CN210957269U - External cavity semiconductor laser bar collimation wave-locking device - Google Patents
External cavity semiconductor laser bar collimation wave-locking device Download PDFInfo
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- CN210957269U CN210957269U CN201922164025.6U CN201922164025U CN210957269U CN 210957269 U CN210957269 U CN 210957269U CN 201922164025 U CN201922164025 U CN 201922164025U CN 210957269 U CN210957269 U CN 210957269U
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Abstract
The utility model provides an exocoel semiconductor laser bar collimation lock ripples device, including first aspheric cylindrical mirror, aspheric rotating mirror array, second aspheric cylindrical mirror, first aspheric cylindrical mirror the aspheric rotating mirror array the second aspheric cylindrical mirror sets gradually on the light path of semiconductor laser bar light beam, semiconductor laser bar first aspheric cylindrical mirror the aspheric rotating mirror array the optical axis coincidence of second aspheric cylindrical mirror. The utility model discloses can collimate to the light beam of semiconductor laser bar to reduce the divergence of light beam, and still can promote the quality of light beam.
Description
Technical Field
The utility model relates to a semiconductor laser technical field especially relates to an exocoel semiconductor laser bar collimation lock ripples device.
Background
The semiconductor laser has wide application in military affairs, medical treatment, monitoring, laser processing and other aspects, and because of the special waveguide structure of the semiconductor laser bar, the divergence angle of the fast axis is 25-60 degrees, the divergence angle of the slow axis is 5-15 degrees, and the quality of the light beam in the direction of the fast axis of the single light source light beam is superior to that of the slow axis, and the direct application of the semiconductor laser bar is limited by the larger divergence angle and the poorer quality of the light beam.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides an external cavity semiconductor laser bar collimation lock ripples device to solve the problem that external cavity semiconductor laser bar light beam divergence angle is big, the light beam quality is poor.
The technical scheme of the utility model is realized like this: the utility model provides an exocoel semiconductor laser bar collimation lock ripples device, including first aspheric cylindrical mirror, aspheric rotating mirror array, second aspheric cylindrical mirror, first aspheric cylindrical mirror the aspheric rotating mirror array the second aspheric cylindrical mirror sets gradually on the light path of semiconductor laser bar light beam, semiconductor laser bar first aspheric cylindrical mirror the aspheric rotating mirror array the optical axis coincidence of second aspheric cylindrical mirror.
Optionally, the external cavity semiconductor laser bar collimating and wave-locking device further includes a volume bragg grating, the first aspheric cylindrical mirror, the aspheric rotating mirror array, the second aspheric cylindrical mirror, and the volume bragg grating are sequentially disposed on the light path of the semiconductor laser bar beam, and the optical axis of the light emitted from the semiconductor laser bar, the first aspheric cylindrical mirror, the aspheric rotating mirror array, the second aspheric cylindrical mirror, and the optical axis of the volume bragg grating all coincide.
Optionally, the length of the volume bragg grating is not less than the length of the semiconductor laser bar.
Optionally, 2 to 30 light emitting sources are provided on a single semiconductor laser bar.
Optionally, at least one of the first aspheric cylindrical mirror, the aspheric rotating mirror array, and the second aspheric cylindrical mirror is formed by compression molding.
Optionally, at least one of the first aspheric cylindrical mirror, the aspheric rotating mirror array, and the second aspheric cylindrical mirror is made of a low-melting-point glass material.
Optionally, the lengths of the first aspheric cylindrical mirror, the aspheric rotating mirror array, and the second aspheric cylindrical mirror are not less than the length of the semiconductor laser bar.
The utility model discloses an accurate ripples device that locks of exocoel semiconductor laser batten has following beneficial effect for prior art:
(1) the utility model discloses a first aspheric cylindrical mirror is to the fast axle direction of the stick light beam collimation, and the aspheric rotating mirror array is to the propagation direction of stick output beam 90 degrees deflection, makes the emergent light of single light source superpose in the fast axle direction of light beam on the stick to improve the quality of stick light beam, and the second aspheric cylindrical mirror is to the slow axle direction collimation of stick light beam;
(2) the utility model discloses still can lock the output wavelength of the bar light beam, narrow spectral line width presses.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a front view of an external cavity semiconductor laser bar collimating wave-locking device of the present invention;
fig. 2 is a top view of the external cavity semiconductor laser bar collimating wave-locking device of the present invention.
Description of reference numerals:
10-semiconductor laser bars; 20-a first aspheric cylindrical mirror; 30-an aspheric rotating mirror array; 40-a second aspheric cylindrical mirror; 50-volume bragg grating.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work all belong to the protection scope of the present invention.
As shown in fig. 1, combine fig. 2, the utility model discloses an external cavity semiconductor laser batten collimation lock ripples device, including first aspheric cylindrical mirror 20, aspheric rotating mirror array 30, second aspheric cylindrical mirror 40, first aspheric cylindrical mirror 20 aspheric rotating mirror array 30 the second aspheric cylindrical mirror 40 sets gradually on the light path of semiconductor laser batten 10 light beam, semiconductor laser batten 10 first aspheric cylindrical mirror 20 aspheric rotating mirror array 30 the optical axis coincidence of second aspheric cylindrical mirror 40.
The single first aspheric cylindrical mirror 20, the single aspheric rotating mirror array 30, and the single second aspheric cylindrical mirror 40 are common devices, and their functions are also common and will not be described herein. The semiconductor laser bar 10, the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30 and the second aspheric cylindrical mirror 40 are all parallel to each other, the light beam of the semiconductor laser bar 10 can be a bar array composed of one or more laser bars, a plurality of light emitting sources are arranged on a single bar, the aspheric rotating mirror array 30 is an array composed of a plurality of aspheric rotating mirrors, the optical axes of the single bar, the first aspheric cylindrical mirror 20, the single aspheric rotating mirror and the second aspheric cylindrical mirror 40 are coincided in the light path direction of the bar, the bar light beam sequentially passes through the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30 and the second aspheric cylindrical mirror 40, the first aspheric cylindrical mirror 20 collimates the fast axis direction of the bar light beam, the aspheric rotating mirror array 30 deflects the propagation direction of the bar output light beam by 90 degrees, the emergent light of the single light source on the bar is superposed in the fast axis direction of the light beam, so as to improve the quality of the bar light beam, the second aspheric cylindrical mirror 40 collimates the slow axis direction of the beam. The external cavity semiconductor laser bar collimating wave-locking device in this sample embodiment can collimate the beam of the semiconductor laser bar 10 to reduce the divergence of the beam and also improve the quality of the beam.
Optionally, the lengths of the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30, and the second aspheric cylindrical mirror 40 are not less than the length of the semiconductor laser bar 10.
The length is the length of the array extending direction of the laser bar array, that is, the length of the array extending direction of the aspherical turning mirror array 30, and since the semiconductor laser bar 10 may include a plurality of bars, the lengths of the first aspherical cylindrical mirror 20, the aspherical turning mirror array 30, and the second aspherical cylindrical mirror 40 are not less than the length of the semiconductor laser bar 10, it is ensured that the functions of the first aspherical cylindrical mirror 20, the aspherical turning mirror array 30, and the second aspherical cylindrical mirror 40 cover all the bars on the semiconductor laser bar 10, and it is ensured that the beams of all the bars are collimated and the quality of the beams is improved. In this embodiment, the lengths of the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30, the second aspheric cylindrical mirror 40, and the semiconductor laser bar 10 are preferably the same, so that the cost is saved on the premise of ensuring collimation and improving quality.
Optionally, as shown in fig. 1 and with reference to fig. 2, the external cavity semiconductor laser bar collimating and wave-locking device further includes a volume bragg grating 50, the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30, the second aspheric cylindrical mirror 40, and the volume bragg grating 50 are sequentially disposed on the light path of the light beam of the semiconductor laser bar 10, and the optical axes of the light emitted from the semiconductor laser bar 10, the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30, the second aspheric cylindrical mirror 40, and the optical axes of the volume bragg grating 50 are all coincident.
The individual bragg grating 50 is a common device, and its function is also common, and will not be described herein. In this embodiment, the bar beam sequentially passes through the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30, and the second aspheric cylindrical mirror 40 and then enters the volume bragg grating 50, and the volume bragg grating 50 performs frequency-selective reflection on the light with the wavelength satisfying the bragg diffraction condition, so as to lock the output wavelength and narrow the spectral line width.
Optionally, the length of the volume bragg grating 50 is not less than the length of the semiconductor laser bar 10.
Since the semiconductor laser bar 10 may include a plurality of bars, the length of the volume bragg grating 50 is not less than the length of the semiconductor laser bar 10, it can be ensured that the function of the volume bragg grating 50 covers all bars on the semiconductor laser bar 10, and it is ensured that the output wavelengths and the narrowed spectral line widths of all bar beams are locked. In this embodiment, the lengths of the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30, the second aspheric cylindrical mirror 40, the volume bragg grating 50 and the semiconductor laser bar 10 are preferably the same, so that the cost is saved on the premise of ensuring collimation, improving quality and locking output wavelength.
In this embodiment, the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30, the second aspheric cylindrical mirror 40, the volume bragg grating 50, and the semiconductor laser bar 10 are substantially rectangular parallelepiped structures, a distance between the first aspheric cylindrical mirror 20 and the aspheric rotating mirror array 30 is smaller than a distance between the second aspheric cylindrical mirror 40 and the aspheric rotating mirror array 30, lengths and thicknesses of the first aspheric cylindrical mirror 20 and the second aspheric cylindrical mirror 40 are the same, a width of the second aspheric cylindrical mirror 40 is larger than a width of the first aspheric cylindrical mirror 20, and the widths are measured in a vertical direction in fig. 2.
Optionally, 2 to 30 light emitting sources are provided on a single semiconductor laser bar 10. The 2-30 light-emitting sources can meet the application environment of most bars.
Optionally, at least one of the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30, and the second aspheric cylindrical mirror 40 is formed by compression molding. The compression molding process is simple, the cost is low, the precision of the compression molding assembly is controllable, the precision is stable, the efficiency is high, and the compression molding assembly is suitable for batch production of devices. When the first aspherical cylindrical mirror 20 and the second aspherical cylindrical mirror 40 are precisely molded, the cost can be greatly reduced while achieving diffraction limit collimation.
Optionally, at least one of the first aspheric cylindrical mirror 20, the aspheric rotating mirror array 30, and the second aspheric cylindrical mirror 40 is made of a low-melting-point glass material. The low-melting-point glass has low processing temperature, and the processing is easy to realize and convenient for mass replication.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. The external cavity semiconductor laser batten collimation wave-locking device is characterized by comprising a first aspheric cylindrical mirror (20), a aspheric rotating mirror array (30) and a second aspheric cylindrical mirror (40), wherein the first aspheric cylindrical mirror (20), the aspheric rotating mirror array (30) and the second aspheric cylindrical mirror (40) are sequentially arranged on a light path of a light beam of a semiconductor laser batten (10), and optical axes of the semiconductor laser batten (10), the first aspheric cylindrical mirror (20), the aspheric rotating mirror array (30) and the second aspheric cylindrical mirror (40) are coincided.
2. The external cavity semiconductor laser bar collimating and wave-locking device according to claim 1, further comprising a volume bragg grating (50), wherein the first aspheric cylindrical mirror (20), the aspheric rotating mirror array (30), the second aspheric cylindrical mirror (40), and the volume bragg grating (50) are sequentially disposed on an optical path of the light beam of the semiconductor laser bar (10), and optical axes of the light emitted from the semiconductor laser bar (10), the first aspheric cylindrical mirror (20), the aspheric rotating mirror array (30), the second aspheric cylindrical mirror (40), and the volume bragg grating (50) all coincide.
3. The external cavity semiconductor laser bar collimated wave-locking device according to claim 2, wherein the length of the volume bragg grating (50) is not less than the length of the semiconductor laser bar (10).
4. The external cavity semiconductor laser bar collimated wave-locking device according to claim 1, wherein 2 to 30 light-emitting sources are provided on a single semiconductor laser bar (10).
5. The external cavity semiconductor laser bar collimating lock wave device according to claim 1, wherein at least one of the first aspheric cylindrical mirror (20), the aspheric rotating mirror array (30), and the second aspheric cylindrical mirror (40) is molded.
6. The external cavity semiconductor laser baryta collimated lock wave device according to claim 1, wherein at least one of the first aspheric cylindrical mirror (20), the aspheric turning mirror array (30), and the second aspheric cylindrical mirror (40) is made of a low melting point glass material.
7. The external cavity semiconductor laser bar collimated lock wave device according to claim 1, wherein the lengths of the first aspheric cylindrical mirror (20), the aspheric rotating mirror array (30) and the second aspheric cylindrical mirror (40) are not less than the length of the semiconductor laser bar (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922164025.6U CN210957269U (en) | 2019-12-06 | 2019-12-06 | External cavity semiconductor laser bar collimation wave-locking device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922164025.6U CN210957269U (en) | 2019-12-06 | 2019-12-06 | External cavity semiconductor laser bar collimation wave-locking device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210957269U true CN210957269U (en) | 2020-07-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922164025.6U Active CN210957269U (en) | 2019-12-06 | 2019-12-06 | External cavity semiconductor laser bar collimation wave-locking device |
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| Country | Link |
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| CN (1) | CN210957269U (en) |
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- 2019-12-06 CN CN201922164025.6U patent/CN210957269U/en active Active
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