CN210839513U - High-speed high-voltage electronic switch - Google Patents
High-speed high-voltage electronic switch Download PDFInfo
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- CN210839513U CN210839513U CN201922454894.2U CN201922454894U CN210839513U CN 210839513 U CN210839513 U CN 210839513U CN 201922454894 U CN201922454894 U CN 201922454894U CN 210839513 U CN210839513 U CN 210839513U
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Abstract
The utility model relates to a high-speed high-voltage electronic switch. The circuit comprises an isolation driving circuit, a voltage equalizing circuit and an auxiliary power supply isolation circuit. The utility model discloses mainly be applied to high energy laser crystal's the function of rolling back, can guarantee next time before high energy laser beam comes, in the twinkling of an eye that discharges the less high-pressure energy in the crystal, can not puncture or burn out high-voltage switch.
Description
Technical Field
The utility model relates to the technical field of circuits, especially a high-speed high-voltage electronic switch.
Background
In the prior art, when a high-energy laser beam irradiates on a crystal, the crystal changes the wavelength of the laser or other oscillation conditions due to electrical effect, the crystal is charged with a certain amount of energy by a crystal high-voltage circuit, and in order to ensure the next time the high-energy laser beam is used for temporarily exciting the accuracy, a smaller amount of high-voltage energy in the crystal needs to be discharged. One end of the crystal needs to be quickly connected to a low potential end, a high-voltage switch is needed because the high voltage in the crystal is generally about 5KV direct-current high voltage, and a faster switching speed is needed in order to ensure that the high-voltage switch is not broken down or burnt at the moment of high-voltage discharging.
SUMMERY OF THE UTILITY MODEL
In order to achieve the above object, the present invention provides a high-speed high-voltage electronic switch, which comprises an isolation driving circuit, a voltage-sharing circuit, and an auxiliary power isolation circuit;
the isolation driving circuit comprises at least one group of sub-circuits, and each group of sub-circuits comprises 3 sub-circuits with the same structure; the structure of the sub-circuit is as follows: the pulse shaping circuit comprises a current control unit, a pulse transformer, a pulse shaping unit and a fourth high-voltage power switch transistor; the input end of the current control unit is connected with the DVCC, the output end of the current control unit is connected with a main winding of the pulse transformer, the input end of the pulse shaping unit is connected with a secondary winding of the pulse transformer bank, and the output end of the pulse shaping unit is connected with a fourth high-voltage power switch transistor; the fourth high-voltage power switch transistor is connected with the voltage-sharing circuit; the input end and the output end of each sub-circuit are connected in series;
the number of the voltage-sharing circuits is in one-to-one correspondence with the number of the isolation driving circuit sub-circuits, and the voltage-sharing circuits are connected with the output ends of the corresponding sub-circuits;
the output end of the auxiliary power supply isolation circuit is connected with the input end of the isolation driving circuit and used for converting the input direct current into stable direct current required by the system work.
Further, the current control unit comprises a thirty-first resistor, an eighth photoelectric coupler, a twenty-eighth resistor and a sixth diode; one end of the thirty-first resistor is connected to the DVCC, and the other end is connected to the input photodiode anode of the eighth photocoupler; and one end of the twenty-eighth resistor is connected to the AVCC and the homonymous end of the main winding of the pulse transformer.
Further, the structure of the pulse shaping unit is as follows: the circuit comprises a third diode, a fifth diode, a thirty-second resistor, a thirty-third resistor, a twenty-fifth resistor, a twenty-fourth resistor and a second diode; the dotted end of a primary winding and a secondary winding of the pulse transformer are connected to the anode of a third diode, and the other end of the secondary winding is connected to the anode of a fifth diode; the cathode of the third diode is connected to the cathode of the fifth diode, the cathode of the second diode and one end of a twenty-fifth resistor, and the thirty-second resistor is connected with the fifth diode in parallel; the anode of the second diode is connected to one end of a twenty-fourth resistor, the other end of the twenty-fourth resistor is connected to the other end of the twenty-fifth resistor and is connected to the grid electrode of the high-voltage semiconductor power tube, and the thirty-third resistor is connected across the grid electrode and the source electrode of the high-voltage semiconductor power tube.
Further, the level shift circuit includes a sixth resistor, a seventh sliding rheostat, a CX1 capacitor, a tenth resistor, a third B operational amplifier, an eighth resistor, a fourth a operational amplifier, a fourth B operational amplifier, an eighteenth resistor, a fifteenth sliding rheostat, an eleventh resistor, a third resistor, a first high-frequency transformer, a first diode, a fifth capacitor, a fifth resistor, and a fourth resistor; the anode of the DX1 diode is connected to the output end of the third A operational amplifier, the cathode is connected to one end of a CX1 capacitor and one end of a tenth resistor, the other end of the CX1 capacitor is connected to AGND, the other end of the tenth resistor is connected to the inverting end of the third B operational amplifier, the non-inverting end of the third B operational amplifier is connected to the sliding end of a seventh sliding rheostat, one fixed end of the seventh sliding rheostat is connected to AGND, the other fixed end of the seventh sliding rheostat is connected to one end of a sixth resistor, and the other end of the sixth resistor is connected to AVCC; the output end of the third B operational amplifier is connected to one end of an eighth resistor, the other end of the eighth resistor is connected to the in-phase end of a fourth A operational amplifier, the inverting end of the fourth A operational amplifier is connected to one end of a twelfth resistor, the other end of the twelfth resistor is connected to the inverting end and the output end of the fourth B operational amplifier, and the in-phase end of the fourth B operational amplifier is connected to one end of an eighteenth resistor, one fixed end of a fifteenth sliding rheostat and one end of a tenth resistor; the other end of the eighteenth resistor is connected to the AVCC, the other fixed end of the fifteenth sliding rheostat is connected to AGND, and the other end of the tenth resistor is connected to one end of the eleventh capacitor and the collector of the second diode; the output end of the fourth A operational amplifier is connected to one end of an eleventh resistor, the other end of the eleventh resistor is connected to the base level of a first N-type triode, the emitting electrode of the first N-type triode is connected to AGND, the collecting electrode of the first N-type triode is connected to one end of a primary winding of a first high-frequency transformer, the same-name end of the primary winding of the first high-frequency transformer is connected to one end of a third resistor, the other end of the third resistor is connected to AVCC, the same-name end of a secondary winding of the first high-frequency transformer is connected to the anode of a first diode, the cathode of the first diode is connected to one end of a fifth capacitor and one end of a fourth resistor, and the other end of the; and the other end of the fourth resistor is connected to the grid electrode of the third high-voltage semiconductor power tube.
Furthermore, the auxiliary power supply isolation circuit is built by a 5V-LDO conversion circuit.
Furthermore, the voltage-sharing circuit is a high-voltage semiconductor power tube voltage-sharing circuit and is connected with the output end of the isolation driving circuit; the power supply comprises a twenty-first resistor, a third high-voltage semiconductor power tube and a thirty-seventh current sampling resistor; the connection relationship is as follows: the drain electrode of the third high-voltage semiconductor power tube is connected to the drain electrode of the fourth high-voltage semiconductor power tube, the source electrode of the third high-voltage semiconductor power tube is connected to one end of a thirty-seventh current sampling resistor, and the other end of the thirty-seventh current sampling resistor is connected to the source electrode of the fourth high-voltage semiconductor power tube.
Furthermore, the voltage-sharing circuit comprises a resistor, and two ends of the resistor are respectively connected with the drain electrode and the grid electrode of the fourth high-voltage semiconductor power tube.
The input end of the signal isolation and conversion circuit is connected with the output end of the voltage-sharing circuit of the third high-voltage semiconductor power tube, and the signal isolation and conversion circuit comprises an instrument amplifier, a series-connection quartz crystal oscillation circuit and a level conversion circuit which are sequentially connected; the input end of the instrument amplifier is used as the input end of the signal isolation and conversion circuit, and the level conversion circuit is used as the output end of the signal isolation and conversion circuit.
The utility model has the advantages that:
the utility model discloses accomplish absolute voltage-sharing, the input signal of third high voltage semiconductor power tube among each equalizer circuit and exported highly compressed multistage isolation. In the isolation driving circuit, a plurality of groups of high-voltage withstand voltages can be freely connected in series and can also be freely connected in parallel to improve the current flowing capacity. The crystal switch is ensured not to be broken down or burnt out at the moment of high-voltage discharge. The utility model discloses not only can be applied to high energy laser crystal, can also be applied to the partial pressure in the high pressure and detect the collection system.
Drawings
Fig. 1 is a connection diagram of an isolation driving circuit and a voltage equalizing circuit.
Fig. 2 is an auxiliary power isolation circuit.
Fig. 3 is a signal isolation switching circuit.
Detailed Description
The present invention will be described with reference to fig. 1 to 3.
The utility model provides a high-speed high-voltage electronic switch, include: the circuit comprises an isolation driving circuit, a voltage equalizing circuit and an auxiliary power supply isolation circuit. The following are described separately.
In the figure:
AVCC: high potential end of analog part power supply
AGND: low potential terminal of analog part power supply
DVCC: high potential terminal of logic part power supply
DGND: low potential terminal of logic part power supply
J1: high potential input end of external low voltage DC power supply
J2 external control signal low input terminal
J3: low potential input end of external low voltage DC power supply
J4: external high voltage DC power input terminal
J6: external high voltage DC power supply output terminal
J5: high input end of external control signal
First, isolating drive circuit
The isolation driving circuit comprises at least one group of sub-circuits, and each group of sub-circuits comprises 3 sub-circuits with the same structure. Each sub-circuit comprises a pulse transformer for driving the corresponding high-voltage semiconductor power tube by using pulses.
The structure of the sub-circuit is as follows: the pulse current control circuit comprises a current control unit, a pulse transformer, a pulse shaping unit and a fourth high-voltage power switch transistor. The input end of the current control unit is connected with a power supply, the output end of the current control unit is connected with a primary winding of the pulse transformer, the input end of the pulse shaping unit is connected with a secondary winding of the pulse transformer, and the output end of the pulse shaping unit is connected with a fourth high-voltage power switching transistor; the fourth high-voltage power switch transistor is connected with the voltage-sharing circuit; the input end and the output end of each sub-circuit are connected in series.
Further, the current control unit comprises a thirty-first resistor, an eighth photoelectric coupler, a twenty-eighth resistor and a sixth diode; one end of the thirty-first resistor is connected to the DVCC, and the other end is connected to the input photodiode anode of the eighth photocoupler; and one end of the twenty-eighth resistor is connected to the AVCC and the homonymous end of the main winding of the pulse transformer.
The structure of the pulse shaping unit is as follows: the circuit comprises a third diode, a fifth diode, a thirty-second resistor, a thirty-third resistor, a twenty-fifth resistor, a twenty-fourth resistor and a second diode; the dotted end of a primary winding and a secondary winding of the pulse transformer are connected to the anode of a third diode, and the other end of the secondary winding is connected to the anode of a fifth diode; the cathode of the third diode is connected to the cathode of the fifth diode, the cathode of the second diode and one end of a twenty-fifth resistor, and the thirty-second resistor is connected with the fifth diode in parallel; the anode of the second diode is connected to one end of a twenty-fourth resistor, the other end of the twenty-fourth resistor is connected to the other end of the twenty-fifth resistor and is connected to the grid electrode of the fourth high-voltage semiconductor power tube, and the thirty-third resistor is connected across the grid electrode and the source electrode of the fourth high-voltage semiconductor power tube.
As shown in fig. 1, the names of the components of each sub-circuit are different, but the structures are the same, and for convenience of description, the present invention adopts the same names for the corresponding components of each sub-circuit, such as "fourth high voltage semiconductor power transistor" refers to Q4, Q7, Q10 in fig. 1; the twenty-fourth resistance is broadly referred to as R24, R45, R57.
Because the control is required to be carried out simultaneously, the control sides of the sub-circuits corresponding to the photoelectric couplers adopt a series connection control mode, and the on-off consistency is ensured.
Each sub-circuit 3 is a group, and a plurality of groups can be combined and used as required. The multiple groups of the high-voltage withstand voltage can be freely connected in series to improve the high-voltage withstand voltage, or the multiple groups of the high-voltage withstand.
Second, voltage-sharing circuit
The voltage equalizing circuit is arranged corresponding to each sub-circuit of the isolation driving circuit, and is used for avoiding individual difference of high-voltage semiconductor power tubes in each sub-circuit of the isolation driving circuit in the manufacturing process and improving the reliability of control.
The voltage-sharing circuit can adopt a common voltage-sharing circuit as a voltage-sharing circuit of the high-voltage semiconductor power tube. Specifically, the following may be two embodiments:
example 1:
the voltage-sharing circuit comprises a twenty-first resistor, a third high-voltage semiconductor power tube and a thirty-seventh current sampling resistor; the connection relationship is as follows: the drain electrode of the third high-voltage semiconductor power tube is connected to the drain electrode of the fourth high-voltage semiconductor power tube, the source electrode of the third high-voltage semiconductor power tube is connected to one end of a thirty-seventh current sampling resistor, and the other end of the thirty-seventh current sampling resistor is connected to the source electrode of the fourth high-voltage semiconductor power tube.
The names of the parts of the voltage-sharing circuits corresponding to the sub-circuits are different, but the structures are the same, and for convenience of description, the utility model adopts the same names for the corresponding parts of the voltage-sharing circuits, for example, the third high-voltage semiconductor power tube refers to Q3, Q6 and Q9 in FIG. 1; the thirty-seventh current sampling resistor is broadly designated as R37, R54, R64.
Example 2:
the voltage equalizing circuit comprises a resistor, and two ends of the resistor are respectively connected with the drain electrode and the grid electrode of the fourth high-voltage semiconductor power tube.
Third, auxiliary power supply isolation circuit
Auxiliary power supply isolating circuit: the circuit can be built by adopting a mature 5V-LDO conversion circuit and is used for isolating the power supply of the analog part and the power supply of the logic part.
Signal isolation converting circuit
The signal isolation conversion circuit and the voltage equalizing circuit are arranged in a one-to-one correspondence mode and used for amplifying and shaping voltage values at two ends of a sampling resistor in the voltage equalizing circuit and comparing the voltage values with sine waves generated by a series quartz crystal oscillating circuit to generate a high-frequency square wave capable of automatically stabilizing pulse width, the square wave is shaped into a direct current level after passing through a high-frequency transformer, so that a high-voltage semiconductor power tube in the voltage equalizing circuit is maintained to work in a linear region, the linearity degree can be adjusted by adjusting reference voltage, and the high-voltage semiconductor power tube is equivalent to a large resistor with adjustable resistance and self-stability.
The input end of the signal isolation and conversion circuit is connected with the output end of the voltage equalizing circuit of the third high-voltage semiconductor power tube, and as shown in fig. 3, the signal isolation and conversion circuit comprises an instrument amplifier, a series-connection type quartz crystal oscillation circuit and a level conversion circuit which are connected in sequence; the input end of the instrument amplifier is used as the input end of the signal isolation and conversion circuit, and the level conversion circuit is used as the output end of the signal isolation and conversion circuit.
The instrumentation amplifier and the series quartz crystal oscillation circuit may adopt the existing circuits, and are not described herein.
The level conversion circuit comprises a sixth resistor, a seventh slide rheostat, a CX1 capacitor, a tenth resistor, a third B operational amplifier, an eighth resistor, a fourth A operational amplifier, an eighth resistor, a second resistor, a fourth B operational amplifier, an eighteenth resistor, a fifteenth slide rheostat, an eleventh resistor, a third resistor, a first high-frequency transformer, a first diode, a fifth capacitor, a fifth resistor and a fourth resistor; the anode of the DX1 diode is connected to the output end of the third A operational amplifier, the cathode is connected to one end of a CX1 capacitor and one end of a tenth resistor, the other end of the CX1 capacitor is connected to AGND, the other end of the tenth resistor is connected to the inverting end of the third B operational amplifier, the non-inverting end of the third B operational amplifier is connected to the sliding end of a seventh sliding rheostat, one fixed end of the seventh sliding rheostat is connected to AGND, the other fixed end of the seventh sliding rheostat is connected to one end of a sixth resistor, and the other end of the sixth resistor is connected to AVCC; the output end of the third B operational amplifier is connected to one end of an eighth resistor, the other end of the eighth resistor is connected to the in-phase end of a fourth A operational amplifier, the inverting end of the fourth A operational amplifier is connected to one end of a twelfth resistor, the other end of the twelfth resistor is connected to the inverting end and the output end of the fourth B operational amplifier, and the in-phase end of the fourth B operational amplifier is connected to one end of an eighteenth resistor, one fixed end of a fifteenth sliding rheostat and one end of a tenth resistor; the other end of the eighteenth resistor is connected to the AVCC, the other fixed end of the fifteenth sliding rheostat is connected to AGND, and the other end of the tenth resistor is connected to one end of the eleventh capacitor and the collector of the second diode; the output end of the fourth A operational amplifier is connected to one end of an eleventh resistor, the other end of the eleventh resistor is connected to the base level of a first N-type triode, the emitting electrode of the first N-type triode is connected to AGND, the collecting electrode of the first N-type triode is connected to one end of a primary winding of a first high-frequency transformer, the same-name end of the primary winding of the first high-frequency transformer is connected to one end of a third resistor, the other end of the third resistor is connected to AVCC, the same-name end of a secondary winding of the first high-frequency transformer is connected to the anode of a first diode, the cathode of the first diode is connected to one end of a fifth capacitor and one end of a fourth resistor, and the other end of the; and the other end of the fourth resistor is connected to the grid electrode of the third high-voltage semiconductor power tube.
The following will explain the working procedure of the high-speed high-voltage electronic switch:
the method comprises the following steps: the input end of the isolation driving circuit is electrified, and the secondary winding of the pulse transformer of each sub-circuit outputs pulses with the same frequency as the main winding;
step two: the pulse shaping unit of the corresponding sub-circuit shapes the pulse, drives the corresponding fourth high-voltage semiconductor power tube, and controls the on-off of the high-voltage power by controlling the switch of the fourth high-voltage semiconductor power tube;
step three: collecting voltage values at two ends of a thirty-seventh current sampling resistor;
step four: amplifying and shaping the acquired voltage, and comparing the amplified and shaped voltage with a sine wave generated by a series quartz crystal oscillation circuit to generate a high-frequency square wave capable of automatically stabilizing the pulse width;
step five: the first high-frequency transformer converts the direct current level into a high-square wave to realize the isolated transmission of signals, and the direct current level is shaped through the first diode, the fifth capacitor, the fifth resistor and the fourth resistor, so that the third high-voltage semiconductor power tube in the corresponding voltage-sharing functional circuit is maintained to work in a linear region.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A high-speed high-voltage electronic switch comprises an isolation driving circuit, a voltage equalizing circuit and an auxiliary power supply isolation circuit;
the isolation driving circuit comprises at least one group of sub-circuits, and each group of sub-circuits comprises 3 sub-circuits with the same structure; the structure of the sub-circuit is as follows: the pulse shaping circuit comprises a current control unit, a pulse transformer, a pulse shaping unit and a fourth high-voltage power switch transistor; the input end of the current control unit is connected with the DVCC, the output end of the current control unit is connected with a main winding of the pulse transformer, the input end of the pulse shaping unit is connected with a secondary winding of the pulse transformer bank, and the output end of the pulse shaping unit is connected with a fourth high-voltage power switch transistor; the fourth high-voltage power switch transistor is connected with the voltage-sharing circuit; the input end and the output end of each sub-circuit are connected in series;
the number of the voltage-sharing circuits is in one-to-one correspondence with the number of the isolation driving circuit sub-circuits, and the voltage-sharing circuits are connected with the output ends of the corresponding sub-circuits;
the auxiliary power isolation circuit is used for converting external direct current into direct current.
2. The high-speed high-voltage electronic switch according to claim 1, wherein the current control unit comprises a thirty-first resistor, an eighth photocoupler, a twenty-eighth resistor, and a sixth diode; one end of the thirty-first resistor is connected to the DVCC, and the other end is connected to the input photodiode anode of the eighth photocoupler; and one end of the twenty-eighth resistor is connected to the AVCC and the homonymous end of the main winding of the pulse transformer.
3. A high speed, high voltage electronic switch according to claim 2, wherein the pulse shaping unit is configured to: the circuit comprises a third diode, a fifth diode, a thirty-second resistor, a thirty-third resistor, a twenty-fifth resistor, a twenty-fourth resistor and a second diode; the dotted end of a primary winding and a secondary winding of the pulse transformer are connected to the anode of a third diode, and the other end of the secondary winding is connected to the anode of a fifth diode; the cathode of the third diode is connected to the cathode of the fifth diode, the cathode of the second diode and one end of a twenty-fifth resistor, and the thirty-second resistor is connected with the fifth diode in parallel; the anode of the second diode is connected to one end of a twenty-fourth resistor, the other end of the twenty-fourth resistor is connected to the other end of the twenty-fifth resistor and is connected to the grid electrode of the high-voltage semiconductor power tube, and the thirty-third resistor is connected across the grid electrode and the source electrode of the high-voltage semiconductor power tube.
4. The high-speed high-voltage electronic switch according to claim 3, wherein the level shift circuit comprises a sixth resistor, a seventh sliding rheostat, a CX1 capacitor, a tenth resistor, a third B operational amplifier, an eighth resistor, a fourth A operational amplifier, a fourth B operational amplifier, an eighteenth resistor, a fifteenth sliding rheostat, an eleventh resistor, a third resistor, a first high-frequency transformer, a first diode, a fifth capacitor, a fifth resistor and a fourth resistor; the anode of the DX1 diode is connected to the output end of the third A operational amplifier, the cathode is connected to one end of a CX1 capacitor and one end of a tenth resistor, the other end of the CX1 capacitor is connected to AGND, the other end of the tenth resistor is connected to the inverting end of the third B operational amplifier, the non-inverting end of the third B operational amplifier is connected to the sliding end of a seventh sliding rheostat, one fixed end of the seventh sliding rheostat is connected to AGND, the other fixed end of the seventh sliding rheostat is connected to one end of a sixth resistor, and the other end of the sixth resistor is connected to AVCC; the output end of the third B operational amplifier is connected to one end of an eighth resistor, the other end of the eighth resistor is connected to the in-phase end of a fourth A operational amplifier, the inverting end of the fourth A operational amplifier is connected to one end of a twelfth resistor, the other end of the twelfth resistor is connected to the inverting end and the output end of the fourth B operational amplifier, and the in-phase end of the fourth B operational amplifier is connected to one end of an eighteenth resistor, one fixed end of a fifteenth sliding rheostat and one end of a tenth resistor; the other end of the eighteenth resistor is connected to the AVCC, the other fixed end of the fifteenth sliding rheostat is connected to AGND, and the other end of the tenth resistor is connected to one end of the eleventh capacitor and the collector of the second diode; the output end of the fourth A operational amplifier is connected to one end of an eleventh resistor, the other end of the eleventh resistor is connected to the base level of a first N-type triode, the emitting electrode of the first N-type triode is connected to AGND, the collecting electrode of the first N-type triode is connected to one end of a primary winding of a first high-frequency transformer, the same-name end of the primary winding of the first high-frequency transformer is connected to one end of a third resistor, the other end of the third resistor is connected to AVCC, the same-name end of a secondary winding of the first high-frequency transformer is connected to the anode of a first diode, the cathode of the first diode is connected to one end of a fifth capacitor and one end of a fourth resistor, and the other end of the; and the other end of the fourth resistor is connected to the grid electrode of the third high-voltage semiconductor power tube.
5. A high-speed high-voltage electronic switch according to claim 1, wherein the auxiliary power isolation circuit is built up from a 5V-LDO converter circuit.
6. A high-speed high-voltage electronic switch according to any one of claims 1 to 5, characterized in that the voltage-sharing circuit is arranged corresponding to each sub-circuit of the isolation driving circuit, and the output terminals of the other corresponding sub-circuits are connected; the power supply comprises a twenty-first resistor, a third high-voltage semiconductor power tube and a thirty-seventh current sampling resistor; the connection relationship is as follows: the drain electrode of the third high-voltage semiconductor power tube is connected to the drain electrode of the fourth high-voltage semiconductor power tube, the source electrode of the third high-voltage semiconductor power tube is connected to one end of a thirty-seventh current sampling resistor, and the other end of the thirty-seventh current sampling resistor is connected to the source electrode of the fourth high-voltage semiconductor power tube.
7. A high-speed high-voltage electronic switch according to any one of claims 1 to 5, characterized in that the voltage-sharing circuit is arranged corresponding to each sub-circuit of the isolation driving circuit, and the output terminals of the other corresponding sub-circuits are connected; the voltage equalizing circuit comprises a resistor, and two ends of the resistor are respectively connected with the drain electrode and the grid electrode of the fourth high-voltage semiconductor power tube.
8. A high-speed high-voltage electronic switch according to claim 6, further comprising a signal isolation and conversion circuit, wherein the signal isolation and conversion circuit is arranged in one-to-one correspondence with the voltage equalizing circuit, and the input end of the signal isolation and conversion circuit is connected with the output end of the voltage equalizing circuit of the third high-voltage semiconductor power tube, and the signal isolation and conversion circuit comprises an instrumentation amplifier, a series-type quartz crystal oscillation circuit and a level conversion circuit which are connected in sequence; the input end of the instrument amplifier is used as the input end of the signal isolation and conversion circuit, and the level conversion circuit is used as the output end of the signal isolation and conversion circuit.
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| CN201922454894.2U CN210839513U (en) | 2019-12-30 | 2019-12-30 | High-speed high-voltage electronic switch |
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| CN111181538A (en) * | 2019-12-30 | 2020-05-19 | 成都信息工程大学 | High-speed high-voltage electronic switch and working method thereof |
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| CN111181538A (en) * | 2019-12-30 | 2020-05-19 | 成都信息工程大学 | High-speed high-voltage electronic switch and working method thereof |
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Effective date of registration: 20220322 Address after: 610041 No. 142, Shaoling Heng street, Wuhou District, Chengdu, Sichuan Patentee after: Chengdu Dejin Technology Co.,Ltd. Address before: No.24, Xuefu Road Section 1, Southwest Airport Economic Development Zone, Shuangliu District, Chengdu, Sichuan 610225 Patentee before: CHENGDU University OF INFORMATION TECHNOLOGY |
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Effective date of registration: 20220729 Address after: 610213 1st floor, building 1, No. 269, north section of Hupan Road, Zhengxing street, Tianfu new area, China (Sichuan) pilot Free Trade Zone, Chengdu, Sichuan Patentee after: SICHUAN WANZHI WODA TECHNOLOGY Co.,Ltd. Address before: 610041 No. 142, Shaoling Heng street, Wuhou District, Chengdu, Sichuan Patentee before: Chengdu Dejin Technology Co.,Ltd. |
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