CN210430055U - Artificial surface plasmon integrated dynamic adjustable transmission device based on graphene - Google Patents
Artificial surface plasmon integrated dynamic adjustable transmission device based on graphene Download PDFInfo
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Abstract
The utility model discloses an artifical surface plasmon integration dynamic adjustable transmission device based on graphite alkene belongs to microwave device technical field, including artifical surface plasmon waveguide, set up in artifical surface plasmon waveguide bilateral symmetry and the microstrip line signal conversion transition part that links to each other, microstrip line signal conversion transition part equally divide and do not link to each other with microstrip line signal transmission part; the artificial surface plasmon waveguide is provided with a low-noise power amplification module, and graphene sandwich structures are symmetrically arranged on two sides of the low-noise power amplification module. The utility model discloses the conductivity characteristic and the low noise power amplification chip that utilize electrolyte regulation and control graphite alkene combine together, have realized the decay of artifical surface plasmon, transmission and the integration dynamic regulation and control of enlargeing, and easy plane is integrated, controls under these three kinds of states of decay, transmission and enlargement through the impressed voltage who adjusts graphite alkene, has good application prospect in the device and the circuit that miniaturize, highly integrated and can real-time dynamic regulation and control.
Description
Technical Field
The utility model belongs to the technical field of the microwave device, concretely relates to adjustable transmission device of artifical surface plasmon integration developments based on graphite alkene.
Background
With the rapid development of communication electronic technology in recent years, in order to pursue and realize the functions of small volume and multi-scenario application of communication electronic products, microwave devices are gradually developed towards the direction of miniaturization, high integration and dynamic adjustment, and in order to meet the application requirements and engineering technical requirements, the high integration dynamic adjustable microwave devices have very important significance.
The surface plasmon is a special electromagnetic wave propagating along the interface of metal and medium, and has remarkable field local property and local field enhancement property, so that the unique advantages can be widely applied to microwave bands, and the artificial surface plasmon is generated by the surface plasmon and has wide research and application in the aspects of antennas, wave absorbers, sensors and the like.
The research on the transmission line of the artificial surface plasmon is the key for the application of the surface plasmon in the microwave frequency band, but the application of the transmission line is limited due to the obvious loss characteristic of the artificial surface plasmon, and in recent years, documents propose that the loss compensation is realized by amplifying the artificial surface plasmon, so that the lossless transmission of the artificial surface plasmon can be realized, and even the amplification transmission of the transmission power of the artificial surface plasmon can be realized.
In an electronic communication system, an attenuator is an indispensable part, can buffer impedance change in a circuit, realizes impedance matching of the circuit, and can control the size of signal transmission in the circuit, which is also extremely important for the application of artificial surface plasmons. In recent years, graphene has attracted much attention due to its outstanding electronic and optical properties, and graphene-based attenuators have also been reported in some documents, because the conductivity of graphene can be adjusted by voltage, so that graphene-based attenuators can be realized dynamically and planar integration of microwave devices is facilitated.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: in order to solve the problem that prior art exists, the utility model provides an artifical surface plasmon integration developments adjustable transmission device based on graphite alkene, it has the advantage that structural design is simple, easily plane integration and miniaturization to can change the conductivity of graphite alkene through adjusting external voltage, thereby realize the dynamic regulation and control of the decay of artifical surface plasmon, amplification and transmission.
The technical scheme is as follows: in order to realize the purpose of the utility model, the utility model adopts the following technical scheme:
the graphene-based artificial surface plasmon integrated dynamic adjustable transmission device comprises an artificial surface plasmon waveguide, microstrip line signal conversion transition parts which are symmetrically arranged on two sides of the artificial surface plasmon waveguide and connected with the artificial surface plasmon waveguide, and the microstrip line signal conversion transition parts are respectively connected with the microstrip line signal transmission parts; the artificial surface plasmon waveguide is provided with a low-noise power amplification module, and graphene sandwich structures are symmetrically arranged on two sides of the low-noise power amplification module.
Furthermore, the microstrip line signal transmission part, the microstrip line signal conversion transition part and the artificial surface plasmon waveguide are all of three-layer structures, the middle layers are all dielectric substrates, the top layer and the bottom layer form a double-layer metal strip structure, the metal strip on the top layer is used as a conduction band for signal transmission, and the metal structure on the bottom layer is used as a metal ground.
Furthermore, the microstrip line signal transmission part comprises a metal conduction band with a fixed width, a dielectric substrate and a full-coverage metal ground structure which are sequentially overlapped; the microstrip line signal conversion transition part comprises a metal conduction band dielectric substrate and a transition metal ground structure with linearly reduced width which are sequentially overlapped; the middle layer of the artificial surface plasmon waveguide is a dielectric substrate, and the top layer and the bottom layer are comb-shaped metal copper strips which are in mirror symmetry respectively.
Furthermore, the comb-shaped metal copper strip is formed by a sawtooth structure with the width of 1.2mm and a groove with the width of 0.3mm and the depth of 1.0mm in a periodic arrangement mode; the thickness of the medium substrate is 0.2mm, and the width of the medium substrate is 8 mm; the width of the metal conduction band and the width of the comb-shaped metal copper strip are both 1.4mm, and the thickness of the metal conduction band and the comb-shaped metal copper strip are 0.025 mm; the transition metal ground structure is made of copper materials, and the thickness of the transition metal ground structure is 0.025 mm; the dielectric substrate is made of F4B material with the relative dielectric constant of 2.65, and the metal material is copper.
Furthermore, the low-noise power amplification module comprises a low-noise power amplification chip, a chip bonding pad and a power supply voltage bonding pad, wherein the low-noise power amplification chip is adhered to the chip bonding pad through conductive adhesive, three metalized through holes are formed in the chip bonding pad and penetrate through the medium substrate to be connected to the bottom metal ground, corresponding pins on the chip are bonded to the power supply voltage bonding pad through gold wires, and then bias voltage is connected to the power supply voltage bonding pad.
Furthermore, the power supply voltage bonding pad is made of copper materials, has a distance of 0.2mm with the chip bonding pad, is connected with the positive electrode of the power supply voltage, and is connected to the corresponding pin of the low-noise power amplification chip through a gold wire bonding wire; the length of the power supply voltage pad is 2mm, the width of the power supply voltage pad is 2.5mm,
furthermore, the graphene sandwich structure comprises a layer of diaphragm paper soaked with ionic liquid, polyvinyl chloride layers are symmetrically arranged on the upper surface and the lower surface of the diaphragm paper, single-layer graphene is arranged between the polyvinyl chloride layers and the diaphragm paper, and the single-layer graphene is transferred to the polyvinyl chloride layers.
Further, the thickness of the polyvinyl chloride layer is 0.075mm, and the thickness of the membrane paper is 0.05 mm; the length of graphite alkene sandwich structure be 40mm, the width is 60 mm.
Has the advantages that: compared with the prior art, the utility model discloses an adjustable transmission device of artifical surface plasmon integration developments based on graphite alkene, this integration device utilize the conductivity of voltage control graphite alkene to realize the adjustable function of the developments of the decay of artifical surface plasmon, transmission and amplification, have lower return loss, not only structural design is simple, and easy plane integration is applicable to the miniaturization of microwave device and circuit, highly integrated and the adjustable demand of developments moreover, possesses fine engineering application prospect.
Drawings
FIG. 1 is a cross-sectional view of an integrated dynamically tunable transmission device;
FIG. 2 is a top view of an integrated dynamically adjustable transmission device;
FIG. 3 is a bottom view of the integrated dynamically tunable transmission device;
FIG. 4 is a local view of a low noise power amplification module and an artificial surface plasmon waveguide;
FIG. 5 is a schematic of a graphene sandwich structure;
FIG. 6 is a change curve of S21 with the sheet resistance of graphene at 13GHz of the integrated dynamically tunable transmission device of the embodiment;
FIG. 7 illustrates an embodiment of an integrated dynamically adjustable transmission device S21 parameters;
FIG. 8 illustrates an embodiment of an integrated dynamically adjustable transmission device S11 parameters;
the reference signs are: the device comprises a 1-microstrip line signal transmission part, a 2-microstrip line signal conversion transition part, a 3-artificial surface plasmon waveguide, a 4-graphene sandwich structure, a 5-low noise power amplification module, a 6-metal conduction band, a 7-medium substrate, an 8-comb metal copper strip, a 9-power supply voltage pad, a 10-full-coverage metal ground structure, an 11-transition metal ground structure, a 12-low noise power amplification chip, a 13-chip pad, a 14-sawtooth structure, a 15-groove, 16-single-layer graphene, a 17-polyvinyl chloride layer and 18-diaphragm paper.
Detailed Description
The invention is further described with reference to the drawings and the following description of specific embodiments. It is understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention, and that modifications to various equivalent forms of the present invention will occur to those skilled in the art upon reading the present disclosure and are intended to be included within the scope of the appended claims.
As shown in fig. 1-3, the graphene-based artificial surface plasmon integrated dynamically adjustable transmission device includes an artificial surface plasmon waveguide 3, microstrip line signal conversion transition portions 2 symmetrically disposed on two sides of the artificial surface plasmon waveguide 3 and connected to each other, and the microstrip line signal conversion transition portions 2 are connected to the microstrip line signal transmission portions 1 respectively.
The graphene-based artificial surface plasmon integrated dynamic adjustable transmission device is sequentially and respectively composed of a microstrip line signal transmission part 1, a microstrip line signal conversion transition part 2, an artificial surface plasmon waveguide 3, a microstrip line signal conversion transition part 2 and a microstrip line signal transmission part 1 from left to right, the microstrip line signal transmission part 1 at the input end and the output end is used for transmitting feed-in of signals and extraction of transmission signals, the microstrip line signal conversion transition part 2 is used for realizing mutual conversion between the microstrip line transmission signals and surface plasmon polarized waves, and the artificial surface plasmon waveguide 3 is used for transmitting the surface plasmon polarized waves.
The artificial surface plasmon integrated dynamic adjustable transmission device based on the graphene is composed of three layers, the medium substrate 7 is a middle interlayer, and in order to facilitate integration of the low-noise power amplification chip 12, a structure that a top layer and a bottom layer are double-layer metal strips is adopted, the metal strips on the top layer are used as conduction bands for signal transmission, and the metal structures on the bottom layer are used as metal ground.
The structure of the microstrip line signal transmission part 1 sequentially consists of a metal conduction band 6 with a fixed width, a dielectric substrate 7 and a full-coverage metal ground structure 10 from top to bottom, the structure of the microstrip line signal conversion transition part 2 sequentially consists of the metal conduction band 6, the dielectric substrate 7 and a transition metal ground structure 11 with linearly reduced width from top to bottom, the middle layer of the artificial surface plasmon waveguide 3 is the dielectric substrate 7, and the top layer and the bottom layer are respectively a comb-shaped metal copper strip 8 with mirror symmetry.
As shown in FIG. 4, the comb-shaped metal copper strip 8 is formed by periodically arranging saw-tooth structures 14 with the width of 1.2mm and grooves 15 with the width of 0.3mm and the depth of 1.0 mm.
The low-noise power amplification module 5 is composed of a low-noise power amplification chip 12, a chip bonding pad 13 and a power supply voltage bonding pad 9, wherein the low-noise power amplification chip 12 is adhered to the chip bonding pad 13 through conductive adhesive, three metalized through holes are formed in the chip bonding pad 13 and penetrate through a medium substrate 7 to be connected to a bottom metal ground, corresponding pins on the chip are bonded to the power supply voltage bonding pad 9 through gold wires in order to supply power to the low-noise power amplification chip 12, and then bias voltage is connected to the power supply voltage bonding pad 9.
The transition metal ground structure 11 is made of copper and has a thickness of 0.025 mm. The supply voltage bonding pad 9 is made of copper material, has a distance of 0.2mm from the chip bonding pad 13, is connected with the positive electrode of the supply voltage, and is connected to the corresponding pin of the low-noise power amplification chip 12 through a gold wire bonding wire.
The thickness of the dielectric substrate 7 is 0.2mm, the width is 8mm, the widths of the metal conduction band 6 and the comb-shaped metal copper strip 8 are both 1.4mm, the thickness is 0.025mm, the length of the power supply voltage pad 9 is 2mm, the width of the power supply voltage pad is 2.5mm, the distance between the power supply voltage pad 9 and the chip pad 13 is 0.2mm, the dielectric substrate 7 in the embodiment is made of F4B material with the relative dielectric constant of 2.65, and the metal material is copper.
As shown in fig. 2 and 5, on the left and right sides of the low-noise power amplification module 5, graphene sandwich structures 4 are respectively placed on the artificial surface plasmon waveguide 3 to absorb an electromagnetic field on the artificial surface plasmon waveguide 3, and each graphene sandwich structure 4 is composed of two single-layer graphene layers 16, two polyvinyl chloride layers 17, and one layer of separator paper 18 soaked with ionic liquid. The single-layer graphene 16 is transferred to the polyvinyl chloride layer 17, the thickness of the polyvinyl chloride layer 17 is 0.075mm, the upper and lower single-layer graphene 16 are separated by the diaphragm paper 18, and the thickness of the diaphragm paper 18 is 0.05 mm. The graphene sandwich structure 4 has a length of 40mm and a width of 60 mm.
As shown in fig. 5, by applying a bias voltage between two layers of single-layer graphene, the change of the sheet resistance of the graphene sandwich structure 4 can be controlled by adjusting the magnitude of the bias voltage, and the sheet resistances of different graphene sandwich structures 4 can generate different dissipation amounts for the transmission power of the artificial surface plasmon polariton polarized wave, so that output signals with different power magnitudes can be obtained by adjusting the bias voltage of the graphene sandwich structure 4. Fig. 6 shows that when the operating frequency is 13GHz, the transmission coefficient of the device of the embodiment varies with the sheet resistance of the graphene sandwich structure 4, and when the sheet resistance of the graphene sandwich structure 4 is adjusted from 580ohm/sq to 2500ohm/sq, the transmission coefficient of the integrated dynamically adjustable transmission device can be adjusted from-8 dB to about +15dB, thereby realizing three states of attenuation, transmission and amplification of the artificial surface plasmon polariton polarization wave.
Fig. 7 shows the variation of the transmission coefficient of the device of the embodiment with frequency, and the result shows that as the sheet resistance of the graphene sandwich structure 4 increases, the transmission coefficient also increases, and in the frequency range from 12GHz to 14GHz, when the sheet resistance of the graphene sandwich structure 4 is from 580ohm/sq to 2500ohm/sq, the transmission coefficient of the device can be adjusted in the range from-10 dB to +15 dB.
Fig. 8 shows a change relationship of return loss of the device according to the embodiment with frequency, and the result shows that the change trend of the return loss coefficient is relatively stable with the change of the sheet resistance of the graphene sandwich structure 4, and the return loss coefficients of the device are all lower than-18 dB in the frequency range from 12GHz to 14GHz, so that the artificial surface plasmon integrated dynamically tunable transmission device based on graphene has relatively low return loss.
Claims (8)
1. Artifical surface plasmon integration adjustable transmission device of developments based on graphite alkene, its characterized in that: the microstrip line signal conversion and transition device comprises an artificial surface plasmon waveguide (3), microstrip line signal conversion and transition parts (2) which are symmetrically arranged and connected on two sides of the artificial surface plasmon waveguide (3), wherein the microstrip line signal conversion and transition parts (2) are respectively connected with a microstrip line signal transmission part (1); the artificial surface plasmon waveguide (3) is provided with a low-noise power amplification module (5), and graphene sandwich structures (4) are symmetrically arranged on two sides of the low-noise power amplification module (5).
2. The graphene-based artificial surface plasmon integrated dynamically adjustable transmission device according to claim 1, characterized in that: the microstrip line signal transmission part (1), the microstrip line signal conversion transition part (2) and the artificial surface plasmon waveguide (3) are respectively of a three-layer structure, the middle layer is a dielectric substrate (7), the top layer and the bottom layer form a double-layer metal strip structure, the metal strip on the top layer is used as a conduction band for signal transmission, and the metal structure on the bottom layer is used as a metal ground.
3. The graphene-based artificial surface plasmon integrated dynamically adjustable transmission device according to claim 1, characterized in that: the microstrip line signal transmission part (1) comprises a metal conduction band (6) with a fixed width, a dielectric substrate (7) and a full-coverage metal ground structure (10) which are sequentially overlapped; the microstrip line signal conversion transition part (2) comprises a metal conduction band (6), a dielectric substrate (7) and a transition metal ground structure (11) with linearly reduced width which are sequentially overlapped; the middle layer of the artificial surface plasmon waveguide (3) is a dielectric substrate (7), and the top layer and the bottom layer are comb-shaped metal copper strips (8) which are in mirror symmetry respectively.
4. The graphene-based artificial surface plasmon integrated dynamically adjustable transmission device according to claim 3, characterized in that: the comb-shaped metal copper strip (8) is formed by periodically arranging saw tooth structures (14) with the width of 1.2mm and grooves (15) with the width of 0.3mm and the depth of 1.0 mm; the thickness of the dielectric substrate (7) is 0.2mm, and the width of the dielectric substrate is 8 mm; the width of the metal conduction band (6) and the width of the comb-shaped metal copper strip (8) are both 1.4mm, and the thickness of the metal conduction band and the comb-shaped metal copper strip is 0.025 mm; the transition metal ground structure (11) is made of copper materials, and the thickness of the transition metal ground structure is 0.025 mm; the dielectric substrate (7) is made of F4B material with the relative dielectric constant of 2.65, and the metal material is copper.
5. The graphene-based artificial surface plasmon integrated dynamically adjustable transmission device according to claim 1, characterized in that: the low-noise power amplification module (5) comprises a low-noise power amplification chip (12), a chip bonding pad (13) and a power supply voltage bonding pad (9), wherein the low-noise power amplification chip (12) is adhered to the chip bonding pad (13) through conductive adhesive, three metalized through holes are formed in the chip bonding pad (13) and penetrate through a medium substrate (7) to be connected to a bottom metal ground, corresponding pins on the chip are bonded to the power supply voltage bonding pad (9) through gold wires, and then bias voltage is connected to the power supply voltage bonding pad (9).
6. The graphene-based artificial surface plasmon integrated dynamically adjustable transmission device according to claim 5, characterized in that: the power supply voltage bonding pad (9) is made of copper materials, has a distance of 0.2mm with the chip bonding pad (13), is connected with the positive electrode of the power supply voltage, and is connected to the corresponding pin of the low-noise power amplification chip (12) through a gold wire bonding wire; the length of the power supply voltage bonding pad (9) is 2mm, and the width of the power supply voltage bonding pad is 2.5 mm.
7. The graphene-based artificial surface plasmon integrated dynamically adjustable transmission device according to claim 1, characterized in that: the graphene sandwich structure (4) comprises a layer of diaphragm paper (18) soaked with ionic liquid, polyvinyl chloride layers (17) are symmetrically arranged on the upper surface and the lower surface of the diaphragm paper (18), single-layer graphene (16) is arranged between each polyvinyl chloride layer (17) and the diaphragm paper (18), and the single-layer graphene (16) is transferred to the polyvinyl chloride layers (17).
8. The graphene-based artificial surface plasmon integrated dynamically adjustable transmission device according to claim 7, characterized in that: the thickness of the polyvinyl chloride layer (17) is 0.075mm, and the thickness of the diaphragm paper (18) is 0.05 mm; the graphene sandwich structure (4) is 40mm in length and 60mm in width.
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| CN110729542A (en) * | 2019-09-19 | 2020-01-24 | 东南大学 | Artificial surface plasmon integrated dynamic adjustable transmission device based on graphene |
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