CN210628458U - Capacitive coupling structure of dielectric waveguide filter and dielectric waveguide filter - Google Patents
Capacitive coupling structure of dielectric waveguide filter and dielectric waveguide filter Download PDFInfo
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- CN210628458U CN210628458U CN201921775442.8U CN201921775442U CN210628458U CN 210628458 U CN210628458 U CN 210628458U CN 201921775442 U CN201921775442 U CN 201921775442U CN 210628458 U CN210628458 U CN 210628458U
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- 238000010168 coupling process Methods 0.000 title claims abstract description 76
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 76
- 230000008878 coupling Effects 0.000 title claims abstract description 73
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 238000007747 plating Methods 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 239000000523 sample Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims 3
- 239000011248 coating agent Substances 0.000 abstract description 18
- 238000010586 diagram Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 2
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- 230000010354 integration Effects 0.000 description 1
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Abstract
The application belongs to the technical field of filters, and provides a capacitive coupling structure of a dielectric waveguide filter and the dielectric waveguide filter, the surface of the dielectric waveguide filter is covered with a first metal coating, the capacitive coupling structure comprises a closed-loop gap arranged between two adjacent resonance units, two blind holes are arranged in the closed-loop gap, the inner side walls of the two blind holes and the surface area of the medium body between the two blind holes are provided with a second metal coating, the second metal plating layer and the first metal plating layer are isolated by the closed-loop gap, and the closed-loop gap enables the second metal plating layer to form a coupling probe, therefore, adjacent resonance units are subjected to capacitive coupling, and the problems of complex implementation mode, difficult debugging and the like of the conventional filter in the aspects of improving the frequency selection and the out-of-band rejection characteristic of the filter are solved.
Description
Technical Field
The present application relates to the field of filter technology, and in particular, to a capacitive coupling structure for a dielectric waveguide filter and a dielectric waveguide filter.
Background
With the continuous development of modern communication technology, the performance index requirements of the filter are higher and higher. The dielectric waveguide filter has small size, high Q value, low cost and other features, and may be used in communication system with high miniaturization and integration level. However, with the continuous development of multi-frequency systems, the requirements for the frequency selection characteristic and the out-of-band rejection characteristic of the filter are higher and higher.
However, the conventional filter has problems of complicated implementation mode, difficult debugging and the like in the aspects of improving the frequency selection and the out-of-band rejection characteristic of the filter.
SUMMERY OF THE UTILITY MODEL
The invention aims to provide a capacitive coupling structure of a dielectric waveguide filter and the dielectric waveguide filter, and aims to solve the problems of complex implementation mode, difficult debugging and the like of the conventional filter in the aspects of improving the frequency selection and the out-of-band rejection characteristic of the filter.
The embodiment of the application provides a capacitive coupling structure of dielectric waveguide filter, dielectric waveguide filter surface covering has first metallic coating, capacitive coupling structure is including locating the closed loop gap between two adjacent resonance units, be equipped with two blind holes in the closed loop gap, two the inside wall and two of blind hole the medium body surface region between the blind hole is equipped with second metallic coating, second metallic coating with by between the first metallic coating closed loop gap is isolated, just closed loop gap makes second metallic coating forms a coupling probe.
Optionally, two of the blind holes are respectively close to two adjacent resonance units.
Optionally, the bottom surfaces of the two blind holes are respectively provided with a third metal plating layer.
Optionally, a groove is formed between every two adjacent resonance units, the groove is not in contact with the resonance units, the blind holes are located on two opposite sides in the groove respectively, the closed-loop gap is located on the inner side of the groove, and a fourth metal coating is arranged on the inner side wall of the groove.
Optionally, the shape of the blind hole is cylindrical or prismatic.
Optionally, the first metal plating layer and the second metal plating layer are made of metallic silver or metallic copper.
Optionally, the material of the dielectric body is a dielectric material.
Optionally, the material of the dielectric body is a ceramic material.
Optionally, the coupling probe is located on a centerline of the coupling window.
An embodiment of the present application further provides a dielectric waveguide filter, including: a dielectric body, a plurality of resonant cells, a plurality of coupling windows, and a capacitive coupling structure as described in any one of the above.
The application provides in dielectric waveguide filter's capacitive coupling structure and dielectric waveguide filter, dielectric waveguide filter surface covering has first metallic coating, capacitive coupling structure is including locating the closed loop gap between two adjacent resonance units, be equipped with two blind holes in the closed loop gap, two the inside wall and two of blind hole medium body surface region between the blind hole is equipped with second metallic coating, second metallic coating with by between the first metallic coating closed loop gap is isolated, just closed loop gap makes second metallic coating forms a coupling probe to make adjacent resonance unit take place capacitive coupling, solved the realization mode that current wave filter exists in the aspect of improving wave filter frequency selection and outband rejection characteristic complicated, debug difficult scheduling problem.
Drawings
Fig. 1 is a schematic structural diagram of a dielectric waveguide filter according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a capacitive coupling structure according to a first embodiment of the present application;
fig. 3 is a schematic structural diagram of a capacitive coupling structure according to a second embodiment of the present application;
fig. 4 is a schematic cross-sectional view of a capacitive coupling structure provided in a second embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In the description of the present application, it is to be understood that the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature.
The embodiment of the present application provides a dielectric waveguide filter, and the dielectric waveguide filter in this embodiment includes: the capacitive coupling structure comprises a dielectric body, a plurality of resonance units, a plurality of coupling windows and a capacitive coupling structure arranged between any two adjacent resonance units.
Fig. 1 is a schematic structural diagram of a dielectric waveguide filter according to an embodiment of the present application, and referring to fig. 1, in this embodiment, the dielectric waveguide filter includes four resonance units and four coupling windows, where the four resonance units are a resonance unit 111, a resonance unit 112, a resonance unit 113, and a resonance unit 114, respectively, where each tuning unit includes a tuning blind hole, as shown in fig. 1, the resonance unit 111 includes a tuning blind hole 101, the resonance unit 112 includes a tuning blind hole 102, the resonance unit 113 includes a tuning blind hole 103, and the resonance unit 114 includes a tuning blind hole 104. The coupling window 11 in this embodiment is in a cross shape and may be divided into four sub-coupling windows, the four sub-coupling windows enable the dielectric body 10 to form four tuning units, each tuning unit is provided with a tuning blind hole for adjusting the resonant frequency of the tuning unit, referring to fig. 1, the capacitive coupling structure of this embodiment is formed at the top of one of the sub-coupling windows and is located between the tuning blind hole 103 and the tuning blind hole 104, and the capacitive coupling structure does not interfere with the adjacent tuning blind hole 103 and the tuning blind hole 104, and the capacitive coupling structure may be a capacitive coupling structure in any one of the following embodiments.
Fig. 2 is a schematic structural diagram of a capacitive coupling structure according to a first embodiment of the present application, in this embodiment, a surface of a dielectric waveguide filter is covered with a first metal plating layer, and referring to fig. 2, the capacitive coupling structure in this embodiment includes a closed-loop gap 401 disposed between two adjacent resonant units, a blind hole 201 and a blind hole 202 are disposed in the closed-loop gap 401, and second metal plating layers are disposed on inner side walls of the blind hole 201 and the blind hole 202 and a dielectric body surface region 12 between the blind hole 201 and the blind hole 202, where the second metal plating layer is isolated from the first metal plating layer by the closed-loop gap 401, and the closed-loop gap 401 enables the second metal plating layer to form a coupling probe.
In this embodiment, a plurality of resonant units are formed on the dielectric body 10 by the coupling window 11, each resonant unit may include a tuning blind hole, a metal coupling probe is introduced into the dielectric waveguide filter by forming a closed-loop gap 401 and forming the coupling probe in the closed-loop gap, specifically, referring to fig. 1, the closed-loop gap 401 is located between the tuning blind hole 103 and the tuning blind hole 104, the closed-loop gap 401 is not in contact with the tuning blind hole 103 and the tuning blind hole 104, since the surface of the dielectric waveguide filter is covered by the first metal plating layer, that is, the surface of the dielectric body 10 is completely covered by the first metal plating layer, after the closed-loop gap 401 without the metal plating layer is provided, the blind hole 201 and the blind hole 202 are arranged in the enclosure of the closed-loop gap 401, the metal plating layer on the inner side walls of the blind hole 201 and the blind hole 202 and the surface region 12 of the dielectric, because the closed-loop gap 401 exposes the dielectric body, the second metal plating layer in the enclosure formed by the closed-loop gap 401 is insulated and isolated from the first metal plating layer in the surface area of the dielectric body, and at this time, the second metal plating layer in the enclosure formed by the closed-loop gap 401 can form a coupling probe, and the coupling probe can enable adjacent resonant cells to be capacitively coupled.
Further, in an embodiment, the capacitive coupling strength between the adjacent resonant units can be adjusted by adjusting the shape of the metal plating on the dielectric body surface area 12 between the blind via 201 and the blind via 202, for example, the second metal plating on the dielectric body surface area 12 can be polished to expose the dielectric body 10, so as to adjust the capacitive coupling strength between the resonant unit 113 and the resonant unit 114.
In one embodiment, the blind holes 201 and 202 are respectively close to two adjacent resonance units. Specifically, referring to fig. 2, the blind hole 201 and the blind hole 202 are respectively close to the tuning blind hole 103 and the tuning blind hole 104 in two adjacent resonance units, and further, the blind hole 201 and the blind hole 202 are respectively located at two opposite sides in the closed-loop gap 401.
Further, in one embodiment, the blind holes 201 and 202 are respectively in contact with the closed-loop gap 401, the blind holes 201 and 202 are arranged oppositely, and the inner side walls of the blind holes 201 and 202 are covered with the metal plating. In the present embodiment, the capacitive coupling between the adjacent resonant cells can be adjusted by adjusting the distance between the blind hole 201 and the tuning blind hole 103 or the distance between the blind hole 202 and the tuning blind hole 104, for example, the closer the blind hole 201 and the tuning blind hole 103, the closer the blind hole 202 and the tuning blind hole 104, the stronger the capacitive coupling between the adjacent resonant cells.
In one embodiment, the bottom of the blind via 201 and the blind via 202 are respectively provided with a third metal plating layer. In the present embodiment, the capacitive coupling strength between adjacent resonant cells can be controlled by the depths of the blind holes 201 and 202, wherein the deeper the depths of the blind holes 201 and 202, the greater the capacitive coupling strength between adjacent resonant cells.
Further, the capacitive coupling strength between the resonance unit 113 and the resonance unit 114 may be adjusted by polishing the third metal plating.
In one embodiment, referring to fig. 3 and 4, a groove 301 is formed between two adjacent resonant units, the groove 301 is not in contact with the tuning blind hole, the blind hole 201 and the blind hole 202 are respectively located at two opposite sides in the groove 301, the closed-loop slot 401 is located inside the groove 301, and the inner side wall of the groove 301 is provided with a fourth metal plating layer.
In this embodiment, the non-plated closed loop slot 401 formed inside the bottom surface of the recess 301 forms a flying bar structure with the blind via 201 and the blind via 202 and the plated metal layer therebetween, which can capacitively couple the adjacent resonant cells.
Further, in the present embodiment, the coupling amount of the capacitive coupling between the adjacent resonance units may be adjusted by adjusting the length of the groove 301. Further, the length of the groove 301 may also be determined by the amount of coupling required in advance.
In one embodiment, the blind holes 201 and 202 are cylindrical or prismatic in shape.
In one embodiment, the material of the first metal plating layer and the second metal plating layer is metallic silver or metallic copper.
In this embodiment, the material of the third metal plating layer or the fourth metal plating layer may be at least one of metal silver or metal copper.
In one embodiment, the material of the dielectric body 10 is a non-conductive material.
In one embodiment, the material of the dielectric body 10 is a ceramic material.
In one embodiment, the blind holes 201 and 202 and the coupling probe formed by the metal plating therebetween are located at the center line position of the coupling window 11, or the coupling probe is located at the center line position between two adjacent resonant units
Further, the coupling probe may be formed at a position deviated from the center line of the coupling window 11 or a position deviated from the center line between two adjacent resonance units.
The application provides in dielectric waveguide filter's capacitive coupling structure and dielectric waveguide filter, dielectric waveguide filter surface covering has first metallic coating, capacitive coupling structure is including locating the closed loop gap between two adjacent resonance units, be equipped with two blind holes in the encirclement of closed loop gap, two the inside wall and two of blind hole this body surface region of medium between the blind hole is equipped with second metallic coating, second metallic coating with by between the first metallic coating closed loop gap is isolated, just closed loop gap makes second metallic coating forms a coupling probe to make adjacent resonance unit take place the capacitive coupling, solved the realization mode that current wave filter exists in the aspect of improving wave filter frequency selection and outband rejection characteristic complicated, debug difficult scheduling problem.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. The capacitive coupling structure of the dielectric waveguide filter is characterized in that the capacitive coupling structure comprises a closed-loop gap arranged between two adjacent resonance units, two blind holes are arranged in the closed-loop gap, the inner side walls of the blind holes and the surface area of a dielectric body between the blind holes are provided with second metal coatings, the second metal coatings are isolated from the first metal coatings through the closed-loop gap, and the closed-loop gap enables the second metal coatings to form a coupling probe.
2. The capacitive coupling structure of claim 1, wherein two of said blind holes are respectively adjacent to two of said resonant cells.
3. The capacitive coupling structure of claim 1, wherein the bottom surfaces of two of said blind holes are each provided with a third metallization layer.
4. The capacitive coupling structure of claim 1, wherein a groove is formed between two adjacent resonant units, the groove is not in contact with the tuning blind holes in the resonant units, the two blind holes are respectively located at two opposite sides in the groove, the closed-loop gap is located at the inner side of the groove, and the inner side wall of the groove is provided with a fourth metal plating layer.
5. The capacitive coupling structure of claim 1, wherein the blind hole is cylindrical or prismatic in shape.
6. The capacitive coupling structure of claim 1, wherein the material of the first metallization layer and the second metallization layer is metallic silver or metallic copper.
7. The capacitive coupling structure of claim 1 wherein the material of the dielectric body is a dielectric material.
8. The capacitive coupling structure of claim 1 wherein the material of the dielectric body is a ceramic material.
9. The capacitive coupling structure of claim 1, wherein the coupling probe is located on a centerline of the coupling window.
10. A dielectric waveguide filter, comprising: a dielectric body, a plurality of resonant cells, a plurality of coupling windows, and a capacitive coupling structure as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921775442.8U CN210628458U (en) | 2019-10-21 | 2019-10-21 | Capacitive coupling structure of dielectric waveguide filter and dielectric waveguide filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921775442.8U CN210628458U (en) | 2019-10-21 | 2019-10-21 | Capacitive coupling structure of dielectric waveguide filter and dielectric waveguide filter |
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| Publication Number | Publication Date |
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| CN210628458U true CN210628458U (en) | 2020-05-26 |
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| CN201921775442.8U Active CN210628458U (en) | 2019-10-21 | 2019-10-21 | Capacitive coupling structure of dielectric waveguide filter and dielectric waveguide filter |
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- 2019-10-21 CN CN201921775442.8U patent/CN210628458U/en active Active
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