CN210349794U - Semiconductor storage device - Google Patents
Semiconductor storage device Download PDFInfo
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- CN210349794U CN210349794U CN201921105016.3U CN201921105016U CN210349794U CN 210349794 U CN210349794 U CN 210349794U CN 201921105016 U CN201921105016 U CN 201921105016U CN 210349794 U CN210349794 U CN 210349794U
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- conductive
- accommodating cavity
- storage device
- semiconductor storage
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Abstract
The embodiment of the utility model discloses semiconductor strorage device. The semiconductor storage device includes: the conductive accommodating cavity is used for storing the semiconductor device and collecting electric charges capable of interfering the semiconductor device in the environment; and the guiding structure is connected with the conductive accommodating cavity and used for guiding out the charges collected on the conductive accommodating cavity.
Description
Technical Field
The embodiment of the utility model provides a relate to the integrated circuit field, in particular to semiconductor strorage device.
Background
In the field of integrated circuits, static electricity adsorbed on the surface of a semiconductor device can cause damage to the semiconductor device and influence subsequent processes, thereby reducing the quality of the semiconductor device.
Disclosure of Invention
In view of the above, an embodiment of the present invention provides a semiconductor storage device, including:
the conductive accommodating cavity is used for storing the semiconductor device and collecting electric charges capable of interfering the semiconductor device in the environment;
and the guiding structure is connected with the conductive accommodating cavity and used for guiding out the charges collected on the conductive accommodating cavity.
Optionally, the conductive accommodating chamber includes:
the shell is used for forming the conductive accommodating cavity;
a conductive support supported within the housing.
Optionally, a plurality of the conductive brackets are arranged in parallel in the conductive accommodating cavity; an accommodating area is formed between two adjacent conductive supports and used for storing the semiconductor device;
the derivation structure includes:
and the conductive connecting body is positioned in the shell and is used for connecting the conductive bracket.
Optionally, the deriving structure further comprises:
the conductive protrusion is connected with the conductive connector, passes through the hole in the shell and extends from the inside of the shell to the outside of the shell so as to lead out the electric charges collected on the conductive accommodating cavity.
Optionally, the conductive protrusions are symmetrically distributed on the housing.
Optionally, the conductive support has a notch, and the semiconductor device stored on the conductive support is suspended at the notch for being extracted from the conductive accommodating cavity.
Optionally, the housing comprises: and the transparent area is used as a window for observing the inside of the conductive accommodating cavity.
Optionally, the material for manufacturing the conductive accommodating cavity and the lead-out structure includes: a conductive plastic.
Optionally, the semiconductor storage device further comprises:
the opening is arranged on the cavity of the conductive accommodating cavity and used for the semiconductor storage device to enter and exit the conductive accommodating cavity;
a lid that closes the opening when nested over the opening; when separated from the opening, the opening is open.
Optionally, the semiconductor storage device further comprises:
and the handle is fixed outside the conductive accommodating cavity and is used for a user to grab the semiconductor storage device.
Compared with a semiconductor storage device without charge collection and derivation, the embodiment of the disclosure collects charges interfering with the semiconductor device in the environment by using the conductive accommodating cavity for storing the semiconductor device, and derives the charges collected by the conductive accommodating cavity by using the derivation structure connected with the conductive accommodating cavity, so that charges remaining on the surface of the semiconductor device stored in the semiconductor storage device can be eliminated, damage to the semiconductor device caused by excessive accumulation of environmental charges on the semiconductor device is reduced, influence of the charges on a subsequent process of the semiconductor device is reduced, and the performance of the semiconductor device is improved.
Drawings
FIG. 1 is a first schematic diagram of a semiconductor storage device according to an exemplary embodiment;
FIG. 2 is a first schematic view of a semiconductor storage device and a semiconductor device according to an exemplary embodiment;
FIG. 3 is a second schematic view of a semiconductor storage device and a semiconductor device according to an exemplary embodiment;
FIG. 4 is a first schematic diagram of a conductive bracket and a conductive connector provided in accordance with an exemplary embodiment;
FIG. 5 is a second schematic diagram of a conductive bracket and a conductive connector provided in accordance with an exemplary embodiment;
FIG. 6 is a second schematic view of a semiconductor storage device provided in accordance with an exemplary embodiment;
FIG. 7 is a third schematic view of a conductive bracket and conductive connector provided in accordance with an exemplary embodiment;
FIG. 8 is a third schematic view of a semiconductor storage device provided in accordance with an exemplary embodiment;
fig. 9 is a fourth schematic view of a semiconductor storage device provided in accordance with an exemplary embodiment.
Detailed Description
The technical solution of the present invention will be further elaborated with reference to the drawings and the embodiments. While exemplary implementations of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The present invention is more particularly described in the following paragraphs with reference to the accompanying drawings by way of example. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
In the embodiment of the present invention, the term "a is connected to B" includes A, B where a is connected to B in contact with each other, or A, B where a is connected to B in a non-contact manner with other components interposed therebetween.
In the embodiments of the present invention, the terms "first", "second", and the like are used for distinguishing similar objects, and are not necessarily used for describing a particular order or sequence.
The technical means described in the embodiments of the present invention may be arbitrarily combined without conflict.
The present embodiment provides a semiconductor storage device 100, including:
the conductive accommodating cavity is used for storing the semiconductor device and collecting electric charges which can interfere the semiconductor device in the environment;
and the guiding structure is connected with the conductive accommodating cavity and used for guiding out the charges collected on the conductive accommodating cavity.
For example, the shape of the conductive receiving cavity may include: regular shapes or irregular shapes. For example, the conductive receiving cavity may be cylindrical, rectangular parallelepiped, square, or the like. Here, the size of the conductive accommodating cavity is larger than that of the semiconductor device, so that when the semiconductor device is placed in the conductive accommodating cavity, a gap between the conductive accommodating cavity and the semiconductor device is enough to provide enough activity space for a carrier for grabbing the semiconductor device to move.
Illustratively, the derivation structure may include a layered structure, a columnar structure, a mesh structure, and the like. Illustratively, when the derivation structure is a layered structure, one side of the derivation structure contacts with the first side of the conductive accommodation cavity and the conductive accommodation cavity, and the second side of the derivation structure faces the outside of the conductive accommodation cavity. When the second side of the lead-out structure is in contact with other grounded conductors, the lead-out structure leads out the charges collected on the conductive accommodating cavity. Here, the first side of the lead-out structure and the second side of the lead-out structure are opposite sides that are disposed opposite to each other.
Illustratively, the semiconductor device may include: wafer (wafer).
For example, as shown in fig. 1, the semiconductor storage device 100 may be placed on the conductive device 300 or the conductive shelf 400, such that the guiding structure of the semiconductor storage device 100 is in contact with the conductive device 300 or the conductive shelf 400, and the conductive device or the conductive shelf is grounded, such that the guiding structure guides the charges in the conductive receiving cavity to the ground through the conductive device 300 or the conductive shelf 400.
Compared with a semiconductor storage device which does not collect and lead out charges, the embodiment of the disclosure collects charges in the environment or on the surface of the semiconductor device by using the conductive accommodating cavity for storing the semiconductor device, and leads out the charges collected by the conductive accommodating cavity by using the lead-out structure connected with the conductive accommodating cavity, so that charges remaining on the surface of the semiconductor device stored in the semiconductor storage device can be eliminated, damage to the semiconductor device caused by excessive accumulation of environmental charges on the semiconductor device is reduced, influence of the charges on subsequent processes of the semiconductor device is reduced, and the performance of the semiconductor device is improved.
In one embodiment, the conductive receiving chamber includes:
a housing 110 for forming a conductive receiving chamber;
and a conductive bracket 120 supported within the housing.
Exemplarily, fig. 2 shows a schematic diagram of a partial region of a semiconductor device located in a conductive receiving cavity. Fig. 3 shows a schematic view of the semiconductor device 200 with all regions thereof located within the conductive receiving cavity. When the semiconductor device is placed in the conductive accommodating cavity, a partial region of the semiconductor device is in contact with the shell of the conductive accommodating cavity, and at least a partial region of the semiconductor device is in contact with the conductive support.
In the embodiment of the disclosure, the conductive support is arranged in the shell forming the conductive accommodating cavity, so that the contact area between the semiconductor device and the conductive accommodating cavity is increased, the effect of collecting charges capable of interfering the semiconductor device by the conductive accommodating cavity is improved, the quantity of the charges remaining on the surface of the semiconductor device is further favorably eliminated, the damage of the semiconductor device caused by excessive accumulation of environmental charges on the semiconductor device is reduced, and the performance of the semiconductor device is improved.
In one embodiment, a plurality of conductive brackets are arranged in parallel in the conductive accommodating cavity; an accommodating area is formed between two adjacent conductive supports and used for storing a semiconductor device;
the derivation structure includes:
and the conductive connecting body 130 is positioned in the shell and is used for connecting the conductive bracket 120.
Illustratively, fig. 4 shows a schematic diagram of a conductive support 120 and a conductive connector 130. In order to improve the effect of eliminating the surface charges of each semiconductor device stored in the conductive accommodating cavity, a plurality of parallel conductive brackets may be arranged in parallel in the conductive accommodating cavity. It can be understood that the number of the conductive brackets can be set according to the sizes of the conductive accommodating cavity and the semiconductor device, so as to ensure that the size of the accommodating area between two adjacent conductive brackets is larger than that of the semiconductor device.
The embodiment of the disclosure arranges a plurality of conductive supports in the conductive accommodating cavity, and connects the conductive supports by the conductive connecting body, so that the semiconductor storage device can simultaneously conduct charge derivation on a plurality of semiconductor devices stored in the semiconductor storage device.
In one embodiment, as shown in fig. 5, the deriving structure further comprises:
and the conductive protrusion 140 is connected with the conductive connector 130, and the conductive protrusion leads the electric charges collected on the conductive accommodating cavity from the inside of the shell to the outside of the shell through the hole on the shell.
Illustratively, FIG. 6 shows a schematic view of a semiconductor storage device. As shown in fig. 6, the bottom of the housing is provided with a hole, so that the conductive protrusion extends from the inside of the housing to the outside of the housing, and is connected to other grounded conductive devices outside through the conductive protrusion, so as to lead out the charges collected on the conductive accommodating cavity.
The embodiment of this disclosure is through setting up electrically conductive protruding, only need set up on the casing with the hole of electrically conductive protruding size looks adaptation can be used for deriving the window of electric charge with providing the derivation structure, compare in set up with the regional derivation electric charge of deriving structure size looks adaptation, reduced the size of trompil on the casing, reduced the influence to casing intensity, improved semiconductor strorage device's intensity.
In one embodiment, the conductive bumps 140 are symmetrically distributed on the housing.
Compared with the case that the plurality of conductive protrusions are randomly arranged on the shell, in the embodiment of the disclosure, the conductive protrusions which are symmetrically distributed are arranged on the shell, and the holes which are arranged on the shell and are matched with the conductive protrusions are also symmetrically distributed, so that the influence of the arrangement holes on the strength of the shell is further reduced, and the strength of the semiconductor storage device is improved.
In one embodiment, the conductive support 120 has a gap, wherein the semiconductor device stored on the conductive support is suspended at the position of the gap for extracting the semiconductor device from the conductive accommodating cavity.
In the embodiment of the present disclosure, as shown in fig. 7, the conductive support has a notch, the semiconductor device stored on the conductive support is suspended at the notch, and when the stored semiconductor device needs to be taken out from the semiconductor storage device, the carrier for extracting the semiconductor device extracts the semiconductor device through the notch.
The embodiment of the disclosure ensures the convenience of extracting the semiconductor device by arranging the notch on the conductive support.
In one embodiment, as shown in fig. 8, the housing 110 includes: and a transparent area 111 as a window for observing the inside of the conductive accommodating cavity.
Illustratively, the material forming the transparent region may include: a transparent plastic. The transparent region may be located in at least one region of the top, side walls or bottom of the housing. For example, when the transparent region is disposed on the sidewall of the housing, it can be used as a window for observing the number of semiconductor devices stored in the conductive accommodating cavity.
In one embodiment, the material for forming the conductive receiving cavity and the lead-out structure comprises: a conductive plastic.
In one embodiment, the semiconductor storage device further comprises:
the opening is arranged on the cavity body of the conductive accommodating cavity and used for the semiconductor storage device to enter and exit the conductive accommodating cavity;
a cover 150 that, when nested over the opening, closes the opening; when separated from the opening, the opening is open.
Illustratively, a groove is provided around the opening, and a second protrusion adapted to the groove is provided on the cover 150. When the second bulge is nested in the groove, the cover body is nested on the opening, the opening is closed, and the shell and the cover body form a sealed space. When the second protrusion is separated from the groove, the cover body is separated from the opening, the opening is opened, and the semiconductor device can enter and exit the semiconductor accommodating cavity through the opening.
In one embodiment, as shown in fig. 9, the semiconductor storage device further comprises:
and a handle 160 fixed outside the conductive accommodating cavity for a user to grasp the semiconductor storage device.
For example, the semiconductor storage device may include two handles respectively fixed to two surfaces of the conductive accommodating chamber, which are oppositely disposed. The user can grab the semiconductor storage device through the handle, and convenience is provided for moving the semiconductor storage device.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and system may be implemented in other ways. The above description is only the specific embodiments of the present invention, but the scope of the present invention is not limited thereto. Those skilled in the art can easily conceive of changes or substitutions within the technical scope of the present disclosure, and all such changes or substitutions are intended to be included within the scope of the present disclosure. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A semiconductor storage device, comprising:
the conductive accommodating cavity is used for storing the semiconductor device and collecting electric charges capable of interfering the semiconductor device in the environment;
and the guiding structure is connected with the conductive accommodating cavity and used for guiding out the charges collected on the conductive accommodating cavity.
2. The semiconductor storage device of claim 1, wherein the conductive housing chamber comprises:
the shell is used for forming the conductive accommodating cavity;
a conductive support supported within the housing.
3. The semiconductor storage device of claim 2,
a plurality of conductive brackets are arranged in the conductive accommodating cavity in parallel; an accommodating area is formed between two adjacent conductive supports and used for storing the semiconductor device;
the derivation structure includes:
and the conductive connecting body is positioned in the shell and is used for connecting the conductive bracket.
4. The semiconductor storage device of claim 3, wherein the lead-out structure further comprises:
the conductive protrusion is connected with the conductive connector, passes through the hole in the shell and extends from the inside of the shell to the outside of the shell so as to lead out the electric charges collected on the conductive accommodating cavity.
5. The semiconductor storage device of claim 4,
the conductive bulges are symmetrically distributed on the shell.
6. The semiconductor storage device of claim 2,
the conductive support is provided with a gap, and the semiconductor device stored on the conductive support is suspended at the position of the gap so as to be extracted from the conductive accommodating cavity.
7. The semiconductor storage device of claim 2, wherein the housing comprises:
and the transparent area is used as a window for observing the inside of the conductive accommodating cavity.
8. The semiconductor storage device of claim 1,
the materials for manufacturing the conductive accommodating cavity and the guiding structure comprise: a conductive plastic.
9. The semiconductor storage device of claim 1, further comprising:
the opening is arranged on the cavity of the conductive accommodating cavity and used for the semiconductor storage device to enter and exit the conductive accommodating cavity;
a lid that closes the opening when nested over the opening; when separated from the opening, the opening is open.
10. The semiconductor storage device of claim 1, further comprising:
and the handle is fixed outside the conductive accommodating cavity and is used for a user to grab the semiconductor storage device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921105016.3U CN210349794U (en) | 2019-07-12 | 2019-07-12 | Semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201921105016.3U CN210349794U (en) | 2019-07-12 | 2019-07-12 | Semiconductor storage device |
Publications (1)
Publication Number | Publication Date |
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CN210349794U true CN210349794U (en) | 2020-04-17 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201921105016.3U Active CN210349794U (en) | 2019-07-12 | 2019-07-12 | Semiconductor storage device |
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CN (1) | CN210349794U (en) |
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2019
- 2019-07-12 CN CN201921105016.3U patent/CN210349794U/en active Active
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