CN210778646U - Electric injection device - Google Patents
Electric injection device Download PDFInfo
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- CN210778646U CN210778646U CN201922388901.3U CN201922388901U CN210778646U CN 210778646 U CN210778646 U CN 210778646U CN 201922388901 U CN201922388901 U CN 201922388901U CN 210778646 U CN210778646 U CN 210778646U
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- auxiliary heating
- injection device
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- 238000002347 injection Methods 0.000 title claims abstract description 100
- 239000007924 injection Substances 0.000 title claims abstract description 100
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- 238000010438 heat treatment Methods 0.000 claims abstract description 75
- 238000000034 method Methods 0.000 claims abstract description 57
- 230000008569 process Effects 0.000 claims abstract description 57
- 238000009529 body temperature measurement Methods 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 4
- 230000007723 transport mechanism Effects 0.000 claims 1
- 230000005611 electricity Effects 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 78
- 230000005540 biological transmission Effects 0.000 description 18
- 230000007246 mechanism Effects 0.000 description 11
- 230000002159 abnormal effect Effects 0.000 description 9
- 238000001816 cooling Methods 0.000 description 7
- 230000005856 abnormality Effects 0.000 description 6
- 239000000112 cooling gas Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000003475 lamination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The utility model belongs to the technical field of solar cell produces, a electricity injection apparatus is disclosed, this electricity injection apparatus include casing and electricity injection portion, the process chamber has in the casing, electricity injection portion can to the holding in the silicon chip circular telegram of process chamber, it is right with the silicon chip carries out electricity injection operation and makes the silicon chip intensifies, the process chamber still is provided with: the auxiliary heating structure is electrically connected with a standby power supply so as to heat the silicon wafer when the auxiliary heating structure is electrified; and the temperature measuring component is used for measuring the temperature of the silicon chip and is electrically connected with the standby power supply. The utility model provides an electricity injection device can measure the unusual temperature drop of silicon chip through temperature measuring component to the temperature of silicon chip is maintained through the auxiliary heating structure by stand-by power supply, does not influence electricity injection effect and productivity because of unusual temperature drop with the silicon chip of ensureing to be in the electricity injection operation, and avoids the silicon chip to scrap.
Description
Technical Field
The utility model relates to a solar cell produces technical field, especially relates to an electricity injection device.
Background
The process mainly comprises the steps of electrifying the silicon wafer, injecting current carriers into the silicon wafer and heating the silicon wafer to a proper temperature range so as to passivate defects in the silicon wafer and improve the light attenuation resistance of the silicon wafer.
At present, in the electrical injection process of mass production, a channel-type electrical injection device is generally adopted, and the channel-type electrical injection device comprises a plurality of electrical injection chambers which are continuously arranged and can electrify a silicon wafer, a cooling chamber for cooling the silicon wafer after electrical injection, a transmission mechanism for transmitting the silicon wafer, and the like. In production, if a fault occurs in a single electric injection chamber or a transmission mechanism, etc., the control system is easy to report errors, so that the controller of the electric injection device is switched on and off to supply the current for electric injection, so that the temperature of the silicon wafer in operation is reduced to be below the proper temperature range, the effect and the capacity of the electric injection are seriously influenced, and even the silicon wafer is scrapped.
Therefore, the above problems need to be solved.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an electricity injection device for solve electricity injection device's unusual temperature drop influence silicon chip electricity and pour into the problem of effect.
To achieve the purpose, the utility model adopts the following technical proposal:
an electric injection device comprises a shell and an electric injection part, wherein a process cavity is arranged in the shell, the electric injection part can electrify a silicon wafer contained in the process cavity, and the process cavity is also internally provided with:
the auxiliary heating structure is arranged in the process cavity and is electrically connected with a standby power supply so as to heat the silicon wafer when electrified;
and the temperature measuring component is arranged in the process cavity, is used for measuring the temperature of the silicon wafer and is electrically connected with the standby power supply.
Preferably, the auxiliary heating structure is an infrared heating lamp tube.
Preferably, the extending direction of the infrared heating lamp tube is parallel to the transmission direction of the silicon wafer, and the difference between the length of the infrared heating lamp tube and the side length of the silicon wafer is +/-5 cm.
Preferably, the extending direction of the infrared heating lamp tube is perpendicular to the transmission direction of the silicon wafer, and the difference between the length of the infrared heating lamp tube and the lamination height of the silicon wafer is +/-5 cm.
Preferably, the infrared heating lamp tubes are arranged in parallel.
Preferably, the electric injection device further comprises a controller, and the controller is electrically connected with the electric injection part, the auxiliary heating structure, the temperature measuring assembly and the standby power supply.
Preferably, the housing comprises a top wall and a bottom wall which are opposite up and down, and two side walls which are connected with the side parts of the top wall and the bottom wall and are arranged oppositely;
the electric injection device also comprises a door body which is connected with the end parts of the top wall and the bottom wall and is used for closing the shell to form the process chamber;
the auxiliary heating structure is arranged on the inner side of the top wall, the bottom wall or the side wall.
Preferably, the auxiliary heating structures are symmetrically arranged on the inner sides of the two side walls and correspond to the positions of the silicon wafers accommodated in the process chamber.
Preferably, the door body is slidably connected or hinged with the shell.
Preferably, the electric injection device further comprises a transmission mechanism, and the transmission mechanism is used for conveying the silicon wafer into the process chamber.
The utility model has the advantages that:
the utility model provides an electricity injection device can break down when leading to electricity injection device unusual at parts such as electricity injection device, transmission device, measure the unusual temperature drop of silicon chip through temperature measurement subassembly to the temperature of silicon chip is maintained through the auxiliary heating structure by stand-by power supply, does not influence electricity injection effect and productivity because of unusual temperature drop with the silicon chip of ensureing to be in the electricity injection operation, and avoids the silicon chip to scrap.
Drawings
Fig. 1 is a schematic structural diagram of an electrical injection apparatus according to an embodiment of the present invention;
fig. 2 is a comparison graph of the efficiency improvement of the solar cell after the electric injection process treatment of the electric injection device and the conventional electric injection device in the embodiment of the present invention;
fig. 3 is a graph showing the degradation of battery efficiency after the electric injection process of the electric injection device and the conventional electric injection device according to the embodiment of the present invention.
In the figure:
1. a housing; 10. a process chamber; 11. a top wall; 12. a bottom wall; 13. a side wall; 14. an air inlet;
2. an auxiliary heating structure; 3. a temperature measuring component; 4. a door body.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
In the description of the present invention, unless expressly stated or limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, detachably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact between the first and second features, or may comprise contact between the first and second features not directly. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description of the present embodiment, the terms "upper", "lower", "right", etc. are used in an orientation or positional relationship based on that shown in the drawings only for convenience of description and simplicity of operation, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used only for descriptive purposes and are not intended to have a special meaning.
The present embodiment provides an electrical injection device, which can perform electrical injection operation on silicon wafers individually or in a plurality of ways, and the electrical injection device can maintain the temperature of the silicon wafers in the electrical injection device when power supply abnormality occurs, so as to ensure that the electrical injection effect and the productivity of the silicon wafers in the electrical injection operation are not affected by abnormal temperature drop, and to avoid silicon wafer scrap.
Referring to fig. 1, the electrical injection apparatus includes a housing 1 and an electrical injection part (not shown), wherein the housing 1 has a process chamber 10 capable of accommodating a silicon wafer, and the electrical injection part is capable of supplying power to the silicon wafer (not shown) accommodated in the process chamber 10 to electrically inject the silicon wafer and heat the silicon wafer.
The electric injection device also comprises an auxiliary heating structure 2 and a temperature measuring component 3 which are both arranged in the process cavity 10, wherein the auxiliary heating structure 2 is electrically connected with a standby power supply (not shown in the figure) so as to heat the silicon wafer when electrified; the temperature measuring component 3 is used for measuring the temperature of the silicon chip and is electrically connected with the standby power supply.
During the electrical implantation operation, the silicon wafer needs to be maintained in a specific suitable temperature range according to the type of the silicon wafer, for example, the suitable temperature for electrical implantation of the monocrystalline silicon wafer is generally between 150 ℃ and 170 ℃, and the suitable temperature for electrical implantation of the polycrystalline silicon wafer is generally between 230 ℃ and 250 ℃. The temperature measuring component 3 detects the temperature of the silicon wafer in the process chamber 10 in real time, taking a monocrystalline silicon wafer as an example, when the temperature of the silicon wafer in the process chamber 10 is reduced to below 150 ℃, the standby power supply supplies power to the auxiliary heating structure 2, the auxiliary heating structure 2 heats and heats the silicon wafer to heat the silicon wafer, when the temperature of the silicon wafer in the process chamber 10 is increased to above 170 ℃, the standby power supply stops supplying power to the auxiliary heating structure 2 to gradually cool the silicon wafer, and if the temperature is adjusted circularly, the silicon wafer can be kept within the proper temperature range.
Referring to fig. 1, in the present embodiment, the casing 1 is a rectangular parallelepiped structure, and specifically includes a top wall 11 and a bottom wall 12 opposite to each other, and two side walls 13 connecting the side portions of the top wall 11 and the bottom wall 12 and opposite to each other, and the electric injection device further includes a door 4 connected to the end portions of the top wall 11 and the bottom wall 12 and used for closing the casing 1 to form the process chamber 10. Of course, the housing may be provided in other alternative embodiments as a cylinder or other shape.
The auxiliary heating structure 2 may be arranged inside the top wall 11, the bottom wall 12 or the side wall 13. Preferably, the auxiliary heating structures 2 are symmetrically disposed on the two side walls 13 and correspond to the positions of the silicon wafers accommodated in the process chamber 10, so as to uniformly heat the silicon wafers.
In this embodiment, the electrical injection apparatus may further include a transmission mechanism (not shown), and the transmission mechanism is disposed in the housing 1 and at the front and rear sides of the housing 1, respectively, and can be butted against each other to input or output silicon wafers into or from the housing 1. The door bodies 4 are arranged at the front end and the rear end of the shell 1, and after the silicon wafer enters the process chamber 10 of the shell 1, the door bodies 4 can be closed to seal the process chamber 10.
In particular, in order to open and close the front and rear ends of the casing 1, the door 4 is slidably or hingedly connected to the casing 1 to enable the silicon wafers to enter and exit the process chamber 10 after being opened, and to form a sealed environment in the process chamber 10 after being closed, which helps to maintain the temperature in the process chamber 10.
In this embodiment, a pair of slide rails extending along the vertical direction is respectively arranged at the front end and the rear end of the casing 1, the two door bodies 1 are respectively connected with the two pairs of slide rails in a sliding manner, if the two side walls 13 are located at the side parts at the front end and the rear end of the casing 1, the slide rails are respectively fixedly arranged along the vertical direction, the door bodies 4 are correspondingly fixedly provided with slide blocks capable of being connected with the slide rails in a sliding manner towards the two side parts of the casing 1, and therefore the front end and the rear end of the casing 1 can be respectively opened and closed in a sliding manner up and down after the. Meanwhile, the door body 4 arranged in a vertically sliding manner is also beneficial to saving the occupied space of the electric injection device, especially the occupied space in the horizontal direction, so that the occupied area of the electric injection device is reduced.
In order to realize the automatic ascending and descending of the door body 4, a driving device is arranged on the top wall, and the driving device is connected with the door body 4 and can drive the door body 4 to move.
In this embodiment, the auxiliary heating structure 2 is an infrared heating lamp tube to directly heat the silicon wafer by radiation heating. Both sides wall 13 all can be fixed set up a plurality of joint spare that are used for the joint infrared heating fluorescent tube to make infrared heating fluorescent tube convenient to detach maintain. For example, the clip may include a "C" shaped clip and a base plate fixedly connected to the "C" shaped clip, the base plate being fixed to the sidewall 13, the "C" shaped clip opening into the process chamber 10, and allowing the infrared heating lamp to be clipped into the "C" shaped clip.
Alternatively, the auxiliary heating structure 2 may also be an electrical heating tube/sheet, a silica gel heating sheet/belt, etc. fixed in the housing 1 to indirectly heat the silicon wafer through the medium of air in the process chamber 10.
Preferably, the extending direction of the infrared heating lamp tube can be parallel to the transmission direction of the silicon wafer, and the difference between the length of the infrared heating lamp tube and the side length (opposite side distance) of the silicon wafer is +/-5 cm, so that the infrared heating lamp tube can ensure that the silicon wafer is uniformly heated. Taking a common monocrystalline silicon wafer with the side length of 15.6cm as an example, the length of the infrared heating lamp tube can be selected to be 15cm, 13.6cm, 11.6cm and the like which are slightly shorter than the side length of the silicon wafer so as to avoid that the whole silicon wafer cannot be uniformly heated by the infrared heating lamp tube which is too short, and the length of the infrared heating lamp tube can also be selected to be 16cm, 18.6cm, 20.6cm and the like which are slightly longer than the side length of the silicon wafer so as to avoid that the infrared heating lamp tube which is too long is not suitable for being assembled in the process chamber 10 and the infrared heating lamp tube which is too long consumes electric energy. Certainly, the length of the infrared heating lamp tube can be set to be 15.6cm to completely correspond to the side length of the silicon wafer, so that the silicon wafer is heated uniformly and electric energy is not wasted.
In other embodiments, the extending direction of the infrared heating lamp tube may also be perpendicular to the transmission direction of the silicon wafer, and the difference between the length of the infrared heating lamp tube and the height of the silicon wafer lamination is ± 5 cm. The length of the infrared heating lamp tube can be selected in the manner referred to above, except that the length of the infrared heating lamp tube should be equal to, slightly shorter than or slightly longer than the height of the silicon wafer stack.
Optionally, to further accommodate the stack height and length of the silicon wafers, the number of infrared heating lamp tubes may be two or more. The infrared heating lamps are spaced in parallel to uniformly heat all the silicon wafers in the process chamber 10.
The temperature measuring component 3 can be a thermocouple, a thermal resistor, a thermistor and the like, the detection part of the temperature measuring component is arranged in the process cavity 10, and the process cavity 10 is relatively closed and narrow, so that the temperature measuring component 3 can indirectly measure the temperature of the silicon wafer in a mode of measuring the air temperature in the process cavity 10.
Optionally, the temperature measurement component 3 may be disposed at a middle position in the height direction of the process chamber 10, such as the side wall 13 or the middle portion of the door 4, so as to more accurately measure the temperature of the silicon wafer and reduce the influence of the up-and-down convection of the cold and hot air in the process chamber 10 on the temperature measurement.
In order to maintain the temperature of the silicon wafer during normal electrical injection operation, the casing 1 is further provided with an air inlet 14 communicated with the process chamber 10, and the air inlet 14 is communicated with a cooling air source (not shown in the figure), so that when the temperature of the silicon wafer is higher than an appropriate temperature, the cooling air source can blow cooling gas such as compressed air into the process chamber 10 through the air inlet 14 to reduce the temperature of the silicon wafer in time. It can be understood that the cooling gas source can not only cool the silicon wafer in the normal working state of the electric injection device, but also maintain the temperature of the silicon wafer in cooperation with the auxiliary heating structure 2 when the electric injection device is abnormal.
Preferably, the gas inlet holes 14 may be symmetrically disposed on the two side walls 13, so that the cooling gas can uniformly contact with the silicon wafer, and the temperature of the silicon wafer is uniformly and stably reduced. For example, one row, two rows or more rows of the intake holes 14 are provided in the height direction of the side wall 13, and the intake holes 14 located in the same row are uniformly distributed in the horizontal direction. All the air inlet holes 14 can be externally connected with a general air inlet pipe and communicated with a cooling air source together, so that the air outlet volume of each air inlet hole is uniform. Of course, each air inlet opening 14 can be connected to a cooling air source through a separate air inlet pipe.
In addition, the air inlet holes 14 can be staggered with the auxiliary heating structure 2, so that the heating and cooling of the silicon wafer are further uniform and stable.
The circulation adjusting operation can be controlled by a controller (such as a PLC (programmable logic controller) and the like, and is not shown in the figure), the controller is electrically connected with the electric injection part, the auxiliary heating structure 2, the temperature measuring component 3 and the standby power supply, so that the controller can control whether the auxiliary heating structure 2 works or not based on temperature data measured by the temperature measuring component 3, a closed-loop temperature control system is formed, the automation degree is high, the heating temperature of the silicon wafer in the process cavity 10 can be timely and effectively ensured, and the electric injection quality of the silicon wafer is favorably ensured.
It should be noted that the backup power supply may be an independent power supply different from the power supply of the electric injection part, or may be an independent power supply loop connected to the main power supply of the electric injection part, and the independent power supply loop may be controlled by the temperature control system to be switched on and off so as to controllably supply power to the auxiliary heating element.
In normal electric injection operation, the temperature in the electric injection device may be lower than the proper temperature range occasionally due to external factors such as current fluctuation of the power grid, and the controller generally adjusts the operating current of the electric injection part to stabilize the temperature in the electric injection device again. The auxiliary heating structure 2 is mainly used for maintaining the temperature of the electric injection device when the electric injection device is abnormally cooled due to the failure of the electric injection device, the transmission mechanism and other components, so that the controller can judge and control whether the standby power supply is electrified with the auxiliary heating structure 2 or not according to the electrifying abnormal signal of the electric injection part and the transmission abnormal signal of the transmission mechanism.
In view of this, in order to eliminate the frequent energization of the auxiliary heating structure 2 caused by some abnormal conditions (such as the silicon wafer at the discharge end of the conveying mechanism is not taken out in time) which can be solved in real time, the energization of the auxiliary heating structure 2 may be delayed after the controller receives the abnormal signal.
For example, when the electrical injection device is operating normally (i.e. the temperature in the process chamber 10 at this time can be regarded as the suitable temperature for the electrical injection operation), after the controller receives the abnormal power-on signal of the electrical injection part or the abnormal transmission signal of the transmission mechanism and lasts for 10 seconds, the controller starts the temperature control system and stores the real-time temperature T of the silicon wafer in the process chamber 10 measured by the temperature measurement component 3 at the current timeoThe temperature measuring component 3 continuously measures the temperature of the silicon chip when the temperature of the silicon chip is lower than ToWhen the auxiliary heating structure 2 is started, the controller controls the standby power supply to be started, and the auxiliary heating structure 2 is electrified to heat the silicon wafer; when the temperature of the silicon wafer is higher than ToAnd when the standby power supply is controlled to be turned off, the controller stops electrifying the auxiliary heating structure 2, so that the silicon wafer is cooled, and the temperature is stable. And when the controller judges that the received abnormal signal is eliminated, the controller closes the temperature control system, and the electric injection device operates normally.
Referring to fig. 2 and 3, fig. 2 is a graph showing a comparison of efficiency improvement of a solar cell after an electrical injection process is performed, fig. 3 is a graph showing a comparison of efficiency attenuation of a solar cell after an electrical injection process is performed, as shown in fig. 2 and 3, i is an electrical injection process processing effect after an abnormality occurs during an electrical injection operation of an electrical injection device, ii is an electrical injection process processing effect after a normal operation, and iii is an electrical injection process processing effect after an abnormality occurs such as energization of an electrical injection part and transmission of a transmission mechanism during an electrical injection operation of a conventional electrical injection device. Comparing i with ii, it can be seen that the treatment effect of the electric injection process is not affected by the electric injection device provided by the present embodiment when no abnormality occurs. Comparing i with iii, it can be known that, after an abnormality occurs, the electrical injection apparatus provided by the embodiment can effectively ensure that the treatment effect of the electrical injection process is not affected by the abnormality.
It is obvious that the above embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Numerous obvious variations, rearrangements and substitutions will now occur to those skilled in the art without departing from the scope of the invention. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. An electric injection device, comprising a shell (1) and an electric injection part, wherein a process chamber (10) is arranged in the shell (1), and the electric injection part can electrify a silicon wafer accommodated in the process chamber (10), the electric injection device is characterized by further comprising:
the auxiliary heating structure (2) is arranged in the process cavity (10), and the auxiliary heating structure (2) is electrically connected with a standby power supply so as to heat the silicon wafer when electrified; and
and the temperature measuring component (3) is arranged in the process cavity (10), and the temperature measuring component (3) is used for measuring the temperature of the silicon wafer and is electrically connected with the standby power supply.
2. An electric injector as claimed in claim 1, characterized in that the auxiliary heating structure (2) comprises an infrared heating lamp.
3. The electrical injection apparatus of claim 2, wherein the infrared heating lamp extends in a direction parallel to the direction of transport of the silicon wafer, and the difference between the length of the infrared heating lamp and the length of the side of the silicon wafer is ± 5 cm.
4. The electrical injection apparatus of claim 2, wherein the extension direction of the infrared heating lamp is perpendicular to the transport direction of the silicon wafer, and the difference between the length of the infrared heating lamp and the height of the silicon wafer is ± 5 cm.
5. The electrical injection apparatus of claim 2, wherein said infrared heating lamps are more than two, and each of said infrared heating lamps is disposed in parallel.
6. The electrical injection apparatus of claim 1, further comprising a controller electrically connected to the electrical injection section, the auxiliary heating structure (2), the temperature measurement assembly (3), and the backup power source.
7. An electro-injection device according to any one of claims 1-6, characterized in that the housing (1) comprises a top wall (11) and a bottom wall (12) which are opposite one another, and two side walls (13) which are connected to the sides of the top wall (11) and the bottom wall (12) and are arranged opposite one another;
the electric injection device also comprises a door body (4) connected to the ends of the top wall (11) and the bottom wall (12) and used for closing the shell (1) to form the process chamber (10);
the auxiliary heating structure (2) is arranged inside the top wall (11), the bottom wall (12) or the side wall (13).
8. The electrical injector as claimed in claim 7, characterized in that the auxiliary heating structure (2) is symmetrically arranged inside the two side walls (13) and corresponds to the position of the silicon wafer accommodated in the process chamber (10).
9. An electric injection device according to claim 7, characterized in that the door (4) is slidably or hingedly connected to the housing (1).
10. The electro-implantation device according to any of claims 1-6, further comprising a transport mechanism for transporting the silicon wafer into the process chamber (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922388901.3U CN210778646U (en) | 2019-12-26 | 2019-12-26 | Electric injection device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922388901.3U CN210778646U (en) | 2019-12-26 | 2019-12-26 | Electric injection device |
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| CN210778646U true CN210778646U (en) | 2020-06-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122196A (en) * | 2021-11-25 | 2022-03-01 | 通威太阳能(眉山)有限公司 | Electric injection method of crystalline silicon solar cell |
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2019
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114122196A (en) * | 2021-11-25 | 2022-03-01 | 通威太阳能(眉山)有限公司 | Electric injection method of crystalline silicon solar cell |
| CN114122196B (en) * | 2021-11-25 | 2023-07-21 | 通威太阳能(眉山)有限公司 | Electric injection method of crystalline silicon solar cell |
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Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |
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