CN210349828U - Lap joint structure convenient for IGBT (insulated Gate Bipolar transistor) elastic sheet connection - Google Patents

Lap joint structure convenient for IGBT (insulated Gate Bipolar transistor) elastic sheet connection Download PDF

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Publication number
CN210349828U
CN210349828U CN201920992354.7U CN201920992354U CN210349828U CN 210349828 U CN210349828 U CN 210349828U CN 201920992354 U CN201920992354 U CN 201920992354U CN 210349828 U CN210349828 U CN 210349828U
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China
Prior art keywords
conducting plate
hole
insulating film
igbt
lap joint
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CN201920992354.7U
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Chinese (zh)
Inventor
袁志豪
王亮军
彭乐忠
胡顺鹏
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Zhejiang Sine Power Technology Co ltd
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Zhejiang Sine Power Technology Co ltd
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Priority to CN201920992354.7U priority Critical patent/CN210349828U/en
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Abstract

A lap joint structure convenient for connecting IGBT shrapnel comprises a first conducting plate and a second conducting plate which are arranged in a stacked mode, a first insulating film attached to the outer side of the first conducting plate, a first insulating film attached to the outer side of the second conducting plate, a third insulating film attached between the first conducting plate and the second conducting plate, and a copper gasket sequentially penetrating through the first insulating film, the first conducting plate and the third insulating film. The first current-conducting plate is provided with a first overlapping hole and the first insulating film is provided with a connecting hole communicated with the first overlapping hole, the first current-conducting plate is provided with a hole for the copper gasket to pass through, and an annular gap is reserved between the inner wall of the hole and the outer wall of the copper gasket. And an insulating gasket is arranged in the yielding hole and close to one side of the insulating film, and an insulating sealing edge is arranged in the yielding hole and on one side of the insulating gasket far away from the insulating film.

Description

Lap joint structure convenient for IGBT (insulated Gate Bipolar transistor) elastic sheet connection
Technical Field
The utility model belongs to the technical field of compound female arranging, especially a lap joint structure convenient to IGBT shell fragment is connected.
Background
In the composite busbar industry, the traditional lapping mode of lapping a composite busbar and an Insulated Gate Bipolar Transistor (IGBT) is to lap joint by adopting a copper gasket, and the interference generated when the composite busbar is lapped with an IGBT shrapnel is generally avoided by riveting the copper gasket.
However, the copper gasket lapped IGBT adopted by the composite busbar has the following problems: the copper gasket type is more, and a plurality of copper gasket types are used together easily when the assembly, have increased the installation work volume of production and have reduced production efficiency.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a satisfy the installation noninterference and reduce the overlap joint structure that the IGBT shell fragment of being convenient for that the copper gasket used is connected to solve above-mentioned problem.
The lap joint structure convenient for the connection of the IGBT shrapnel comprises a first conducting plate and a second conducting plate which are arranged in a stacked mode, a first insulating film attached to the outer side of the first conducting plate, a second insulating film attached to the outer side of the second conducting plate, a third insulating film attached between the first conducting plate and the second conducting plate, and a copper gasket sequentially penetrating through the first insulating film, the first conducting plate and the third insulating film. The first current-conducting plate is provided with a first overlapping hole and the first insulating film is provided with a connecting hole communicated with the first overlapping hole, the first current-conducting plate is provided with a hole for the copper gasket to pass through, and an annular gap is reserved between the inner wall of the hole and the outer wall of the copper gasket. And an insulating gasket is arranged in the yielding hole and close to one side of the insulating film, and an insulating sealing edge is arranged in the yielding hole and on one side of the insulating gasket far away from the insulating film. And a second lap joint hole connected with the copper gasket is formed in the second current-conducting plate, and one end, close to the second current-conducting plate, of the copper gasket is inserted into the second lap joint hole and is connected with the second lap joint hole.
Further, the thickness of the insulating gasket is 50% -70% of the thickness of the conductive plate.
Furthermore, the surface of the copper gasket, which is far away from the two sides of the conducting plate, does not protrude out of the surface of the conducting plate, which is far away from the two sides of the conducting plate.
Further, the surface of one side of the insulating edge sealing, which is far away from the insulating gasket, is lower than the surfaces of two sides of the copper gasket, which are far away from the conductive plate.
Further, the aperture of the connecting hole is larger than that of the first overlap hole.
Furthermore, the copper gasket is cylindrical, and an annular connecting part is arranged on the circumferential outer side of one end, away from the second current-conducting plate, of the copper gasket.
Furthermore, one end of the annular connecting part close to the second conducting plate abuts against the second conducting plate.
Further, the connection hole includes any one of a square hole, a circular hole, an elliptical hole, and a triangular hole.
Compared with the prior art, the utility model provides a lap-joint structure convenient to IGBT shell fragment is connected opens the connecting hole through insulating film one and makes a current conducting plate direct and IGBT shell fragment overlap joint, adopts insulating gasket to fill in the hole of stepping down, and rethread insulating banding carries out formula hot pressing banding that sinks, reaches insulating requirement and has sufficient distance to dodge the IGBT shell fragment, has realized having reduced the use of copper gasket when the installation does not interfere with, has improved production efficiency.
Drawings
Fig. 1 is the utility model provides a be convenient for overlap joint structure's that IGBT shell fragment connects structural schematic diagram.
Fig. 2 is the utility model provides a be convenient for overlap joint structure that IGBT shell fragment is connected has current conducting plate one's overlap joint section sketch map.
Fig. 3 is the utility model provides a be convenient for the overlap joint structure that IGBT shell fragment connects has the overlap joint section sketch map of the current conducting plate two.
Detailed Description
Specific examples of the present invention will be described in further detail below. It should be understood that the description herein of embodiments of the invention is not intended to limit the scope of the invention.
Please refer to fig. 1 to fig. 3, which are schematic structural diagrams of a lap joint structure for facilitating connection of the IGBT spring pieces according to the present invention.
The lap joint structure convenient for the connection of the IGBT shrapnel comprises a first conducting plate 1 and a second conducting plate 2 which are arranged in a stacked mode, a first insulating film 3 attached to the outer side of the first conducting plate 1, a second insulating film 4 attached to the outer side of the second conducting plate 2, a third insulating film 5 attached between the first conducting plate 1 and the second conducting plate 2, and a copper gasket 6 sequentially penetrating through the first insulating film 3, the first conducting plate 1 and the third insulating film 5. In addition, the lap joint structure for facilitating the connection of the IGBT spring pieces further includes some other connecting components, such as an IGBT spring piece component, an adhesive component, and an electrical connecting component, which are well known to those skilled in the art and will not be described in detail herein.
The first conducting plate 1 is provided with a first bridging hole 11, the first insulating film 3 is provided with a connecting hole 31 communicated with the first bridging hole 11, and the diameter of the connecting hole 31 is larger than that of the first bridging hole 11. Conceivably, the insulating film I3 is provided with a connecting hole 31, the overlap hole I11 is communicated with the outside, an exposed overlap surface is formed on the conductive plate I1, the IGBT elastic sheet can be directly overlapped with the conductive plate I1, and the use of the copper gasket 6 is reduced. The connection hole 31 includes any one of a square hole, a circular hole, an elliptical hole, and a triangular hole. In the present embodiment, the connection hole 31 is a square hole.
The conducting plate is characterized in that the conducting plate 1 is provided with a yielding hole 12 for the copper gasket 6 to penetrate through, an annular gap exists between the inner wall of the yielding hole 12 and the outer wall of the copper gasket 6, an insulating gasket 7 is arranged in the yielding hole 12 and on one side close to the third insulating film 5, and the thickness of the insulating gasket 7 is 50% -70% of the thickness of the conducting plate 1. And an insulating sealing edge 8 is arranged in the abdicating hole 12 and on one side of the insulating gasket 7 far away from the third insulating film 5. It is conceivable that the steel gasket passes through the abdicating hole 12 on the conductive plate 1 and an annular gap exists between the inner wall of the abdicating hole 12 and the outer wall of the copper gasket 6, i.e. insulation between the copper gasket 6 and the conductive plate 1 is ensured. In this embodiment, the thickness of the insulating spacer 7 is 50% of the thickness of the first conductive plate 1. And then, the insulating film is subjected to sinking type hot pressing edge sealing through the convex mould to form an insulating edge sealing 8, so that interference between the IGBT elastic sheet and the conducting bar abdicating hole 12 is avoided when the IGBT elastic sheet is lapped, the copper gasket 6 and the abdicating hole 12 reach the insulating requirement and have enough distance to abdicate the IGBT elastic sheet. In addition, the surface of one side of the insulating seal edge 8, which is far away from the insulating gasket 7, is lower than the surface of one side of the copper gasket 6, which is far away from the second conducting plate 2, so that the exposed surface of the copper gasket 6 is enlarged, and the IGBT elastic sheet can be more reliably lapped with the copper gasket 6.
And a second lap joint hole 21 connected with the copper gasket 6 is formed in the second current-conducting plate 2, and one end, close to the second current-conducting plate 2, of the copper gasket 6 is inserted into the second lap joint hole 21 and is connected with the second lap joint hole 21. The surface of the copper gasket 6 far away from the second conducting plate 2 does not protrude out of the surface of the first conducting plate 1 far away from the second conducting plate 2. The copper gasket 6 is cylindrical, and an annular connecting part 61 is arranged on the circumferential outer side of one end, away from the second conducting plate 2, of the copper gasket 6. One end of the annular connecting portion 61 close to the second conducting plate 2 abuts against the second conducting plate 2. It can be thought that the copper gasket 6 is used as a connection joint of the second conducting plate 2, so that the second conducting plate 2 is conveniently connected with the IGBT spring piece, the annular connecting portion 61 increases the connection area between the copper gasket 6 and the second conducting plate 2 and the connection area between the copper gasket 6 and the IGBT spring piece, and the connection is more reliable and stable due to larger accessible current.
The utility model provides an overlap joint structure convenient to IGBT shell fragment is connected opens connecting hole 31 on through insulating film 3 and makes a current conducting plate 1 direct and IGBT shell fragment overlap joint, adopts insulating gasket 7 to fill in the hole of stepping down 12, and rethread insulating banding 8 carries out formula hot pressing banding that sinks, reaches insulating requirement and has sufficient distance to dodge the IGBT shell fragment, has realized having reduced the use of copper gasket 6 in the installation noninterference, has improved production efficiency.
The above description is only for the preferred embodiment of the present invention and should not be construed as limiting the scope of the present invention, and any modification, equivalent replacement or improvement within the spirit of the present invention is encompassed by the claims of the present invention.

Claims (8)

1. The utility model provides an overlap joint structure convenient to IGBT shell fragment is connected which characterized in that: the lap joint structure convenient for connecting the IGBT shrapnel comprises a first conducting plate and a second conducting plate which are arranged in a stacked mode, a first insulating film, a second insulating film, a third insulating film and a copper gasket, wherein the first insulating film is attached to the outer side of the first conducting plate, the second insulating film is attached to the outer side of the second conducting plate, the third insulating film is attached to the position between the first conducting plate and the second conducting plate, the first insulating film, the first conducting plate and the third insulating film sequentially penetrate through the first insulating film, a first lap joint hole is formed in the first conducting plate, a connecting hole communicated with the first lap joint hole is formed in the first insulating film, a abdicating hole for the copper gasket to penetrate through is formed in the first conducting plate, an annular gap is reserved between the inner wall of the abdicating hole and the outer wall of the copper gasket, an insulating gasket is arranged in the abdicating, one end of the copper gasket, which is close to the second conducting plate, is inserted into the second overlap hole and is connected with the second overlap hole.
2. The lap joint structure convenient for connecting of IGBT shrapnel as claimed in claim 1, characterized in that: the thickness of the insulating gasket is 50% -70% of the thickness of the conductive plate.
3. The lap joint structure convenient for connecting of IGBT shrapnel as claimed in claim 1, characterized in that: the surface of the copper gasket, which is far away from the two sides of the current conducting plate, does not protrude out of the surface of the first current conducting plate, which is far away from the two sides of the current conducting plate.
4. The lap joint structure convenient for connecting of IGBT shrapnel as claimed in claim 1, characterized in that: the surface of one side of the insulating edge sealing, which is far away from the insulating gasket, is lower than the surfaces of two sides of the copper gasket, which are far away from the conductive plate.
5. The lap joint structure convenient for connecting of IGBT shrapnel as claimed in claim 1, characterized in that: the aperture of the connecting hole is larger than that of the first overlap hole.
6. The lap joint structure convenient for connecting of IGBT shrapnel as claimed in claim 1, characterized in that: the copper gasket is the tube-shape just the circumference outside that the one end of current conducting plate two was kept away from to the copper gasket is equipped with annular connecting portion.
7. The lap joint structure convenient for connecting of IGBT shrapnel as claimed in claim 6, characterized in that: one end of the annular connecting part close to the second conducting plate abuts against the second conducting plate.
8. The lap joint structure convenient for connecting of IGBT shrapnel as claimed in claim 1, characterized in that: the connecting hole includes any one of square hole, circular hole, oval-shaped hole and triangle-shaped hole.
CN201920992354.7U 2019-06-28 2019-06-28 Lap joint structure convenient for IGBT (insulated Gate Bipolar transistor) elastic sheet connection Active CN210349828U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201920992354.7U CN210349828U (en) 2019-06-28 2019-06-28 Lap joint structure convenient for IGBT (insulated Gate Bipolar transistor) elastic sheet connection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920992354.7U CN210349828U (en) 2019-06-28 2019-06-28 Lap joint structure convenient for IGBT (insulated Gate Bipolar transistor) elastic sheet connection

Publications (1)

Publication Number Publication Date
CN210349828U true CN210349828U (en) 2020-04-17

Family

ID=70192195

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201920992354.7U Active CN210349828U (en) 2019-06-28 2019-06-28 Lap joint structure convenient for IGBT (insulated Gate Bipolar transistor) elastic sheet connection

Country Status (1)

Country Link
CN (1) CN210349828U (en)

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