CN210668326U - Shell for power semiconductor device - Google Patents
Shell for power semiconductor device Download PDFInfo
- Publication number
- CN210668326U CN210668326U CN201922107669.1U CN201922107669U CN210668326U CN 210668326 U CN210668326 U CN 210668326U CN 201922107669 U CN201922107669 U CN 201922107669U CN 210668326 U CN210668326 U CN 210668326U
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- Prior art keywords
- shell
- semiconductor device
- combined
- combined shell
- power semiconductor
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Abstract
The utility model discloses a casing for power semiconductor device belongs to the semiconductor housing field, including combination shell a and combination shell b, be connected through the connecting axle between combination shell b and the combination shell a, top shell and drain pan are fixed mounting respectively to the top and the bottom of combination shell a and combination shell b, the mounting groove has been seted up to the inside of top shell, the internally mounted of mounting groove has buffer spring, all install through buffer spring on the front of combination shell a and combination shell b and the back outer wall and prevent falling buffering curb plate, set up the wiring mouth on one side outer wall of combination shell b, the inside of combination shell b is provided with the plastics substrate, one side of plastics substrate is provided with the insulating layer; the utility model relates to a for the combination formula, when installing semiconductor device, directly part the casing install can, installation space is big, and the later stage is also comparatively convenient if need inspect semiconductor device.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor housing, concretely relates to a casing for power semiconductor device.
Background
The semiconductor device is an electronic device having a conductivity between a good conductor and an insulator and performing a specific function by utilizing the special electrical characteristics of a semiconductor material, and is used for generating, controlling, receiving, converting, amplifying a signal and performing energy conversion. For the purpose of distinction from integrated circuits, they are sometimes also referred to as discrete devices. The basic structure of most two-terminal devices (i.e., crystal diodes) is a PN junction.
Semiconductor device is when the installation is used, need install in the semiconductor device casing, and traditional casing generally adopts ordinary plastic box, and is not provided with any structural reinforcement in inside, leads to shell structure intensity extremely low, when meeting external force impact or external pressure, and the casing is fragile, can't produce good protection effect to semiconductor device, needs to carry out certain improvement.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a casing for power semiconductor device to solve the traditional casing that proposes in the above-mentioned background art and generally adopt ordinary plastic box, and not be provided with any structural reinforcement in inside, lead to shell structure intensity extremely low, when meeting external force and assault or external pressure, the casing is fragile, can't produce the problem of good protection effect to semiconductor device.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a casing for power semiconductor device, includes combination shell an and combination shell b, be connected through the connecting axle between combination shell b and the combination shell a, there are top shell and drain pan at combination shell an and combination shell b's top and bottom respectively fixed mounting, the mounting groove has been seted up to the inside of top shell, the internally mounted of mounting groove has buffer spring, all install through buffer spring on combination shell an and combination shell b's the front and the back outer wall and prevent falling the buffering curb plate, the wiring mouth has been seted up on one side outer wall of combination shell b, slidable mounting has the enclosing cover on fixed mounting's the slide rail on the lateral wall of wiring mouth, combination shell b's inside is provided with the plastics substrate, one side of plastics substrate is provided with the insulating layer.
By adopting the scheme, the semiconductor device is arranged in the combined shell b, after the semiconductor device is arranged, one end of a lead connected with the semiconductor device penetrates out through the wiring port, the combined shell a is closed, and the combined shell a and the combined shell b are connected through the connecting shaft, in the using process, when the shell falls down, the buffer spring and the anti-falling buffer plate can provide effective buffer action to avoid the semiconductor device in the shell from being damaged, and the anti-falling effect is good, when the shell is impacted by external force or external pressure, the structural reinforcing column can provide effective supporting force to avoid the pressure from directly pressing the semiconductor device, the structural strength of the whole shell is also improved, effective protection effect is generated on the semiconductor device, the high temperature resistance and the insulativity of the shell are greatly improved by the high temperature resistant material layer and the insulating layer, the use safety of the semiconductor device is ensured, and when the semiconductor device needs to be checked, the combined shell a and the combined shell b are directly opened for inspection, and the inspection is convenient.
In the above scheme, it should be noted that the high temperature resistant material layer may be made of glass fiber, and the insulating layer may be made of resin.
As a preferred embodiment, the top of the buffer spring is fixedly provided with an anti-falling buffer top plate, and the outer surfaces of the anti-falling buffer top plate and the anti-falling buffer side plates are both provided with wear-resistant material layers.
Adopt above-mentioned scheme, through installing and prevent falling the buffering roof and prevent falling the buffering curb plate, when this casing fell, the spring can provide cushioning effect effectively, avoided the semiconductor device in the casing to damage, had good and prevent falling the effect, and the wearing layer can effectively improve and prevent falling the surface wearability of buffering roof and preventing falling the buffering curb plate.
In a preferred embodiment, a projection is fixedly mounted on an outer wall of one side of the outer cover, and friction damping is provided between the outer cover and the sliding rail.
Adopt above-mentioned scheme, through installing the lug, the accessible lug realizes the switching to the enclosing cover, through setting up the damping, when the slip enclosing cover, need exert certain power, avoids the enclosing cover landing under the condition of no external force.
In a preferred embodiment, a structural reinforcing column is fixedly mounted on the inner wall of the combined shell b, and one end of the structural reinforcing column is in contact with and pressed against the top surface of the combined shell a.
Adopt above-mentioned scheme, through installing the structure and strengthening the post, when the casing runs into external force and assaults or external pressure, the structure is strengthened the post and can be provided holding power effectively, avoids pressure directly to press semiconductor device, has also promoted the structural strength of whole casing, produces effective protection effect to semiconductor device.
In a preferred embodiment, the size of the combined shell a is the same as that of the combined shell b, and there is no gap between the combined shells.
By adopting the scheme, the tightness of the combination between the combined shell a and the combined shell b is effectively improved.
In a preferred embodiment, a high temperature resistant material layer is disposed on one side of the insulating layer, and the high temperature resistant material layer is disposed in the combined housing a and the combined housing b, respectively.
By adopting the scheme, the high-temperature resistant material layers are arranged in the combined shell a and the combined shell b, so that the overall high-temperature resistance of the shell of the semiconductor device is improved, and the service life is long.
Compared with the prior art, the beneficial effects of the utility model are that:
the shell for the power semiconductor device is designed to be combined, when the semiconductor device is installed, the shell is directly separated for installation, the installation space is large, and the semiconductor device can be conveniently checked in the later period if needed;
the shell for the power semiconductor device is internally provided with the structural reinforcing column, when the shell is subjected to external force impact or external pressure, the structural reinforcing column can provide effective supporting force, the pressure is prevented from being directly pressed on the semiconductor device, the structural strength of the whole shell is improved, and an effective protection effect is generated on the semiconductor device;
according to the shell for the power semiconductor device, the anti-falling buffer plate with the spring is mounted, when the shell falls, the spring can provide an effective buffer effect, the semiconductor device in the shell is prevented from being damaged, and a good anti-falling effect is achieved;
the shell for the power semiconductor device is internally provided with the high-temperature-resistant material layer and the insulating layer, so that the high-temperature resistance and the insulativity of the shell are greatly improved, and the use safety of the semiconductor device is ensured.
Drawings
Fig. 1 is a schematic structural view of the present invention;
fig. 2 is a schematic perspective view of the combined housing b of the present invention;
fig. 3 is an enlarged schematic view of the utility model at a;
fig. 4 is a schematic structural view of a cross-sectional material of the combined housing a of the present invention.
In the figure: 1. a top shell; 2. a buffer spring; 3. mounting grooves; 4. the anti-falling buffer top plate; 5. a combined shell a; 6. a combined shell b; 7. a bottom case; 8. a connecting shaft; 9. a structural reinforcement column; 10. the anti-falling buffer side plate; 11. a bump; 12. a slide rail; 13. a wiring port; 14. an outer cover; 15. a high temperature resistant material layer; 16. an insulating layer; 17. a plastic substrate.
Detailed Description
The present invention will be further described with reference to the following examples.
The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention. The condition in the embodiment can be further adjusted according to concrete condition the utility model discloses a it is right under the design prerequisite the utility model discloses a simple improvement of method all belongs to the utility model discloses the scope of claiming.
The utility model provides a casing for power semiconductor device, please refer to fig. 1-4, including combination shell a5 and combination shell b6, connect through connecting axle 8 between combination shell b6 and the combination shell a5, fixedly install structure enhancement post 9 on the inner wall of combination shell b6, and structure enhancement post 9 one end and the top surface of combination shell a5 contact each other and extrude (see fig. 1 and 2); through installing structural reinforcement post 9, when the casing meets external force impact or external pressure, structural reinforcement post 9 can provide the holding power effectively, avoids pressure directly to press the semiconductor device, has also promoted the structural strength of whole casing, produces effective protection effect to the semiconductor device.
The top and the bottom of the combined shell a5 and the combined shell b6 are respectively and fixedly provided with a top shell 1 and a bottom shell 7, the combined shell a5 and the combined shell b6 have the same size, and no gap exists between the combined shell a5 and the combined shell b6 (see fig. 1); the tightness of the combination between the combined casing a5 and the combined casing b6 is effectively improved.
An installation groove 3 is formed in the top shell 1, a buffer spring 2 is installed in the installation groove 3, an anti-falling buffer top plate 4 is fixedly installed at the top of the buffer spring 2, and wear-resistant material layers are arranged on the outer surfaces of the anti-falling buffer top plate 4 and the anti-falling buffer side plate 10 (see fig. 1 and 2); through installing and preventing falling buffer roof 4 and preventing falling buffer side board 10, when this casing fell, the spring can provide the cushioning effect effectively, avoided the semiconductor device in the casing to damage, had good the effect of falling, and the wearing layer can effectively improve and prevent falling buffer roof 4 and prevent falling the surface wearability of buffer side board 10.
The front and back outer walls of the combined shell a5 and the combined shell b6 are respectively provided with an anti-falling buffer side plate 10 through a buffer spring 2, the outer wall of one side of the combined shell b6 is provided with a wiring port 13, a sliding rail 12 fixedly arranged on the side wall of the wiring port 13 is provided with an outer cover 14 in a sliding way, the outer wall of one side of the outer cover 14 is fixedly provided with a convex block 11, and friction damping is arranged between the outer cover 14 and the sliding rail 12 (see fig. 2 and 3); through installing lug 11, accessible lug 11 realizes the switching to enclosing cover 14, through setting up the damping, when slip enclosing cover 14, need exert certain power, avoids enclosing cover 14 landing under the condition of no external force.
A plastic substrate 17 is arranged inside the combined shell b6, an insulating layer 16 is arranged on one side of the plastic substrate 17, a high-temperature-resistant material layer 15 is arranged on one side of the insulating layer 16, and the high-temperature-resistant material layers 15 are respectively arranged in the combined shell a5 and the combined shell b6 (see fig. 1 and 4); high-temperature-resistant material layers 15 are arranged in the combined shell a5 and the combined shell b6, so that the overall high-temperature resistance of the semiconductor device shell is improved, and the service life is long.
When the combined shell is used, a semiconductor device is installed in the combined shell b6, after the combined shell b6 is installed, one end of a lead connected with the semiconductor device penetrates out through the wiring port 13, the combined shell a5 is closed, the combined shell a5 and the combined shell b6 are connected through the connecting shaft 8, in the using process, when the shell falls, the buffer spring 2 and the anti-falling buffer plate can provide effective buffer action to avoid the semiconductor device in the shell from being damaged, the combined shell has good anti-falling effect, when the shell is subjected to external force impact or external pressure, the structural reinforcing column 9 can provide effective supporting force to avoid the pressure from directly pressing the semiconductor device, the structural strength of the whole shell is also improved, the effective protection effect on the semiconductor device is generated, the high-temperature resistance and the insulativity of the shell are greatly improved by the high-temperature resistant material layer 15 and the insulating layer 16, and the use safety of the, when the semiconductor device is to be inspected, the combined case a5 and the combined case b6 may be opened directly for inspection.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A housing for a power semiconductor device, comprising a combined casing a (5) and a combined casing b (6), characterized in that: the combined shell b (6) is connected with the combined shell a (5) through a connecting shaft (8), the top and the bottom of the combined shell a (5) and the combined shell b (6) are respectively and fixedly provided with a top shell (1) and a bottom shell (7), an installation groove (3) is arranged in the top shell (1), a buffer spring (2) is arranged in the installation groove (3), the front and back outer walls of the combined shell a (5) and the combined shell b (6) are respectively provided with an anti-falling buffer side plate (10) through a buffer spring (2), a wiring port (13) is arranged on the outer wall of one side of the combined shell b (6), an outer cover (14) is arranged on a sliding rail (12) fixedly arranged on the side wall of the wiring port (13) in a sliding way, and a plastic base material (17) is arranged in the combined shell b (6), and an insulating layer (16) is arranged on one side of the plastic base material (17).
2. A housing for a power semiconductor device according to claim 1, characterized in that: the top fixed mounting of buffer spring (2) has prevents falling buffering roof (4), prevent falling buffering roof (4) and prevent falling all to be provided with the wearing material layer on the surface of buffering curb plate (10).
3. A housing for a power semiconductor device according to claim 1, characterized in that: the outer wall of one side of the outer cover (14) is fixedly provided with a convex block (11), and friction damping is arranged between the outer cover (14) and the sliding rail (12).
4. A housing for a power semiconductor device according to claim 1, characterized in that: and a structural reinforcing column (9) is fixedly arranged on the inner wall of the combined shell b (6), and one end of the structural reinforcing column (9) is in mutual contact with and extrudes the top surface of the combined shell a (5).
5. A housing for a power semiconductor device according to claim 1, characterized in that: the combined shell a (5) and the combined shell b (6) are consistent in size, and no gap exists between the combined shell a (5) and the combined shell b (6).
6. A housing for a power semiconductor device according to claim 1, characterized in that: and a high-temperature-resistant material layer (15) is arranged on one side of the insulating layer (16), and the high-temperature-resistant material layer (15) is respectively arranged in the combined shell a (5) and the combined shell b (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922107669.1U CN210668326U (en) | 2019-11-29 | 2019-11-29 | Shell for power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922107669.1U CN210668326U (en) | 2019-11-29 | 2019-11-29 | Shell for power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210668326U true CN210668326U (en) | 2020-06-02 |
Family
ID=70814704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922107669.1U Expired - Fee Related CN210668326U (en) | 2019-11-29 | 2019-11-29 | Shell for power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210668326U (en) |
-
2019
- 2019-11-29 CN CN201922107669.1U patent/CN210668326U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200602 Termination date: 20211129 |