CN210535657U - IGBT module packaging structure - Google Patents
IGBT module packaging structure Download PDFInfo
- Publication number
- CN210535657U CN210535657U CN201921868366.5U CN201921868366U CN210535657U CN 210535657 U CN210535657 U CN 210535657U CN 201921868366 U CN201921868366 U CN 201921868366U CN 210535657 U CN210535657 U CN 210535657U
- Authority
- CN
- China
- Prior art keywords
- temperature
- igbt module
- igbt
- sensing element
- package structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model provides a IGBT module packaging structure, include: the electrical connection layer is used for providing an electrical connection medium for the conductor element and the external element arranged on the electrical connection layer; the chip layer is fixedly arranged on the electric connection layer; a terminal; and conductive lines for implementing circuit interconnections; the chip layer and the terminal are electrically connected through the wire by the electric connection layer, namely, the wire connected between the chip layer and the terminal is partially connected with the electric connection layer, and compared with the connection mode that the chip layer and the terminal are directly electrically connected through the wire, the heat generated by the chip layer can be at least partially conducted to the insulating substrate through the region in contact with the wire and the electric connection layer, so that the heat conducted to the terminal by the wire is reduced, the temperature of the terminal is reduced, the normal work of the IGBT module is facilitated, the possibility of damage of the IGBT module due to overheating is reduced, the service life of the IGBT module is prolonged, and the technical problem that the IGBT module is possibly damaged due to overheating due to the fact that the heat at the terminal is difficult to radiate is solved.
Description
Technical Field
The utility model relates to a semiconductor power device encapsulates technical field, more specifically says, the utility model relates to a IGBT module packaging structure.
Background
An insulated Gate Bipolar transistor (igbt) is a composite fully-controlled voltage-driven power semiconductor device composed of a BJT (Bipolar transistor) and a MOS (insulated Gate field effect transistor), and has been widely used in various electronic devices as a common electronic device. Because the performance of the IGBT module is affected by over-high Temperature, and even the IGBT module is damaged in severe cases, a Temperature sensing element is usually disposed in the IGBT module, and in the prior art, an ntc (negative Temperature coefficient) Temperature sensor is usually mounted in the IGBT module to detect the Temperature T of the IGBT module housingCOr integrating the temperature sensitive diode on the IGBT chip to directly detect the junction temperature T of the IGBT chipjBecause the NTC temperature sensor has a slow temperature response speed, when the IGBT chip is instantaneously overheated, the NTC temperature sensor may have a situation of untimely response and cause a user to find a problem in time, and may cause damage to the IGBT module in a severe case, and the temperature sensitive diode is easily subjected to thermal breakdown when the temperature suddenly rises, and the reliability is poor.
Therefore, there is a need for an improved IGBT module package structure.
SUMMERY OF THE UTILITY MODEL
In view of prior art, the relatively slow or relatively poor problem of stability of temperature sensing element self appears in temperature sensing element response easily when IGBT chip temperature detects in IGBT module packaging structure, the utility model provides an IGBT module packaging structure, include: an insulating substrate; the IGBT chip is arranged on one side of the insulating substrate; and the temperature sensing element is attached to one side of the insulating substrate, which is different from the IGBT chip, and is arranged opposite to the IGBT chip by the insulating substrate.
In the technical scheme, the temperature sensing element is attached to one side of the insulating substrate, which is different from the IGBT chip, and is arranged opposite to the IGBT chip through the insulating substrate, so that the temperature of the shell of the IGBT chip can be timely transmitted to the temperature sensing element, and the temperature sensing element can rapidly make corresponding response when the temperature of the IGBT chip changes.
The utility model discloses an among the preferred technical scheme, IGBT module packaging structure still includes: and the temperature detection terminal is connected with the temperature sensing element.
In the technical scheme, a user does not need to directly acquire the shell temperature T of the IGBT chip through the temperature sensing elementCAnd the shell temperature T of the IGBT chip can be indirectly acquired through the signal transmitted to the temperature detection terminal by the temperature sensing elementC。
The utility model discloses an among the preferred technical scheme, the temperature detection terminal at least part set up in insulating substrate is outside.
In the technical scheme, the temperature detection terminal is at least partially arranged outside the insulating substrate, so that convenience is provided for a user to directly or indirectly acquire the temperature signal transmitted by the temperature sensing element from the temperature detection terminal.
The utility model discloses an among the preferred technical scheme, insulating substrate is the DBC board, including ceramic substrate and cladding in the copper foil of ceramic substrate upper and lower surface.
In the preferred embodiment of the present invention, the temperature detecting terminal and the temperature sensing element are formed by copper foil electrically connected to the circuit layer of the ceramic substrate.
Because the temperature detection terminal and the temperature sensing element are connected through the wire, and the wire groove needs to be correspondingly formed in the metal substrate, the process is complex, the cost is high, the packaging efficiency of the IGBT module is reduced, the electric connection between the temperature detection terminal and the temperature sensing element is realized by utilizing the circuit layer formed by the copper foil, the wire and the wire groove do not need to be arranged, the process is simplified, and the stability of the IGBT module is improved.
In the preferred embodiment of the present invention, the temperature sensing element is an insulated thermocouple.
The use of a thermocouple as a temperature sensing element has the following advantages, firstly, the measurement accuracy of the thermocouple is high: the mode of operation of thermocouple can be directly with the material contact of measurand, so can be more direct sense the temperature of reaching the thermocouple, so measure the temperature more accurate the utility model discloses in, insulating thermocouple and insulating substrate direct contact to measure the shell temperature T rather than the corresponding IGBT chip in positionC；
Secondly, the measuring range of the thermocouple is larger, the thermocouples are of different types, some thermocouples are high-temperature resistant and can measure the temperature even exceeding 2800 ℃, some thermocouples are also strong in low-temperature resistance due to special materials and can measure the temperature of 269 ℃ below zero, an IGBT chip usually has problems caused by overheating, and the safety of the thermocouples is higher than that of a temperature sensitive diode and an NTC temperature sensor when the temperature rises suddenly;
finally, the thermocouple is relatively stable, and because the thermocouple is usually made of a metal material with good conductivity and high stability, the thermocouple is also relatively good in stability, and can better measure stable temperature.
The utility model discloses an among the preferred technical scheme, IGBT module packaging structure still includes, metal substrate for constitute IGBT module packaging structure's bottom plate, metal substrate is close to one side of IGBT chip is provided with and is used for acceping temperature sensing element's recess.
In the technical scheme, the grooves are convenient to package the IGBT modules, and the temperature sensing elements can be accommodated in the grooves, so that the temperature sensing elements do not occupy the inner space of the IGBT modules, and the miniaturization design requirement of the IGBT modules can be met.
The utility model discloses an among the preferred technical scheme, the degree of depth of recess sets up to 0.6 ~ 0.8 millimeter, and the width sets up to 1.0 ~ 1.2 millimeter.
The utility model discloses an among the preferred technical scheme, insulating thermocouple have the work end that is used for the direct detection IGBT chip's shell temperature and be used for to the free end of temperature detect terminal transmission thermoelectromotive force information.
The utility model discloses an among the preferred technical scheme, the free end with by wire electric connection between the temperature detection terminal.
In the preferred technical solution of the present invention, the metal substrate is further provided with a wire groove for accommodating the wire therein.
In the technical scheme, the lead groove is convenient for packaging the IGBT module, the lead can be accommodated in the lead groove, the lead does not occupy the inner space of the IGBT module, the design requirement for miniaturization of the IGBT module can be met, and in addition, the lead is accommodated in the lead groove equivalently, so that the lead is protected, and the damage of the lead can be effectively avoided.
Drawings
Fig. 1 is a schematic structural diagram of an IGBT module packaging structure in a preferred embodiment of the present invention;
fig. 2 is a schematic structural diagram of the IGBT module package structure in fig. 1 when the temperature detection terminal and the temperature sensing element are electrically connected through the circuit layer.
Description of the drawings: 1-insulating substrate, 11-ceramic substrate, 12-copper foil; 2-IGBT chip; 3-FWD chip; 4-temperature sensing element, 41-working end, 42-free end; 5-metal substrate, 51-groove; 6-temperature detection terminal; 7-a wire; 8-wire groove.
Specific technical scheme
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these technical solutions are only used for explaining the technical principles of the present invention, and are not intended to limit the scope of the present invention. And can be modified as needed by those skilled in the art to suit particular applications.
It should be noted that in the description of the preferred embodiments of the present invention, the terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", and the like, which indicate directions or positional relationships, are based on the directions or positional relationships shown in the drawings, which are for convenience of description only, and do not indicate or imply that the devices or components must have specific orientations, be constructed and operated in specific orientations, and therefore, should not be construed as limiting the present invention.
In the prior art, an element for detecting the temperature of the IGBT chip 2 is usually disposed inside the package structure of the IGBT module, for example, an NTC temperature sensor or a temperature sensitive diode is used, and the IGBT module may be heated up instantaneously due to a sudden change of current in the actual use process, at this time, not only a certain response speed of the temperature detection element is required, but also a certain tolerance to temperature is required, so that the real-time change of the temperature of the IGBT chip 2 can be reflected in time, and the damage of the temperature detection element body due to the sudden change of temperature is not caused, for the above purpose, the present embodiment firstly provides the package structure of the IGBT module shown in fig. 1, which mainly includes: the IGBT device comprises an insulating substrate 1, an IGBT chip 2, an FWD chip 3, a temperature sensing element 4 and a metal substrate 5; wherein, IGBT chip 2 sets up in one side of insulating substrate 1, and temperature sensing element 4 attaches in insulating substrate 1 and is different from one side of IGBT chip 2 and separates insulating substrate 1 and IGBT chip 2 relative setting, promptly, temperature sensing element 4 separates insulating substrate 1 and IGBT chip 2 corresponding position in order to be used for detecting the shell temperature T of IGBT chip 2CThe metal substrate 5 is disposed on a side of the insulating substrate 1 different from the IGBT chip 2, and is used to form a housing (not shown) of the IGBT module together with a case (not shown) of the IGBT module according to a formula
The junction temperature T of the IGBT chip can be calculatedjWherein R isthP is a heat loss value of the IGBT chip, and is a thermal resistance (hereinafter referred to as junction-to-case thermal resistance) between the temperature sensing element and the IGBT chip, and specifically, a case temperature T of the IGBT chip 2 is obtainedCThen, simulation software in the simulation module, such as power consumption simulation software IPOSIM and thermal simulation software Flo can be utilizedtherm generation and temperature TCCorresponding heat loss value P, junction-to-case thermal resistance R of IGBT chip 2thIt can be obtained by querying the corresponding specification, and accordingly, the only unknown quantity in the above formula, that is, the junction temperature T of the IGBT chip 2 can be calculatedj。
In the present embodiment, the temperature sensing element 4 is attached to the side of the insulating substrate 1 different from the IGBT chip 2 and is disposed opposite to the IGBT chip 2 with the insulating substrate 1 interposed therebetween, so that the temperature of the case of the IGBT chip 2 can be timely transmitted to the temperature sensing element 4, and the temperature sensing element 4 can quickly respond to a change in the temperature of the IGBT chip 2.
FWDs, i.e., freewheeling diodes, are commonly used in circuits to protect components from breakdown or burning due to induced voltages, is connected to two ends of the element generating the induced electromotive force in parallel and forms a loop with the element, so that the generated high electromotive force is consumed in the loop in a continuous current mode, thereby playing the role of protecting the element in the circuit from being damaged, in the present embodiment, the FWD chip 3 is connected to the IGBT chip 2 to function as a protection for the IGBT chip 2, and in the present embodiment, an example is given in which the temperature sensing element 4 is provided to detect the temperature of the IGBT chip 2, according to this example, as is readily apparent to those skilled in the art, the user can also dispose the temperature sensing element 4 at a position corresponding to the FWD chip 3 via the insulating substrate 1, with the temperature that detects FWD chip 3, above embodiment is all in the utility model discloses a protection scope.
In the preferred embodiment, since copper has good thermal conductivity and stability, the metal substrate 5 may be a copper substrate, a groove 51 corresponding to the position of the IGBT chip 2 is provided on the side of the copper substrate facing the insulating substrate 1, and the size of the groove 51 corresponds to the size of the temperature sensing element 4 so as to accommodate the temperature sensing element 4 when the IGBT module package structure is packaged.
In the technical scheme, the arrangement of the groove 51 provides convenience for packaging the IGBT module, and the temperature sensing element 4 can be accommodated in the groove 51, so that the temperature sensing element 4 does not occupy the inner space of the IGBT module, and the design requirement for miniaturization of the IGBT module can be met.
In a preferred technical solution of this embodiment, the IGBT module package structure further includes: a temperature detection terminal 6 connected with the temperature sensing element 4, so that a user does not need to directly obtain the shell temperature T of the IGBT chip 2 through the temperature sensing element 4CAnd the shell temperature T of the IGBT chip 2 can be indirectly acquired through the signal transmitted to the temperature detection terminal 6 by the temperature sensing element 4CIn the present embodiment, the connection mode between the temperature detection terminal 6 and the temperature sensing element 4 may be electrical connection, or may be another connection mode, such as communication connection, selected according to the type of the temperature sensing element 4.
When the connection relationship between the temperature detection terminal 6 and the temperature sensing element 4 is electrical connection, a wire groove 8 for accommodating the wire 7 between the temperature detection terminal 6 and the temperature sensing element 4 is further disposed on one side of the metal substrate 5 facing the insulating substrate 1, an insulating layer is coated on an outer surface of the wire 7 to electrically isolate the wire from an external environment, specifically, a core of the wire 7 may be made of copper, aluminum or other metal materials, and the wire groove 8 may be opened by using an edge trimmer or a grooving machine.
The setting of metallic channel 8 provides convenience for the encapsulation of IGBT module, because wire 7 can be acceptd in metallic channel 8, wire 7 itself does not occupy the inner space of IGBT module, also can satisfy the miniaturized design demand of IGBT module, and in addition, wire 7 is acceptd and is also equivalent to providing a heavy protection to wire 7 in metallic channel 8, can effectively avoid the wire impaired.
In the preferred embodiment, the temperature detection terminal 6 is at least partially disposed outside the insulating substrate 1, so as to provide convenience for a user to directly or indirectly obtain the temperature signal transmitted by the temperature sensing element 4 from the temperature detection terminal 6, and it should be noted that the signal transmitted by the temperature sensing element 4 to the temperature detection terminal 6 may be directly a temperature signal, or may be other signals that can be converted into a temperature signal, for example, an electrical signal.
Specifically, in the preferred technical solution of the present embodiment, the temperature sensing element 4 is an insulated thermocouple, the thermocouple is a temperature sensing element, and directly measures the temperature, converts the temperature signal into a thermal electromotive force signal, and converts the thermal electromotive force signal into the temperature of the measured medium through a measuring instrument (not shown), the basic principle of thermocouple temperature measurement is that two material conductors with different components form a closed loop, when a temperature gradient exists at two ends, a current passes through the loop, and at this time, Seebeck electromotive force, which is the thermal electromotive force, exists between the two ends, which is the so-called Seebeck effect. The homogeneous conductors of the two different compositions are thermodes, the higher temperature end being the working end 41 and the lower temperature end being the free end 42, the free end 42 usually being at some constant temperature. According to the functional relation between the thermoelectromotive force and the temperature, a thermocouple graduation table is manufactured; the scores were obtained at a free end temperature of 0 ℃ with different thermocouples having different scores. When a third metal material is connected into the thermocouple loop, as long as the temperatures of two junctions of the material are the same, the thermoelectromotive force generated by the thermocouple keeps unchanged, namely is not influenced by the connection of the third metal into the loop. Therefore, when the thermocouple is used for measuring temperature, a measuring instrument can be connected, and after the thermoelectromotive force is measured, the temperature of the measured medium can be known.
In the preferred embodiment, the employed thermocouple is an insulated thermocouple to ensure the electrical isolation from the external environment (e.g. the metal substrate 5), the working end 41 of the insulated thermocouple is located corresponding to the IGBT chip 2, the free end 42 is connected to the temperature detection terminal 6 to transmit the thermal electromotive force generated by the temperature change of the working end 41, when the case temperature T of the IGBT chip 2 is requiredCDuring detection, a user can connect a measuring instrument to the temperature detection terminal 6, obtain the temperature of the IGBT chip 2 through the thermal electromotive force measured by the measuring instrument, and in some embodiments, the thermal electromotive force value can be converted into a temperature value inside the measuring instrument and displayed.
The use of a thermocouple as the temperature sensing element 4 has the following advantages, firstly, the measurement accuracy of the thermocouple is high: the thermocouple can directly contact with the measured substance in the working mode, so that the temperature of the thermocouple can be more directly sensed, the temperature is more accurately measured, and the temperature measuring method is practicalIn the novel IGBT device, the insulated thermocouple is in direct contact with the insulated substrate to measure the shell temperature T of the IGBT chip 2 corresponding to the position of the insulated thermocoupleC；
Secondly, the measuring range of the thermocouple is larger, the thermocouples are of different types, some thermocouples are high-temperature resistant and can measure the temperature even exceeding 2800 ℃, some thermocouples are also strong in low-temperature resistance due to special materials and can measure the temperature of 269 ℃ below zero, the IGBT chip 2 usually has problems caused by overheating, and the safety of the thermocouples is higher than that of a temperature sensitive diode and an NTC temperature sensor when the temperature rises suddenly;
finally, the thermocouple is relatively stable, and because the thermocouple is usually made of a metal material with good conductivity and high stability, the thermocouple is also relatively good in stability, and can better measure stable temperature.
Specifically, when the insulating thermocouple is a K-type thermocouple with specification TT-K-36-SLE, the depth of the groove 51 is set to be 0.6-0.8 mm, preferably 0.6 mm, and the width is set to be 1.0-1.2 mm, preferably 1.0 mm, and when the insulating thermocouple is a thermocouple with other specification, the size of the groove 51 can be adjusted adaptively according to the size of the selected thermocouple.
It should be noted that, although the limitation of using the NTC temperature sensor as the temperature sensing element 4 is described above, when the NTC temperature sensor is used as the temperature sensing element 4, the case temperature T of the IGBT chip 2 can still be obtained by using the IGBT module package structure provided by this embodimentCIn addition, other temperature sensors can be used for the temperature sensing element 4, and the above embodiments are all within the scope of the present invention.
In the preferred embodiment, the insulating substrate 1 is a DBC board, and the DBC board is a copper-clad ceramic substrate, in which a layer of copper foil 12 is covered on each of the upper and lower surfaces of the ceramic substrate 11, and the copper-clad ceramic substrate can be formed by directly bonding the copper foil 12 to the surface of an alumina or aluminum nitride ceramic substrate at a high temperature, and has excellent electrical insulating property, high thermal conductivity, excellent solderability and high adhesion strength, and a large current-carrying capacity, as well as high electrical conductivity and excellent soldering property of oxygen-free copper, and can be etched into various patterns like a PCB (printed circuit board).
In the preferred technical solution of the present embodiment, the temperature detection terminal 6 and the temperature sensing element 4 are electrically connected to the circuit layer 121 of the ceramic substrate 11 through the copper foil 12, and since the temperature detection terminal 6 and the temperature sensing element 4 are connected by the wire 7, the wire groove 8 needs to be correspondingly formed on the metal substrate 5, which not only has a complex process and a high cost, but also reduces the packaging efficiency of the IGBT module, and the circuit layer 121 formed by the copper foil 12 is used to electrically connect the temperature detection terminal 6 and the temperature sensing element 4, which not only does not need to provide the wire 7 and form the wire groove 8, simplifies the process, and improves the stability of the IGBT module.
In a preferred technical solution of the present embodiment, a method for detecting a temperature of an IGBT chip 2 is provided, which is used for detecting a temperature of the IGBT chip 2 in the IGBT module package structure, where the method for detecting a temperature includes the following steps:
obtaining the shell temperature T of the IGBT chip 2 through the temperature sensing element 4C；
According to the formula
Calculating the junction temperature T of the IGBT chip 2j；
Wherein R isthIs a thermal resistance between the case of the IGBT chip 2 and the IGBT chip 2, and P is a heat loss value of the IGBT chip, specifically, the thermal resistance R refers to a ratio between a temperature difference across the object and a power of the heat source when heat is transferred across the object, and has a unit of kelvin per watt (K/W) or celsius per watt (deg.c/W), and a ratio between a temperature difference across the object and a power of the heat source when heat is transferred across the object, and has a unit of kelvin per watt (K/W) or celsius per watt (deg.c/W), that is, when heat is transferred across
In the above formula, T1Is the temperature, T, of one end of an object2Temperature at the other end of the body and P power of the heat-generating source, i.e. heat loss value。
In the technical scheme, the junction temperature T of the IGBT chip 2 is obtained through the shell temperature of the IGBT chip 2jThe calculated amount is small, the variable is small, and the real junction temperature T of the IGBT chip 2 can be accurately reflectedj。
Specifically, in a preferred embodiment of the present invention, the case temperature T of the IGBT chip 2CIs obtained by a temperature detection terminal 6 connected to the temperature sensing element 4, and further, when the temperature sensing element 4 is an insulated thermocouple, the shell temperature T of the IGBT chip 2 is obtainedCThe acquisition mode is as follows: first, the thermal electromotive force value of the temperature detection terminal 6 connected to the free end 41 of the temperature sensor 4 is detected, and the case temperature T of the IGBT chip 2 detected by the temperature sensor 4 is obtained from the thermal electromotive force valueCIn the present embodiment, since the case of the IGBT chip 2 and the temperature sensor element 4 are both in direct contact with the DBC board having the copper foil 12 provided on both side surfaces thereof, and since the thermal conductivity of the metal copper is excellent, the temperature detected by the temperature sensor element 4 and the case temperature T of the IGBT chip 2 are both excellentCAlmost equal, the junction temperature T of the IGBT chip 2 thus calculatedjAnd the junction temperature measurement method is also accurate, so that the junction temperature of the IGBT chip 2 can be measured quickly, accurately and stably.
So far, the technical solutions of the present invention have been described with reference to the accompanying drawings, but it is obvious to those skilled in the art that the scope of the present invention is not limited to these specific technical solutions. Without departing from the principle of the present invention, a person skilled in the art can make equivalent changes or substitutions to the related technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.
Claims (10)
1. An IGBT module packaging structure, characterized by comprising:
an insulating substrate;
the IGBT chip is arranged on one side of the insulating substrate; and
and the temperature sensing element is attached to one side of the insulating substrate, which is different from the IGBT chip, and is arranged opposite to the IGBT chip through the insulating substrate.
2. The IGBT module package structure of claim 1, further comprising:
and the temperature detection terminal is connected with the temperature sensing element.
3. The IGBT module package structure according to claim 2, wherein the temperature detection terminal is disposed at least partially outside the insulating substrate.
4. The IGBT module package structure of claim 2 or 3, wherein the insulating substrate is a DBC board, and comprises a ceramic substrate and copper foils coated on the upper and lower surfaces of the ceramic substrate.
5. The IGBT module package structure of claim 4, wherein the temperature detection terminal and the temperature sensing element are electrically connected via a circuit layer formed on the ceramic substrate by the copper foil.
6. The IGBT module package structure of any one of claims 2, 3, 5, wherein the temperature sensing element is an insulated thermocouple.
7. The IGBT module package structure of claim 6, further comprising a metal substrate for forming a bottom plate of the IGBT module package structure, wherein a side of the metal substrate near the IGBT chip is provided with a groove for receiving the temperature sensing element.
8. The IGBT module package structure of claim 7, wherein the groove has a depth of 0.6-0.8 mm and a width of 1.0-1.2 mm.
9. The IGBT module package structure according to claim 7, wherein the insulated thermocouple has a working end for directly detecting a case temperature of the IGBT chip and a free end for transferring thermo-electromotive force information to the temperature detection terminal.
10. The IGBT module package structure according to claim 9, wherein the free end and the temperature detection terminal are electrically connected by a wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921868366.5U CN210535657U (en) | 2019-11-01 | 2019-11-01 | IGBT module packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921868366.5U CN210535657U (en) | 2019-11-01 | 2019-11-01 | IGBT module packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210535657U true CN210535657U (en) | 2020-05-15 |
Family
ID=70608355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921868366.5U Active CN210535657U (en) | 2019-11-01 | 2019-11-01 | IGBT module packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210535657U (en) |
-
2019
- 2019-11-01 CN CN201921868366.5U patent/CN210535657U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8057094B2 (en) | Power semiconductor module with temperature measurement | |
| US7871848B2 (en) | Semiconductor power module package without temperature sensor mounted thereon and method of fabricating the same | |
| TWI408379B (en) | Leadframe current sensor | |
| US9559024B2 (en) | Power semiconductor module | |
| CN104251748A (en) | Module for integration into a mobile terminal to measure the ambient temperature | |
| JP3889562B2 (en) | Semiconductor device | |
| JP2677735B2 (en) | Hybrid integrated circuit device | |
| CN110707062A (en) | IGBT module packaging structure and temperature detection method of IGBT chip | |
| TW201447303A (en) | Thermal convection type linear accelerometer | |
| CN210535657U (en) | IGBT module packaging structure | |
| CN212931698U (en) | Packaging assembly and electronic device | |
| CN111446232B (en) | Chip packaging part | |
| JP6351914B1 (en) | Temperature measuring device | |
| JPH0476943A (en) | Semiconductor element | |
| WO2022086699A1 (en) | Temperature sensor of thermal monitoring system for use in power distribution systems | |
| CN218069840U (en) | Power electronic device and over-temperature protection circuit | |
| CN112033561A (en) | Temperature sensing element, temperature measurement component and battery pack | |
| CN210603634U (en) | IGBT module | |
| TWI716447B (en) | Temperature detection device | |
| Riefer et al. | Substrate integrated temperature sensing for bondless power modules | |
| CN212963757U (en) | Temperature sensing element, temperature measurement component and battery pack | |
| WO2002054489A2 (en) | Temperature measurement system and method | |
| CN112393818B (en) | Temperature measurement system and temperature measurement method of power module | |
| JP2003179196A (en) | Power module and protection system thereof | |
| CN218996699U (en) | Power module and electric equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |