CN210350053U - W-band image rejection filter - Google Patents

W-band image rejection filter Download PDF

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Publication number
CN210350053U
CN210350053U CN201921880279.1U CN201921880279U CN210350053U CN 210350053 U CN210350053 U CN 210350053U CN 201921880279 U CN201921880279 U CN 201921880279U CN 210350053 U CN210350053 U CN 210350053U
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diaphragm
inductive
inductance
cavity
distance
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王宸星
顾鹏
刘凯
张玲玲
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Jiangsu Yixin Aerospace Technology Co.,Ltd.
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Nanjing Yixin Aerospace Technology Co ltd
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Abstract

The utility model discloses a W frequency channel image rejection wave filter. The waveguide coupling device comprises a shell formed by butt-jointing and combining an upper shell and a lower shell, wherein the left end and the right end of the shell are waveguide flange interfaces which are symmetrically arranged, the middle part of the shell is a middle square column body which is used for connecting the waveguide flange interfaces at the left end and the right end, a metal cavity is arranged in the middle square column body, inductive diaphragms are symmetrically arranged on the upper side surface and the lower side surface of the metal cavity, and a coupling window is formed between the two symmetrical inductive diaphragms; the upper shell and the lower shell are equally divided along the long side direction of a rectangular waveguide port in the center of the waveguide flange interface, the metal cavity is divided into a metal upper cavity and a metal lower cavity, and the rectangular waveguide port further extends towards the middle square column body and is communicated with the metal cavity. The W-band image rejection filter has the characteristics of convenience in assembly and convenience in connection with adjacent W-band modules, and is convenient to process and manufacture.

Description

W-band image rejection filter
Technical Field
The utility model relates to a millimeter wave communication field especially relates to a W frequency channel mirror image rejection wave filter.
Background
The W-band image rejection filter is to filter a W-band electromagnetic wave signal, which requires that the filter performs image rejection filtering based on a waveguide, and the design and implementation of the filter in the prior art have the problems of complicated structure, poor filtering characteristics, inconvenience in processing, manufacturing and use, and inconvenience in butt joint with the waveguide.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the main technical problem who solves provides a W frequency channel image rejection filter, solves at the problem that W frequency channel image rejection filter structure is complicated, be not convenient for manufacturing and use and lack the waveguide interface.
In order to solve the technical problem, a technical solution adopted by the present invention is to provide a W-band image rejection filter, which includes a housing assembled by an upper housing and a lower housing in a butt joint manner, wherein the left and right ends of the housing are waveguide flange interfaces symmetrically arranged, the middle portion of the housing is a middle square cylinder connecting the waveguide flange interfaces at the left and right ends, a metal cavity is arranged in the middle square cylinder, inductive diaphragms are symmetrically arranged on the upper side surface and the lower side surface of the metal cavity, and a coupling window is formed between the two symmetric inductive diaphragms; the upper shell and the lower shell are equally divided along the long side direction of a rectangular waveguide port in the center of the waveguide flange interface, the metal cavity is divided into a metal upper cavity and a metal lower cavity, and the rectangular waveguide port further extends towards the middle square column and is communicated with the metal cavity.
Preferably, a first inductance diaphragm, a second inductance diaphragm, a third inductance diaphragm, a fourth inductance diaphragm, a fifth inductance diaphragm and a sixth inductance diaphragm are arranged on the upper side surface of the metal cavity at intervals in parallel; a seventh inductance diaphragm, an eighth inductance diaphragm, a ninth inductance diaphragm, a tenth inductance diaphragm, an eleventh inductance diaphragm and a twelfth inductance diaphragm are symmetrically arranged on the lower side surface of the metal cavity;
the metal cavity is divided into a first resonant cavity, a second resonant cavity, a third resonant cavity, a fourth resonant cavity and a fifth resonant cavity by a first inductance diaphragm, a seventh inductance diaphragm, a second inductance diaphragm, an eighth inductance diaphragm, a third inductance diaphragm, a ninth inductance diaphragm, a fourth inductance diaphragm, a tenth inductance diaphragm, a fifth inductance diaphragm, an eleventh inductance diaphragm, a sixth inductance diaphragm and a twelfth inductance diaphragm in sequence.
Preferably, the distance between the first inductance diaphragm and the second inductance diaphragm is 2.34mm, the distance between the second inductance diaphragm and the third inductance diaphragm is 2.37mm, the distance between the third inductance diaphragm and the fourth inductance diaphragm is 2.4mm, the distance between the fourth inductance diaphragm and the fifth inductance diaphragm is 2.37mm, and the distance between the fifth inductance diaphragm and the sixth inductance diaphragm is 2.34 mm.
Preferably, the distance between the first inductance diaphragm and the top surface of the seventh inductance diaphragm is 0.92mm, the distance between the second inductance diaphragm and the top surface of the eighth inductance diaphragm is 0.84mm, the distance between the third inductance diaphragm and the top surface of the ninth inductance diaphragm is 0.83mm, the distance between the fourth inductance diaphragm and the top surface of the tenth inductance diaphragm is 0.83mm, the distance between the fifth inductance diaphragm and the top surface of the eleventh inductance diaphragm is 0.84mm, and the distance between the sixth inductance diaphragm and the top surface of the twelfth inductance diaphragm is 0.92 mm.
Preferably, the metal cavity is a rectangular cavity, and the distance between the upper side and the lower side of the metal cavity is 2.54 mm.
Preferably, the thicknesses of the first inductance film piece to the twelfth inductance film piece are all 0.3 mm.
Preferably, the edges and corners of the first to twelfth inductance films contacting the metal cavity are processed into arc transitions.
Preferably, the structure of the waveguide flange interface is the same as that of the WG27-R900-WR10 waveguide flange.
Preferably, through holes vertically penetrating through the upper shell are formed in the front side and the rear side of the metal upper cavity, threaded holes penetrating through the lower shell are correspondingly formed in the front side and the rear side of the metal lower cavity, and bolts penetrate through the through holes and are installed in the threaded holes, so that the upper shell and the lower shell are tightly connected.
The utility model has the advantages that: the utility model discloses a W frequency channel image rejection wave filter. The waveguide coupling device comprises a shell formed by butt-jointing and combining an upper shell and a lower shell, wherein the left end and the right end of the shell are waveguide flange interfaces which are symmetrically arranged, the middle part of the shell is a middle square column body which is used for connecting the waveguide flange interfaces at the left end and the right end, a metal cavity is arranged in the middle square column body, inductive diaphragms are symmetrically arranged on the upper side surface and the lower side surface of the metal cavity, and a coupling window is formed between the two symmetrical inductive diaphragms; the upper shell and the lower shell are equally divided along the long side direction of a rectangular waveguide port in the center of the waveguide flange interface, the metal cavity is divided into a metal upper cavity and a metal lower cavity, and the rectangular waveguide port further extends towards the middle square column body and is communicated with the metal cavity. The W-band image rejection filter has the characteristics of convenience in assembly and convenience in connection with adjacent W-band modules, and is convenient to process and manufacture.
Drawings
Fig. 1 is a schematic diagram of an embodiment of a W-band image rejection filter according to the present invention;
fig. 2 is a schematic diagram of a metal cavity structure in another embodiment of the W-band image rejection filter according to the present invention;
fig. 3 is a schematic diagram of a metal cavity in another embodiment of the W-band image rejection filter according to the present invention.
Detailed Description
In order to facilitate understanding of the present invention, the present invention will be described in more detail with reference to the accompanying drawings and specific embodiments. Preferred embodiments of the present invention are shown in the drawings. The invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It is to be noted that, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, the W-band image rejection filter includes a housing 1 formed by butt-joining an upper housing 11 and a lower housing 12, the left and right ends of the housing 1 are waveguide flange interfaces 2 symmetrically disposed, and the structure of the waveguide flange interfaces 2 is the same as that of the WG27-R900-WR10 waveguide flange. The middle part is a middle square column body 3 which is connected with waveguide flange interfaces 2 at the left end and the right end.
A metal cavity is arranged in the middle square column body 3, inductive diaphragms are symmetrically arranged on the upper side surface and the lower side surface of the metal cavity, and a coupling window is formed between the two symmetrical inductive diaphragms; the upper shell 11 and the lower shell 12 are equally divided along the long side direction of the rectangular waveguide port 21 in the center of the waveguide flange interface, the metal cavity is divided into a metal upper cavity and a metal lower cavity, and the rectangular waveguide port 21 further extends towards the middle square column 3 to be communicated with the metal cavity.
Through holes vertically penetrating through the upper shell 11 are formed in the front side and the rear side of the upper metal cavity, threaded holes penetrating through the lower shell 12 are correspondingly formed in the front side and the rear side of the lower metal cavity, and the bolts 6 penetrate through the through holes to be installed in the threaded holes, so that the upper shell 11 and the lower shell 12 are tightly connected.
Preferably, the number of the through holes is 8, the through holes are divided into two rows, and each row is four and is distributed on the front side and the rear side of the metal upper cavity.
The W-band image rejection filter can be mounted by screwing the upper shell 11 and the lower shell 12 through bolts after the upper shell and the lower shell are spliced, so that the mounting method has the characteristics of simplicity and quickness, and the mounting efficiency is improved; meanwhile, the installation of the W-band image rejection filter is divided into two parts, so that the processing difficulty of the metal cavity and the inductance diaphragm is reduced, and the processing accuracy is improved.
As shown in fig. 2, fig. 2 is a schematic model view of a metal chamber. A first inductance diaphragm 41, a second inductance diaphragm 42, a third inductance diaphragm 43, a fourth inductance diaphragm 44, a fifth inductance diaphragm 45 and a sixth inductance diaphragm 46 are arranged on the upper side surface 4a of the metal cavity 4 at intervals in parallel; a seventh inductance diaphragm 47, an eighth inductance diaphragm 48, a ninth inductance diaphragm 49, a tenth inductance diaphragm 50, an eleventh inductance diaphragm 51 and a twelfth inductance diaphragm 52 are symmetrically arranged on the lower side surface 4b of the metal cavity 4.
The metal cavity 4 is divided into a first resonant cavity 61, a second resonant cavity 62, a third resonant cavity 63, a fourth resonant cavity 64 and a fifth resonant cavity 65 by a first inductive diaphragm 41, a seventh inductive diaphragm 47, a second inductive diaphragm 42, an eighth inductive diaphragm 48, a third inductive diaphragm 43, a ninth inductive diaphragm 49, a fourth inductive diaphragm 44, a tenth inductive diaphragm 50, a fifth inductive diaphragm 45, an eleventh inductive diaphragm 51, a sixth inductive diaphragm 46 and a twelfth inductive diaphragm 52 in sequence.
A coupling window is formed between the first inductive diaphragm 41 and the seventh inductive diaphragm 47, and is used for controlling the coupling strength of the input W-band electromagnetic wave and the first resonant cavity 61.
A coupling window is formed between the second inductive diaphragm 42 and the eighth inductive diaphragm 48 for controlling the coupling strength between the first resonant cavity 61 and the second resonant cavity 62.
The coupling window formed between the third inductive diaphragm 43 and the ninth inductive diaphragm 49 is used to control the coupling strength between the second resonant cavity 62 and the third resonant cavity 63.
The coupling window formed between the fourth inductive diaphragm 44 and the tenth inductive diaphragm 50 is used to control the coupling strength between the third resonant cavity 63 and the fourth resonant cavity 64.
The coupling window formed between the fifth inductive diaphragm 45 and the eleventh inductive diaphragm 51 is used to control the coupling strength between the fourth resonant cavity 64 and the fifth resonant cavity 65.
The coupling window formed between the sixth inductive diaphragm 46 and the twelfth inductive diaphragm 52 is used to control the coupling strength between the fifth resonant cavity 65 and the output W-band electromagnetic wave. In fig. 2, the corners of the first to twelfth inductive diaphragms (41-52) in contact with the metal cavity are all processed into arc transitions.
Referring to fig. 3, the distance between the first inductance film 41 and the second inductance film 42 is 2.34mm, the distance between the second inductance film 42 and the third inductance film 43 is 2.37mm, the distance between the third inductance film 43 and the fourth inductance film 44 is 2.4mm, the distance between the fourth inductance film 44 and the fifth inductance film 45 is 2.37mm, and the distance between the fifth inductance film 45 and the sixth inductance film 46 is 2.34 mm. The distance between the seventh inductance films to the twelfth inductance films (47 to 52) is the same as the distance between the first inductance films to the sixth inductance films (41 to 46), and the description is omitted.
The distance between the top surfaces of the first inductance diaphragm 41 and the seventh inductance diaphragm 47 is 0.92mm, the distance between the second inductance diaphragm 42 and the top surface of the eighth inductance diaphragm 48 is 0.84mm, the distance between the third inductance diaphragm 43 and the top surface of the ninth inductance diaphragm 49 is 0.83mm, the distance between the fourth inductance diaphragm 44 and the top surface of the tenth inductance diaphragm 50 is 0.83mm, the distance between the fifth inductance diaphragm 45 and the top surface of the eleventh inductance diaphragm 51 is 0.84mm, and the distance between the sixth inductance diaphragm 46 and the top surface of the twelfth inductance diaphragm 52 is 0.92 mm. The metal cavity is a rectangular cavity, and the distance between the upper side face and the lower side face of the metal cavity is 2.54 mm.
The thicknesses of the first inductance membrane to the twelfth inductance membrane (41-52) are all 0.3 mm.
The utility model has the advantages that: the utility model discloses a W frequency channel image rejection wave filter. The waveguide coupling device comprises a shell formed by butt-jointing and combining an upper shell and a lower shell, wherein the left end and the right end of the shell are waveguide flange interfaces which are symmetrically arranged, the middle part of the shell is a middle square column body which is used for connecting the waveguide flange interfaces at the left end and the right end, a metal cavity is arranged in the middle square column body, inductive diaphragms are symmetrically arranged on the upper side surface and the lower side surface of the metal cavity, and a coupling window is formed between the two symmetrical inductive diaphragms; the upper shell and the lower shell are equally divided along the long side direction of a rectangular waveguide port in the center of the waveguide flange interface, the metal cavity is divided into a metal upper cavity and a metal lower cavity, and the rectangular waveguide port further extends towards the middle square column body and is communicated with the metal cavity. The W-band image rejection filter has the characteristics of convenience in assembly and convenience in connection with adjacent W-band modules, and is convenient to process and manufacture.
The above only is the embodiment of the present invention, not limiting the scope of the present invention, all the equivalent structure changes made in the specification and the attached drawings or directly or indirectly applied to other related technical fields are included in the same principle as the present invention.

Claims (9)

1. A W-band mirror image rejection filter is characterized by comprising a shell formed by butt-jointing and combining an upper shell and a lower shell, wherein the left end and the right end of the shell are waveguide flange interfaces which are symmetrically arranged, the middle part of the shell is a middle square cylinder for connecting the waveguide flange interfaces at the left end and the right end, a metal cavity is arranged in the middle square cylinder, inductive diaphragms are symmetrically arranged on the upper side surface and the lower side surface of the metal cavity, and a coupling window is formed between the two symmetrical inductive diaphragms; the upper shell and the lower shell are equally divided along the long side direction of a rectangular waveguide port in the center of the waveguide flange interface, the metal cavity is divided into a metal upper cavity and a metal lower cavity, and the rectangular waveguide port further extends towards the middle square column and is communicated with the metal cavity.
2. The W-band image rejection filter of claim 1, wherein a first inductive diaphragm, a second inductive diaphragm, a third inductive diaphragm, a fourth inductive diaphragm, a fifth inductive diaphragm and a sixth inductive diaphragm are arranged in parallel on the upper side surface of the metal cavity at intervals; a seventh inductance diaphragm, an eighth inductance diaphragm, a ninth inductance diaphragm, a tenth inductance diaphragm, an eleventh inductance diaphragm and a twelfth inductance diaphragm are symmetrically arranged on the lower side surface of the metal cavity;
the metal cavity is divided into a first resonant cavity, a second resonant cavity, a third resonant cavity, a fourth resonant cavity and a fifth resonant cavity by a first inductance diaphragm, a seventh inductance diaphragm, a second inductance diaphragm, an eighth inductance diaphragm, a third inductance diaphragm, a ninth inductance diaphragm, a fourth inductance diaphragm, a tenth inductance diaphragm, a fifth inductance diaphragm, an eleventh inductance diaphragm, a sixth inductance diaphragm and a twelfth inductance diaphragm in sequence.
3. The W-band image rejection filter of claim 2, wherein a distance between the first inductive diaphragm and the second inductive diaphragm is 2.34mm, a distance between the second inductive diaphragm and the third inductive diaphragm is 2.37mm, a distance between the third inductive diaphragm and the fourth inductive diaphragm is 2.4mm, a distance between the fourth inductive diaphragm and the fifth inductive diaphragm is 2.37mm, and a distance between the fifth inductive diaphragm and the sixth inductive diaphragm is 2.34 mm.
4. The W-band image rejection filter of claim 3, wherein a distance between the first inductive diaphragm and a top surface of a seventh inductive diaphragm is 0.92mm, a distance between the second inductive diaphragm and a top surface of an eighth inductive diaphragm is 0.84mm, a distance between the third inductive diaphragm and a top surface of a ninth inductive diaphragm is 0.83mm, a distance between the fourth inductive diaphragm and a top surface of a tenth inductive diaphragm is 0.83mm, a distance between the fifth inductive diaphragm and a top surface of an eleventh inductive diaphragm is 0.84mm, and a distance between the sixth inductive diaphragm and a top surface of a twelfth inductive diaphragm is 0.92 mm.
5. The W-band image rejection filter of claim 4, wherein the metal cavity is a rectangular cavity, and a distance between an upper side and a lower side of the metal cavity is 2.54 mm.
6. The W-band image rejection filter of claim 5, wherein the thicknesses of the first to twelfth inductive diaphragms are all 0.3 mm.
7. The W-band image rejection filter of claim 6, wherein corners of the first to twelfth inductive diaphragms in contact with the metal cavity are all processed to be circular arc transitions.
8. The W-band image rejection filter of claim 7, wherein said waveguide flange interface has a structure identical to that of a WG27-R900-WR10 waveguide flange.
9. The W-band image rejection filter of claim 8, wherein through holes vertically penetrating the upper housing are formed in front and rear sides of the upper metal cavity, threaded holes penetrating the lower housing are correspondingly formed in front and rear sides of the lower metal cavity, and bolts are installed in the threaded holes through the through holes, so that the upper housing and the lower housing are tightly connected.
CN201921880279.1U 2019-11-04 2019-11-04 W-band image rejection filter Active CN210350053U (en)

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Application Number Priority Date Filing Date Title
CN201921880279.1U CN210350053U (en) 2019-11-04 2019-11-04 W-band image rejection filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201921880279.1U CN210350053U (en) 2019-11-04 2019-11-04 W-band image rejection filter

Publications (1)

Publication Number Publication Date
CN210350053U true CN210350053U (en) 2020-04-17

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Application Number Title Priority Date Filing Date
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Address after: Room 704-717, building C, Huirong Business Plaza, No. 26 Hefeng Road, Xinwu District, Wuxi City, Jiangsu Province, 214000

Patentee after: Jiangsu Yixin Aerospace Technology Co.,Ltd.

Address before: 211135 2nd floor, unit B, 300 Zhihui Road, Qilin science and Technology Innovation Park, Jiangning District, Nanjing City, Jiangsu Province

Patentee before: NANJING YIXIN AEROSPACE TECHNOLOGY Co.,Ltd.