CN210571725U - In-situ stretching device - Google Patents

In-situ stretching device Download PDF

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Publication number
CN210571725U
CN210571725U CN201920741214.2U CN201920741214U CN210571725U CN 210571725 U CN210571725 U CN 210571725U CN 201920741214 U CN201920741214 U CN 201920741214U CN 210571725 U CN210571725 U CN 210571725U
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stretching
sample
situ
stretching auxiliary
carrying side
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毛圣成
李志鹏
韩晓东
邓青松
沙学超
张剑飞
翟亚迪
李雪峤
马东锋
栗晓辰
张晴
马腾云
王立华
张泽
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Beijing University of Technology
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Beijing University of Technology
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Abstract

The utility model relates to the technical field of nano material mechanical property and microstructure in-situ characterization, and provides an in-situ stretching device, which comprises an MEMS mechanical chip, a first carrying side and a second carrying side, wherein the first carrying side and the second carrying side are arranged on the MEMS mechanical chip; the device also comprises a first stretching auxiliary part, a second stretching auxiliary part and a stretching sample; the first stretching auxiliary piece is connected with the first carrying side, and two ends of the stretching sample are respectively connected with the second stretching auxiliary piece and the second carrying side; the first stretching auxiliary part and the second stretching auxiliary part are nested to form a hook sleeve structure; the utility model has the advantages of simple structure and design benefit, the simple operation has realized directly carrying on tensile sample and being used for supplementary tensile colluding the cover structure on MEMS mechanics chip to carry out the tensile experiment operation of normal position to tensile sample, improved the success rate of TEM normal position tensile experiment and the accuracy of experimental result.

Description

In-situ stretching device
Technical Field
The utility model relates to a nano-material mechanical properties and microstructure normal position sign technical field especially relate to an normal position stretching device.
Background
The Transmission Electron Microscope (TEM) in-situ mechanical experiment refers to a research technology for applying single-field or multi-field coupled excitation such as force, heat, electricity, light and the like to a sample in a transmission electron microscope, observing and recording the dynamic evolution process of the structure and the performance of the same area on the sample in real time from the nanometer and atomic dimensions, and further disclosing the structure-performance relation of the material in a specific external field environment. The TEM in-situ mechanical experiment is continuously developed in the past decades, the application material range is gradually widened, the loading type is increased, the signal input and acquisition capacity is improved, and the outstanding research results are obtained. The cognition of the mechanical property and the plastic deformation mechanism of the structural material at different temperatures is an important experimental and theoretical basis for developing new materials.
The tensile test is one of the basic methods for testing the mechanical property of the material, can obtain the performance indexes including the elastic limit, the elongation, the elastic modulus, the yield strength and the like of the material, and can obtain the high-temperature performance of the material by combining a temperature field. The in-situ tensile experiment is carried out on the material in a Transmission Electron Microscope (TEM), so that the deformation mode and the evolution process of the structure/components of the material can be dynamically disclosed from a nanometer-sub-angstrom scale, the mechanism of the microstructure influencing the macroscopic mechanical property of the material can be intuitively recognized, and experimental basis and theoretical guidance are provided for the design of new materials.
At present, stretching devices for stretching materials in transmission electron microscopes are mainly classified into two categories:
the first type of stretching apparatus is a probe-type laboratory apparatus, such as the PI95 nanoindenter from bruker. The experimental instrument drives the probe to be close to the sample through a precise three-dimensional moving system and applies pressure. To achieve tensile loading, the probe tip (or sample front end) can be machined into a hook-and-loop structure, and the sample front end (or probe tip) can be machined into a hammer head structure. The sleeve is inserted into the hammer head by a three-dimensional moving system, and then the stretching is realized by reverse driving, such as the structure used by Kiener et al in Source simulation and Exhaustion, instruments from Quantitative in situ TEM Tensile Testing.
The second type of stretching device is a loading structure based on an MEMS (micro electro mechanical system) mechanical chip, and is divided into the following three types according to different driving modes: 1. a chip externally connected with a three-dimensional driving system, such as a Push-to-Pull chip for a probe-type experimental instrument developed by Hysitron corporation (patent number US 201313888959); 2. a chip externally connected with a miniature one-dimensional driving system, such as a Quantitative MEMS Mechanical chip developed in the Korean subject group for Quantitative in Mechanical in electronic ceramic driver, can realize TEM in-situ stretching when being externally connected with a miniature piezoelectric ceramic driver; 3. MEMS mechanical chip with built-In driving system includes electrothermal, electrostatic and piezoelectric driving, such as chips designed by Chang et al In A microelectronic system for thermal testing of nanostructures, chips designed by Garcia et al In-Situ Transmission Electron Microscope high temperature characteristics of the chip In Nanocrystalline Plastic Films, and the like. The chip realizes compression-tension conversion through a double-barb structure or directly realizes tension driving.
An experimental system applying the MEMS mechanical chip can integrate the mechanical sensor in the chip, thereby providing more direct and stable signal acquisition; meanwhile, the MEMS mechanical chip can strictly control the mechanical loading direction through structural design, and provides more strict uniaxial tension driving force and displacement; more importantly, the MEMS mechanical chip with a built-in stretching driving system or an external micro driving system is used for reducing the driving system to the millimeter size, so that the biaxial tilting of the TEM sample rod can be realized, the sample can be tilted to the optimal imaging condition, and the clearer structural evolution information can be obtained. Therefore, compared with the probe-type experimental instrument of the first type of stretching device, the loading structure based on the MEMS mechanical chip has obvious advantages and important application in-situ stretching research.
At present, samples in a TEM in-situ tensile experiment are all fixed on two sides of a mounting position of an MEMS mechanical chip, namely, a two-side constraint state, and the position of the MEMS mechanical chip for mounting the tensile sample is mostly located in a central area of the chip. Besides the peripheral frame, the MEMS mechanical chip contains complex functional areas formed by long and thin cantilever beams or clamped beams, and in design, the functional areas cannot be completely symmetrical, and the size error exists during preparation. Therefore, in the moving, clamping and bonding processes of the MEMS mechanical chip, the suspended functional area can generate vibration and deformation, and when the force-thermal coupling is loaded, the MEMS mechanical chip can also generate deformation due to thermal expansion of each part when the temperature rises.
Therefore, the factors causing the deformation of the MEMS mechanical chip can cause the relative movement of the two sides of the carrying position, so that the sample is pre-deformed and even broken, and the success rate and the effect of the experiment are affected. Kang et al, U.S. Pat. No. 4, 20140013854, 1, applied and method for in situ testing of microscopical and nanoscopic samples, have designed a T-beam structure at the end of the structure for carrying the sample on the MEMS mechanical chip, leaving a certain distance from the driving end to prevent pre-deformation of the sample. However, in the patent, the carrying position of the sample is far away from the T-shaped buffer area, two sides of the carrying position are respectively one end of two suspended beams, and the two beams are connected to the frame of the MEMS mechanical chip through a plurality of groups of clamped beams. When the sample clamp is used, the sample is still directly connected to two sides of the carrying position and is in a complete constraint state. As mentioned above, in the transferring, bonding and heating processes of the device, the clamped beam structures on the two sides vibrate and deform to drive the cross beam to move, so that the two sides of the carrying position generate relative displacement, and further the samples connected on the two sides deform in advance and even break.
Based on the above introduction, no effective solution for solving the pre-deformation of the sample has been found in the tensile experiment based on the transmission electron microscope.
Disclosure of Invention
Technical problem to be solved
The utility model aims at providing an in situ stretching device for solve present in the tensile experiment of projection electron microscope, because the deformation of MEMS mechanics chip leads to directly carrying on the tensile sample that carries on position both sides appearing predeformation fracture even, thereby influence the problem of experiment success rate and experimental result accuracy.
(II) technical scheme
In order to solve the technical problem, the utility model provides an in-situ stretching device, which comprises an MEMS mechanical chip, a first carrying side and a second carrying side, wherein the first carrying side and the second carrying side are arranged on the MEMS mechanical chip; the device also comprises a first stretching auxiliary part, a second stretching auxiliary part and a stretching sample;
the first stretching auxiliary piece is connected with the first carrying side, and two ends of the stretching sample are respectively connected with the second stretching auxiliary piece and the second carrying side;
the first stretching auxiliary part and the second stretching auxiliary part are nested to form a hook sleeve structure.
Preferably, in the utility model discloses in tensile sample is kept away from the one end of the tensile auxiliary member of second is equipped with connecting portion, connecting portion with the second carries on the side and connects.
Preferably, in the present invention, the second stretching auxiliary, the stretching sample, and the connecting portion are integrated members; the first stretching auxiliary member and the first carrying side, and the connecting portion and the second carrying side are connected through Pt deposition.
Preferably, in the present invention, the first stretching auxiliary member includes a C-shaped hook sleeve, and a limit opening is provided at an opening end of the C-shaped hook sleeve; the second stretching auxiliary part comprises a T-shaped structure formed by a longitudinal limiting rod and a transverse dowel bar; the limiting rod is arranged in the C-shaped hook sleeve, and the dowel bar penetrates through a limiting opening of the C-shaped hook sleeve, so that the C-shaped hook sleeve and the T-shaped structure are nested to form a hook sleeve structure.
Preferably, in the utility model discloses in the gag lever post with C shape collude between the inside wall of cover, and the dowel steel with it is gapped all to reserve between the spacing mouth, the upper surface of gag lever post with the difference in height that the upper surface of cover was colluded to C shape is less than the gag lever post or the thickness that the cover was colluded to C shape.
Preferably, in the utility model discloses in the open end that the cover was colluded in C shape is equipped with two towards the inboard relative arrangement's of opening edgewise, two the edgewise constitutes spacing mouthful.
Preferably, in the present invention, the tensile sample is a bar structure, and the surface of the tensile sample is arranged in an inclined manner with respect to the upper surface of the MEMS mechanical chip.
(III) technical effects
The utility model provides an in-situ stretching device carries on MEMS mechanics chip the original position and constitutes the first tensile auxiliary member and the tensile auxiliary member of second that collude the cover relation naturally to carry on the side through first and connect first tensile auxiliary member, and the tensile auxiliary member of second is connected the second with tensile sample and is carried on the side, when first side of carrying on and second carry on the side and take place relative motion, can realize the original position tensile experiment operation to the sample that prestretches, prestretch the material mechanics characteristic of sample through the transmission electron microscope research this moment.
According to the above, the utility model relates to an ingenious, the simple operation has realized directly preparing tensile sample on MEMS mechanics chip and has been used for supplementary tensile colluding the cover structure, has effectively prevented that tensile sample from taking place the problem of predeformation or damage because of the relative motion of carrying on the position before the experiment to the success rate of the tensile experiment of TEM normal position based on MEMS mechanics chip and the accuracy of experimental result have been improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an in-situ stretching device prepared in embodiment 1 of the present invention (not including a MEMS mechanical chip);
fig. 2 is a schematic structural diagram of cutting and thinning a pre-stretched sample at the MEMS mechanical chip 1 according to embodiment 1 of the present invention;
fig. 3 is a schematic structural diagram of an in-situ stretching device according to embodiment 1 of the present invention on an AD-SD displacement coordinate plane;
fig. 4 is a schematic structural diagram of an in-situ stretching device according to embodiment 1 of the present invention on an AD-ND displacement coordinate plane;
fig. 5 is a schematic structural view obtained in step S12 in the integral shearing mode adopted in embodiment 1 of the present invention;
fig. 6 is a schematic structural view obtained in step S13 in the integral shearing mode adopted in embodiment 1 of the present invention;
fig. 7 is a schematic structural view obtained in step S14 in the integral shearing mode adopted in embodiment 1 of the present invention;
fig. 8 is a schematic structural view obtained in step S15 in the integral shearing mode adopted in embodiment 1 of the present invention;
fig. 9 is a schematic structural view obtained in step S22 in the split shearing mode adopted in embodiment 1 of the present invention;
fig. 10 is a schematic structural view obtained in step S23 in the split shearing mode adopted in embodiment 1 of the present invention;
fig. 11 is a schematic structural view obtained in step S24 in the split shearing mode adopted in embodiment 1 of the present invention;
fig. 12 is a schematic structural view obtained in step S25 in the split shearing mode according to embodiment 1 of the present invention.
In the figure: 1-MEMS mechanical chip, 2-first carrying side, 3-second carrying side, 4-first stretching auxiliary piece, 5-second stretching auxiliary piece, 5 a-limiting rod, 5 b-dowel bar, 6-stretching sample, 7-MEMS mechanical chip frame, 8-pre-stretching sample, 9-limiting opening, 10-edge, 11-connecting part, 12-Pt deposition, 13-whole raw material plate, 14-C-shaped area, 15-first raw material block and 16-second raw material block.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the case of the example 1, the following examples are given,
the embodiment provides a preparation method of an in-situ stretching device, which comprises the following steps:
cutting the carried plate on the MEMS mechanical chip 1 to obtain a first stretching auxiliary part 4, a second stretching auxiliary part 5 and a pre-stretching sample 8;
thinning the pre-stretched sample 8 to prepare a stretched sample 6;
referring to fig. 1, the first stretching auxiliary member 4 is connected to the first mounting side 2 of the MEMS mechanical chip 1, two ends of the stretching sample 6 are respectively connected to the second stretching auxiliary member 5 and the connecting portion 11, and the other end of the connecting portion 11 is connected to the second mounting side 3 of the MEMS mechanical chip 1;
the first stretching auxiliary member 4 and the second stretching auxiliary member 5 are nested to form a hooking structure, and the first stretching auxiliary member 4 and the second stretching auxiliary member 5 can realize relative movement under the driving of the first carrying side 2 and/or the second carrying side 3, wherein the first carrying side 2 and the second carrying side 3 are both set as driving ends or one of the driving ends, and the other one is set as a fixed end.
In the above manufacturing method, the plate is directly mounted on the MEMS mechanical chip 1, and directly obtaining a first stretching auxiliary part 4 and a second stretching auxiliary part 5 which are embedded and sleeved with each other to form a hooking structure through cutting operation, and because the first stretching auxiliary member 4 is connected with the first carrying side 2, the second stretching auxiliary member 5 is connected with the stretching sample 6 obtained by cutting and thinning operation, the other end of the stretching sample 6 is connected with the connecting part 11, the other end of the connecting part 11 is connected with the second carrying side 3, a gap is left between the first stretching auxiliary member 4 and the second stretching auxiliary member 5, the sample can be prevented from deforming or being damaged due to the relative motion of the first carrying side 2 and the second carrying side 3 before the tensile experiment, the success rate of the transmission electron microscope in-situ tensile experiment based on the MEMS mechanical chip is effectively improved, and the accuracy of the detection result of the tensile experiment is ensured.
Further, the embodiment includes performing the cutting operation and the thinning operation by using a focused ion beam;
the cutting direction of cutting operation with the attenuate central direction of attenuate operation is the contained angle and arranges to all be inclined to MEMS mechanics chip 1's upper surface.
In general, when a focused ion beam is adopted to thin a plate material carried on an MEMS mechanical chip, the plate material needs to be thinned by deviating 0.5-2 degrees from the upper part and the lower part by taking an angle perpendicular to the incident direction of the focused ion beam in a subsequent transmission electron microscope experiment as a center; then cleaning by taking the same direction as the center and deviating 4-6 degrees from the upper part and the lower part; however, for the closed MEMS in-situ chip, after the block material or plate material to be tested is transferred to the mounting position by the block sampling method, the upper surface of the block material is generally parallel to or slightly lower than the upper surface of the MEMS mechanical chip, as shown in fig. 2. Under the condition, the thinning and cleaning angles can be shielded by the frame of the MEMS mechanical chip, so that the conventional thinning cannot be carried out.
However, in the present embodiment, both the cutting direction and the thinning center direction are designed to be inclined to the upper surface of the MEMS mechanical chip 1, so that even when the tensile sample 6 is located below the upper surface of the MEMS mechanical chip 1, the thinning operation on the tensile sample 6 can be achieved, and the cutting damage to the frame of the MEMS mechanical chip 1 caused by the focused ion beam is effectively prevented by using this method for thinning operation.
Further, in order to ensure that the cross section of the obtained tensile sample 6 after the shearing and thinning operations is rectangular, the cutting direction of the cutting operation and the thinning center direction of the thinning operation are designed to be perpendicular to each other in this embodiment.
Further, this embodiment further includes a cleaning operation performed on both surfaces of the tensile sample after the thinning operation to further ensure the processing accuracy of the tensile sample 6.
As can be seen from FIG. 2, the pre-stretched sample 8 is located below the surface of the MEMS mechanical chip 1. however, since the transmission electron microscope experiment is to observe the sample with electron beams, the direction of the electron beams (vertically downward) should be as close to the vertical relation with the observation surface as possible, the MEMS mechanical chip is horizontally placed in the transmission electron microscope during the experiment, i.e., the electron beams are perpendicular to the upper surface of the MEMS mechanical chip 1. therefore, in order to facilitate the observation of the change of the stretched sample through the transmission electron microscope, when the pre-stretched sample 8 is thinned, the angle of the thinning center direction deviating from the upper surface of the MEMS mechanical chip 1 is as small as possible within the allowable range, so that the upper and lower surfaces of the thinned stretched sample 6 are close to the vertical relation with the electron.
Assuming that K1 indicates the cutting direction of the cutting operation and K2 indicates the thinning center direction of the thinning operation in fig. 2, it is clear that K1 is perpendicular to K2 in this embodiment;
based on the cleaning of the two thinned surfaces of the tensile sample 6, the cleaning angle of the cleaning operation is set to be ± β from the thinning center direction, and as can be seen from fig. 2, S represents the minimum distance from the tensile sample 6 along the inside of the MEMS mechanical chip frame 7 in order to prevent the MEMS mechanical chip frame 7 from being cut along the thinning center direction.
according to the minimum distance S and the thickness T of the tensile sample 6, the limit thinning angle which can be carried out before the cleaning operation is carried out can be calculated and obtained to be arctan (T/S), at the moment, the cleaning angle β for the tensile sample 6 is considered, α must meet the constraint condition that α is larger than arctan (T/S) + beta, and the pre-stretching sample 8 can be thinned and the tensile sample 6 can be further cleaned on the premise that the MEMS mechanical chip frame 7 is not cut.
Further, in this embodiment, the first stretching auxiliary member 4 includes a C-shaped hook sleeve, wherein the hook sleeve surrounded by the C-shaped hook sleeve forms a rectangular structure; a limiting opening 9 is formed in the opening end of the C-shaped hook sleeve; the second stretching auxiliary part 5 comprises a T-shaped structure consisting of a longitudinal limiting rod 5a and a transverse dowel bar 5 b; the limiting rod 5a is arranged in the C-shaped hook sleeve, and the dowel bar 5b penetrates through a limiting opening 9 of the C-shaped hook sleeve. Through the design, the limiting rod 5a of the second stretching auxiliary part 5 is embedded into the hooking sleeve of the first stretching auxiliary part 4 to form a hooking sleeve structure, relative movement between the second stretching auxiliary part 5 and the first stretching auxiliary part 4 can be achieved within a certain distance range, and under the limitation of the limiting port 9 on the first stretching auxiliary part 4, the phenomenon that the limiting rod 5a on the second stretching auxiliary part 5 is separated from the first stretching auxiliary part 4 is effectively prevented.
Further, according to the instantaneous or fixed relative displacement generated by two carrying sides of the carrying position along each direction in the vibration, stress and heating processes of the MEMS mechanical chip 1, in this embodiment, gaps are reserved between the limiting rod 5a and the inner side wall of the C-shaped hook sleeve and between the dowel bar 5b and the limiting port 9, and the height difference between the upper surface of the limiting rod 5b and the upper surface of the C-shaped hook sleeve is smaller than the thickness of the limiting rod or the C-shaped hook sleeve, so that the first stretching auxiliary member 4 is prevented from contacting with the second stretching auxiliary member 5 before in-situ stretching.
Specifically, as shown in fig. 3 and 4, on the plane of the MEMS mechanical chip 1, the driving direction along the first mounting side 2 or the second mounting side 3 is set as an axial direction AD, the direction perpendicular to the axial direction AD is set as a lateral direction SD, and the normal direction of the MEMS mechanical chip 1 is set as ND, then the positive and negative relative displacements of the first mounting side 2 and the second mounting side 3 along the axial direction AD, the lateral direction SD, and the normal direction ND are respectively + x, -x, + y, -y, + z, and-z, the maximum driving displacement of the two mounting sides along the axial direction is-D, and the effective driving displacement applied to the sample is preset to be-D in the experiment; so that in order to avoid contact between the first stretching aid 4 and the second stretching aid 5 before in-situ stretching, the following dimensional relationships should be satisfied:
a>+x;
b>-x;
c > -y, and f > -y;
e > + y, and g > + y;
wherein, the front, rear, left and right inner side walls of the C-shaped hook sleeve form a rectangular structure; a represents the clearance between the front side wall of the limiting rod 5a and the front inner side wall of the C-shaped hook sleeve, and e and C represent the clearances between the left and right side walls of the limiting rod 5a and the left and right inner side walls of the C-shaped hook sleeve respectively; b represents a gap between the rear side wall of the limiting rod 5a and the rear inner side wall of the C-shaped hook sleeve, and f and g represent reserved gaps between the left side wall and the right side wall of the dowel bar 5b and the limiting port 9 respectively;
in order to avoid the first stretching aid 4 and the second stretching aid 5 from being staggered during stretching, it is necessary to satisfy:
h>i;
j>+z;
k>-z;
wherein h represents the length of the stopper rod 5a, i represents the width of the stopper opening 9, j represents the distance between the upper top surface of the stopper rod 5a and the lower bottom surface of the first stretching auxiliary 4, and k represents the distance between the lower bottom surface of the dowel bar 5b and the upper top surface of the first stretching auxiliary 4;
in order to ensure that both carrying sides provide a sufficiently effective driving displacement during the stretching of the stretched specimen 6, it should be satisfied:
-D>(+x)+b+(-d);
as can be seen from fig. 3, the above-mentioned dimensional constraint conditions can prevent the first stretching auxiliary member 4 and the second stretching auxiliary member 5 from contacting before the in-situ stretching.
Furthermore, in this embodiment, the open end of the C-shaped hook sleeve is provided with two edges 10 which are oppositely arranged towards the inner side, and the two edges form the limiting opening 9; as can be seen from fig. 3, the limiting opening 9 only allows the dowel bar 5b to pass through, and the two rims 10 can perform a good limiting function on the limiting bar 5a in the first stretching auxiliary member 4, so as to prevent the limiting bar 5a from being separated from the limiting opening 9.
Further, in this embodiment, a connection portion 11 is disposed at one end of the tensile sample 6 opposite to the second tensile auxiliary 5, and the second tensile auxiliary 5, the tensile sample 6 and the connection portion 11 are integrated, so that shearing processing of the second tensile auxiliary 5, the tensile sample 6 and the connection portion 11 is simultaneously achieved on the same pre-shearing component, and the connection portion 11 plays a good role in protecting the tensile sample 6; the first stretching auxiliary 4 and the first mounting side 2, and the connection portion 11 and the second mounting side 3 are connected by Pt deposition 12.
Further, this embodiment includes that the adoption integral shear construction mode or split type shear construction mode realize the buildding to normal position stretching device:
the integral shearing construction mode comprises the following steps:
s11, measuring the distance between the first mounting side 2 and the second mounting side 3 on the upper side of the MEMS mechanical chip 1, or cutting the distance between the first mounting side 2 and the second mounting side 3 to a predetermined size according to actual needs;
s12, mounting the whole raw material plate 13 of the adaptive size to be processed between the first mounting side 2 and the second mounting side 3, and connecting the two ends of the whole raw material plate 13 with the first mounting side 2 and the second mounting side 3 correspondingly into a whole through Pt deposition 12, see fig. 5;
s13, cutting a hollowed-out C-shaped region 14 on the left side of the one-piece raw material plate 13 along the cutting center direction to form a partial structure of the stopper rod 5a and the dowel 5b of the second stretching auxiliary 5, see fig. 6;
s14, thinning the area (sample area) of the entire raw material sheet 13 corresponding to the tensile sample along the thinning center direction to obtain a pre-stretched sample 8, see fig. 7;
and S15, cutting off redundant plate materials on two sides of the dowel bar 5b and the tensile sample 6 according to the structures of the preformed dowel bar 5b and the tensile sample 6, and reserving a connecting part 11 between the tensile sample 6 and the second carrying side, as shown in figure 8.
Through the operations of the above steps S11-S15, the in-situ stretching device of the present embodiment is constructed, and the first stretching auxiliary member and the second stretching auxiliary member form a natural hooking relationship.
In addition, the split type shearing construction mode specifically comprises the following steps:
s21, measuring the distance between the first mounting side 2 and the second mounting side 3 on the upper side of the MEMS mechanical chip 1, or cutting the distance between the first mounting side 2 and the second mounting side 3 to a predetermined size according to actual needs;
s22, mounting a first raw material block 15 with proper size on the first mounting side 2, wherein the first raw material block 15 is a blank of a first stretching auxiliary member, connecting the first raw material block 15 and the first mounting side 2 into a whole by Pt deposition 12, and cutting the first stretching auxiliary member 4 on the first raw material block 15 along the cutting center direction by using a focused ion beam, see fig. 9;
s23, mounting a second raw material block 16 with a suitable size on the second mounting side 3, wherein one end of the second raw material block 16 opposite to the mounting side is a second stretching auxiliary member 5, connecting the second raw material block 16 and the second mounting side 5 into a whole through Pt deposition 12, and ensuring that a limiting rod 5a of the second stretching auxiliary member on the second raw material block 16 just extends into a hook sleeve of the first stretching auxiliary member 4, see fig. 10;
s24, thinning the area (sample area) of the second raw material block 16 corresponding to the tensile sample 6 along the thinning center direction to obtain a pre-stretched sample 8, see fig. 11;
s25, cutting off the excess panel veneer on both sides of the tensile sample 6 along the cutting center direction, and reserving the connection part 11 between the tensile sample 6 and the second mounting side, see fig. 12.
Through the operations of the above steps S21-S25, the in-situ stretching device of the present embodiment is constructed, and the first stretching auxiliary member and the second stretching auxiliary member form a natural hooking relationship.
However, the integral shearing construction mode and the split shearing construction mode have the advantages and the disadvantages respectively, and the comparison shows that:
the size of a sample block (a whole raw material plate) to be detected, which needs to be extracted in integral shearing construction, is larger, so that the workload of focusing ion beams for extracting the sample block to be detected is larger, but the subsequent processing is simpler.
However, the sample blocks to be measured (the first raw material block and the second raw material block) to be extracted in the split type shearing construction are small in size, but before the second raw material block is transferred, the second stretching auxiliary piece needs to be cut out, and before the second raw material block is bonded, the second stretching auxiliary piece on the second raw material block needs to be moved to a position where the second stretching auxiliary piece is in a proper position relation with the first stretching auxiliary piece, so that the requirement on the moving precision is high.
In the case of the example 2, the following examples are given,
referring to fig. 1, the present embodiment is based on the preparation method described in embodiment 1, and specifically provides an in-situ stretching apparatus, including a MEMS mechanical chip 1, and a first mounting side 2 and a second mounting side 3 disposed on an upper side of the MEMS mechanical chip 1, and further including a first stretching auxiliary member 4, a second stretching auxiliary member 5, and a stretching sample 6 described in embodiment 1, where the first stretching auxiliary member 4 is connected to the first mounting side 2 of the MEMS mechanical chip 1, two ends of the stretching sample 6 are respectively connected to the second stretching auxiliary member 5 and a connection portion 11, and the other end of the connection portion is connected to the second mounting side 3 of the MEMS mechanical chip 1; the first stretching auxiliary part 4 and the second stretching auxiliary part 5 are embedded and sleeved to form a hooking structure.
The in-situ stretching device realizes the in-situ carrying of the first stretching auxiliary part 4 and the second stretching auxiliary part 5 which form a natural hooking relation on the MEMS mechanical chip 1, and the first stretching auxiliary part 4 is connected on the first carrying side 2, the second stretching auxiliary part 5 and the stretching sample 6 which is integrally cut and formed with the second stretching auxiliary part are indirectly connected on the second carrying side 3 through the connecting part 11, when the first carrying side 2 and the second carrying side 3 are axially separated from each other until the limiting rod 5a is contacted with the edge 10, and the stretching driving is transmitted to the stretching sample 6 through the force transmission rod 5b, the in-situ stretching experiment operation of the stretching sample 6 can be realized, the mechanical characteristics of the stretching sample 6 are researched through a transmission electron microscope, and because the first stretching auxiliary part 4 and the second stretching auxiliary part 5 reserve enough gaps in all adjacent directions, the deformation and even damage of the stretching sample 6 caused by the relative movement of two sides of the carrying positions before the stretching experiment are effectively prevented Therefore, the success rate of the tensile test and the accuracy of the detection result are improved.
The above-described embodiments of the apparatus are merely illustrative, and the units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.

Claims (7)

1. An in-situ stretching device comprises an MEMS mechanical chip, a first carrying side and a second carrying side which are arranged on the MEMS mechanical chip, and is characterized in that,
the device also comprises a first stretching auxiliary part, a second stretching auxiliary part and a stretching sample;
the first stretching auxiliary piece is connected with the first carrying side, and two ends of the stretching sample are respectively connected with the second stretching auxiliary piece and the second carrying side;
the first stretching auxiliary part and the second stretching auxiliary part are nested to form a hook sleeve structure.
2. The in-situ stretching device according to claim 1, wherein a connecting portion is provided at an end of the stretched sample away from the second stretching auxiliary, and the connecting portion is connected to the second carrying side.
3. The in situ stretching apparatus of claim 2, wherein the second stretching aid, the stretching sample and the connecting portion are provided as an integral member; the first stretching auxiliary member and the first carrying side, and the connecting portion and the second carrying side are connected through Pt deposition.
4. The in-situ stretching device as claimed in any one of claims 1 to 3, wherein the first stretching auxiliary member comprises a C-shaped hooking sleeve, and a limiting opening is arranged at an opening end of the C-shaped hooking sleeve; the second stretching auxiliary part comprises a T-shaped structure formed by a longitudinal limiting rod and a transverse dowel bar; the limiting rod is arranged in the C-shaped hook sleeve, and the dowel bar penetrates through a limiting opening of the C-shaped hook sleeve, so that the C-shaped hook sleeve and the T-shaped structure are nested to form a hook sleeve structure.
5. The in-situ stretching device as claimed in claim 4, wherein gaps are reserved between the limiting rod and the inner side wall of the C-shaped hooking sleeve and between the dowel bar and the limiting opening, and the height difference between the upper surface of the limiting rod and the upper surface of the C-shaped hooking sleeve is smaller than the thickness of the limiting rod or the C-shaped hooking sleeve.
6. The in-situ stretching device as claimed in claim 5, wherein the open end of the C-shaped hooking sleeve is provided with two rims oppositely arranged towards the inner side of the opening, and the two rims form the limiting opening.
7. The in-situ stretching device of any one of claims 1 to 3, wherein the stretching sample has a strip structure, and a surface of the stretching sample is arranged obliquely with respect to an upper surface of the MEMS mechanical chip.
CN201920741214.2U 2019-05-22 2019-05-22 In-situ stretching device Active CN210571725U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110261221A (en) * 2019-05-22 2019-09-20 北京工业大学 A kind of in-situ stretching device and preparation method thereof
CN114813383A (en) * 2022-05-20 2022-07-29 清华大学 In-situ stretching device and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110261221A (en) * 2019-05-22 2019-09-20 北京工业大学 A kind of in-situ stretching device and preparation method thereof
CN110261221B (en) * 2019-05-22 2023-12-29 北京工业大学 In-situ stretching device and preparation method thereof
CN114813383A (en) * 2022-05-20 2022-07-29 清华大学 In-situ stretching device and manufacturing method thereof

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