CN210351090U - Ultra-wideband amplifier and multi-carrier transmitting and receiving device based on same - Google Patents
Ultra-wideband amplifier and multi-carrier transmitting and receiving device based on same Download PDFInfo
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- CN210351090U CN210351090U CN201921005477.3U CN201921005477U CN210351090U CN 210351090 U CN210351090 U CN 210351090U CN 201921005477 U CN201921005477 U CN 201921005477U CN 210351090 U CN210351090 U CN 210351090U
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Abstract
The utility model provides an ultra wide band amplifier and multi-carrier emission, transceiver based on this amplifier, wherein ultra wide band amplifier includes power amplifier, bias supply circuit on the grid, bias supply circuit under the grid, bias supply circuit on the drain electrode and bias supply circuit under the drain electrode; the grid electrode upper bias power supply circuit and the grid electrode lower bias power supply circuit respectively supply power to the grid electrode of the power amplifier, the drain electrode upper bias power supply circuit and the drain electrode lower bias power supply circuit respectively supply power to the drain electrode of the power amplifier, and the power amplifier is a GaN amplifier or an LDMOS amplifier. The utility model discloses can increase power amplifier's bandwidth and form ultra wide band amplifier, ultra wide band amplifier can enlarge multichannel carrier signal in radio frequency channel, reduces radio frequency channel quantity, volume, consumption and the cost etc. of equipment.
Description
Technical Field
The utility model relates to a mobile communication technology field, more specifically relates to an ultra wide band amplifier and multi-carrier transmission, transceiver based on this amplifier.
Background
The existing communication system mostly adopts a design scheme of a narrow-band multi-frequency multi-channel independent system, and the design scheme has the defects of too many channels, large equipment volume, heaviness, high cost, large power consumption and the like. The Ultra Wide Band (UWB) technology is a novel wireless communication technology. It makes the signal have a bandwidth of the order of GHz by directly modulating an impulse with very steep rise and fall times. The existing ultra-wideband amplifier mostly adopts GaAs (gallium arsenide), LDMOS (laterally diffused metal oxide semiconductor), GaN (gallium nitride) devices and the like. If the rated power of the ultra-wideband amplifier is more than 0.5W, a GaN amplifier or an LDMOS amplifier is needed, the GaN amplifier or the LDMOS amplifier can only reach the bandwidth of 300MHz generally, but 1800 MHz-2700 MHz of a mobile and communicated public network communication frequency band, the GAN amplifier or the LDMOS amplifier needs to reach the bandwidth of 900MHz in order to cover the frequency bands, and the bandwidth of the GAN amplifier or the LDMOS amplifier is increased as much as possible.
SUMMERY OF THE UTILITY MODEL
The utility model aims at overcoming above-mentioned prior art's at least one kind defect (not enough), provide an ultra wide band amplifier and based on this amplifier's multicarrier transmission, transceiver, can increase power amplifier's bandwidth and form ultra wide band amplifier, ultra wide band amplifier can enlarge multichannel carrier signal in radio frequency channel, reduces radio frequency channel quantity, volume, consumption and the cost etc. of equipment.
The utility model adopts the technical proposal that:
an ultra-wideband amplifier comprises a power amplifier, a grid upper bias power supply circuit, a grid lower bias power supply circuit, a drain upper bias power supply circuit and a drain lower bias power supply circuit;
the grid electrode upper bias power supply circuit and the grid electrode lower bias power supply circuit respectively supply power to the grid electrode of the power amplifier, the drain electrode upper bias power supply circuit and the drain electrode lower bias power supply circuit respectively supply power to the drain electrode of the power amplifier, and the power amplifier is a GaN amplifier or an LDMOS amplifier.
The grid electrode of the power amplifier is powered by an upper bias power supply circuit and a lower bias power supply circuit, and the drain electrode of the power amplifier is powered by the upper bias power supply circuit and the lower bias power supply circuit, so that the display bandwidth of the power amplifier can be improved, the memory effect of the power amplifier can be eliminated, and the parasitic inductance and the capacitance of the grid electrode and the drain electrode of the power amplifier can be reduced, thereby increasing the bandwidth of the power amplifier.
Further, the gain of the power amplifier is 10 dB-16 dB.
The gain of the GaN amplifier or the LDMOS amplifier is about 20dB generally, and the gain of the power amplifier is adjusted to 10 dB-16 dB by adopting a gain sacrificing mode, so that the power amplifier can realize larger bandwidth.
Furthermore, the bias power supply circuit on the grid electrode, the bias power supply circuit under the grid electrode and/or the bias power supply circuit on the drain electrode and the bias power supply circuit under the drain electrode are respectively provided with a multi-order progressive impedance matching circuit.
The upper and lower bias power supply circuits of the grid electrode of the power amplifier and/or the upper and lower bias power supply circuits of the drain electrode of the power amplifier are provided with multi-order progressive impedance matching circuits, so that the bandwidth of the power amplifier can be further increased.
A multi-carrier transmitting device comprises a first baseband processing unit, a first radio frequency front end unit, an antenna feed system and the ultra-wideband amplifier;
the first baseband processing unit is used for receiving and processing downlink carrier baseband signals of n different frequency bands and outputting downlink carrier radio-frequency signals of n different frequency bands, wherein n is an integer greater than 0;
the first radio frequency front end unit is configured to combine the n downlink carrier radio frequency signals output by the first baseband processing unit and output a carrier downlink combined signal;
the ultra-wideband amplifier is used for amplifying the carrier downlink combined signal output by the first radio frequency front end unit.
By utilizing the ultra-wideband characteristic of the ultra-wideband amplifier, one downlink radio frequency channel realizes the amplification of downlink carrier radio frequency signals of multiple different frequency bands, and the downlink carrier combined signals amplified by the ultra-wideband amplifier can be transmitted out through an antenna feed system.
Furthermore, the number of the ultra-wideband amplifiers is multiple, and the multiple ultra-wideband amplifiers are mutually cascaded.
In order to obtain sufficient radio frequency power, a radio frequency signal is fed to an antenna feed system to be transmitted, and a multistage ultra wide band amplifier can be adopted to carry out a series of amplifications on the radio frequency signal.
Further, the multi-carrier transmitting device also comprises a circulator, and the circulator is connected between two adjacent ultra-wideband amplifiers.
Because the ultra-wideband amplifier adopts a series of designs for increasing the bandwidth, the S11 index (input port return loss) and the S22 index (output port return loss) of the ultra-wideband amplifier deteriorate and become sensitive, which results in a large influence of the ultra-wideband amplifier of the next stage on the ultra-wideband amplifier of the previous stage, and finally influences the wideband flatness of the S21 index (gain) of the radio frequency link and the stability of the transmitting device. Therefore, the ultra-wideband circulator is added between two adjacent front and back ultra-wideband amplifiers to improve the radio frequency isolation of the front and back ultra-wideband amplifiers.
Further, the first baseband processing unit includes:
the first DSP unit is used for receiving downlink carrier baseband signals of n different frequency bands, converting the downlink carrier baseband signals of the FDD _ LTE mode into downlink carrier baseband signals of the TD _ LTE mode, and outputting n downlink carrier baseband signals;
and the DAC unit is used for converting the n downlink carrier baseband signals in the digital signal mode output by the first DSP unit into downlink carrier radio-frequency signals in an analog signal mode and outputting the n downlink carrier radio-frequency signals.
Because TD _ LTE is the mainstream communication mode of mobile companies in China, the present embodiment uniformly adopts TDD common-frequency time division multiplexing mode for processing. If the carrier of a certain frequency band is in the FDD _ LTE mode, the first DSP unit converts the carrier of the FDD _ LTE mode into the TD _ LTE mode.
A multi-carrier transceiver comprises a signal amplifier, a second radio frequency front end unit, a second baseband processing unit and the multi-carrier transmitter;
the signal amplifier is used for amplifying the uplink carrier radio frequency signal;
the second radio frequency front end unit is configured to perform power division on the uplink carrier radio frequency signals amplified by the signal amplifier, and output n uplink carrier radio frequency signals of different frequency bands;
the second baseband processing unit is configured to receive and process the uplink carrier radio frequency signals of n different frequency bands output by the second radio frequency front end unit, and output uplink carrier baseband signals of n different frequency bands.
By utilizing the ultra-wideband characteristic of the ultra-wideband amplifier, a downlink radio frequency channel realizes the amplification of downlink carrier radio frequency signals of multiple different frequency bands, a downlink carrier combined signal amplified by the ultra-wideband amplifier can be transmitted out through an antenna feeder system, the antenna feeder system receives multiple uplink carrier radio frequency signals of different terminal UE, and an uplink radio frequency channel can process the multiple uplink carrier radio frequency signals.
Further, the second baseband processing unit further includes:
the ADC unit is used for converting the uplink carrier radio-frequency signals of the n analog signal modes into uplink carrier baseband signals of a digital signal mode and outputting the n uplink carrier baseband signals;
the second DSP unit is further configured to receive the n uplink carrier baseband signals output by the ADC unit, convert the uplink carrier baseband signal in the FDD _ LTE mode into an uplink carrier baseband signal in the TD _ LTE mode, and output the n uplink carrier baseband signals.
Because TD _ LTE is the mainstream communication mode of mobile companies in China, the present embodiment uniformly adopts TDD common-frequency time division multiplexing mode for processing. If the carrier of a certain frequency band is in the FDD _ LTE mode, the second DSP unit converts the carrier of the FDD _ LTE mode into the TD _ LTE mode.
Further, the second rf front-end unit includes:
the power divider is used for performing power division on the uplink carrier radio-frequency signals amplified by the signal amplifier and outputting n uplink carrier radio-frequency signals;
the n gating devices are used for gating different frequency bands of each uplink carrier radio-frequency signal output by the power divider and outputting a gated uplink carrier radio-frequency signal of one frequency band;
and the n gating filter banks are used for filtering the gated uplink carrier radio frequency signals.
The second baseband processing unit is specifically configured to receive and process gated uplink carrier radio-frequency signals and output n uplink carrier baseband signals of different frequency bands.
Different frequency bands in each uplink carrier radio-frequency signal can be separated by using the gating device, and the separated uplink carrier radio-frequency signals with different frequency bands can be filtered respectively and can be input into the second baseband processing unit respectively for processing.
Compared with the prior art, the beneficial effects of the utility model are that:
(1) the GaN amplifier or the LDMOS amplifier is subjected to upper and lower double-bias feeding of a grid electrode and a drain electrode, so that the display bandwidth of the broadband of the GaN amplifier or the LDMOS amplifier is improved, the memory effect, parasitic inductance and capacitance of the GaN amplifier or the LDMOS amplifier are reduced, and the bandwidth of the GaN amplifier or the LDMOS amplifier is increased;
(2) the bandwidth of the GaN amplifier or the LDMOS amplifier is further increased in a mode of sacrificing the gain of the GaN amplifier or the LDMOS amplifier;
(3) the multi-order progressive impedance matching circuit is arranged in the upper and lower double-bias feed circuit of the grid electrode and the drain electrode of the GaN amplifier or the LDMOS amplifier, so that the bandwidth of the GaN amplifier or the LDMOS amplifier is further increased;
(4) the cascade connection of the ultra-wideband amplifiers is adopted to obtain enough radio frequency power to meet the requirement of an antenna feed system on radio frequency signals, and the ultra-wideband circulator is added between two adjacent cascaded ultra-wideband amplifiers, so that the radio frequency isolation of the front and rear ultra-wideband amplifiers can be improved, and the problem of radio frequency stability caused by the measure of increasing the bandwidth is avoided;
(5) by utilizing the ultra-wideband characteristic of the ultra-wideband amplifier, one downlink radio frequency channel realizes the amplification of downlink carrier radio frequency signals of multiple different frequency bands, and one uplink radio frequency channel can process multiple uplink carrier radio frequency signals.
Drawings
Fig. 1 is a schematic diagram of an ultra wideband amplifier in embodiment 1 of the present invention.
Fig. 2 is a schematic diagram of another ultra-wideband amplifier according to embodiment 1 of the present invention.
Fig. 3 is a schematic diagram of a multi-carrier transmitting apparatus in embodiment 2 of the present invention.
Fig. 4 is a waveform of S21 curve of the final power amplifier in the embodiment 2 of the present invention using the narrow band design.
Fig. 5 is a waveform of S21 curve of the final power amplifier in the ultra-wideband design according to embodiment 2 of the present invention.
Fig. 6 is a waveform of S21 curve of the whole downlink rf channel in embodiment 2 of the present invention, which adopts the ultra-wideband design.
Fig. 7 is a schematic diagram of a multicarrier transceiver according to embodiment 3 of the present invention.
Fig. 8 is a schematic diagram of another multicarrier transceiver according to embodiment 3 of the present invention.
Detailed Description
The drawings of the present invention are for illustration purposes only and are not to be construed as limiting the invention. For a better understanding of the following embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
Example 1
As shown in fig. 1, the present embodiment provides an ultra-wideband amplifier, which includes a power amplifier U4, a gate-up bias supply circuit, a gate-down bias supply circuit, a drain-up bias supply circuit, and a drain-down bias supply circuit;
the bias power supply circuit on the grid electrode and the bias power supply circuit under the grid electrode respectively supply power to the grid electrode of a power amplifier U4, the bias power supply circuit on the drain electrode and the bias power supply circuit under the drain electrode respectively supply power to the drain electrode of a power amplifier U4, and the power amplifier U4 is a GaN amplifier or an LDMOS amplifier.
The grid electrode of the power amplifier U4 is powered by an upper bias power supply circuit and a lower bias power supply circuit, and the drain electrode is also powered by the upper bias power supply circuit and the lower bias power supply circuit, so that the display bandwidth of the power amplifier U4 can be improved, the memory effect of the power amplifier U4 can be eliminated, the parasitic inductance and the capacitance of the grid electrode and the drain electrode of the power amplifier U4 can be reduced, and the bandwidth of the power amplifier U4 can be increased.
In one embodiment, the gain of the power amplifier U4 is 10dB to 16 dB.
The gain of the GaN amplifier or the LDMOS amplifier is about 20dB generally, and the gain of the power amplifier U4 is adjusted to 10 dB-16 dB by adopting a gain sacrificing mode, so that the power amplifier U4 can realize larger bandwidth.
As shown in fig. 2, in this embodiment, the bias power supply circuit on the gate, the bias power supply circuit under the gate and/or the bias power supply circuit on the drain, and the bias power supply circuit under the drain are respectively provided with a multi-stage progressive impedance matching circuit.
The upper and lower bias power supply circuits of the grid of the power amplifier U4 and/or the upper and lower bias power supply circuits of the drain are provided with multi-stage progressive impedance matching circuits, so that the bandwidth of the power amplifier U4 can be further increased.
Specifically, the bias power supply circuit on the grid and the bias power supply circuit under the grid are respectively provided with a first impedance matching circuit, and the first filter matching circuit comprises a resistor R21 and a first capacitor group formed by mutually connecting a plurality of capacitors with capacities presenting a relationship in parallel. The input end of the resistor R21 and the input end of the first capacitor bank are respectively connected with the power source VG, the output end of the resistor R21 is connected with the grid of the power amplifier U4, and the output end of the first capacitor bank is grounded. In a specific implementation process, the first capacitor bank may be formed by connecting a capacitor C22, a capacitor C19, a capacitor C20, and a capacitor C21 in parallel, where a capacitance of the capacitor C22 is 100pF, a capacitance of the capacitor C19 is 10pF, a capacitance of the capacitor C20 is 10pF, a capacitance of the capacitor C21 is 0.8pF, and capacitances of the capacitor C22, the capacitor C19/the capacitor C20, and the capacitor C21 are gradually reduced in a direction approaching to a gate of the power amplifier U4.
The drain electrode upper bias power supply circuit and the drain electrode lower bias power supply circuit are respectively provided with a second impedance matching circuit, and the second impedance matching circuit comprises a second capacitor group formed by mutually connecting a plurality of capacitors with progressive capacity in parallel. The input end of the second capacitor bank is respectively connected with the grid of the power amplifier U4 and the power supply VD, and the output end of the second capacitor bank is grounded. In a specific implementation process, the second capacitor group may be formed by connecting a capacitor C38, a capacitor C36, a capacitor C35, and a capacitor C25 in parallel, where a capacitance of the capacitor C38 is 47nF, a capacitance of the capacitor C36 is 10nF, a capacitance of the capacitor C35 is 0.1nF, a capacitance of the capacitor C25 is 0.8pF, and the capacitances of the capacitor C38, the capacitor C36, the capacitor C35, and the capacitor C25 are gradually reduced in a direction approaching to the drain of the power amplifier U4.
The ultra-wideband amplifier provided by the embodiment can realize the bandwidth of at least 900MHz and cover 1800 MHz-2700 MHz of mobile and communicated public network communication frequency band.
The ultra-wideband amplifier provided by the embodiment is applied to a radio frequency circuit, a gate filter circuit can be further arranged on the gate of the power amplifier U4, and a drain filter circuit can be further arranged on the drain. The gate filter circuit comprises a resistor R24, a resistor R23, a resistor R25, an inductor L3, a capacitor C41, a capacitor C39 and a capacitor C45, wherein the input end of the capacitor C39, the input end of the capacitor C45 and the output end of the capacitor C41 are respectively connected with the gate of the power amplifier U4, the input end of the capacitor C41 is respectively connected with the input end of the resistor R25, the input end of the inductor L3 and the output end of the resistor R23, the input end of the resistor R23 is connected with the input end of the resistor R24 and a radio frequency signal inlet, and the output ends of the resistor R24, the resistor R25, the inductor L3, the capacitor C39 and the capacitor C45. The drain filter circuit comprises a capacitor C46 and a capacitor C47, and the input end of the capacitor C46 and the input end of the capacitor C47 are respectively connected with the drain of the power amplifier U4.
Example 2
As shown in fig. 3, the present embodiment provides a multi-carrier transmitting apparatus, which includes a first baseband processing unit, a first rf front-end unit, an antenna feed system, and an ultra-wideband amplifier as described in embodiment 1;
the first baseband processing unit is used for receiving and processing downlink carrier baseband signals of n different frequency bands and outputting downlink carrier radio-frequency signals of n different frequency bands, wherein n is an integer greater than 0;
the first radio frequency front end unit is configured to combine the n downlink carrier radio frequency signals output by the first baseband processing unit and output a carrier downlink combined signal;
the ultra-wideband amplifier is used for amplifying the carrier downlink combined signal output by the first radio frequency front end unit.
By utilizing the ultra-wideband characteristic of the ultra-wideband amplifier, one downlink radio frequency channel realizes the amplification of downlink carrier radio frequency signals of multiple different frequency bands, and the downlink carrier combined signals amplified by the ultra-wideband amplifier can be transmitted out through an antenna feed system.
In this embodiment, the number of the ultra-wideband amplifiers is multiple, and the multiple ultra-wideband amplifiers are cascaded with each other.
In order to obtain sufficient radio frequency power, a radio frequency signal is fed to an antenna feed system to be transmitted, and a multistage ultra wide band amplifier can be adopted to carry out a series of amplifications on the radio frequency signal.
In the present embodiment, the multicarrier transmitting apparatus further includes a circulator Z1, and the circulator Z1 is connected between two adjacent ultra-wideband amplifiers.
Since the ultra-wideband amplifier described in embodiment 1 adopts a series of designs for increasing its bandwidth, its S11 index (input port return loss) and S22 index (output port return loss) deteriorate and become relatively sensitive, which results in a large influence of the ultra-wideband amplifier of the next stage on the ultra-wideband amplifier of the previous stage, and finally affects the wideband flatness of the S21 index (gain) of the radio frequency link and the stability of the transmitting device. Therefore, the ultra-wideband circulator Z1 is added between two adjacent front and back ultra-wideband amplifiers to improve the radio frequency isolation of the front and back ultra-wideband amplifiers.
In this embodiment, the first baseband processing unit includes:
the first DSP unit is used for receiving downlink carrier baseband signals of n different frequency bands, converting the downlink carrier baseband signals of the FDD _ LTE mode into downlink carrier baseband signals of the TD _ LTE mode, and outputting n downlink carrier baseband signals;
and the DAC unit is used for converting the n downlink carrier baseband signals in the digital signal mode output by the first DSP unit into downlink carrier radio-frequency signals in an analog signal mode and outputting the n downlink carrier radio-frequency signals.
Because TD _ LTE is the mainstream communication mode of mobile companies in China, the present embodiment uniformly adopts TDD common-frequency time division multiplexing mode for processing. If the carrier of a certain frequency band is in the FDD _ LTE mode, the first DSP unit converts the carrier of the FDD _ LTE mode into the TD _ LTE mode.
In a specific implementation process, n first DSP units may be set, and each first DSP unit receives and processes one downlink carrier baseband signal; an integrated first DSP unit may also be provided, which receives and processes the n downlink carrier baseband signals. The first DSP unit can select a single-chip single-channel or a single-chip multi-channel integrated transceiver chip of manufacturers such as Borton, Intel and the like.
Preferably, the first baseband processing unit further includes: and the A-type amplifier is used for amplifying the n downlink carrier radio-frequency signals output by the DAC unit.
Preferably, the first baseband processing unit further includes: and the temperature compensation circuit is used for carrying out gain compensation on the class A amplifier.
Preferably, the first baseband processing unit further includes: balun (Balun, Balanced-unbalanced Transformer) for balancing the n downlink carrier rf signals output by the DAC.
Preferably, the multicarrier transmitting apparatus further comprises: and the satellite time service unit is used for providing time service information and/or positioning information for the first baseband processing unit.
The satellite time service unit can adopt a GPS time service module or a Beidou time service module, can transmit time and/or geographic position signals and/or pulse per second signals to the first baseband processing unit through the network port, ensures the synchronism of n downlink carrier baseband signals, and can provide a positioning function because the first baseband processing unit, the first radio frequency front-end unit, the ultra-wideband amplifier and the antenna feed system are synchronous in receiving and transmitting.
Specifically, the satellite time service unit is connected with the first DSP unit.
Taking n as an example 2, assuming that the open signals in the actual engineering are the 1840MHz carrier F1 signal of FDD _ LTE and the 2600MHz carrier F2 signal of TD _ LTE, the downlink rf channel is: the first DSP unit of the first baseband processing unit processes the downlink carrier baseband signals F1 and F2, respectively, and converts F1 into TD _ LTE mode since F1 is FDD _ LTE mode. The downlink carrier baseband signals F1 and F2 processed by the first DSP unit are transmitted to the DAC unit, and the DAC unit converts the downlink carrier baseband signals F1 and F2 into two downlink carrier radio-frequency signals F1 'and F2' respectively. The two downlink carrier radio frequency signals F1 'and F2' are amplified by the class A amplifier and then enter a combiner of the first radio frequency front end unit to be combined into (F1 '+ F2') signals. And transmitting the combined (F1 '+ F2') signal to an ultra-wideband amplifier for power amplification, and finally transmitting the signal through an antenna feed system.
The working frequency Band of the embodiment can be Band1 (1920-1980 MHz, 2110-2170 MHz), Band3 (1735-1780 MHz, 1830-1875 MHz), Band39 (1880-1915 MHz), Band40 (2320-2370 MHz) and Band41 (2575-2635 MHz), and the method is also suitable for LTE, GSM and the like in a bandwidth of 500-1200 MHz. The embodiment is not limited to the limitation of the frequency band, and can be flexibly applied to different frequency band combinations within a certain bandwidth.
The simulation design is carried out on the embodiment, and two ultra-wideband amplifiers are adopted for cascading. Fig. 4 shows a waveform of S21 curve of the final power amplifier under the existing narrow-band design, fig. 5 shows a waveform of S21 curve of the final power amplifier under the ultra-wideband design of the present embodiment, and fig. 6 shows a waveform of S21 curve of the entire downlink rf channel under the ultra-wideband design of the present embodiment.
As can be seen from FIG. 4, the S21 index remains above 12.7dB only within the bandwidth (400MHz) of 1.88GHz to 1.92 GHz; as can be seen from FIG. 5, the S21 index remains above 2dB over a bandwidth of 1.7GHz to 2.70GHz (1000 MHz). Comparing fig. 4 and 5, although the ultra-wideband design S21 of this embodiment is reduced in size, the bandwidth is significantly increased. As can be seen from FIG. 6, in the bandwidth (870MHz) of 1.83 GHz-2.70 GHz, the index S21 is kept above 12dB, and in the bandwidth, the gain flatness is less than 3dB, and the bandwidth reaches at least 900MHz, and the bandwidth can cover 1800 MHz-2700 MHz of mobile and Unicom public network communication bands.
Example 3
As shown in fig. 7, the present embodiment provides a multi-carrier transceiver, which includes a signal amplifier, a second rf front-end unit, a second baseband processing unit, and the multi-carrier transmitter according to embodiment 2;
the antenna feed system is also used for receiving uplink carrier radio frequency signals;
the signal amplifier is used for amplifying the uplink carrier radio frequency signal received by the antenna feed system;
the second radio frequency front end unit is configured to perform power division on the uplink carrier radio frequency signals amplified by the signal amplifier, and output n uplink carrier radio frequency signals of different frequency bands;
the second baseband processing unit is configured to receive and process the uplink carrier radio frequency signals of n different frequency bands output by the second radio frequency front end unit, and output uplink carrier baseband signals of n different frequency bands.
By utilizing the ultra-wideband characteristic of the ultra-wideband amplifier, a downlink radio frequency channel realizes the amplification of downlink carrier radio frequency signals of multiple different frequency bands, a downlink carrier combined signal amplified by the ultra-wideband amplifier can be transmitted out through an antenna feeder system, the antenna feeder system receives multiple uplink carrier radio frequency signals of different terminal UE, and an uplink radio frequency channel can process the multiple uplink carrier radio frequency signals.
Preferably, a circulator Z2 is further connected between the output end of the ultra-wideband amplifier and the antenna feed system, and a circulator Z2 is further connected with the input end of the signal amplifier.
Through the arrangement of the circulator Z2, the radio frequency isolation of uplink radio frequency signal transmission and downlink radio frequency signal reception can be improved.
The signal amplifier preferably employs a Low power amplifier (LNA) with Low noise and high gain, and a Low power amplifier with a wide bandwidth is selected.
In this embodiment, the second baseband processing unit further includes:
the ADC unit is used for converting the uplink carrier radio-frequency signals of the n analog signal modes into uplink carrier baseband signals of a digital signal mode and outputting the n uplink carrier baseband signals;
the second DSP unit is further configured to receive the n uplink carrier baseband signals output by the ADC unit, convert the uplink carrier baseband signal in the FDD _ LTE mode into an uplink carrier baseband signal in the TD _ LTE mode, and output the n uplink carrier baseband signals.
Because TD _ LTE is the mainstream communication mode of mobile companies in China, the present embodiment uniformly adopts TDD common-frequency time division multiplexing mode for processing. If the carrier of a certain frequency band is in the FDD _ LTE mode, the second DSP unit converts the carrier of the FDD _ LTE mode into the TD _ LTE mode.
In a specific implementation process, n second DSP units may be set, each second DSP unit receiving and processing an uplink carrier baseband signal; an integrated second DSP unit may also be provided that receives and processes the n uplink carrier baseband signals. The second DSP unit can select a single-chip single-channel or a single-chip multi-channel integrated transceiver chip of manufacturers such as Borton, Intel and the like.
In this embodiment, the second rf front-end unit includes:
the power divider is used for performing power division on the uplink carrier radio-frequency signals amplified by the signal amplifier and outputting n uplink carrier radio-frequency signals;
the n gating devices are used for gating different frequency bands of each uplink carrier radio-frequency signal output by the power divider and outputting a gated uplink carrier radio-frequency signal of one frequency band;
and the n gating filter banks are used for filtering the gated uplink carrier radio frequency signals.
The second baseband processing unit is specifically configured to receive and process gated uplink carrier radio-frequency signals and output n uplink carrier baseband signals of different frequency bands.
Different frequency bands in each uplink carrier radio-frequency signal can be separated by using the gating device, and the separated uplink carrier radio-frequency signals with different frequency bands can be filtered respectively and can be input into the second baseband processing unit respectively for processing.
In a specific implementation process, the gating device may be two single-pole multi-throw switches respectively located at an input end and an output end of the gating filter bank.
Preferably, the second baseband processing unit further includes: and the balun is used for balancing n downlink carrier baseband signals output by the ADC.
Preferably, the satellite time service unit is further configured to provide time service information for the second baseband processing unit.
Similarly, assuming that n is 2 as an example, the actual engineering is open with a 1840MHz carrier F1 signal of FDD _ LTE and a 2600MHz carrier F2 signal of TD _ LTE.
The downlink radio frequency channel is: the first DSP unit of the first baseband processing unit processes the downlink carrier baseband signals F1 and F2, respectively, and converts F1 into TD _ LTE mode since F1 is FDD _ LTE mode. The downlink carrier baseband signals F1 and F2 processed by the first DSP unit are transmitted to the DAC unit, and the DAC unit converts the downlink carrier baseband signals F1 and F2 into two downlink carrier radio-frequency signals F1 'and F2' respectively. The two downlink carrier radio frequency signals F1 'and F2' are amplified by the class A amplifier and then enter a combiner of the first radio frequency front end unit to be combined into (F1 '+ F2') signals. And transmitting the combined (F1 '+ F2') signal to an ultra-wideband amplifier for power amplification, and finally transmitting the signal through an antenna feed system.
The uplink radio frequency channel is: uplink carrier radio frequency signals (F1 '+ F2') from different terminals UE received by an antenna feed system enter an uplink broadband LNA link through a circulator Z2, are amplified and then enter a power divider of a second radio frequency front end unit, and are divided into two paths of uplink carrier radio frequency signals F1 'and F2'; the frequency band channels of the uplink carrier radio-frequency signals are selected by F1 'and F2' through a single-pole multi-throw radio-frequency switch respectively, the gated filter bank filters the uplink carrier radio-frequency signals of the gated frequency band, the filtered gated uplink carrier radio-frequency signals are transmitted to the ADC unit, the ADC unit converts F1 'and F2' into two uplink carrier baseband signals F1 and F2 respectively, and F1 and F2 enter a second DSP unit of the second baseband processing unit respectively for processing.
The satellite time service unit provides time service information for the first baseband processing unit and the second baseband processing unit respectively. Specifically, the satellite time service unit is respectively connected with the first DSP unit and the second DSP unit.
The working frequency Band of the embodiment can be Band1 (1920-1980 MHz, 2110-2170 MHz), Band3 (1735-1780 MHz, 1830-1875 MHz), Band39 (1880-1915 MHz), Band40 (2320-2370 MHz) and Band41 (2575-2635 MHz). As shown in fig. 7, the gated filter bank may be configured for the above-mentioned operating frequency band. In fig. 7, Band1 is abbreviated as B1, Band3 is abbreviated as B3, Band39 is abbreviated as B39, Band40 is abbreviated as B40, and Band41 is abbreviated as B41.
As shown in fig. 8, the first baseband processing unit and the second baseband processing unit may be integrated into one baseband processing unit, wherein the first DSP unit and the second DSP unit may be integrated into one DSP unit, the DAC unit and the ADC unit may be integrated into transceivers, and n transceivers may be provided for n carriers. In addition, the first rf front-end unit and the second rf front-end unit may be integrated into one rf front-end unit, and the ultra-wideband amplifier and the signal amplifier may also be integrated into one power amplification unit.
The embodiment can be applied to the mobile phone interception technology. In the prior art, frequency interference is basically adopted to drive 4G signals to be reduced to 2G or 3G for obtaining information, the effect is poor, and the problems that part of mobile phone users have abnormal public network access and the like are easily caused. Or, by using the technology of the GSM code detection technology system developed by the LTE technology, through simulating a broadcast induction signal of a Mobile communication network of an operator, a Mobile phone terminal in a standby state around the Mobile phone terminal detects a transmission change of a location area, collects information of a public network user terminal in a coverage area, and transmits the collected IMSI (International Mobile Subscriber Identity) and IMEI (International Mobile Equipment Identity) to a background information collection center in real time in a wired or wireless backhaul manner.
The existing code detection technology system is a design scheme of a narrow-band multi-frequency multi-channel independent system, and the system has the defects of too many channels, large equipment volume, heaviness, high cost, large power consumption and the like. The embodiment is a design scheme of an ultra-wideband multi-carrier system, an uplink carrier baseband signal in an FDD _ LTE mode works in a TD _ LTE mode, a time slot in a frame structure of the uplink carrier baseband signal is used as uplink monitoring wireless communication public network broadcast information so as to establish synchronization with a public network, an induced uplink carrier radio frequency signal is sent through an uplink radio frequency channel, so that a mobile phone terminal detects the emission change of a position area and transmits the IMSI and/or IMEI back to a background monitoring center through a downlink radio frequency channel,
the embodiment is applied to the mobile phone interception technology, and a brand-new system-level technical solution can be formed aiming at the defects and differences of the prior art. The embodiment can be used as a multi-carrier TD _ LTE mobile phone code detecting system based on an ultra-wideband amplifier, and synchronizes and detects an FDD _ LTE mode carrier in a TD _ LTE mode, and specifically comprises the following steps: the downlink radio frequency channel of the embodiment transmits the induced signal of the analog public network, and the uplink radio frequency channel of the embodiment acquires the IMSI and IMEI of each user terminal.
It is obvious that the above embodiments of the present invention are only examples for clearly illustrating the technical solutions of the present invention, and are not limitations to the specific embodiments of the present invention. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims (10)
1. An ultra-wideband amplifier is characterized by comprising a power amplifier, a grid upper bias power supply circuit, a grid lower bias power supply circuit, a drain upper bias power supply circuit and a drain lower bias power supply circuit;
the grid electrode upper bias power supply circuit and the grid electrode lower bias power supply circuit respectively supply power to the grid electrode of the power amplifier, the drain electrode upper bias power supply circuit and the drain electrode lower bias power supply circuit respectively supply power to the drain electrode of the power amplifier, and the power amplifier is a GaN amplifier or an LDMOS amplifier.
2. The ultra-wideband amplifier of claim 1, where the gain of the power amplifier is 10dB to 16 dB.
3. The ultra-wideband amplifier according to claim 1 or 2, wherein the bias supply circuit on the gate, the bias supply circuit under the gate and/or the bias supply circuit on the drain, the bias supply circuit under the drain are respectively provided with a multi-step progressive impedance matching circuit.
4. A multi-carrier transmission apparatus comprising a first baseband processing unit, a first radio frequency front end unit, an antenna feed system and an ultra-wideband amplifier as claimed in any one of claims 1 to 3;
the first baseband processing unit is used for receiving and processing downlink carrier baseband signals of n different frequency bands and outputting downlink carrier radio-frequency signals of n different frequency bands, wherein n is an integer greater than 0;
the first radio frequency front end unit is configured to combine the n downlink carrier radio frequency signals output by the first baseband processing unit and output a carrier downlink combined signal;
the ultra-wideband amplifier is used for amplifying the carrier downlink combined signal output by the first radio frequency front end unit.
5. The multi-carrier transmission apparatus according to claim 4, wherein said ultra-wideband amplifier is plural, and a plurality of ultra-wideband amplifiers are cascaded with each other.
6. The multi-carrier transmission apparatus according to claim 5, further comprising a circulator connected between adjacent two ultra-wideband amplifiers.
7. The multi-carrier transmission apparatus according to any of claims 4 to 6, wherein the first baseband processing unit comprises:
the first DSP unit is used for receiving downlink carrier baseband signals of n different frequency bands, converting the downlink carrier baseband signals of the FDD _ LTE mode into downlink carrier baseband signals of the TD _ LTE mode, and outputting n downlink carrier baseband signals;
and the DAC unit is used for converting the n downlink carrier baseband signals in the digital signal mode output by the first DSP unit into downlink carrier radio-frequency signals in an analog signal mode and outputting the n downlink carrier radio-frequency signals.
8. A multicarrier transmitter/receiver apparatus, comprising a signal amplifier, a second rf front-end unit, a second baseband processing unit, and a multicarrier transmitter apparatus according to any one of claims 4 to 7;
the signal amplifier is used for amplifying the uplink carrier radio frequency signal;
the second radio frequency front end unit is configured to perform power division on the uplink carrier radio frequency signals amplified by the signal amplifier, and output n uplink carrier radio frequency signals of different frequency bands;
the second baseband processing unit is configured to receive and process the uplink carrier radio frequency signals of n different frequency bands output by the second radio frequency front end unit, and output uplink carrier baseband signals of n different frequency bands.
9. The multicarrier transceiver apparatus according to claim 8, wherein said second baseband processing unit further comprises:
the ADC unit is used for converting the uplink carrier radio-frequency signals of the n analog signal modes into uplink carrier baseband signals of a digital signal mode and outputting the n uplink carrier baseband signals;
the second DSP unit is further configured to receive the n uplink carrier baseband signals output by the ADC unit, convert the uplink carrier baseband signal in the FDD _ LTE mode into an uplink carrier baseband signal in the TD _ LTE mode, and output the n uplink carrier baseband signals.
10. The multicarrier transceiver apparatus according to claim 8, wherein said second rf front-end unit comprises:
the power divider is used for performing power division on the uplink carrier radio-frequency signals amplified by the signal amplifier and outputting n uplink carrier radio-frequency signals;
the n gating devices are used for gating different frequency bands of each uplink carrier radio-frequency signal output by the power divider and outputting a gated uplink carrier radio-frequency signal of one frequency band;
the n gating filter banks are used for filtering the gated uplink carrier radio frequency signals;
the second baseband processing unit is specifically configured to receive and process gated uplink carrier radio-frequency signals and output n uplink carrier baseband signals of different frequency bands.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110311635A (en) * | 2019-06-28 | 2019-10-08 | 京信通信系统（中国）有限公司 | Ultra-wideband amplifier and multi-carrier transmission, R-T unit based on the amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110311635A (en) * | 2019-06-28 | 2019-10-08 | 京信通信系统（中国）有限公司 | Ultra-wideband amplifier and multi-carrier transmission, R-T unit based on the amplifier |
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