CN209992108U - Device for measuring vacuum degree - Google Patents
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- CN209992108U CN209992108U CN201920761385.1U CN201920761385U CN209992108U CN 209992108 U CN209992108 U CN 209992108U CN 201920761385 U CN201920761385 U CN 201920761385U CN 209992108 U CN209992108 U CN 209992108U
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Abstract
The application discloses measure device of vacuum, the device includes: a power supply, an ammeter, an electrode, a semiconductor thin film material and a substrate; the positive electrode and the negative electrode of the power supply are connected with the electrodes through leads; the current meter is arranged between the power supply and the electrode; the electrode is connected with the semiconductor thin film material; the semiconductor thin film material is deposited on the substrate. The resistance of the semiconductor thin film material can be obtained through the voltage provided by the power supply and the current obtained by the current meter through measurement, the resistance of the semiconductor thin film material in the device for measuring the vacuum degree and the vacuum degree of the device present a quasi-linear relation, so that the vacuum degree in a larger range can be measured through measuring the resistance of the semiconductor thin film material, and the defect that the high vacuum degree and the low vacuum degree cannot be measured simultaneously by the same measuring device in the prior art is overcome.
Description
Technical Field
The application relates to the field of vacuum degree detection, in particular to a device for measuring vacuum degree.
Background
The vacuum degree is the degree of rarefied gas in vacuum state, and is roughly divided into ultra-high vacuum degree (<1×10- 5Pa), high vacuum (1X 10)-5~1×10-1Pa) and low vacuum (1X 10)-1~1×105Pa) range. The ultra-high vacuum is mainly used for: surface science, positive and negative electron colliders, nuclear fusion of deuterium and tritium, and the like. High vacuum is mainly used for: the semiconductor industry; atomic energy industry; the metallic material industry; the electronic and electrical industry; the automotive industry; medical field, molecular atomic layer vapor deposition, and the like. The low vacuum is mainly used for: drying and distilling under reduced pressure; vacuum freeze-drying, vacuum concentration, degassing and vacuum packaging in food industry; providing a foreline vacuum for the high vacuum, etc. The application fields and the effects of different vacuum degrees are different, and the different vacuum degrees are divided by the numerical value ranges, in some applications, such as the field of semiconductor material preparation, the high vacuum degree represents that the impurity gas in the space is less, the impurity content of the prepared semiconductor material is less, the controllable doping of the semiconductor material is realized by controlling the vacuum degree, and generally, the performance of the semiconductor material with less impurities is good. Therefore, methods of detecting the vacuum value are also becoming more and more important.
The existing vacuum degree measuring method is generally divided into low vacuum degree and high vacuum degree measurement, and different vacuum degrees need to be measured by adopting different vacuum gauges. The pressure range of the vacuum degree which can be measured by a general low-vacuum gauge is about: 1X 10-1~2×102Pa. Air pressure greater than 2X 102Pa or less than 1X 10-1Pa, low vacuum gauge tube could not be measured. Likewise, a high vacuum gauge detecting a high vacuum level cannot measure a low vacuum level. Taking the hot cathode ionization vacuum gauge for detecting high vacuum degree as an example, the vacuum degree is more than 1 × 10-1The device can not measure when Pa, mainly because the air pressure is higher when the vacuum degree is low, the oxygen content in the atmosphere is higher, and at the moment, if the hot cathode ionization vacuum gauge is opened, the hot cathode ionization vacuum gauge is easy to burn. Therefore, the same measuring device and method cannot measure high vacuum degree and low vacuum degree simultaneously.
SUMMERY OF THE UTILITY MODEL
The application provides a device for measuring vacuum degree to solve the problem that the same measuring device in the prior art can not measure high vacuum degree and low vacuum degree simultaneously. The application also provides a method for measuring the vacuum degree, so as to solve the problem that the same measuring method in the prior art cannot simultaneously measure the high vacuum degree and the low vacuum degree.
The application provides a device for measuring vacuum degree, includes: a power supply, an ammeter, an electrode, a semiconductor thin film material and a substrate;
the positive electrode and the negative electrode of the power supply are connected with the electrodes through leads; the current meter is arranged between the power supply and the electrode;
the electrode is connected with the semiconductor thin film material;
the semiconductor thin film material is deposited on the substrate.
Optionally, the electrode comprises a positive electrode and a negative electrode; and the anode and the cathode are both bonded with the semiconductor film material.
Optionally, the electrode is connected to the lead wire by at least one of elastic pressing pin, soldering, silver paste welding and ultrasonic pressing welding.
Optionally, the semiconductor thin film material is deposited on the substrate by at least one of a plasma enhanced chemical vapor deposition method, a magnetron sputtering method, a vacuum thermal evaporation method, an electron beam evaporation method, and a spin coating method.
Compared with the prior art, the method has the following advantages:
the application discloses measure device of vacuum degree includes: a power supply, an ammeter, an electrode, a semiconductor thin film material and a substrate; the positive electrode and the negative electrode of the power supply are connected with the electrodes through leads; the current meter is arranged between the power supply and the electrode; the electrode is connected with the semiconductor thin film material; the semiconductor thin film material is deposited on the substrate. The resistance of the semiconductor thin film material can be obtained through the voltage provided by the power supply and the current measured by the current meter, the resistance of the semiconductor thin film material of the vacuum degree measuring device and the vacuum degree of the device are in a quasi-linear relation, so that the vacuum degree in a larger range can be measured by measuring the resistance of the semiconductor thin film material, and the problem that the same measuring device in the prior art cannot simultaneously measure the defects of high vacuum degree and low vacuum degree is solved.
Drawings
Fig. 1 is a schematic structural diagram of a device for measuring vacuum degree according to an embodiment of the present disclosure.
Fig. 2 is a graph showing the variation of the resistance of the intrinsic amorphous silicon thin film material with the vacuum degree according to the first embodiment of the present disclosure.
Fig. 3 is an extended graph of a graph of the variation of the resistance of the intrinsic amorphous silicon thin film material with the vacuum degree according to the first embodiment of the present application.
FIG. 4 is a flow chart of a method for measuring vacuum level according to the second embodiment of the present application.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is capable of implementation in many different ways than those herein set forth and of similar import by those skilled in the art without departing from the spirit of this application and is therefore not limited to the specific implementations disclosed below.
The present application provides a device and a method for measuring a vacuum degree, and the following describes a structure and an operation principle of the device and the method for measuring a vacuum degree according to the present application with specific embodiments.
An embodiment of the present application provides a device for measuring a vacuum degree, as shown in fig. 1, which is a schematic structural diagram of the device for measuring a vacuum degree provided in this embodiment, where the device for measuring a vacuum degree includes: a power supply 101, a current meter 102, an electrode 103, a semiconductor thin film material 104, and a substrate 105. The device adopting the embodiment mainly utilizes the principle that the semiconductor film material has different resistance values under different vacuum degrees, and further indirectly measures the vacuum degree by obtaining the resistance value.
As shown in fig. 1, the positive and negative electrodes of the power source 101 are respectively connected to the electrodes 103 through wires; the electrode 103 includes a positive electrode and a negative electrode; the positive and negative electrodes of the electrode 103 are connected to the positive and negative electrodes of the power source 101, respectively. Specifically, in actual operation, the electrode 103 and the lead may be connected and fixed by using an elastic pressing pin, soldering, silver paste welding or ultrasonic bonding. Further, the ammeter 102 is mounted between the power source 101 and the electrode 103, that is, the ammeter 102 is mounted on a wire between the power source 101 and the electrode 103.
The power source 101 is connected to one end of the electrode 103, and the other end is connected to one side of the semiconductor thin film material 104. Specifically, the positive electrode and the negative electrode of the electrode 103 are bonded to one side of the semiconductor thin film material 104 in a specific manner. For example, when the electrode 103 and the semiconductor thin film material 104 are connected, an electrode thin film layer may be plated on one side of the semiconductor thin film material 104 by any one of magnetron sputtering, vacuum thermal evaporation, electron beam evaporation, and spin coating, thereby forming a contact structure between the semiconductor thin film material and the electrode.
In the above description, the connection of one side of the semiconductor thin film material 104 of the device has been explained, and the semiconductor thin film material 104 is deposited on the substrate 105 on the other side of the semiconductor thin film material 104. Specifically, the semiconductor thin film material 104 can be prepared on the substrate 105 by at least one of depositing the semiconductor thin film material 104 on the substrate 105 by using a plasma enhanced chemical vapor method, or a magnetron sputtering method, or a vacuum thermal evaporation method, or an electron beam evaporation method, or a spin coating method, for example.
The structure and connection of the vacuum degree measuring device have been explained above, and the material selection of the parts of the device will be described in the following description.
The electrode 103 can be at least one of the following materials as the electrode material of the vacuum degree measuring device of the present embodiment, for example, aluminum, gold, copper, silver or indium can be selected as the material of the electrode 103.
The substrate 105 of the present embodiment is an insulating material, and the substrate 105 may be at least one of the following materials as a substrate material of the vacuum degree measurement device of the present embodiment, for example, an insulating material such as glass or ceramic may be selected as a material of the substrate 105.
The semiconductor thin film material 104 of the present embodiment is, as the most important component of the detection device of the present embodiment, the semiconductor thin film material 104 may be at least one selected from the following materials as the semiconductor thin film material of the device for measuring vacuum degree of the present embodiment, for example, at least one of amorphous silicon doped with hydrogen, microcrystalline silicon, amorphous silicon germanium, and microcrystalline silicon germanium; or at least one of CIGS and CdTe intrinsic semiconductor thin film material; or at least one of n-type or p-type amorphous silicon, microcrystalline silicon, amorphous silicon germanium and microcrystalline silicon germanium semiconductor thin film materials doped with boron, phosphorus, arsenic, hydrogen and carbon; or at least one of indium tin oxide, tin oxide and zinc oxide transparent conductive oxide film materials doped with aluminum, antimony or fluorine. In addition, the semiconductor thin film material 104 of the present embodiment can be prepared by at least one of a plasma enhanced chemical vapor method, a magnetron sputtering method, a vacuum thermal evaporation method, an electron beam evaporation method, and a spin coating method.
The principle of the conductivity of the semiconductor thin film material of the present embodiment is described as follows.
The thin film material referred to in this embodiment is an amorphous or microcrystalline semiconductor thin film material having a low degree of crystallization, having defects in the material, and having a lower mass density than a single crystal or polycrystalline material. From the crystal structure, the amorphous or microcrystalline semiconductor film material has short-range order and long-range disorder; the single crystal material has long-range order; with polycrystalline material therebetween. Specific amorphous or microcrystalline thin film materials include amorphous silicon, microcrystalline silicon, amorphous silicon germanium, microcrystalline silicon germanium, and amorphous silicon germanium doped with hydrogen but not doped with boron or phosphorus, intrinsic semiconductor thin film materials such as copper indium gallium selenide and cadmium telluride doped with hydrogen but not doped with boron, phosphorus, and hydrogen, semiconductor thin film materials such as n-type or p-type amorphous silicon, microcrystalline silicon, amorphous silicon germanium, and microcrystalline silicon germanium doped with boron, phosphorus, arsenic, hydrogen, or carbon, and transparent conductive oxide thin film materials such as indium tin oxide, and zinc oxide doped with aluminum, antimony, or fluorine. Methods for obtaining these thin film materials may employ Plasma Enhanced Chemical Vapor Deposition (PECVD), magnetron sputtering, vacuum thermal evaporation, electron beam evaporation, spin coating, and the like. After that, these films were deposited on the substrate, thereby obtaining the semiconductor thin film material 104 of the apparatus for detecting a degree of vacuum of the present embodiment.
In the specific preparation process, the amorphous or microcrystalline semiconductor film material has a large number of defects inside the material due to preparation temperature, process, method and the like. In order to achieve some specific use purposes, the defect state density in the material needs to be reduced by annealing or doping and the like. Such as CIGS materials, by annealing to improve the crystallinity of the material; such as intrinsic amorphous silicon material, the density of defect states in the material is reduced by doping with hydrogen. In addition, the photoelectric properties of the semiconductor material can be changed by doping with an element such as boron, phosphorus, arsenic, aluminum, carbon, nitrogen, or germanium. For example, amorphous silicon material, carbon is doped to become wide band gap material, so that more short-wave light can transmit through the material; incorporation of germanium into a narrow bandgap material through which shortwave light is readily absorbed and not readily passed; boron is doped to become p-type amorphous silicon, the holes in the material are majority carriers, and the conduction type is hole conduction; phosphorus is doped to become n-type amorphous silicon, electrons in the material are majority carriers, and the conduction type is electron conduction. Boron-or phosphorus-doped p-or n-type semiconductor materials generally have a higher electrical conductivity, i.e. a higher electrical conductivity, than intrinsic semiconductor materials which are not doped with boron or phosphorus.
The conductivity of semiconductor thin film materials is not only influenced by internal factors such as: the defect state density, defect state types (such as dangling bonds, interface states and the like), band gap width, film thickness, length, surface structure and other inherent factors, and is also influenced by external factors such as an external electric field, a magnetic field, temperature, light, humidity, oxygen and the like. The effects of these internal and external factors on the conductive properties of semiconductor thin film materials tend to be relative: for example, some factors may be the primary factor in some cases, and others may be the primary factor in some cases. For example, the wide band gap zinc oxide transparent conductive film material has an optical band gap width of about 3.3eV when undoped, and can be adjusted to about 2.2eV after doped according to the difference of doping concentration. Because the band gap width is large, the energy required for electrons to jump from a valence band to a conduction band is high, so that the influence of the temperature and light on the conductivity of the material after doping is small, the influence of the doping concentration on the conductivity of the material is large, but the doping rate is high, the conductivity is reduced, and the transmittance is also reduced. For example, in the intrinsic amorphous silicon material, the optical band gap width is about 1.7eV, and since the band gap width is relatively small, the energy required for electrons to transit from the valence band to the conduction band is relatively low, and therefore the influence of temperature and light on the conductivity of the material is relatively large.
The vacuum is measured in a coplanar electrode configuration as shown in figure 1 using a suitable semiconductor thin film material, such as amorphous silicon, microcrystalline silicon, etc., within a suitable band gap width, such as 1.0eV ~ 2.0.2.0 eV.
In the embodiment of the present application, the semiconductor thin film material 104 in fig. 1 is an intrinsic amorphous silicon thin film material, and since the optical band gap width of the intrinsic amorphous silicon material is about 1.7eV, the band gap width is relatively small, the energy required for electrons to jump from the valence band to the conduction band is relatively low, and the influence of temperature and light on the conductivity of the material is relatively large, when the semiconductor thin film material 104 of the device shown in fig. 1 is an intrinsic amorphous silicon material, it is necessary to perform a dark room test, and it is ensured that the temperature change should be kept within ± 2 ℃. The apparatus is used under a dark room condition to ensure that factors such as light do not affect the conductivity of the semiconductor thin film material 104, i.e., the resistance of the semiconductor thin film material 104, and only the vacuum degree is set as the only factor affecting the resistance of the semiconductor thin film material 104, i.e., a quasi-linear relationship between the vacuum degree and the resistance of the semiconductor thin film material 104 is explored by a single-variable method.
The principle of measuring the degree of vacuum using this apparatus is described below. As shown in fig. 1, the distance between the two electrodes is the length L of the thin film material, L =550 μm in this example, the electrode width is the width W of the thin film material, W =16mm in this example, and the material thickness is d, d =300nm in this example. With these parameters fixed, according to the ohm's theorem formula, a fixed voltage V is applied to the electrodes at the two ends of the semiconductor thin-film material 104 by a dc voltage source, and the resistance R of the material can be obtained by measuring the current I passing through the semiconductor thin-film material 104 by an ammeter. In this embodiment, a fixed voltage of 50V is applied to the electrodes at the two ends of the semiconductor thin film material 104, the resistance of the intrinsic amorphous silicon thin film material is measured to increase with the increase of the vacuum degree, the obtained resistance relationship with the vacuum degree is shown in fig. 2, and fig. 2 is a graph showing the variation of the resistance of the intrinsic amorphous silicon thin film material with the vacuum degree.
The thick solid line in FIG. 2 is an experimental measurement value, from which it can be seen that the vacuum degree P is changed from 4Pa to 882Pa, the vacuum degree is increased by 878Pa, and the resistance R of the intrinsic amorphous silicon thin film material is from 6.66X 1011Omega to 4.99X 1012Omega, resistance increased by 4.32 x 1012Omega. Simply calculated as the change value, the average slope is 4.92X 109omega/Pa. In other words, the resistance R of the intrinsic amorphous silicon thin film material increases by 4.92X 10 for every 1Pa increase in the degree of vacuum9Omega, sensitivity 2.03X 10-10Pa/Ω, which is a very high sensitivity in comparison. The thin dashed line in fig. 2 is a trend line fitted from the thick solid line, and comparing the solid line measurements with the dashed line trend line, it can be seen that the resistance value in the solid line is not absolutely linear with the vacuum degree, but does not deviate much from the dashed line trend line, exhibiting substantially a quasi-linear relationship.
It has been mentioned in the background art that the same prior art vacuum level measuring device is not capable of measuring vacuum levels over a wide range from low vacuum to high vacuum. And the apparatus can measure a vacuum degree in a wide range from a low vacuum to a high vacuum, compared to the related art apparatus for measuring a vacuum degree.
It is mentioned above that the resistance R of the intrinsic amorphous silicon thin film material corresponding to a change in vacuum degree from 4Pa to 882Pa was measured using this apparatus. In the subsequent processing, the obtained quasi-linear relationship diagram of FIG. 2 can be obtained at 10 by adopting an extension line mode-5~105The vacuum degree of Pa is extended to obtain 10-5~105The quasi-linear relationship diagram of the resistance R of the intrinsic amorphous silicon thin film material in the Pa vacuum degree range and the vacuum degree is in practice 10 because the deviation between the solid line diagram and the dotted line diagram in the figure 2 is very small-5~105The Pa vacuum range is extended by the dotted line in fig. 2, the extended graph is shown in fig. 3,the extended dotted line is taken as 10-5~105And (3) a quasi-linear relation graph of the resistance R of the intrinsic amorphous silicon thin film material in the Pa vacuum degree range and the vacuum degree. To verify 10-5~105The vacuum degree measured by the device in the Pa vacuum degree range and the resistance of the intrinsic amorphous silicon film material show quasi-linear relationship, and the device is adopted to carry out comparison on 10-5~105And selecting points for verification according to data in the Pa vacuum degree range. It was found by verification that the vacuum value obtained via fig. 3 corresponds to the actual measured vacuum value. It should be noted that the consistency in the verification here means that the vacuum degree value obtained through fig. 3 and the actually measured vacuum degree value are within a specified threshold range. It should be noted that the specified threshold range may be a preset numerical range, and of course, the closer the two numerical values are, the more 10 is verified-5~105The vacuum degree measured by the device in the Pa vacuum degree range and the resistance of the intrinsic amorphous silicon thin film material show a quasi-linear relationship.
The specific verification process may be performed as described below.
First, according to said 10-5~105A quasi-linear relationship graph of resistance value and vacuum degree value in Pa vacuum degree range, at 882 ~ 105Pa and 10-5~ 4Pa, randomly selecting different resistance values within the vacuum degree range, and obtaining a first vacuum degree value corresponding to the selected resistance value.
And then, in practice, measuring a second vacuum degree value corresponding to the selected resistance value by using a vacuum degree measuring device in the prior art.
Finally, comparing the second vacuum degree value with the first vacuum degree value, and if the first vacuum degree value is within the threshold range of the second vacuum degree value, the first vacuum degree value is 10-5~105And in the Pa vacuum degree range, the resistance value of the semiconductor thin film material of the device for measuring the vacuum degree and the vacuum degree of the device for measuring the vacuum degree accord with a quasi-linear relation.
Verified at 10-5~105Within Pa vacuum degree range, vacuum degree and electricity of intrinsic amorphous silicon film materialThe resistances exhibit a quasi-linear relationship. Since the dashed line graph in fig. 2 does not greatly deviate from the thick solid line, 10 can be estimated using an extension line of the dashed line portion, that is, the resistance value-vacuum degree value relationship graph shown in fig. 3 and the resistance value measured using the device-5~105Vacuum degree value in Pa vacuum degree range.
In addition, the apparatus of this embodiment is a vacuum pressure sensor, and in the conventional vacuum degree detection apparatus, the measurement parameters mainly involved in the method for measuring the low vacuum degree are temperature (the measuring instrument is a thermocouple vacuum gauge), resistance (the measuring instrument is a resistance vacuum gauge) or capacitance (the measuring instrument is a capacitance type thin film vacuum gauge). However, the relationship between the parameter and the vacuum degree measured by the device is a non-linear relationship, so that a linear relationship between a certain parameter and the vacuum degree cannot be obtained. Although the conventional U-tube vacuum gauge measuring instrument (the measurement parameter is the height of mercury or alcohol) has a linear relationship between the measured height parameter and the vacuum degree, the measurement range is only low vacuum, the required liquid volume is large, the glass container is easy to break, the measurement range is small, and the accuracy is poor. Meanwhile, mercury is toxic, and the vapor pressure of alcohol is relatively high, so that the application range of the device is limited. Compared with the mercury U-shaped tube vacuum gauge in the prior art, the device for measuring the vacuum degree has the advantages of small volume, no toxicity, good safety and difficulty in damage. Meanwhile, the device of the embodiment can be used in a range from standard atmospheric pressure to high vacuum, namely, the measuring range is 10-5~105Pa, the same measuring device can be used for measuring the vacuum degree range from standard atmospheric pressure to high vacuum. And the electric signal is not easy to burn out and can be directly obtained. The electric signal and the vacuum degree are measured to find that the two have a better quasi-linear relation. In addition, when the device is used for measuring in a low vacuum degree range, the measuring precision of the device is higher than that of all the current low vacuum measuring methods, and the sensitivity is high.
The first embodiment of the present application provides a device for measuring a vacuum degree, and correspondingly, the second embodiment of the present application provides a method for measuring a vacuum degree. As shown in fig. 4, which is a flowchart of a method for measuring a vacuum degree according to the second embodiment of the present application, since the method is similar to the method for measuring the vacuum degree of the device according to the above embodiment, please refer to the related description part of the first embodiment, and the following measurement method is only exemplary.
The method for measuring the vacuum degree of the embodiment comprises the following steps:
and step S401, randomly taking points to obtain the resistance value of the semiconductor thin film material for measuring the vacuum degree in the vacuum degree range of 4 ~ 882Pa and under the dark room condition.
Step S402: and obtaining vacuum degree values corresponding to the different resistance values.
Step S403: and obtaining a quasi-linear relation graph of the resistance value and the vacuum degree value.
Step S404: extending the quasi-linear relationship graph to obtain 10-5~105And the quasi-linear relationship graph of the resistance value and the vacuum degree value in the Pa vacuum degree range.
It is mentioned above that the resistance R of the intrinsic amorphous silicon thin film material corresponding to a change in the degree of vacuum from 4Pa to 882Pa was measured using this method. In the subsequent treatment, the obtained quasi-linear relation graph of the resistance value and the vacuum degree value of the vacuum degree changing from 4Pa to 882Pa can be realized at 10 by adopting an extension line mode-5~105The vacuum degree of Pa is extended to obtain 10-5~105In practice, the quasi-linear relationship graph of the resistance R and the vacuum degree of the intrinsic amorphous silicon thin film material in the Pa vacuum degree range can be fitted with the quasi-linear relationship graph of the resistance value and the vacuum degree value of the intrinsic amorphous silicon thin film material with the vacuum degree ranging from 4Pa to 882Pa, so that the absolute linear relationship graph of the ideal resistance value and the vacuum degree value of the intrinsic amorphous silicon thin film material with the vacuum degree ranging from 4Pa to 882Pa can be obtained, and as shown by the dotted line of the first embodiment shown in the graph 2, the deviation between the solid line graph and the dotted line graph in the graph 2 is small and can also be-5~105The Pa vacuum degree range is extended by the broken line of FIG. 2, and the extended broken line is 10-5~105And (3) a quasi-linear relation graph of the resistance R of the intrinsic amorphous silicon thin film material in the Pa vacuum degree range and the vacuum degree.
Step S405: according to said 10-5~105And a quasi-linear relation graph of the resistance value in the Pa vacuum degree range and the vacuum degree value, and the resistance value of the semiconductor thin film material obtain the vacuum degree.
In a further embodiment of the method for detecting vacuum degree provided in this embodiment, it is further verified 10-5~105Whether the resistance value and the vacuum degree value in the Pa vacuum degree range accord with a quasi-linear relation or not. Specifically, the verification can be performed as described below.
First, by the above 10-5~105A quasi-linear relationship graph of resistance value and vacuum degree value in Pa vacuum degree range, at 882 ~ 105Pa and 10-5~ 4Pa, randomly selecting different resistance values within the vacuum degree range, and obtaining a first vacuum degree value corresponding to the selected resistance value.
And then, in practice, measuring a second vacuum degree value corresponding to the selected resistance value by using a vacuum degree measuring device in the prior art.
Finally, comparing the second vacuum degree value with the first vacuum degree value, and if the first vacuum degree value is within the threshold range of the second vacuum degree value, the first vacuum degree value is 10-5~105And in the Pa vacuum degree range, the resistance value of the semiconductor thin film material of the device for measuring the vacuum degree and the vacuum degree of the device for measuring the vacuum degree accord with a quasi-linear relation.
Although the present application has been described with reference to the preferred embodiments, it is not intended to limit the present application, and those skilled in the art can make variations and modifications without departing from the spirit and scope of the present application, therefore, the scope of the present application should be determined by the claims that follow.
Claims (4)
1. An apparatus for measuring a degree of vacuum, comprising: a power supply, an ammeter, an electrode, a semiconductor thin film material and a substrate;
the positive electrode and the negative electrode of the power supply are connected with the electrodes through leads; the current meter is arranged between the power supply and the electrode;
the electrode is connected with the semiconductor thin film material;
the semiconductor thin film material is deposited on the substrate.
2. The apparatus for measuring a degree of vacuum of claim 1, wherein the electrodes comprise a positive electrode and a negative electrode; and the anode and the cathode are both bonded with the semiconductor film material.
3. The apparatus of claim 1, wherein the electrode is connected to the lead by at least one of elastic pressing pin, soldering, silver paste welding, and ultrasonic pressing.
4. The apparatus of claim 1, wherein the semiconductor thin film material is deposited on the substrate by at least one of plasma enhanced chemical vapor deposition, magnetron sputtering, vacuum thermal evaporation, electron beam evaporation, and spin coating.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110231120A (en) * | 2019-05-24 | 2019-09-13 | 南开大学 | A kind of apparatus and method of measurement of vacuum |
| CN114812924A (en) * | 2022-04-12 | 2022-07-29 | 兰州空间技术物理研究所 | High-precision data acquisition and display interaction equipment for vacuum gauge |
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2019
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110231120A (en) * | 2019-05-24 | 2019-09-13 | 南开大学 | A kind of apparatus and method of measurement of vacuum |
| CN114812924A (en) * | 2022-04-12 | 2022-07-29 | 兰州空间技术物理研究所 | High-precision data acquisition and display interaction equipment for vacuum gauge |
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