CN210926033U - Back electrode structure and crystalline silicon battery - Google Patents
Back electrode structure and crystalline silicon battery Download PDFInfo
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- CN210926033U CN210926033U CN201922272149.6U CN201922272149U CN210926033U CN 210926033 U CN210926033 U CN 210926033U CN 201922272149 U CN201922272149 U CN 201922272149U CN 210926033 U CN210926033 U CN 210926033U
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000009826 distribution Methods 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000011267 electrode slurry Substances 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 33
- 239000004332 silver Substances 0.000 description 33
- 229910052709 silver Inorganic materials 0.000 description 33
- 239000007788 liquid Substances 0.000 description 26
- 238000007639 printing Methods 0.000 description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 238000007650 screen-printing Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000002003 electrode paste Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The utility model discloses a back electrode structure and crystal silicon battery, back electrode structure, including back electrode body, back electrode body includes electrode zone and fretwork district, the fretwork district is a plurality of, and a plurality of the fretwork district is the matrix arrangement, the crisscross distribution in fretwork district of adjacent row/row. The back electrode structure can reduce the loss of back electrode slurry and improve the photoelectric conversion efficiency.
Description
Technical Field
The utility model belongs to the technical field of the solar cell technique and specifically relates to a back electrode structure and crystal silicon battery are related to.
Background
The number of main grids of the crystalline silicon battery piece gradually evolves from 2BB to 5BB and MBB, and MBB battery pieces are gradually introduced in the market since 2017. On the other hand, the PERC technology has been developed and matured, the MBB and the half-chip technology are stacked, so that the loss of the front silver paste can be reduced, the production cost can be reduced, the power of the assembly can be effectively improved by the stacked half-chip technology, and meanwhile, the occurrence of subfissure of the battery piece can be reduced by designing the multiple main grids, and the fragment rate can be reduced, so that the cost reduction and efficiency improvement project of the MBB battery is indispensable.
In the related technology, a space for reducing the unit consumption of the back silver paste is provided, and the efficiency of the battery piece is ensured to be kept flat or slightly improved while the unit consumption of the back silver paste is reduced by designing a new screen printing drawing. However, the back silver paste for mass production of MBB batteries has high unit consumption, and the cost is still reduced on the premise of not influencing other performances such as efficiency.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, an object of the present invention is to provide a back electrode structure, which can reduce the loss of back electrode paste and improve the photoelectric conversion efficiency.
The second objective of the present invention is to provide a crystalline silicon cell.
In order to solve the problem, the utility model discloses back electrode structure of first aspect embodiment, including the back electrode body, the back electrode body includes electrode zone and fretwork district, the fretwork district is a plurality of, and a plurality of the fretwork district is the matrix arrangement, the crisscross distribution in fretwork district of adjacent row/row.
According to the utility model discloses back electrode structure is through designing the fretwork district on the back electrode body to when printing back electrode thick liquids, at the structural position outside this external position of back electrode and this internal fretwork district department of electrode all print aluminium thick liquids of back electrode, in order to form the aluminium back of the body field, and print silver thick liquid at the electrode zone of electrode body, in order to form silver electrode, consequently, compare in the back electrode structure of not doing the fretwork district, the utility model discloses when printing, need not to print back silver thick liquids at the fretwork district department of back electrode body, thereby make the area of printing back silver thick liquids on the back electrode structure reduce, reduce back electrode thick liquids loss, simultaneously, the reduction of back silver thick liquids printing area also makes the silver thick liquids also reduce to the area of corroding of back electrode structure passivation layer, thereby improve crystal silicon battery effect, and the crisscross distribution in the fretwork district of adjacent row/row, can make back electrode printing effect laminate more, And (4) uniformity.
In some embodiments, a plurality of the hollow-out areas are distributed in any one of an array 4 × 11 and an array 3 × 9.
In some embodiments, the hollow-out area is in any one of a trapezoid shape, a circle shape, an ellipse shape, a square shape and a triangle shape.
In some embodiments, the hollowed-out area is square, and the area of the hollowed-out area is (0.2 x 0.2) cm2。
In some embodiments, the hollowed-out area is square, and the area of the hollowed-out area is (0.3 x 0.25) cm2。
In some embodiments, the width of the back electrode body ranges from 1.6cm to 2.2 cm.
An embodiment of the second aspect of the present invention provides a crystalline silicon cell, which includes a P-type silicon wafer, wherein the back electrode structure of the above-mentioned embodiment is disposed on the P-type silicon wafer.
According to the utility model discloses crystalline silicon battery through adopting the back electrode structure that above-mentioned embodiment provided, can reduce the unit consumption, improves crystalline silicon battery's photoelectric conversion efficiency.
In some embodiments, a plurality of back electrode bodies of the back electrode structure are arranged at corresponding positions of each back electrode grid line of the P-type silicon wafer in a segmented distribution manner.
In some embodiments, the back electrode body at the corresponding position of each back electrode grid line is 6 segments.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic diagram of a back electrode structure according to an embodiment of the present invention;
fig. 2 is a schematic view of a back electrode body according to an embodiment of the present invention;
fig. 3 is a schematic diagram comparing a back electrode body in a BSL product according to an embodiment of the present invention;
fig. 4 is a graph of wet weight data measured with a BSL product according to one embodiment of the present invention;
fig. 5 is a graph comparing measured tensile force with a BSL product according to an embodiment of the present invention;
fig. 6 is a block diagram of a crystalline silicon battery according to an embodiment of the present invention.
Reference numerals:
a back electrode structure 10; a crystalline silicon cell 20;
a back electrode body 1; an electrode area 2; a hollow-out area 3; and a P-type silicon wafer 4.
Detailed Description
Embodiments of the present invention are described in detail below, and the embodiments described with reference to the drawings are exemplary.
In order to solve the above problem, a back electrode structure according to an embodiment of the present invention, which can reduce the loss of back electrode paste and improve photoelectric conversion efficiency, is described below with reference to the drawings. Fig. 1 is a schematic diagram of a back electrode structure according to an embodiment of the present invention. As shown in fig. 1, the back electrode structure 10 includes a back electrode body 1.
Wherein, back electrode body 1 includes electrode zone 2 and fretwork district 3, as shown in fig. 2, be provided with a plurality of fretwork districts 3 on the back electrode structure 10, and, a plurality of fretwork districts 3 are the matrix arrangement, and the fretwork district 3 crisscross distribution of adjacent row/row to can make the aluminium thick liquid of printing laminate more evenly, improve the printing effect, wherein, under the prerequisite that does not influence other performances such as efficiency, for making the loss of back electrode thick liquid reach minimum, can suitably set up the number of fretwork district 3 according to actual conditions, do not restrict to this.
Specifically, as shown in fig. 1, which is a schematic view of a back electrode structure 10, when the back electrode structure 10 is prepared, a pattern of a back electrode screen printing plate adopted by the back electrode structure 10 is opposite to the pattern of the back electrode structure 10 shown in fig. 1, when a back electrode paste is printed, a plurality of meshes are arranged on the back electrode screen printing plate, so that when the back electrode screen printing plate is placed on the back electrode structure 10 to prepare an aluminum back field, aluminum paste can reach the back electrode structure 10 through the meshes arranged on the back electrode screen printing plate, meanwhile, a hollow-out shape corresponding to the position of the hollow-out area 3 is also arranged on the back electrode screen printing plate, and the aluminum paste can also be printed on the back electrode structure 10 through the hollow-out shape of the back electrode screen printing plate to form the hollow-out area 3, so as to prepare the aluminum back field in the blank area of the back electrode structure 10 shown in fig. 1, that is to say, both the area of the back electrode structure 10 except for the back electrode body 1 and the hollow-, and the position corresponding with 2 electrode regions of the back electrode structure 10 in the back electrode screen printing plate, when printing, because the back electrode screen printing plate has sheltering from in this position, and can not see through the aluminium thick liquid, so 2 electrode regions of the back electrode structure 10 do not form the aluminium back of the body field, and then print silver thick liquid in 2 electrode regions, sinter, in order to form the silver electrode, just also only need 2 electrode regions of the back electrode body 1 department print silver thick liquid can, and need not to make 1 whole print silver thick liquid of back electrode body, need not to print silver thick liquid in 3 department of the hollow out area of the back electrode body 1 promptly, thereby reduce the loss of back of the body silver thick liquid.
According to the back electrode structure 10 of the embodiment of the present invention, by designing the hollowed-out area 3 on the back electrode body 1, when printing the back electrode paste, the aluminum paste is printed on the back electrode structure 10 at the position except the back electrode body 1 and at the hollowed-out area 3 inside the back electrode body 1 to form the aluminum back field, and the silver paste is printed on the electrode area 2 of the back electrode body 1 to form the silver electrode, therefore, compared with the back electrode structure without the hollowed-out area, the present invention does not need to print the back silver paste at the hollowed-out area 3 of the back electrode body 1 during printing, and only needs to print the silver paste at the electrode area 2, so that the area of the back electrode structure 10 for printing the back silver paste is reduced, the loss of the back electrode paste is reduced, and simultaneously, the area of the back silver paste printed is reduced, the corrosion area of the silver paste to the passivation layer of the back electrode structure 10 is also reduced, and the efficiency of the crystalline silicon battery is improved, and simultaneously, the utility model discloses set up a plurality of fretwork areas 22 and be the staggered distribution, also make when printing back of the body electrode thick liquids, the printing effect is more evenly laminated.
Further, the utility model discloses the width scope of back electrode body 1 that back electrode structure 10 set up is 1.6cm-2.2cm, can be for 1.6cm or 1.8cm or 2.0cm etc. like back electrode body 1's width, as shown in fig. 3, wherein, scheme 1 and scheme 2 are the schematic diagram that back electrode body 1 width is 2.2cm, compare in the width of current BSL product back electrode body and be 2.4cm, the width design of back electrode body 1 of scheme 1 and scheme 2 shortens 0.2cm relatively, thereby the utility model discloses a shorten back electrode body 1's width, can further reduce the area of printing on the back electrode structure 10, reduce back electrode thick liquids loss.
In an embodiment, for the plurality of hollow areas 3 of the back electrode body 1, any one of the arrays of 4 × 11 array and 3 × 9 array may be distributed, as shown in fig. 3, the scheme 1 is a schematic diagram that the hollow areas 3 are 4 × 11 array distributed, the scheme 2 is a schematic diagram that the hollow areas 3 are 3 × 9 array distributed, further, the hollow areas 3 may be any one of trapezoid, circle, ellipse, square and triangle, for example, the hollow area 3 is square, the utility model discloses the area that can set the square hollow area 3 is (0.2 x 0.2) cm2Or the square hollow-out area 3 has an area of (0.3 x 0.25) cm2。
In the embodiment, in order to print the back electrode paste on the back electrode structure 10 by using the back electrode screen, the size of the back electrode screen is designed to be equal to the size of the back electrode structure 10, so as to reduce the printing adjustment steps which are increased due to the difference between the size of the screen body and the size of the P-type silicon wafer, and reduce the complexity of the aluminum paste printing.
Further, the utility model discloses a guarantee back electrode structure 10's pulling force, when utilizing back electrode half tone preparation back electrode structure 10, the thick scope of membrane of design back electrode half tone is 12.5 mu m-13.5 mu m, if can design the thick 12.5 mu m or 12.6 mu m or 13.0 mu m etc. of membrane of back electrode half tone, compare in the thick 12 mu m that is used for preparing the back electrode half tone of current BSL product, the utility model discloses when printing back electrode structure, through the thickness of its back electrode half tone of slightly increasing, just also slightly increased the thickness of the electrode of printing in back electrode structure 10 to form silver-tin alloy at back silver thick liquid and solder strip, when the subassembly stringer, can guarantee back electrode structure 10's welding pulling force.
The effect of the back electrode structure 10 of the present invention will be described in further detail by the following specific embodiments. In the embodiment, the existing BSL back electrode structure without a hollow portion, the back electrode structure scheme 1 and the back electrode structure scheme 2 are respectively adopted to detect various parameters of the product, such as conversion efficiency, open-circuit voltage, short-circuit current, resistance value, and the like.
TABLE 1
| Categories | Product(s) | Number of segments | Single length of section | Single section width | Hollow out | Total length of | Total area of | Film thickness | Reduction of the |
| BSL | MBB | ||||||||
| 6 | 5 | 2.4 | / | 30 | 72 | 12 | / | ||
| |
|
6 | 5 | 2.2 | 0.2*0.2*4*11 | 30 | 53.85 | 13 | 0％ |
| |
|
6 | 5 | 2.2 | 0.3*0.25*3*9 | 30 | 55.44 | 13 | 15％ |
TABLE 2
| Categories | Number of | Eff. | Uoc | Isc | FF | Rs | Rsh |
| BSL | 100 | 22.078％ | 0.6702 | 9.9382 | 80.98 | 1.62 | 364 |
| |
100 | 22.104％ | 0.6705 | 9.9382 | 81.05 | 1.58 | 376 |
TABLE 3
| Categories | Number of | Eff. | Uoc | Isc | FF | Rs | Rsh |
| BSL | 100 | 21.960％ | 0.6686 | 9.947 | 80.67 | 1.84 | 464 |
| |
100 | 21.973％ | 0.6687 | 9.958 | 80.62 | 1.89 | 486 |
As shown in table 1, experimental scheme 1 designed a single segment of the back electrode body 1 with a length of 5cm and a width of 2.2cm, and each back electrode body 1 included a 4 × 11 array distribution with an area of (0.2 × 0.2) cm2The film thickness of the plurality of hollow-out areas 3 and the back electrode screen printing plate for preparing the back electrode structure 10 is designed to be 13 mu m; experimental protocol 2 a single segment of the back electrode body 1 was designed to have a length of 5cm and a width of 2.2cm, each back electrode body 1 comprising a 3 x 9 array of (0.3 x 0.25) cm area2The plurality of the hollow-out areas 3 with the size and the thickness of the back electrode screen printing plate for preparing the back electrode structure 10 are designed to be 13 μm. In addition, in the back electrode structure of the conventional production line, for example, the back electrode structure without the hollow-out screen is called BSL product, the length of a single section of the back electrode body is 5cm, the width of the single section is 2.4cm, and the thickness of the back electrode screen is designed to be 12 μm. To the utility model discloses two kinds of experimental schemes that list have carried out performance test with current BSL product respectively, as shown in table 2 and table 3, through the contrast, the utility model discloses an experimental scheme 1 and experimental scheme 2's performance data are unanimous basically with the performance data of current BSL product, adopt moreover the utility model discloses a conversion efficiency of the crystal silicon battery of back electrode structure 10 compares in the conversion efficiency of current BSL product, slightly promotes 0.01% ~ 0.02%.
Further, it is respectively right the utility model discloses an experimental scheme 1 and experimental scheme 2 and the wet weight of back silver of current BSL product detect, as shown in FIG. 4, BSL back silver wet weight 30mg, the wet weight of back silver 29mg of scheme 1, the wet weight of back silver 25mg of scheme 2, can find out through data comparison, as shown in Table 1, because the mobility of back silver thick liquids itself is great, the plasticity is poor, when printing, thick liquids can too much see through screen printing on the battery piece, therefore scheme 1 receives the less influence in fretwork district, cause wet weight to reduce the range little, do not reduce in the wet weight of current BSL product; and scheme 2 compares in the wet heavy amplitude reduction of current BSL product about 15%, unanimous basically with the prediction amplitude of reduction, promptly the utility model discloses a back electrode structure 10 can reduce back electrode thick liquids loss, has reached the effect that reduces the wet heavy of back of the body silver.
Further, it is right respectively the utility model discloses an experimental scheme 1 and experimental scheme 2 and the pulling force of current BSL product have been tested, as shown in fig. 5, the pulling force of scheme 1 and 2 back electrode structures 10 of scheme keeps level basically with the pulling force of current BSL product, consequently, the utility model discloses a back electrode structure 10 can effectively guarantee the welding pulling force through the membrane thickness that increases its back electrode half tone slightly.
Summarizing and speaking, according to the utility model discloses a back electrode structure 10, performance through above-mentioned embodiment detects, the utility model discloses a design fretwork district, only need improve the back electrode half tone drawing of preparation back electrode structure 10 promptly, and need not other additional costs, can reduce the unit consumption under other performance premises such as efficiency are not influenced, simultaneously, the utility model discloses a back electrode structure 10, through the design improvement that increases a plurality of fretwork districts 3, and set up the width that shortens back electrode body 1, and set up the membrane thickness that increases back electrode half tone, can obviously reduce the loss of back electrode thick liquids, and compare in current BSL product, can be under the prerequisite of guaranteeing the welding pulling force, promote back electrode structure 10 at conversion efficiency, wet weight aspect's performance, reach and reduce the purpose of this improvement.
The embodiment of the second aspect of the present invention provides a crystalline silicon battery, as shown in fig. 6, the crystalline silicon battery 20 includes a P-type silicon wafer 4, wherein the back electrode structure 10 provided by the above embodiment is provided on the P-type silicon wafer 4.
In the embodiment, every back electrode grid line relevant position of P type silicon chip 4 is provided with back electrode body 1 of a plurality of back electrode structures 10 that the segmentation distributes, for example, the back electrode body of every back electrode grid line can be 6 segmentation distributions, thereby make adjacent two back electrode bodies 1 that are located on same back electrode grid line between have certain distance, this kind of setting up mode not only can reduce the direct contact area of silver thick liquid and P type silicon chip 4, reduce the corruption to the passivation layer, improve conversion efficiency, and can not need the interval position department printing silver thick liquid between adjacent two back electrode bodies 1, therefore, then can further reduce the use amount of silver thick liquid, reduce crystalline silicon battery 20's preparation cost.
According to the utility model discloses crystalline silicon battery 20 through adopting the back electrode structure 10 that above-mentioned embodiment provided, can reduce the unit consumption, reduction in production cost improves crystalline silicon battery 20's conversion efficiency.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (9)
1. The back electrode structure is characterized by comprising a back electrode body, wherein the back electrode body comprises an electrode area and a plurality of hollow areas, the hollow areas are arranged in a matrix manner, and the hollow areas in adjacent rows/columns are distributed in a staggered manner.
2. The back electrode structure of claim 1, wherein the plurality of hollow-out areas are distributed in any one of an array of 4 × 11 and an array of 3 × 9.
3. The back electrode structure of claim 1, wherein the hollow-out area is any one of trapezoid, circle, ellipse, square and triangle.
4. The back electrode structure of claim 1, wherein the hollowed-out area is square, and the area of the hollowed-out area is (0.2 x 0.2) cm2。
5. The back electrode structure of claim 1, wherein the hollowed-out area is square, and the area of the hollowed-out area is (0.3 x 0.25) cm2。
6. The back electrode structure of claim 1, wherein the back electrode body has a width in the range of 1.6cm to 2.2 cm.
7. A crystalline silicon cell comprising a P-type silicon wafer having the back electrode structure of any one of claims 1-6 disposed thereon.
8. The crystalline silicon cell of claim 7, wherein a plurality of back electrode bodies of the back electrode structure are arranged at corresponding positions of each back electrode grid line of the P-type silicon wafer in a segmented manner.
9. The crystalline silicon cell of claim 8, wherein the back electrode body corresponding to the corresponding position of each back electrode grid line is 6 segments.
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|---|---|---|---|
| CN201922272149.6U CN210926033U (en) | 2019-12-17 | 2019-12-17 | Back electrode structure and crystalline silicon battery |
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|---|---|---|---|
| CN201922272149.6U CN210926033U (en) | 2019-12-17 | 2019-12-17 | Back electrode structure and crystalline silicon battery |
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| CN210926033U true CN210926033U (en) | 2020-07-03 |
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Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |
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