CN210516949U - Capacitance coupling structure of dielectric filter - Google Patents
Capacitance coupling structure of dielectric filter Download PDFInfo
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- CN210516949U CN210516949U CN201921838392.3U CN201921838392U CN210516949U CN 210516949 U CN210516949 U CN 210516949U CN 201921838392 U CN201921838392 U CN 201921838392U CN 210516949 U CN210516949 U CN 210516949U
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Abstract
The utility model discloses a capacitive coupling structure of a dielectric filter, which comprises a dielectric filter body, and a first debugging hole and a second debugging hole which are positioned on the dielectric filter body, wherein at least one negative coupling hole is arranged between the first debugging hole and the second debugging hole, and the opening direction of the negative coupling hole is the same as that of the first debugging hole and the second debugging hole; the negative coupling hole is a stepped hole and comprises an upper through hole and a lower blind hole, one end of the upper through hole of the stepped hole extends to the outer side of the filter body, the other end of the upper through hole is located inside the filter body and connected with the lower blind hole, one end, far away from the upper through hole, of the lower blind hole is a closed end, and the inner walls of the first debugging hole, the second debugging hole and the lower blind hole are provided with conducting layers. The utility model discloses can realize capacitive coupling's while, realized the control to the parasitic passband frequency of distal end.
Description
Technical Field
The utility model relates to a dielectric filter's capacitive coupling structure belongs to the communication technology field.
Background
With the increasing development of wireless communication technology, wireless communication base stations are distributed more and more densely, the volume requirement of the base stations is smaller and smaller, wherein the volume ratio of a radio frequency front-end filter module in the base stations is larger, and therefore the volume requirement of the filter is smaller and smaller. However, when the volume of the metal coaxial cavity filter is reduced, it is found that: the smaller the filter volume, the higher the surface current, the higher the losses and the lower the power carrying capacity, i.e. the smaller the power capacity. That is, as the volume of the metal coaxial cavity filter is reduced, its performance index is deteriorated. At present, a miniaturized filter, that is, a solid dielectric filter is widely used, but a structure for realizing capacitive coupling (or called negative coupling) in the solid dielectric filter is complex, the process realization difficulty is high, and a parasitic passband is easily generated at a frequency close to the passband, so that how to provide a dielectric filter with a simple structure and low process difficulty becomes a research direction of a person skilled in the art.
Disclosure of Invention
The utility model aims at providing a dielectric filter's capacitive coupling structure, this dielectric filter's capacitive coupling structure can realize the control to the parasitic passband frequency of distal end when realizing capacitive coupling.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a capacitive coupling structure of a dielectric filter comprises a dielectric filter body, a first debugging hole and a second debugging hole, wherein the first debugging hole and the second debugging hole are positioned on the dielectric filter body; the negative coupling hole is a stepped hole and comprises an upper through hole and a lower blind hole, one end of the upper through hole of the stepped hole extends to the outer side of the filter body, the other end of the upper through hole is located inside the filter body and connected with the lower blind hole, one end, far away from the upper through hole, of the lower blind hole is a closed end, and the inner walls of the first debugging hole, the second debugging hole and the lower blind hole are provided with conducting layers.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the depth of the upper through hole of the negative coupling hole is smaller than the depths of the first debugging hole and the second debugging hole.
2. In the above scheme, the total depth of the negative coupling hole is greater than the depths of the first debugging hole and the second debugging hole respectively.
3. In the above scheme, there are 2 negative coupling holes.
4. In the scheme, the total depth of the negative coupling hole is 1.1-1.3 times of the depth of the first debugging hole.
5. In the above scheme, the first debugging hole and the second debugging hole are blind holes.
6. In the above scheme, the dielectric filter body is made of a non-metallic material.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
1. the utility model discloses dielectric filter's capacitive coupling structure, when it realized capacitive coupling, realized the control to the parasitic passband frequency of distal end, through the through-hole diameter and the adjustment of blind hole diameter size and both degree of depth proportions down, can be used to realize less negative coupling, generally can reach below 50MHz, and the blind hole can also leave thick thickness bottom the medium this moment, the actual production and processing of being convenient for, and this is especially important to narrow band filter.
2. The utility model discloses dielectric filter's capacitive coupling structure, its negative coupling hole adopt the shoulder hole, the integrated configuration of through-hole and blind hole promptly, and blind hole one end is the blind end, and the degree of depth in negative coupling hole is 1.1~1.3 times of the first debugging hole degree of depth, and the problem of the press forming difficulty that the too dark production in negative coupling hole can be avoided to this structure.
3. The utility model discloses the electric capacity coupling structure of dielectric filter, only the blind hole part sets up the conducting layer in its negative coupling hole, does not set up the conducting layer on the transition step of through-hole and blind hole, and this structure controls the negative coupling through adjusting conducting layer area and conducting layer position on the negative coupling hole strong and weak, and the more deep the through-hole degree of depth, the stronger the negative coupling; the deeper the blind hole the weaker the negative coupling.
Drawings
Fig. 1 is a schematic diagram of a capacitive coupling structure of the dielectric filter of the present invention.
In the above drawings: 1. a dielectric filter body; 2. a first pilot hole; 3. a second pilot hole; 4. a negative coupling aperture.
Detailed Description
In the description of this patent, it is noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, as they may be fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The meaning of the above terms in this patent may be specifically understood by those of ordinary skill in the art.
Example 1: a capacitive coupling structure of a dielectric filter comprises a dielectric filter body 1, and a first debugging hole 2 and a second debugging hole 3 which are positioned on the dielectric filter body 1, wherein at least one negative coupling hole 4 is arranged between the first debugging hole 2 and the second debugging hole 3, and the opening direction of the negative coupling hole 4 is the same as that of the first debugging hole 2 and the second debugging hole 3; negative coupling hole 4 is the shoulder hole, including upper portion through-hole and lower part blind hole, and the upper portion through-hole one end of this shoulder hole extends to the filter body 1 outside, and the other end is located filter body 1 inside, is connected with lower part blind hole, the one end that the upper portion through-hole was kept away from to the lower part blind hole is the blind end, the inner wall of first debugging hole 2, second debugging hole 3 and lower part blind hole all is equipped with the conducting layer.
The depth of the upper through hole of the negative coupling hole 4 is smaller than the depths of the first debugging hole 2 and the second debugging hole 3.
The total depth of the negative coupling holes 4 is greater than the depths of the first and second pilot holes 2 and 3, respectively.
The total depth of the negative coupling hole 4 is 1.1 times the depth of the first pilot hole 2.
The first debugging hole 2 and the second debugging hole 3 are blind holes.
The dielectric filter body 1 is made of a non-metallic material.
Example 2: a capacitive coupling structure of a dielectric filter comprises a dielectric filter body 1, and a first debugging hole 2 and a second debugging hole 3 which are positioned on the dielectric filter body 1, wherein at least one negative coupling hole 4 is arranged between the first debugging hole 2 and the second debugging hole 3, and the opening direction of the negative coupling hole 4 is the same as that of the first debugging hole 2 and the second debugging hole 3; negative coupling hole 4 is the shoulder hole, including upper portion through-hole and lower part blind hole, and the upper portion through-hole one end of this shoulder hole extends to the filter body 1 outside, and the other end is located filter body 1 inside, is connected with lower part blind hole, the one end that the upper portion through-hole was kept away from to the lower part blind hole is the blind end, the inner wall of first debugging hole 2, second debugging hole 3 and lower part blind hole all is equipped with the conducting layer.
The depth of the upper through hole of the negative coupling hole 4 is smaller than the depths of the first debugging hole 2 and the second debugging hole 3.
The number of the negative coupling holes 4 is 2.
The total depth of the negative coupling hole 4 is 1.3 times the depth of the first pilot hole 2.
When the capacitive coupling structure of the dielectric filter is adopted, the control on the frequency of a far-end parasitic passband is realized while the capacitive coupling is realized, the small negative coupling can be realized through the adjustment of the diameter of the through hole, the diameter of the lower blind hole and the depth proportion of the through hole and the lower blind hole, the negative coupling generally can reach below 50MHz, the lower blind hole and the bottom of the medium can be left with thick thickness, the practical production and processing are facilitated, and the narrow-band filter is particularly important.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (6)
1. A capacitive coupling structure for a dielectric filter, characterized by: the medium filter comprises a medium filter body (1) and a first debugging hole (2) and a second debugging hole (3) which are positioned on the medium filter body (1), wherein at least one negative coupling hole (4) is arranged between the first debugging hole (2) and the second debugging hole (3), and the opening direction of the negative coupling hole (4) is the same as that of the first debugging hole (2) and the second debugging hole (3); negative coupling hole (4) are the shoulder hole, including upper portion through-hole and lower part blind hole, and the upper portion through-hole one end of this shoulder hole extends to the wave filter body (1) outside, and the other end is located inside wave filter body (1), is connected with the lower part blind hole, the one end that the upper portion through-hole was kept away from to the lower part blind hole is the blind end, the inner wall of first debugging hole (2), second debugging hole (3) and lower part blind hole all is equipped with the conducting layer.
2. The capacitive coupling structure of a dielectric filter according to claim 1, wherein: the depth of the upper through hole of the negative coupling hole (4) is smaller than the depths of the first debugging hole (2) and the second debugging hole (3).
3. The capacitive coupling structure of a dielectric filter according to claim 1, wherein: the total depth of the negative coupling hole (4) is respectively greater than the depth of the first debugging hole (2) and the depth of the second debugging hole (3).
4. The capacitive coupling structure of a dielectric filter according to claim 1, wherein: the number of the negative coupling holes (4) is 2.
5. The capacitive coupling structure of a dielectric filter according to claim 2, wherein: the total depth of the negative coupling hole (4) is 1.1-1.3 times of the depth of the first debugging hole (2).
6. The capacitive coupling structure of a dielectric filter according to claim 1, wherein: the dielectric filter body (1) is made of non-metal materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921838392.3U CN210516949U (en) | 2019-10-29 | 2019-10-29 | Capacitance coupling structure of dielectric filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921838392.3U CN210516949U (en) | 2019-10-29 | 2019-10-29 | Capacitance coupling structure of dielectric filter |
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| CN210516949U true CN210516949U (en) | 2020-05-12 |
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| CN201921838392.3U Withdrawn - After Issue CN210516949U (en) | 2019-10-29 | 2019-10-29 | Capacitance coupling structure of dielectric filter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600841A (en) * | 2019-10-29 | 2019-12-20 | 苏州海瓷达材料科技有限公司 | Capacitance coupling structure of dielectric filter |
| CN111478003A (en) * | 2020-06-03 | 2020-07-31 | 安徽浩源恒方通信技术有限公司 | Capacitance coupling structure of dielectric waveguide filter |
| CN110600841B (en) * | 2019-10-29 | 2024-06-07 | 苏州瑞玛精密工业股份有限公司 | Capacitive coupling structure of dielectric filter |
-
2019
- 2019-10-29 CN CN201921838392.3U patent/CN210516949U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600841A (en) * | 2019-10-29 | 2019-12-20 | 苏州海瓷达材料科技有限公司 | Capacitance coupling structure of dielectric filter |
| CN110600841B (en) * | 2019-10-29 | 2024-06-07 | 苏州瑞玛精密工业股份有限公司 | Capacitive coupling structure of dielectric filter |
| CN111478003A (en) * | 2020-06-03 | 2020-07-31 | 安徽浩源恒方通信技术有限公司 | Capacitance coupling structure of dielectric waveguide filter |
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Effective date of registration: 20210415 Address after: No.28, Huchen Road, Huguan Industrial Park, Suzhou high tech Zone, Jiangsu Province, 215000 Patentee after: SUZHOU CHEERSSON PRECISION INDUSTRY Co.,Ltd. Address before: 215000 workshop 3, Dongyun science and Technology Park, west of Pangshan Road, Wujiang Economic and Technological Development Zone, Suzhou City, Jiangsu Province Patentee before: Suzhou haicida Material Technology Co.,Ltd. |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20200512 Effective date of abandoning: 20240607 |