CN210572139U - Ultrasonic high-voltage generation system - Google Patents
Ultrasonic high-voltage generation system Download PDFInfo
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- CN210572139U CN210572139U CN201921580715.3U CN201921580715U CN210572139U CN 210572139 U CN210572139 U CN 210572139U CN 201921580715 U CN201921580715 U CN 201921580715U CN 210572139 U CN210572139 U CN 210572139U
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Abstract
The embodiment of the utility model discloses ultrasonic wave high pressure generating system. The system comprises: a timer module configured to receive a first direct current voltage signal and generate a square wave signal based on a trigger of the first direct current voltage signal; the voltage-multiplying circuit boosting module is configured to perform voltage-multiplying rectification on the square wave signal and output a second direct-current voltage signal; and the pulse voltage boosting module is configured to provide a low-voltage first pulse voltage signal and boost the voltage of the first pulse voltage signal according to the voltage of the second direct-current voltage signal to obtain a high-amplitude and high-frequency second pulse voltage signal.
Description
Technical Field
The utility model relates to an ultrasonic wave field especially relates to an ultrasonic wave high pressure generating system.
Background
The penetration of ultrasonic waves to liquid and solid is large, and especially in the opaque solid of sunlight, the ultrasonic waves can penetrate the depth of dozens of meters. Ultrasonic waves hitting impurities or interfaces can generate significant reflection to form reflection echoes, and hitting moving objects can generate Doppler effect. Therefore, the ultrasonic detection is widely applied to the aspects of industry, national defense, biomedicine and the like.
In ultrasonic flaw detection, the higher the ultrasonic frequency, the better the directivity, and the higher the sensitivity, and the narrow beam is radiated into the medium, so that the position of the flaw is easily determined. The frequency range of the existing piezoelectric ultrasonic transducer for solid detection can reach 0.5-12.1 MHz, but the frequency of the current domestic and foreign ultrasonic generators can only reach hundreds of KHz at most, so that the requirement of ultrasonic flaw detection cannot be met.
Various noises inevitably exist in the detection process, if the amplitude of the signal is too small, the signal acquired on site cannot meet the data analysis requirement, and the measured error is relatively large, so that the signal-to-noise ratio is improved by a large amplitude to reduce the error. When the ultrasonic wave propagates in an actual medium, the amplitude of the ultrasonic wave gradually decreases with the increase of the distance.
In ultrasonic flow meters, the ultrasonic waves are influenced by the flowing medium, the measurement being carried out by passing the ultrasonic waves through the pipe, with the consequent occurrence of time differences, frequency changes and phase changes. The flow rate in the pipe can be measured by calculating the above change of the ultrasonic signal. If a thicker pipe is to be penetrated, a larger energy is required, i.e. a larger pulse voltage and a smaller pulse width are required, so that only increasing the pulse voltage of the ultrasonic generator ensures that the energy output finally is sufficiently large. The related art has proved that the influence of the wall thickness measured by using a frequency difference method on the measurement precision cannot be ignored in the ultrasonic flow measurement.
However, the ultrasonic wave amplitude of the ultrasonic wave generator at home and abroad is lower at present, and the requirement cannot be met.
SUMMERY OF THE UTILITY MODEL
In order to solve the above technical problem, an embodiment of the present invention is directed to providing an ultrasonic high voltage generating system; the components forming the system are low in cost, and meanwhile, the system is high in speed and efficiency and can output high-amplitude and high-frequency pulse voltage.
The technical scheme of the utility model is realized like this:
the embodiment of the utility model provides an ultrasonic wave high pressure generating system, this system includes:
a timer module configured to receive a first direct current voltage signal and generate a square wave signal based on a trigger of the first direct current voltage signal;
the voltage-multiplying circuit boosting module is configured to perform voltage-multiplying rectification on the square wave signal and output a second direct-current voltage signal; and
and the pulse voltage boosting module is configured to provide a low-voltage first pulse voltage signal and boost the voltage of the first pulse voltage signal according to the voltage of the second direct-current voltage signal to obtain a high-amplitude and high-frequency second pulse voltage signal.
The embodiment of the utility model provides an ultrasonic high-voltage generating system; the device can generate 1300V pulse high voltage, reduce relative error, generate larger energy, penetrate thicker measuring objects and reduce the influence of the pipe wall thickness on measurement in ultrasonic flow measurement, for example; the frequency of the obtained pulse voltage signal can reach 1MHz, and the method is suitable for more fields; the whole system has simple structure, high speed, high sensitivity, high efficiency and low heat emission.
Drawings
Fig. 1 is a schematic diagram of an overall design of an ultrasonic high-voltage generation system according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a timer module according to an embodiment of the present invention;
fig. 3A is a schematic diagram of a voltage-doubling circuit boost module according to an embodiment of the present invention;
fig. 3B is a schematic diagram of a sub-circuit of a voltage-doubler rectifier circuit according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a pulse voltage boosting module according to an embodiment of the present invention;
fig. 5 is an implementation effect diagram of an ultrasonic high-voltage generating system according to an embodiment of the present invention;
fig. 6 is a schematic diagram of an ultrasonic high voltage generation method according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1, an ultrasonic high voltage generation system 100 according to an embodiment of the present invention is shown, where the system 100 includes:
a timer module 110 configured to receive a first direct current voltage signal and generate a square wave signal based on a trigger of the first direct current voltage signal;
the voltage doubling circuit boosting module 120 is configured to perform voltage doubling rectification on the square wave signal and output a second direct current voltage signal; and
the pulse voltage boosting module 130 is configured to provide a low-voltage first pulse voltage signal and boost a voltage of the first pulse voltage signal according to a voltage of the second dc voltage signal, so as to obtain a high-amplitude and high-frequency second pulse voltage signal.
For the timer module 110, fig. 2 shows a schematic diagram of the timer module 110 according to an embodiment of the present invention.
As shown in fig. 2, the timer module 110 comprises a timer 111, preferably an SE555 timer, acting as a multivibrator, capable of fine timing, capable of generating precise rate time delays from microseconds to hours, said timer 111 automatically generating a square wave signal in a self-excited manner based on the triggering of said first direct voltage signal.
As shown in fig. 2, the timer module 110 further includes two external adjustable resistors R1 and R2 and two external adjustable capacitors C1 and C2 to control the free running frequency and duty cycle of the square wave signal.
As shown in fig. 2, the timer module 110 further comprises a transistor 112, preferably a type TIP122 transistor as shown in fig. 2, connected to an output terminal of the timer 111, wherein the transistor 112 is configured to amplify the power of the square wave signal.
Specifically, in the timer module 110 shown in fig. 2: the Vcc interface and the RST interface of the SE555 timer 111 are both connected with a 5V direct-current voltage input end; one end of the external adjustable resistor R1 is connected with a 5V direct-current voltage input end, and the other end is connected with a DIS interface of the timer 111; one end of the external adjustable resistor R2 is connected with the DIS interface of the timer 111, and the other end is connected with the THR interface of the timer 111; one end of the capacitor C1 is connected to the THR interface of the timer 111, and the other end is grounded; one end of the capacitor C2 is connected to the TRIG interface of the timer 111, and the other end is grounded; the THR interface of the timer 111 is connected with the TRIG interface; the GND interface of the timer 111 is grounded; one end of a capacitor C3 with the capacitance value of 0.01 muF is connected with the CTRL interface of the timer 111, and the other end is grounded; one end of a resistor R3 with the resistance value of 1K omega is connected with an OUT interface of the timer 111, and the other end is connected with a base electrode of a triode 112 with the model of TIP 122; the emitter of the transistor 112 is grounded; one end of the voltage doubling circuit boosting module 120 is connected to the base of the triode 112, and the other end is connected to the 5V dc voltage input end.
For the voltage-doubling circuit boost module 120, fig. 3A shows a schematic diagram of a voltage-doubling circuit boost module 120 provided by an embodiment of the present invention.
As shown in fig. 3A, the voltage-doubling circuit boosting module 120 includes a boosting transformer 121 and a voltage-doubling rectifying circuit 122, wherein the boosting transformer 121 boosts the square wave signal by a corresponding multiple and inputs the square wave signal to the voltage-doubling rectifying circuit 122. Preferably, the voltage ratio between the primary coil and the secondary coil of the step-up transformer 121 is 1: 10.
the voltage-doubling rectifying circuit 122 comprises a voltage-doubling rectifying circuit with multiple of N, which is composed of 2N capacitors and 2N diodes; the voltage-multiplying rectification circuit is composed of N stages of sub-circuits, and each stage of sub-circuit is as shown in FIG. 3B. As shown in fig. 3B, each stage of sub-circuit includes four connection terminals E1, E2, E3 and E4, the first capacitor Cf is connected between the first connection terminal E1 and the second connection terminal E2, the second capacitor Cs is connected between the third connection terminal E3 and the fourth connection terminal E4, the positive pole of the first diode Df is correspondingly connected to the third connection terminal E3, and the negative pole of the first diode Df is correspondingly connected to the positive pole of the second diode Ds; the positive electrode of the second capacitor Ds is correspondingly connected with the second connecting end E2, and the negative electrode of the second capacitor Ds is correspondingly connected with the fourth connecting end E4.
For an N-stage sub-circuit, the connections of the first stage sub-circuit are described as: the first connection terminal E1 is connected to the first terminal of the secondary coil of the transformer 121, the third connection terminal E3 is connected to the second terminal of the secondary coil of the transformer 121, the second connection terminal E2 is connected to the first connection terminal E1 of the next-stage sub-circuit, and the fourth connection terminal E4 is connected to the third connection terminal E3 of the next-stage sub-circuit. The connection of the final, i.e. nth, stage sub-circuit is described as: the first connection end E1 is connected to the second connection end E2 of the previous stage of sub-circuit, the third connection end E3 is connected to the fourth connection end E4 of the previous stage of sub-circuit, the second connection end E2 is not connected, and the fourth connection end E4 is connected to the pulse voltage boost module 130. The connection of the intermediate sub-circuit, i.e., the ith (where 1< i < N) stage sub-circuit, is described as: the first connection end E1 is connected with the second connection end E2 of the i-1 th-level sub-circuit, the second connection end E2 is connected with the first connection end E1 of the i +1 th-level sub-circuit, the third connection end E3 is connected with the fourth connection end E4 of the i-1 th-level sub-circuit, and the fourth connection end E4 is connected with the third connection end E3 of the i +1 th-level sub-circuit. Taking fig. 3A as an example, the voltage-doubler rectifier circuit 122 includes capacitors C4-C17 with a number of, for example, 14 and diodes D4-D17 with a number of, for example, 14 to form a voltage-doubler rectifier circuit with a multiple of 7, and is capable of outputting a high-voltage, low-current dc current; understandably, a small current can protect the entire system.
In a preferred embodiment of the present invention, the capacitor C4-C17 is a non-inductive capacitor with a withstand voltage of 1200V.
Specifically, in the voltage doubler boost module 120 shown in fig. 3A: the primary coil of the transformer 121 is connected with the timer module 110; a second terminal of the secondary coil of the transformer 121 is grounded; the voltage doubler rectification circuit 122 includes 7 stages of sub-circuits.
For the above-mentioned pulse voltage boost module 130, fig. 4 shows a schematic diagram of a pulse voltage boost module 130 provided by an embodiment of the present invention.
As shown in fig. 4, the pulse voltage boost module 130 includes a FET, a signal generator 131 and a diode bridge circuit 132, wherein a drain of the FET is connected to the output terminal of the voltage doubling circuit boost module 120 for receiving the second dc voltage signal, and the FET is preferably a high voltage resistant FET model 12N120K 5; the signal generator 131 is connected to the gate of the FET and is configured to input the low-voltage first pulse voltage signal to the gate of the FET, so that the FET and the signal generator 131 together form a voltage follower, and obtain the high-amplitude and high-frequency second pulse voltage signal; the diode bridge circuit 132 is connected to the voltage follower, can amplify power, and has the advantages of higher power, relatively higher output voltage, relatively smaller ripple voltage, and the like, and is used to limit the second pulse voltage signal from flowing back to the system 100, thereby protecting the system 100 from being damaged by reverse current. The voltage amplitude of the obtained high-amplitude and high-frequency second pulse voltage signal can reach 1300V, and the frequency can reach 1 MHz. The charging and discharging speed of the capacitor C18 in the pulse voltage boosting module 130 is high, reaches fifty nanoseconds and has high practical value.
Specifically, in the pulsed voltage boost module 130 shown in fig. 4: one end of the resistor R4 is connected with the voltage doubling circuit boosting module 120, and the other end is connected with the drain electrode of a high-voltage resistant field effect transistor FET with the model number of 12N120K 5; one end of the capacitor C18 is connected with the drain electrode of the FET, and the other end is connected with the corresponding end of the negative electrode of the diode D18; the cathode of the diode D18 is correspondingly connected with the anode corresponding end of the diode D19, and the anode is correspondingly connected with the anode corresponding end of the diode D20 in the diode bridge circuit 132; the gate of the FET is connected to the signal generator 131, and the source is grounded; one end of the resistor R5 is connected with the signal generator 131, and the other end is grounded; the anode corresponding end of the diode D19 is connected with the cathode corresponding end of the diode D18, and the cathode corresponding end is grounded; the resistor R5 and the ultrasonic sensor S form a parallel loop, one end of the parallel loop is grounded, and the other end of the parallel loop is connected with the anode corresponding end of the diode D20 in the diode bridge circuit 132; in the diode bridge circuit 132, the anode of the diode D20 is correspondingly connected with the cathode corresponding end of the diode D21, the anode of the diode D21 is correspondingly connected with the anode corresponding end of the diode D23, the cathode of the diode D23 is correspondingly connected with the anode corresponding end of the diode D22, and the cathode of the diode D22 is correspondingly connected with the cathode corresponding end of the diode D20; one end of the resistor R6 is connected with the corresponding end of the cathode of the diode D20, and the other end is grounded; one end of the resistor R7 is connected with the anode corresponding end of the diode D21, and the other end is an output end.
The ultrasonic high-voltage generation system has the advantages that the price of components of each module, such as the timer and the triode, is low, and therefore manufacturing cost can be saved.
Fig. 5 is an implementation effect diagram of the ultrasonic high voltage generation system provided by the embodiment of the present invention, wherein the obtained second pulse voltage signal amplitude of the high amplitude and the high frequency is 1300V (the amplitude displayed by the oscilloscope is attenuated by one thousand times through the high voltage probe). As shown in fig. 5, the output pulse voltage signal has a high off-speed and is close to an ideal waveform.
With respect to the above system, referring to fig. 6, it shows an ultrasonic high voltage generation method provided by an embodiment of the present invention, the method is applied to the ultrasonic high voltage generation system 100 described in the above embodiment, and the method includes:
s601: the timer module 110 generates a square wave signal based on the triggering of the first direct current voltage signal;
s602: the voltage doubling circuit boosting module 120 performs voltage doubling rectification on the square wave signal to obtain a second direct current voltage signal;
s603: the pulse voltage boosting module 130 provides a low-voltage first pulse voltage signal and boosts the voltage of the first pulse voltage signal according to the voltage of the second direct current voltage signal, so as to obtain a high-amplitude and high-frequency second pulse voltage signal.
With respect to the technical solution shown in fig. 6, in a possible implementation manner, the pulse voltage boost module 130 includes an effect transistor FET, a signal generator 131 and a diode bridge circuit 132, and accordingly, the pulse voltage boost module 130 provides a first pulse voltage signal with a low voltage and boosts a voltage of the first pulse voltage signal according to a voltage of the second dc voltage signal to obtain a second pulse voltage signal with a high amplitude and a high frequency, and for S603, the method may specifically include:
the drain electrode of the field effect transistor FET receives the second direct current voltage signal;
the signal generator 131 inputs the low-voltage first pulse voltage signal to the gate of the FET, so that the FET and the signal generator 131 together form a voltage follower, and the high-amplitude and high-frequency second pulse voltage signal is obtained;
the diode bridge circuit 132 limits the second pulse voltage signal from flowing back to the system 100.
It should be noted that: the embodiment of the utility model provides an between the technical scheme who records, under the condition of conflict, can make up wantonly.
The above description is only for the specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and all should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. An ultrasonic high voltage generating system, comprising:
a timer module configured to receive a first direct current voltage signal and generate a square wave signal based on a trigger of the first direct current voltage signal;
the voltage-multiplying circuit boosting module is configured to perform voltage-multiplying rectification on the square wave signal and output a second direct-current voltage signal; and
and the pulse voltage boosting module is configured to provide a low-voltage first pulse voltage signal and boost the voltage of the first pulse voltage signal according to the voltage of the second direct-current voltage signal to obtain a high-amplitude and high-frequency second pulse voltage signal.
2. An ultrasonic high voltage generating system according to claim 1, characterized in that the timer module comprises a timer functioning as a multivibrator, which automatically generates a square wave signal in a self-excited manner based on the triggering of the first direct voltage signal.
3. An ultrasonic high voltage generating system according to claim 2, characterized in that the timer module further comprises two external adjustable resistors and two external adjustable capacitors to control the free running frequency and the duty cycle of the square wave signal.
4. The ultrasonic high voltage generation system according to claim 2, wherein the timer module further comprises a transistor connected to an output of the timer, the transistor configured to amplify the power of the square wave signal.
5. The ultrasonic high-voltage generation system according to claim 1, wherein the voltage-doubling circuit boosting module comprises a boosting transformer and a voltage-doubling rectifying circuit, wherein the boosting transformer boosts the square wave signal by a corresponding multiple and inputs the square wave signal to the voltage-doubling rectifying circuit.
6. The ultrasonic high-voltage generation system according to claim 5, wherein the voltage-doubler rectification circuit comprises a voltage-doubler rectification circuit of multiple N composed of 2N capacitors and 2N diodes.
7. An ultrasonic high voltage generating system according to claim 6, characterized in that the capacitor is an noninductive capacitor.
8. The ultrasonic high voltage generation system according to claim 1, wherein the pulse voltage boost module comprises a field effect transistor, a signal generator, and a diode bridge circuit, wherein,
the drain electrode of the field effect transistor is connected with the output end of the voltage doubling circuit boosting module and used for receiving the second direct-current voltage signal;
the signal generator is connected with the grid electrode of the field effect transistor and used for inputting the low-voltage first pulse voltage signal to the grid electrode of the field effect transistor, so that the field effect transistor and the signal generator form a voltage follower to obtain the high-amplitude and high-frequency second pulse voltage signal;
and the diode bridge circuit is connected with the voltage follower and is used for limiting the second pulse voltage signal to flow back to the system.
9. An ultrasonic high voltage generating system according to claim 2, characterized in that the timer is a SE555 timer.
10. The ultrasonic high voltage generation system according to claim 8, wherein the fet is a fet model 12N120K 5.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110514747A (en) * | 2019-09-20 | 2019-11-29 | 西安石油大学 | A kind of ultrasonic high pressure generating system and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110514747A (en) * | 2019-09-20 | 2019-11-29 | 西安石油大学 | A kind of ultrasonic high pressure generating system and method |
| CN110514747B (en) * | 2019-09-20 | 2024-06-14 | 西安石油大学 | Ultrasonic high-voltage generation system and method |
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