CN210071149U - Battery system non-contact domain temperature detection device based on infrared temperature sensor - Google Patents
Battery system non-contact domain temperature detection device based on infrared temperature sensor Download PDFInfo
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- CN210071149U CN210071149U CN201920839623.6U CN201920839623U CN210071149U CN 210071149 U CN210071149 U CN 210071149U CN 201920839623 U CN201920839623 U CN 201920839623U CN 210071149 U CN210071149 U CN 210071149U
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Abstract
The utility model relates to an infrared communication technical field, in particular to battery system non-contact territory temperature-detecting device based on infrared temperature sensor, including the control unit MCU and a plurality of infrared sensor who is connected with the control unit MCU electricity respectively, infrared sensor is slim sensor, including infrared absorption membrane, thermistor and infrared transceiver circuit, infrared transceiver circuit includes infrared transmitting circuit and infrared receiving circuit, infrared absorption membrane, thermistor and infrared transmitting circuit electricity in proper order are connected, infrared receiving circuit electricity connection control unit MCU, infrared transmitting circuit and infrared receiving circuit communication. The infrared temperature sensor is adopted to realize temperature detection, so that the number of temperature acquisition probes can be effectively reduced, a heat conduction substance is not required to be added between a detected target and the acquisition probes in non-contact infrared temperature detection, insulation treatment is not required to be carried out between the detected target and the acquisition probes, and the temperature area which can be detected by single infrared temperature detection is wider.
Description
Technical Field
The utility model relates to an infrared communication technical field, in particular to battery system non-contact territory temperature-detecting device based on infrared temperature sensor.
Background
The battery management system is an electronic device which collects various data and states of a battery, such as battery temperature, battery voltage, battery current, battery impedance and the battery system, and performs management functions such as thermal management, safety management, balance management and power control on the battery system based on the collected data and states, and meanwhile, the battery management system can also be configured with functions such as data recording and communication. In order to collect the temperature of the battery, a battery management system needs to be provided with a temperature measuring device, probes for detecting the temperature in the battery system are all based on point collection, if regional temperature collection is needed, a large number of temperature sensors need to be arranged in a region to be measured, and a contact type temperature sensor needs to be subjected to insulation treatment when the temperature of a high-voltage device of the battery system is tested, so that wiring is difficult. Moreover, a probe for detecting the temperature in the battery system needs an excellent conduction structure, and the cost is high; the temperature conduction of the probe has time delay, and the real-time performance of temperature acquisition is not strong.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to avoid the weak point among the above-mentioned prior art and provide a battery system non-contact territory temperature-detecting device based on infrared temperature sensor that the cost is lower relatively and easily arrange.
To achieve the above object: the non-contact type domain temperature detection device comprises a battery management control unit, the non-contact type domain temperature detection device comprises a control unit MCU and a plurality of infrared sensors which are respectively electrically connected with the control unit MCU, the infrared sensors are thin sensors and comprise infrared absorption films, thermistors and infrared receiving and transmitting circuits, the infrared receiving and transmitting circuits comprise infrared transmitting circuits and infrared receiving circuits, the infrared absorption films, the thermistors and the infrared transmitting circuits are sequentially and electrically connected, the infrared receiving circuits are electrically connected with the control unit MCU, and the infrared transmitting circuits communicate with the infrared receiving circuits.
Wherein an infrared absorption film is provided on the pair of conductive wiring films of the thermistor so as to be separated therefrom by an insulating layer.
And an infrared reflection film is arranged on one side of the thermistor, which is far away from the infrared absorption film, in a separated manner through an insulating layer.
The infrared emission circuit comprises a triode, and a collector of the triode is connected with an infrared emission tube U4.
The infrared emission tube U4 is an infrared emission tube with the model number TSAL 6200.
The infrared receiving circuit comprises an infrared receiving probe U3, and the infrared receiving probe U3 is connected to the control unit MCU through a triode logic circuit.
The infrared receiving probe U3 is an infrared receiving probe with the model number HS 0038.
Has the advantages that: this battery system non-contact territory temperature-detecting device based on infrared temperature sensor, including the control unit MCU and a plurality of infrared sensor that are connected with the control unit MCU electricity respectively, infrared sensor is slim sensor, including infrared absorption membrane, thermistor and infrared transceiver circuitry, infrared transceiver circuitry includes infrared transmitting circuit and infrared receiving circuit, infrared absorption membrane, thermistor and infrared transmitting circuit are the electricity in proper order and are connected, infrared receiving circuit electricity connection control unit MCU, infrared transmitting circuit and infrared receiving circuit communication. The infrared temperature sensor is adopted to realize temperature detection, so that the number of temperature acquisition probes can be effectively reduced, a heat conduction substance is not required to be added between a detected target and the acquisition probes in non-contact infrared temperature detection, insulation treatment is not required to be carried out between the detected target and the acquisition probes, and the temperature area which can be detected by single infrared temperature detection is wider.
Drawings
The present invention is further explained by using the drawings, but the embodiments in the drawings do not constitute any limitation to the present invention, and for those skilled in the art, other drawings can be obtained according to the following drawings without any inventive work.
Fig. 1 is a communication connection diagram of a non-contact domain temperature detection device of a battery system based on an infrared temperature sensor.
Fig. 2 is a schematic structural diagram of an infrared transceiving sensor of a non-contact domain temperature detection device of a battery system based on an infrared temperature sensor.
Fig. 3 is an infrared emission circuit diagram of a non-contact domain temperature detection device of a battery system based on an infrared temperature sensor.
Fig. 4 is an infrared receiving circuit diagram of a non-contact domain temperature detecting device of a battery system based on an infrared temperature sensor.
Detailed Description
The invention will be further described with reference to the following examples.
As shown in figure 1, this battery system non-contact territory temperature-detecting device based on infrared temperature sensor, including the control unit MCU and a plurality of infrared sensor that are connected with the control unit MCU electricity respectively, infrared sensor is slim sensor, including infrared absorption membrane, thermistor and infrared transceiver circuit, infrared transceiver circuit includes infrared transmitting circuit and infrared receiving circuit, infrared absorption membrane, thermistor and infrared transmitting circuit connect gradually the electricity, infrared receiving circuit electricity connects the control unit MCU, infrared transmitting circuit and infrared receiving circuit communicate. The infrared temperature sensor is adopted to realize temperature detection, so that the number of temperature acquisition probes can be effectively reduced, a heat conduction substance is not required to be added between a detected target and the acquisition probes in non-contact infrared temperature detection, insulation treatment is not required to be carried out between the detected target and the acquisition probes, and the temperature area which can be detected by single infrared temperature detection is wider.
As shown in fig. 2, the infrared temperature sensor 1 includes a 1 st insulating film 2A and a 2 nd insulating film 2B each having a rectangular strip shape, a film-like or thin-plate-like thermosensitive element 3 provided on the 1 st insulating film 2A, a pair of conductive wiring films 4 formed on the 1 st insulating film 2A in a pattern such as a copper foil and connected to the thermosensitive element 3, and an infrared absorbing film 5 laminated directly above the thermosensitive element 3 through the 2 nd insulating film 2B. The temperature sensor 1 further includes an infrared-ray reflection film 6 laminated on the surface of the thermistor 3 opposite to the surface on which the infrared-ray absorption film 5 is laminated, through the 1 st insulating film 2A. That is, the infrared reflection film 6 is provided directly below the thermistor 3, that is, on the surface of the 1 st insulating film 2A opposite to the surface on which the thermistor 3 is provided (the back surface side of the 1 st insulating film 2A).
The infrared transceiver device also comprises an infrared transceiver circuit which consists of an infrared transmitting circuit shown in figure 3 and an infrared receiving circuit shown in figure 4, wherein the infrared transmitting circuit and the infrared receiving circuit respectively acquire infrared temperature signals on one hand and are in communication connection with the control unit MCU on the other hand. The infrared emission circuit comprises a triode, and the collector of the triode collector is connected with an infrared emission tube U4 with the model number of TSAL 6200. The infrared receiving circuit comprises an infrared receiving probe U3 with the model number of HS0038, and the infrared receiving probe U3 is connected to the control unit MCU through a triode logic circuit. The infrared transmitting tube U4 is a high-efficiency infrared light emitting diode, has high radiation function and radiation intensity, high reliability and is suitable for high-pulse current action. The infrared receiving probe U3 is packaged by black epoxy resin, is not interfered by light sources such as sunlight and fluorescent lamps, is internally provided with a magnetic shield, has low power consumption and high sensitivity, has a receiving distance of 35m under the condition of being matched with a low-power infrared transmitting tube U4, and can be compatible with TTL and CMOS circuits; the received signal frequency is 38kHz, the period is about 26 microseconds, meanwhile, the signal can be amplified, detected and shaped to obtain an encoding signal with TTL level, and the transmission rate can be 800 bits per second.
The infrared receiving and transmitting module receives an instruction of the upper computer through the RS485 communication interface, forwards the instruction to the infrared receiving and transmitting part, and transmits the instruction to the lower computer through the infrared receiving and transmitting part, wherein the lower computer has an infrared communication function; and after receiving the instruction transmitted by the infrared module, the lower computer returns a corresponding response instruction to the infrared transceiving module, and the infrared transceiving module uploads the instruction of the lower instruction to the upper computer through an RS485 communication interface of the lower computer after receiving the instruction of the lower instruction, so that the whole data interaction process is completed.
The state of an RS485 communication chip U1 of the infrared transceiver is a receiving state under the default condition, an infrared transmitting circuit generates a carrier signal of 38kHz through an external crystal oscillator, a NOR gate performs a carrier modulation effect on transmitted data, and the modulated signal is transmitted out through a triode and an infrared transmitting tube; after the infrared emission transmits the data, the RS485 communication chip U1 is in an emission state, and can control the function that the HS0038 stops working when the infrared emission tube transmits, so as to prevent the mutual interference of receiving and transmitting data.
According to the non-contact domain temperature detection device of the battery system based on the infrared temperature sensor, a traditional contact digital temperature sensor, an NTC temperature sensor and a thermoelectric temperature sensor are partially or completely replaced by the infrared temperature sensor in the battery system and an associated control unit, so that the non-contact temperature acquisition function of the battery system is realized. The battery management unit carries out domain temperature data processing according to data of the infrared sensors after the system is powered on, calculates a highest temperature point value and a lowest temperature point value by adopting a comparison method, calculates an area average temperature value by adopting an addition and averaging method, and realizes the acquisition of the domain temperature. The temperature acquisition probes are reduced, meanwhile, the temperature acquisition of a wider area can be realized, the temperature acquisition rate is improved, conducting substances and insulation treatment are reduced, and the cost is reduced.
It should be finally noted that the above embodiments are only intended to illustrate the technical solutions of the present invention, and not to limit the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solutions of the present invention can be modified or replaced with equivalents without departing from the spirit and scope of the technical solutions of the present invention.
Claims (7)
1. The non-contact type domain temperature detection device of the battery system based on the infrared temperature sensor is characterized by comprising a control unit MCU and a plurality of infrared sensors electrically connected with the control unit MCU respectively, wherein each infrared sensor is a thin sensor and comprises an infrared absorption film, a thermistor and an infrared receiving and transmitting circuit, each infrared receiving and transmitting circuit comprises an infrared transmitting circuit and an infrared receiving circuit, the infrared absorption film, the thermistor and the infrared transmitting circuit are sequentially and electrically connected, the infrared receiving circuit is electrically connected with the control unit MCU, and the infrared transmitting circuit is communicated with the infrared receiving circuit.
2. The infrared temperature sensor-based battery system non-contact domain temperature detection device of claim 1, wherein an infrared absorption film is provided on the pair of conductive wiring films of the thermistor with an insulating layer therebetween.
3. The infrared temperature sensor-based battery system non-contact domain temperature detecting device as claimed in claim 2, wherein a side of the thermistor remote from the infrared absorbing film is provided with an infrared reflecting film separated by an insulating layer.
4. The infrared temperature sensor-based battery system non-contact domain temperature detection device as claimed in claim 1, wherein the infrared emission circuit comprises a triode, and an infrared emission tube U4 is connected to a collector of the triode.
5. The non-contact domain temperature detection device of the battery system based on the infrared temperature sensor as claimed in claim 4, wherein the infrared emission tube U4 is an infrared emission tube with model number TSAL 6200.
6. The non-contact domain temperature detection device of the battery system based on the infrared temperature sensor as claimed in claim 1, wherein the infrared receiving circuit comprises an infrared receiving probe U3, and the infrared receiving probe U3 is connected to the control unit MCU via a triode logic circuit.
7. The infrared temperature sensor-based battery system non-contact domain temperature detection device as claimed in claim 6, wherein the infrared receiving probe U3 is an infrared receiving probe model HS 0038.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920839623.6U CN210071149U (en) | 2019-06-03 | 2019-06-03 | Battery system non-contact domain temperature detection device based on infrared temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920839623.6U CN210071149U (en) | 2019-06-03 | 2019-06-03 | Battery system non-contact domain temperature detection device based on infrared temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210071149U true CN210071149U (en) | 2020-02-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920839623.6U Active CN210071149U (en) | 2019-06-03 | 2019-06-03 | Battery system non-contact domain temperature detection device based on infrared temperature sensor |
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| Country | Link |
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| CN (1) | CN210071149U (en) |
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- 2019-06-03 CN CN201920839623.6U patent/CN210071149U/en active Active
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