CN210529033U - Packaging barrier film - Google Patents

Packaging barrier film Download PDF

Info

Publication number
CN210529033U
CN210529033U CN201920796401.0U CN201920796401U CN210529033U CN 210529033 U CN210529033 U CN 210529033U CN 201920796401 U CN201920796401 U CN 201920796401U CN 210529033 U CN210529033 U CN 210529033U
Authority
CN
China
Prior art keywords
layer
oxide
silicon
thickness
oxynitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201920796401.0U
Other languages
Chinese (zh)
Inventor
胡文玮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shantou Wanshun New Material Group Co ltd
Original Assignee
Shantou Wanshun New Material Group Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shantou Wanshun New Material Group Co ltd filed Critical Shantou Wanshun New Material Group Co ltd
Priority to CN201920796401.0U priority Critical patent/CN210529033U/en
Application granted granted Critical
Publication of CN210529033U publication Critical patent/CN210529033U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Laminated Bodies (AREA)

Abstract

The utility model provides a packaging barrier film, which comprises a base film, wherein a barrier layer is arranged on the base film, and the barrier layer sequentially comprises a metal oxide layer, a metal oxide-silicon oxide gradient layer and a silicon oxide layer from bottom to top; or the barrier layer is sequentially a metal oxynitride layer, a metal oxynitride-silicon oxynitride gradient layer and a silicon oxynitride layer from bottom to top. The utility model discloses a packing barrier film's separation performance is excellent, effectively reduces the aqueous vapor and invades.

Description

Packaging barrier film
Technical Field
The utility model relates to a protection film technical field especially relates to a packing barrier film.
Background
Chinese patent No. 201580002853.1 discloses a wavelength conversion sheetThe O/Si ratio of the protective film is controlled to be 1.7-2.0, so that excellent water vapor barrier effect and good optical transmittance can be obtained. However, since the O/Si ratio is in an unsaturated state, O is in this state2Very sensitive, slightly less O2The fluctuation can affect the film coating speed, and the difference of the thickness is caused; especially, in the production of large-scale wide continuity, the deviation of the uniformity of the width and the length is easy to be caused, thereby causing the low yield.
SUMMERY OF THE UTILITY MODEL
The utility model provides a production process is stable, improves the yields, and the separation performance is excellent, effectively reduces the packing barrier film that the aqueous vapor invaded.
The utility model adopts the technical proposal that: a packaging barrier film, comprising: the barrier layer is arranged on the base film and sequentially comprises a metal oxide layer, a metal oxide-silicon oxide gradient layer and a silicon oxide layer from bottom to top; or the barrier layer is sequentially a metal oxynitride layer, a metal oxynitride-silicon oxynitride gradient layer and a silicon oxynitride layer from bottom to top.
Further, the metal oxide layer is a titanium oxide layer, an aluminum oxide layer, a zinc oxide layer, or a tin oxide layer, and the metal oxynitride layer is a titanium oxynitride layer, an aluminum oxynitride layer, a zinc oxynitride layer, or a tin oxynitride layer. .
Further, the thickness of the base film is between 6um and 50 um.
Further, the thickness of the base film is between 6um and 38 um.
Further, the thickness of the base film is between 6um and 25 um.
Further, the thickness of the barrier layer is between 10nm and 60 nm.
Further, the sum of the thicknesses of the metal oxide layer and the metal oxide-silicon oxide gradient layer is between 10% and 90% of the total thickness of the barrier layer.
Further, the sum of the thicknesses of the metal oxide layer and the metal oxide-silicon oxide gradient layer is between 10% and 50% of the total thickness of the barrier layer.
Further, the thickness of the metal oxide-silicon oxide gradient layer is between 10% and 90% of the sum of the thicknesses of the metal oxide layer and the metal oxide-silicon oxide gradient layer.
Further, the thickness of the metal oxide-silicon oxide gradient layer is between 10% and 50% of the sum of the thicknesses of the metal oxide layer and the metal oxide-silicon oxide gradient layer.
Compared with the prior art, the packaging barrier film of the utility model has the advantages that the barrier layer is sequentially provided with the metal oxide layer, the metal oxide-silicon oxide gradient layer and the silicon oxide layer from bottom to top; or a metal oxynitride layer, a metal oxynitride-silicon oxynitride gradient layer and a silicon oxynitride layer are sequentially arranged from bottom to top; therefore, the packaging barrier film has excellent barrier performance and effectively reduces the invasion of moisture.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings, there is shown in the drawings,
FIG. 1: the utility model discloses a production system for packaging barrier films;
FIG. 2: the utility model discloses a schematic diagram of an embodiment of a packaging barrier film;
FIG. 3: a schematic view of another embodiment of the packaging barrier film of the present invention;
Detailed Description
The following detailed description of the embodiments of the present invention will be made with reference to the accompanying drawings. It is to be understood that the description of the embodiments herein is for purposes of illustration and explanation only and is not intended to limit the invention.
As shown in fig. 2, the packaging barrier film of the present invention comprises: the base film 1 is provided with a barrier layer on the base film 1, and the barrier layer comprises a metal oxide layer 2, a metal oxide-silicon oxide gradient layer 3 and a silicon oxide layer 4 from bottom to top in sequence. Further, the thickness of the barrier layer is between 10nm and 60 nm.
The metal oxide layer 2 is a titanium oxide layer, an aluminum oxide layer, a zinc oxide layer, or a tin oxide layer, preferably a titanium oxide layer or an aluminum oxide layer, and most preferably a titanium oxide layer.
The base film 1 is a PET (polyethylene terephthalate) film, a nylon film, or an OPP (ortho-phenylphenol) film, and is preferably a PET film. Further, the thickness of the base film 1 is between 6um to 50um, more preferably between 6um to 38um, and most preferably between 6um to 25 um.
The sum of the thicknesses of the two layers of the metal oxide layer 2 and the metal oxide-silicon oxide gradient layer 3 is 10 to 90 percent of the total thickness of the barrier layer, and preferably 10 to 50 percent.
The thickness of the metal oxide-silicon oxide gradient layer 3 is between 10% and 90%, preferably between 10% and 50% of the sum of the thicknesses of the metal oxide layer 2 and the metal oxide-silicon oxide gradient layer 3.
In another embodiment, as shown in fig. 3, the barrier layer is a metal oxynitride layer 5, a metal oxynitride-silicon oxynitride graded layer 6, and a silicon oxynitride layer 7 from bottom to top.
The metal oxynitride layer is a titanium oxynitride layer, an aluminum oxynitride layer, a zinc oxynitride layer, or a tin oxynitride layer, preferably a titanium oxynitride layer or an aluminum oxynitride layer, and most preferably a titanium oxynitride layer.
As shown in fig. 1, the performance of the packaging barrier film of the present invention was verified by experiments below;
example 1:
using a PET film as a base film, putting titanium metal at a position entering a crucible 8 and silicon at a position leaving the crucible 8 during film running, simultaneously evaporating the titanium and silicon materials by using an electron beam evaporation device 9, introducing oxygen in the reaction process, and obtaining a titanium oxide layer, a titanium oxide-silicon oxide gradient layer and a silicon oxide layer by adjusting the proportion of the titanium and the silicon in the crucible 8 and the oxygen amount, wherein the barrier layer has a three-layer structure and a thickness of 20 nm; wherein the thickness of the titanium oxide layer is 1nm, the sum of the thicknesses of the titanium oxide-silicon oxide gradient layers is 1nm, and the thickness of the silicon oxide layer is 18 nm.
Example 2:
the same procedure as in example 1 was repeated, except that the titanium oxide layer was 5nm thick, the titanium oxide-silicon oxide graded layer was 5nm thick, the silicon oxide layer was 10nm thick, and the total thickness of the barrier layer was 20 nm.
Example 3:
the same procedure as in example 1 was repeated, except that the titanium oxide layer was 9nm thick, the titanium oxide-silicon oxide graded layer was 9nm thick, the silicon oxide layer was 2nm thick, and the total thickness of the barrier layer was 20 nm.
Example 4:
in the same manner as in example 1, the sum of the thicknesses of the titanium oxide layer and the titanium oxide-silicon oxide graded layer was 30nm, the thickness of the silicon oxide layer was 30nm, and the total thickness of the barrier layer was 60 nm.
Example 5:
the same procedure as in example 1 was repeated, except that the titanium oxide layer was 9nm thick, the titanium oxide-silicon oxide graded layer was 1nm thick, the silicon oxide layer was 10nm thick, and the total thickness of the barrier layer was 20 nm.
Example 6:
the same procedure as in example 1 was repeated, except that the titanium oxide layer was 5nm thick, the titanium oxide-silicon oxide graded layer was 5nm thick, the silicon oxide layer was 10nm thick, and the total thickness of the barrier layer was 20 nm.
Example 7:
the same procedure as in example 1 was repeated, except that the titanium oxide layer was 1nm thick, the titanium oxide-silicon oxide graded layer was 9nm thick, the silicon oxide layer was 10nm thick, and the total thickness of the barrier layer was 20 nm.
Example 8:
the same manner as in example 1, except that the evaporation materials were titanium oxide and silicon oxide.
Example 9:
using a PET film as a base film, putting aluminum metal at a position entering a crucible 8 and silicon at a position leaving the crucible 8 during film running, simultaneously evaporating the aluminum and silicon materials by using an electron beam evaporation device 9, introducing oxygen in the reaction process, and obtaining an alumina layer, an alumina-silica gradient layer and a silica layer by adjusting the proportion of the aluminum and the silicon in the crucible 8 and the oxygen amount, wherein the three-layer structure is a blocking layer with the thickness of 20 nm; wherein the thickness of the alumina layer is 5nm, the thickness of the alumina-silica gradient layer is 5nm, and the thickness of the silica layer is 10 nm.
Example 10:
using a PET film as a base film, putting zinc oxide at a position entering a crucible 8 and silicon at a position leaving the crucible 8 during film running, simultaneously evaporating the zinc oxide and the silicon materials by using an electron beam evaporation device 9, introducing oxygen in the reaction process, and obtaining a zinc oxide layer, a zinc oxide-silicon oxide gradient layer and a silicon oxide layer by adjusting the proportion of the zinc oxide and the silicon in the crucible 8 and the oxygen amount, wherein the barrier layer has a three-layer structure and a thickness of 20 nm; wherein the thickness of the zinc oxide layer is 5nm, the thickness of the zinc oxide-silicon oxide gradient layer is 5nm, and the thickness of the silicon oxide layer is 10 nm.
Example 11:
using a PET film as a base film, putting tin oxide at a position entering a crucible 8 and silicon at a position leaving the crucible 8 during film running, simultaneously evaporating the tin oxide and the silicon materials by using an electron beam evaporation device 9, introducing oxygen in the reaction process, and obtaining a tin oxide layer, a tin oxide-silicon oxide gradient layer and a silicon oxide layer which are of a three-layer structure and have a thickness of 20nm by adjusting the proportion of the tin oxide and the silicon in the crucible 8 and the oxygen amount; wherein the thickness of the tin oxide layer is 5nm, the thickness of the tin oxide-silicon oxide gradient layer is 5nm, and the thickness of the silicon oxide layer is 10 nm.
Example 12:
using a PET film as a base film, putting titanium at a position entering a crucible 8 and silicon at a position leaving the crucible 8 during film running, simultaneously evaporating the titanium and silicon materials by using an electron beam evaporation device 9, introducing oxygen and nitrogen in the reaction process, and obtaining a titanium oxynitride layer, a titanium oxynitride-silicon oxynitride gradient layer and a silicon oxynitride layer by adjusting the proportion of the titanium and the silicon in the crucible 8 and the amount of the oxygen and the nitrogen, wherein the barrier layer has a three-layer structure and a thickness of 20 nm; the thickness of the titanium oxynitride layer is 5nm, the thickness of the titanium oxynitride-silicon oxynitride gradient layer is 5nm, and the thickness of the silicon oxynitride layer is 10 nm.
Comparative example 1:
using PET film as base film, putting silicon in crucible 8, evaporating silicon material by electron beam evaporation equipment 9, introducing oxygen in reaction process, and obtaining barrier film with silicon oxide layer thickness of 20nm by adjusting oxygen amount in crucible 8.
Comparative example 2:
using PET film as base film, putting titanium metal in crucible 8, evaporating titanium material with electron beam evaporation equipment 9, introducing oxygen in reaction process, and adjusting oxygen amount in crucible 8 to obtain barrier film with titanium oxide layer thickness of 20nm
Comparative example 3:
using PET film as base film, contacting the surface of the base film with non-hydroxylated silicon-containing precursor or metal organic precursor, adsorbing on the surface, providing active oxygen substance on the surface, and adding aluminum and silicon materials to form aluminum-silicon-oxygen compound layer with refractive index of 1.6 and thickness of 20 nm.
The results of the relevant performance tests for examples 1-8 are given in the following table:
watch 1
Figure DEST_PATH_GDA0002387636530000051
Figure DEST_PATH_GDA0002387636530000061
Figure DEST_PATH_GDA0002387636530000071
The results of the relevant performance tests for examples 9-12 are given in the following table:
watch two
Figure DEST_PATH_GDA0002387636530000072
The results of the related performance tests of comparative examples 1-3 are shown in the following table:
Figure DEST_PATH_GDA0002387636530000073
Figure DEST_PATH_GDA0002387636530000081
comparing the above tables one, two and three leads to the following conclusions:
1. as can be seen from example 1 and comparative example 1, the barrier layer having a titanium oxide-silicon oxide graded layer has a significantly improved barrier effect and excellent characteristics in reliability, compared to a pure silicon oxide layer.
2. Examples 1,2,3 and comparative example 2 show that pure titanium oxide has good blocking effect, but the color is yellowish due to its too high refractive index, and examples 1,2,3, in combination with a titanium oxide layer as the bottom layer, a titanium oxide-silicon oxide graded layer, and a silicon oxide layer as the top layer, not only maintain good blocking characteristics, but also improve light transmittance and improve the problem of yellowish film surface.
3. In examples 1,2 and 3 and comparative examples 1 and 2, when the thickness of the silicon oxide layer is 10% to 90% of the total thickness of the barrier layer, the titanium oxide layer and the titanium oxide-silicon oxide graded layer are used together, so that the effects of transmittance, color and barrier property can be achieved at the same time. When the thickness of the silicon oxide layer is greater than 90%, the characteristics of the silicon oxide layer approach to the pure silicon oxide barrier layer, and the pure silicon oxide layer is exposed; when the thickness of the silicon oxide layer is less than 10%, the ratio of the titanium oxide layer to the titanium oxide-silicon oxide gradient layer is too high, which is close to the structure of pure titanium oxide, and the problems of light transmittance reduction and yellow color are caused. Therefore, the effect is best when the sum of the thicknesses of the titanium oxide layer and the titanium oxide-silicon oxide gradient layer is 10 to 90 percent of the total thickness of the barrier layer.
4. Examples 2 and 4 show that when the total thickness of the barrier layer is less than 60nm, a barrier layer with good optical transmittance, b value and barrier property can be obtained, and the barrier layer has bending resistance; when the thickness of the barrier layer is greater than 60nm, the bending resistance is poor, which is not favorable for the application of the packaging material.
5. Examples 5,6 and 7 show that when the thickness of the titanium oxide-silicon oxide gradient layer is between 10% and 90% of the sum of the thicknesses of the titanium oxide layer and the titanium oxide-silicon oxide gradient layer, good optical, barrier and signal effects can be achieved, and when the content of the titanium oxide-silicon oxide gradient layer is less than 10%, the titanium oxide-silicon oxide gradient layer tends to be a structure with two titanium oxide layers and two silicon oxide layers, and the problem of adhesion of different materials is easy to occur at the interface position. When the content is more than 90%, the titanium oxide layer of the primer layer is too thin to exhibit excellent adhesion.
6. Example 9 and comparative example 3 show that the barrier layer of aluminum-silicon oxide deposited by electron beam deposition process has the same barrier effect as the barrier layer of aluminum-silicon oxide deposited by ALD, but the production efficiency is improved by 20 times.
In summary, the packaging barrier film of the utility model is provided with the barrier layer comprising a metal oxide layer, a metal oxide-silicon oxide gradient layer and a silicon oxide layer from bottom to top in sequence; or a metal oxynitride layer, a metal oxynitride-silicon oxynitride gradient layer and a silicon oxynitride layer are sequentially arranged from bottom to top; therefore, the packaging barrier film has excellent barrier performance and effectively reduces the invasion of moisture.
As long as the idea created by the present invention is not violated, various different embodiments of the present invention can be arbitrarily combined, and all the embodiments should be regarded as the content disclosed by the present invention; the utility model discloses an in the technical conception scope, carry out multiple simple variant and different embodiments to technical scheme and go on not violating the utility model discloses the arbitrary combination of the thought of creation all should be within the protection scope.

Claims (10)

1. A packaging barrier film, comprising: the barrier layer is arranged on the base film and sequentially comprises a metal oxide layer, a metal oxide-silicon oxide gradient layer and a silicon oxide layer from bottom to top; or the barrier layer is sequentially a metal oxynitride layer, a metal oxynitride-silicon oxynitride gradient layer and a silicon oxynitride layer from bottom to top.
2. The packaging barrier film of claim 1 wherein: the metal oxide layer is a titanium oxide layer, an aluminum oxide layer, a zinc oxide layer or a tin oxide layer, and the metal oxynitride layer is a titanium oxynitride layer, an aluminum oxynitride layer, a zinc oxynitride layer or a tin oxynitride layer.
3. The packaging barrier film of claim 1 wherein: the thickness of the base film is between 6um and 50 um.
4. The packaging barrier film of claim 1 wherein: the thickness of the base film is between 6um and 38 um.
5. The packaging barrier film of claim 1 wherein: the thickness of the base film is between 6um and 25 um.
6. The packaging barrier film of claim 1 wherein: the thickness of the barrier layer is between 10nm and 60 nm.
7. The packaging barrier film of claim 1 wherein: the sum of the thicknesses of the metal oxide layer and the metal oxide-silicon oxide gradient layer is 10-90% of the total thickness of the barrier layer.
8. The packaging barrier film of claim 1 wherein: the sum of the thicknesses of the metal oxide layer and the metal oxide-silicon oxide gradient layer is 10-50% of the total thickness of the barrier layer.
9. The packaging barrier film of claim 1 wherein: the thickness of the metal oxide-silicon oxide gradient layer is 10% -90% of the sum of the thicknesses of the metal oxide layer and the metal oxide-silicon oxide gradient layer.
10. The packaging barrier film of claim 1 wherein: the thickness of the metal oxide-silicon oxide gradient layer is 10% -50% of the sum of the thicknesses of the metal oxide layer and the metal oxide-silicon oxide gradient layer.
CN201920796401.0U 2019-05-29 2019-05-29 Packaging barrier film Active CN210529033U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201920796401.0U CN210529033U (en) 2019-05-29 2019-05-29 Packaging barrier film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920796401.0U CN210529033U (en) 2019-05-29 2019-05-29 Packaging barrier film

Publications (1)

Publication Number Publication Date
CN210529033U true CN210529033U (en) 2020-05-15

Family

ID=70594029

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201920796401.0U Active CN210529033U (en) 2019-05-29 2019-05-29 Packaging barrier film

Country Status (1)

Country Link
CN (1) CN210529033U (en)

Similar Documents

Publication Publication Date Title
US9190572B2 (en) Light emitting diode and fabrication method thereof
TWI695462B (en) Thin film packaging structure and display device having the same
KR102418493B1 (en) Thin film trnasistor comprising 2d semiconductor and display device comprising the same
US9960260B2 (en) Metal oxide thin film transistor and a preparation method thereof
RU2014129764A (en) COATED PRODUCTS WITH LOW EMISSION ABILITY WITH A SYSTEM (SYSTEMS) OF BARRIER LAYERS, INCLUDING (INCLUDING) MULTIPLE DIELECTRIC LAYERS, AND / OR METHODS
CN110158033B (en) Enhanced barrier film and preparation method thereof
EA201171111A1 (en) SUBSTRATE EQUIPPED WITH A THERMAL PROPERTIES PACKAGE CONTAINING A LAYER WITH A HIGH REFINEMENT INDICATOR
WO2015043176A1 (en) Flexible display substrate and preparation method therefor, and flexible display device
JP2011097062A5 (en)
JP2012528488A5 (en)
TR201907928T4 (en) Substrate equipped with a heating-capable stack specifically for producing heated glass.
WO2007054655A8 (en) Substrate which is equipped with a stack having thermal properties
RU2010135529A (en) LAYER BARRIER Hindering Penetration
KR20150037669A (en) Substrate for organic electronic device and manufacturing method thereof
CN104882486A (en) High-mobility high-stability metallic oxide thin film transistor and preparation technology
EA201590612A1 (en) SUBSTRATE EQUIPPED WITH A PACKAGE WITH HEAT PROPERTIES AND ABSORBING LAYER
US20190302499A1 (en) Packaging assembly and preparation method thereof, and display device
CN104779352A (en) Optical detector based on graphene and nano-structure perovskite material and preparation method
US20120175607A1 (en) Thin film transistor structure and manufacturing method thereof
TW201351657A (en) Thin film transistor substrate and display
CN109148539A (en) A kind of tft array substrate and preparation method, display device
CN109768138A (en) A kind of light-emitting diode chip for backlight unit and preparation method thereof
CN210529033U (en) Packaging barrier film
CN103730373B (en) The preparation method of a kind of semiconductor devices and semiconductor devices
US9917205B2 (en) Oxide semiconductor thin film, thin film transistor, manufacturing method and device

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant