CN209974887U - High density plasma chemical vapor deposition equipment and radio frequency power supply cabinet thereof - Google Patents
High density plasma chemical vapor deposition equipment and radio frequency power supply cabinet thereof Download PDFInfo
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- CN209974887U CN209974887U CN201920429399.3U CN201920429399U CN209974887U CN 209974887 U CN209974887 U CN 209974887U CN 201920429399 U CN201920429399 U CN 201920429399U CN 209974887 U CN209974887 U CN 209974887U
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 53
- 239000003990 capacitor Substances 0.000 claims description 28
- 230000000087 stabilizing effect Effects 0.000 claims description 8
- 230000006641 stabilisation Effects 0.000 claims description 4
- 238000011105 stabilization Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Abstract
The utility model discloses a high density plasma chemical vapor deposition equipment and a radio frequency power supply cabinet thereof, the high density plasma chemical vapor deposition equipment comprises a plurality of reaction cavities, and each reaction cavity is electrically connected with a plurality of switching type radio frequency power supplies arranged in the corresponding radio frequency power supply cabinet; each switching type radio frequency power supply is connected with a mains supply alternating current power supply, and an alternating current-direct current converter is not required to be additionally arranged in the shell, so that the space is saved; in addition, each switching type radio frequency power supply converts commercial power alternating current power supply into radio frequency power supply by pulse width modulation technology, so that a common power transistor can replace a vacuum tube, and the volume and the cost are reduced; because the use of vacuum tubes is avoided, the radio frequency power supplies do not need to continuously supply power to preheat the vacuum tubes during standby time, and the overall power conversion rate can be improved.
Description
Technical Field
The present invention relates to a radio frequency power supply cabinet for semiconductor equipment, and more particularly to a radio frequency power supply cabinet for high density plasma chemical vapor deposition equipment.
Background
In 8 inch thin film equipment of semiconductor, high density plasma chemical vapor deposition equipment 20(HDPCVD) provided by AMAT (AMAT) has higher plasma concentration, as shown in fig. 3, in a plurality of radio frequency power cabinets 40 used with the HDPCVD, each radio frequency power cabinet 40 includes a plurality of radio frequency power supplies 50 mixed by medium and high frequency plasma up to 5kW, each radio frequency power supply 50 provides radio frequency power to the upper coil 211, the side coil 212 and the bias electrode 213 of the corresponding reaction chamber 21 through the cable wires 43, thereby improving the thin film hole filling capability of the reaction chamber 21; however, the use of the high power RF power supply 50 can achieve the aforementioned effects, but also causes relatively high power damage.
Further, it is found that each high power rf power supply 50 uses a vacuum tube as a main electronic component of its amplifier, and in the standby state, because the vacuum tube has a preheating characteristic, it is necessary to continuously supply power to the rf power supply 50; in addition, the standby power loss of each rf power supply 50 in the rf power cabinet 40 is measured to be about 10000W, and the optimal power conversion rate is only 30% in a state of full load output of 5000W; therefore, the overall power conversion rate of the rf power cabinet 40 is relatively poor. In addition, because the power conversion rate of the rf power cabinet 40 is poor, waste heat is easily generated during operation to cause a rapid temperature rise, and a water-cooled cooling system must be additionally provided to maintain a normal operating temperature in order to ensure the normal operation of the rf power cabinet 40.
In addition, the rf power cabinet 40 includes an ac-to-dc power converter 60, which is connected to the ac mains power through a power line 42, converts the ac mains power into about 50V dc power, and then outputs the dc power to the rf power supplies 50, as shown in fig. 4, each rf power supply 50 provides 5kW of rf power, so the ac-to-dc power converter 60 must be connected to each rf power supply 50 through a cable 61 with a larger diameter, and controlled by using a power element with a large current tolerance; therefore, the housing 41 of the rf power cabinet 40 must be large enough to accommodate the cable wires 61, power components, and cooling pipes, and occupies a relatively large space.
The semiconductor equipment has large power consumption, and the amount of electric charge paid by a semiconductor manufacturer is considerable; therefore, how to effectively reduce the power consumption of semiconductor devices has been the primary improvement goal of each fab.
SUMMERY OF THE UTILITY MODEL
In view of the technical defects of poor power conversion efficiency and overlarge size of the radio frequency power cabinet used by the high-density plasma chemical vapor deposition equipment, the present invention provides a high-density plasma chemical vapor deposition equipment and a radio frequency power cabinet thereof to overcome the technical defects.
The main technical means used to achieve the above purpose is to make the high density plasma chemical vapor deposition apparatus include:
a plurality of reaction chambers; and
a plurality of radio frequency power supply cabinets which are respectively and electrically connected to the corresponding reaction cavities and provide radio frequency power supply to each reaction cavity, wherein each radio frequency power supply cabinet comprises:
a housing; and
and a plurality of switching type radio frequency power supplies which are accommodated in the shell and are respectively and electrically connected between the commercial power alternating current power supply and the plurality of reaction cavities, and the commercial power alternating current power supply is subjected to pulse width modulation and is converted into a radio frequency power supply and then is transmitted to the corresponding reaction cavities.
The switching radio frequency power supplies are stacked in the shell and are connected to the corresponding reaction cavities through cables.
Wherein each switching type radio frequency power supply comprises:
a first AC/DC conversion circuit, the first input end of which is connected to the AC power supply; wherein the first input terminal is a power input terminal of the switching type radio frequency power supply;
a first filter capacitor connected to the first output terminal of the first ac/dc conversion circuit;
a transformer including a primary coil and a secondary coil;
a power transistor connected in series between the first filter capacitor and the primary side coil of the transformer;
a voltage stabilizing controller connected to the control end of the power transistor and controlling the power transistor to be turned on or off according to a pulse width modulation signal;
a second ac/dc conversion circuit, a second input terminal of which is connected to the secondary side coil of the transformer, and a second output terminal of which is connected to the voltage stabilization controller;
the second filter capacitor is connected to the second output end of the second alternating current-direct current conversion circuit;
a shunt drain resistor connected in parallel with the second filter capacitor; and
and the radio frequency amplifier is connected with two ends of the second filter capacitor and the side leakage resistor in parallel to provide and output a radio frequency power supply, and the radio frequency power supply output end of the radio frequency amplifier is the power supply output end of the switching type radio frequency power supply.
Wherein the high-density plasma chemical vapor deposition equipment is the high-density plasma chemical vapor deposition equipment for 8-inch wafers.
It can be known from the above description that the present invention is mainly provided with a plurality of switching type radio frequency power supplies in the radio frequency power cabinet of the high density plasma chemical vapor deposition equipment, each switching type radio frequency power supply is connected with the commercial power alternating current power supply, it is unnecessary to additionally arrange an alternating current/direct current converter in the casing, and further save the cable wire for using the large current and the electric power element with the large current tolerance, and each switching type radio frequency power supply converts the commercial power alternating current power supply into the radio frequency power supply by the pulse width modulation technology, so that the use of the vacuum tube can be replaced by the general power transistor, and the volume and the cost can be reduced; because the use of vacuum tubes is avoided, the radio frequency power supplies do not need to preheat the vacuum tubes during standby time to waste redundant power, and the power conversion rate of the whole radio frequency power cabinet can be improved.
The main technical means used to achieve the above purpose is to make the RF power cabinet of the high density plasma chemical vapor deposition equipment include:
a housing; and
and a plurality of switching type radio frequency power supplies which are accommodated in the shell and are respectively and electrically connected between a commercial power alternating current power supply and one of the reaction cavities of the high-density plasma chemical vapor deposition equipment, and the commercial power alternating current power supply is subjected to pulse width modulation and is converted into a radio frequency power supply and then is transmitted to the reaction cavities.
Wherein, the switching type radio frequency power supplies are stacked in the casing.
Wherein each switching type radio frequency power supply comprises:
a first AC/DC conversion circuit, the first input end of which is connected to the AC power supply; wherein the first input terminal is a power input terminal of the switching type radio frequency power supply;
a first filter capacitor connected to the first output terminal of the first ac/dc conversion circuit;
a transformer including a primary coil and a secondary coil;
a power transistor connected in series between the first filter capacitor and the primary side coil of the transformer;
a voltage stabilizing controller connected to the control end of the power transistor and controlling the power transistor to be turned on or off according to a pulse width modulation signal;
a second ac/dc conversion circuit, a second input terminal of which is connected to the secondary side coil of the transformer, and a second output terminal of which is connected to the voltage stabilization controller;
the second filter capacitor is connected to the second output end of the second alternating current-direct current conversion circuit; and
a shunt drain resistor connected in parallel with the second filter capacitor; and
and the radio frequency amplifier is connected with two ends of the second filter capacitor and the side leakage resistor in parallel to provide and output a radio frequency power supply, and the radio frequency power supply output end of the radio frequency amplifier is the power supply output end of the switching type radio frequency power supply.
It can be known from the above description that the utility model discloses be provided with a plurality of switching formula radio frequency power supply in the radio frequency power supply rack, each should switch formula radio frequency power supply and connect commercial power alternating current power supply separately, needn't additionally set up the alternating current-direct current converter in the casing, and further save the cable wire that uses the heavy current and the electric power component of heavy current tolerance, and each should switch formula radio frequency power supply and change commercial power alternating current power supply into radio frequency power supply with pulse width modulation technique in addition, can general power transistor replace the use of vacuum tube, volume and cost can be reduced; because the use of vacuum tubes is avoided, the radio frequency power supplies do not need to preheat the vacuum tubes during standby time to waste redundant power, and the power conversion rate of the whole radio frequency power cabinet can be improved.
The present invention will be described in detail with reference to the accompanying drawings and specific embodiments, but the present invention is not limited thereto.
Drawings
FIG. 1: high density plasma chemical vapor deposition equipment in the semiconductor factory building and the radio frequency power supply cabinet of the utility model are schematically arranged.
FIG. 2A: the utility model discloses radio frequency power supply rack and a plurality of reaction cavity's power line connection schematic diagram.
FIG. 2B: the present invention is a circuit diagram of an embodiment of a radio frequency power supply.
FIG. 3: the high density plasma chemical vapor deposition equipment and the existing RF power cabinet in the semiconductor factory are schematically arranged.
FIG. 4: the utility model discloses radio frequency power supply rack and a plurality of reaction cavity's power line connection schematic diagram.
Wherein, the reference numbers:
10 radio frequency power supply cabinet 11 shell
12 power line 13 cable wire
20 high density plasma chemical vapor deposition equipment 21 reaction cavity
211 upper coil 212 side coil
213 bias electrode 30 switching type RF power supply
31 first ac-dc converter circuit 32 first filter capacitor
33 transformer 331 voltage-stabilizing controller
34 power transistor 35 second ac-dc converter circuit
36 second filter capacitor 37 shunt leakage resistor
38 radio frequency amplifier 40 radio frequency power supply cabinet
41 casing 42 power cord
43 cable and wire 50 radio frequency power supply
60 AC-DC power converter 61 cable wire
Detailed Description
The present invention is an improvement of a radio frequency power supply cabinet of a high density plasma chemical vapor deposition device (HDPCVD) for 8 inch wafers, and the technical content of the present invention will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, a schematic diagram of a high density plasma chemical vapor deposition apparatus 20 and a plurality of rf power cabinets 10 thereof is installed in a semiconductor factory, wherein the high density plasma chemical vapor deposition apparatus 20 includes a plurality of reaction chambers 21, each of the rf power cabinets 10 includes a housing 11 and a plurality of switching rf power supplies 30, and the switching rf power supplies 30 are accommodated in the housing 11 and electrically connected to the corresponding reaction chambers 21 through a plurality of cable wires 13, respectively; in the present embodiment, the switching rf power supplies 30 are stacked in the housing 11 and electrically connected between the ac mains power supply (e.g. 208V) and the reaction cavities 21 through a plurality of power lines 12, as shown in fig. 2A, so as to convert the ac mains power supply into the rf power supply after pulse width modulation, and then respectively transmit the rf power supply to the upper coil 211, the side coil 212, and the bias electrode 213 of the corresponding reaction cavity 21.
Referring to fig. 2B, each of the switching rf power supplies 30 includes a first ac/dc converting circuit 31, a first filter capacitor 32, a transformer 33, a power transistor 34, a voltage regulator controller 331, a second ac/dc converting circuit 35, a second filter capacitor 36, a bypass resistor 37, and an rf amplifier 38; wherein a first input terminal of the first AC/dc conversion circuit 31 is connected to the AC/IN of the utility power supply to convert the voltage of the AC power supply into a dc link wave voltage; wherein the first input terminal AC/IN is the power input terminal of the switching RF power supply.
The first filter capacitor 32 is connected to the first output end of the first ac/dc converting circuit, and further filters the dc link wave voltage of the first ac/dc converting circuit 31 into a dc voltage.
The transformer 34 includes a primary coil 341 and a secondary coil 342; the power transistor 33 is connected in series between the filter capacitor 32 and the primary coil 341 of the transformer 34, and the control end thereof is connected to the voltage stabilizing controller 331, and the voltage stabilizing controller 331 controls the on/off of the power transistor 34 according to a pwm signal. In the present embodiment, the power transistor is a BJT transistor, and a MOSFET transistor can also be used.
The second ac/dc converting circuit 35 has a second input terminal connected to the secondary winding 342 of the transformer 34, and a second output terminal connected to the voltage stabilizing controller 331, wherein the voltage stabilizing controller 331 can adjust the pulse width ratio of the pulse width modulation signal according to the output voltage variation of the second ac/dc converting circuit 35 to maintain the output voltage of the second ac/dc converting circuit 35 stable.
The second filter capacitor 36 is connected to the second output terminal of the second ac/dc converting circuit 35, and is connected in parallel to a bypass resistor 37; the two parallel ends of the second filter capacitor 36 and the side-leakage resistor 37 are connected to the RF amplifier 38 to provide and output RF power, and the RF power output terminal RF/OUT is the power output terminal of the switching RF power supply 30.
The following table shows the power consumption estimation of the single rf power cabinet 40 shown in fig. 3 and the single rf power cabinet 10 shown in fig. 1 according to the present invention using for one year:
as can be seen from the above table, the single rf power cabinet 10 of the present invention can save 287,970kWh power consumption and relatively save power consumption cost in one year compared with the rf power cabinet 40 shown in fig. 3 under normal operation, for example: if the price is charged by 3.5 yuan per degree of electricity, the annual electricity consumption can be saved by 1,007,893 yuan, which is quite considerable.
To sum up, the utility model discloses be provided with a plurality of switching formula radio frequency power supply in the radio frequency power supply rack, each should switch formula radio frequency power supply and connect commercial power alternating current power supply separately, needn't additionally set up the alternating current-direct current converter in the casing, and further save the cable wire that uses the heavy current and the electric power component of heavy current tolerance, and each should switch formula radio frequency power supply and change commercial power alternating current power supply into radio frequency power supply with pulse width modulation technique in addition, can general power transistor replace the use of vacuum tube, volume and cost can be reduced; because the use of vacuum tubes is avoided, the radio frequency power supplies do not need to preheat the vacuum tubes during standby time to waste redundant power, and the power conversion rate of the whole radio frequency power cabinet can be improved. Furthermore, because the power conversion rate improves, the production of reducible used heat, the utility model discloses the temperature rise is slower than the radio frequency power supply that figure 4 shows during the function of switching formula radio frequency power supply, so can make the cooling pipeline of less pipe diameter, comparatively reduce equally in the volume.
The foregoing is illustrative of the present invention and is not to be construed as limiting thereof, and the present invention is not intended to be limited thereto. Of course, the present invention can also have other various embodiments, and any person skilled in the art who has common knowledge can make some changes or modifications to the equivalent embodiment with equivalent changes by using the technical content disclosed above without departing from the spirit and the scope of the present invention, and any simple modification, equivalent change and modification made to the above embodiments according to the technical content of the present invention still fall within the scope of the present invention and the protection of the claims.
Claims (7)
1. A high density plasma chemical vapor deposition apparatus, comprising:
a plurality of reaction chambers; and
a plurality of radio frequency power supply cabinets which are respectively and electrically connected to the plurality of reaction cavities and provide radio frequency power supply for each reaction cavity; wherein each radio frequency power supply cabinet comprises:
a housing; and
and a plurality of switching type radio frequency power supplies which are accommodated in the shell and are respectively and electrically connected between the commercial power alternating current power supply and the plurality of reaction cavities, and the commercial power alternating current power supply is subjected to pulse width modulation and is converted into a radio frequency power supply and then is transmitted to the corresponding reaction cavities.
2. The apparatus of claim 1, wherein the plurality of switching RF power supplies are stacked in the housing, and each switching RF power supply is connected to the corresponding reaction chamber by a cable.
3. The HDP CVD apparatus of claim 1 or 2, wherein each of the switching RF power supplies comprises:
a first AC/DC conversion circuit, the first input end of which is connected to the AC power supply; wherein the first input terminal is a power input terminal of the switching type radio frequency power supply;
a first filter capacitor connected to the first output terminal of the first ac/dc conversion circuit;
a transformer including a primary coil and a secondary coil;
a power transistor connected in series between the first filter capacitor and the primary side coil of the transformer;
a voltage stabilizing controller connected to the control end of the power transistor and controlling the power transistor to be turned on or off according to a pulse width modulation signal;
a second ac/dc conversion circuit, a second input terminal of which is connected to the secondary side coil of the transformer, and a second output terminal of which is connected to the voltage stabilization controller;
the second filter capacitor is connected to the second output end of the second alternating current-direct current conversion circuit;
a shunt drain resistor connected in parallel with the second filter capacitor; and
and the radio frequency amplifier is connected with two ends of the second filter capacitor and the side leakage resistor in parallel to provide and output a radio frequency power supply, and the radio frequency power supply output end of the radio frequency amplifier is the power supply output end of the switching type radio frequency power supply.
4. The apparatus of claim 1, which is a high density plasma chemical vapor deposition apparatus for 8 inch wafers.
5. A radio frequency power supply cabinet of a high density plasma chemical vapor deposition device is characterized by comprising:
a housing; and
and a plurality of switching type radio frequency power supplies which are accommodated in the shell and are respectively and electrically connected between a commercial power alternating current power supply and one of the reaction cavities of the high-density plasma chemical vapor deposition equipment, and the commercial power alternating current power supply is subjected to pulse width modulation and is converted into a radio frequency power supply and then is transmitted to the reaction cavities.
6. The RF power cabinet of claim 5, wherein the plurality of switching RF power supplies are stacked within the enclosure.
7. The RF power cabinet of claim 5 or 6, wherein each switching RF power supply comprises:
a first AC/DC conversion circuit, the first input end of which is connected to the AC power supply; wherein the first input terminal is a power input terminal of the switching type radio frequency power supply;
a first filter capacitor connected to the first output terminal of the first ac/dc conversion circuit;
a transformer including a primary coil and a secondary coil;
a power transistor connected in series between the first filter capacitor and the primary side coil of the transformer;
a voltage stabilizing controller connected to the control end of the power transistor and controlling the power transistor to be turned on or off according to a pulse width modulation signal;
a second ac/dc conversion circuit, a second input terminal of which is connected to the secondary side coil of the transformer, and a second output terminal of which is connected to the voltage stabilization controller;
the second filter capacitor is connected to the second output end of the second alternating current-direct current conversion circuit; and
a shunt drain resistor connected in parallel with the second filter capacitor; and
and the radio frequency amplifier is connected with two ends of the second filter capacitor and the side leakage resistor in parallel to provide and output a radio frequency power supply, and the radio frequency power supply output end of the radio frequency amplifier is the power supply output end of the switching type radio frequency power supply.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107205026U TWM563715U (en) | 2018-04-18 | 2018-04-18 | High-density plasma chemical vapor deposition equipment and its radio frequency power supply cabinet |
| TW107205026 | 2018-04-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209974887U true CN209974887U (en) | 2020-01-21 |
Family
ID=63641365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920429399.3U Active CN209974887U (en) | 2018-04-18 | 2019-04-01 | High density plasma chemical vapor deposition equipment and radio frequency power supply cabinet thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN209974887U (en) |
| TW (1) | TWM563715U (en) |
-
2018
- 2018-04-18 TW TW107205026U patent/TWM563715U/en unknown
-
2019
- 2019-04-01 CN CN201920429399.3U patent/CN209974887U/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWM563715U (en) | 2018-07-11 |
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