CN210041440U - Wireless power transmitter with over-temperature protection function - Google Patents
Wireless power transmitter with over-temperature protection function Download PDFInfo
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- CN210041440U CN210041440U CN201920662778.7U CN201920662778U CN210041440U CN 210041440 U CN210041440 U CN 210041440U CN 201920662778 U CN201920662778 U CN 201920662778U CN 210041440 U CN210041440 U CN 210041440U
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Abstract
The utility model relates to a wireless power transmitter with excess temperature protect function, include: the MOS tube power amplification module comprises an MOS tube, a signal generation module connected to the wireless power transmitter and used for amplifying the power of the signal output by the signal generation module; and the temperature control module is connected to the MOS tube power amplification module and used for detecting the temperature of the MOS tube in the MOS tube power amplification module and controlling the temperature of the MOS tube.
Description
Technical Field
The utility model relates to a wireless power transmitter temperature control field, in particular to wireless power transmitter with excess temperature protect function.
Background
In a wireless power transmission system, a power amplification circuit is an essential part which is indispensable to a transmitting end. The MOS tube plays a key role, and mainly amplifies the change of input voltage into the change of current of an output end, so that the MOS tube carries large current and power. When the power input into the MOS tube exceeds the bearing capacity of the MOS tube or the energy standing wave reflection caused by impedance mismatching in the circuit, the heat of the MOS tube can be rapidly increased.
However, the wireless charging transmitting plate in the prior art gradually tends to be flat and miniaturized, a heat radiation fan is difficult to add in a small sealed space, and the ventilation property is poor, the heat radiation is only carried out physically by coating a heat conduction material, the problems of 'overheating caused by sudden short circuit' and 'circuit heating caused by standing wave energy reflection' and the like cannot be solved, and can only be slowly relieved, so that the problem to be solved urgently in the field is solved by providing the transmitting end of the wireless power transmission system with the over-temperature protection function.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a wireless power transmitter with excess temperature protect function can start the excess temperature protection mechanism when MOS pipe temperature rises, avoids the circuit to burn out.
In order to solve the technical problem, the utility model provides a wireless power transmitter with excess temperature protect function, include: the MOS tube power amplification module comprises an MOS tube, a signal generation module connected to the wireless power transmitter and used for amplifying the power of the signal output by the signal generation module; and the temperature control module is connected to the MOS tube power amplification module and used for detecting the temperature of the MOS tube in the MOS tube power amplification module and controlling the temperature of the MOS tube.
Optionally, the temperature control module includes: the temperature detection unit is contacted with the MOS tube power amplification module and is used for detecting the temperature of the MOS tube power amplification module; the temperature judging unit is connected to the temperature detecting unit and used for outputting control voltage according to the temperature detected by the temperature detecting unit; and the temperature control unit is connected to the MOS tube, connected to the temperature judgment unit and used for controlling the on-off of the MOS tube according to the control voltage so as to control the temperature of the MOS tube power amplification module.
Optionally, the temperature detection unit includes a thermistor, and the thermistor is in contact with an MOS transistor of the MOS transistor power amplification module.
Optionally, the temperature detection unit further includes a voltage dividing resistor connected to a power supply voltage and to the temperature determination unit, and a resistance of the voltage dividing resistor is adjustable.
Optionally, the temperature determining unit includes a comparator, connected to the temperature detecting unit, and configured to output a control voltage according to the temperature detected by the temperature detecting unit.
Optionally, the temperature control unit includes an optical coupling relay, an input end of the optical coupling relay is connected to the temperature judgment unit, and two output ends of the optical coupling relay are respectively connected to the MOS transistor power amplification module and the signal generation module, and the signal generation module and the MOS transistor power amplification module are disconnected according to the control voltage, so that the MOS transistor stops working and temperature control is achieved.
Optionally, the thermistor is a positive temperature coefficient thermistor.
Optionally, a positive input end of the comparator is connected to the thermistor, a negative input end of the comparator is connected to the voltage dividing resistor, and an output end of the comparator is connected to the temperature control unit.
Optionally, the output end of the temperature determination unit is connected to the optocoupler relay through a not gate.
Optionally, the thermistor is a negative temperature coefficient thermistor; the positive input end of the comparator is connected to the divider resistor, the negative input end of the comparator is connected to the thermistor, and the output end of the comparator is connected to the temperature control unit.
The utility model discloses a wireless power transmitter with excess temperature protect function carries out temperature control, simple and convenient to the MOS pipe power amplification module in the wireless power transmitter.
Drawings
Fig. 1 is a schematic circuit diagram of a temperature detection module and a temperature determination module according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a connection structure of a temperature control module according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a wireless power transmitter with an over-temperature protection function according to an embodiment of the present invention.
Fig. 4 is a schematic diagram of a connection structure of a wireless power transmitter with an over-temperature protection function according to an embodiment of the present invention.
Detailed Description
The wireless power transmitter with over-temperature protection function provided by the present invention is further described in detail with reference to the accompanying drawings and the detailed description.
Referring to fig. 1 to 4, fig. 1 is a schematic circuit diagram of a temperature detection module and a temperature determination module according to an embodiment of the present invention. Fig. 2 is a schematic diagram of a connection structure of a temperature control module according to an embodiment of the present invention. Fig. 3 is a schematic structural diagram of a wireless power transmitter with an over-temperature protection function according to an embodiment of the present invention. Fig. 4 is a schematic diagram of a connection structure of a wireless power transmitter with an over-temperature protection function according to an embodiment of the present invention.
In this embodiment, there is provided a wireless power transmitter having an over-temperature protection function, including: the MOS tube power amplification module 2 comprises an MOS tube, is connected to the signal generation module 1 of the wireless power transmitter and is used for amplifying the power of the signal output by the signal generation module 1; and the temperature control module is connected to the MOS tube power amplification module 2 and used for detecting the temperature of the MOS tube in the MOS tube power amplification module 2 and controlling the temperature of the MOS tube.
In a specific embodiment, the wireless power transmission system comprises a direct current source, a signal generation module 1, an MOS transistor power amplification module 2, and a transmitting coil, which are connected in sequence. The MOS tube power amplification module 2 comprises an MOS tube, an input end impedance matching circuit, a grid biasing circuit, a drain biasing circuit and an output end impedance matching circuit. The drain current of the MOS tube is formed by a periodic series of pulses, when a driving signal is strong enough, the MOS tube can enter a saturated conduction state, and the input end impedance matching circuit and the output end impedance matching circuit which are arranged at the front end and the rear end of the MOS tube are used for matching front and rear resistors of the MOS tube so as to better output energy, reduce standing wave loss, output pulse signals with the same frequency as the input signals and finally achieve the effect of power amplification.
In one embodiment, the temperature control module comprises: the temperature detection unit 3 is in contact with the MOS tube power amplification module 2 and is used for detecting the temperature of the MOS tube power amplification module 2; a temperature judging unit 4 connected to the temperature detecting unit 3 for outputting a control voltage according to the temperature detected by the temperature detecting unit 3; and the temperature control unit 5 is connected to the MOS tube, connected to the temperature judgment unit 4, and used for controlling the on-off of the MOS tube according to the control voltage so as to control the temperature of the MOS tube power amplification module 2.
In one embodiment, the temperature detecting unit 3 includes a thermistor R2, and the thermistor R2 is in contact with a MOS transistor of the MOS transistor power amplifying module 2.
In one embodiment, the temperature detecting unit 3 further includes a voltage dividing resistor R1 connected to a power supply voltage and to the temperature determining unit 4, and the resistance of the voltage dividing resistor R1 is adjustable.
In one embodiment, the temperature determining unit 4 comprises a comparator connected to the temperature detecting unit 3 for outputting a control voltage according to the temperature detected by the temperature detecting unit 3.
In a specific embodiment, the temperature control unit 5 includes an optical coupling relay, an input end of the optical coupling relay is connected to the temperature determination unit 4, and two output ends of the optical coupling relay are respectively connected to the MOS transistor power amplification module 2 and the signal generation module 1, and the signal generation module 1 and the MOS transistor power amplification module 2 are disconnected according to the control voltage, so that the MOS transistor stops working and temperature control is realized.
In one embodiment, the thermistor R2 is a positive temperature coefficient thermistor.
In one embodiment, the positive input terminal of the comparator is connected to the thermistor R2, the negative input terminal of the comparator is connected to the voltage dividing resistor R1, and the output terminal of the comparator is connected to the temperature control unit 5.
In one embodiment, when the temperature detecting unit 3 detects that the temperature is higher than the temperature protection threshold, since the thermistor R2 is a positive temperature coefficient thermistor, the resistance of the thermistor R2 becomes large, the voltage value input to the positive input terminal of the comparator becomes large, the voltage at the positive input terminal of the comparator is higher than the voltage at the negative input terminal of the comparator, and the output terminal of the comparator outputs a high level as the control voltage.
In a specific embodiment, the output end of the temperature judging unit 4 is connected to the optocoupler relay through a not gate. In a specific embodiment, an output end of the temperature determination unit 4 is connected to an input end of the optocoupler relay, and when an output end of the comparator outputs a high level, a signal input by the input end of the optocoupler relay is a low level.
In one embodiment, the optocoupler relay includes a light emitting diode, wherein an anode of the light emitting diode serves as the first input terminal and a cathode of the light emitting diode serves as the second input terminal. The output end of the comparator is connected to the first input end, therefore, in this specific embodiment, the two output ends of the optical coupling relay are disconnected, so that the signal generating module 1 and the MOS transistor power amplifying module 2 are disconnected, the MOS transistor does not need to continue to work, the temperature gradually returns to a lower temperature no longer through an overcurrent current and an overcurrent voltage, and thus a temperature protection is completed.
In one embodiment, the thermistor R2 is a negative temperature coefficient thermistor. In this embodiment, the positive input terminal of the comparator is connected to the voltage dividing resistor R1, the negative input terminal of the comparator is connected to the thermistor R2, and the output terminal of the comparator is connected to the temperature control unit 5.
When the temperature detection unit 3 detects that the temperature is higher than the temperature protection threshold, the comparator is a negative temperature coefficient thermistor R2, the resistance of the thermistor R2 is reduced, and the voltage value input to the negative input end of the comparator is reduced, so that the voltage at the positive input end of the comparator is higher than the voltage at the negative input end of the comparator, and the output end of the comparator outputs a low level as the control voltage.
In this embodiment, the output end of the temperature determination unit 4 is directly connected to the input end of the optocoupler relay, and when the output end of the comparator outputs a low level, a signal input by the input end of the optocoupler relay is at a low level.
In one embodiment, the input value of one input end of the comparator can be changed by adjusting the resistance value of the voltage dividing resistor R1, so as to change the temperature protection threshold value of the thermistor R2.
In one embodiment, the comparator is implemented by a dual voltage comparator integrated circuit LM393 chip. In this embodiment, a peripheral resistor, a capacitor, and the like connected to the chip are further included to realize a final temperature determination function.
Referring to fig. 1, the InB pin of the LM393 chip of the dual voltage comparator integrated circuit is used as the input pin of the comparator, and the DO pin is used as the output pin of the comparator. Specifically, an InB + pin of the dual voltage comparator integrated circuit LM393 chip is used as the positive input terminal of the comparator, and an InB-pin of the dual voltage comparator integrated circuit LM393 chip is used as the negative input terminal of the comparator.
In one embodiment, the optocoupler relay is of the type AQV216S optocoupler relay. In this particular embodiment, a shunt resistor is also included that is connected to the AQV216S optocoupler relay.
Referring to fig. 1, an output end of the temperature determination unit 4 is connected to the optocoupler relay through a not gate, and when the temperature of the MOS transistor is higher than the temperature protection threshold, an output high level signal of the dual voltage comparator integrated circuit LM393 is changed into a low level when being input to the optocoupler relay through the not gate, so that a pin 1 of the AQV216 optocoupler relay is changed into a low level, and at this time, pins 6 and 4 of the AQV216 optocoupler relay are disconnected, so that the signal generation module 1 and the MOS transistor power amplification module 2 are disconnected, and the MOS transistor stops working.
In one embodiment, when the detected temperature is lower than the set threshold T, the signal generator is turned on, and the system operates normally.
The utility model discloses a power amplifier carries out temperature control, simple and convenient in the wireless power transmitter to the wireless power transmitter with excess temperature protect function.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A wireless power transmitter with an over-temperature protection function, comprising:
the MOS tube power amplification module comprises an MOS tube, a signal generation module connected to the wireless power transmitter and used for amplifying the power of the signal output by the signal generation module;
and the temperature control module is connected to the MOS tube power amplification module and used for detecting the temperature of the MOS tube in the MOS tube power amplification module and controlling the temperature of the MOS tube.
2. The wireless power transmitter with over-temperature protection function according to claim 1, wherein the temperature control module comprises:
the temperature detection unit is contacted with the MOS tube power amplification module and is used for detecting the temperature of the MOS tube power amplification module;
the temperature judging unit is connected to the temperature detecting unit and used for outputting control voltage according to the temperature detected by the temperature detecting unit;
and the temperature control unit is connected to the MOS tube, connected to the temperature judgment unit and used for controlling the on-off of the MOS tube according to the control voltage so as to control the temperature of the MOS tube power amplification module.
3. The wireless power transmitter with over-temperature protection function according to claim 2, wherein the temperature detection unit comprises a thermistor, and the thermistor is in contact with a MOS transistor of the MOS transistor power amplification module.
4. The wireless power transmitter of claim 3, wherein the temperature detection unit further comprises a voltage divider resistor connected to a power supply voltage and to the temperature determination unit, and the voltage divider resistor has an adjustable resistance.
5. The wireless power transmitter with over-temperature protection function according to claim 4, wherein the temperature determination unit comprises a comparator connected to the temperature detection unit for outputting a control voltage according to the temperature detected by the temperature detection unit.
6. The transmitter of claim 5, wherein the temperature control unit comprises an optical coupling relay, an input end of the optical coupling relay is connected to the temperature determination unit, and two output ends of the optical coupling relay are respectively connected to the MOS transistor power amplification module and the signal generation module, and are configured to disconnect the signal generation module and the MOS transistor power amplification module according to the control voltage, so that the MOS transistor stops working and temperature control is achieved.
7. The wireless power transmitter with over-temperature protection function according to claim 6, wherein the thermistor is a positive temperature coefficient thermistor.
8. The wireless power transmitter with over-temperature protection function according to claim 7, wherein a positive input terminal of the comparator is connected to the thermistor, a negative input terminal of the comparator is connected to the voltage dividing resistor, and an output terminal of the comparator is connected to the temperature control unit.
9. The wireless power transmitter with over-temperature protection function according to claim 8, wherein the output end of the temperature determination unit is connected to the optocoupler relay through a not gate.
10. The wireless power transmitter with over-temperature protection function according to claim 5, wherein the thermistor is a negative temperature coefficient thermistor; the positive input end of the comparator is connected to the divider resistor, the negative input end of the comparator is connected to the thermistor, and the output end of the comparator is connected to the temperature control unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920662778.7U CN210041440U (en) | 2019-05-09 | 2019-05-09 | Wireless power transmitter with over-temperature protection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920662778.7U CN210041440U (en) | 2019-05-09 | 2019-05-09 | Wireless power transmitter with over-temperature protection function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210041440U true CN210041440U (en) | 2020-02-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920662778.7U Active CN210041440U (en) | 2019-05-09 | 2019-05-09 | Wireless power transmitter with over-temperature protection function |
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| Country | Link |
|---|---|
| CN (1) | CN210041440U (en) |
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- 2019-05-09 CN CN201920662778.7U patent/CN210041440U/en active Active
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