CN210607571U

CN210607571U - Lumped parameter nonreciprocal magnetic device based on dielectric plate interconnection structure

Info

Publication number: CN210607571U
Application number: CN201922167280.6U
Authority: CN
Inventors: 尹久红; 闫欢; 胡艺缤; 丁敬垒; 杨勤; 冯楠轩
Original assignee: SOUTHWEST INSTITUTE OF APPLIED MAGNETICS
Current assignee: SOUTHWEST INSTITUTE OF APPLIED MAGNETICS
Priority date: 2019-12-06
Filing date: 2019-12-06
Publication date: 2020-05-22
Anticipated expiration: 2029-12-06

Abstract

The utility model discloses a lumped parameter non-reciprocal magnetic device based on dielectric-slab interconnection structure, which belongs to the technical field of microwave ferrite devices and comprises a dielectric-slab interconnection unit, wherein the dielectric-slab interconnection unit comprises an upper circuit, a lower circuit and a metalized via hole, the upper circuit and the lower circuit form a junction through the metalized via hole, the position of the upper circuit close to the edge is provided with a metalized via hole, and the lumped parameter non-reciprocal magnetic device also comprises a ferrite substrate and a dielectric slab, and the ferrite substrate is positioned below the dielectric slab; the traditional woven belt central junction structure is replaced by the medium plate interconnection structure, the difficulty of process operation is greatly reduced, the distance between the processed central conductor and the end face of the ferrite is consistent, and the production efficiency and the consistency of products are improved; and preferably cancel traditional plastic envelope shell structure and the welding of plus electric capacity, with product integration machine-shaping, shorten assembly cycle, promoted production efficiency and reliability, reduced the cost of manufacture.

Description

Lumped parameter nonreciprocal magnetic device based on dielectric plate interconnection structure

Technical Field

The utility model relates to a microwave ferrite technical field especially relates to a lumped parameter nonreciprocal magnetic device based on dielectric plate interconnect structure.

Background

At present, the structure of a conventional lumped parameter non-reciprocal magnetic device is shown in fig. 1, and mainly comprises a central conductor woven belt assembly 1, a plastic package housing 2 with a metal bottom plate, a strontium permanent magnet 3, a capacitor 4, a lower iron bottom plate 5, an upper iron bottom plate 6 and other main parts. When the device is assembled and produced, the central conductor braided belt assembly 1 needs to be molded firstly, then the central conductor braided belt assembly 1 and the corresponding capacitor 4 are placed in the plastic package shell 2 with the metal bottom plate and are welded with the lower iron bottom plate 5, the strontium permanent magnet 3 and the upper iron bottom plate 6 are assembled together and then are assembled with the lower iron bottom plate 5, and finally the assembly of the product is finished.

The central conductor compiling band component forming of the traditional lumped parameter nonreciprocal device is generally divided into four steps:

the first step is as follows: by design calculation, the central conductor braid 1-1 is processed into a required plane shape by a precision processing technology such as etching and the like, as shown in fig. 2;

the second step is that: the ferrite substrate 1-2 is placed at the position of the circular ring of the central conductor braided strap 1-1, the first pin 1-11 of the central conductor braided strap is bent around the ferrite substrate 1-2, and in order to prevent the central conductors from being short-circuited, an insulating tape 1-3 is required to be attached to the upper part of the first pin of the central conductor braided strap, as shown in fig. 3.

The third step: similarly, the second pin 1-12 of the braided ribbon of the central conductor is bent around the ferrite substrate 1-2, and after the second pin 1-12 of the braided ribbon of the central conductor is bent, an insulating tape 1-3 needs to be attached to the upper part of the second pin 1-12 of the braided ribbon of the central conductor, as shown in fig. 4;

the fourth step: similarly, the third pin 1-13 of the braided ribbon of the central conductor is bent around the ferrite substrate 1-2, and after the bending, an insulating tape 1-3 needs to be attached to the upper part of the third pin 1-13 of the braided ribbon of the central conductor, as shown in fig. 5;

the central conductor of the traditional lumped parameter nonreciprocal device mainly has the following defects during programming and forming:

1. the positions of three pins of the braided strap of the central conductor are overlapped and staggered, and when a plane figure is designed, the sizes of the three pins are particularly critical, and the lengths can be accurately determined generally by overlapping three times or four times;

2. the three pins of the central conductor braided belt are different in length and need to be bent in sequence according to the length, so that misoperation is easily caused;

3. the product braided belt has small size and high operation difficulty, can be finished only by a special tool clamp, and has low production efficiency;

4. the product has higher requirement on the thickness of an insulating layer between the conducting belts, generally the thinner the product is, the better the product is, but the thinner the product is, the more difficult the processing is, and the higher the requirement on the adhesion of the insulating layer is;

5. the three pins are folded successively, the distances between the pins and the upper end face of the ferrite are different, and the consistency of three ports of the device is poor;

that is to say, in the assembly process of traditional product, because the thickness of center conductor braided strap is thin (generally about 0.02 ~ 0.05 mm), its accurate shaping has occupied more than 60% of whole production time, and final microwave performance of product is seriously influenced to shaping angle, position etc..

Disclosure of Invention

An object of the utility model is to provide a lumped parameter nonreciprocal magnetic device based on dielectric plate interconnect structure to solve above-mentioned problem.

In order to achieve the above purpose, the utility model adopts the technical scheme that: the utility model provides a lumped parameter non-reciprocal magnetic device based on dielectric-slab interconnect structure, includes dielectric-slab interconnection unit, dielectric-slab interconnection unit includes upper circuit, lower floor's circuit and metallization via hole, upper circuit and lower floor's circuit pass through metallization via hole forms a branch knot, the position that upper circuit is close to the border is provided with the metallization through-hole, the direct input/output port with the device of lower part circuit links to each other, still includes ferrite substrate and dielectric-slab, the dielectric-slab is PCB board or the ceramic plate that two-sided copper that covers, upper circuit, lower floor's circuit and dielectric-slab are a whole panel, the dielectric-slab links to each other with the input/output port and the resistance port of device, the ferrite substrate is located the dielectric-slab below.

The utility model discloses improve lumped parameter central conductor parcel region for dielectric slab interconnection structure, when improving the product precision, greatly improved production efficiency, it is high to have the precision, and the uniformity is good, characteristics such as efficient.

As a preferred technical scheme: the thickness of the dielectric plate is 0.04mm-0.254 mm. The thinner the dielectric plate, the better the performance, but the thinner the dielectric plate, the more difficult the processing, and finally determining the thickness by considering the performance and the processing difficulty through the discussion of practical and processing parties.

As a preferred technical scheme: the dielectric plate is a PCB plate or a ceramic plate, and the dielectric constant is 2.2-10. The structure is not sensitive to the dielectric constant of the dielectric plate, and a plurality of types of plates can be selected, so that the dielectric constant selection range is wide.

As a preferred technical scheme: the plastic package shell with the traditional structure can be completely replaced by the dielectric plate. As shown in fig. 7, the product is integrally processed and manufactured through the processes of PCB, LTCC, HTCC and the like, wherein the capacitor can be directly integrated by adopting the LTCC process, the secondary assembly operation of the subsequent capacitor is avoided, and the production efficiency is greatly increased.

Compared with the prior art, the utility model has the advantages of: the utility model discloses a medium-plate interconnection structure has replaced traditional establishment area center knot structure, and the medium-plate makes the shaping through present ripe PCB processing technology, with the input/output port of device, resistance port direct welding can, removed the complicated process of the braid three times establishment among the traditional handicraft, greatly reduced the degree of difficulty of technology operation, and the interval of the central conductor who processes out is unanimous with the ferrite terminal surface, improved the uniformity of production efficiency and product, production efficiency has improved more than 60%; and can also combine together the product with technologies such as PCB, LTCC, HTCC through dielectric-slab interconnect structure, cancel traditional plastic envelope shell structure, when the product adopted LTCC technology preparation, can also carry out the integration preparation with plus electric capacity, resistance and circuit, shorten assembly cycle, promoted production efficiency and reliability, production efficiency can promote about 80%, reduces the cost of manufacture about 30%.

Drawings

FIG. 1 is a schematic diagram of the composition of a conventional lumped parameter non-reciprocal magnetic element;

FIG. 2 is a view of a conventional flat developed braid of center conductors;

FIG. 3 is a schematic view of a first folding of a conventional braided ribbon of center conductors;

FIG. 4 is a schematic view of a second folding of a conventional braided ribbon of center conductors;

FIG. 5 is a schematic view of a third folding of a conventional braided ribbon of center conductors;

fig. 6 is a diagram illustrating the interconnection structure of the dielectric plates according to the present invention;

fig. 7 is a schematic view of the interconnection structure of the dielectric plate of the present invention;

fig. 8 is the S-curve diagram of lumped parameter non-reciprocal magnetic device based on dielectric slab interconnection structure of the present invention.

In the figure: 1. a central conductor braid assembly; 1-1, a central conductor braided belt; 1-11, a first pin; 1-12, a second pin; 1-13 third pin; 1-2, ferrite substrate; 1-3, insulating adhesive tape; 2. a housing; 3. strontium permanent magnetism; 4. a capacitor; 5. a lower iron bottom plate; 6. an upper iron bottom plate; 7. an upper layer circuit; 8. a lower layer circuit; 9. metallizing the through-hole; 10. metallizing the via hole; 11. a dielectric plate; 12. an input port; 13. a capacitive element; 14. a resistive port; 15. an output port; 16. a resistance element; A. and a dielectric board interconnection unit.

Detailed Description

The present invention will be further explained with reference to the accompanying drawings.

Example (b):

referring to fig. 6, a lumped parameter non-reciprocal magnetic device based on a dielectric slab interconnection structure includes a dielectric slab interconnection unit a, where the dielectric slab interconnection unit a includes:

1) the circuit comprises: the circuit comprises an upper circuit 7, a lower circuit 8, a metalized through hole 9 and a metalized through hole 10, wherein the upper circuit 7 and the lower circuit 8 form a branch junction through the metalized through hole 10, and the metalized through hole 9 is arranged at the position, close to the edge, of the upper circuit 7, so that the product is conveniently grounded; the lower circuit 8 is directly connected with an input/output port of the device, the circuit mainly has the function of signal transmission, and the phenomenon that three branch circuits are mutually interfered to form a short circuit can be effectively avoided in a mode of matching the upper circuit 7 and the lower circuit 8;

2) a medium plate: the dielectric plate with the thickness of 0.04-0.254 mm required by the interconnection structure can be a PCB (printed Circuit Board) or a ceramic plate, and the dielectric constant can be 2.2-10;

3) grounding hole: the central conductor of the product needs to be grounded, the edge of the upper circuit 7 is provided with metallized through holes 9, the upper circuit 7 is connected with the ground, and the number and the positions of the metallized through holes 9 can be selected according to actual conditions;

after the dielectric plate interconnection structure is manufactured, the formed product is as shown in fig. 7: the dielectric plate interconnection unit A is directly connected with an input port 12, an output port 15 and a resistance port 14 of a device, and further comprises ferrite substrates 1-2, a capacitor element 13, a resistor element 16 and a dielectric plate 11, wherein the ferrite substrates are positioned below the dielectric plate, and the dielectric plate 11 and the dielectric plate interconnection unit A can be processed and molded together and can directly replace a plastic package shell structure with a traditional structure.

As a more preferred example:

the dielectric plate interconnection structure can combine the product with the processes such as PCB, HTCC and the like, cancel the traditional plastic package shell structure, combine the product through the LTCC process, combine the unique ceramic manufacturing process of LTCC, and integrally process the capacitor, the resistor element and the circuit board which are required by the product, thereby reducing the workload of assembly in subsequent production and greatly improving the production efficiency of the product.

Through the emulation optimization, use the utility model discloses a lumped parameter isolator performance three-port uniformity that design scheme designed is better, and its typical S curve is shown in fig. 8, can know by fig. 8, through the utility model discloses an its input/output' S of isolator that medium plate interconnection structure produced return loss all more than 20dB, and the product isolation is also more than 20dB, and three curve uniformity are better, can satisfy the actual operation requirement of engineering completely.

The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims

1. A lumped parameter nonreciprocal magnetic device based on a dielectric slab interconnection structure is characterized in that: the multilayer ceramic dielectric board comprises a dielectric board interconnection unit, wherein the dielectric board interconnection unit comprises an upper circuit, a lower circuit and a metalized via hole, the upper circuit and the lower circuit are connected through the metalized via hole to form a junction, a metalized through hole is formed in the position, close to the edge, of the upper circuit, the lower circuit is directly connected with an input/output port of a device, the multilayer ceramic dielectric board further comprises a ferrite substrate and a dielectric board, the dielectric board is a PCB or ceramic board with double sides coated with copper, the upper circuit, the lower circuit and the dielectric board are integrated boards, the dielectric board is connected with the input/output port and a resistance port of the device, and the ferrite substrate is located below the dielectric board.

2. The lumped parameter non-reciprocal magnetic device based on dielectric slab interconnect structure as claimed in claim 1, wherein: the thickness of the dielectric plate is 0.04mm-0.254 mm.

3. The lumped parameter non-reciprocal magnetic device based on dielectric slab interconnect structure as claimed in claim 1, wherein: the dielectric constant of the dielectric plate is 2.2-10.

4. The lumped parameter non-reciprocal magnetic device based on dielectric slab interconnect structure as claimed in claim 1, wherein: the dielectric plate constitutes a housing.