CN210375638U - On-chip waveguide loss measuring device - Google Patents
On-chip waveguide loss measuring device Download PDFInfo
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- CN210375638U CN210375638U CN201921455306.0U CN201921455306U CN210375638U CN 210375638 U CN210375638 U CN 210375638U CN 201921455306 U CN201921455306 U CN 201921455306U CN 210375638 U CN210375638 U CN 210375638U
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Abstract
The application provides an on-chip waveguide loss measurement device. The on-chip waveguide loss measurement apparatus has at least one on-chip waveguide loss measurement unit, wherein each of the on-chip waveguide loss measurement units includes: an optical coupler formed in top silicon of a silicon-on-insulator (SOI) substrate; the beam splitter is positioned on one side of the light emergent end of the optical coupler and used for receiving the light emitted by the light emergent end of the optical coupler; a waveguide group formed in the top silicon, the waveguide group having two or more waveguides, each of the waveguides receiving light emitted from the beam splitter, and the waveguides having different lengths; and two or more photodetectors formed on the top silicon, light output from the light output end of each of the waveguides being detected by one of the photodetectors, the photodetectors generating a current corresponding to the detected light.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a device for measuring waveguide loss on a silicon substrate.
Background
Along with the rapid development of communication technology, large-scale data exchange processing between chips, data centers and base stations is urgently needed, and high-speed, reliable, low-cost and low-power-consumption interconnection is urgently needed.
Silicon photonics, which is a new generation technology for optical device development and integration based on silicon and silicon-based substrate materials (e.g., SiGe/Si, SOI, etc.) using existing CMOS processes, combines the characteristics of ultra-large scale, ultra-high precision fabrication of integrated circuit technology with the advantages of photonics technology, ultra-high speed, ultra-low power consumption. Silicon photonics has urgent application requirements in the fields of optical communication and optical interconnection at the present stage, and is a potential technology for realizing on-chip optical interconnection and optical computers in the future.
Although the manufacturing process of the silicon optical chip is compatible with the CMOS process, the packaging and measuring cost of the silicon optical module is difficult to be effectively reduced, which also makes the cost advantage of the silicon optical chip not be fully demonstrated. The transmission loss of a silicon waveguide is one of the important characterizing parameters of a silicon photonics wafer. In the prior art, the waveguide loss is usually measured by a cut-back method.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present application.
SUMMERY OF THE UTILITY MODEL
The inventor of the present application finds that when the waveguide loss is measured by using the conventional cut-back method, light needs to be coupled into multiple sections of waveguides with different lengths, and the measurement accuracy is affected by the inconsistency of the performance of the optical fiber/coupler and the inconsistency of the coupling alignment accuracy. To achieve relatively accurate measurements, precise alignment of the fiber with the coupler is required, which greatly increases the cost of the test; in addition, output light needs to enter an external detector through a coupling structure to measure output power, and measuring errors and cost are further improved.
The embodiment of the application provides an on-chip waveguide loss measuring method, an on-chip waveguide loss measuring device and a manufacturing method thereof, wherein an optical coupler, a beam splitter, a plurality of waveguides and a photoelectric detector are integrated in the on-chip waveguide loss measuring device, so that the problem of coupling efficiency between an external optical fiber and the optical coupler does not need to be considered, the requirement of optical fiber-chip alignment precision is effectively reduced, and efficient and rapid waveguide loss measurement is realized.
According to an aspect of an embodiment of the present application, there is provided an on-chip waveguide loss measurement apparatus having at least one on-chip waveguide loss measurement unit, wherein each of the on-chip waveguide loss measurement units includes:
an optical coupler formed in top silicon of a silicon-on-insulator (SOI) substrate;
the beam splitter is positioned on one side of the light emergent end of the optical coupler and used for receiving the light emitted by the light emergent end of the optical coupler;
a waveguide group formed in the top silicon, the waveguide group having two or more waveguides, each of the waveguides receiving light emitted from the beam splitter, and the waveguides having different lengths; and
and two or more photodetectors formed on the top silicon, light output from the light output end of each of the waveguides being detected by one of the photodetectors, the photodetectors generating a current corresponding to the detected light.
According to another aspect of the embodiments of the present application, wherein the on-chip waveguide loss measurement unit further includes:
a cladding layer covering the optical coupler, the beam splitter, the waveguide set, and the photodetector.
According to another aspect of an embodiment of the present application, wherein the cover layer has an opening, the optical coupler is located below the opening.
According to another aspect of an embodiment of the present application, wherein the optical coupler is an end-face coupler or a grating coupler.
According to another aspect of embodiments herein, wherein the photodetector is a germanium (Ge) detector or a germanium tin (GeSn) detector.
According to another aspect of the embodiments of the present application, the on-chip waveguide loss measuring apparatus has two or more on-chip waveguide loss measuring units, the length of the waveguide in the waveguide group of any one of the on-chip waveguide loss measuring units is at least partially different from the length of the waveguide in the waveguide group of the other on-chip waveguide loss measuring units, the two or more on-chip waveguide loss measuring units are disposed on the same silicon-on-insulator (SOI) substrate, and at least one of the photodetectors is shared by at least two of the on-chip waveguide loss measuring units.
According to another aspect of the embodiments of the present application, there is provided a method for measuring an on-chip waveguide loss by using the apparatus for measuring an on-chip waveguide loss according to any one of the above aspects, the method including:
irradiating light to the optical coupler;
measuring the photocurrent value output by each photoelectric detector;
and calculating the loss of the on-chip waveguide according to the photocurrent value output by the photoelectric detector.
According to another aspect of the embodiments of the present application, there is provided a method of manufacturing an on-chip waveguide loss measurement apparatus having at least one on-chip waveguide loss measurement unit, wherein the method of manufacturing each on-chip waveguide loss measurement unit includes:
forming an optical coupler in top silicon of a silicon-on-insulator (SOI) substrate;
forming a beam splitter on one side of the light emergent end of the optical coupler, wherein the beam splitter receives light emitted from the light emergent end of the optical coupler;
forming a waveguide group in the top silicon, wherein the waveguide group is provided with more than 2 waveguides, each waveguide receives the light emitted by the beam splitter, and the lengths of the waveguides are different; and
and more than two photodetectors are formed on the top layer silicon, light output by the light output end of each waveguide is detected by one photodetector, and the photodetectors generate currents corresponding to the detected light.
According to another aspect of the embodiments of the present application, the method for manufacturing each on-chip waveguide loss measurement unit further includes:
forming a cladding layer covering the optical coupler, the beam splitter, the waveguide set, and the photodetector.
According to another aspect of the embodiments of the present application, the method for manufacturing each on-chip waveguide loss measurement unit further includes:
an opening is formed in the cover layer, the optical coupler being located below the opening.
The beneficial effect of this application lies in: the on-chip waveguide loss measuring device is integrated with the optical coupler, the beam splitter, the plurality of waveguides and the photoelectric detector, so that the problem of coupling efficiency between an external optical fiber and the optical coupler is not required to be considered, the requirement on the alignment precision of the optical fiber and a chip is effectively reduced, and efficient and quick waveguide loss measurement is realized.
Specific embodiments of the present application are disclosed in detail with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the present application are not so limited in scope. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments, in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
fig. 1 is a schematic view of an on-chip waveguide loss measuring device according to embodiment 1 of the present application in a lateral direction;
FIG. 2 is a schematic view showing a cross section of an on-chip waveguide loss measuring apparatus according to embodiment 1 of the present application in a longitudinal direction;
fig. 3 is another schematic view in the lateral direction of the on-chip waveguide loss measuring apparatus according to embodiment 1 of the present application;
FIG. 4 is a schematic diagram of a method of calculating waveguide loss using the on-chip waveguide loss measurement apparatus 10 of FIG. 1;
fig. 5 is a schematic diagram of a manufacturing method of the on-chip waveguide loss measuring apparatus of the present embodiment.
Detailed Description
The foregoing and other features of the present application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the description and drawings, particular embodiments of the application are disclosed in detail as being indicative of some of the embodiments in which the principles of the application may be employed, it being understood that the application is not limited to the described embodiments, but, on the contrary, is intended to cover all modifications, variations, and equivalents falling within the scope of the appended claims.
In the description of the embodiments of the present application, for convenience of description, a direction parallel to the surface of the substrate is referred to as "lateral direction", and a direction perpendicular to the surface of the substrate is referred to as "longitudinal direction", wherein "thickness" of each component refers to a dimension of the component in the "longitudinal direction", a direction directed from a buried oxide layer of the substrate toward the top silicon layer in the "longitudinal direction" is referred to as "upper" direction, and a direction opposite to the "upper" direction is referred to as "lower" direction.
Example 1
The embodiment of the application provides an on-chip waveguide loss measuring device. The on-chip waveguide loss measurement apparatus may have at least one on-chip waveguide loss measurement unit.
Fig. 1 is a schematic view of an on-chip waveguide loss measurement device according to embodiment 1 of the present application in a transverse direction, and fig. 2 is a schematic view of a cross section of the on-chip waveguide loss measurement device according to embodiment 1 of the present application in a longitudinal direction.
In fig. 1 and 2, one on-chip waveguide loss measurement unit 1 in an on-chip waveguide loss measurement apparatus 10 is shown.
As shown in fig. 1 and 2, the on-chip waveguide loss measurement unit 1 includes: optical coupler 102, beam splitter 103, waveguide set 104, and photodetector 105.
As shown in fig. 2, an optocoupler 102 is formed in the top silicon 101 of a silicon-on-insulator (SOI) substrate 100; the beam splitter 103 is located on the light emitting end side of the optical coupler 102, and the beam splitter 103 receives the light emitted from the light emitting end 1022 of the optical coupler 102, for example, the beam splitter 103 is an 50/50 beam splitter; the waveguide group 104 has two or more waveguides, for example, a waveguide 1041 and a waveguide 1042 (as shown in fig. 1), each waveguide in the waveguide group 104 is formed in the top silicon 101, that is, each waveguide 1041, 1042 is a silicon waveguide, lengths of the waveguides 1041, 1042 are different, each waveguide 1041, 1042 receives light emitted from the beam splitter 103, that is, the beam splitter 103 splits the received light into a plurality of beams and the beams enter each waveguide 1041, 1042 respectively; the photodetectors 105 are formed on the top silicon layer 101, and are used for detecting light output by each waveguide in the waveguide group and generating current, and the number of the photodetectors 105 may be two or more, for example, photodetectors 1051 and 1052 (as shown in fig. 1), where the photodetectors 1051 and 1052 respectively detect light output by the waveguides 1041 and 1042.
In the present embodiment, the on-chip waveguide loss measurement unit 1 has integrated therein an optical coupler 102, a beam splitter 103, a plurality of waveguides 1041, 1042, and a plurality of photodetectors 1051, 1052. The light entering the optical coupler 102 exits to the beam splitter 103, and is split into a plurality of light beams by the beam splitter 103, the plurality of light beams enter the plurality of waveguides 1041, 1042 having different lengths, the photodetectors 1051, 1052 detect the light emitted from the plurality of waveguides 1041, 1042 to generate a current corresponding to the detected light, and the waveguide loss of the waveguide formed in the top silicon of the substrate can be calculated from the current value of the current. Therefore, when the on-chip waveguide loss measuring device of the embodiment is used for detecting the on-chip waveguide loss, the problem of the coupling efficiency between the external optical fiber and the optical coupler does not need to be considered, the requirement of the optical fiber-chip alignment precision can be effectively reduced, and the efficient and quick waveguide loss measurement can be realized.
In the present embodiment, as shown in fig. 1, a silicon-on-insulator (SOI) substrate 100 may include: a substrate silicon layer 108, a buried oxide layer 109, and a top layer of silicon 101. The substrate silicon 108 is made of monocrystalline silicon, the top layer silicon 101 is made of monocrystalline silicon, and the buried oxide layer 109 is made of silicon dioxide.
In this embodiment, the optical coupler 102 may have a light incident end 1021 and a light emitting end 1022. The light incident end 1021 may receive light incident to the optical coupler 102, and the light exit end 1022 may cause the light incident to the optical coupler 102 to exit in a lateral direction.
As shown in fig. 1 and 2, the optical coupler 102 may be a grating coupler 102a, i.e., the light-incident end 1021 may be a grating structure that is distributed in the lateral direction, and thus, the grating structure may receive light entering the optical coupler in the longitudinal direction. In addition, the present embodiment is not limited to this, and the optical coupler 102 may also be an end-face coupler 102b (as shown in fig. 1), that is, the light incident end 1021 may also be an end-face coupled structure. In fig. 1, the on-chip waveguide loss measurement unit 1 may have both grating couplers 102a and 102b, and may also have one of the grating couplers 102a and 102 b.
In this embodiment, the light incident ends of the waveguides 1041 and 1042 may be laterally opposed to the light output end of the beam splitter 103, so that light emitted laterally from the light output end of the beam splitter 103 can be incident on the waveguides 1041 and 1042. Each waveguide 1041, 1042 is fabricated from top silicon 101.
As shown in fig. 2, the photodetector 105 is formed on the top silicon 101, and light emitted from the light emitting end of each waveguide can enter the top silicon 101 opposite to the light emitting end. The top silicon 101 may guide incident light into the photodetector 105, and thus the photodetector 105 may detect light entering the top silicon 101 and output a current signal corresponding to the amount of incident light.
In the present embodiment, the photodetector 105 may be a germanium (Ge) detector or a germanium tin (GeSn) detector. In addition, the present embodiment may not be limited thereto, and the photodetector 105 may be another kind of photodetector.
In the present embodiment, as shown in fig. 2, the on-chip waveguide loss measurement unit 1 further includes: a cover layer 107. The cladding layer 107 may cover the optical coupler 102, the straight beam splitter 103, the waveguide set 104, and the photodetectors 105. The cover layer 107 thereby protects the covered structure. The material of the cap layer 107 may be an insulating material, such as silicon dioxide.
As shown in fig. 2, the cover layer 107 may have an opening 1071, and the optical coupler 102 may be located below the opening 1071. For example, the light incident end 1021 of the optical coupler 102, which is a grating structure, may be located below the opening 1071, whereby light may be incident to the light incident end 1021 through the opening 1071.
Further, as shown in fig. 1, a waveguide 110 formed of the top silicon 101 may be provided between the optical coupler 102 and the beam splitter 103, and the waveguide 110 guides light from the optical coupler 102 to the beam splitter 103.
Fig. 3 is another schematic diagram in the lateral direction of the on-chip waveguide loss measurement apparatus according to embodiment 1 of the present application, and as shown in fig. 3, the on-chip waveguide loss measurement apparatus 10a has 2 on-chip waveguide loss measurement units, such as waveguide loss measurement units 1 and 1'; and, the two or more on-chip waveguide loss measurement units are disposed on a same silicon-on-insulator (SOI) substrate.
As shown in fig. 3, the on-chip waveguide loss measuring unit 1 has a structure as shown in fig. 1, and the on-chip waveguide loss measuring unit 1' includes: optical coupler 102 ', beam splitter 103', waveguide set 104 ', and photodetector 105'.
Wherein the waveguide set 104 'has waveguides 1041' and 1042 ', and the photodetector 105' has a photodetector 1051 'and a photodetector 1052'. Photodetector 1051 'and photodetector 1051 may be the same photodetector, and photodetector 1052' and photodetector 1052 may be the same photodetector.
For a detailed description of the on-chip waveguide loss measuring unit 1', reference is made to the above description of the on-chip waveguide loss measuring unit 1.
In the present embodiment, in the case where the on-chip waveguide loss measurement apparatus has 2 or more on-chip waveguide loss measurement units, the length of the waveguide in the waveguide group of any one of the on-chip waveguide loss measurement units is at least partially different from the length of the waveguide in the waveguide group of the other on-chip waveguide loss measurement units.
For example, in FIG. 3, waveguide 1041 has a length of 100 microns, waveguide 1042 has a length of 2 centimeters, waveguide 1041 'has a length of 100 microns, and waveguide 1042' has a length of 4 centimeters.
Fig. 4 is a schematic diagram of a method of calculating a waveguide loss using the on-chip waveguide loss measurement apparatus 10 of fig. 1, and as shown in fig. 4, the method of calculating a waveguide loss based on a waveguide loss measurement unit in the on-chip waveguide loss measurement apparatus 10 includes:
and 403, calculating the loss of the on-chip waveguide according to the current value of the photocurrent output by the photoelectric detector.
In the present embodiment, in step 401, light may be irradiated from the opening 1071 to the light incident end 1021 of the optical coupler 102 through an optical fiber.
Further, when the on-chip waveguide loss measurement apparatus has two or more on-chip waveguide loss measurement units, the above-described steps 401 and 402 may be performed for each of the on-chip waveguide loss measurement units, and the loss of the on-chip waveguide may be calculated from the measurement result of the optical current value for each of the on-chip waveguide loss measurement units.
For example, in the case where the on-chip waveguide loss measurement apparatus 10a shown in fig. 3 has the waveguide loss measurement units 1 and 1', the loss of the on-chip waveguide can be calculated according to the following steps:
step 401a, irradiating light to the optical coupler 102;
step 402a, measuring the photocurrent values output by the photodetectors 1051 and 1052, for example, the photocurrent value output by the photodetector 1051 is I1 amperes, and the photocurrent value output by the photodetector 1052 is I2 amperes;
step 401b, irradiating light to the optical coupler 102';
step 402b, measure the photocurrent values output by the photodetectors 1051 and 1052, for example, the photocurrent value output by the photodetector 1051 is I3 amperes, and the photocurrent value output by the photodetector 1052 is I4 amperes.
And step 403a, calculating the loss of the on-chip waveguide according to the current values (for example, I1, I2, I3 and I4) of the photocurrents output by the front side and the rear side of each photoelectric detector.
Wherein, in step 403a, the loss of the on-chip waveguide can be calculated according to the following formula:
in the present embodiment, the on-chip waveguide loss measurement unit 1 has integrated therein an optical coupler 102, a beam splitter 103, a plurality of waveguides 1041, 1042, and a plurality of photodetectors 1051, 1052. When the on-chip waveguide loss measuring device is used for detecting the on-chip waveguide loss, the problem of the coupling efficiency between an external optical fiber and an optical coupler does not need to be considered, the requirement on the alignment precision of the optical fiber and a chip can be effectively reduced, and efficient and quick waveguide loss measurement is realized.
Example 2
Embodiment 2 provides a method for manufacturing an on-chip waveguide loss measurement device, which is used for manufacturing the on-chip waveguide loss measurement device described in embodiment 1. The on-chip waveguide loss measurement apparatus has at least one on-chip waveguide loss measurement unit.
Fig. 5 is a schematic diagram of a method of manufacturing each on-chip waveguide loss measurement unit in the on-chip waveguide loss measurement apparatus of the present embodiment. As shown in fig. 5, in the present embodiment, the manufacturing method may include:
As shown in fig. 5, the manufacturing method further includes:
In this embodiment, as shown in fig. 5, the manufacturing method further includes:
step 506 forms an opening 1071 in the cap layer 107, with the optocoupler 102 located below the opening 1071.
In addition, in step 503, while forming the waveguide set 104, the waveguide 110 may be formed in the top layer silicon 101, and the waveguide 110 is located between the optical coupler 102 and the beam splitter 103, so that light can be guided from the optical coupler 102 to the beam splitter 103.
According to the present embodiment, in the present embodiment, the on-chip waveguide loss measurement unit 1 is integrated with the optical coupler 102, the beam splitter 103, the plurality of waveguides 1041, 1042, and the plurality of photodetectors 1051, 1052. When the on-chip waveguide loss measuring device is used for detecting the on-chip waveguide loss, the problem of the coupling efficiency between an external optical fiber and an optical coupler does not need to be considered, the requirement on the alignment precision of the optical fiber and a chip can be effectively reduced, and efficient and quick waveguide loss measurement is realized.
The present application has been described in conjunction with specific embodiments, but it should be understood by those skilled in the art that these descriptions are intended to be illustrative, and not limiting. Various modifications and adaptations of the present application may occur to those skilled in the art based on the spirit and principles of the application and are within the scope of the application.
Claims (6)
1. An on-chip waveguide loss measurement apparatus having at least one on-chip waveguide loss measurement unit, wherein each of the on-chip waveguide loss measurement units comprises:
an optical coupler formed in top silicon of a silicon-on-insulator (SOI) substrate;
the beam splitter is positioned on one side of the light emergent end of the optical coupler and used for receiving the light emitted by the light emergent end of the optical coupler;
a waveguide group formed in the top silicon, the waveguide group having two or more waveguides, each of the waveguides receiving light emitted from the beam splitter, and the waveguides having different lengths; and
and two or more photodetectors formed on the top silicon, light output from the light output end of each of the waveguides being detected by one of the photodetectors, the photodetectors generating a current corresponding to the detected light.
2. The on-chip waveguide loss measurement device of claim 1, wherein the on-chip waveguide loss measurement unit further comprises:
a cladding layer covering the optical coupler, the beam splitter, the waveguide set, and the photodetector.
3. The on-chip waveguide loss measurement apparatus of claim 2,
the cover layer has an opening, and the optical coupler is located below the opening.
4. The on-chip waveguide loss measurement apparatus of claim 3,
the optical coupler is an end face coupler or a grating coupler.
5. The on-chip waveguide loss measurement apparatus of claim 3,
the photodetector is a germanium (Ge) detector or a germanium tin (GeSn) detector.
6. The on-chip waveguide loss measurement device of any one of claims 1-5,
the on-chip waveguide loss measuring device has two or more on-chip waveguide loss measuring units,
the length of the waveguides in the waveguide group of any one of the on-chip waveguide loss measurement units is at least partially different from the length of the waveguides in the waveguide groups of the other on-chip waveguide loss measurement units,
the more than two on-chip waveguide loss measurement units are arranged on the same silicon-on-insulator (SOI) substrate, and at least two on-chip waveguide loss measurement units share at least one photodetector.
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