CN210693765U - IGBT parallel drive adapter circuit and circuit board - Google Patents
IGBT parallel drive adapter circuit and circuit board Download PDFInfo
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- CN210693765U CN210693765U CN201921203372.9U CN201921203372U CN210693765U CN 210693765 U CN210693765 U CN 210693765U CN 201921203372 U CN201921203372 U CN 201921203372U CN 210693765 U CN210693765 U CN 210693765U
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Abstract
The utility model belongs to the technical field of IGBT drive, a parallel drive adapter circuit of IGBT is provided, in the circuit, one end of a resistor R1 is electrically connected with the collecting electrode of a first IGBT, one end of a resistor R5 is electrically connected with the collecting electrode of a second IGBT, and the other end of the resistor R1 is electrically connected with the other end of the resistor R5; one end of a resistor R2 is electrically connected with the gate electrode of the first IGBT, one end of a resistor R6 is electrically connected with the gate electrode of the second IGBT, and the other end of the resistor R2 is electrically connected with the other end of the resistor R6; one end of the resistor R3 is electrically connected with the emitter of the first IGBT, one end of the resistor R7 is electrically connected with the gate of the second IGBT, and the other end of the resistor R3 is electrically connected with the other end of the resistor R7. The utility model discloses can flow equalize by the developments, balanced IGBT on-off time optimizes the gate pole return circuit of parallelly connected unit for the lead wire in gate pole return circuit is shorter, and the loop area is little, and drive circuit's impedance is low, and the interference killing feature is big.
Description
Technical Field
The utility model belongs to the technical field of the IGBT drive, concretely relates to parallelly connected drive adapter circuit of IGBT and circuit board.
Background
At present, the high-power IGBT is generally used in a high-power driver, but the IGBT with the higher power level in the market has the advantages of less yield, high cost and long delivery time, and in order to avoid the influences, the IGBT parallel circuit is a very advantageous method. For a high-power driver, a plurality of IGBTs with smaller power levels are connected in parallel to form a basic unit at a glance to replace a single IGBT with a high power level.
In the parallel application of the IGBTs, the current flowing through each branch in the parallel circuit of the IGBTs may be unbalanced due to the inconsistency of the parameters of the IGBTs and the driving circuits thereof. Part of the IGBTs are subjected to larger electrical stress, and the devices are damaged after long-term operation, and the damage of the part of the IGBTs further causes the total damage of the rest of the IGBTs.
Disclosure of Invention
The utility model aims to solve the technical problem to provide a parallelly connected drive adaptation circuit of IGBT and circuit board to prior art's current situation, satisfy the parallelly connected drive circuit homodromous nature of IGBT, optimize the gate pole return circuit of parallelly connected unit, compare in common wire connected mode on the market, the lead wire of PCB gate pole return circuit is shorter, loop area is little, drive circuit's impedance is low, and the interference killing feature is big.
The utility model provides a technical scheme that above-mentioned technical problem adopted does: an IGBT parallel driving adapter circuit comprises an IGBT parallel unit;
the IGBT parallel unit comprises a first IGBT, a second IGBT, a resistor R1, a resistor R2, a resistor R3, a resistor R5, a resistor R6 and a resistor R7; the first IGBT is connected with the second IGBT in parallel;
one end of the resistor R1 is electrically connected with the collector electrode of the first IGBT, one end of the resistor R5 is electrically connected with the collector electrode of the second IGBT, and the other end of the resistor R1 is electrically connected with the other end of the resistor R5;
one end of the resistor R2 is electrically connected with the gate electrode of the first IGBT, one end of the resistor R6 is electrically connected with the gate electrode of the second IGBT, and the other end of the resistor R2 is electrically connected with the other end of the resistor R6;
one end of the resistor R3 is electrically connected with the emitter of the first IGBT, one end of the resistor R7 is electrically connected with the gate of the second IGBT, and the other end of the resistor R3 is electrically connected with the other end of the resistor R7.
According to the IGBT parallel drive adapting circuit, a diode D1 and a transient suppression diode TVS1 are connected in series between the collector and the gate of the first IGBT, the cathode of the diode D1 is connected with one end of a resistor R2 and the gate of the first IGBT, the anode of the diode D1 is connected with the anode of a transient suppression diode TVS1, and the cathode of the transient suppression diode TVS1 is connected with the collector of the first IGBT;
a diode D2 and a transient suppression diode TVS2 are connected in series between the collector and the gate of the second IGBT, the cathode of the diode D2 is connected with one end of a resistor R6 and the gate of the second IGBT, the anode of the diode D2 is connected with the anode of the transient suppression diode TVS2, and the cathode of the transient suppression diode TVS2 is connected with the collector of the first IGBT.
According to the IGBT parallel driving adaptive circuit, a gate capacitor C1, a resistor R4 and a bidirectional transient suppression diode ZD1 are further connected in parallel between the gate and the emitter of the first IGBT, one end of the gate capacitor C1 is respectively connected with the gate of the first IGBT, one end of the resistor R4, one end of the bidirectional transient suppression diode ZD1 and one end of the resistor R2, and the other end of the gate capacitor C1 is respectively connected with the emitter of the first IGBT, the other end of the resistor R4, the other end of the bidirectional transient suppression diode ZD1 and one end of the resistor R3;
a gate capacitor C2, a resistor R8 and a bidirectional transient suppression diode ZD2 are further connected in parallel between the gate and the emitter of the second IGBT, one end of the gate capacitor C2 is respectively connected with the gate of the second IGBT, one end of the resistor R8, one end of the bidirectional transient suppression diode ZD2 and one end of the resistor R6, and the other end of the gate capacitor C2 is respectively connected with the emitter of the second IGBT, the other end of the resistor R8, the other end of the bidirectional transient suppression diode ZD2 and one end of the resistor R7.
According to the IGBT parallel driving adaptive circuit, common-mode inductors L1 are electrically connected between the G pole and the E pole of the IGBT parallel unit and the gate pole and the emitter of the first IGBT; the interface 1 and the interface 4 of the common-mode inductor L1 are electrically connected with the E pole and the G pole of the IGBT parallel unit, respectively, and the interface 3 and the interface 2 of the common-mode inductor L1 are electrically connected with the gate pole and the emitter of the second IGBT through the resistor R2 and the resistor R3, respectively;
common-mode inductors L2 are further electrically connected between the G pole and the E pole of the IGBT parallel unit and the gate pole and the emitter of the second IGBT; the interface 2 and the interface 3 of the common mode inductor L2 are electrically connected with the G pole and the E pole of the IGBT parallel unit respectively, and the interface 1 and the interface 4 of the common mode inductor L2 are electrically connected with the gate pole and the emitter of the second IGBT respectively through the resistor R6 and the resistor R7.
The technical scheme of the utility model still include a circuit board that is used for the parallelly connected drive adapter circuit of IGBT, the circuit board includes first IGBT gate pole return circuit and second IGBT gate pole return circuit, first IGBT gate pole return circuit and second IGBT gate pole return circuit symmetry set up.
The utility model discloses at least, include following beneficial effect:
(1) the switching time of the first IGBT and the second IGBT can be adjusted by increasing the resistors R3 and R7, so that the current equalizing property of the IGBT parallel unit is met, and the circular current of an emitter is restrained;
(2) transient suppression diodes TVS1 and TVS2 are added, so that the voltage between the emitter and the collector of the IGBT is at a reasonable voltage value;
(3) the common-mode inductors L1 and L2 are added, so that the impedance of the common-mode current is increased, and a suppression effect is generated on a common-mode circuit;
(4) the gate pole loop of the IGBT parallel unit is optimized, the PCB wiring is symmetrically distributed, so that the wiring paths of the gate poles of the first IGBT and the second IGBT which are connected in parallel are the same, the wiring from a common point to G, E poles is short, and compared with the common wiring connection in the market, the wiring of the PCB is shorter, the loop area is small, the impedance of a driving loop is low, and the anti-interference capability is high;
(5) a plurality of IGBTs with smaller power levels are connected in parallel to form a basic unit to replace a single IGBT with a high power level, the cost is low, the circuit structure is simple, and only an adapter circuit needs to be added on the basis of a common IGBT driving circuit.
Drawings
Fig. 1 is a circuit schematic diagram of an IGBT parallel driving adapter circuit and a circuit board of the present invention;
FIG. 2 is a circuit board wiring diagram of the IGBT parallel driving adapter circuit and the circuit board of the present invention;
in fig. 2, 1 is a first IGBT gate loop, and 2 is a second IGBT gate loop.
Detailed Description
The following are specific embodiments of the present invention and the accompanying drawings are used to further describe the technical solution of the present invention, but the present invention is not limited to these embodiments.
As shown in fig. 1, an IGBT parallel driving adapter circuit includes an IGBT parallel unit; the IGBT parallel unit comprises a first IGBT, a second IGBT, a resistor R1, a resistor R2, a resistor R3, a resistor R5, a resistor R6 and a resistor R7; the first IGBT is connected in parallel with the second IGBT.
One end of the resistor R1 is electrically connected with the collector of the first IGBT, one end of the resistor R5 is electrically connected with the collector of the second IGBT, the other end of the resistor R1 is electrically connected with the other end of the resistor R5, and the joint of the resistor R1 and the resistor R5 forms the C pole of the IGBT parallel unit.
One end of the resistor R2 is electrically connected with the gate electrode of the first IGBT, one end of the resistor R6 is electrically connected with the gate electrode of the second IGBT, the other end of the resistor R2 is electrically connected with the other end of the resistor R6, and the connecting part of the resistor R2 and the resistor R6 forms the G pole of the IGBT parallel unit.
One end of the resistor R3 is electrically connected with the emitter of the first IGBT, one end of the resistor R7 is electrically connected with the gate of the second IGBT, the other end of the resistor R3 is electrically connected with the other end of the resistor R7, and the connection part of the resistor R3 and the resistor R7 forms the E pole of the IGBT parallel unit.
The resistors R3 and R7 are emitter driving resistors of the first IGBT and the second IGBT respectively and are used for dynamic current sharing of the circuit and balancing the switching time of the IGBTs; due to the difference of parallel circuit components and the inconsistency of the parameters of the IGBTs, the switching time of the first IGBT and the second IGBT which are connected in parallel is different; in this case, the stray inductance of the parallel busbar can cause the alternating busbar to be superimposed with an induced current, namely emitter circular current, and the switching time of the alternating busbar and the emitter circular current can be adjusted by increasing the resistors R3 and R7.
The specific adjustment process is as follows: supposing that the first IGBT is switched on earlier than the second IGBT, the emitter current generated by the first IGBT can increase the voltage at two ends of the resistor R3, reduce the voltage at two ends of the resistor R7, further cause the gate voltage of the first IGBT to be reduced, increase the gate voltage of the second IGBT, thereby reducing the switching speed of the first IGBT, increasing the switching speed of the second IGBT, finally achieving dynamic current sharing and balancing the switching time of the IGBTs.
Furthermore, a diode D1 and a transient suppression diode TVS1 are connected in series between the collector and the gate of the first IGBT, the cathode of the diode D1 is connected to one end of a resistor R2 and the gate of the first IGBT, the anode of the diode D1 is connected to the anode of the transient suppression diode TVS1, and the cathode of the transient suppression diode TVS1 is connected to the collector of the first IGBT.
A diode D2 and a transient suppression diode TVS2 are connected in series between the collector and the gate of the second IGBT, the cathode of the diode D2 is connected with one end of a resistor R6 and the gate of the second IGBT, the anode of the diode D2 is connected with the anode of the transient suppression diode TVS2, and the cathode of the transient suppression diode TVS2 is connected with the collector of the first IGBT.
When the IGBT is turned off, the voltage between the collector and emitter of the IGBT generates a high surge voltage due to the large stray inductance and the current rising rate, and an excessively high surge voltage may cause overvoltage damage to the IGBT.
The utility model discloses a transient suppression diode TVS1, TVS2 for collecting electrode clamp circuit, when surge voltage was too high to make collecting electrode voltage surpass transient suppression diode TVS1, TVS2 threshold value, transient suppression diode TVS1, TVS2 switched on and charge to the gate pole, gate pole lifting voltage reduces the electric current rising rate, thereby makes IGBT collecting electrode and interelectrode voltage be in reasonable voltage value.
Furthermore, a gate capacitor C1, a resistor R4 and a bidirectional transient suppression diode ZD1 are connected in parallel between the gate and the emitter of the first IGBT, one end of the gate capacitor C1 is connected to the gate of the first IGBT, one end of the resistor R4, one end of the bidirectional transient suppression diode ZD1 and one end of the resistor R2, respectively, and the other end of the gate capacitor C1 is connected to the emitter of the first IGBT, the other end of the resistor R4, the other end of the bidirectional transient suppression diode ZD1 and one end of the resistor R3, respectively.
A gate capacitor C2, a resistor R8 and a bidirectional transient suppression diode ZD2 are further connected in parallel between the gate and the emitter of the second IGBT, one end of the gate capacitor C2 is connected with the gate of the second IGBT, one end of the resistor R8, one end of the bidirectional transient suppression diode ZD2 and one end of the resistor R6, respectively, and the other end of the gate capacitor C2 is connected with the emitter of the second IGBT, the other end of the resistor R8, the other end of the bidirectional transient suppression diode ZD2 and one end of the resistor R7, respectively.
Bidirectional transient suppression diodes ZD1 and ZD2 respectively discharge gate capacitors C1 and C2 to prevent the IGBT from being accidentally turned on, and protect the gate of the IGBT to prevent the gate voltage from being too high.
Furthermore, common-mode inductors L1 are electrically connected between the G pole and the E pole of the IGBT parallel unit and the gate pole and the emitter of the first IGBT; the interface 1 and the interface 4 of the common mode inductor L1 are electrically connected with the E pole and the G pole of the IGBT parallel unit, respectively, and the interface 3 and the interface 2 of the common mode inductor L1 are electrically connected with the gate pole and the emitter of the second IGBT through the resistor R2 and the resistor R3, respectively.
Common-mode inductors L2 are electrically connected between the G pole and the E pole of the IGBT parallel unit and the gate pole and the emitter of the second IGBT; the interface 2 and the interface 3 of the common mode inductor L2 are electrically connected with the G pole and the E pole of the IGBT parallel unit, respectively, and the interface 1 and the interface 4 of the common mode inductor L2 are electrically connected with the gate pole and the emitter of the second IGBT through a resistor R6 and a resistor R7, respectively.
Because coupling capacitance exists between the IGBT and the radiator, gate pole common mode circulating current of the IGBT is caused; the gate common-mode loop current may form an oscillating circuit, thereby affecting the gate driving function of the IGBT, and the common-mode current is suppressed by increasing the common-mode inductors L1 and L2 to increase the impedance of the common-mode current.
As shown in FIG. 2, the circuit board for the IGBT parallel driving adapter circuit comprises a first IGBT gate pole loop 1 and a second IGBT gate pole loop 2, wherein the first IGBT gate pole loop and the second IGBT gate pole loop are symmetrically arranged.
The utility model discloses optimize parallelly connected unit's gate pole return circuit, adopt the PCB of symmetric distribution to walk the line for the route of parallelly connected first IGBT and second IGBT gate pole is the same, and from the common point extremely to G, E walking the line short, compares in common on the market with the wire connection, and PCB's gate pole lead wire is shorter, and loop area is little, and the impedance of drive circuit is low, and the interference killing feature is big.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications, additions and substitutions for the specific embodiments described herein will be apparent to those skilled in the art without departing from the scope and spirit of the invention as defined in the accompanying claims.
Claims (5)
1. An IGBT parallel driving adapter circuit is characterized by comprising an IGBT parallel unit;
the IGBT parallel unit comprises a first IGBT, a second IGBT, a resistor R1, a resistor R2, a resistor R3, a resistor R5, a resistor R6 and a resistor R7; the first IGBT is connected with the second IGBT in parallel;
one end of the resistor R1 is electrically connected with the collector electrode of the first IGBT, one end of the resistor R5 is electrically connected with the collector electrode of the second IGBT, and the other end of the resistor R1 is electrically connected with the other end of the resistor R5;
one end of the resistor R2 is electrically connected with the gate electrode of the first IGBT, one end of the resistor R6 is electrically connected with the gate electrode of the second IGBT, and the other end of the resistor R2 is electrically connected with the other end of the resistor R6;
one end of the resistor R3 is electrically connected with the emitter of the first IGBT, one end of the resistor R7 is electrically connected with the gate of the second IGBT, and the other end of the resistor R3 is electrically connected with the other end of the resistor R7.
2. The IGBT parallel drive adaptation circuit as claimed in claim 1, wherein a diode D1 and a transient suppression diode TVS1 are connected in series between the collector and the gate of the first IGBT, the cathode of the diode D1 is connected with one end of a resistor R2 and the gate of the first IGBT, the anode of the diode D1 is connected with the anode of a transient suppression diode TVS1, and the cathode of the transient suppression diode TVS1 is connected with the collector of the first IGBT;
a diode D2 and a transient suppression diode TVS2 are connected in series between the collector and the gate of the second IGBT, the cathode of the diode D2 is connected with one end of a resistor R6 and the gate of the second IGBT, the anode of the diode D2 is connected with the anode of the transient suppression diode TVS2, and the cathode of the transient suppression diode TVS2 is connected with the collector of the first IGBT.
3. The IGBT parallel drive adaptive circuit according to claim 1, wherein a gate capacitor C1, a resistor R4 and a bidirectional transient suppression diode ZD1 are further connected in parallel between the gate and the emitter of the first IGBT, one end of the gate capacitor C1 is respectively connected with the gate of the first IGBT, one end of the resistor R4, one end of the bidirectional transient suppression diode ZD1 and one end of the resistor R2, and the other end of the gate capacitor C1 is respectively connected with the emitter of the first IGBT, the other end of the resistor R4, the other end of the bidirectional transient suppression diode ZD1 and one end of the resistor R3;
a gate capacitor C2, a resistor R8 and a bidirectional transient suppression diode ZD2 are further connected in parallel between the gate and the emitter of the second IGBT, one end of the gate capacitor C2 is respectively connected with the gate of the second IGBT, one end of the resistor R8, one end of the bidirectional transient suppression diode ZD2 and one end of the resistor R6, and the other end of the gate capacitor C2 is respectively connected with the emitter of the second IGBT, the other end of the resistor R8, the other end of the bidirectional transient suppression diode ZD2 and one end of the resistor R7.
4. The IGBT parallel drive adapter circuit of claim 1, wherein common-mode inductors L1 are electrically connected between the G pole and the E pole of the IGBT parallel unit and the gate and the emitter of the first IGBT; the interface 1 and the interface 4 of the common-mode inductor L1 are electrically connected with the E pole and the G pole of the IGBT parallel unit, respectively, and the interface 3 and the interface 2 of the common-mode inductor L1 are electrically connected with the gate pole and the emitter of the second IGBT through the resistor R2 and the resistor R3, respectively;
common-mode inductors L2 are further electrically connected between the G pole and the E pole of the IGBT parallel unit and the gate pole and the emitter of the second IGBT; the interface 2 and the interface 3 of the common mode inductor L2 are electrically connected with the G pole and the E pole of the IGBT parallel unit respectively, and the interface 1 and the interface 4 of the common mode inductor L2 are electrically connected with the gate pole and the emitter of the second IGBT respectively through the resistor R6 and the resistor R7.
5. A circuit board for the IGBT parallel drive adaptation circuit according to any one of claims 1 to 4, characterized by comprising a first IGBT gate loop and a second IGBT gate loop, wherein the first IGBT gate loop and the second IGBT gate loop are symmetrically arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921203372.9U CN210693765U (en) | 2019-07-29 | 2019-07-29 | IGBT parallel drive adapter circuit and circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921203372.9U CN210693765U (en) | 2019-07-29 | 2019-07-29 | IGBT parallel drive adapter circuit and circuit board |
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| Publication Number | Publication Date |
|---|---|
| CN210693765U true CN210693765U (en) | 2020-06-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921203372.9U Expired - Fee Related CN210693765U (en) | 2019-07-29 | 2019-07-29 | IGBT parallel drive adapter circuit and circuit board |
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| CN (1) | CN210693765U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110601510A (en) * | 2019-07-29 | 2019-12-20 | 宁波安信数控技术有限公司 | IGBT parallel drive adapter circuit and circuit board |
-
2019
- 2019-07-29 CN CN201921203372.9U patent/CN210693765U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110601510A (en) * | 2019-07-29 | 2019-12-20 | 宁波安信数控技术有限公司 | IGBT parallel drive adapter circuit and circuit board |
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