CN210071149U - Non-contact temperature detection device for battery system based on infrared temperature sensor - Google Patents

Abstract

The utility model relates to an infrared communication technical field, in particular to battery system non-contact territory temperature-detecting device based on infrared temperature sensor, including the control unit MCU and a plurality of infrared sensor who is connected with the control unit MCU electricity respectively, infrared sensor is slim sensor, including infrared absorption membrane, thermistor and infrared transceiver circuit, infrared transceiver circuit includes infrared transmitting circuit and infrared receiving circuit, infrared absorption membrane, thermistor and infrared transmitting circuit electricity in proper order are connected, infrared receiving circuit electricity connection control unit MCU, infrared transmitting circuit and infrared receiving circuit communication. The infrared temperature sensor is adopted to realize temperature detection, so that the number of temperature acquisition probes can be effectively reduced, a heat conduction substance is not required to be added between a detected target and the acquisition probes in non-contact infrared temperature detection, insulation treatment is not required to be carried out between the detected target and the acquisition probes, and the temperature area which can be detected by single infrared temperature detection is wider.

Description

Non-contact temperature detection device for battery system based on infrared temperature sensor

technical field

The utility model relates to the technical field of infrared communication, in particular to a non-contact temperature detection device of a battery system based on an infrared temperature sensor.

Background technique

The battery management system collects various data and states of battery temperature, battery voltage, battery current, battery impedance and battery system, and conducts thermal management, safety management, balance management, power control and other management of the battery system based on the collected data and states. It can also be configured with functions such as data recording and communication. In order to collect the battery temperature, the battery management system needs to be equipped with a temperature measurement device. At present, the temperature detection probes in the battery system are based on point collection. If regional temperature collection is required, a large number of temperature sensors need to be arranged in the area to be measured. The contact-type temperature sensor needs to be insulated when testing the temperature of the high-voltage device in the battery system, which makes wiring difficult. Moreover, the probe for detecting temperature in the battery system requires an excellent conduction structure, and the cost is high; the temperature conduction of the probe has a time delay, and the real-time performance of temperature acquisition is not strong.

Utility model content

The purpose of the present invention is to avoid the above-mentioned deficiencies in the prior art and provide a non-contact temperature detection device for a battery system based on an infrared temperature sensor, which is relatively low-cost and easy to arrange.

In order to achieve the above purpose: to provide a non-contact temperature detection device for a battery system based on an infrared temperature sensor, the battery system includes a battery management control unit, and the non-contact temperature detection device includes a control unit MCU and a plurality of An infrared sensor electrically connected to the unit MCU, the infrared sensor is a thin sensor, including an infrared absorption film, a thermistor and an infrared transceiver circuit, the infrared transceiver circuit includes an infrared emission circuit and an infrared reception circuit, the infrared absorption film, thermal The varistor and the infrared transmitting circuit are electrically connected in sequence, the infrared receiving circuit is electrically connected to the control unit MCU, and the infrared transmitting circuit communicates with the infrared receiving circuit.

Here, an infrared absorbing film is provided on a pair of conductive wiring films of the thermistor separated by an insulating layer.

Wherein, the side of the thermistor away from the infrared absorption film is provided with an infrared reflection film isolated by an insulating layer.

Wherein, the infrared emission circuit includes a triode, and the collector of the collector of the triode is connected with an infrared emission tube U4.

Wherein, the infrared emission tube U4 is an infrared emission tube with a model of TSAL6200.

Wherein, the infrared receiving circuit includes an infrared receiving probe U3, and the infrared receiving probe U3 is connected to the control unit MCU through a triode logic circuit.

Wherein, the infrared receiving probe U3 is an infrared receiving probe whose model is HS0038.

Beneficial effects: The non-contact temperature detection device for a battery system based on an infrared temperature sensor includes a control unit MCU and a plurality of infrared sensors that are respectively electrically connected to the control unit MCU. The infrared sensor is a thin sensor, including an infrared absorption film, a thermal Resistor and infrared transceiver circuit. The infrared transceiver circuit includes an infrared transmitting circuit and an infrared receiving circuit. The infrared absorption film, the thermistor and the infrared transmitting circuit are electrically connected in sequence. The infrared receiving circuit is electrically connected to the control unit MCU, and the infrared transmitting circuit and the infrared receiving circuit communicate with each other. . The use of infrared temperature sensor to achieve temperature detection can effectively reduce the number of temperature acquisition probes. Non-contact infrared temperature detection does not need to add thermally conductive substances between the detected target and the acquisition probe, and does not need to be between the detected target and the acquisition probe. With insulation treatment, a single infrared temperature detection can detect a wide range of temperature.

Description of drawings

The present invention will be further described by using the accompanying drawings, but the embodiments in the accompanying drawings do not constitute any limitation to the present invention. For those of ordinary skill in the art, under the premise of no creative work, the following drawings can also be used to obtain Additional drawings.

FIG. 1 is a schematic diagram of communication connection of a non-contact temperature detection device in a battery system based on an infrared temperature sensor.

FIG. 2 is a schematic structural diagram of an infrared transceiver sensor of a non-contact temperature detection device in a battery system based on an infrared temperature sensor.

FIG. 3 is an infrared emission circuit diagram of a non-contact temperature detection device in a battery system based on an infrared temperature sensor.

FIG. 4 is an infrared receiving circuit diagram of a non-contact temperature detection device in a battery system based on an infrared temperature sensor.

Detailed ways

The present invention will be further described with reference to the following examples.

As shown in Figure 1, the infrared temperature sensor-based non-contact temperature detection device for a battery system includes a control unit MCU and a plurality of infrared sensors that are electrically connected to the control unit MCU. The infrared sensors are thin sensors, including infrared absorption films. , thermistor and infrared transceiver circuit, the infrared transceiver circuit includes an infrared transmitting circuit and an infrared receiving circuit, the infrared absorption film, the thermistor and the infrared transmitting circuit are electrically connected in turn, the infrared receiving circuit is electrically connected to the control unit MCU, and the infrared transmitting circuit and the infrared transmitting circuit are electrically connected. Receive circuit communications. The use of infrared temperature sensor to achieve temperature detection can effectively reduce the number of temperature acquisition probes. Non-contact infrared temperature detection does not need to add thermally conductive substances between the detected target and the acquisition probe, and does not need to be between the detected target and the acquisition probe. With insulation treatment, a single infrared temperature detection can detect a wide range of temperature.

As shown in FIG. 2 , the infrared temperature sensor 1 includes a first insulating film 2A and a second insulating film 2B in a rectangular strip shape, and a film-shaped or thin-plate-shaped thermal element provided on the first insulating film 2A. 3. A pair of conductive wiring films 4 that are patterned on the first insulating film 2A with copper foil or the like and are connected to the thermosensitive element 3, and are laminated directly above the thermosensitive element 3 through the second insulating film 2B The infrared absorption film 5. Moreover, this temperature sensor 1 is provided with the infrared reflection film 6 laminated|stacked by the 1st insulating film 2A on the surface opposite to the surface in which the infrared absorption film 5 of the thermal element 3 was laminated|stacked. That is, the infrared reflective film 6 is provided directly below the thermosensitive element 3 , that is, on the opposite surface (back surface side of the first insulating film 2A) of the first insulating film 2A on which the thermosensitive element 3 is provided.

The infrared transceiver device also includes an infrared transceiver circuit composed of an infrared transmitting circuit as shown in FIG. 3 and an infrared receiving circuit as shown in FIG. 4 . On the one hand, the infrared transmitting circuit and the infrared receiving circuit obtain infrared temperature signals respectively, and on the other hand Communication connection with the control unit MCU. The infrared emission circuit includes a triode, and the collector of the triode collector is connected with a TSAL6200 infrared emission tube U4. The infrared receiving circuit includes a model HS0038 infrared receiving probe U3, which is connected to the control unit MCU through a triode logic circuit. The infrared emission tube U4 is a high-efficiency infrared light-emitting diode with high radiation function and radiation intensity, high reliability, and is suitable for high-pulse current action. The infrared receiving probe U3 is encapsulated by black epoxy resin, which is not interfered by light sources such as sunlight and fluorescent lamps. It is equipped with a magnetic shield, low power consumption, and high sensitivity. 35m, compatible with TTL and CMOS circuits; the frequency of the received signal is 38kHz, and the period is about 26 microseconds. At the same time, it can amplify, detect, and shape the signal to obtain a TTL level encoded signal, and its transmission rate can be 800 bits. per second.

After the infrared transceiver module receives the command from the host computer through the RS485 communication interface, it forwards it to the infrared transceiver part, and then transmits it to the lower computer from the infrared transceiver part. The lower computer has the infrared communication function; After that, the corresponding response command is returned to the infrared transceiver module. After the infrared transceiver module receives the instruction of the lower-level instruction, it uploads it to the upper computer through its own RS485 communication interface, thereby completing the entire data interaction process.

The RS485 communication chip U1 of the infrared transceiver device is in the receiving state by default. The infrared transmitting circuit generates a 38kHz carrier signal through an external crystal oscillator, and then the NOR gate modulates the transmitted data. The modulated signal passes through The triode and the infrared transmitting tube are transmitted; after the infrared transmitting transmits the data, the RS485 communication chip U1 is in the transmitting state, which can control the function of the HS0038 to stop working when the infrared transmitting tube is transmitting, so as to prevent the mutual interference between the receiving and transmitting data.

The infrared temperature sensor-based non-contact temperature detection device for a battery system replaces part or all of the traditional contact digital temperature sensor, NTC temperature sensor and pyroelectric temperature sensor with infrared temperature sensors in the battery system and the associated control unit, Realize the non-contact battery system temperature acquisition function. Arrange single or multiple infrared temperature sensors in the battery system and associated control unit, aiming at the area where the temperature needs to be collected. Methods Calculate the highest temperature point value and the lowest temperature point value, and calculate the regional average temperature value by adding and averaging to realize the acquisition of the domain temperature. By reducing the number of temperature acquisition probes, a wider area of temperature acquisition can be achieved, the temperature acquisition rate can be increased, conductive substances and insulation treatments can be reduced, and costs can be reduced.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the protection scope of the present invention. Persons should understand that the technical solutions of the present invention may be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present invention.

Claims (7)

1. The non-contact type domain temperature detection device of the battery system based on the infrared temperature sensor is characterized by comprising a control unit MCU and a plurality of infrared sensors electrically connected with the control unit MCU respectively, wherein each infrared sensor is a thin sensor and comprises an infrared absorption film, a thermistor and an infrared receiving and transmitting circuit, each infrared receiving and transmitting circuit comprises an infrared transmitting circuit and an infrared receiving circuit, the infrared absorption film, the thermistor and the infrared transmitting circuit are sequentially and electrically connected, the infrared receiving circuit is electrically connected with the control unit MCU, and the infrared transmitting circuit is communicated with the infrared receiving circuit.

2. The infrared temperature sensor-based battery system non-contact domain temperature detection device of claim 1, wherein an infrared absorption film is provided on the pair of conductive wiring films of the thermistor with an insulating layer therebetween.

3. The infrared temperature sensor-based battery system non-contact domain temperature detecting device as claimed in claim 2, wherein a side of the thermistor remote from the infrared absorbing film is provided with an infrared reflecting film separated by an insulating layer.

4. The infrared temperature sensor-based battery system non-contact domain temperature detection device as claimed in claim 1, wherein the infrared emission circuit comprises a triode, and an infrared emission tube U4 is connected to a collector of the triode.

5. The non-contact domain temperature detection device of the battery system based on the infrared temperature sensor as claimed in claim 4, wherein the infrared emission tube U4 is an infrared emission tube with model number TSAL 6200.

6. The non-contact domain temperature detection device of the battery system based on the infrared temperature sensor as claimed in claim 1, wherein the infrared receiving circuit comprises an infrared receiving probe U3, and the infrared receiving probe U3 is connected to the control unit MCU via a triode logic circuit.

7. The infrared temperature sensor-based battery system non-contact domain temperature detection device as claimed in claim 6, wherein the infrared receiving probe U3 is an infrared receiving probe model HS 0038.

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