CN210073904U - Golden yellow light LED chip with vertical structure and eye protection lamp thereof - Google Patents

Golden yellow light LED chip with vertical structure and eye protection lamp thereof Download PDF

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Publication number
CN210073904U
CN210073904U CN201920922301.8U CN201920922301U CN210073904U CN 210073904 U CN210073904 U CN 210073904U CN 201920922301 U CN201920922301 U CN 201920922301U CN 210073904 U CN210073904 U CN 210073904U
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layer
emitting layer
type semiconductor
light
semiconductor material
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张伯文
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Optical energy technology Co.,Ltd.
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Wuhan Rui Chen Tengfei Investment Co Ltd
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Abstract

The utility model provides a golden yellow light LED chip with a vertical structure, which comprises a substrate, a luminous layer and an electrode layer, wherein a p-type semiconductor material layer is arranged on the substrate; the light-emitting layer is provided with a type semiconductor material layer and comprises a red light-emitting layer and a yellow light-emitting layer which are arranged on the P-type semiconductor material layer in a side-by-side connection mode. The red light emitted by the red light emitting layer and the yellow light emitted by the yellow light emitting layer are mixed to form golden yellow light, and no blue light is emitted, so that the human eyes are protected from being damaged by the blue light. In addition, the utility model also provides an LED eye-protecting lamp, the lamp shade is made of natural crystal rock ore, after the natural crystal rock ore generates heat, water molecules in the surrounding air are absorbed on the surface, then are evaporated, absorb water again, are evaporated again, alternately go on in a reciprocating way, and generate negative ions continuously; meanwhile, natural crystal rock is in a fog shape, and the generated light is soft and free of glare.

Description

Golden yellow light LED chip with vertical structure and eye protection lamp thereof
Technical Field
The utility model relates to a LED technical field specifically relates to a gold yellow light LED chip of vertical structure and adopt eye-protecting lamp of this chip.
Background
In recent years, the development of LED technology is rapid, and LED lighting products are gradually replacing conventional lighting sources due to their characteristics of energy saving, environmental protection and durability. At present, most of LED lighting light sources are white light generated after a blue LED chip excites yellow fluorescent powder, the spectral curve of the white light is not smooth, and particularly the peak value of a blue light wave band is obviously higher than that of natural light or an incandescent lamp.
The world health organization WHO loving eyes association publishes: more than 30000 worldwide are blinded each year from 2006 to 2008 due to blue light radiation. According to the data display of the ophthalmology conference of the Chinese medical society: in 4.2 hundred million net citizens in China, 63.5 percent of net citizens generate eye diseases with different degrees such as visual deterioration, cataract, blindness and the like due to blue light radiation. The existing research shows that the long-time exposure to high-intensity blue light in one day aggravates retinal macular region diseases, causes eye fundus injury after cataract operation, causes blurred vision and glare, inhibits the secretion of melatonin, disturbs sleep and also improves the incidence rate of serious diseases of a human body.
In order to avoid the harm of blue light to human, some schemes have been adopted in the prior art to absorb or block the emission of blue light. For example, in the patent with application number 201110193268.8 entitled "coated optical filter for reducing blue light harm of LED", a light absorbing material made of rare earth oxide material is coated on one or both surfaces of a substrate, and the coated substrate is placed on the light emitting path of a light source to absorb the blue light in the light source, thereby reducing the harm of the blue light to human beings; the patent with the application number of 201120329140.5 and the name of 'a blue-light-proof LED lamp' realizes the scattering of blue light emitted by a light source by arranging a fluorescent powder layer; the application number is 201320123960.8, the patent of the name "an LED eyeshield light source and eye-protecting lamp", uses green glow chip, ruddiness chip and blue and green chip, has realized having reduced the purpose of high energy blue light.
The method absorbs and filters blue light components in the light speed of the light source or lengthens the wavelength of the blue light, thereby reducing the harm of the high-energy blue light to human beings. However, the method can only reduce the proportion of high-energy blue light and cannot fundamentally eliminate the blue light.
In addition, there is also a patent that adopts a blue-free LED chip, such as application No. 201810869092.5 entitled "a blue-free low color temperature dual-band LED light source", and adopts a combination of a yellow light chip and a red light chip, but the phenomenon of uneven light mixing easily occurs by adopting dual chips, which has certain limitations.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, the utility model provides a golden yellow light LED chip of vertical structure, include:
a substrate having a p-type semiconductor material layer disposed thereon;
the light emitting layer is provided with an n-type semiconductor material layer and comprises a red light emitting layer and a yellow light emitting layer which are arranged on the P-type semiconductor material layer in a side-by-side connection manner;
the electrode layer comprises a first electrode layer arranged at the bottom of the substrate and a second electrode layer arranged on the n-type semiconductor material layer, a first electrode is arranged on the first electrode layer, and a second electrode is arranged on the second electrode layer.
Further, the material of the substrate is GaAs.
Further, the red light emitting layer is made of (AlxIn1-x)0.5Ga0.5P material with the peak wavelength of 600-670 nm, wherein the mole fraction of x is 0.1-0.3; the yellow light-emitting layer is made of (AlyIn1-y)0.5Ga0.5P material with the peak wavelength of 550-590 nm, wherein the mole fraction of y is 0.3-0.5.
Further, the p-type semiconductor material layer is a p-type AlInGaP layer, and the n-type semiconductor material layer is an n-type AlInGaP layer.
Furthermore, a groove is formed at the contact position of the red light emitting layer and the yellow light emitting layer and close to the n-type semiconductor material layer.
On the other hand, the utility model also provides a LED eye-protecting lamp, which comprises a lamp socket, be provided with the lamp shade on the lamp stand, be provided with above-mentioned arbitrary in the lamp shade the golden yellow light LED chip of vertical structure.
Further, the lamp shade is made of natural rock crystal.
The utility model provides a golden yellow light LED chip of vertical structure, ruddiness that ruddiness luminescent layer jetted out and yellow light that yellow light luminescent layer jetted out mix the back for golden yellow light, and no blue light jets out to be favorable to protecting the people's eye to avoid blue light harm, this chip simple structure, energy-conservation, with low costs simultaneously. In addition, the utility model also provides an LED eye-protecting lamp, the lamp shade is made of natural crystal rock ore, after the natural crystal rock ore generates heat, water molecules in the surrounding air are absorbed on the surface, then are evaporated, absorb water again, are evaporated again, alternately go on in a reciprocating way, and generate negative ions continuously; meanwhile, natural crystal rock is in a fog shape, and the generated light is soft and free of glare.
Drawings
Fig. 1 is a schematic structural diagram of a vertical gold yellow light LED chip provided in the present invention;
fig. 2 is a schematic structural diagram of a vertical-structure gold yellow LED chip according to another embodiment of the present invention;
wherein, 1, a substrate; 2. a layer of p-type semiconductor material; 301. a red light emitting layer; 302. a yellow light emitting layer; 4. a layer of n-type semiconductor material; 501. a first electrode layer; 502. a second electrode layer; 601. a first electrode; 602. a second electrode; 7. and (4) a groove.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are merely for convenience of description and for simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected" and "disposed" are to be construed broadly, and may for example be fixedly connected, disposed, detachably connected, disposed, or integrally connected and disposed. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1, the utility model provides a golden yellow light LED chip with a vertical structure, which comprises a substrate 1, a luminescent layer and an electrode layer, wherein a p-type semiconductor material layer 2 is arranged on the substrate 1; an n-type semiconductor material layer 4 is arranged on the light-emitting layer, and the light-emitting layer comprises a red light-emitting layer 301 and a yellow light-emitting layer 302 which are arranged on the P-type semiconductor material layer 2 in a side-by-side connection manner; the electrode layers comprise a first electrode layer 501 arranged at the bottom of the substrate 1 and a second electrode layer 502 arranged on the n-type semiconductor material layer 4, wherein a first electrode 601 is arranged on the first electrode layer 501, and a second electrode 602 is arranged on the second electrode layer 502.
In an embodiment of the present invention, the substrate is made of GaAs; the red light emitting layer is made of (AlxIn1-x)0.5Ga0.5P material with the peak wavelength of 600-670 nm, wherein the mole fraction of x is 0.1-0.3; the yellow light-emitting layer is made of (AlyIn1-y)0.5Ga0.5P material with the peak wavelength of 550-590 nm, wherein the mole fraction of y is 0.3-0.5; the p-type semiconductor material layer is a p-type AlInGaP layer, and the n-type semiconductor material layer is an n-type AlInGaP layer.
In another embodiment of the present invention, as shown in fig. 2, a groove 7 is formed at a contact portion of the red light emitting layer 301 and the yellow light emitting layer 302 and near the n-type semiconductor material layer 4. Therefore, the phenomenon that the red light emitting layer and the yellow light emitting layer are crossed at the contact position is avoided.
On the other hand, the utility model also provides a LED eye-protecting lamp, which comprises a lamp socket, be provided with the lamp shade on the lamp stand, be provided with above-mentioned arbitrary in the lamp shade the golden yellow light LED chip of vertical structure.
Specifically, the lamp shade is made of natural rock crystal. The lampshade is made of natural crystal rock, after the natural crystal rock heats, water molecules in the surrounding air are absorbed on the surface, then the water molecules are evaporated, then the water is absorbed, the evaporation is carried out again, and the evaporation is carried out alternately and repeatedly, so that negative ions are continuously generated; meanwhile, natural crystal rock is in a fog shape, and the generated light is soft and free of glare.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (7)

1. A golden yellow LED chip of vertical structure, characterized by that, includes:
a substrate having a p-type semiconductor material layer disposed thereon;
the light emitting layer is provided with an n-type semiconductor material layer and comprises a red light emitting layer and a yellow light emitting layer which are arranged on the P-type semiconductor material layer in a side-by-side connection manner;
the electrode layer comprises a first electrode layer arranged at the bottom of the substrate and a second electrode layer arranged on the n-type semiconductor material layer, a first electrode is arranged on the first electrode layer, and a second electrode is arranged on the second electrode layer.
2. The vertically structured gold yellow LED chip of claim 1, wherein the material of the substrate is GaAs.
3. The vertically structured golden yellow LED chip according to claim 1, wherein the red light emitting layer is made of (Al) with a peak wavelength of 600-670 nmxIn1-x)0.5Ga0.5P is made of a material, wherein the mole fraction of x is 0.1-0.3; the yellow light emitting layer is composed of (Al) with the peak wavelength of 550-590 nmyIn1-y)0.5Ga0.5P material, wherein the mole fraction of y is 0.3-0.5.
4. The vertically structured gold yellow LED chip of claim 1, wherein the p-type semiconductor material layer is a p-type AlInGaP layer and the n-type semiconductor material layer is an n-type AlInGaP layer.
5. The vertically structured golden yellow LED chip of claim 1, wherein a groove is formed at a contact position of the red light emitting layer and the yellow light emitting layer and close to the n-type semiconductor material layer.
6. An LED eye-protecting lamp, characterized in that, it comprises a lamp holder, a lampshade is arranged on the lamp holder, and a golden yellow LED chip with vertical structure as claimed in any one of claims 1 to 5 is arranged in the lampshade.
7. The LED eye-protection lamp according to claim 6, wherein the lampshade is made of natural rock crystal.
CN201920922301.8U 2019-06-19 2019-06-19 Golden yellow light LED chip with vertical structure and eye protection lamp thereof Active CN210073904U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201920922301.8U CN210073904U (en) 2019-06-19 2019-06-19 Golden yellow light LED chip with vertical structure and eye protection lamp thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920922301.8U CN210073904U (en) 2019-06-19 2019-06-19 Golden yellow light LED chip with vertical structure and eye protection lamp thereof

Publications (1)

Publication Number Publication Date
CN210073904U true CN210073904U (en) 2020-02-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201920922301.8U Active CN210073904U (en) 2019-06-19 2019-06-19 Golden yellow light LED chip with vertical structure and eye protection lamp thereof

Country Status (1)

Country Link
CN (1) CN210073904U (en)

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Effective date of registration: 20200703

Address after: 430000 no.1003, 10 / F, building B, Wuhan Optical Valley International Business Center, east of Guanshan Avenue and north of Chuangye street, Donghu New Technology Development Zone, Wuhan, Hubei Province

Patentee after: Optical energy technology Co.,Ltd.

Address before: 430074 No. 1002, floor 10, building B, Wuhan Optics Valley International Business Center, east of Guanshan Avenue and north of Chuangye street, Donghu New Technology Development Zone, Wuhan City, Hubei Province

Patentee before: Wuhan Rui Chen Tengfei Investment Co.,Ltd.

TR01 Transfer of patent right