CN210420258U - Organic semiconductor material solvent annealing furnace - Google Patents
Organic semiconductor material solvent annealing furnace Download PDFInfo
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- CN210420258U CN210420258U CN201921192358.3U CN201921192358U CN210420258U CN 210420258 U CN210420258 U CN 210420258U CN 201921192358 U CN201921192358 U CN 201921192358U CN 210420258 U CN210420258 U CN 210420258U
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Abstract
The utility model discloses an organic semiconductor material solvent annealing furnace in the technical field of organic semiconductor material processing. The annealing furnace consists of a solvent annealing furnace sealing cover and a solvent annealing furnace main body. The solvent annealing furnace sealing cover comprises a container sealing layer and a container fixing layer which are connected up and down, a substrate fixing groove is formed in the bottom side of the container fixing layer and used for fixing a sample substrate, the solvent annealing furnace main body is a cube surrounded by four side plates and a bottom plate, and solvent volume scales are marked on the outer surfaces of one or more of the four side plates. The utility model discloses can anneal under solvent atmosphere to the organic semiconductor molecule that uses spin-coating method deposit on the substrate surface, carry out the optimization in the aspect of molecular conformation and arranging to accurate control annealing condition obtains more excellent semiconductor performance. The utility model is simple in operation, safety especially have great commercial value in aspects such as organic semiconductor material laboratory research and development and industrial production.
Description
Technical Field
The utility model belongs to organic semiconductor material processing field especially relates to an organic semiconductor material solvent annealing stove.
Background
The organic semiconductor material has strong functionality and simple processing and preparation, can be widely applied to photoelectric materials, and has wide application in more and more fields. However, the organic semiconductor material film obtained by directly using the spin coating method has poor performance, and further processing optimization is required to obtain more excellent performance, wherein solvent annealing is a low-cost and high-efficiency method. The solvent annealing provides a specific solvent atmosphere for the organic semiconductor material, so that the molecular composition and the element components of organic molecules are changed, the performance of the organic material is adjusted in a large range, and the performance of the organic material meets the requirements of practical application. However, there is no annealing device used for the solvent annealing treatment of organic thin film materials so far, and a simple device lacks of confidence and standard for the annealing degree and the annealing quality, so that the requirements of current research and development and production can not be met. Therefore, in order to solve the above technical problems, a new organic semiconductor solvent annealing furnace specially used for solvent annealing is urgently required.
SUMMERY OF THE UTILITY MODEL
The utility model aims at the not enough of prior art, provide an organic semiconductor material solvent annealing stove, include: the sealing cover of the solvent annealing furnace and the main body of the solvent annealing furnace;
the sealing cover of the solvent annealing furnace comprises a container sealing layer and a container fixing layer which are connected up and down, and a substrate fixing groove is arranged at the bottom side of the container fixing layer;
the circumferential size of the outer side of the container sealing layer is larger than or equal to the circumferential size of the outer side of the main body of the solvent annealing furnace, and the size of the container fixing layer is matched with the inner periphery of the main body of the annealing furnace, so that the sealing effect of the main body of the solvent annealing furnace and the sealing cover of the solvent annealing furnace is achieved;
the solvent annealing furnace main body is a cube surrounded by four side plates and a bottom plate, and the outer surface of one or more of the four side plates is marked with solvent volume scales.
The sample substrate is fixed in the substrate fixing groove and can slide in the substrate fixing groove.
And clamping strips are arranged on two sides of the substrate fixing groove along the sliding direction of the sample substrate so as to fix the sample substrate.
The size of the substrate fixing groove is matched with that of the sample substrate.
The length of the substrate fixing groove is 100mm, 135mm, 200mm or 268mm, and the size of the sample substrate is 3 inches, 4 inches, 6 inches or 8 inches.
The height of the side plate is 30-50 mm, and the thickness of the side plate and the thickness of the bottom plate are both 1.5 mm.
The length of the bottom plate is 120mm, 150mm, 230mm or 270mm, the thickness of the sealing layer of the container is 3mm, and the thickness of the fixing layer of the container is 3-5 mm.
The beneficial effects of the utility model reside in that:
the utility model provides an organic semiconductor material solvent annealing stove, the device can provide solvent atmosphere annealing to the organic semiconductor material of deposit on the basement surface that obtains through the spin-coating method to accurate control annealing condition makes thereby organic semiconductor molecule further structure adjustment and self-assembly obtain more excellent semiconductor electrical properties, is an organic semiconductor material processing preparation and aftertreatment device that has using value. Moreover, the utility model has simple and safe operation, and especially has great commercial value in the aspects of organic semiconductor material laboratory research and development, industrial production and the like.
Drawings
FIG. 1 is a schematic view of a structure of an organic semiconductor material solvent annealing furnace according to the present invention;
FIG. 2 is a front view of a sealing cover of the solvent annealing furnace of the present invention;
FIG. 3 is a bottom view of the sealing cover of the solvent annealing furnace of the present invention;
wherein:
1-sealing cover of solvent annealing furnace, 101-sealing layer of container, 102-fixing layer of container, 103-fixing groove of substrate, 104-clamping strip, 2-main body of solvent annealing furnace;
FIG. 4 is a photomicrograph of a polarization microscope before and after annealing a BTBT-C8 chloroform solution coated on the surface of a silicon wafer by spinning;
FIG. 4a is a polarization microscope photograph of BTBT-C8 before annealing in chloroform;
FIGS. 4b, 4C, 4d and 4e are polarization microscope photographs of nano-crystallites formed on the surface of the silicon wafer substrate after annealing in BTBT-C8 chloroform solution.
Detailed Description
The utility model provides an organic semiconductor material solvent annealing stove, it is right to combine the figure and specific embodiment below the utility model discloses do further detailed description:
as shown in fig. 1, an organic semiconductor material solvent annealing furnace includes: the sealing cover 1 of the solvent annealing furnace and the main body 2 of the solvent annealing furnace are made of polytetrafluoroethylene materials, and the main body 2 of the solvent annealing furnace is made of quartz materials. The sealing cover 1 of the solvent annealing furnace comprises a container sealing layer 101 and a container fixing layer 102 which are connected up and down, wherein a substrate fixing groove 103 is arranged at the bottom side of the container fixing layer 102, as shown in fig. 2 and 3; the outer circumferential dimension of the container sealing layer 101 is larger than or equal to the outer circumferential dimension of the main body 2 of the solvent annealing furnace, and the dimension of the container fixing layer 102 is matched with the inner periphery of the main body 2 of the annealing furnace, so that the sealing effect of the main body 2 of the solvent annealing furnace and the sealing cover 1 of the solvent annealing furnace is achieved, and the purpose is that when a substrate is placed in the substrate fixing groove and the sealing cover of the solvent annealing furnace is covered, the sample substrate can be prevented from falling off in the annealing process; the main body 2 of the solvent annealing furnace is a cube surrounded by four side plates and a bottom plate, and the outer surface of one or more of the four side plates is marked with solvent volume scales, so that the amount of added solvent is conveniently controlled when an experiment is started, and the amount of residual solvent is observed in the experiment process; the sample base is fixed in base fixed slot 103 and can slide in base fixed slot 103, along the sliding direction of the sample base, both sides of base fixed slot 103 all set up card strip 104 to fixed sample base, and reach sealed effect.
Example 1:
as shown in figure 1, the organic semiconductor material solvent annealing furnace has four side plates with the height of 30-50 mm, a bottom plate with the length and width of 120mm and a bottom plate with the thickness of 1.5 mm; the thickness of the container sealing layer 101 is 3mm, and the thickness of the container fixing layer 102 is 3-5 mm.
The method comprises the steps of spin-coating 2, 7-dioctyl [1] benzothiophene [3,2-b ] [1] benzothiophene (BTBT-C8) chloroform solution of 10mg/mL on the surface of a 3-inch substrate silicon wafer, clamping the silicon wafer into a substrate fixing groove 103 with the length of 100mm with the front surface facing downwards as shown in FIG. 4a, adding 5mL chloroform into a main body 2 of a solvent annealing furnace, then covering a container fixing layer 102 of a sealing cover 1 of the solvent annealing furnace into the main body 2 of the annealing furnace, clamping the substrate silicon wafer into the substrate fixing groove 103, preventing the silicon wafer substrate from falling off, carrying out solvent annealing on BTBT-C8 molecules for 4h at room temperature, and forming nano microcrystals with uniform shapes on the surface of the silicon wafer substrate, wherein the polarization microscope photograph is shown in FIG. 4 b.
Example 2:
the organic semiconductor material solvent annealing furnace is characterized in that the heights of four side plates are 30-50 mm, the lengths and the widths of bottom plates are 150mm, and the thicknesses of the four side plates and one bottom plate are 1.5 mm; the thickness of the container sealing layer 101 is 3mm, and the thickness of the container fixing layer 102 is 3-5 mm.
Spin-coating 10mg/mL BTBT-C8 chloroform solution on the surface of a 4-inch substrate silicon wafer, and taking a polarization microscope photograph as shown in FIG. 4a, clamping the silicon wafer into a substrate fixing groove 103 with the length of 135mm with the front side facing downwards, adding 5mL chloroform into a main body 2 of a solvent annealing furnace, then covering a container fixing layer 102 of a sealing cover 1 of the solvent annealing furnace into the main body 2 of the annealing furnace, clamping the substrate silicon wafer into the substrate fixing groove 103, preventing the silicon wafer substrate from dropping, and carrying out solvent annealing on BTBT-C8 molecules for 4h at room temperature to form nano-microcrystals with uniform shapes on the surface of the silicon wafer substrate, wherein the polarization microscope photograph is shown in FIG. 4C.
Example 3:
the organic semiconductor material solvent annealing furnace is characterized in that the heights of four side plates are 30-50 mm, the lengths and the widths of bottom plates are 230mm, and the thicknesses of the four side plates and one bottom plate are 1.5 mm; the thickness of the container sealing layer 101 is 3mm, and the thickness of the container fixing layer 102 is 3-5 mm.
Spin-coating 10mg/mL BTBT-C8 chloroform solution on the surface of a 6-inch substrate silicon wafer, and taking a polarization microscope photo as shown in FIG. 4a, clamping the silicon wafer into a substrate fixing groove 103 with the length of 200mm with the front side facing downwards, adding 5mL chloroform into a main body 2 of a solvent annealing furnace, then covering a container fixing layer 102 of a sealing cover 1 of the solvent annealing furnace into the main body 2 of the annealing furnace, clamping the substrate silicon wafer into the substrate fixing groove 103, preventing the silicon wafer substrate from dropping, and carrying out solvent annealing on BTBT-C8 molecules for 4h at room temperature to form nano-microcrystals with uniform shapes on the surface of the silicon wafer substrate, wherein the polarization microscope photo is shown in FIG. 4 d.
Example 4:
the organic semiconductor material solvent annealing furnace is characterized in that the heights of four side plates are 30-50 mm, the lengths and the widths of bottom plates are 270mm, and the thicknesses of the four side plates and one bottom plate are 1.5 mm; the thickness of the container sealing layer 101 is 3mm, and the thickness of the container fixing layer 102 is 3-5 mm.
Spin-coating 10mg/mL BTBT-C8 chloroform solution on the surface of a 8-inch substrate silicon wafer, and taking a polarization microscope photograph as shown in FIG. 4a, clamping the silicon wafer into a substrate fixing groove 103 with the length of 268mm with the front side facing downwards, adding 5mL chloroform into a main body 2 of a solvent annealing furnace, then covering a container fixing layer 102 of a sealing cover 1 of the solvent annealing furnace into the main body 2 of the annealing furnace, clamping the substrate silicon wafer into the substrate fixing groove 103, preventing the silicon wafer substrate from falling off, and carrying out solvent annealing on BTBT-C8 molecules for 4h at room temperature to form nano-microcrystals with uniform shapes on the surface of the silicon wafer substrate, wherein the polarization microscope photograph is shown in FIG. 4 e.
Claims (7)
1. An organic semiconductor material solvent annealing furnace, characterized in that the annealing furnace comprises: the sealing cover (1) of the solvent annealing furnace comprises a sealing cover (1) of the solvent annealing furnace and a main body (2) of the solvent annealing furnace, wherein the sealing cover (1) of the solvent annealing furnace comprises a container sealing layer (101) and a container fixing layer (102) which are connected up and down, and a substrate fixing groove (103) is formed in the bottom side of the container fixing layer (102);
the outer circumferential dimension of the container sealing layer (101) is larger than or equal to the outer circumferential dimension of the solvent annealing furnace main body (2), and the dimension of the container fixing layer (102) is matched with the inner periphery of the annealing furnace main body (2), so that the sealing effect of the solvent annealing furnace main body (2) and the sealing cover (1) of the solvent annealing furnace is achieved;
the solvent annealing furnace main body (2) is a cube surrounded by four side plates and a bottom plate, and the outer surface of one or more of the four side plates is marked with solvent volume scales.
2. The organic semiconductor material solvent annealing furnace according to claim 1, wherein the sample substrate is fixed in the substrate fixing groove (103) and is slidable in the substrate fixing groove (103).
3. The organic semiconductor material solvent annealing furnace according to claim 2, wherein a clamping strip (104) is provided on both sides of the substrate holding groove (103) along a sliding direction of the sample substrate to hold the sample substrate.
4. The organic semiconductor material solvent annealing furnace according to claim 1, wherein the substrate holding groove (103) is matched in size to the sample substrate.
5. The organic semiconductor material solvent annealing furnace according to claim 4, wherein the substrate fixing groove (103) has a length of 100mm, 135mm, 200mm or 268mm, and the sample substrate has a size of 3 inches, 4 inches, 6 inches or 8 inches.
6. The organic semiconductor material solvent annealing furnace according to claim 1, wherein the side plates are each 30 to 50mm in height, and the side plates and the bottom plate are 1.5mm in thickness.
7. The organic semiconductor material solvent annealing furnace according to claim 1, wherein the length of the bottom plate is 120mm, 150mm, 230mm or 270mm, the thickness of the container sealing layer (101) is 3mm, and the thickness of the container fixing layer (102) is 3-5 mm.
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| CN201921192358.3U CN210420258U (en) | 2019-07-26 | 2019-07-26 | Organic semiconductor material solvent annealing furnace |
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| CN201921192358.3U CN210420258U (en) | 2019-07-26 | 2019-07-26 | Organic semiconductor material solvent annealing furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110438570A (en) * | 2019-07-26 | 2019-11-12 | 有研工程技术研究院有限公司 | A kind of organic semiconducting materials solvent anneal furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110438570A (en) * | 2019-07-26 | 2019-11-12 | 有研工程技术研究院有限公司 | A kind of organic semiconducting materials solvent anneal furnace |
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