CN210166349U - Ultrasonic probe capable of transmitting multi-frequency signals - Google Patents
Ultrasonic probe capable of transmitting multi-frequency signals Download PDFInfo
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- CN210166349U CN210166349U CN201920741688.7U CN201920741688U CN210166349U CN 210166349 U CN210166349 U CN 210166349U CN 201920741688 U CN201920741688 U CN 201920741688U CN 210166349 U CN210166349 U CN 210166349U
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- 239000000523 sample Substances 0.000 title claims abstract description 21
- 235000012431 wafers Nutrition 0.000 claims abstract description 86
- 238000001914 filtration Methods 0.000 claims abstract description 6
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 238000002604 ultrasonography Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 18
- 238000001514 detection method Methods 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 38
- 239000004033 plastic Substances 0.000 description 8
- 238000007689 inspection Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
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- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 239000002344 surface layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
The utility model discloses an ultrasonic probe that can launch multifrequency signal. The ultrasonic probe of the utility model comprises a piezoelectric wafer assembly; the piezoelectric wafer assembly comprises a high-frequency wafer, a medium-frequency wafer and a low-frequency wafer which are sequentially stacked from top to bottom, and adjacent wafers are isolated by a filter layer; the first filtering layer between the low-frequency wafer and the intermediate-frequency wafer and the outer side surface of the intermediate-frequency wafer are coated with a low-frequency matching layer, the second filtering layer between the intermediate-frequency wafer and the high-frequency wafer and the outer side surface of the high-frequency wafer are coated with an intermediate-frequency matching layer, and the upper surfaces of the intermediate-frequency matching layer and the high-frequency wafer are coated with a high-frequency matching layer. The utility model can realize the full-depth coverage detection of the basin-type insulator with high attenuation characteristic and large depth range only by once scanning, and has high efficiency characteristic; meanwhile, the high-frequency wafer can also receive harmonic signals generated by the low-frequency wafer, so that the defect resolution of a region with larger depth is guaranteed.
Description
Technical Field
The utility model belongs to the technical field of nondestructive test sensor, especially an ultrasonic probe that can launch multifrequency signal.
Background
The basin insulator is an important part of gas insulated metal enclosed switchgear (GIS) of a transformer substation, plays an important role in isolating adjacent gas chambers, supporting conductors and insulating, and is a foundation for ensuring safe and reliable operation of a power grid. Due to the existence of internal defects of the insulator, the non-standard field installation and fastening operation and other factors, the insulator is broken and the GIS air leakage accident is caused, so that the safe and stable operation of the power grid equipment is greatly influenced.
The insulator detection mainly comprises two types of delivery inspection and in-service inspection. The factory inspection mainly adopts the X-ray imaging technology to detect the internal air holes, but after the basin-type insulator is installed and cured in a transformer substation, the radiation detection is not applicable any more because the transparent surface is sealed in the GIS shell. In-service inspection is mainly realized by monitoring partial discharge and online monitoring of SF6 gas, but the partial discharge detection is only sensitive to defects close to the central conductor and is not sensitive to defects at the edge of the basin-type insulator; although the SF6 gas online monitoring contains rich insulation state information, the SF6 gas online monitoring cannot be directly used for evaluating the structural integrity of the basin-type insulator, and the fault part cannot be accurately judged and replaced.
The ultrasonic detection technology is a feasible means for detecting the internal defects of the in-service basin-type insulator. However, the material of the basin-type insulator is generally formed by taking epoxy resin as a matrix and adding second-phase particles such as aluminum oxide and the like for solidification, and the material has high attenuation characteristic and the acoustic attenuation coefficient of the material is as high as 0.3 dB/mm/MHz; and the diameter of the basin-type insulator is larger, and is generally in the range of 500mm-1000 mm. For an in-service insulator, the surface which can be contacted by the ultrasonic probe only has an outer circular surface part. At this time, in order to take account of the detection resolution and the coverage depth, the ultrasonic signals with different frequencies must be adopted for the partition combination detection, the lower frequency signal can cover the part with the greater depth, the higher frequency signal can ensure the detection resolution of the shallow surface layer, and the high frequency wafer can also receive the high-order harmonic signal generated by the low frequency probe, so that the resolution of the large depth range is improved.
However, at present, no ultrasonic special sensor which can detect in a high-attenuation material such as a basin-shaped insulator and a large depth range in a subarea mode and can simultaneously emit signals of multiple frequencies exists.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that overcome the defect that above-mentioned prior art exists, provide a multifrequency signal's ultrasonic probe can emit to cooperation basin formula insulator automated inspection realizes that basin formula insulator's full coverage and high efficiency detect.
In order to solve the technical problem, the utility model adopts the following technical scheme: an ultrasonic probe capable of emitting multi-frequency signals comprises a piezoelectric wafer assembly;
the piezoelectric wafer assembly comprises a high-frequency wafer, a medium-frequency wafer and a low-frequency wafer which are sequentially stacked from top to bottom, and adjacent wafers are isolated by a filter layer; the first filter layer between the low-frequency wafer and the intermediate-frequency wafer and the outer side surface of the intermediate-frequency wafer are coated with a low-frequency matching layer, the second filter layer between the intermediate-frequency wafer and the high-frequency wafer and the outer side surface of the high-frequency wafer are coated with an intermediate-frequency matching layer, and the upper surfaces of the intermediate-frequency matching layer and the high-frequency wafer are coated with a high-frequency matching layer;
the thickness of the first filter layer is the difference between the thickness of the low-frequency matching layer and the thickness of the intermediate-frequency chip, the thickness of the second filter layer is the difference between the thickness of the intermediate-frequency matching layer and the thickness of the high-frequency chip, and the length and width of the high-frequency matching layer are equal to those of the low-frequency chip.
Preferably, the length and width dimensions of the first filter layer are equal to those of the intermediate frequency chip, and the length and width dimensions of the second filter layer are equal to those of the high frequency chip.
Preferably, the piezoelectric wafer assembly is fixedly provided with a shell and an acoustic transmission wedge block, the shell is provided with three cable connectors, and the three cable connectors are respectively connected with the positive electrode and the negative electrode of the three wafers through leads.
Preferably, the housing and the piezoelectric wafer assembly are fixed by pure epoxy resin.
The utility model has the advantages of that: the utility model can realize the full-depth coverage detection of the basin-type insulator with high attenuation characteristic and large depth range only by once scanning, and has high efficiency characteristic; meanwhile, the high-frequency wafer can also receive harmonic signals generated by the low-frequency wafer, so that the defect resolution of a region with larger depth is guaranteed; ultrasonic probe not only is applicable to the basin insulator, is equally applicable to the detection of other types's high sound attenuation industry parts moreover.
Drawings
Fig. 1 is a schematic structural diagram of a piezoelectric wafer assembly according to the present invention;
fig. 2 is a schematic view of the ultrasonic probe of the present invention;
fig. 3 is a frequency spectrum diagram of the low frequency wafer transmitting ultrasonic signal of the present invention;
FIG. 4 is a frequency spectrum diagram of the ultrasonic signal emitted from the IF wafer according to the present invention;
fig. 5 is a frequency spectrum diagram of the high frequency wafer transmitting ultrasonic signal of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the drawings and examples.
Referring to fig. 1, an ultrasonic probe capable of transmitting a multi-frequency signal includes a piezoelectric wafer assembly including a high frequency wafer 7, a medium frequency wafer 6 and a low frequency wafer 1, which are stacked in sequence from top to bottom, and adjacent wafers are isolated from each other by a filter layer. The first filter layer 5 between the low frequency wafer and the intermediate frequency wafer and the outer side surface (namely, the front, back, left and right side surfaces, excluding the upper surface and the lower bottom surface) of the intermediate frequency wafer are coated with the low frequency matching layer 2, the second filter layer between the intermediate frequency wafer and the high frequency wafer and the outer side surface (namely, the front, back, left and right side surfaces, excluding the upper surface and the lower bottom surface) of the high frequency wafer are coated with the intermediate frequency matching layer 3, and the upper surfaces of the intermediate frequency matching layer and the high frequency wafer are coated with the high frequency matching layer 4.
The thickness of the first filter layer 5 is the difference between the thickness of the low-frequency matching layer 2 and the thickness of the intermediate-frequency chip 6, the thickness of the second filter layer 8 is the difference between the thickness of the intermediate-frequency matching layer 3 and the thickness of the high-frequency chip 7, and the length and width of the high-frequency matching layer 4 are equal to those of the low-frequency chip. The length and width of the first filter layer are equal to those of the intermediate frequency chip, and the length and width of the second filter layer are equal to those of the high frequency chip.
The piezoelectric wafer assembly is fixedly provided with a shell 10 and an acoustic transmission wedge block 11, the shell 10 is provided with three cable connectors 9, and the three cable connectors are respectively connected with the positive and negative electrodes of three wafers (namely high, medium and low frequency wafers) by leads.
The manufacturing process of the ultrasonic probe comprises the following steps:
1) bonding a low-frequency chip on a support table, and bonding a first square plastic die on the low-frequency chip, wherein the area of an inner cavity of the first square plastic die is equal to that of the intermediate-frequency chip, and the height of the inner cavity is slightly higher than that of a corresponding first filter layer;
2) pouring epoxy resin containing second-phase high-density conductive particles and a curing agent into a first square plastic mold cavity, removing the first square plastic mold after high-temperature curing to form a first filter layer between a low-frequency wafer and a medium-frequency wafer, and then grinding the first filter layer to a specified height;
3) bonding the intermediate frequency wafer and the electrode lead thereof on the first filter layer, and then sheathing a second square plastic mold with the inner cavity area equal to the area of the low frequency wafer on the low frequency wafer, wherein the height of the second square plastic mold is slightly higher than the upper surface of the intermediate frequency wafer;
4) pouring epoxy resin containing second-phase low-density non-conductive particles and a curing agent into a second square plastic mold cavity, removing the second square plastic mold after high-temperature curing, and then grinding until the upper surface of the intermediate-frequency wafer is exposed, thereby completing the manufacture of the low-frequency matching layer;
5) according to the same method, the preparation of a second filtering layer and a medium-frequency matching layer between the medium-frequency wafer and the high-frequency wafer and the assembly of the high-frequency wafer and the matching layer thereof are completed;
6) and finally, taking down the assembled piezoelectric wafer assembly from the saddle, installing the shell, the cable joint and the sound-transmitting wedge block, and fixing the shell and the piezoelectric wafer assembly by adopting insulating materials such as pure epoxy resin and the like.
The number of wafers of the ultrasonic probe is not limited to three wafers of high frequency, medium frequency and low frequency, and the ultrasonic probe can be a combination of any multiple frequencies according to the process requirements. According to actual detection requirements, the ultrasonic center frequencies of three frequencies in the embodiment are respectively 0.5MHz, 1MHz and 2MHz, the wafer is made of lead calcium titanate (PZT) materials, the matching layer is made of epoxy resin and aluminum oxide, the filtering layer is made of epoxy resin and tungsten powder, the sound-transmitting wedge block is made of organic glass, the wafer is processed into an arc shape according to the radius of the selected basin-type insulator so as to be well coupled, and finally the probe is combined to obtain the shape as shown in figure 2, and three standard cable connectors are respectively connected with the positive electrode and the negative electrode of the three wafers.
The spectrograms of the three ultrasonic signals transmitted by the probe of this embodiment are measured by using a pulse echo method, as shown in fig. 3, 4 and 5, the measured low, medium and high frequencies are 0.39MHZ, 1.2MHZ and 2.3MHZ, respectively, and the spectrum range well covers the designed center frequency.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (4)
1. An ultrasonic probe capable of transmitting multi-frequency signals is characterized by comprising a piezoelectric wafer assembly;
the piezoelectric wafer assembly comprises a high-frequency wafer (7), a medium-frequency wafer (6) and a low-frequency wafer (1), which are sequentially stacked from top to bottom, and adjacent wafers are isolated by a filter layer; a low-frequency matching layer (2) is coated on the outer side surfaces of a first filtering layer (5) and a medium-frequency wafer (6) which are positioned between a low-frequency wafer (1) and the medium-frequency wafer (6), a medium-frequency matching layer (3) is coated on the outer side surfaces of a second filtering layer (8) and a high-frequency wafer (7) which are positioned between the medium-frequency wafer (6) and the high-frequency wafer (7), and a high-frequency matching layer (4) is coated on the upper surfaces of the medium-frequency matching layer (3) and the high-frequency wafer (7);
the thickness of the first filter layer (5) is the difference between the thickness of the low-frequency matching layer (2) and the thickness of the intermediate-frequency chip (6), the thickness of the second filter layer (8) is the difference between the thickness of the intermediate-frequency matching layer (3) and the thickness of the high-frequency chip (7), and the length and width of the high-frequency matching layer (4) are equal to those of the low-frequency chip (1).
2. An ultrasound probe capable of transmitting multi-frequency signals according to claim 1, wherein the length and width dimensions of the first filter layer (5) are equal to those of the intermediate frequency chip (6), and the length and width dimensions of the second filter layer (8) are equal to those of the high frequency chip (7).
3. The ultrasonic probe capable of emitting multi-frequency signals according to claim 1 or 2, wherein the piezoelectric wafer assembly is fixedly provided with a casing (10) and a sound-transmitting wedge (11), and the casing (10) is provided with three cable connectors (9) respectively connected with the positive electrode and the negative electrode of the three wafers by leads.
4. The ultrasonic probe capable of transmitting multi-frequency signals according to claim 3, wherein the housing and the piezoelectric wafer assembly are fixed by pure epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920741688.7U CN210166349U (en) | 2019-05-22 | 2019-05-22 | Ultrasonic probe capable of transmitting multi-frequency signals |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920741688.7U CN210166349U (en) | 2019-05-22 | 2019-05-22 | Ultrasonic probe capable of transmitting multi-frequency signals |
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| Publication Number | Publication Date |
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| CN210166349U true CN210166349U (en) | 2020-03-20 |
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| CN201920741688.7U Withdrawn - After Issue CN210166349U (en) | 2019-05-22 | 2019-05-22 | Ultrasonic probe capable of transmitting multi-frequency signals |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110261486A (en) * | 2019-05-22 | 2019-09-20 | 杭州意能电力技术有限公司 | A kind of ultrasonic probe emitting multiple-frequency signal and its manufacture craft |
| CN112816558A (en) * | 2021-01-07 | 2021-05-18 | 中国航空制造技术研究院 | Frequency-conversion ultrasonic detection method and device for silicon carbide fiber reinforced composite material |
-
2019
- 2019-05-22 CN CN201920741688.7U patent/CN210166349U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110261486A (en) * | 2019-05-22 | 2019-09-20 | 杭州意能电力技术有限公司 | A kind of ultrasonic probe emitting multiple-frequency signal and its manufacture craft |
| CN110261486B (en) * | 2019-05-22 | 2024-06-11 | 杭州意能电力技术有限公司 | Ultrasonic probe capable of transmitting multi-frequency signals and manufacturing process thereof |
| CN112816558A (en) * | 2021-01-07 | 2021-05-18 | 中国航空制造技术研究院 | Frequency-conversion ultrasonic detection method and device for silicon carbide fiber reinforced composite material |
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Granted publication date: 20200320 Effective date of abandoning: 20240611 |
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