CN210894759U - Reflector capable of inhibiting surface dust and ultra-short-focus projector - Google Patents
Reflector capable of inhibiting surface dust and ultra-short-focus projector Download PDFInfo
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- CN210894759U CN210894759U CN201921552821.0U CN201921552821U CN210894759U CN 210894759 U CN210894759 U CN 210894759U CN 201921552821 U CN201921552821 U CN 201921552821U CN 210894759 U CN210894759 U CN 210894759U
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Abstract
The utility model discloses a can restrain speculum and ultrashort burnt projector of surface dust, it includes the basement and sets up medium reflecting mirror and ITO membrane on the basement. The substrate is optical plastic or optical glass, and the reflector consists of a titanium dioxide film and a silicon dioxide film. The ITO film has a thickness of about 30nm and is provided at the outermost layer of the reflector in the air. The thickness of the ITO film is monitored to be a maximum reflectivity value by a reflection pole method. And closing the vacuum chamber to bake after the film coating is finished, cooling for 40 minutes, annealing, and then exhausting. The ultra-short focal length mirror coated with the ITO film has excellent performance of inhibiting surface dust. Thereby preventing the accumulation of dust on the surface of the mirror in the optical system for ultra-short focus projection display as much as possible.
Description
Technical Field
The utility model relates to an optical film's technical field, concretely relates to can restrain speculum and ultrashort burnt projector of surface dust.
Background
The color gamut coverage rate of laser display in a projection system can reach more than 90% of the color space which can be identified by human eyes, is more than twice of the color gamut coverage rate of the traditional display, thoroughly breaks through the defect of the color gamut space of the display technology of the first three generations, and is the mainstream direction of the display technology in the future. Since the conventional projection system has problems of image interference, space limitation, and the like, and the reduction of the projection ratio is undoubtedly the most effective way to solve the problem at present, the design and application of the ultra-short-focus system embody its importance.
The application and the function of the reflector in the ultra-short focus are as follows: the ultra-short focus projection system takes red, green and blue laser as an illumination light source, the three-color laser enters a display chip through a lens, a DM filter (medium light splitting filter), a compound eye, a PBS (polarization beam splitter prism) and the like, emergent light of the display chip enters a projection lens, and the emergent light of the projection lens is reflected by a reflector and an aspheric surface reflecting bowl and then irradiates a desktop. The picture projected by the lens in the ultra-short focus projection system can be displayed in the reflector, the 45-degree inclination angle of the reflector can reflect the whole imaging picture to the non-spherical reflection bowl, and the light rays are reflected by the reflection bowl and then project the appointed picture on the desktop.
The important reflecting mirror in the ultra-short-focus system has the problem of obvious surface dust accumulation in the using process of the system, thereby not only reducing the image brightness, but also reducing the image definition and influencing the imaging effect. One of the important reasons for the deposition of dust on the mirror surface is the presence of electrostatic accumulation on the mirror surface. Since optical glass or optical plastic substrates, and the thin film materials of mirrors, titanium dioxide and silicon dioxide, are dielectric materials, or non-conductive insulating materials, the surfaces of these materials are highly susceptible to electrostatic accumulation effects. This daily unnoticeable build-up of static electricity can constantly attract dust from the air to deposit on the mirror surfaces, resulting in a reduction in the reflectivity and resolution of the mirror, and in turn, a reduction in not only the brightness of the image, but also the sharpness of the image.
SUMMERY OF THE UTILITY MODEL
In order to overcome the problem that the dust of speculum surface gathered, the utility model provides a can restrain speculum and the ultrashort burnt projector of surperficial dust.
The utility model discloses try to introduce the speculum to "antistatic"'s conductive film, prevent the static effect of gathering to reach the problem that the suppression is gathered because of the reflector surface dust that static effect of gathering leads to.
The utility model provides a can restrain speculum and ultrashort burnt projector of surface dust. The ITO conductive film has the advantages of good conductivity, high visible light transmittance, good processability and the like, and is widely applied to the fields of smart phones, tablet computers, display devices and the like. The ITO conductive film can inhibit dust accumulation on the surface of the reflector due to electrostatic accumulation effect without obviously influencing the reflectivity of the reflector.
The utility model has the following conception: first, the electrostatic build-up is mainly due to the lack of conductivity of the mirrors. Since the substrate of the mirror is usually optical glass or optical plastic and the thin film of the mirror surface is usually a dielectric material, all of these substrate materials and thin film materials are good insulators, it is naturally understood that the mirror surface forms a static charge accumulation. Second, it is the most effective method to make the mirror conductive, and the simplest method to make the mirror conductive is to plate a metal film. However, metal films have a high absorption and a low reflectivity, e.g., about 9% for the most commonly used aluminum films, the visible region, i.e., the absorptionThe reflectivity cannot exceed 91%, and the firmness, surface and stability are insufficient, so that the semiconductor conductive film is selected as an optimal scheme. The semiconductor film has a larger absorption than the dielectric film but a much smaller absorption than the metal film, and the film has satisfactory robustness and stability. Again, many alternative semiconductor films include indium oxide (In)2O3) Film, tin oxide (SnO)2) Films, zinc oxide (ZnO) films or indium tin oxide (In)2O3·SnO2) Films, and the like. Studies on these films have shown that indium tin oxide films are most suitable in view of a combination of conductivity, low absorption and high transmission, stability and ease of manufacture. Indium Tin Oxide film is actually a Tin-doped Indium Oxide film with a doping ratio of Tin Oxide to Indium Oxide of 9: 91, and this film is often referred to simply as an ITO film (abbreviation of Indium Tin Oxide). The ITO film has an energy band width of 3.5eV or more and a carrier electron density of 1020～1021cm-3The mobility of the material reaches 10-30 cm3·V-1·s-1The specific substance group (2). Since the average energy of visible light photons is about 3.1eV, the thin film material cannot cause intrinsic excitation under the irradiation of visible light, and therefore, the thin film material has high transmittance in the visible light range. During the deposition of the thin film, the process conditions have a significant effect on the visible light transmittance. The visible light transmittance of ITO thin films prepared with indium tin alloy targets at low or room temperature is generally low. The reason is mainly because black suboxides InO and SnO are generated, and the thin film shows the characteristics of metal. The low-valence oxide can be further oxidized to generate high-valence oxide through heat treatment or high-temperature deposition, and the transmittance of the film is obviously improved.
The ITO film in the transparent conductive oxide film has high visible light transmittance (about 90%) and infrared reflectivity, and low resistivity (1 × 10)-4cm～4×10-4cm), abrasion resistance, and good mechanical strength and chemical stability. In order to reduce the absorption of the ITO film as much as possible and increase the reflectivity of the reflective film, the utility model limits the film thickness of the ITO film to about 30 nm. Moreover, in order to further reduce the absorption of the ITO film and consider the convenience of preparation, the method has the advantages of reducing the absorption of the ITO film and improving the preparation efficiencyIn the utility model, the ITO film is arranged at the outermost layer of the reflecting mirror film system close to the air, namely the reflecting mirror film system is S | (HL)10H'(0.78L0.78H)7In 0.78L0.78(H 'ITO) | Air, the outermost high refractive index film H' of the film system, where S represents the substrate and H is high refractive index titanium dioxide (TiO), and the ITO film jointly synthesize 1/4 wavelength2) Film, L is silicon dioxide (SiO) with low refractive index2) Film, H 'and H' are both high refractive index film layers TiO the same as H2However, since the thickness is different, it is represented by H' or H "to distinguish them. (HL)10Film thickness control wavelength of lambda1＝650nm，(0.78L0.78H)7The film thickness control wavelength of 0.78L0.78 (H' ITO) is lambda2507nm, and the film thickness control wavelength of H' is lambda3＝(λ1+λ2) 578.5nm, all layers are 1/4 wavelength thick with specific control wavelength, so the thickness of each layer can be monitored by photoelectric extremum control. Then, because the resistivity depends on the substrate temperature during film coating to a certain extent, the higher the substrate temperature is, the lower the resistivity is, in order to reduce the absorption and increase the conductivity as much as possible and reduce the resistivity, the ITO film is subjected to evaporation under the conditions of a base temperature of 300 ℃, an oxygen pressure of 150sccm and an evaporation rate of 2 nm/min, and the thickness of the ITO film is monitored to a maximum value of the reflectivity by a reflection electrode method so as to accurately achieve the thickness required by the ITO. And finally, in order to improve the current carrier concentration of the ITO film and further improve the conductivity of the ITO film, closing the vacuum chamber for baking after the film coating is finished, cooling for 40 minutes, annealing, and then deflating to finish the film coating.
The utility model provides a technical scheme that its technical problem adopted is:
a reflector capable of inhibiting surface dust comprises a substrate and a dielectric reflector film layer arranged on the substrate, wherein an indium tin oxide film (ITO film) is arranged on one side, close to air, of the dielectric reflector film layer, and the dielectric reflector film layer is composed of high-refractive-index films and low-refractive-index films which are alternated.
The indium tin oxide film is a film composed of tin oxide and indium oxide in a mass ratio of 9: 85-95, more preferably, the indium tin oxide film is a film composed of tin oxide and indium oxide in a mass ratio of 9: 89-93, and most preferably, the indium tin oxide film is composed of tin oxide and indium oxide in a mass ratio of 9: 91.
The substrate is optical plastic or optical glass.
The high refractive index film is a titanium dioxide film, and the low refractive index film is a silicon dioxide film.
The dielectric reflector film layer is 30-45 layers, the indium tin oxide film layer is 1 layer, and the total number of the indium tin oxide film layers is 31-46 layers. More preferably, the dielectric reflector film layer is 35-39 layers, the indium tin oxide film layer is 1 layer, and the total number of the indium tin oxide film layers is 36-40 layers. Most preferably, the dielectric mirror film layer is 37 layers, the indium tin oxide film layer is 1 layer, and the total number is 38 layers.
From the substrate to the outside, the 1 st, 3 rd, 5 th, 7 th, 9 th, 11 th, 13 th, 15 th, 17 th and 19 th layers are titanium dioxide films with the thickness of 67.99nm, and the 2 nd, 4 th, 6 th, 8 th, 10 th, 12 th, 14 th, 16 th, 18 th and 20 th layers are silicon dioxide films with the thickness of 111.57 nm;
the 21 st layer is a titanium dioxide film with the thickness of 67.99 nm;
the 22 th, 24 th, 26 th, 28 th, 30 th, 32 th, 34 th and 36 th layers are silicon dioxide films, the 23 th, 25 th, 27 th, 29 th, 31 th, 33 th, 35 th and 37 th layers are 53.07nm, titanium dioxide films, the thicknesses of the layers are 87.02nm, the 38 th layer is an indium tin oxide film, and the thickness of the layer is 30 nm.
The reflecting mirror is composed of a titanium dioxide film with a high refractive index and a silicon dioxide film with a low refractive index, the number of the reflecting mirror layers is 38, wherein the 37 th high refractive index film and the 38 th ITO film are synthesized into a quarter wavelength;
the doping ratio of the ITO film (indium tin oxide film) is 9: 91.
Further, the thickness of the ITO film is about 30 nm.
Further, the ITO film is arranged on the side, close to the air, of the dielectric reflector film layer, namely the outermost position close to the air.
An ultra-short-focus projector adopts the reflector which can inhibit surface dust. Thereby preventing the accumulation of dust on the surface of the mirror in the optical system for ultra-short focus projection display as much as possible.
A method for preparing a reflector capable of inhibiting surface dust comprises the following steps:
a dielectric reflector film layer is firstly prepared on a substrate, and then an indium tin oxide film (ITO film) is evaporated to obtain the reflector capable of inhibiting surface dust.
The conditions for evaporating the indium tin oxide film (ITO film) are as follows: the evaporation is carried out at a substrate temperature of 250-350 ℃, an oxygen pressure of 100-200 sccm and an evaporation rate of 1-3 nm/min, more preferably at a substrate temperature of 280-320 ℃, an oxygen pressure of 130-170 sccm and an evaporation rate of 1.8-2.2 nm/min, and most preferably at a substrate temperature of 300 ℃, an oxygen pressure of 150sccm and an evaporation rate of 2 nm/min.
In order to improve the carrier concentration of the ITO film and further improve the conductivity of the ITO film, the vacuum chamber is closed to bake after the indium tin oxide film (ITO film) is evaporated, the cooling is carried out for 30-50 minutes, the annealing treatment is carried out, then the gas is discharged, preferably, the vacuum chamber is closed to bake after the indium tin oxide film (ITO film) is evaporated, the cooling is carried out for 35-45 minutes, the annealing treatment is carried out, then the gas is discharged, most preferably, the vacuum chamber is closed to bake after the indium tin oxide film (ITO film) is evaporated, the cooling is carried out for 40 minutes, the annealing treatment is carried out.
Because the 37 th layer of titanium dioxide film with high refractive index and the 38 th layer of ITO film are combined into a quarter wavelength, the thickness of the ITO film can be monitored to the maximum value of the reflectivity by a reflection pole method so as to ensure that the thickness of the ITO film is about 30 nm.
In order to obtain good ITO thin film conductivity, different film thicknesses and resistivity are mainly controlled, and mature film system design and a film coating process are important means for accurately controlling the film thickness and the resistivity. The thickness of the film layer can be accurately simulated through the design of the film system, and the real realization of the simulation is that the deposition rate and the deposition time are controlled through a mature film coating process to obtain the specified film thickness.
Compared with the prior art, the beneficial effects of the utility model are that:
according to the current projection market, the laser projector is a future development trend to replace the traditional mercury lamp projector, and the ultra-short-focus projector has the advantages of not only saving space, but also being convenient for the user to operate by gestures and watch pictures when being projected on a desktop. The ultra-short-focus projection has a very good prospect in future projection markets, particularly in places such as education, offices and the like.
The dust-proof treatment of the reflector of the ultra-short-focus projector is an important problem which needs to be solved, because the reflector used in the imaging process can continuously gather dust, which has serious influence on the finally projected picture. To address this problem, the existing solutions are to seal the entire structure and reduce the intrusion of external dust. However, the ultra-short-focus projector needs to be cooled by air, and thus cannot be completely sealed. In addition, no matter the projector is blown or exhausted, air flows inside and outside the ultra-short-focus projector and brings dust into the projector. If static electricity is accumulated on the surface of the reflector, dust can be continuously accumulated on the surface of the reflector, and the final projection picture is influenced.
The utility model discloses a mode of carrying out the ITO coating film on the speculum surface avoids static to gather to solve the problem of dust gathering. The dust removal device is simple and effective in practical application, does not need to be connected with an external structure, does not influence other parts of the ultra-short-focus projector, and completely depends on the structure and relevant characteristics of the dust removal device to achieve the purpose of dust removal.
Drawings
FIG. 1 is a schematic diagram of an ITO film of an ultra-short-focus reflector capable of suppressing surface dust according to the present invention;
FIG. 2 is a reflectance spectroscopy curve for a prior art mirror used at a 45 angle;
FIG. 3 is a reflectance spectroscopy curve of the mirror of the present invention when used at a 45 ° angle;
FIG. 4 is a film thickness control curve of the outermost H "film and ITO film of the ultra-short-focus reflector of the present invention.
Detailed Description
Fig. 1 is a schematic diagram of an ITO film of an ultra-short focus mirror capable of suppressing surface dust. In an ultra-short-focus projection display system, the reflecting mirror usually comprises a plane reflecting mirror, an aspheric reflecting mirror and the like, but no matter the reflecting mirror is a plane reflecting mirror or an aspheric reflecting mirror, as shown in fig. 1, the reflecting mirror capable of suppressing surface dust comprises a substrate 1 and a dielectric reflecting mirror film layer arranged on the substrate 1, an indium tin oxide film 4(ITO film) is arranged on one side of the dielectric reflecting mirror film layer close to air, and the dielectric reflecting mirror film layer is formed by alternately forming a titanium dioxide film 2 with a high refractive index and a silicon dioxide film 3 with a low refractive index. The indium tin oxide film 4 is composed of tin oxide and indium oxide at a mass ratio of 9: 91. The substrate 1 is an optical plastic or an optical glass. The membrane system structure of the utility model is basically the same, which is specifically as follows: s | (HL)10H'(0.78L0.78H)70.78L0.78 (H' ITO) | Air, in the film system structure, S represents a substrate, H is titanium dioxide (TiO) with high refractive index2) Film, L is silicon dioxide (SiO) with low refractive index2) Film, H 'and H' are high refractive index TiO of the same material and different thickness as H2And (3) a membrane. Because the reflector is used in large angle, the reflecting band is narrowed because the reflecting band of p-polarized component is narrowed, at this time, it is impossible to cover the visible light region by using a reflecting film stack, so that it is necessary to connect at least two reflecting film stacks in series to attain the goal of said ultra-short focal reflector reflecting band. In the above film system structure, (HL)10Is a first reflective film stack having a film thickness control wavelength of λ1650nm, high reflection at the long wavelength end of the visible region is realized; (0.78L0.78H)70.78L0.78 (H' ITO) as the second reflective film stack, and its film thickness is controlled at wavelength λ2507nm, high reflection at the short wave end of the visible light region is realized; however, since only the two reflective film stacks are connected in series and a transmission band occurs in the connection region, it is necessary to insert a high refractive index film layer H' having a film thickness controlled to have a wavelength equal to the average wavelength of the two reflective film stacks, i.e., λ3＝(λ1+λ2) And/2 is 578.5 nm. It can be seen that since all layers are 1/4 wavelength thick at a particular control wavelength, the thickness of each layer can be monitored by photoelectric extremum control. The last remaining problem is that of being left emptyThe outermost high-refractive-index H' film of the gas and the ITO film are jointly synthesized into the 1/4 wavelength film, so that the position in the film system structure is determined for the ITO film, and at the position, the ITO film not only has the optimal effect of inhibiting dust agglomeration, but also has little influence on the reflectivity, and more importantly, the preparation is simple and convenient. Specifically, after optimization, the dielectric mirror film layer is 37 layers, the indium tin oxide film 4 is 1 layer, and the total number is 38 layers. From the substrate 1 to the outside, the 1 st, 3 rd, 5 th, 7 th, 9 th, 11 th, 13 th, 15 th, 17 th and 19 th layers are titanium dioxide films 2 with the thickness of 67.99nm, and the 2 nd, 4 th, 6 th, 8 th, 10 th, 12 th, 14 th, 16 th, 18 th and 20 th layers are silicon dioxide films 3 with the thickness of 111.57 nm; the 21 st layer is a titanium dioxide film with the thickness of 67.99 nm; the 22 nd, 24 th, 26 th, 28 th, 30 th, 32 th, 34 th and 36 th layers are silicon dioxide films 3, the 23 th, 25 th, 27 th, 29 th, 31 th, 33 th, 35 th and 37 th layers are 53.07nm, titanium dioxide films 2, the thicknesses of the layers are 87.02nm, the 38 th layer is an indium tin oxide film 4, and the thickness of the layer is 30 nm.
Fig. 2 is a reflectance spectroscopy curve for a prior art mirror used at a 45 deg. angle. Only in terms of the ultra-short focal reflector itself, the reflector structure of the prior art is not very different from the reflector structure of the present invention, mainly by the high refractive index lambda of the outermost air side2/4TiO2Layer is changed into lambda2/4(TiO2+ ITO) layer(s) of a metal oxide,
fig. 3 is a reflectance dispersion curve of the mirror of the present invention when used at an angle of 45 °. Comparing fig. 2 and fig. 3, it can be seen that the reflection bandwidth and the reflectivity of the two structures are actually different very little, under the condition of the same number of layers and the same incident angle, the average reflectivity of the reflector in the wavelength range of 430nm to 660nm of the prior art of fig. 2 is 99.8%, and the average reflectivity of the reflector in the wavelength range of 430nm to 660nm of fig. 3 of the utility model is 98.8%, and this small difference comes from the ITO film because the refractive index of the ITO film is more than that of TiO film2Film height at wavelength λ2＝507nm，TiO2The refractive index of the film is about 2.39, and the refractive index of the ITO film is only 1.89, which reduces the average refractive index of the outermost quarter-wave film on the air side, and the higher the refractive index of the outermost quarter-wave film on the air side is, the greater the contribution to the improvement of the reflectivity is, which is the plane of the reflector of the present inventionThe reason why the average reflectance is slightly decreased. This means that the utility model discloses trade the conductivity of speculum with sacrificing 1% average reflectivity, obtained the effect that can automatic suppression speculum dust coalescence, eliminated a very big trouble problem in the speculum use. Compared with a common reflector, the reflector for ultra-short focus projection, whether a plane reflector or an aspheric reflector, is mainly characterized in that a reflection band needs to cover a visible light region, and the used incidence angle is larger; furthermore, because they are all located in the imaging optical path, the requirements for the aberration and cleanliness of the reflecting surface are very high, and the reflecting mirror is very large, so the manufacturing difficulty is large, the price is high, and this also explains the value of the ultra-short focus reflecting mirror of the utility model.
It has been pointed out that since all the film layers of the ultra-short-focus mirror of the present invention are 1/4 wavelength films with specific control wavelength, the thickness of each film layer can be easily monitored by the photoelectric extremum control method, but the outermost high refractive index film by air is now the 1/4 wavelength film composed of the H "film with high refractive index and the ITO film, which brings difficulty to the thickness control of the H" film and the ITO film. FIG. 4 is a film thickness control curve of the H' film and the ITO film during the preparation of the ultra-short focus reflector of the present invention. H (TiO) if not coated with ITO film2) Optical thickness of the layer should be lambda2126.75nm at λ2＝507nm，TiO2The refractive index of the film was about 2.39, so the actual physical thickness was 53 nm; it is now necessary to synthesize 1/4 wavelength film by combining H 'film and ITO film, and calculate H' (TiO) when ITO film thickness is 30nm2) The physical thickness of the film was also 30nm, so the reflectance of the H "film was calculated to be 18.9%. Thus, only need to replace K before plating9The surface reflectivity of the monitoring sheet is 4.2 percent, and TiO is evaporated2At a control wavelength lambda2When the reflectance gradually increased from 4.2% to 18.9%, the thickness of the H "film reached just 30nm, and the deposition was stopped immediately. Because (H' + ITO) jointly synthesizes lambda2And a layer of/4, so that the physical thickness of the ITO film is 30nm only by controlling the reflectivity of the ITO film to reach a maximum value of 24 percent, and the whole evaporation process is completed. Depositing indium tin oxide film (ITO film)The conditions are as follows: the evaporation was carried out using a substrate temperature of 300 deg.C, an oxygen pressure of 150sccm and a stable evaporation rate of 2 nm/min. In order to improve the carrier concentration of the ITO film and further improve the conductivity of the ITO film, the vacuum chamber is closed to bake after the indium tin oxide film 4(ITO film) is evaporated, the ITO film is cooled for 40 minutes, annealing treatment is carried out, and then air is discharged.
The resistivity of the outermost layer of the reflector prepared by the method of the utility model is 3 × 10-4Omega cm or less, the conductivity is better, has destroyed the static accumulation effect, therefore has excellent characteristic of inhibiting the surface dust. In addition, the average reflectivity of the reflector in the wavelength range of 430nm to 660nm is 98.8%, and the reflector has important application value in projection display technology and various optical systems.
Claims (7)
1. A reflector capable of inhibiting surface dust comprises a substrate and a dielectric reflector film layer arranged on the substrate, and is characterized in that an indium tin oxide film is arranged on one side, close to air, of the dielectric reflector film layer, and the dielectric reflector film layer is composed of high-refractive-index films and low-refractive-index films which are alternated.
2. A mirror according to claim 1, wherein the substrate is an optical plastic or an optical glass.
3. The mirror according to claim 1, wherein the high refractive index film is a titanium dioxide film, and the low refractive index film is a silicon dioxide film.
4. The mirror according to claim 1, wherein the dielectric mirror film layer comprises 30 to 45 layers, and the indium tin oxide film layer comprises 1 layer, for a total of 31 to 46 layers.
5. The mirror according to claim 1, wherein the dielectric mirror film layer comprises 35 to 39 layers, and the indium tin oxide film layer comprises 1 layer, for a total of 36 to 40 layers.
6. A surface dust suppressing mirror as claimed in claim 1, wherein said dielectric mirror film layer is 37 layers, said indium tin oxide film layer is 1 layer, and a total of 38 layers;
from the substrate to the outside, the 1 st, 3 rd, 5 th, 7 th, 9 th, 11 th, 13 th, 15 th, 17 th and 19 th layers are titanium dioxide films with the thickness of 67.99nm, and the 2 nd, 4 th, 6 th, 8 th, 10 th, 12 th, 14 th, 16 th, 18 th and 20 th layers are silicon dioxide films with the thickness of 111.57 nm;
the 21 st layer is a titanium dioxide film with the thickness of 67.99 nm;
the 22 th, 24 th, 26 th, 28 th, 30 th, 32 th, 34 th and 36 th layers are silicon dioxide films, the 23 th, 25 th, 27 th, 29 th, 31 th, 33 th, 35 th and 37 th layers are 53.07nm, titanium dioxide films, the thicknesses of the layers are 87.02nm, the 38 th layer is an indium tin oxide film, and the thickness of the layer is 30 nm.
7. An ultra-short-focus projector, characterized in that the reflector capable of suppressing surface dust according to any one of claims 1 to 6 is used.
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