CN210403716U - Radio frequency power amplifier module packaging structure and communication base station - Google Patents
Radio frequency power amplifier module packaging structure and communication base station Download PDFInfo
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- CN210403716U CN210403716U CN201921918762.4U CN201921918762U CN210403716U CN 210403716 U CN210403716 U CN 210403716U CN 201921918762 U CN201921918762 U CN 201921918762U CN 210403716 U CN210403716 U CN 210403716U
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- power amplifier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Abstract
The application provides a radio frequency power amplifier module packaging structure and communication base station relates to semiconductor device packaging technology field, through setting up a plurality of gaN radio frequency power amplifier chips at the central pad of plastic envelope lead frame in advance, encapsulates the mode of laminating the housing seal on central pad conductive pad all around, encapsulates gaN radio frequency power amplifier chip. The central bonding pad can play a good role in heat dissipation, the conductive bonding pads which are electrically connected with the GaN radio frequency power amplifier Chip are arranged around the central bonding pad, and the packaging structure belongs to one type of CSP (Chip Scale Package) packaging, so that the whole packaging structure has the effects of small product size, excellent performance, low cost, flexible process, strong compatibility and the like. By adopting the packaging structure, a plurality of GaN radio frequency power amplifier chips can be packaged into a radio frequency power amplifier module so as to be applied to 5G communication.
Description
Technical Field
The application relates to the technical field of semiconductor device packaging, in particular to a radio frequency power amplifier module packaging structure and a communication base station.
Background
At present, the radio frequency power device is mainly manufactured by the following three processes: GaAs (gallium arsenide) processes, Si-based LDMOS (Laterally Diffused Metal Oxide Semiconductor) processes, and GaN (gallium nitride) processes. The GaAs radio frequency power device manufactured by adopting the GaAs process has the defect that the power of the device is lower and is generally lower than 50W. The LDMOS radio frequency power device manufactured by adopting the LDMOS process has the defect that the working frequency is limited, and the highest effective working frequency is below 3 GHz. The GaN radio-frequency power device manufactured by the GaN process makes up the defects of the GaAs radio-frequency power device and the Si-based LDMOS radio-frequency power device, and has high effective working frequency while showing high-frequency performance.
Among various rf power amplifiers, the bandwidth of the Si-based LDMOS rf power amplifier is greatly reduced as the frequency increases, and is only effective in a frequency range not exceeding about 3.5 GHz. The frequency of the GaN radio-frequency power amplifier manufactured by adopting the 0.25 micron GaN process can be 4 times as high as that of a Si-based LDMOS radio-frequency power amplifier, the bandwidth can be increased by 20 percent, the power density can reach 6-8W/mm (the power density of the Si-based LDMOS radio-frequency power amplifier is 1-2W/mm), the fault-free working time can reach 100 ten thousand hours, the GaN radio-frequency power amplifier is more durable, and the comprehensive performance advantage is obvious. With the arrival of 5G (5th generation wireless systems, fifth generation mobile communication technology), the communication frequency band moves to high frequency, the communication base station and the communication device need to support a radio frequency device with high frequency performance, and the advantages of the GaN radio frequency power amplifier gradually become prominent. Compared with a GaAs radio frequency power amplifier, the GaN radio frequency power amplifier has the advantages of mainly wide band gap and thermal conductivity, higher breakdown voltage and capability of meeting higher power requirements. In terms of thermal conductivity, GaN has much higher thermal conductivity than GaAs, which means that power dissipation in the device can be more easily transferred to the surrounding environment, and heat dissipation is better. Based on the above advantages, the GaN radio frequency power amplifier becomes the key for realizing 5G communication.
The packaging of the GaN radio frequency power amplifier is taken as a key technology to directly determine whether the GaN radio frequency power amplifier can realize 5G commercial use, and the packaging needs to solve a series of problems such as high heat dissipation, high sealing performance, signal transmission integrity, packaging process yield, packaging cost, reliability of packaged products, environmental protection requirements of packaging materials and the like. How to package the GaN rf power amplifier becomes a technical problem to be solved by those skilled in the art.
Disclosure of Invention
In order to solve the technical problem, the application provides a radio frequency power amplifier module packaging structure and a communication base station for packaging a GaN radio frequency power amplifier device.
In a first aspect, an embodiment of the present application provides a radio frequency power amplifier module package structure, which includes: pre-plastic packaging the lead frame, the GaN radio frequency power amplifier chip and the cover;
the pre-plastic-package lead frame comprises a lead frame and a plastic package material, the lead frame comprises a central bonding pad and a plurality of conductive bonding pads arranged around the central bonding pad, and the plastic package material is filled in gaps between the central bonding pad and the conductive bonding pads;
the GaN radio frequency power amplifier chip is arranged on the central bonding pad and is electrically connected with the conductive bonding pad through a lead;
the housing including the cover top and with four lateral walls of joint all around of cover top, the sealed laminating of terminal surface of lateral wall is in on the central authorities pad conductive pad all around, the housing with mould in advance and seal the lead frame and form the cavity, just the housing not with the lead wire contact.
The Package is pin-free Package, the central bonding pad can play a good radiating role, meanwhile, the conductive bonding pads which are electrically connected with the GaN radio frequency power amplifier Chip are arranged around the central bonding pad, and the Package belongs to one type of CSP (Chip Scale Package) Package, so that the whole Package structure has the effects of small product size, excellent performance, low cost, flexible process, strong compatibility and the like.
Optionally, in one possible implementation of an embodiment of the present application, the conductive pads include a non-independent conductive pad connected to a central pad and an independent conductive pad not connected to the central pad, wherein each edge of the central pad is connected to at least two non-independent conductive pads.
Optionally, in a possible implementation manner of the embodiment of the present application, four corners of the central pad are respectively connected to at least one non-independent conductive pad.
Optionally, in a possible implementation manner of the embodiment of the present application, a vent hole is provided on a top of the cover, and epoxy glue is filled in the vent hole.
Optionally, in a possible implementation manner of the embodiment of the present application, the GaN radio frequency power amplifier chip is bonded on the central pad through a conductive adhesive, and a thermal conductivity of the conductive adhesive is not lower than 200W/m.k.
Optionally, in a possible implementation manner of the embodiment of the present application, the end surface of the side wall of the cover is attached to the conductive pad around the central pad in a sealing manner by a cover adhesive, and the cover adhesive is a non-conductive waterproof adhesive.
Optionally, in a possible implementation manner of the embodiment of the present application, the material of the cover is a thermoplastic liquid crystal high polymer material that is resistant to a high temperature of 350 ℃ or higher.
Optionally, in a possible implementation manner of the embodiment of the present application, a protective film is further disposed on a surface of the GaN radio frequency power amplifier chip.
Optionally, in a possible implementation manner of the embodiment of the present application, the central pad and the conductive pads are made of copper.
In a second aspect, an embodiment of the present application further provides a communication base station, where the communication base station includes the radio frequency power amplifier module package structure of the first aspect, and the communication base station establishes data communication with a communication terminal through a GaN radio frequency power amplifier chip in the radio frequency power amplifier module package structure.
The radio frequency power amplifier module packaging structure and the communication base station that this application embodiment provided through with GaN radio frequency power amplifier chip setting at the central pad of plastic envelope lead frame in advance, with the sealed mode of laminating on the electrically conductive pad around central pad of housing, encapsulate GaN radio frequency power amplifier chip. The Package is pin-free Package, meanwhile, the central bonding pad can play a good radiating role, the conductive bonding pads which are electrically connected with the GaN radio frequency power amplifier chip are arranged around the central bonding pad, the Chip Scale Package (CSP) belongs to one kind of CSP (chip scale Package), and the whole Package structure has the effects of small product size, excellent performance, low cost, flexible process, strong compatibility and the like. The GaN radio frequency power amplifier chips are packaged into the radio frequency power amplifier module by adopting the packaging structure, so that the GaN radio frequency power amplifier chips are applied to 5G communication.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic view of a radio frequency power amplifier module package structure provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a lead frame according to an embodiment of the present disclosure;
FIG. 3 is an enlarged schematic view of selected areas of FIG. 2;
fig. 4 is a schematic flow chart illustrating a process of manufacturing a radio frequency power amplifier module package structure according to an embodiment of the present application;
fig. 5-10 are schematic diagrams illustrating a manufacturing process of the rf power amplifier module package structure according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present application, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. are used for indicating the orientation or positional relationship based on the orientation or positional relationship shown in the drawings or the orientation or positional relationship which the present invention product is usually put into use, it is only for convenience of describing the present application and simplifying the description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation and be operated, and thus, should not be construed as limiting the present application.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
First embodiment
Referring to fig. 1, fig. 1 is a schematic view of a radio frequency power amplifier module package structure provided in an embodiment of the present application, where the radio frequency power amplifier module package structure includes a pre-plastic-encapsulated lead frame, a GaN radio frequency power amplifier chip 12, and a cover 15. The pre-plastic package lead frame comprises a lead frame 11 and a plastic package material 13, wherein the lead frame 11 comprises a central bonding pad 111 and a plurality of conductive bonding pads 112 arranged on the periphery of the central bonding pad. The molding compound 13 is filled in the gap between the central pad 111 and the conductive pads 112.
In the embodiment of the present application, the plurality of GaN rf power amplifier chips 12 are disposed on the central bonding pad 111, and meanwhile, the plurality of GaN rf power amplifier chips 12 are electrically connected to the central bonding pad 111 through the lead 14, and the GaN rf power amplifier chips 12 are also electrically connected to each other through the lead 14.
The cover 15 may include a cover top and four sidewalls joined to the periphery of the cover top, end faces of the sidewalls are hermetically attached to the conductive pads 112 around the central pad 111, the cover 15 and the pre-molded lead frame form a cavity for accommodating the GaN rf power amplifier chip 12 and the leads 14, and the cover 15 does not contact the leads 14. Specifically, the distance from the top of the cover 15 to the surface of the pre-molded lead frame is greater than the lead arc height of the leads 14 protruding relative to the surface of the pre-molded lead frame.
The GaN radio frequency power amplifier chip 12 has the characteristic of high temperature resistance, the junction temperature of the GaN radio frequency power amplifier chip 12 during working can reach 225 ℃, and in order to ensure that the packaging structure has good heat dissipation performance, the heat conductivity of any process material in the packaging structure needs to be considered.
For example, the central bonding pad 111, which is used as a part of the rf power amplifier module package structure mainly for heat dissipation, may be made of copper with good thermal conductivity, where the thermal conductivity of copper is 401W/m.k. The main material of the whole lead frame 11 is metallic copper, and the content of the metallic copper can reach 95%.
Referring to fig. 2, the conductive pads 112 include non-independent conductive pads 1121 connected to the central pad 111 and independent conductive pads 1122 not connected to the central pad 111. In the embodiment of the present application, each side of the central pad 111 is connected to at least two non-independent conductive pads 1121, wherein the central pad 111 is connected to the non-independent conductive pads 1121 through a connection bar 106.
Further, in the embodiment of the present application, the four corners of the central pad 111 may be connected to at least one of the non-independent conductive pads 1121, respectively, for example, as shown in fig. 2, the four corners of the central pad 111 are connected to two of the non-independent conductive pads 1121.
The pre-molded lead frame provided with the non-independent conductive pads 1121 is used as a package substrate, the pre-molded lead frame is filled with a molding compound before the GaN radio frequency power amplifier chip 12 is arranged on the central pad 111, and gaps 108 between the central pad 111 and the conductive pads 112 are filled with the molding compound 13. The pre-plastic packaging lead frame in the embodiment can be suitable for large-size multi-pin packaging, and even if the thickness of the pre-plastic packaging lead frame is as thin as 0.2mm-0.25mm in the subsequent packaging process, the problems of warping, deformation, cracking and other process procedures can not be generated.
Referring to fig. 3, the lead frame 11 of the pre-molded lead frame will be described, wherein the lead frame 11 includes an upper surface and an opposite lower surface, and different filling patterns in fig. 3 represent different thickness configurations, wherein the honeycomb pattern region represents that the entire thickness of the lead frame 11 from the upper surface to the lower surface is a metal layer, and the honeycomb pattern region includes a central pad 111, a partial region of the independent conductive pad 1122, and a partial region of the non-independent conductive pad 1121. The dot pattern regions represent half-etching (the lower surface portion is etched away) from the lower surface to the upper surface, and the upper half portion is a metal layer, wherein the dot pattern regions correspond to the connection bars 106. The diagonal lattice pattern region represents a region where half etching is performed from the upper surface to the lower surface, the lower half portion is a metal layer, the diagonal lattice pattern region corresponds to a region of the independent conductive pad 1122 on a side away from the central pad 111, and a region of the dependent conductive pad 1121 on a side away from the central pad 111.
In the embodiment of the present application, the non-independent conductive pads 1121 are partially connected to the central pad 111 to form a more stable structure, which has a good function of resisting mechanical external force, and can avoid warpage during the filling of the molding compound, and at the same time, avoid the fracture of the lead frame 11 caused by an excessively large size and an excessively thin thickness in the subsequent packaging operation. When a molding compound filling process is performed, the gaps in the middle of the lead frame 11 are completely filled with the molding compound, and the half-etched regions are also filled with the molding compound.
Further, in the present embodiment, a vent hole 151 (fig. 9) is further provided on the top of the cover 15, and the vent hole 151 is filled with an epoxy resin adhesive 152. Specifically, the vent hole 151 is filled with an epoxy resin adhesive after the cover 15 is adhered to the conductive pad 112 around the central pad 111 and is baked and cured, and then the epoxy resin adhesive 152 is cured in the vent hole 151 after the filling.
Further, in the embodiment of the present application, a plurality of GaN rf power amplifier chips 12 may be bonded to the central pad 111 by a conductive adhesive, wherein the thermal conductivity of the conductive adhesive is at least 200W/m.k (the thermal conductivity of the epoxy adhesive used in the chip adhesive that is common in the art is 2-4W/m.k). So that the GaN rf power amplifier chip 12 conducts heat to the central bonding pad 111 through the conductive adhesive, thereby realizing heat dissipation.
Further, in the embodiment of the present application, the end surface of the side wall of the cover 15 is sealed and attached to the conductive pad 112 around the central pad by a cover adhesive, and the cover adhesive is a non-conductive waterproof adhesive, and has excellent waterproof property and high sealing property.
Further, in the embodiment of the present application, the cap 15 is made of a thermoplastic liquid crystal high molecular polymer material, and the cap made of the thermoplastic liquid crystal high molecular polymer material can withstand a high temperature of 350 ℃.
Further, in the embodiment of the present application, a protective film is disposed on the surface of the GaN rf power amplifier chip 12, specifically, the protective film may be formed on the surface of the GaN rf power amplifier chip 12 in a sputtering manner, and the protective film disposed on the surface of the GaN rf power amplifier chip 12 may protect the GaN rf power amplifier chip 12 and the lead 14 connected to the GaN rf power amplifier chip 12 when the environment changes.
The central bonding pad can play a good heat dissipation role, the conductive bonding pads which are electrically connected with the GaN radio frequency power amplifier Chip are arranged around the central bonding pad, the Chip Scale Package (CSP) packaging is one type, and the whole packaging structure has the effects of small product size, excellent performance, low cost, flexible process, strong compatibility and the like. The GaN radio frequency power amplifier chips are packaged into the radio frequency power amplifier module by adopting the packaging structure, so that the GaN radio frequency power amplifier chips are applied to 5G communication.
Second embodiment
The embodiment of the present application provides a method for manufacturing a radio frequency power amplifier module package structure, which is used for manufacturing the radio frequency power amplifier module package structure in the first embodiment, please refer to fig. 4, where fig. 4 shows a schematic flow chart of the method for manufacturing the radio frequency power amplifier module package structure in the first embodiment, and the specific flow chart is as follows:
step S1, a pre-molded lead frame is provided.
Referring to fig. 1 and 5, the pre-plastic lead frame includes a lead frame 11 and a plastic package 13, the lead frame 11 includes a central pad 111 and a conductive pad 121 disposed around the central pad, and the plastic package 13 is filled in a gap between the central pad and the conductive pad. The conductive pads 121 include an independent conductive pad 1212 not connected to the central pad 111 and an independent conductive pad 1211 connected to the central pad. At least two non-independent conductive pads 1211 and a plurality of independent conductive pads 1212 are included on each side of the center pad 111. Between two adjacent lead frames is a dicing street 16 (see fig. 2 and 5).
Step S2, attaching the GaN rf power amplifier chip 12 to the central bonding pad 111 of the pre-molded lead frame.
Referring to fig. 6, firstly, an adhesive (epoxy resin) is attached to the central pad 111, and then, a plurality of GaN rf power amplifier chips 12 are sequentially attached to the adhesive. Then, heat curing treatment was performed under the conditions of a heating temperature of 175 ℃ and a heating time of 2 hours. The adhesive is epoxy resin adhesive with electric conductivity and thermal conductivity of at least 280W/m.k.
Step S3, the GaN rf power amplifier chip 12 is connected to the conductive pad through the lead 14.
Referring to fig. 7, the plasma cleaning is used to remove the smudged impurities on the micro bonding pad and the conductive bonding pad of the GaN rf power amplifier chip 12, and then the bonding of the lead 14 is performed, so that the micro bonding pad on the GaN rf power amplifier chip 12 is electrically connected to the conductive bonding pad 112, and the bonding of the lead 14 is performed between different GaN rf power amplifier chips 12.
Step S4, the cover 15 is attached to the lead frame of the pre-molded lead frame.
The cover 15 is made of thermoplastic liquid crystal high polymer material and can resist the high temperature of 350 ℃. The epoxy resin adhesive for adhering the cover 15 is a non-conductive adhesive. The cover 15 has a cover top and four sidewalls respectively joined to the cover top, and the cover top and the four sidewalls form a cavity. The cover top can be provided with a vent hole.
Referring to fig. 8, the cover 15 is adhered to the peripheral conductive pads 112 of the lead frame unit by epoxy resin, and then the end surfaces of the four side walls of the cover 15 are correspondingly adhered to the peripheral conductive pads 112 of the lead frame unit. The thickness of the cap is 0.3-0.5mm, and the cap 15 does not contact with the lead 14. Specifically, the distance from the top of the cover 15 to the surface of the pre-molded lead frame is greater than the height of the leads 14 protruding from the surface of the pre-molded lead frame.
The cover top may be provided with a vent 151 to facilitate the circulation of hot air during the baking and curing process after the cover attaching process. After pasting, baking and curing were carried out (150 ℃ C., 1.5 hours). After baking and curing, the vent holes are filled with epoxy glue 152, and baking and curing are also required (150 ℃, 1.5 hours), as shown in fig. 9.
And step S5, cutting the lead frame to obtain the radio frequency power amplifier module packaging structure.
Referring to fig. 10, the lead frame is cut along the cutting street 16, so that two adjacent packages are separated from each other to form an individual rf power amplifier module package structure.
In this embodiment of the application, before step S4, the manufacturing method may further include:
and arranging a protective film on the surface of the GaN radio frequency power amplifier chip 12, specifically, the protective film is in a liquid state in an initial state, the forming process is sputtering, and a layer of protective film is formed on the surface of the protective film, so that the protective film plays a role in protecting the chip and the lead in the cavity when the environment changes.
Third embodiment
The embodiment of the present application further provides a communication base station, which includes the radio frequency power amplifier module package structure described in the first embodiment. And the communication base station establishes data communication with the communication terminal through the GaN radio frequency power amplifier chip in the radio frequency power amplifier module packaging structure. Preferably, the communication base station is a 5G communication base station.
To sum up, the radio frequency power amplifier module packaging structure and the communication base station provided by the embodiment of the application. The GaN radio frequency power amplifier chip is packaged in a mode that the GaN radio frequency power amplifier chip is arranged on a central bonding pad of a pre-plastic-sealed lead frame, and a cover is attached to conductive bonding pads on the periphery of the central bonding pad in a sealing mode. The central bonding pad can play a good role in heat dissipation, the conductive bonding pads which are electrically connected with the GaN radio frequency power amplifier Chip are arranged around the central bonding pad, and the packaging structure belongs to one type of CSP (Chip Scale Package) packaging, so that the whole packaging structure has the effects of small product size, excellent performance, low cost, flexible process, strong compatibility and the like. By adopting the packaging structure, a plurality of GaN radio frequency power amplifier chips can be packaged into a radio frequency power amplifier module so as to be applied to 5G communication.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A radio frequency power amplifier module packaging structure is characterized by comprising a pre-plastic packaging lead frame, a GaN radio frequency power amplifier chip and a cover;
the pre-plastic-package lead frame comprises a lead frame and a plastic package material, the lead frame comprises a central bonding pad and a plurality of conductive bonding pads arranged around the central bonding pad, and the plastic package material is filled in gaps between the central bonding pad and the conductive bonding pads;
the GaN radio frequency power amplifier chip is arranged on the central bonding pad and is electrically connected with the conductive bonding pad through a lead;
the housing including the cover top and with four lateral walls of joint all around of cover top, the sealed laminating of terminal surface of lateral wall is in on the central authorities pad conductive pad all around, the housing with mould in advance and seal the lead frame and form the cavity, just the housing not with the lead wire contact.
2. The radio frequency power amplifier module package structure of claim 1, wherein the conductive pads comprise a non-independent conductive pad connected to a center pad and an independent conductive pad not connected to a center pad, wherein each side of the center pad is connected to at least two non-independent conductive pads.
3. The radio frequency power amplifier module package of claim 2, wherein four corners of the central pad are connected to at least one non-independent conductive pad, respectively.
4. The packaging structure of any one of claims 1 to 3, wherein a vent hole is formed in the top of the cover, and epoxy resin glue is filled in the vent hole.
5. The radio frequency power amplifier module package structure of any one of claims 1-3, wherein the GaN radio frequency power amplifier chip is bonded on the central bonding pad through a conductive adhesive, and the thermal conductivity of the conductive adhesive is not lower than 200W/m.k.
6. The packaging structure of the radio frequency power amplifier module as claimed in any one of claims 1 to 3, wherein the end face of the side wall of the cover is in sealing fit with the conductive pads around the central pad through a cover adhesive, and the cover adhesive is a non-conductive waterproof adhesive.
7. The packaging structure of any one of claims 1-3, wherein the cover is made of a thermoplastic liquid crystal high polymer material resistant to a high temperature of 350 ℃ or higher.
8. The packaging structure of the radio frequency power amplifier module as claimed in any one of claims 1-3, wherein the surface of the GaN radio frequency power amplifier chip is further provided with a protective film.
9. The packaging structure of the RF power amplifier module according to any one of claims 1-3, wherein the central bonding pad and the plurality of conductive bonding pads are made of copper.
10. A communication base station, characterized in that, the communication base station includes the radio frequency power amplifier module packaging structure of any one of claims 1 to 9, the communication base station establishes data communication with a communication terminal through a GaN radio frequency power amplifier chip in the radio frequency power amplifier module packaging structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921918762.4U CN210403716U (en) | 2019-11-08 | 2019-11-08 | Radio frequency power amplifier module packaging structure and communication base station |
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| CN201921918762.4U CN210403716U (en) | 2019-11-08 | 2019-11-08 | Radio frequency power amplifier module packaging structure and communication base station |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863782A (en) * | 2020-07-29 | 2020-10-30 | 济南南知信息科技有限公司 | Communication module and method for manufacturing the same |
| WO2022036547A1 (en) * | 2020-08-18 | 2022-02-24 | 华为技术有限公司 | Power amplifier chip and communication device |
-
2019
- 2019-11-08 CN CN201921918762.4U patent/CN210403716U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111863782A (en) * | 2020-07-29 | 2020-10-30 | 济南南知信息科技有限公司 | Communication module and method for manufacturing the same |
| WO2022036547A1 (en) * | 2020-08-18 | 2022-02-24 | 华为技术有限公司 | Power amplifier chip and communication device |
| CN117014027A (en) * | 2020-08-18 | 2023-11-07 | 华为技术有限公司 | Power amplifier chip and communication device |
| CN117014027B (en) * | 2020-08-18 | 2024-04-12 | 华为技术有限公司 | Power amplifier chip and communication device |
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