CN210376959U - Light path structure of semiconductor optical fiber amplifier - Google Patents
Light path structure of semiconductor optical fiber amplifier Download PDFInfo
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- CN210376959U CN210376959U CN201921525663.XU CN201921525663U CN210376959U CN 210376959 U CN210376959 U CN 210376959U CN 201921525663 U CN201921525663 U CN 201921525663U CN 210376959 U CN210376959 U CN 210376959U
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Abstract
The utility model relates to an optical communication technical field, concretely relates to semiconductor fiber amplifier's light path structure, the light path structure includes: the optical amplifier comprises an input optical splitter, an input multiplexer, an input isolator, a semiconductor optical amplifier, an output isolator, an output multiplexer, an output optical splitter, an auxiliary light source and an auxiliary input optical splitter; the input end of the input optical splitter is an optical signal input end, and the main output end of the input optical splitter is connected with the first signal end of the input multiplexer; the auxiliary light source is connected with the input end of the auxiliary input optical splitter, and the main output end of the auxiliary input optical splitter is connected with the second signal end of the input combiner; the common end of the input combiner is connected with the input end of the semiconductor optical amplifier through the input isolator, the output end of the conductor optical amplifier is connected with the common end of the output combiner through the output isolator, the first signal end of the output combiner is connected with the input end of the output optical splitter, and the main output end of the optical splitter is an optical signal output end.
Description
Technical Field
The utility model relates to an optical communication technical field, concretely relates to semiconductor fiber amplifier's light path structure.
Background
At present, Optical amplifiers widely applied to transmission systems mainly include raman Optical fiber amplifiers, doped Optical fiber amplifiers and Semiconductor Optical Amplifiers (SOA). The Raman fiber amplifier has large power consumption and extremely high cost. Fiber amplifiers doped with other than erbium have not been used so far after many years of research. Compared with other amplifiers, the SOA has the advantages of gain generated by direct electric injection, small volume, low power consumption, convenience in monolithic integration with other semiconductor optoelectronic devices and the like. The semiconductor optical amplifier is used for a communication transmission network mainly comprising a short-distance and small-capacity metropolitan access network, the number of related channels is limited, transmission tracking generally does not exceed 20km, and the requirement on saturated output optical power is not high. Within the short tracking, one SOA can be competent, and accumulation of noise caused by cascade connection of a plurality of SOAs amplified step by step can be avoided.
When the transmission signal is a stable signal, the SOA control method can realize automatic gain control by inputting and outputting the photodiode (conventional control method). When the transmission signal is a burst or pulse signal, although the input and output photodiodes can detect the signal power, the feedback control is slow, and the problems of automatic gain control or inaccurate gain control, optical surge and the like cannot be realized in time. When the traditional SOA is used for burst signals, when input optical power is in a small-signal linear amplification area, the SOA can adopt a constant current control mode, constant current is constant gain at the moment, but factors such as environment, temperature and SOA aging influence can cause SOA efficiency change, namely, the constant current is constant current, but the constant gain cannot be ensured. When the SOA operates outside the small signal linear amplification region, the gain difference at constant current is large due to saturation effects. Therefore, how to further ensure constant gain and how to weaken the influence of the saturation region under the burst signal becomes an urgent technical problem to be solved.
Disclosure of Invention
In order to solve the problems existing in the prior art, the utility model provides a semiconductor optical fiber amplifier's light path structure.
According to the utility model provides a technical scheme, a semiconductor fiber amplifier's light path structure, the light path structure includes: the optical amplifier comprises an input optical splitter, an input multiplexer, an input isolator, a semiconductor optical amplifier, an output isolator, an output multiplexer, an output optical splitter, an auxiliary light source and an auxiliary input optical splitter;
the input end of the input optical splitter is an optical signal input end, and the main output end of the input optical splitter is connected with the first signal end of the input multiplexer;
the auxiliary light source is connected with the input end of the auxiliary input optical splitter, and the main output end of the auxiliary input optical splitter is connected with the second signal end of the input combiner;
the common end of the input combiner is connected with the input end of the semiconductor optical amplifier through the input isolator, the output end of the conductor optical amplifier is connected with the common end of the output combiner through the output isolator, the first signal end of the output combiner is connected with the input end of the output optical splitter, and the main output end of the optical splitter is an optical signal output end.
Further, the secondary output end of the input optical splitter is connected with a first photodiode; the secondary output end of the auxiliary input optical splitter is connected with a second photodiode; and the secondary output end of the output optical splitter is connected with the third photodiode.
Further, a second signal end of the output combiner is connected to an input end of the auxiliary output optical splitter, and a secondary output end of the auxiliary output optical splitter is an optical signal secondary output end.
Further, a second signal end of the output combiner is connected with the input end of the auxiliary output optical splitter through a second band-pass filter.
Further, the main output end of the auxiliary output optical splitter is connected with a fourth photodiode.
Further, the auxiliary light source is connected with the input end of the auxiliary input optical splitter through a first band-pass filter.
From the foregoing, it can be seen that the utility model provides a semiconductor optical amplifier light path structure compares with prior art and possesses following advantage: the utility model discloses a light path simple structure realizes the convenience. Can be used for stable signal amplification, and also can be used for amplification of unstable signals (rapidly changing signals including burst or pulse). The effects of environmental, temperature, aging, etc. factors may be reduced or eliminated. The influence of the saturation region can be weakened, and when the burst signal changes in the linear region and the saturation region, the gain can be kept unchanged.
Drawings
Fig. 1 is a schematic diagram of an SOA optical path structure.
Fig. 2, fig. 3 and fig. 4 are schematic diagrams of the SOA optical path structure after improvement.
1-1, a first optical splitter, 1-2, a second optical splitter, 1-3, a third optical splitter, 1-4, auxiliary output optical splitting, 2-1, a first band pass filter, 2-2, a second band pass filter, 3-1, a first multiplexer, 3-2, a second multiplexer, 4-1, a first isolator, 4-2, a second isolator, 5, a semiconductor amplifier, 6-1, a first photodiode, 6-2, a second photodiode, 6-3, a third photodiode, 6-4, a fourth photodiode, and 7, an auxiliary light source.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in detail with reference to the accompanying drawings and embodiments.
As a first embodiment of the present invention:
as shown in fig. 1, the optical path structure includes: the device comprises an input optical splitter 1-1, an input multiplexer 3-1, an input isolator 4-1, a semiconductor optical amplifier 5, an output isolator 4-2, an output multiplexer 3-2, an output optical splitter 1-3, an auxiliary light source 7, a first band-pass filter 2-1, a second band-pass filter 2-2 and an auxiliary input optical splitter 1-2;
the input end of the input optical splitter 1-1 is an optical signal input end, an optical signal is input from the optical signal input end, the main output end of the input optical splitter 1-1 is connected with the first signal end of the input multiplexer 3-1, and the secondary output end of the input optical splitter 1-1 is connected with the first photodiode 6-1;
the auxiliary light source 7 is connected with the input end of the auxiliary input optical splitter 1-2 through the first band-pass filter 2-1, the main output end of the auxiliary input optical splitter 1-2 is connected with the second signal end of the input combiner 3-1, and the secondary output end of the auxiliary input optical splitter 1-2 is connected with the second photodiode 6-2;
the common end of the input combiner 3-1 is connected with the input end of a semiconductor optical amplifier 5 through an input isolator 4-1, the output end of the semiconductor optical amplifier 5 is connected with the common end of an output combiner 3-2 through an output isolator 4-2, the first signal end of the output combiner 3-2 is connected with the input end of an output optical splitter 1-3, the main output end of the optical splitter 1-3 is an optical signal output end, and the secondary output end of the optical splitter 1-3 is connected with a third photodiode 6-3; and the second signal end of the output combiner 3-2 is connected with the input end of the second band-pass filter 2-2, and the output end of the second band-pass filter 2-2 is connected with the fourth photodiode 6-4.
When the auxiliary light source 7 is an ASE light source, the input optical signal is a burst signal or a pulse signal, and when the interval of the burst signal or the pulse signal reaches the microsecond or nanosecond level, the power of the burst signal or the pulse signal can be detected, but the detected power cannot be used for feedback control because the signal changes too fast. If the gains of the semiconductor optical amplifier 5 for the input optical signal and the auxiliary signal (generated by the auxiliary light source 7) are respectively G (lambda)a) And G (lambda)b) Define offset = G (λ)a)-G(λb) The offset is a fixed value. Therefore, the signal can be indirectly subjected to feedback control through the auxiliary light source, and the influence of factors such as environment, temperature, SOA aging and the like can be eliminated, and the influence of a saturation region can be weakened.
It is understood that the gain control of the transmission signal is indirectly achieved through the second photodiode 6-2 and the fourth photodiode 6-4. The control method is simple and familiar to those skilled in the art, and is only briefly described below.
The reported powers of the second photodiode 6-2 and the fourth photodiode 6-4 are respectively P2 and P4
The first step is as follows: calibration of the first photodiode 6-1 and the third photodiode 6-3: an input optical signal is connected into an optical path, the current value of the semiconductor optical amplifier 5 is adjusted, and the first photodiode 6-1 and the third photodiode 6-3 are directly calibrated according to the input optical signal.
The second step is that: calibration of the second photodiode 6-2: the second photodiode 6-2 is preceded by a first band-pass filter 2-1, in which case only lambda is allowedbA wavelength of +/-0.2nm, said lambdabIs the wavelength of the auxiliary signal; it is therefore necessary to use a central wavelength of λbThe narrow linewidth light source of (a) performs the second photodiode 6-2 calibration. Specifically, the auxiliary signal is not connected into the optical path, the output end of the band-pass filter 2-1 is connected with the central wavelength of lambdabTo calibrate the second photodiode 6-2.
The third step: the auxiliary signal is connected into the optical path, the power of the auxiliary signal is adjusted, the reported power of the second photodiode 6-2 is read, when the reported power is in a small value of a small signal linear region (the power of an auxiliary light source is generally 2-3 dB less than that of signal light (burst), so that the influence on the signal light is small, the specific size of the auxiliary light can be actually measured, the accuracy of the signal light control is not influenced), the auxiliary signal can be considered to be adjusted in place, and then the auxiliary signal can be kept at constant current or constant power.
The fourth step: adjusting lambdaaThe input optical power of the optical amplifier is a typical value, the current of the semiconductor optical amplifier 5 is adjusted, the optical spectrum analyzer is used for scanning, and when the scanned gain reaches a required value G, the gain control of the semiconductor optical amplifier 5 is in place. As the auxiliary signal passes through the first band-pass filter 2-1 and the second band-pass filter 2-2, the bandwidth of the auxiliary signal is less than 0.4nm, and the ASE power generated by the auxiliary signal after being amplified by the semiconductor optical amplifier 5 can be directly ignored. At this time, the photodiode 6-4 is calibrated to report the power P4=P2+ G(λb)=P1+ G(λa)- offset。
Since the offset is a fixed value, the offset can be set to zero, that is, the offset is assumed to be 0, that is, the reported power P4= P2+ G (λ b) = P1+ G (λ a) of the photodiode 6-4.
The fifth step: the gain G (λ a) of the input optical signal can be controlled by the auxiliary signal, and the gain G (λ a) of the input optical signal is equal to the gain G (λ b) of the auxiliary signal, i.e., G (λ a) = G (λ b) = P4-P2, where P4 and P2 are detection reporting values of the second photodiode 6-2 and the fourth photodiode 6-4, respectively.
As a second embodiment of the present invention:
as shown in fig. 2, the optical path structure includes: the device comprises an input optical splitter 1-1, an input multiplexer 3-1, an input isolator 4-1, a semiconductor optical amplifier 5, an output isolator 4-2, an output multiplexer 3-2, an output optical splitter 1-3, an auxiliary light source 7, a first band-pass filter 2-1, a second band-pass filter 2-2, an auxiliary input optical splitter 1-2 and an auxiliary output optical splitter 1-4;
the input end of the input optical splitter 1-1 is an optical signal input end, an optical signal is input from the optical signal input end, the main output end of the input optical splitter 1-1 is connected with the first signal end of the input multiplexer 3-1, and the secondary output end of the input optical splitter 1-1 is connected with the first photodiode 6-1;
the auxiliary light source 7 is connected with the input end of the auxiliary input optical splitter 1-2 through the first band-pass filter 2-1, the main output end of the auxiliary input optical splitter 1-2 is connected with the second signal end of the input combiner 3-1, and the secondary output end of the auxiliary input optical splitter 1-2 is connected with the second photodiode 6-2;
the common end of the input combiner 3-1 is connected with the input end of a semiconductor optical amplifier 5 through an input isolator 4-1, the output end of the semiconductor optical amplifier 5 is connected with the common end of an output combiner 3-2 through an output isolator 4-2, the first signal end of the output combiner 3-2 is connected with the input end of an output optical splitter 1-3, the main output end of the optical splitter 1-3 is an optical signal output end, and the secondary output end of the optical splitter 1-3 is connected with a third photodiode 6-3; the second signal end of the output combiner 3-2 is connected with the input end of the second band-pass filter 2-2, the output end of the second band-pass filter 2-2 is connected with the input end of the auxiliary output optical splitter 1-4, the secondary output end of the auxiliary output optical splitter 1-4 is an auxiliary optical signal output end, and the main output end of the auxiliary output optical splitter 1-4 is connected with the fourth photodiode 6-4.
As a third embodiment of the present invention:
as shown in fig. 3, the optical path structure includes: the device comprises an input optical splitter 1-1, an input multiplexer 3-1, an input isolator 4-1, a semiconductor optical amplifier 5, an output isolator 4-2, an output multiplexer 3-2, an output optical splitter 1-3, an auxiliary light source 7 and an auxiliary input optical splitter 1-2;
the input end of the input optical splitter 1-1 is an optical signal input end, an optical signal is input from the optical signal input end, the main output end of the input optical splitter 1-1 is connected with the first signal end of the input multiplexer 3-1, and the secondary output end of the input optical splitter 1-1 is connected with the first photodiode 6-1;
the auxiliary light source 7 is connected with the input end of the auxiliary input optical splitter 1-2, the main output end of the auxiliary input optical splitter 1-2 is connected with the second signal end of the input multiplexer 3-1, and the secondary output end of the auxiliary input optical splitter 1-2 is connected with the second photodiode 6-2;
the common end of the input combiner 3-1 is connected with the input end of a semiconductor optical amplifier 5 through an input isolator 4-1, the output end of the semiconductor optical amplifier 5 is connected with the common end of an output combiner 3-2 through an output isolator 4-2, the first signal end of the output combiner 3-2 is connected with the input end of an output optical splitter 1-3, the main output end of the optical splitter 1-3 is an optical signal output end, and the secondary output end of the optical splitter 1-3 is connected with a third photodiode 6-3; and the second signal end of the output combiner 3-2 is connected with a fourth photodiode 6-4.
As a fourth embodiment of the present invention:
as shown in fig. 4, the optical path structure includes: the optical amplifier comprises an input optical splitter 1-1, an input multiplexer 3-1, an input isolator 4-1, a semiconductor optical amplifier 5, an output isolator 4-2, an output multiplexer 3-2, an output optical splitter 1-3, an auxiliary light source 7, an auxiliary input optical splitter 1-2 and an auxiliary output optical splitter 1-4;
the input end of the input optical splitter 1-1 is an optical signal input end, an optical signal is input from the optical signal input end, the main output end of the input optical splitter 1-1 is connected with the first signal end of the input multiplexer 3-1, and the secondary output end of the input optical splitter 1-1 is connected with the first photodiode 6-1;
the auxiliary light source 7 is connected with the input end of the auxiliary input optical splitter 1-2, the main output end of the auxiliary input optical splitter 1-2 is connected with the second signal end of the input multiplexer 3-1, and the secondary output end of the auxiliary input optical splitter 1-2 is connected with the second photodiode 6-2;
the common end of the input combiner 3-1 is connected with the input end of a semiconductor optical amplifier 5 through an input isolator 4-1, the output end of the semiconductor optical amplifier 5 is connected with the common end of an output combiner 3-2 through an output isolator 4-2, the first signal end of the output combiner 3-2 is connected with the input end of an output optical splitter 1-3, the main output end of the optical splitter 1-3 is an optical signal output end, and the secondary output end of the optical splitter 1-3 is connected with a third photodiode 6-3; the second signal end of the output combiner 3-2 is connected with the input end of an auxiliary output optical splitter 1-4, the main output end of the auxiliary output optical splitter 1-4 is connected with a fourth photodiode 6-4, and the secondary output end of the auxiliary output optical splitter 1-4 is an auxiliary optical signal output end.
It should be explained that if the wavelength of the input optical signal is λa，The input optical signal may be a single channel or a plurality of channels, depending on the transmission system. The auxiliary light source 7 generates light with a wavelength lambdabThe stable signal is optimal, and the wavelength difference between the auxiliary signal generated by the auxiliary light source 7 and the input optical signal is more than 5 nm. Such as lambda of the input optical signalaIs 1310-1320 nm, the lambda of the auxiliary signal generated by the auxiliary light source 7bEither more than 1325nm or less than 1305nm can be selected, otherwise the transition wavelengths of the input combiner 3-1 and the output combiner 3-2 are small and the cost is high.
The auxiliary signal generated by the auxiliary light source 7 can be selected from a single-wavelength narrow-linewidth light source or a broadband light source (such as an ASE light source), and the requirements for the filter are different according to the difference of the auxiliary light source.
If the auxiliary signal generated by the auxiliary light source 7 is broadband light source, the central wavelength of the first band-pass filter 2-1 and the second band-pass filter 2-2 is equal to λbThe bandwidth should not be too large, and the transmission isolation should be large enough. Otherwise semiconductor amplificationThe noise generated by the device 5 will be superimposed or cross-talk on the auxiliary signal, while lambdabThe filtering of other wavelengths is insufficient, resulting in a large error in the accuracy of gain control. Generally, the bandwidth can be selected to be 100Ghz at about 0.4 nm; the transmission isolation is more than 30dB, otherwise, the transmission isolation needs to be used in series superposition, so that the lambda can be usedbThe other wavelengths are filtered out.
If the auxiliary signal generated by the auxiliary light source 7 is a narrow-linewidth single-wave light source, for example, the 3dB bandwidth is less than 0.1nm, and the signal-to-noise ratio of the light source itself is greater than 30dB, the first band-pass filter 2-1 and the second band-pass filter 2-2 may be omitted, and the schematic diagram of the optical path structure is shown in fig. 3 and 4.
The present invention and the embodiments thereof have been described above, but the description is not limited thereto, and what is shown in the drawings is only one of the embodiments of the present invention, and the actual structure is not limited thereto. In summary, those skilled in the art should understand that they should not be limited to the embodiments described above, and that they can design the similar structure and embodiments without departing from the spirit of the invention.
Claims (6)
1. An optical path structure of a semiconductor optical fiber amplifier, characterized by comprising: the optical amplifier comprises an input optical splitter (1-1), an input multiplexer (3-1), an input isolator (4-1), a semiconductor optical amplifier (5), an output isolator (4-2), an output multiplexer (3-2), an output optical splitter (1-3), an auxiliary light source (7) and an auxiliary input optical splitter (1-2);
the input end of the input optical splitter (1-1) is an optical signal input end, and the main output end of the input optical splitter (1-1) is connected with the first signal end of the input multiplexer (3-1);
the auxiliary light source (7) is connected with the input end of the auxiliary input optical splitter (1-2), and the main output end of the auxiliary input optical splitter (1-2) is connected with the second signal end of the input combiner (3-1);
the common end of the input combiner (3-1) is connected with the input end of the semiconductor optical amplifier (5) through the input isolator (4-1), the output end of the conductor optical amplifier (5) is connected with the common end of the output combiner (3-2) through the output isolator (4-2), the first signal end of the output combiner (3-2) is connected with the input end of the output optical splitter (1-3), and the main output end of the optical splitter (1-3) is an optical signal output end.
2. The optical circuit structure of a semiconductor optical fiber amplifier according to claim 1, wherein the secondary output terminal of the input splitter (1-1) is connected to a first photodiode (6-1); the secondary output end of the auxiliary input optical splitter (1-2) is connected with a second photodiode (6-2); the secondary output end of the output optical splitter (1-3) is connected with the third photodiode (6-3).
3. The optical circuit structure of a semiconductor optical fiber amplifier according to claim 1, wherein the second signal terminal of the output combiner (3-2) is connected to an input terminal of an auxiliary output splitter (1-4), and a secondary output terminal of the auxiliary output splitter (1-4) is an auxiliary optical signal output terminal.
4. An optical circuit arrangement of a semiconductor optical fiber amplifier according to claim 3, characterized in that the second signal terminal of the output combiner (3-2) is connected to the input terminal of the auxiliary output splitter (1-4) via a second band-pass filter (2-2).
5. An optical circuit arrangement of a semiconductor optical fiber amplifier according to claim 3, characterized in that the main output of the auxiliary output splitter (1-4) is connected to a fourth photodiode (6-4).
6. The optical circuit structure of a semiconductor optical fiber amplifier according to claim 1, wherein the auxiliary light source (7) is connected to an input end of the auxiliary input splitter (1-2) through a first band-pass filter (2-1).
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| CN110456589A (en) * | 2019-09-12 | 2019-11-15 | 无锡市德科立光电子技术有限公司 | A kind of light channel structure of semiconductor light fiber amplifier |
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| CN110456589A (en) * | 2019-09-12 | 2019-11-15 | 无锡市德科立光电子技术有限公司 | A kind of light channel structure of semiconductor light fiber amplifier |
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Address after: 214028 plot 93-c, science and Technology Industrial Park, Xinwu District, Wuxi City, Jiangsu Province Patentee after: Wuxi dekeli Optoelectronic Technology Co.,Ltd. Address before: 214028 plot 93-c, science and Technology Industrial Park, Xinwu District, Wuxi City, Jiangsu Province Patentee before: WUXI TACLINK OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |