in the lamp shell and connected with the core column;

at least one L ED filament, wherein the L ED filament comprises a filament body and two electrodes, the two electrodes are respectively arranged at two opposite ends of the filament body and are respectively connected with the conductive supports, the filament body comprises a light conversion layer and a L ED chip, the light conversion layer comprises a top layer and a base layer opposite to the top layer, the base layer is provided with an upper surface and a lower surface opposite to the upper surface, the upper surface is used for placing the L ED chip, the upper surface comprises a first area and a second area, the second area comprises foam pores, the surface roughness of the first area is smaller than that of the second area, and

and the cantilever is connected with the core column and the filament body.

2. The L ED bulb lamp of claim 1, wherein the lower surface includes a third region having a surface roughness greater than a surface roughness of the first region.

3. The L ED bulb lamp of claim 1, wherein the filament body includes a primary light emitting surface and a secondary light emitting surface, any section of the primary light emitting surface facing the lamp envelope or base at any angle.

4. The L ED bulb lamp of claim 3, wherein any section of the secondary light emitting surface is at any angle towards the stem or the stem top.

5. The L ED bulb lamp of claim 1, wherein four quadrants are defined with a top view of the L ED bulb lamp with origins on the stem, the L ED filament exhibits brightness in a first quadrant in top view, symmetrical to the brightness of the L ED filament in a second, third or fourth quadrant in top view.

6. The L ED bulb lamp of claim 5, wherein the L ED filament is symmetric in light-exiting direction of the portion in the first quadrant in top view with respect to the portion in the second, third or fourth quadrant in top view of the L ED filament.

7. The L ED bulb lamp of claim 5, wherein the configuration of the L ED filament L ED chips on a portion of a first quadrant in a top view is symmetrical to the configuration of the L ED filament L ED chips on a portion of a second, third or fourth quadrant in a top view.

8. The L ED bulb lamp of claim 5, wherein the L ED filament has a power arrangement of L ED chips with different powers on a portion of a first quadrant in a top view, symmetrical to a power arrangement of L ED chips with different powers on a portion of a second, third or fourth quadrant of the L ED filament in a top view.

9. The L ED bulb lamp of claim 5, wherein the L ED filament region is divided into a plurality of segments and the segments are defined by refractive indices that are distinct from each other, the refractive index of the plurality of segments of the L ED filament in top view on a portion of a first quadrant is symmetrical to the refractive index of the plurality of segments of the L ED filament in top view on a portion of a second, third or fourth quadrant.

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