CN210764357U - Purification device of boron trichloride - Google Patents
Purification device of boron trichloride Download PDFInfo
- Publication number
- CN210764357U CN210764357U CN201920706222.3U CN201920706222U CN210764357U CN 210764357 U CN210764357 U CN 210764357U CN 201920706222 U CN201920706222 U CN 201920706222U CN 210764357 U CN210764357 U CN 210764357U
- Authority
- CN
- China
- Prior art keywords
- boron trichloride
- adsorption bed
- reboiler
- bed
- tower
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Separation Of Gases By Adsorption (AREA)
Abstract
The utility model provides a purification device of boron trichloride. The method is characterized in that: the low-purity boron trichloride raw material is vaporized by a raw material reboiler, continuously passes through a first-stage adsorption bed, a second-stage adsorption bed, a reaction bed and a filter, then is introduced into a rectifying tower from the bottom of the tower, flows into a buffer tank through a tower top condenser, and one part of the material in the buffer tank returns to the rectifying tower and the other part of the material is extracted to a product storage tank. Has the advantages of simple structure, safety, reliability and the like.
Description
Technical Field
The utility model relates to a chemical industry separation technology field, concretely relates to purification device of boron trichloride.
Background
The high-purity boron trichloride is mainly used in a Chemical Vapor Deposition (CVD) film forming process and a plasma dry etching process which have high technical requirements in an IC manufacturing process and greatly influence the yield of circuits, can bring a very critical effect on the quality of IC products, and other electronic gases cannot be replaced. At present, the purity of the electronic grade boron trichloride is required to be more than 99.999 percent. Because the impurity content and purity of the boron trichloride directly affect the quality, performance, technical index and yield of IC and electronic components, the requirement of the electronic grade boron trichloride on gas phase, metal and other impurities is extremely high.
In the practical application of electronic grade high-purity boron trichloride, the requirement on the purity of gas is very high, the purity of boron trichloride is generally required to be more than 99.999%, a rectifying tower is generally used for rectification and purification in the process, and impurities with high boiling point and low boiling point in boron trichloride are removed, but because boron trichloride belongs to low-temperature liquefied gas, the removal efficiency of impurities with low boiling point (such as oxygen and nitrogen) is not high only by a rectification method, and the method of adopting a high reflux ratio and a high theoretical plate is generally a well-known high-energy consumption process.
Meanwhile, in the production process of boron trichloride, chlorine is used for reaction, the chlorine has certain solubility in the boron trichloride, and the purification requirement is difficult to meet by rectification purification, and Japanese patent JP patent publication No. 2013 144644A discloses that a corrosion-resistant device filled with boron carbide is used for purifying phosgene and chlorine in the boron trichloride, so that the content of the chlorine in the boron trichloride can be less than 1ppm, but the method needs to be carried out at a high temperature of 500-720 ℃, and is also a high-energy consumption process.
Disclosure of Invention
The utility model aims at providing a can get rid of more than 90% low boiling impurity and chlorine impurity in the boron trichloride at lower temperature within range (20 ~ 70 ℃), reach the boron trichloride purity through the rectification and > 99.999% to reduce the high-purity boron trichloride purification device of energy consumption.
The utility model discloses purpose technical solution does: the utility model provides a purification device of boron trichloride, is formed by connecting raw materials reboiler, one-level adsorption bed, second grade adsorption bed, reaction bed, filter, rectifying column reboiler, condenser, buffer tank, product storage tank, its characterized in that: vaporizing a low-purity boron trichloride raw material by a raw material reboiler, continuously passing through a first-stage adsorption bed, a second-stage adsorption bed, a reaction bed and a filter, introducing into a rectifying tower from the bottom of the tower, flowing into a buffer tank through a tower top condenser, returning part of the material in the buffer tank to the rectifying tower, and extracting part of the material to a product storage tank;
the first-stage adsorption bed is filled with an adsorbent X1 modified by 10-25% nitric acid;
the second-stage adsorption bed has pore volume of 0.45-0.70mL/g and micropore surface area of 1000-2Coconut shell activated carbon per gram;
the reaction bed adopts metal titanium with the diameter of phi 2-8 mm and ceramic ring mixed packing with the diameter of phi 5, and the ratio is 3.5:1 (volume ratio).
Compared with the prior art, the utility model have following advantage: the process adopts the process of adsorption, filtration and rectification, and is modified in the structure of a rectifying tower, so that the purification filler is added, and the unit energy consumption is reduced. Meanwhile, the adsorbers can be activated and regenerated, and the reaction bed packing is replaced periodically, so that the production cost is greatly reduced, and the device is simple in structure, safe and reliable.
Drawings
FIG. 1 is a schematic view of the purification process of high purity boron trichloride.
In the figure: 1. the system comprises a raw material reboiler, 2, a first-stage adsorption bed, 3, a second-stage adsorption bed, 4, a reaction bed, 5, a filter, 6, a rectifying tower, 7, a rectifying tower reboiler, 8, a condenser, 9, a buffer tank, 10 and a product storage tank.
Detailed Description
The embodiments are described below with reference to the accompanying drawings:
example 1
Take the production scale equipment of 100T high-purity boron trichloride produced every year as an example. The production device comprises a raw material reboiler 1, a primary adsorption bed 2, a secondary adsorption bed 3, a reaction bed 4, a filter 5, a rectifying tower 6, a rectifying tower reboiler 7, a condenser 8, a buffer tank 9 and a product storage tank 10. Wherein, the temperature of the raw material reboiler 1 is set to 55 ℃, the gas velocity flowing through the first-stage adsorption bed 2, the second-stage adsorption bed 3 and the reaction bed 4 after the material is vaporized is 250L/min, the theoretical plate number of the rectifying tower 6 is 30, and the reflux ratio is 5. The boron trichloride purification effect is as follows:
high temperature (500-720 ℃) is not used for removing chlorine impurities, the theoretical plate number is low, the reboiler power is low, and the electricity charge (according to 0.8 yuan/Kwh) is saved by about 56 ten thousand yuan per year.
Example 2
Take the production scale equipment of annual 500T high-purity boron trichloride as an example. The production device comprises a raw material reboiler 1, a primary adsorption bed 2, a secondary adsorption bed 3, a reaction bed 4, a filter 5, a rectifying tower 6, a rectifying tower reboiler 7, a condenser 8, a buffer tank 9 and a product storage tank 10. Wherein, the temperature of the raw material reboiler 1 is set to be 70 ℃, the gas velocity flowing through the first-stage adsorption bed 2, the second-stage adsorption bed 3 and the reaction bed 4 after the material is vaporized is 350L/min, the theoretical plate number of the rectifying tower is 28, and the reflux ratio is 5. The boron trichloride purification effect is as follows:
high temperature (500-720 ℃) is not used for removing chlorine impurities, the theoretical plate number is low, the reboiler power is low, and the electricity charge (according to 0.8 yuan/Kwh) is saved by about 260 ten thousand yuan per year.
Claims (1)
1. The utility model provides a purification device of boron trichloride, is formed by connecting raw materials reboiler (1), one-level adsorption bed (2), second grade adsorption bed (3), reaction bed (4), filter (5), rectifying column (6), rectifying column reboiler (7), condenser (8), buffer tank (9), product storage tank (10), its characterized in that: after being vaporized by a raw material reboiler (1), the low-purity boron trichloride continuously passes through a first-stage adsorption bed (2), a second-stage adsorption bed (3), a reaction bed (4) and a filter (5), then is introduced into a rectifying tower (6) from the bottom of the tower, flows into a buffer tank (9) through a tower top condenser (8), and a part of materials in the buffer tank (9) returns to the rectifying tower (6) and a part of materials are extracted to a product storage tank (10);
the secondary adsorption bed (3) has pore volume of 0.45-0.70mL/g and micropore surface area of 1000-2Coconut shell activated carbon per gram.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201920706222.3U CN210764357U (en) | 2019-05-16 | 2019-05-16 | Purification device of boron trichloride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201920706222.3U CN210764357U (en) | 2019-05-16 | 2019-05-16 | Purification device of boron trichloride |
Publications (1)
Publication Number | Publication Date |
---|---|
CN210764357U true CN210764357U (en) | 2020-06-16 |
Family
ID=71060838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201920706222.3U Active CN210764357U (en) | 2019-05-16 | 2019-05-16 | Purification device of boron trichloride |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN210764357U (en) |
-
2019
- 2019-05-16 CN CN201920706222.3U patent/CN210764357U/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN215026208U (en) | Preparation device of electronic grade ethyl orthosilicate | |
KR20180010366A (en) | Process for the recovery and purification of nitrous oxide from industrial emission gas mixtures | |
CN113247908B (en) | Separation method and separation device for chlorosilane in polysilicon production | |
CN110117015A (en) | The purification devices and method of boron chloride | |
CN110980648A (en) | Hydrogen bromide purification device and method | |
CN215101986U (en) | High-purity electronic grade chlorine purification apparatus for producing | |
CN113321184B (en) | High-purity electronic-grade chlorine purification production device and technology thereof | |
CN215781616U (en) | Purification device for preparing ultra-pure ammonia from low-temperature industrial ammonia | |
CN107648976B (en) | Method for preparing ultra-high-purity gas through low-temperature separation and low-temperature separation system | |
CN211716983U (en) | Device for separating and purifying krypton and xenon | |
CN210764357U (en) | Purification device of boron trichloride | |
CN111994873B (en) | Method and device for producing high-purity hydrobromic acid by adopting industrial grade hydrogen bromide gas | |
CN106044710A (en) | Method for purifying electron-grade hydrogen chloride | |
CN111174530A (en) | Method and device for separating and purifying krypton and xenon | |
CN104262376A (en) | TMSOTf (trimethylsilyl trifluoromethanesulfonate) purifying method | |
CN111004088A (en) | Method and device for purifying octafluorocyclobutane gas | |
CN111715028A (en) | Product diversified helium high-yield separation and purification coupling process | |
CN115105850B (en) | Electronic grade trichlorosilane purifying device and method | |
CN101634515B (en) | Method for extracting high-yield pure krypton and pure xenon by full distillation | |
CN211871827U (en) | Device for purifying octafluorocyclobutane gas | |
CN108502889A (en) | The separation of polysilicon cold hydrogenation product and purifying plant and method | |
CN106276799B (en) | A kind of preparation method and device of electronic grade high-purity chlorine | |
CN113582192A (en) | Boron trichloride purification device | |
CN114353434A (en) | Device and method for concentrating krypton and xenon through low-temperature rectification | |
CN212687558U (en) | Hydrogen bromide's purification device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |