CN210272315U - Diode with compression-resistant outer layer - Google Patents
Diode with compression-resistant outer layer Download PDFInfo
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- CN210272315U CN210272315U CN201921636266.XU CN201921636266U CN210272315U CN 210272315 U CN210272315 U CN 210272315U CN 201921636266 U CN201921636266 U CN 201921636266U CN 210272315 U CN210272315 U CN 210272315U
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Abstract
The utility model discloses a diode with resistance to compression is outer, including shell body and semiconductor block, the both ends of semiconductor block are equipped with the connecting guide arm, semiconductor block outer wall is equipped with the shell body of metal material, and the shape phase-match of outer shells inner wall's shape and semiconductor block, outer shells inner wall upper end is equipped with the cushion, and is equipped with the side cushion block to the side of the outer shells inner wall, the shell body is the elastic support through last cushion and side cushion block and semiconductor block and is connected, and the upper and lower extreme of shell body and subplate is equipped with the slot, and is equipped with the connecting block in the slot, the connecting block is lock fixed connection through slot and shell body and subplate. The shape of the outer shell of the diode with the pressure-resistant outer layer is matched with that of the semiconductor block, so that the outer shell can be sleeved on the outer wall of the semiconductor block, an upper cushion block and a side cushion block are arranged on the inner wall of the outer shell, and the upper cushion block and the side cushion block are attached to the semiconductor block, so that the device can play a good protection role.
Description
Technical Field
The utility model relates to a diode technical field specifically is a diode with resistance to compression is outer.
Background
Diodes, electronic components, a device with two electrodes, allow current to flow only in a single direction, and many applications use the rectifying function. And the varactor is used as an electronically tunable capacitor. The current directivity that most diodes have is commonly referred to as the "rectifying" function. The most common function of a diode is to allow current to pass in only a single direction (known as forward biasing) and to block current in the reverse direction. Thus, the diode can be thought of as an electronic version of the check valve.
Early vacuum electron diodes; it is an electronic device capable of conducting current in one direction. The electronic device has a PN junction and two lead terminals inside a semiconductor diode, and has conductivity of unidirectional current according to the direction of applied voltage. Generally, a crystal diode is a p-n junction interface formed by sintering a p-type semiconductor and an n-type semiconductor. Space charge layers are formed on two sides of the interface to form a self-established electric field. When the applied voltage is equal to zero, the diffusion current and the drift current caused by the self-established electric field are equal to each other due to the concentration difference of carriers on both sides of the p-n junction, so that the diode is in an electric balance state, and the characteristic is also the diode characteristic in a normal state.
The diode of current patent number CN201520856331.5, the device can not play the guard action to the diode when using, uses inconveniently, and current one kind has the outer diode of resistance to compression to reach the mesh of registrate protection.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a diode with resistance to compression is outer to the diode that mentions in solving above-mentioned background art can not play the guard action to the diode when using, uses inconvenient problem.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a diode with resistance to compression is outer, includes shell body and semiconductor block, and the both ends of semiconductor block are equipped with the connecting guide pole, semiconductor block outer wall is equipped with the shell body of metal material, and the shape phase-match of shell body inner wall's shape and semiconductor block, shell body inner wall upper end is equipped with the cushion, and shell body inner wall side is equipped with the side cushion, the shell body is the elastic support through last cushion and side cushion and semiconductor block and is connected.
Preferably, the shell body is provided with heat dissipation holes, the heat dissipation holes are of arc structures, and the heat dissipation holes are distributed on the shell body at equal-distance parallel positions.
Preferably, one side of the outer shell is provided with an auxiliary plate, and the auxiliary plate is connected with the outer shell in a turnover manner through a rotating shaft.
Preferably, the upper and lower ends of the outer shell and the subplate are provided with slots, and the slots are internally provided with connecting blocks which are fixedly connected with the outer shell and the subplate in a buckling manner through the slots.
Preferably, the upper end of the auxiliary plate is provided with an upper turning plate, the upper turning plate is movably connected with the auxiliary plate in a turning manner through a connecting hinge, the upper turning plate is provided with a fixed buckling block, one end of the semiconductor block is provided with a fixed buckling groove, and the semiconductor block is fixedly connected with the upper turning plate in a buckling manner through the fixed buckling block in the fixed buckling groove.
Preferably, the shell body is provided with a magnetic connecting block, and the shell body is in magnetic fixed connection with one side of the upward turning plate through the magnetic connecting block.
Compared with the prior art, the beneficial effects of the utility model are that: the shape of the outer shell of the diode with the pressure-resistant outer layer is matched with that of the semiconductor block, so that the outer shell can be sleeved on the outer wall of the semiconductor block, an upper cushion block and a side cushion block are arranged on the inner wall of the outer shell, and the upper cushion block and the side cushion block are attached to the semiconductor block, so that the device can play a good protection role.
Drawings
FIG. 1 is a front view of a diode with a compressive outer layer according to the present invention;
FIG. 2 is a cross-sectional expanded view of a diode with a compressive outer layer according to the present invention;
fig. 3 is a top view of the diode with the anti-pressure outer layer of the present invention.
In the figure: 1. the semiconductor module comprises an outer shell, 2, connecting guide rods, 3, semiconductor blocks, 4, heat dissipation holes, 5, an upper cushion block, 6, a magnetic connecting block, 7, a fixing buckle groove, 8, a fixing buckle block, 9, an upper turning plate, 10, a connecting hinge, 11, an auxiliary plate, 12, a rotating shaft, 13, a side cushion block, 14, a connecting block, 15 and a slot.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-3, the present invention provides a technical solution: a diode with a pressure-resistant outer layer comprises an outer shell 1, connecting guide rods 2, a semiconductor block 3, radiating holes 4, an upper cushion block 5, a magnetic connecting block 6, a fixing buckle groove 7, a fixing buckle block 8, an upper turning plate 9, a connecting loose leaf 10, an auxiliary plate 11, a rotating shaft 12, a side cushion block 13, a connecting block 14 and a slot 15, wherein the connecting guide rods 2 are arranged at two ends of the semiconductor block 3, the outer wall of the semiconductor block 3 is provided with the outer shell 1 made of metal materials, the shape of the inner wall of the outer shell 1 is matched with that of the semiconductor block 3, the radiating holes 4 are arranged on the outer shell 1 and are of arc structures, the radiating holes 4 are distributed on the outer shell 1 at equal-distance parallel positions, so that the radiating holes 4 of the diode can play an effective radiating role, the auxiliary plate 11 is arranged at one side of the outer shell 1, and the auxiliary plate 11 is in turnover movable connection with the outer shell, the upper end and the lower end of the outer shell 1 and the auxiliary plate 11 are provided with slots 15, the slots 15 are internally provided with connecting blocks 14, the connecting blocks 14 are fixedly connected with the outer shell 1 and the auxiliary plate 11 in a buckling manner through the slots 15, so that the device can be turned through the connecting blocks 14 to conveniently dismantle the outer shell 1, the outer shell 1 is provided with a magnetic connecting block 6, the outer shell 1 is fixedly connected with one side of the upper turning plate 9 through the magnetic connecting block 6 in a magnetic manner, so that the device can assist the outer shell 1 to be connected with the upper turning plate 9 through the magnetic connecting block 6, the upper end of the inner wall of the outer shell 1 is provided with an upper cushion block 5, the side surface of the inner wall of the outer shell 1 is provided with a side cushion block 13, the outer shell 1 is elastically supported and connected with the semiconductor block 3 through the upper cushion block 5 and the side cushion block 13, the upper turning plate, one end of the semiconductor block 3 is provided with a fixed buckle slot 7, and the semiconductor block 3 is fixedly connected with the upper turning plate 9 in a buckling manner through a fixed buckle block 8 in the fixed buckle slot 7, so that the upper turning plate 9 can be connected more stably.
The working principle is as follows: when the diode with the pressure-resistant outer layer is used, the device is firstly taken out, then the outer shell 1 of the device is sleeved on the outer wall of the semiconductor block 3, then the auxiliary plate 11 of the device is upwards turned through the rotating shaft 12, so that the auxiliary plate 11 is attached to the semiconductor block 3, then the upper turning plate 9 of the device is inwards turned through the connecting hinge 10, then the upper turning plate 9 of the device is fixed through the matching of the fixing buckle groove 7 and the fixing buckle block 8, when the device is fixed, the upper turning plate 9 can be magnetically spliced through the magnetic connecting block 6, then the connecting block 14 of the device is inserted into the slot 15, so that the device is vertically closed, when the device is used, the device can be protected through the outer shell 1 and the auxiliary plate 11, and the inner semiconductor 3 can be protected through the upper cushion block 5 and the side cushion block 13 on the inner wall, and the heat dissipation holes 4 on the outer walls of the outer shell 1 and the auxiliary plate 11 of the device dissipate heat, so that the use is more convenient, namely the use process of the diode with the pressure-resistant outer layer.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the invention.
Claims (6)
1. The utility model provides a diode with resistance to compression is outer, includes shell body (1) and semiconductor block (3), and the both ends of semiconductor block (3) are equipped with connecting guide arm (2), its characterized in that: semiconductor block (3) outer wall is equipped with metal material's shell body (1), and the shape phase-match of the shape of shell body (1) inner wall and semiconductor block (3), shell body (1) inner wall upper end is equipped with cushion (5), and shell body (1) inner wall side is equipped with side cushion (13), shell body (1) is the elastic support through last cushion (5) and side cushion (13) and semiconductor block (3) and is connected.
2. A diode with a compressive outer layer as claimed in claim 1, wherein: the radiating holes (4) are formed in the outer shell (1), the radiating holes (4) are of arc-shaped structures, and the radiating holes (4) are distributed on the outer shell (1) at equal-distance parallel positions.
3. A diode with a compressive outer layer as claimed in claim 1, wherein: one side of the outer shell (1) is provided with an auxiliary plate (11), and the auxiliary plate (11) is connected with the outer shell (1) in a turning and movable manner through a rotating shaft (12).
4. A diode with a compressive outer layer as claimed in claim 1, wherein: the upper and lower ends of the outer shell (1) and the subplate (11) are provided with slots (15), connecting blocks (14) are arranged in the slots (15), and the connecting blocks (14) are fixedly connected with the outer shell (1) and the subplate (11) in a buckling manner through the slots (15).
5. A diode with a compressive outer layer as claimed in claim 3, wherein: the semiconductor block turning device is characterized in that an upper turning plate (9) is arranged at the upper end of the auxiliary plate (11), the upper turning plate (9) is connected with the auxiliary plate (11) in a turning and movable mode through a connecting hinge (10), a fixing buckling block (8) is arranged on the upper turning plate (9), a fixing buckling groove (7) is formed in one end of the semiconductor block (3), and the semiconductor block (3) is fixedly connected with the upper turning plate (9) in the fixing buckling groove (7) through the fixing buckling block (8).
6. A diode with a stress-resistant outer layer according to claim 5, wherein: the magnetic connecting block (6) is arranged on the outer shell (1), and the outer shell (1) is fixedly connected with one side of the upper turning plate (9) through the magnetic connecting block (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921636266.XU CN210272315U (en) | 2019-09-29 | 2019-09-29 | Diode with compression-resistant outer layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921636266.XU CN210272315U (en) | 2019-09-29 | 2019-09-29 | Diode with compression-resistant outer layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210272315U true CN210272315U (en) | 2020-04-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921636266.XU Active CN210272315U (en) | 2019-09-29 | 2019-09-29 | Diode with compression-resistant outer layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210272315U (en) |
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2019
- 2019-09-29 CN CN201921636266.XU patent/CN210272315U/en active Active
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