CN210609159U - 5G terminal signal transmitting and receiving device and terminal - Google Patents
5G terminal signal transmitting and receiving device and terminal Download PDFInfo
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- CN210609159U CN210609159U CN201921773467.4U CN201921773467U CN210609159U CN 210609159 U CN210609159 U CN 210609159U CN 201921773467 U CN201921773467 U CN 201921773467U CN 210609159 U CN210609159 U CN 210609159U
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Abstract
The embodiment of the utility model discloses 5G terminal signal transceiver and terminal belongs to communication technology field. Wherein the apparatus comprises: the radio frequency front-end module is connected with the matching tuning chip; the radio frequency signal transceiver is connected with the radio frequency front end module; the baseband processing unit is connected with the radio frequency signal transceiver; the matching tuning chip is connected with the antenna. The utility model discloses can guarantee that communication signal has the best transmission performance, strengthen terminal send-receive signal's intensity.
Description
Technical Field
The utility model relates to the field of communication technology, in particular to 5G terminal signal transceiver and terminal.
Background
With the development of economy and social progress, consumers put forth new demands on the development of communication technologies, such as higher communication rate, lower network delay, larger network capacity, etc., and the existing mobile communication technologies are difficult to meet future demands, and there is an urgent need to develop new-Generation communication technologies, so that the fifth-Generation mobile communication technologies, 5th Generation mobile networks, 5th Generation with less systems, or 5th-Generation, 5G or 5G technologies for short), have come into play. The fifth generation mobile communication technology is the latest generation cellular mobile communication technology, and is also an extension following 4G (LTE-A, WiMax), 3G (UMTS, LTE) and 2G (gsm) systems. The performance goals of 5G are high data transmission rates, reduced latency, energy savings, reduced cost, increased system capacity, and large-scale device connectivity.
In the prior art, a 5G terminal usually works in a SUB-6GHz frequency band, and meanwhile, the 2G/3G/4G communication must be compatible. With the increase of frequency bands and bandwidths and the requirements of the mobile phone on lightness, thinness and high screen occupation ratio, the performance of the mobile phone antenna tends to decline day by day, the most basic requirements of a user on the mobile phone are influenced, the optimal transmission performance of communication signals cannot be ensured, and the communication experience of the user is poor.
SUMMERY OF THE UTILITY MODEL
The utility model provides a 5G terminal signal send-receiver device and terminal to guarantee that communication signal has the best transmission performance, strengthen terminal send-receiver signal's intensity.
The technical scheme is as follows:
the embodiment of the utility model provides a 5G terminal signal transceiver, it includes: the radio frequency front-end module is connected with the matching tuning chip; the radio frequency signal transceiver is connected with the radio frequency front end module; the baseband processing unit is connected with the radio frequency signal transceiver; the matching tuning chip is connected with the antenna.
In a preferred embodiment of the present invention, the output end of the rf front-end module is connected to a microstrip or a strip-shaped rf transmission line.
In the preferred embodiment of the present invention, the rf front-end module includes at least one, the antenna includes at least one, the 5G terminal signal transceiver further includes a first rf switch, the matching tuning chip includes at least one, each rf front-end module in the at least one rf front-end module is connected to one of the rf signal transceiver, the first rf switch and the at least one matching tuning chip, and the baseband processing unit is further connected to the first rf switch and the matching tuning chip.
In the preferred embodiment of the present invention, the rf front end module includes a low frequency rf front end module, an intermediate frequency rf front end module and a high frequency rf front end module, the 5G terminal signal transceiver further includes a first rf switch, the at least one matching tuning chip includes a first matching tuning chip, a second matching tuning chip and a third matching tuning chip, the low frequency rf front end module is connected to the rf signal transceiver, the first rf switch and the first matching tuning chip, the intermediate frequency rf front end module is connected to the rf signal transceiver, the first rf switch and the second matching tuning chip, and the high frequency rf front end module is connected to the rf signal transceiver, the first rf switch and the third matching tuning chip.
The utility model discloses in the preferred embodiment, the antenna includes low frequency antenna, intermediate frequency antenna and high frequency antenna, the low frequency antenna links to each other with first matching tuning chip, the intermediate frequency antenna links to each other with second matching tuning chip, the high frequency antenna links to each other with third matching tuning chip, baseband processing unit still links to each other with first radio frequency switch, first matching tuning chip, second matching tuning chip and third matching tuning chip.
In a preferred embodiment of the present invention, the first rf switch is a one-out-of-three rf switch.
In a preferred embodiment of the present invention, the low frequency is less than 1GHz, the intermediate frequency is between 1GHz and 3GHz, and the high frequency is between 3GHz and 6 GHz.
The present invention provides an embodiment of the present invention, wherein the high frequency rf front end module, the intermediate frequency rf front end module or the low frequency rf front end module comprises an rf power amplifier, a duplexer group, a multi-path rf switch, a directional coupler, and at least one rf switch, the rf power amplifier comprises an input terminal and an output terminal, the input terminal of the rf power amplifier is connected to the rf signal transceiver, the output terminal of the rf power amplifier is connected to the duplexer group, the duplexer group is connected to the multi-path rf switch, the multi-path rf switch is connected to the output terminal of the corresponding rf front end module, and the at least one rf switch is connected to each other.
In a preferred embodiment of the present invention, the high frequency rf front end module, the intermediate frequency rf front end module or the low frequency rf front end module further includes a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a first impedance, a second impedance, a third impedance, and a fourth impedance, the at least one rf switch includes a second rf switch, a third rf switch, and a fourth rf switch, the fourth rf switch is connected to a direct end of the second rf switch and a direct end of the third rf switch, the fourth rf switch is further connected to an output end of the directional coupler, an output end of the directional coupler is further connected to the first rf switch, and a first output end of the second rf switch is grounded through the first capacitor and the first impedance; the second output end of the second radio frequency switch is grounded through a second capacitor and a second impedance, the second radio frequency switch is also connected with the isolation end of the directional coupler, the first output end of the third radio frequency switch is grounded through a third capacitor and a third impedance, the second output end of the third radio frequency switch is grounded through a fourth capacitor and a fourth impedance, and the third radio frequency switch is also connected with the coupling end of the directional coupler.
In a preferred embodiment of the present invention, the second and third rf switches are single-input multiple-output rf switches, and the fourth rf switch is an alternative rf switch.
In the preferred embodiment of the present invention, the first capacitor, the second capacitor and the third capacitor are electrically tunable variable capacitors, and the first impedance, the second impedance, the third impedance and the fourth impedance are electrically tunable variable impedances.
In a preferred embodiment of the present invention, the duplexer group includes duplexers of a plurality of different frequency bands.
In the preferred embodiment of the present invention, the directional coupler is a microstrip dual directional coupler, the size of which is smaller than one tenth of the wavelength of the communication signal, the coupling degree is greater than 20dB, and the communication signal is an incident signal or a reflected signal.
The embodiment of the utility model provides a terminal is still provided, it includes foretell 5G terminal signal transceiver.
The embodiment of the utility model provides a beneficial effect that technical scheme brought is:
outputting an incident signal and a reflected signal through a radio frequency front end module; the radio frequency signal transceiver detects an incident signal and a reflected signal output by the radio frequency front-end module and then outputs the incident signal and the reflected signal; the baseband processing unit controls the matching tuning chip; the matching tuning chip adjusts the radio frequency front end module. Therefore, the communication signals are transmitted in the optimal state at any time and state of the terminal, the strength of the terminal for receiving and transmitting the signals is enhanced, and the user experience in the aspect of the terminal signals is improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented according to the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more obvious and understandable, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
Fig. 1 is a block diagram of a 5G terminal signal transceiver provided in an embodiment of the present invention;
fig. 2 is a block diagram of a circuit structure of the rf front-end module in fig. 1.
Detailed Description
To further illustrate the technical means and effects of the present invention for achieving the objectives of the present invention, the following detailed description will be made with reference to the accompanying drawings and preferred embodiments of the 5G terminal signal transceiver and the terminal thereof according to the present invention.
The foregoing and other features, aspects and utilities of the present invention will be apparent from the following more particular description of preferred embodiments of the invention as illustrated in the accompanying drawings. While the present invention has been described with reference to the embodiments, the drawings are for illustrative purposes only and are not intended to limit the present invention.
Fig. 1 is a block diagram of a 5G terminal signal transceiver provided in an embodiment of the present invention. The 5G terminal signal receiving and transmitting device can ensure that the communication signal has the best transmission performance and enhance the strength of the terminal for receiving and transmitting the signal. Referring to fig. 1, the 5G terminal signal transceiver of the present embodiment includes: a baseband processing unit 101, a radio frequency signal transceiver 102, a radio frequency front end module 103, a matching tuning chip 10, and an antenna 11.
Specifically, the rf front-end module 103 is connected to the rf signal transceiver 102 and the matching tuning chip 10, and is configured to output an rf incident signal and a rf reflected signal.
Preferably, the rf front-end module 103 is further configured to amplify, receive and filter the rf incident signal and the rf reflected signal. The rf front-end module 103 has a dual directional coupler therein, which can output rf input signals and reflected signals.
And the radio frequency signal transceiver 102 is connected to the radio frequency front end module 103, and is configured to detect an incident signal and a reflected signal output by the radio frequency front end module 103 and output the detected incident signal and reflected signal. Preferably, the rf signal transceiver 102 is further configured to convert the rf signal received from the rf front-end module 103 into a baseband signal, and send the baseband signal to the baseband processing unit 101, and further configured to convert the baseband signal output by the baseband processing unit 101 into an rf signal.
And a baseband processing unit 101 connected to the rf signal transceiver 102, wherein the baseband processing unit 10 is configured to control the matching tuning chip 10. Preferably, the baseband processing unit 101 may be specifically configured to obtain parameters of the incident signal and the reflected signal, calculate an antenna impedance that varies due to the influence of the use environment in real time according to the parameters, and control the matching tuning chip 10 according to the antenna impedance.
Preferably, the baseband processing unit 101 is further configured to calculate a reflection coefficient (equal to a ratio of a voltage of the reflection signal to a voltage of the incident signal) in real time according to the amplitude and the phase of the incident signal and the reflection signal (which may be, for example, the incident signal and the reflection signal output by the rf front-end module), and control the matching tuning chip 10 accordingly to ensure an optimal impedance matching between the rf front-end module 103 and the antenna 11. The baseband processing unit 101 is also used for performing modulation, demodulation, encoding and decoding, and the like of communication signals (such as incident signals and reflected signals).
And the matching tuning chip 10 is connected with the antenna 11 and used for adjusting the radio frequency front-end module 103. Preferably, the matching tuning chip 10 is used to adjust the impedance matching between the rf front-end module 103 and the antenna 11.
The antenna 11 is used for receiving and transmitting frequency communication signals, such as receiving and transmitting frequency incident signals and reflected signals.
In the 5G terminal, three radio frequency Front Ends (FEMs) are provided according to the operating frequencies including a low frequency (frequency <1GHz), an intermediate frequency (frequency between 1GHz and 3 GHz), and a high frequency (frequency between 3GHz and 6 GHz), and therefore, preferably, the radio frequency front end module 103 may include at least one, the antenna includes at least one, each radio frequency front end module in the at least one radio frequency front end module is connected to one of the radio frequency signal transceiver, the first radio frequency switch, and the at least one matching tuning chip, and the baseband processing unit is further connected to the first radio frequency switch and the matching tuning chip.
Preferably, the at least one rf front-end module comprises a low frequency rf front-end module 104, an intermediate frequency rf front-end module 105 and a high frequency rf front-end module 106. The antenna 11 may include a low frequency antenna 114, an intermediate frequency antenna 115, and a high frequency antenna 116, respectively. The 5G terminal signal transceiving apparatus may further include a first radio frequency switch (e.g., a one-out-of-three radio frequency switch) 110. The at least one matching tuning chip 10 may be provided in three, which are the first matching tuning chip 1170, the second matching tuning chip 1171, and the third matching tuning chip 1172, respectively.
The low-frequency rf front-end module 104 is connected to the rf signal transceiver 102, the one-out-of-three rf switch 110, and the first matching tuning chip 1170, the intermediate-frequency rf front-end module 105 is connected to the rf signal transceiver 102, the one-out-of-three rf switch 110, and the second matching tuning chip 1171, and the high-frequency rf front-end module 106 is connected to the rf signal transceiver 102, the one-out-of-three rf switch 110, and the third matching tuning chip 1172.
The low-frequency antenna 114 is connected to the first matching tuning chip 1170, the intermediate-frequency antenna 115 is connected to the second matching tuning chip 1171, the high-frequency antenna 116 is connected to the third matching tuning chip 1172, and the baseband processing unit 101 is further connected to the one-out-of-three radio frequency switch 110, the first matching tuning chip 1170, the second matching tuning chip 1171, and the third matching tuning chip 1172.
Fig. 2 is a structural block diagram of the rf front-end module, and it should be noted here that the high-frequency rf front-end module 106, the intermediate-frequency rf front-end module 105, and the low-frequency rf front-end module 104 are different only in operating frequency bands of devices, and circuit architectures and structures of the modules are completely the same, and are all the circuit structures of fig. 2. As shown in fig. 2, each of the high-frequency rf front-end module 106, the intermediate-frequency rf front-end module 105, or the low-frequency rf front-end module 104 in the rf front-end module 20 may include an rf power amplifier 200, a duplexer group 201, a multi-way rf switch 202, a directional coupler 20, at least one rf switch (for example, including a second rf switch, such as a single-input multi-output rf switch 206, a third rf switch, such as a single-input multi-output rf switch 207, a fourth rf switch, such as an alternative rf switch 208), and preferably, the high-frequency rf front-end module 106, the intermediate-frequency rf front-end module 105, and the low-frequency rf front-end module 104 may further include: a first capacitor 222, a second capacitor 223, a third capacitor 220, a fourth capacitor 221, a first impedance 217, a second impedance 218, a third impedance 219, a fourth impedance 230. Preferably, the first capacitor 222, the second capacitor 223 and the third capacitor 220 may be electrically tunable variable capacitors, and the first impedance 217, the second impedance 218, the third impedance 219 and the fourth impedance 230 may be electrically tunable variable impedances.
The rf power amplifier 200 includes an Input terminal and an output terminal, the Input terminal is connected to the rf signal transceiver 102, and the output terminal is connected to the duplexer group 201, and is configured to perform power amplification on the communication signal.
The duplexer group 201 is connected with the multi-path radio frequency switch 202, and the duplexer group 201 comprises a plurality of duplexers with different frequency bands and is used for isolating a transmitting communication signal from a receiving incident communication signal so as to ensure that the receiving and the transmitting can work normally at the same time.
The multi-channel rf switch 202 is connected to the output terminal (i.e. the output terminal Out of the directional coupler 20) of the corresponding rf front-end module (e.g. the high-frequency rf front-end module 106, the intermediate-frequency rf front-end module 105, or the low-frequency rf front-end module 104).
Preferably, the output end of the radio frequency front end module is connected with a microstrip or strip radio frequency transmission line.
Preferably, the directional coupler 20 is a microstrip dual directional coupler, which can couple and output communication signals of different multiple frequency bands, and includes an isolation terminal 204, a coupling terminal 205 and an output terminal Out. In order to reduce the influence on the main radio frequency path and to be integrated into the radio frequency front-end module, the size of the directional coupler needs to be smaller than one tenth of the wavelength of the communication signal, the coupling degree is larger than 20dB, the operating bandwidth of the directional coupler is narrow, and the directivity is low.
Preferably, at least one radio frequency switch is connected with each other, one of the at least one radio frequency switch is grounded through a first capacitor and a first impedance, and is also grounded through a second capacitor and a second impedance, another of the at least one radio frequency switch is grounded through a third capacitor and a third impedance, and is also grounded through a fourth capacitor and a fourth impedance, specifically, the one-Out-of-two radio frequency switch 208 is connected with the through terminal 213 of the first one-in multi-Out radio frequency switch 206 and the through terminal 210 of the second one-in multi-Out radio frequency switch 207, the one-Out-of-two radio frequency switch 208 is also connected with the output terminal Out of the directional coupler 20, the output terminal Out of the directional coupler 20 is also connected with the one-Out-of-three radio frequency switch 110, and the first output terminal 214 of the first one-in multi-Out radio frequency switch 206 is grounded through the first capacitor 222 and the first impedance 217; the second output terminal 215 of the first single-input multiple-output rf switch 206 is grounded through a second capacitor 223 and a second impedance 218, the first single-input multiple-output rf switch 206 is further connected to the isolation terminal 204 of the directional coupler 20, the first output terminal 211 of the second single-input multiple-output rf switch 207 is grounded through a third capacitor 220 and a third impedance 219, the second output terminal 212 of the second single-input multiple-output rf switch 207 is grounded through a fourth capacitor 220 and a fourth impedance 219, and the second single-input multiple-output rf switch 207 is further connected to the coupling terminal 205 of the directional coupler 20. Because the radio frequency transceiver of the terminal such as the current mobile phone generally has only one power detection port, but the dual directional coupler needs to detect two signal parameters, such as power, of the coupling end and the isolation end, an alternative radio frequency switch 208 is needed to realize the detection of the two signals.
Taking the example that the intermediate frequency rf front-end module 105 supports two frequency bands, i.e., B40 and B41, the working principle of the 5G terminal signal transceiver is as follows:
in the terminal design stage, the directivity of the directional coupler 20 is calibrated first, when the directivity of the isolation end 204 of the directional coupler in the B40 frequency band is calibrated, the first single-input multiple-output rf switch 206 is set to be connected with the through end 213, the isolation end 204 of the directional coupler is connected to the one-of-two rf switch 208 through the through end 213 of the first single-input multiple-output rf switch 206, is output to the one-of-three rf switch 110 through the one-of-two rf switch 208, and is finally input to the rf signal transceiver 102 for detection; the second single-input multiple-output rf switch 207 is set to be connected to the output terminal 211 of the single-input multiple-output rf switch 207, the coupling terminal 205 of the directional coupler is connected to the third capacitor 220 and the third impedance 219 through the output terminal 211 of the second single-input multiple-output rf switch 207, the directivity of the isolation terminal 204 of the directional coupler 20 is made to meet the requirement in the B40 frequency band by adjusting the electrically tunable variable capacitor 220, and the value of the electrically tunable variable capacitor 220 is stored in the baseband processing unit 101.
When the directivity of the coupling end 205 of the directional coupler of the B40 frequency band is calibrated, the second single-input multiple-output rf switch 207 is set to be connected with the through end 210, the coupling end 205 is connected to the one-out-of-three rf switch 208 through the through end 210 of the single-input multiple-output rf switch 207, is output to the one-out-of-three rf switch 110 through the one-out-of-three rf switch 208, and is finally input to the rf signal transceiver 102 for detection; the first single-input multiple-output rf switch 206 is configured to be connected to the output terminal 214 of the first single-input multiple-output rf switch 206, the isolation terminal 204 of the directional coupler is connected to the electrically tunable variable capacitor 222 and the impedance 217 through the output terminal 214 of the single-input multiple-output rf switch 206, and by adjusting the electrically tunable variable capacitor 222, the directivity of the coupling terminal 205 of the directional coupler is made to meet the requirement in the B40 frequency band, and the value of the electrically tunable variable capacitor 222 is stored in the baseband processing unit 101.
It should be noted that the calibration procedure of the B41 frequency band is the same as that of the B40 frequency band, except that the output terminal 214 of the first single-input multiple-output rf switch 206 is connected to the output terminal 215 of the single-input multiple-output rf switch 206, and the output terminal 211 of the second single-input multiple-output rf switch 207 is connected to the output terminal 212 of the second single-input multiple-output rf switch 207.
When calibrating the amplitude and phase difference of the signals output by the isolation end 204 of the directional coupler and the coupling end 205 of the directional coupler, taking the B40 frequency band as an example, the incident communication signal is detected first, the isolation end 204 of the directional coupler 20 is connected to the electrically tunable variable capacitor 222 and the impedance 217 through the output end 214 of the first single-in multiple-out rf switch 206, and the output of the coupling end 205 of the directional coupler is input to the rf transceiver 102 through the through end 210 of the second single-in multiple-out rf switch 207, the one-out-of-two rf switch 208, and the one-out-of-three rf switch 110 for detection and output to the baseband processing unit 101.
Then, when detecting the reflected communication signal, the coupling end 205 of the directional coupler 20 is connected to the electrically tunable variable capacitor 220 and the impedance 219 through the output end 211 of the second single-input multiple-output rf switch 207, and the output of the isolation end 204 of the directional coupler 20 is input to the rf transceiver 102 through the through end 213 of the first single-input multiple-output rf switch 206, the one-Out-of-two rf switch 208, the output end Out of the directional coupler, and the one-Out-of-three rf switch 110 for detection, and is output to the baseband processing unit 101; the baseband processing unit 101 calculates and stores parameters such as the amplitude, phase difference, reflection coefficient, and the like of both (the incident communication signal and the reflected communication signal).
The incident communication signal and the reflected communication signal in the device can adopt a time-sharing detection method.
It should be noted that the directivity of the directional coupler is improved by the variable impedances (e.g., the first to fourth impedances) of the termination. And a plurality of groups of impedances are set for expanding the bandwidth of the directional coupler, the working frequency of the mobile terminal is discontinuous and is in a frequency division range, and the plurality of groups of impedances respectively correspond to different frequency ranges. If the performance consistency of the directional coupler is not good, the impedance can be calibrated on a terminal production line, and the calibration value is stored in the corresponding terminal; if the operating bandwidth of the directional coupler in a single frequency band is insufficient, the frequency band can be subdivided into several sub-bands, the impedance is calibrated for these sub-bands in a laboratory or in a terminal production line, and the calibration values are stored in the respective terminals. The terminal sets these values into the radio frequency front end module after the terminal is powered on. The utility model discloses a two directional coupler is one kind can the chip integration, wide band section, and high directionality, baseband processing unit can real-time computation antenna's impedance according to two directional coupler's output signal to according to this impedance control matching tuning chip, realize the best signal transmission between radio frequency front end module and the antenna, in order to reach the purpose of reinforcing terminal send-receive signal intensity.
When the terminal is in operation, the rf signal transceiver 102 detects an incident communication signal and a reflected communication signal output by an rf front-end module (e.g., the high-frequency rf front-end module 106, the intermediate-frequency rf front-end module 105, or the low-frequency rf front-end module 104), the baseband processing unit 101 may calibrate the amplitude and phase of the incident signal and the reflected signal by using a known impedance instead of an antenna, calibration values (e.g., the amplitude and phase of a reflection coefficient) are stored in the terminal (e.g., a mobile phone), in practical operation, the baseband processing unit 101 can detect and calculate the antenna impedance varying due to the influence of the use environment in real time by using the calibration value and the output signal of the directional coupler in the rf front-end module, and control the matching tuning chip according to the antenna impedance, the matching tuning chip adjusts the impedance matching between each radio frequency front end module and the corresponding antenna so as to realize the optimal transmission of signals between the radio frequency front end module and the antenna.
According to the above embodiment, the embodiment of the utility model provides a terminal is still disclosed, including the 5G terminal signal transceiver in the above-mentioned embodiment.
To sum up, the embodiment of the present invention provides a 5G terminal signal transceiver and a terminal, which output an incident signal and a reflected signal through a radio frequency front end module; the radio frequency signal transceiver detects an incident signal and a reflected signal output by the radio frequency front-end module and then outputs the incident signal and the reflected signal; the baseband processing unit controls the matching tuning chip; the matching tuning chip adjusts impedance matching between the radio frequency front end module and the antenna. Therefore, the communication signals are transmitted in the optimal state at any time and state of the terminal, the strength of the terminal for receiving and transmitting the signals is enhanced, and the user experience in the aspect of the terminal signals is improved.
The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the above embodiments, and although the present invention has been disclosed with the preferred embodiments, it is not limited to the present invention, and any skilled person in the art can make some modifications or equivalent changes without departing from the technical scope of the present invention.
Claims (14)
1. A5G terminal signal transceiver device, characterized in that, it includes: the radio frequency front-end module is connected with the matching tuning chip; the radio frequency signal transceiver is connected with the radio frequency front end module; the baseband processing unit is connected with the radio frequency signal transceiver; the matching tuning chip is connected with the antenna.
2. The 5G terminal signal transceiving device according to claim 1, wherein an output terminal of the RF front-end module is connected to a microstrip or strip RF transmission line.
3. The 5G terminal signal transceiver device according to claim 1, wherein the RF front-end module comprises at least one, the antenna comprises at least one, the 5G terminal signal transceiver device further comprises a first RF switch, the matched tuning chip comprises at least one, each RF front-end module of the at least one RF front-end module is connected to the RF signal transceiver, the first RF switch, and one of the at least one matched tuning chip, and the baseband processing unit is further connected to the first RF switch and the matched tuning chip.
4. The 5G terminal signal transceiver device according to claim 1, wherein the RF front-end module comprises a low-frequency RF front-end module, an intermediate-frequency RF front-end module and a high-frequency RF front-end module, the 5G terminal signal transceiver device further comprises a first RF switch, the at least one matching tuning chip comprises a first matching tuning chip, a second matching tuning chip and a third matching tuning chip, the low-frequency RF front-end module is connected to the RF signal transceiver, the first RF switch and the first matching tuning chip, the intermediate-frequency RF front-end module is connected to the RF signal transceiver, the first RF switch and the second matching tuning chip, and the high-frequency RF front-end module is connected to the RF signal transceiver, the first RF switch and the third matching tuning chip.
5. The 5G terminal signal transceiving device according to claim 4, wherein the antenna comprises a low frequency antenna, an intermediate frequency antenna and a high frequency antenna, the low frequency antenna is connected to the first matching tuning chip, the intermediate frequency antenna is connected to the second matching tuning chip, the high frequency antenna is connected to the third matching tuning chip, and the baseband processing unit is further connected to the first radio frequency switch, the first matching tuning chip, the second matching tuning chip and the third matching tuning chip.
6. The apparatus of claim 4, wherein the first RF switch is a one-out-of-three RF switch.
7. The apparatus as claimed in claim 4, wherein the low frequency is less than 1GHz, the intermediate frequency is between 1GHz and 3GHz, and the high frequency is between 3GHz and 6 GHz.
8. The 5G terminal signal transceiver device according to claim 4, wherein the high frequency RF front end module, the intermediate frequency RF front end module or the low frequency RF front end module each comprises an RF power amplifier, a duplexer group, a plurality of RF switches, a directional coupler, and at least one RF switch, the RF power amplifier comprises an input terminal and an output terminal, the input terminal of the RF power amplifier is connected to the RF signal transceiver, the output terminal of the RF power amplifier is connected to the duplexer group, the duplexer group is connected to the plurality of RF switches, the plurality of RF switches are connected to the output terminals of the corresponding RF front end modules, and the at least one RF switch is connected to each other.
9. The 5G terminal signal transceiver device according to claim 8, wherein the high-frequency rf front-end module, the intermediate-frequency rf front-end module, or the low-frequency rf front-end module further includes a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a first impedance, a second impedance, a third impedance, and a fourth impedance, the at least one rf switch includes a second rf switch, a third rf switch, and a fourth rf switch, the fourth rf switch is connected to a through terminal of the second rf switch and a through terminal of the third rf switch, the fourth rf switch is further connected to an output terminal of the directional coupler, an output terminal of the directional coupler is further connected to the first rf switch, and a first output terminal of the second rf switch is grounded through the first capacitor and the first impedance; the second output end of the second radio frequency switch is grounded through a second capacitor and a second impedance, the second radio frequency switch is also connected with the isolation end of the directional coupler, the first output end of the third radio frequency switch is grounded through a third capacitor and a third impedance, the second output end of the third radio frequency switch is grounded through a fourth capacitor and a fourth impedance, and the third radio frequency switch is also connected with the coupling end of the directional coupler.
10. The apparatus of claim 9, wherein the second and third RF switches are single-input multiple-output RF switches, and the fourth RF switch is an alternative RF switch.
11. The 5G terminal signal transceiving device according to claim 9, wherein the first capacitor, the second capacitor, and the third capacitor are electrically tunable variable capacitors, and the first impedance, the second impedance, the third impedance, and the fourth impedance are electrically tunable variable impedances.
12. The apparatus as claimed in claim 9, wherein the duplexer group includes a plurality of duplexers of different frequency bands.
13. The 5G terminal signal transceiving apparatus of claim 9, wherein the directional coupler is a microstrip dual directional coupler, the size of the microstrip dual directional coupler is smaller than one tenth of the wavelength of a communication signal, the coupling degree is greater than 20dB, and the communication signal is an incident signal or a reflected signal.
14. A terminal, characterized in that it comprises: the 5G terminal signal transceiving apparatus of any one of claims 1 to 13.
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| CN201921773467.4U CN210609159U (en) | 2019-10-18 | 2019-10-18 | 5G terminal signal transmitting and receiving device and terminal |
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| CN201921773467.4U CN210609159U (en) | 2019-10-18 | 2019-10-18 | 5G terminal signal transmitting and receiving device and terminal |
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| CN210609159U true CN210609159U (en) | 2020-05-22 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112637971A (en) * | 2020-12-03 | 2021-04-09 | 赛特斯信息科技股份有限公司 | Distributed 5G gNB base station based on coaxial distribution network and implementation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112637971A (en) * | 2020-12-03 | 2021-04-09 | 赛特斯信息科技股份有限公司 | Distributed 5G gNB base station based on coaxial distribution network and implementation method |
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