CN210490081U - Direct current driving device and system of external modulation laser - Google Patents

Direct current driving device and system of external modulation laser Download PDF

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Publication number
CN210490081U
CN210490081U CN201922013644.5U CN201922013644U CN210490081U CN 210490081 U CN210490081 U CN 210490081U CN 201922013644 U CN201922013644 U CN 201922013644U CN 210490081 U CN210490081 U CN 210490081U
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current
modulation laser
external modulation
driving
control switch
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苏樊城
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O Net Technologies Shenzhen Group Co Ltd
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O Net Communications Shenzhen Ltd
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Abstract

The utility model relates to the laser field, in particular to a direct current driving device and a system of an external modulation laser; the direct current drive device includes: a power supply input terminal; the control switch is respectively electrically connected with the power input end and the anode of the external modulation laser and is used for controlling the magnitude of the driving current input into the external modulation laser; the current detection circuit is arranged between the control switch and the external modulation laser and is used for monitoring the driving current; the control switch controls the magnitude of the driving current of the input external modulation laser according to the monitoring result of the current detection circuit; compared with the prior art, the utility model discloses a design an outer direct current drive system who modulates the laser instrument, the direct current drive demand of this type of outer modulation laser instrument has been solved to the outer modulation laser instrument of inside LD negative pole fixed ground connection specially.

Description

Direct current driving device and system of external modulation laser
Technical Field
The utility model relates to a laser instrument field, concretely relates to direct current drive arrangement and system of outer modulation laser instrument.
Background
For the aging requirement of the external modulation laser, a direct current driving system needs to be designed, because the negative electrode of the LD inside the external modulation laser is fixedly grounded, in the prior art, the V-I direct current driving system is all for the condition of being open-circuited with the positive electrode and the negative electrode of the LD, and is not suitable for the external modulation laser with the negative electrode of the internal LD fixedly grounded.
Therefore, there is a need for an improvement to the existing dc driving system, and a V-I dc driving system for the external modulation laser is realized through circuit improvement.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model lies in, to the above-mentioned defect of prior art, a direct current drive arrangement and system of outer modulation laser instrument are provided, are used for the outer modulation laser instrument of the fixed ground connection of inside LD negative pole specially.
The utility model provides a technical scheme that its technical problem adopted is: the dc driving device for an external modulation laser is provided, wherein a negative electrode of the external modulation laser is grounded, and preferably, the dc driving system comprises:
a power supply input terminal;
the control switch is respectively electrically connected with the power input end and the anode of the external modulation laser and is used for controlling the magnitude of the driving current input into the external modulation laser;
the current detection circuit is arranged between the control switch and the external modulation laser and is used for monitoring the driving current;
the control switch controls the magnitude of the driving current of the input external modulation laser according to the monitoring result of the current detection circuit.
The control switch comprises an MOS tube and a comparator for adjusting the required driving current, and the output end of the comparator is connected with the G pole of the MOS tube.
In a preferred embodiment, the current detection circuit includes a feedback resistor for feeding back the driving current and a voltage detection unit for detecting a voltage across the feedback resistor.
The voltage detection unit includes a detection chip, an input end of the detection chip is connected to the feedback resistor, an output end of the detection chip is connected to an input end of the control switch, wherein the detection chip detects a voltage across the feedback resistor and feeds the voltage back to the control switch, and the control switch controls a driving current of the externally modulated laser.
The preferred scheme is that a first resistor is also connected in series between the output end of the detection chip and the input end of the control switch.
The preferred scheme is that a second resistor is connected in series between the output end of the comparator and the G pole of the MOS tube.
In a preferred embodiment, a first capacitor is connected in series between the inverting input terminal of the comparator and the output terminal thereof.
And a second capacitor is arranged between the S pole and the G pole of the MOS tube.
Preferably, a third resistor for current limiting protection is further disposed between the current detection circuit and the external modulation laser.
For solving the problem that prior art exists, the utility model also provides a direct current drive system, its preferred scheme lies in: the direct current driving system comprises the direct current driving device and a power supply, wherein the power supply is connected with the S pole of the MOS tube and provides driving current for the direct current driving device.
The beneficial effects of the utility model reside in that, compared with the prior art, the utility model discloses a design an outer direct current drive arrangement and the system of modulation laser instrument, the direct current drive demand of this type of outer modulation laser instrument has been solved to the outer modulation laser instrument of inside LD negative pole fixed ground connection specially.
Drawings
The invention will be further explained with reference to the drawings and examples, wherein:
fig. 1 is a block diagram of a dc driving apparatus for an external modulation laser according to the present invention;
fig. 2 is a circuit diagram of a control switch according to the present invention;
fig. 3 is a circuit diagram of a current detection circuit according to the present invention;
fig. 4 is a block diagram of a dc driving system of an external modulation laser according to the present invention;
fig. 5 is a circuit diagram of a dc driving system of an externally modulated laser according to the present invention.
Detailed Description
The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
As shown in fig. 1, the present invention provides a preferred embodiment of a dc driving apparatus for an externally modulated laser.
A dc driving apparatus for an external modulation laser, a negative electrode of the external modulation laser being grounded, preferably, the dc driving system comprises:
a power supply input terminal V;
the control switch 100 is respectively electrically connected with the power input end V and the anode of the external modulation laser 300 and is used for controlling the magnitude of the driving current input into the external modulation laser;
a current detection circuit 200, disposed between the control switch 100 and the external modulation laser 300, for monitoring the driving current;
the control switch 100 controls the magnitude of the driving current of the input external modulation laser according to the monitoring result of the current detection circuit 200.
Specifically, the control switch 100 is connected to the current detection circuit 200, the current detection circuit 200 is configured to monitor the driving current and feed back the driving current to the control switch 100, and further, the control switch 100 adjusts the driving current and controls the driving current to meet the requirement of the external modulation laser.
As shown in fig. 2, the present invention provides a preferred embodiment of the control switch.
Referring to fig. 2, the control switch 100 includes a MOS transistor 110 and a comparator 120 for adjusting a required driving current, wherein an output terminal of the comparator 120 is connected to a G-pole of the MOS transistor 110.
Specifically, in this embodiment, the MOS transistor 110 is a PMOS transistor, which refers to an n-type substrate, a p-channel, and a MOS transistor that carries current by the flow of holes; metal oxide semiconductor field effect (MOS) transistors can be divided into two categories, namely N-channel and P-channel, P-channel silicon MOS field effect transistors have two P + regions on an N-type silicon substrate, which are respectively called a source and a drain, the two electrodes are not conducted, and when sufficient positive voltage is applied to the source (the gate is grounded), the surface of the N-type silicon below the gate presents a P-type inversion layer to become a channel connecting the source and the drain. Changing the gate voltage can change the hole density in the channel, thereby changing the resistance of the channel; such a MOS field effect transistor is called a P-channel enhancement type field effect transistor; if the P-type inversion layer channel exists on the surface of the N-type silicon substrate without adding gate voltage, the resistance of the channel can be increased or reduced by adding proper bias voltage; such MOS field effect transistors are called P-channel depletion type field effect transistors; collectively referred to as PMOS transistors; one of the three pins, generally G, D, S, can be changed to switch between D, S when a control signal is applied between G, S.
Specifically, the S pole of the MOS transistor is connected to the power input terminal V, the G pole thereof is connected to the output terminal of the comparator 120, and the D pole thereof is connected to the current detection circuit 200.
Further, a second capacitor 111 is arranged between the S pole and the G pole of the MOS transistor.
The capacitance value of the second capacitor 111 is 1 uf.
Furthermore, the output end of the comparator 120 is connected to the G pole of the MOS transistor, the non-inverting input end thereof is connected to the current detection circuit 200, and the inverting input end thereof is set for the current required by the LD and serves as a reference of the non-inverting input end, wherein a first capacitor 121 is further connected in series between the inverting input end of the comparator and the output end thereof; and a second resistor 122 is connected in series between the output end of the comparator and the G pole of the MOS tube.
The first capacitor 121 is used as a feedback, mainly for eliminating oscillation, and has a capacitance of 10 pf.
The resistance of the second resistor 122 is 1 k.
Specifically, IN the present embodiment, the comparator 120 employs an AD8605art z-REEL7 chip, which includes five pins IN total, namely a non-inverting input terminal IN +, an inverting input terminal IN-, an output terminal OUT, and a power supply V +, V-.
As shown in fig. 3, the present invention provides a preferred embodiment of the current detection circuit.
Referring to fig. 3, the current detection circuit 200 includes a feedback resistor 210 for feeding back a driving current and a voltage detection unit for detecting a voltage across the feedback resistor 210.
Further, the voltage detection unit includes a detection chip 221, an input end of the detection chip 221 is connected to the feedback resistor 210, and an output end of the detection chip 221 is connected to an input end of the control switch 100, wherein the detection chip 221 detects a voltage across the feedback resistor 210 and feeds the voltage back to the control switch 100, and the control switch 100 controls a driving current of the external modulation laser.
Specifically, IN this embodiment, the detection chip 221 is an INA216A3YFFT chip, and the INA216A3YFFT chip includes four pins, which are a non-inverting input terminal IN +, an inverting input terminal IN-, a ground terminal GND and an output terminal OUT, where the non-inverting input terminal IN + and the inverting input terminal IN-are respectively connected to two ends of the feedback resistor 210, the ground terminal GND is grounded, and the output terminal OUT is connected to the non-inverting input terminal of the control switch 100.
Specifically, the detection chip 221 detects the driving voltage at two ends of the feedback resistor 210 and feeds the driving voltage back to the non-inverting input end of the comparator in the driving switch 100, the non-inverting input end of the comparator is compared with the inverting input end to generate an output signal (that is, the comparator generates the driving current required by the external modulation laser after comparing and adjusting the obtained voltage), and controls the MOS transistor to be turned on, and the dc driving device provides the required driving current for the external modulation laser.
Further, a first resistor 222 is connected in series between the output end of the detection chip 221 and the input end of the control switch 100.
The resistance of the first resistor 222 is 1 k.
Furthermore, a third resistor R for current limiting protection is further disposed between the current detection circuit 200 and the external modulation laser 300, and the third resistor R mainly functions to limit the maximum current flowing through the external modulation laser and plays a role in protection, and since the external modulation laser has a resistor of 5 to 10 Ω, Imax is Vcc/(R +5 to 10), where the value of R is selected only by ensuring that the maximum current is within the working range of the external modulation laser 300.
As shown in FIG. 4, the present invention provides a preferred embodiment of a DC drive system.
Referring to fig. 4, the dc driving system includes the dc driving device a as described above and a power supply 400, where the power supply 400 is connected to an S pole of a MOS transistor to provide a driving current for the dc driving device a.
As shown in fig. 5, the present invention provides an overall circuit diagram of a dc driving system of an external modulation laser.
Wherein, C1 is 1uf, C2 is 100nf, and C3 is 10 uf.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, which is intended to cover all equivalent changes and modifications made within the scope of the present invention.

Claims (10)

1. A dc driving apparatus for an external modulation laser, a negative electrode of the external modulation laser being grounded, the dc driving apparatus comprising:
a power supply input terminal;
the control switch is respectively electrically connected with the power input end and the anode of the external modulation laser and is used for controlling the magnitude of the driving current input into the external modulation laser;
the current detection circuit is arranged between the control switch and the external modulation laser and is used for monitoring the driving current;
the control switch controls the magnitude of the driving current of the input external modulation laser according to the monitoring result of the current detection circuit.
2. The direct-current drive device according to claim 1, characterized in that: the control switch comprises an MOS tube and a comparator used for adjusting the required driving current, and the output end of the comparator is connected with the G pole of the MOS tube.
3. The direct-current drive device according to claim 1, characterized in that: the current detection circuit comprises a feedback resistor for feeding back the driving current and a voltage detection unit for detecting the voltage at two ends of the feedback resistor.
4. The direct current drive device according to claim 3, characterized in that: the voltage detection unit comprises a detection chip, the input end of the detection chip is connected with the feedback resistor, the output end of the detection chip is connected with the input end of the control switch, the detection chip detects the voltage on the feedback resistor and feeds the voltage back to the control switch, and the control switch controls the driving current of the external modulation laser.
5. The direct current drive apparatus according to claim 4, characterized in that: and a first resistor is also connected in series between the output end of the detection chip and the input end of the control switch.
6. The direct-current drive device according to claim 2, characterized in that: and a second resistor is connected in series between the output end of the comparator and the G pole of the MOS tube.
7. The direct-current drive device according to claim 2, characterized in that: a first capacitor is connected in series between the inverting input end of the comparator and the output end of the comparator.
8. The direct-current drive device according to claim 2, characterized in that: and a second capacitor is arranged between the S pole and the G pole of the MOS tube.
9. The direct-current drive device according to claim 1, characterized in that: and a third resistor for current limiting protection is also arranged between the current detection circuit and the external modulation laser.
10. A dc drive system, characterized by: the direct current driving system comprises the direct current driving device according to any one of claims 1 to 9 and a power supply, wherein the power supply is connected with an S pole of the MOS tube and provides a driving current for the direct current driving device.
CN201922013644.5U 2019-11-20 2019-11-20 Direct current driving device and system of external modulation laser Active CN210490081U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201922013644.5U CN210490081U (en) 2019-11-20 2019-11-20 Direct current driving device and system of external modulation laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201922013644.5U CN210490081U (en) 2019-11-20 2019-11-20 Direct current driving device and system of external modulation laser

Publications (1)

Publication Number Publication Date
CN210490081U true CN210490081U (en) 2020-05-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201922013644.5U Active CN210490081U (en) 2019-11-20 2019-11-20 Direct current driving device and system of external modulation laser

Country Status (1)

Country Link
CN (1) CN210490081U (en)

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Address after: 518000 No. 35, Cuijing Road, Pingshan New District, Shenzhen, Guangdong

Patentee after: Ona Technology (Shenzhen) Group Co.,Ltd.

Address before: No.35 Cuijing Road, Pingshan District, Shenzhen City, Guangdong Province

Patentee before: O-NET COMMUNICATIONS (SHENZHEN) Ltd.

CP03 Change of name, title or address