CN210110718U

CN210110718U - Be applied to semiconductor exhaust-gas treatment equipment's waste gas reaction cavity

Info

Publication number: CN210110718U
Application number: CN201920705575.1U
Authority: CN
Inventors: 章文军; 杨春水; 宁腾飞; 陈彦岗; 杨春涛; 王继飞; 张坤; 闫萧; 蔡传涛; 席涛涛; 王磊
Original assignee: Anhui Jingyi Automation Equipment Technology Co Ltd
Current assignee: Anhui Jingyi Automation Equipment Technology Co Ltd
Priority date: 2019-05-17
Filing date: 2019-05-17
Publication date: 2020-02-21
Anticipated expiration: 2029-05-17

Abstract

The utility model discloses a be applied to semiconductor exhaust-gas treatment equipment's waste gas reaction cavity, including inlet tube, outer tube, inner tube, outlet pipe, inlet tube, outer tube and inner tube pass through upper flange and lower flange welded fastening, the outer tube is located the inner tube outside and is formed a cooling chamber between the two, the inlet tube has a plurality of, and the inlet tube is installed in the side of inner tube and is circumference and distributes, and the outer end of inlet tube extends to the outside of outer tube, and it is sealed through isolated pipe between cooling chamber and the inlet tube, outlet pipe and inlet tube are established respectively in outer pipe wall top and below and communicate with each other with the cooling chamber, the side-mounting of lower flange has the intake pipe with the inner tube intercommunication. The waste gas reaction cavity of the semiconductor waste gas treatment equipment has the advantages of excellent heat insulation effect, good sealing property, small heat loss and convenient and quick installation in the using process.

Description

Be applied to semiconductor exhaust-gas treatment equipment's waste gas reaction cavity

Technical Field

The utility model relates to an industrial waste gas treatment's field, concretely relates to semiconductor exhaust-gas treatment equipment's exhaust-gas reaction cavity.

Background

With the increasing prosperity and productivity of the semiconductor industry, semiconductor waste gas is generated in the production process, and the gas has serious harm to human bodies and environment. However, due to the limitation of the internal facilities of semiconductor manufacturers and enterprises, and various demands of waste gas treatment equipment, higher requirements are imposed on the treatment efficiency. Accordingly, one skilled in the art provides an exhaust reaction chamber for use in a semiconductor exhaust treatment device. The existing semiconductor waste gas treatment equipment has a plurality of technical defects: 1. the thick and heavy reaction chamber is inconvenient to maintain, 2, the high temperature inside the reaction chamber causes the external temperature to be too high, and 3, the reaction chamber has poor sealing performance.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a be applied to semiconductor exhaust-gas treatment equipment's exhaust-gas reaction cavity to solve the above-mentioned multinomial defect that leads to among the prior art.

The utility model provides a be applied to semiconductor exhaust-gas treatment equipment's waste gas reaction cavity, includes inlet tube, outer tube, inner tube, outlet pipe and inlet tube, outer tube and inner tube are through last flange and lower flange welded fastening, the outer tube is located the inner tube outside and is formed a cooling chamber between the two, the inlet tube has a plurality of, and the inlet tube is installed in the side of inner tube and is circumference distribution, and the outer end of inlet tube extends to the outside of outer tube, through isolated tube seal between cooling chamber and the inlet tube, outlet pipe and inlet tube are established respectively in outer pipe wall top and below and with the cooling chamber communicate with each other, the side-mounting of lower flange has the intake pipe with the inner tube intercommunication.

Preferably, the inner side of the inner pipe is provided with a heat insulation layer.

Preferably, the insulation layer is composed of a plurality of annular insulation blocks.

Preferably, a quick-clamping flange is arranged at the nozzle of the inlet pipe.

Preferably, the bottom of the lower flange is provided with a T-shaped slotted hole, an air discharge pipe is fixed in the T-shaped slotted hole, the side surface of the air discharge pipe is provided with a plurality of air holes, and the lower end of the T-shaped slotted hole is welded and sealed through a lower flange welding plate and forms a storage cavity for storing gas with the T-shaped slotted hole and the air discharge pipe.

The utility model has the advantages that: the utility model discloses holistic junction is seal weld, so its leakproofness is good, the utility model discloses there is the cooling chamber inside the inner tube between being equipped with insulating layer and inner tube and the outer tube, consequently effectual calorific loss and the good heat-insulating effect of having reduced, be equipped with fast card flange at the inlet tube mouth of pipe, be convenient for installation and later maintenance.

Drawings

Fig. 1 is a front sectional view of the present invention.

Fig. 2 is a top view of the present invention.

Fig. 3 is a schematic structural diagram of the present invention.

Fig. 4 is a schematic structural view of the middle and lower flange portions of the present invention.

Fig. 5 is a cross-sectional view of the lower flange of the present invention.

The device comprises an upper flange 1, an inlet pipe 2, an inlet quick clamping flange 3, an isolation pipe 4, an outer pipe 5, an inner pipe 6, a thermal insulation layer 7, a lower flange 8, a lower flange 9, a lower flange welding plate 10, an air discharging pipe 11, an air inlet pipe 12, an water outlet pipe 13, a water inlet pipe 14, a T-shaped slotted hole 15 and a cooling cavity 15.

Detailed Description

In order to make the technical means, creation features, achievement purposes and functions of the present invention easy to understand, the present invention is further described below with reference to the following embodiments.

As shown in fig. 1 to 5, a waste gas reaction cavity applied to semiconductor waste gas treatment equipment comprises an inlet pipe 2, an outer pipe 5, an inner pipe 6, a water outlet pipe 12 and a water inlet pipe 13, the outer pipe 5 and the inner pipe 6 are welded and fixed through an upper flange 1 and a lower flange 8, the outer pipe 5 is arranged on the outer side of the inner pipe 6, a cooling cavity 15 is formed between the outer pipe 5 and the inner pipe 6, the inlet pipe is provided with a plurality of inlet pipes 2, the inlet pipe 2 is arranged on the side surface of the inner pipe 6 and is circumferentially distributed, the outer end of the inlet pipe 2 extends to the outer side of the outer pipe 5, the cooling cavity 15 and the inlet pipe 2 are sealed through an isolation pipe 4, the water outlet pipe 12 and the water inlet pipe 13 are respectively arranged above and below the wall of the outer pipe 5 and.

In this embodiment, the inner side of the inner tube 6 is provided with a heat insulation layer 7, so that heat conduction loss is reduced.

In the present embodiment, the insulation layer 7 is composed of a plurality of annular insulation blocks which are stacked on each other in the axial direction of the inner pipe 6.

In this embodiment, the mouth of pipe department of inlet tube 2 is equipped with fast calorie of flange 3, has improved the installation effectiveness.

In this embodiment, a T-shaped slot 14 is formed in the bottom of the lower flange 8, an air releasing pipe 10 is fixed in the T-shaped slot 14, a plurality of air holes are formed in the side surface of the air releasing pipe 10, and the lower end of the T-shaped slot 14 is welded and sealed by a lower flange welding plate 9 and forms a storage cavity for storing air with the T-shaped slot 14 and the air releasing pipe 10.

The working principle is as follows: in the semiconductor production process, with the exhaust gas outlet connection on the quick flange 3 of calorie of entering the mouth, make waste gas let in reaction cavity inside through inlet tube 2, every inlet tube 2 all is equipped with isolated pipe 4 all around, and whole reaction cavity's junction all adopts seal welding, therefore this reaction cavity has good sealed effect. The inside insulating layer 7 that is equipped with of reaction cavity, be clearance concentric coordination between insulating layer 7 and the inner tube 6, leave the intermediate layer between outer tube 5 and the inner tube 6 in addition, let in 16 ℃ and the flow is 50 ml/min's cooling water from inlet tube 13 of reaction cavity lateral wall below in process of production, the cooling water can be followed the outlet pipe 12 of reaction cavity lateral wall top and stayed, consequently, can play fine thermal-insulated effect, can be when intracavity temperature 2000 ℃, effectual assurance reaction cavity outer wall temperature is less than 38 ℃. When waste gas lets in the reaction cavity, gas is let in from the intake pipe 11 of lower flange 8 department, and the inside of the pipe inflow inner tube that lets out the trachea for intercept waste gas, the time of extension waste gas in the reaction cavity makes its reaction more thorough.

It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of the invention or which are equivalent to the scope of the invention are embraced by the invention.

Claims

1. A waste gas reaction cavity applied to semiconductor waste gas treatment equipment is characterized by comprising an inlet pipe (2), an outer pipe (5), an inner pipe (6), a water outlet pipe (12) and a water inlet pipe (13), the outer pipe (5) and the inner pipe (6) are welded and fixed through an upper flange (1) and a lower flange (8), the outer pipe (5) is arranged outside the inner pipe (6) and a cooling cavity (15) is formed between the outer pipe and the inner pipe, the inlet pipes (2) are arranged on the side surface of the inner pipe (6) and are distributed in the circumferential direction, the outer ends of the inlet pipes (2) extend to the outer side of the outer pipe, the cooling cavity (15) and the inlet pipes (2) are sealed through the isolation pipe (4), the water outlet pipe (12) and the water inlet pipe (13) are respectively arranged above and below the wall of the outer pipe (5) and communicated with the cooling cavity (15), and an air inlet pipe (11) communicated with the inner pipe (6) is arranged on the side surface of the lower flange (8).

2. The exhaust reaction chamber applied to the semiconductor exhaust treatment equipment according to claim 1, wherein the inner side of the inner pipe (6) is provided with a heat insulation layer (7).

3. The exhaust gas reaction chamber applied to the semiconductor exhaust gas treatment equipment according to claim 2, wherein the heat insulating layer (7) is composed of a plurality of annular heat insulating blocks.

4. The exhaust reaction chamber applied to the semiconductor exhaust treatment equipment according to claim 1, wherein a quick clamping flange (3) is arranged at the mouth of the inlet pipe (2).

5. The exhaust gas reaction chamber applied to the semiconductor exhaust gas treatment equipment according to claim 1, wherein a T-shaped slot (14) is formed in the bottom of the lower flange (8), an air releasing pipe (10) is fixed in the T-shaped slot (14), a plurality of air holes are formed in the side surface of the air releasing pipe (10), and the lower end of the T-shaped slot (14) is welded and sealed through a lower flange welding plate (9) and forms a storage cavity for storing gas with the T-shaped slot (14) and the air releasing pipe (10).