CN210036962U

CN210036962U - Light intensity detector of 405nm light source

Info

Publication number: CN210036962U
Application number: CN201920756002.1U
Authority: CN
Inventors: 陈烜; 何谢见
Original assignee: SHENZHEN DAZZLE 3D PRINTING TECHNOLOGY Co Ltd
Current assignee: SHENZHEN DAZZLE 3D PRINTING TECHNOLOGY Co Ltd
Priority date: 2019-05-24
Filing date: 2019-05-24
Publication date: 2020-02-07
Anticipated expiration: 2029-05-24

Abstract

The utility model discloses a light intensity detector of 405nm light source, which relates to the technical field of 3D printing, and comprises a shell and a detection circuit arranged inside the shell, wherein the detection circuit comprises a control unit, a detection unit, a driving unit and a display unit, and the detection unit, the driving unit and the display unit are electrically connected with the control unit; the detection unit is electrically connected with a power end of the control unit and comprises a silicon photocell sensor and a driving circuit of the silicon photocell sensor; the driving unit comprises a driving circuit and a power supply circuit, wherein the driving circuit converts an input current signal into a voltage signal and transmits the voltage signal to the control unit for processing; the power supply circuit reduces the input power voltage; display element and the control unit electric connection, the data after the control unit is handled are shown directly perceivedly, the utility model discloses a high performance silicon photocell sensor, greatly reduced the cost for the ordinary user also can use, is fit for mass production and popularization.

Description

Light intensity detector of 405nm light source

Technical Field

The utility model relates to a 3D prints technical field, concretely relates to light intensity detector of 405nm light source.

Background

The principle of the photocuring 3D printer is that ultraviolet light with a certain waveband is used for irradiating liquid photosensitive resin, different areas are selectively cured according to the intensity of illumination to form a two-dimensional plane, the two-dimensional plane is attached to a forming platform, and the two-dimensional plane is continuously stacked layer by layer along with the rising or falling of the forming platform to form a three-dimensional model. In photocuring 3D printing, the illumination intensity directly influences the success rate of printing and the forming quality, and the most widely used 405nm ultraviolet light source in the market at present has the phenomenon of attenuation after long-term use. This requires that the intensity of light be constantly detected to adjust the output power to ensure the optimum intensity of light for curing the resin used, thereby achieving the best printing effect. However, the existing optical power detection instrument is quite expensive and cannot be accepted by general users.

SUMMERY OF THE UTILITY MODEL

According to the not enough of above prior art, the utility model aims to solve the technical problem that a light intensity detector of 405nm light source is proposed, circuit structure has been simplified, adopts the silicon photocell sensor of high performance as the main components and parts that detect, greatly reduced the cost for also can use by ordinary user, be fit for mass production and popularization.

A light intensity detector of a 405nm light source comprises a shell and a detection circuit arranged in the shell, wherein the detection circuit comprises a control unit, a detection unit, a driving unit and a display unit, and the detection unit, the driving unit and the display unit are electrically connected with the control unit;

the control unit is designed based on the singlechip as a core;

the detection unit is electrically connected with a power end of the control unit and comprises a silicon photocell sensor and a driving circuit of the silicon photocell sensor;

the driving unit comprises a driving circuit and a power supply circuit, wherein;

the driving circuit converts an input current signal into a voltage signal, and the voltage signal is subjected to operational amplification processing and then transmitted to the control unit for processing;

the power supply circuit reduces the input power voltage and provides the reduced power voltage for the single chip microcomputer and the detection unit;

the display unit is electrically connected with the control unit and used for visually displaying the data processed by the control unit.

Optionally, the single chip microcomputer is an STM32 series single chip microcomputer.

Optionally, the silicon photocell sensor is a BPW34 model silicon PIN photodiode.

Optionally, the driving circuit uses an LM358 dual operational amplifier to perform operational amplifier processing on the voltage signal.

Optionally, a switching power supply chip is disposed in the power supply circuit, and the switching power supply chip employs a DC-DC converter LT3509 for converting an input 24V DC voltage into a 3.3V DC voltage.

The utility model has the advantages that: the system has the advantages that the functions of control and driving are completed by adopting integrated chips such as a single chip microcomputer, the circuit structure is simplified, the high-performance silicon photocell sensor is adopted as a main component for detection, the cost is greatly reduced, a common user can use the system, the system is suitable for batch production and popularization, a display screen is added as a display unit, interaction is more friendly and humanized, and the measurement result is more accurate by adopting software calibration.

Drawings

Fig. 1 is a schematic structural diagram in an embodiment of the present invention;

fig. 2 is a schematic circuit diagram of a control unit according to an embodiment of the present invention;

fig. 3 is a schematic circuit diagram of a driving circuit in a driving unit according to an embodiment of the present invention;

fig. 4 is a schematic circuit diagram of a power supply circuit in a driving unit according to an embodiment of the present invention;

FIG. 5 is a schematic circuit diagram of a detection unit according to an embodiment of the present invention;

fig. 6 is a schematic circuit diagram of a display unit according to an embodiment of the present invention.

Wherein, 1-detecting probe, 2-display screen.

Detailed Description

In order to make the technical means, creation features, achievement purposes and functions of the present invention easy to understand, the present invention is further described below with reference to the following embodiments.

As an embodiment, the utility model provides a light intensity detector of 405nm light source, including the shell with set up the detection circuitry inside the shell, detection circuitry said including the control unit, detecting element, drive unit and display element, the detecting element, the drive unit and the display element with the control unit electric connection;

the control unit is designed based on the singlechip as a core;

Through this detector, adopt integrated chip such as singlechip to accomplish control and driven function, simplified circuit structure, adopt high performance's silicon photocell sensor as the main components and parts that detect, greatly reduced the cost for the ordinary user also can use, is fit for mass production and popularization, has still added the display screen as the display element, makes the interaction more friendly, and is more humanized, adopts software calibration, makes the measuring result more accurate.

The following describes the preferred embodiments of the present invention in detail.

Referring to fig. 1, the detector includes a housing and a detection circuit disposed inside the housing, the detection circuit includes a control unit, a detection unit, a driving unit and a display unit, and the detection unit, the driving unit and the display unit are electrically connected to the control unit.

The control unit is designed based on a single chip microcomputer as a core, and an STM32 series single chip microcomputer is adopted in the embodiment.

The detection unit is electrically connected with the power end of the control unit, the drive circuit comprises a silicon photocell sensor and a silicon photocell sensor, the silicon photocell sensor is a BPW34 type silicon PIN photodiode in the embodiment and is a high-speed and high-sensitivity light detector, the response time is short, the quick response can be realized, in operation, the silicon photocell sensor receives irradiation of a 405nm ultraviolet light source, collects light source intensity signals and transmits the light source intensity signals to the single chip microcomputer for processing, and then the single chip microcomputer visually displays data for a user through the display unit.

the driving circuit converts an input current signal into a voltage signal, and the voltage signal is subjected to operational amplification processing and then transmitted to the control unit for processing, in the embodiment, an LM358 dual operational amplifier is adopted, the LM358 dual operational amplifier forms an operational amplification circuit, the LM358 dual operational amplifier is used as a voltage follower, and the front and rear stages can be isolated, namely, the singlechip is isolated from signals of rear components, so that mutual interference is prevented;

the power supply circuit steps down the input power voltage and provides the stepped-down power voltage for the single chip microcomputer and the detection unit, the core of the power supply circuit is a power management chip, and in the embodiment, the power management chip adopts a switching power chip DC-DC converter LT3509 for converting the input 24V direct-current voltage into 3.3V direct-current voltage.

The display unit is electrically connected with the control unit, data processed by the control unit are visually displayed, and the main body of the display unit adopts a 2.8-inch LCD display screen 2.

As can be seen from the illustration of fig. 1, the detection probe 1 of the detector is disposed at a more obvious position, protruding from the housing, so as to receive the irradiation of the ultraviolet light source with 405 nm.

Referring to fig. 2, which is a schematic circuit diagram of a control unit, in the present embodiment, a single chip microcomputer of STM32F103 is adopted, which includes a single chip microcomputer and peripheral circuits thereof, and an enhanced single chip microcomputer of STM32F10 has Flash, motor control, USB, and CAN of up to 1MB, with FSMC signals, so that a bus connection board CAN be used to control the LCD display 2 of the display unit. The circuit of the control unit is also reserved with a burning port, a power indicator light, a reset circuit and the like

Referring to fig. 3, which is a schematic circuit diagram of a driving circuit in a driving unit, a dual operational amplifier LM358 converts and amplifies an input current signal into a voltage signal, and a single chip reads the voltage signal at an ADC node at an output terminal of the dual operational amplifier LM 358.

Referring to fig. 4, which is a schematic circuit diagram of a power supply circuit in a driving unit, a DC-DC converter LT3509 performs voltage reduction, converts an input voltage to effectively output a fixed voltage, converts a 24V DC voltage to a 3.3V DC voltage, and provides the voltage to a control unit and a detection unit.

Please refer to fig. 5, which is a schematic circuit diagram of the detection unit, the detection unit is connected to a VDD power supply terminal of the single chip microcomputer, and then connected to a cathode of a BPW34 type silicon PIN photodiode after voltage division by a resistor R1, the BPW34 type silicon PIN photodiode is further connected in parallel with a capacitor C1 and a patch diode SOD123, wherein an anode of the BPW34 type silicon PIN photodiode is connected to an anode of the patch diode SOD123, the patch diode SOD123 is further connected to a resistor R1, a 3.3V dc voltage PW reduced by a power supply circuit breaks through the 34 type silicon PIN photodiode in a reverse direction, when a 405nm ultraviolet light source irradiates the BPW34 type silicon PIN photodiode, that is, when the 405nm ultraviolet light source irradiates the detection probe 1, a current signal proportional to the illumination intensity is generated in the BPW34 type silicon PIN photodiode, and the single chip microcomputer reads and detects the magnitude of the current signal, so as to determine the illumination intensity.

Referring to fig. 6, which is a schematic circuit diagram of the display unit, the LCD display screen 2 is connected to the single chip microcomputer through a bus, and the single chip microcomputer is responsible for controlling the LCD display screen 2 and visually displaying the processed data on the LCD display screen 2.

The specific assembling and testing process of the detector is as follows:

(1) drawing a circuit schematic diagram in a circuit diagram drawing software such as an aluminum design environment, and then leading the circuit schematic diagram into a PCB (printed Circuit Board) diagram of a circuit board to carry out layout and wiring of electronic components;

(2) cutting a copper-clad plate, cutting out the copper-clad plate into a proper size, then carrying out via hole design, and carrying out copper deposition, electroplating, film stripping, etching, green oil, character silk-screen printing, forming, testing and other processes to obtain a required PCB;

(3) mounting and welding electronic components of the PCB circuit board by contrasting the circuit diagram;

(4) burning the singlechip, downloading the written program into the singlechip, debugging and testing the program, and debugging the program step by step according to the functional module until the test is finished;

(5) and assembling the shell.

To sum up, the utility model has the advantages that: the system has the advantages that the functions of control and driving are completed by adopting integrated chips such as a single chip microcomputer, the circuit structure is simplified, the high-performance silicon photocell sensor is adopted as a main component for detection, the cost is greatly reduced, a common user can use the system, the system is suitable for batch production and popularization, a display screen is added as a display unit, interaction is more friendly and humanized, and the measurement result is more accurate by adopting software calibration.

It will be appreciated by those skilled in the art that the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The embodiments disclosed above are therefore to be considered in all respects as illustrative and not restrictive. All changes which come within the scope of the invention or which are equivalent to the scope of the invention are embraced by the invention.

Claims

1. The light intensity detector of the 405nm light source is characterized by comprising a shell and a detection circuit arranged in the shell, wherein the detection circuit comprises a control unit, a detection unit, a driving unit and a display unit, and the detection unit, the driving unit and the display unit are electrically connected with the control unit;

the control unit is designed based on the singlechip as a core;

2. The light intensity detector of 405nm light source according to claim 1, wherein: the single chip microcomputer is an STM32 series single chip microcomputer.

3. The light intensity detector of 405nm light source according to claim 1, wherein: the silicon photocell sensor is a BPW34 model silicon PIN photodiode.

4. The light intensity detector of 405nm light source according to claim 1, wherein: the driving circuit adopts an LM358 double operational amplifier to carry out operational amplification processing on voltage signals.

5. The light intensity detector of 405nm light source according to claim 1, wherein: the power supply circuit is internally provided with a switching power supply chip, and the switching power supply chip adopts a DC-DC converter LT3509 for converting the input 24V direct-current voltage into 3.3V direct-current voltage.