CN209941087U - Cutter tray for microwave plasma diamond film deposition device - Google Patents
Cutter tray for microwave plasma diamond film deposition device Download PDFInfo
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- CN209941087U CN209941087U CN201920295875.7U CN201920295875U CN209941087U CN 209941087 U CN209941087 U CN 209941087U CN 201920295875 U CN201920295875 U CN 201920295875U CN 209941087 U CN209941087 U CN 209941087U
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Abstract
The utility model provides a cutter tray for among microwave plasma deposit diamond film device contains one and is the circular shape microwave plasma substrate platform, the substrate bench sets up a tray and is the circular shape tray, the cutter that contains the metal composition is placed to the top of tray, utilizes microwave excitation's plasma, at cutter surface deposit CVD diamond film, the tray upper surface has a plurality of cylindrics or round platform form arch, and the clearance at the jut is placed to the cutter that contains the metal composition. A uniform diamond film is deposited on the surface of the tool containing the metal component using a Microwave Plasma (MPCVD) method. Relates to a method for improving the MPCVD method for depositing a uniform diamond film on the surface of a cutter containing metal components by designing the surface of a cutter tray to be convex, reducing the influence of the nonuniformity of the surface deposited diamond film of the cutter containing the metal components in a microwave field due to point discharge. The improvement of the surface shape of the cutter tray has low cost and simple and convenient operation.
Description
Technical Field
The utility model belongs to the technical field of vacuum microelectronics, concretely relates to device of preparation diamond film and use device is at the method of the cutter surface preparation diamond film that contains the metal composition.
Background
The fourth state of the plasma as a substance follows from the solid state, the liquid state and the gas state, and the plasma has wide application in many fields. To make the material in a plasma state, a certain amount of energy needs to be supplied. Microwave plasma technology is widely used in many fields because it is relatively easy to excite a gas into a plasma state as an electromagnetic wave.
The Microwave Plasma Chemical Vapor Deposition (MPCVD) device generally comprises a microwave system, a vacuum system, a gas supply system and a plasma reaction chamber, wherein a self-rotating substrate table is arranged in the plasma reaction chamber, for example, for preparing a diamond film, microwaves generated by the microwave system enter the plasma reaction chamber, gas provided by the gas supply system is excited above the self-rotating substrate table to generate a plasma ball, the plasma ball is tightly attached to the surface of a film-forming substrate material, and the diamond film can be deposited on the surface of the substrate table by adjusting different reaction gases and adjusting the process parameters of the plasma.
The diamond film is deposited on the surface of the cutter containing the metal components, so that the service life of the cutter can be greatly prolonged, and the processing quality can be improved. Due to the cutting-specific requirements of the tool, the cutting head is often designed with a sharp profile. The cutting tools with sharp shapes, especially the cutting tools containing metal components, often form a 'point discharge' phenomenon in a microwave electric field, so that the plasma density near the cutting head of the cutting tool is very high, the rate of depositing the diamond film on the surface of the cutting head is very high, the rate is greatly higher than that of depositing the diamond film on other parts of the cutting tool, and finally, the diamond film near the cutting head is often too thick to fall off, so that the uniform diamond film cannot be deposited on the surface of the cutting tool.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that to the above-mentioned not enough that exists among the prior art, provide a cutter tray that is arranged in microwave plasma deposit diamond film device, contain one and be circular shape used microwave plasma substrate platform for circular shape, the substrate bench sets up a cutter tray for being circular shape tray, the cutter that contains the metal composition is placed to its top of tray, utilizes microwave excitation's plasma, at cutter surface deposit CVD diamond film, the upper surface of tray has a plurality of cylindrics or round platform form arch, and the cutter that contains the metal composition is placed in the clearance of jut.
Alternatively, the upper surface thereof has a plurality of cylindrical or truncated cone-shaped projections, and the metal component-containing tool is placed in the gaps of the projections.
Optionally, the cutter tray and raised elements are metallic W or metallic Mo or alloys containing W or Mo.
Alternatively, the diameters of the horizontal sections of the cylindrical or truncated cone-shaped protrusions may be the same or different.
Optionally, if the diameters of the horizontal cross sections of the cylindrical or truncated cone-shaped protrusions are different, the diameter of the protrusion which is closer to the center of the substrate table is larger, and the diameter of the protrusion which is farther from the center of the substrate table is smaller.
Alternatively, the height of the cylindrical or frustoconical protrusions may or may not be the same. If not, the height of the projection is lower when the projection is closer to the center of the substrate table, and the height of the projection is higher when the projection is farther from the center of the substrate table. Preferably, the protrusions comprise thick protrusions and thin protrusions, wherein the thick protrusions are 4.0 mm in diameter and 9.0 mm in height; the diameter of the fine bump is 2.0 mm, and the height is 9.0 mm.
Optionally, the protrusions are all higher than the height of the metal component containing tool.
The utility model also provides a be used for adopting microwave plasma chemical vapor deposition device, the device include microwave system, vacuum system, gas supply system and plasma reacting chamber, are equipped with a autogyration substrate platform in the plasma reacting chamber, and the microwave that microwave system produced gets into the plasma reacting chamber in the working process, excites the gaseous plasma ball that produces that the gas supply system provided in autogyration substrate bench side.
The utility model provides an utilize microwave plasma CVD method, at the cutter tray design of the even diamond film of cutter surface deposit that contains metal composition, the purpose forms even plasma distribution on the cutter surface to obtain the deposit of the diamond film of even thickness.
The purpose of the metal projection is to guide a strong electric field originally near the cutter head containing the metal component to the top end of the metal projection, and carry out point discharge at the top end of the projection so as to transfer the discharge at the tip end of the cutter; the change of the diameter of the bulge is characterized in that the metal object which is more pointed is more easy to discharge in the microwave electric field, and according to the characteristics of large central electric field intensity and small edge electric field intensity of a plasma ball in microwave plasma, the edge of the cutter tray is provided with the bulge which is more pointed, so that discharge can be maintained in a weaker electric field environment, the energy of the plasma ball excited by the microwave can be properly dispersed to the periphery from a central concentrated region, and the uniformity of plasma energy distribution is improved. The uniformity of the diamond film deposited on the surface of the cutter on the substrate table is improved.
Drawings
Fig. 1 is a front view of a knife tray and knife placement.
Fig. 2 is a schematic top view of the knife tray and knife arrangement in embodiment 1.
Fig. 3 is a schematic top view of the knife tray and knife arrangement in embodiment 2.
Reference numerals: 1. plasma; 2. a thick cylindrical projection; 3. a cutting tool containing a metal component; 4. a fine cylindrical projection; 5. a tray; 6. a substrate stage.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the present invention will be further described in detail with reference to the following embodiments.
Referring to fig. 1-3, in order to realize an embodiment of the present invention, the present invention comprises a cutter tray for use in a microwave plasma diamond film deposition apparatus, wherein a substrate table (6) for use with a circular microwave plasma (1) is circular, a cutter tray for use with a circular tray (5) is provided on the substrate table (6), a cutter (3) containing a metal component is placed on the tray, a CVD diamond film is deposited on the surface of the cutter by using a microwave-excited plasma, the upper surface of the cutter tray has a plurality of cylindrical or truncated cone-shaped protrusions (2, 4), and the cutter containing the metal component is placed in the gaps between the protrusions.
Example 1:
the diameter of the substrate table is 60 mm; the diameter of the cutter tray is 60 mm, the thickness of the tray is 4.0 mm, the tray is made of metal Mo (the melting point of Mo is 2620 ℃, and the relative stability can be kept in a CVD diamond film deposition environment), the surface of the tray is flat, and no bulge is arranged on the upper surface; the blade was tajo diamond YG6(42510H8) (approximate geometry: 22 × 8.5mm), 4 blades. The specific arrangement is shown in figure 2.
The deposition process parameters of the diamond film are as follows: microwave power is 3500W, deposition pressure is 11.5kPa, H2And CH4The flow ratio of (1) to (2.0) (sccm), the deposition temperature of 850 ℃ and the deposition time of 8.0 h. (Note: sccm: standard cubic centimeters per minute).
The results were: in the process of cooling the cutter, the diamond film of the cutter near the cutter head falls off, and the thickness of the diamond film measured after falling off is 13.7 microns; the diamond film on the non-tool bit area of the surface of the cutter does not fall off, and the thickness of the diamond film is measured to be 4.7-4.9 micrometers. The rate of diamond film deposition on the surface of the cutter is 2.8-2.9 times that on the surface of the cutter body at the position of the cutter head.
Example 2:
the model of the cutter for depositing the diamond film is as follows: tajo diamond YG6(42510H 8); the diameter of the substrate table is 60 mm; the tray diameter is 60 millimeters, and tray thickness 4.0 millimeters, tray material are metal Mo, and the tray upper surface has set up the arch, and the arch is cylindricly, and the material is metal Mo, and the diameter is respectively: the diameter of the coarse bulge (2) is 4.0 mm, and the height of the coarse bulge (2) is 9.0 mm (slightly higher than the height of the blade); the fine protrusions (4) have a diameter of 2.0 mm (both 4.0 and 2.0 mm diameter Mo cylinders are standard specifications for commercial sale) and a height of 9.0 mm; the bulge is welded on the upper surface of the cutter tray; 4 blades. The specific arrangement is shown in figure 3.
The deposition process parameters of the diamond film are as follows: microwave power 4000W, deposition pressure 11.5kPa, H2And CH4The flow ratio of (1) to (2.0) (sccm), the deposition temperature of 850 ℃ and the deposition time of 8.0 h.
The results were: after the cutter is cooled, the diamond film at the cutter head of the cutter does not fall off, the thickness of the diamond film at the cutter head of the cutter is measured to be 4.8 micrometers, and the thickness of the diamond film at the non-cutter head is measured to be 4.5-4.6 micrometers. The diamond film on the surface of the cutter is uniformly distributed. The rate of diamond film deposition on the surface of the cutter is 1.04-1.07 times that on the surface of the cutter body at the position of the cutter head.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (9)
1. A cutter tray used in a microwave plasma diamond film deposition device is characterized by comprising a circular microwave plasma substrate table, wherein the substrate table is provided with a circular tray, a cutter containing metal components is placed above the tray, a CVD diamond film is deposited on the surface of the cutter by utilizing microwave-excited plasma, the upper surface of the tray is provided with a plurality of cylindrical or truncated cone-shaped bulges, and the cutter containing the metal components is placed in the gaps of the bulges.
2. The cutter tray of claim 1 wherein: the tray and the convex components are metal W or metal Mo or an alloy containing W or Mo.
3. The cutter tray of claim 1, wherein the diameter of each cylindrical or frustoconical protuberance is the same.
4. The tool tray of claim 1, wherein the diameters of the cylindrical or frustoconical projections are different, and wherein the diameter of the projections closer to the center of the substrate table is larger and the diameter of the projections farther from the center of the substrate table is smaller.
5. The cutter tray of claim 4, wherein the projections comprise coarse projections and fine projections, wherein the coarse projections are 4.0 mm in diameter and 9.0 mm in height; the diameter of the fine bump is 2.0 mm, and the height is 9.0 mm.
6. The cutter tray of claim 1 or 2, wherein the height of the cylindrical or frustoconical protrusions is the same.
7. The tool tray according to claim 1 or 2, wherein the height of the cylindrical or truncated cone-shaped protrusions is different, and the height of the protrusions is lower as the protrusions are closer to the center of the substrate table, and the height of the protrusions is higher as the protrusions are farther from the center of the substrate table.
8. Tool tray according to any one of claims 1-5, characterized in that the height of the protrusions is higher than the height of the tools containing the metal component.
9. An apparatus for preparing a diamond film on a surface of a cutter containing a metal component by a microwave plasma method, comprising the substrate table according to any one of claims 1 to 8 being circular, a circular tray being placed above the substrate table: the plasma reaction chamber is characterized by further comprising a microwave system, a vacuum system, a gas supply system and a plasma reaction chamber, wherein the tray is placed on the substrate table and arranged in the plasma reaction chamber, the cutter containing the metal components is placed on the tray, microwave energy generated by the microwave system enters the plasma reaction chamber in the working process, and gas provided by the gas supply system is excited above the tray on which the cutter containing the metal components is placed to generate plasma balls.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920295875.7U CN209941087U (en) | 2019-03-08 | 2019-03-08 | Cutter tray for microwave plasma diamond film deposition device |
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| CN201920295875.7U CN209941087U (en) | 2019-03-08 | 2019-03-08 | Cutter tray for microwave plasma diamond film deposition device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111441037A (en) * | 2019-03-08 | 2020-07-24 | 上海征世科技有限公司 | Cutter tray for microwave plasma diamond film deposition device |
| CN111962048A (en) * | 2020-07-16 | 2020-11-20 | 上海征世科技有限公司 | Substrate table and equipment for microwave plasma equipment |
| CN112063996A (en) * | 2020-09-18 | 2020-12-11 | 上海征世科技有限公司 | Microwave plasma reaction chamber and accommodating base thereof |
| CN111441037B (en) * | 2019-03-08 | 2024-05-14 | 上海征世科技股份有限公司 | Cutter tray used in microwave plasma deposition diamond film device |
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2019
- 2019-03-08 CN CN201920295875.7U patent/CN209941087U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111441037A (en) * | 2019-03-08 | 2020-07-24 | 上海征世科技有限公司 | Cutter tray for microwave plasma diamond film deposition device |
| CN111441037B (en) * | 2019-03-08 | 2024-05-14 | 上海征世科技股份有限公司 | Cutter tray used in microwave plasma deposition diamond film device |
| CN111962048A (en) * | 2020-07-16 | 2020-11-20 | 上海征世科技有限公司 | Substrate table and equipment for microwave plasma equipment |
| CN111962048B (en) * | 2020-07-16 | 2021-08-20 | 上海征世科技股份有限公司 | Substrate table and equipment for microwave plasma equipment |
| CN112063996A (en) * | 2020-09-18 | 2020-12-11 | 上海征世科技有限公司 | Microwave plasma reaction chamber and accommodating base thereof |
| CN112063996B (en) * | 2020-09-18 | 2021-04-20 | 上海征世科技有限公司 | Microwave plasma reaction chamber and accommodating base thereof |
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Address after: 201799 west side of Building 2, No. 500, Huapu Road, Qingpu District, Shanghai Patentee after: Shanghai Zhengshi Technology Co.,Ltd. Address before: 201799 west side of Building 2, No. 500, Huapu Road, Qingpu District, Shanghai Patentee before: SHANGHAI ZHENGSHI TECHNOLOGY Co.,Ltd. |