CN210927635U

CN210927635U - 10G SFP +1310nm60KM optical module

Info

Publication number: CN210927635U
Application number: CN201921862604.1U
Authority: CN
Inventors: 侯平胜
Original assignee: Wuhan Yongxinfeng Technology Co ltd
Current assignee: Wuhan Yongxinfeng Technology Co ltd
Priority date: 2019-10-31
Filing date: 2019-10-31
Publication date: 2020-07-03
Anticipated expiration: 2029-10-31

Abstract

The utility model relates to a 10G SFP +1310nm60KM optical module, including circuit unit, light path unit and electric interface circuit, the circuit unit includes main chip and MCU, main chip is connected with electric interface circuit and MCU respectively; the light path unit comprises a laser, a photoelectric detector and a preamplifier, wherein the laser and the photoelectric detector are respectively connected with the electrical interface circuit, and the preamplifier is respectively connected with the photoelectric detector and the main chip. The main chip adopted by the utility model is a receiving and transmitting integrated chip integrating the transmitting driving chip and the receiving rear chip, and the cost is low; the utility model discloses a built-in transmission driver chip and the laser instrument of main chip are connected, just can drive the laser instrument and give out light, and the circuit is simple and the laser instrument is with low costs.

Description

10G SFP +1310nm60KM optical module

Technical Field

The utility model belongs to the technical field of optical communication, especially, relate to a 10G SFP +1310nm60KM optical module.

Background

With the development of communication technology, optical fiber communication technology has been widely developed and applied, and in the current information era, the transmission capacity in the communication field is increasing day by day, and the traditional transmission technology has been difficult to meet the requirements of transmission capacity and transmission speed. Although high-speed (40, 100Gbit/s) technology has become the focus of attention of each large operator, 10Gbit/s technology is still the mainstream technology of the current communication system, and a dense wavelength division optical communication module based on standardization becomes an indispensable part thereof.

In optical fiber communication, an optical transceiver module that realizes an optical-electrical-optical conversion function occupies a very important position. Referring to fig. 1, the existing 10G SFP +60Km dual-fiber optical module generally adopts a 1550nm wavelength, and a specific optical module laser adopts a 1550nm EML laser, which is generally imported from abroad and is expensive, and the circuit scheme can only adopt a circuit for driving the EML laser, so that the cost is high; and the circuitry of the 1550nm EML laser is cumbersome: in addition to the driver chip circuit U1, a TEC control circuit U2 is also required to control the TEC temperature of the EML laser, which will emit light after the temperature has stabilized.

SUMMERY OF THE UTILITY MODEL

The utility model aims at the above-mentioned current situation, provide a 10G SFP +1310nm60KM optical module that speed is fast, the low power dissipation, with low costs.

In order to achieve the above object, the present invention provides the following technical solutions:

A10G SFP +1310nm60KM optical module comprises a circuit unit, an optical path unit and an electrical interface circuit, wherein the circuit unit comprises a main chip and an MCU (microprogrammed control unit), the main chip is electrically connected with the MCU, and the main chip and the MCU are both electrically connected with the electrical interface circuit; the optical path unit comprises a laser, a photoelectric detector and a preamplifier, wherein the laser and the photoelectric detector are respectively and electrically connected with an electrical interface circuit, the preamplifier is electrically connected with the photoelectric detector, the photoelectric detector is used for converting detected optical signals into electrical signals, the preamplifier is used for amplifying the electrical signals from the photoelectric detector, the wavelength of the laser is 1310nm, and an emission driving chip circuit and a post-amplifier circuit are integrated in the main chip.

Preferably, the main chip is directly and electrically connected with the laser, and the main chip drives the laser to emit light through the built-in emission driving chip circuit.

Preferably, the main chip is directly electrically connected to the preamplifier, and the main chip further amplifies the electrical signal from the preamplifier through a built-in post-amplifier.

Preferably, the electrical interface circuit is a 20PIN interface circuit.

Preferably, the optical path unit further includes a voltage boosting circuit, the voltage boosting circuit is electrically connected to the electrical interface circuit and the photodetector, and the voltage boosting circuit is configured to provide an operating high voltage to the photodetector.

Preferably, the boost circuit adopts a MAX15059 chip.

Preferably, the laser and the photodetector adopt a 10G DFB laser and a 10G APD photodetector.

The utility model discloses the outstanding substantive characteristics of technical scheme and the progress that is showing mainly reflect: the 10G SFP +1310nm60KM optical module adopts a 10G DFB laser and a 10G APD photoelectric detector in the light path design, compared with the traditional EML laser circuit, the 10G DFB laser has higher synthesis degree and greatly reduces the manufacturing cost, and the transmission distance can reach 60 KM; the 10G APD photoelectric detector has high sensitivity and can work at a speed compatible with 1.25Gbit/s to 11.3 Gbit/s.

Drawings

The drawings referred to in the description of the embodiments of the present invention are briefly introduced below to more clearly and completely describe the technical solutions in the embodiments of the present invention, and the following drawings are only for some embodiments of the present invention and are not intended to limit the present invention.

FIG. 1 is a schematic circuit diagram of a conventional 1550nm EML laser;

fig. 2 is a functional block diagram of the 10G SFP +1310nm60KM optical module of the present invention;

fig. 3 is a schematic diagram of a booster circuit of the 10G SFP +1310nm60KM optical module of the present invention;

fig. 4 is a schematic circuit diagram of a 1310nm DFB laser of the 10G SFP +1310nm60KM optical module according to the present invention.

Reference numerals: 1-a circuit unit; 2-an optical path unit; 3-an electrical interface circuit; 11-a master chip; 12-MCU; 21-a laser; 22-a photodetector; 23-a preamplifier; 24-a booster circuit.

Detailed Description

The principles and features of the present invention will be described in more detail below with reference to the accompanying drawings, which are provided for purposes of illustration only and are not intended to limit the scope of the invention.

As shown in fig. 2, the utility model provides a 10G SFP +1310nm60KM optical module includes circuit unit 1, light path unit 2 and electrical interface circuit 3, and circuit unit 1 includes main chip 11 and MCU 12, and main chip 11 is connected with electrical interface circuit 3 and MCU 12 electricity respectively; the optical path unit 2 specifically includes a laser 21, a photodetector 22 and a preamplifier 23, the laser 21 and the photodetector 22 are respectively electrically connected to the electrical interface circuit 3, the preamplifier 23 is electrically connected to the photodetector 22, the photodetector 22 is configured to convert a detected optical signal into an electrical signal, and the preamplifier 23 is configured to amplify the electrical signal from the photodetector 22.

In this embodiment, the main chip 11 is a two-in-one chip, the specific model of the main chip 11 is GN1157, the emission driving chip circuit and the post-amplifier circuit are integrated in the main chip 11, the main chip 11 is directly electrically connected with the laser 21 and the pre-amplifier 23, the main chip 11 drives the laser 21 to emit light through the built-in emission driving chip circuit, and the main chip 11 amplifies the electrical signal from the pre-amplifier 23 through the built-in post-amplifier circuit. The main chip 11 is provided with a peripheral circuit composed of a resistor, a capacitor and the like, and the manufacturing cost of the 10G SFP +1310nm60KM optical module can be reduced by adopting a receiving and transmitting integrated chip. MCU 12 is F392 chip, MCU 12 passes through I²The C data bus controls and changes the value of the register of the main chip 11, and the parameters required by the transmission and the reception of the optical path are debugged by changing different values of the register of the main chip 11. The electrical interface circuit 3 is a 20PIN interface circuit, the 20PIN interface circuit is used for establishing communication connection between the 10G SFP +1310nm60KM optical module and the remote device, and the packaging form of the corresponding 10G SFP +1310nm60KM optical module is also defined by the 20 PIN.

In the present embodiment, the laser 21 and the photodetector 22 are a 10G DFB laser and a 10G APD photodetector, and the wavelength of the laser 21 is 1310 nm. The photodetector 22 is an APD type detector with an internal photomultiplier (or avalanche) diode, and therefore has a sensitivity much higher than that of a PIN type detector. Compare in traditional 1550nm optical module, the utility model discloses a wavelength range that photodetector 22 of 10G SFP +1310nm60KM optical module can detect is very wide, can both detect from 1270nm to 1610nm center wavelength's light to dispersion of 1310nm wavelength is less than 1550 nm's dispersion, so the optical module of 1310nm wavelength just can replace 1550 nm's optical module completely as long as can reach 60 KM's transmission distance requirement.

As shown in fig. 3, in this embodiment, the optical path unit 2 further includes a voltage boost circuit 24, the voltage boost circuit 24 is electrically connected to the electrical interface circuit 3 and the photodetector 22, and the photodetector 22 needs to apply a reverse bias voltage of 25 to 50V to start operating, so that the voltage boost circuit 24 needs to be designed for the photodetector 22, and the voltage boost circuit 24 includes a voltage boost chip MAX15059 (denoted by U2 in the figure) and a peripheral circuit, specifically: one end of a first resistor R1 is connected with an RLIM pin of the U2, the other end of the first resistor R1 is grounded, one end of a second resistor R2 is connected with an output pin MOUT pin of the U2, the other end of the second resistor R2 is grounded, one end of a third resistor R3 is connected with an APD pin of the U2, the other end of the third resistor R3 is connected with a photodetector and one end of a first capacitor C1, the other end of the first capacitor C1 is grounded, a fourth resistor R4 and one end of a second capacitor C2 are connected in series and then connected in parallel with one end of a third capacitor C3 to a BIAS pin of the U2, the other end of the C2 and the other end of the C3 are grounded, one end of a first inductor L1 and one end of a diode D1 are connected with an LX pin of the U9, the other end of a first inductor L1 is connected in series with a fourth capacitor C56 and then grounded, and the other end of a diode D1 is connected in series and then.

As shown in fig. 4, according to the above, the utility model provides a pair of 10G SFP +1310nm60KM optical module, its main chip 11 can the direct drive laser 21 through built-in transmission driver chip circuit and give off light, the TX _ OUTN pin of main chip 11 is connected with the one end of fifth electric capacity C5, the other end of fifth electric capacity C5 is connected with TOSA encapsulation LD _ ANODE pin of laser 21, the TX _ OUTP pin of main chip 11 is connected with the one end of sixth electric capacity C6, the other end of sixth electric capacity C6 is connected with TOSA encapsulation LD _ CATHODE pin of laser 21, still be connected with the filter protection circuit that inductance and resistance constitute on the connecting circuit of main chip 11 and laser 21, ensure that laser 21 works more stably and safely. The above-mentioned connection circuit does not need a tec (thermoelectric cooler) control circuit, the circuit is simple, and the cost of the laser 21 is low.

The utility model provides a theory of operation of 10G SFP +1310nm60KM optical module is: MCU 12 passes through I²The C data bus controls and changes the value of the register of the main chip 11, and the parameter required by the light path unit 2 is debugged by changing different values of the register of the main chip 11. The main chip 11 receives the electrical signal sent by the system equipment through the electrical interface circuit 3, the built-in transmitting end driving chip circuit of the main chip 11 drives the laser 21 to send out an optical signal through the received electrical signal, the optical signal is transmitted to the photoelectric detector 22 through optical fiber connection, the photoelectric detector 22 converts the detected optical signal into an electrical signal, the electrical signal is firstly subjected to primary signal amplification through the preamplifier 23, and then is subjected to secondary amplification through the built-in post-amplifier of the main chip 11, and then the electrical signal is sent to the system equipment through the electrical interface circuit 3, such as an exchanger, an optical transceiver and the like.

The above is only the preferred embodiment of the present invention, and the present invention is not limited to the above embodiments, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.

Claims

1. A10G SFP +1310nm60KM optical module is characterized by comprising a circuit unit, an optical path unit and an electrical interface circuit, wherein the circuit unit comprises a main chip and an MCU (microprogrammed control unit), the main chip is electrically connected with the MCU, and the main chip and the MCU are both electrically connected with the electrical interface circuit; the optical path unit comprises a laser, a photoelectric detector and a preamplifier, wherein the laser and the photoelectric detector are respectively electrically connected with the electrical interface circuit, the preamplifier is electrically connected with the photoelectric detector, the photoelectric detector is used for converting a detected optical signal into an electrical signal, and the preamplifier is used for amplifying the electrical signal from the photoelectric detector; the wavelength of the laser is 1310nm, and an emission driving chip circuit and a post-amplifier circuit are integrated in the main chip.

2. The 10G SFP +1310nm60KM optical module of claim 1 wherein the main chip is directly electrically connected with the laser, and the main chip drives the laser to emit light through the emission driving chip circuit.

3. The 10G SFP +1310nm60KM optical module of claim 1 wherein the main chip is directly electrically connected to the pre-amplifier, the main chip further amplifies the electrical signal from the pre-amplifier through a built-in post-amplifier.

4. The 10G SFP +1310nm60KM optical module of claim 1 wherein the electrical interface circuit is a 20PIN interface circuit.

5. The 10G SFP +1310nm60KM optical module of claim 1, wherein the optical path unit further comprises a voltage boosting circuit, the voltage boosting circuit is electrically connected with the electrical interface circuit and the photoelectric detector, and the voltage boosting circuit is used for providing working high voltage for the photoelectric detector.

6. The 10G SFP +1310nm60KM optical module of claim 5 wherein the boost circuit is MAX15059 chips.

7. The 10G SFP +1310nm60KM optical module of claim 1 wherein the laser and photodetector are 10G DFB laser and 10G APD photodetector.