CN209930814U - Lithographic apparatus - Google Patents
Lithographic apparatus Download PDFInfo
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- CN209930814U CN209930814U CN201920608193.7U CN201920608193U CN209930814U CN 209930814 U CN209930814 U CN 209930814U CN 201920608193 U CN201920608193 U CN 201920608193U CN 209930814 U CN209930814 U CN 209930814U
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Abstract
The embodiment of the utility model provides a photoetching equipment, which comprises a transmission device, a gas bath device, a temperature control device and a cleanliness control device; this temperature control device and cleanliness factor controlling means among lithography apparatus, the regulation that carries out temperature and cleanliness factor to the gas bath gas of transmission in the gas pipeline of gas bath device respectively, can be with the gaseous temperature regulation of the gas bath of transmission in the gas pipeline to predetermineeing the temperature range, and adjust the gaseous cleanliness factor of the gas bath of transmission in the gas pipeline to predetermineeing the cleanliness factor within range, thereby when gas bath gas carries out the gas bath to each region of transmission device, the temperature and the cleanliness factor of waiting to photoetch sample of transmission among the accurate control transmission device, so that the in-process of waiting to photoetch sample through transmission device transmission has suitable temperature and higher cleanliness factor, and then improve lithography apparatus's photoetching quality.
Description
Technical Field
The utility model relates to a lithography technology field especially relates to a lithography apparatus.
Background
An integrated circuit is a microelectronic device or component that is patterned to specific dimensions by a photolithographic process. With the development of large-scale integrated circuits and very large-scale integrated circuits, the line width of the patterns of the integrated circuits is continuously reduced, the requirements on the photoetching quality are higher and higher, and the final photoetching quality can be influenced by the tiny fluctuation of parameters such as temperature, cleanliness, humidity and pressure of some key areas in photoetching equipment.
The transmission module of the lithography equipment is a device for realizing the transmission of the sample to be photoetched from a sample library or a tracking machine to a workpiece stage in the lithography equipment. The temperature and the cleanliness of the transmission module have certain influence on the photoetching quality of subsequent photoetching equipment, so that the temperature and the cleanliness indexes in the transmission module have important significance on the improvement of the photoetching quality. When the transmission module transmits a sample to be photoetched, heat and particles generated by the operation of components in the transmission module, and particles in the environment, such as the heating of a motor in a photoetching transmission device, the heating of a board card, the particles generated when the components move, the internal pollution of the external environment of the area, and the like, can affect the surface temperature and the cleanliness of the sample to be photoetched. In the prior art, the environmental parameters of the transmission process of the sample to be photoetched are controlled by covering a key area of a transmission module and the surface of the sample to be photoetched with a gas bath.
However, the existing method only controls the environmental parameters in the transmission process of the sample to be photoetched in a gas bath mode, and cannot accurately control the temperature, cleanliness and the like in the environment, so that the photoetching quality is influenced, and the yield of products is reduced.
SUMMERY OF THE UTILITY MODEL
An embodiment of the utility model provides a lithography apparatus can solve lithography apparatus's among the prior art lithography quality and the technical problem that the product yield is low.
An embodiment of the present invention provides a lithographic apparatus, including: the device comprises a transmission device, a gas bath device, a temperature control device and a cleanliness control device;
the transmission device at least comprises a storage part of a sample to be photoetched and a manipulator; the storage part of the sample to be photoetched is used for storing the sample to be photoetched; the manipulator is used for grabbing and transmitting the sample to be photoetched;
the gas bath device comprises a gas pipeline, the gas pipeline comprises a gas bath inlet and at least one gas bath outlet, and the gas bath inlet receives gas bath gas and then transmits the gas bath gas to the gas bath outlet of the gas pipeline;
the gas bath outlet is arranged at least one of the front side of the storage part of the sample to be photoetched, the front side of the manipulator, which faces the sample to be photoetched, and the back side of the manipulator, which faces the sample to be photoetched;
the temperature control device is arranged on the gas pipeline; the temperature control device is used for adjusting the temperature of the gas bath gas transmitted in the gas pipeline to be within a preset temperature range;
the cleanliness control device is arranged in the gas pipeline; the cleanliness control device is used for adjusting the cleanliness of the gas bath gas transmitted in the gas pipeline to be within a preset cleanliness range.
The embodiment of the utility model provides a photoetching equipment, this photoetching equipment includes the transmission device, this transmission device includes the manipulator and waits the storage part and the manipulator of photoetching sample to realize the transmission of sample in photoetching equipment; carrying out gas bath on a transmission area by arranging a gas bath device in the photoetching equipment, transmitting gas bath gas through a gas pipeline of the gas bath device, and arranging a gas bath outlet of the gas pipeline in the transmission area where the transmission device transmits a sample to be photoetched; meanwhile, the photoetching equipment is also provided with a temperature control device and a cleanliness control device, the temperature and the cleanliness of the gas bath gas transmitted in the gas pipeline are respectively regulated, the temperature of the gas bath gas transmitted in the gas pipeline can be regulated to a preset temperature range, and the cleanliness of the gas bath gas is regulated to a preset cleanliness range, so that when the gas bath gas carries out gas bath on each region of the transmission device, the accurate control on the temperature and the cleanliness of a to-be-photoetched sample transmitted in the transmission device is realized, the to-be-photoetched sample has proper temperature and higher cleanliness in the transmission process through the transmission device, and the photoetching quality of the photoetching equipment is further improved.
Drawings
FIG. 1 is a schematic diagram of a lithographic apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another lithographic apparatus according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a gas bath pressure stabilizing device provided by an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a flow rate adjusting device according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of another lithographic apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of another lithographic apparatus according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a further lithographic apparatus according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of yet another lithographic apparatus according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
An embodiment of the utility model provides a lithography apparatus, this lithography apparatus can carry out the photoetching process step in semiconductor device's processing procedure. The photoetching equipment of the embodiment comprises a transmission device, a gas bath device, a temperature control device and a cleanliness control device; the transmission device at least comprises a storage part of a sample to be photoetched and a manipulator; the storage part of the sample to be photoetched is used for storing the sample to be photoetched; the manipulator is used for grabbing and transmitting a sample to be photoetched; the gas bath device comprises a gas pipeline, the gas pipeline comprises a gas bath inlet and at least one gas bath outlet, and the gas bath inlet receives gas bath gas and then transmits the gas bath gas to the gas bath outlet of the gas pipeline; the gas bath outlet is arranged at least one of the front side of the storage part of the sample to be photoetched, the front side of the manipulator, which faces the sample to be photoetched, and the back side of the manipulator, which faces the sample to be photoetched; the temperature control device is arranged on the gas pipeline; the temperature control device is used for adjusting the temperature of the gas bath gas transmitted in the gas pipeline to be within a preset temperature range; the cleanliness control device is arranged in the gas pipeline; the cleanliness control device is used for adjusting the cleanliness of the gas bath gas transmitted in the gas pipeline to be within a preset cleanliness range.
The photolithography equipment is a key equipment in the semiconductor device manufacturing process, however, any small fluctuation of parameters such as temperature, cleanliness, humidity and pressure can affect the photolithography precision of the photolithography equipment, thereby affecting the performance of the semiconductor device. Generally, after a lithographic sample reaches the lithographic apparatus from the outside, the lithographic sample is transported by a transport device of the lithographic apparatus, and finally reaches a workpiece stage of the lithographic apparatus, and the lithography is completed on the workpiece stage. In the process of transmitting the sample to be photoetched in the photoetching equipment, the temperature and the cleanliness of the surface of the sample to be photoetched can directly influence the photoetching precision of the photoetching equipment, so that the temperature and the cleanliness of a transmission area of the sample to be photoetched in the transmission process are regulated. The sample to be photoetched may be a silicon wafer or a process wafer of other semiconductor devices.
In the embodiment, the gas bath gas is transmitted through the gas pipeline of the gas bath device, and the gas bath outlet of the gas pipeline in the gas bath device is arranged at least one position of the front side of the storage part of the sample to be photoetched, which faces the sample to be photoetched, of the transmission device, the front side of the manipulator faces the sample to be photoetched and the back side of the manipulator faces the sample to be photoetched, so that the gas bath device performs gas bath on a transmission area, which transmits the sample to be photoetched, of the transmission device. Meanwhile, a temperature control device is arranged on a gas pipeline of the gas bath device to adjust the temperature of the gas bath gas transmitted in the gas pipeline, so that the temperature of the gas bath gas blown out from a gas bath outlet of the gas pipeline can be in a preset temperature range; and a cleanliness control device is arranged in a gas pipeline of the gas bath device to adjust the cleanliness of the gas bath gas transmitted in the gas pipeline, so that the cleanliness of the gas bath gas blown out from a gas bath outlet of the gas pipeline can be within a preset cleanliness range.
Because at least one of the storage part of the to-be-photoetched sample of the transmission device, which faces the front side of the to-be-photoetched sample, the front side of the manipulator, which faces the to-be-photoetched sample, and the back side of the manipulator, which faces the to-be-photoetched sample, is provided with the gas bath outlet of the gas pipeline, when the to-be-photoetched sample is transmitted in the transmission device, the gas bath gas blown out from the gas bath outlet of the gas pipeline can be subjected to gas bath on the front side and/or the back side of the to-be-photoetched sample so as to adjust the temperature and the cleanliness of the front side and/or the back side of the to-be-photoetched sample, so that the surface of the to-be-photoetched sample can have a.
It should be noted that, in this embodiment, at least one of the storage portion of the sample to be subjected to lithography of the transportation device, the front side of the sample to be subjected to lithography, the manipulator, and the back side of the sample to be subjected to lithography is provided with a gas bath outlet, that is, gas bath gas blown from the gas bath outlet performs gas bath on at least one of the front side of the storage portion of the sample to be subjected to lithography, the front side of the manipulator, and the back side of the sample to be subjected to lithography of the transportation device, where "at least one" may be an entire transportation area where the transportation device transports the sample to be subjected to lithography, or "at least one" may be any one or several of the transportation areas where the transportation device transports the sample to be subjected to lithography. Accordingly, the gas bath outlet of the gas line may be one or more so that the gas bath gas blown out of the gas bath outlet of the gas line can be used to gas-bath the transfer area where the transfer device transfers the sample to be lithographed. Furthermore, the front side of the sample to be lithographed may be the surface of the etched pattern of the sample to be lithographed, i.e., the light facet; the back side of the sample to be lithographed may be a non-light facet of the sample to be lithographed.
FIG. 1 is a schematic diagram of a lithographic apparatus according to an embodiment of the present invention. Referring to FIG. 1, the lithographic apparatus of this embodiment includes a transfer device 10, a gas bath device 20, a temperature control device 30, and a cleanliness control device 40; the transfer device 10 comprises at least a storage part 12 of the sample to be lithographed and a manipulator 11; wherein the storage part 12 of the sample to be photoetched is used for storing the sample to be photoetched (not shown in the figure); the robot 11 is used for gripping and transporting a sample to be photoetched (not shown in the figure); the gas bath device 20 comprises a gas pipeline 210, wherein the gas pipeline 210 comprises a gas bath inlet 201 and at least one gas bath outlet 202, and the gas bath inlet 201 receives gas bath gas and transmits the gas bath gas to the gas bath outlet 202 of the gas pipeline 210; a gas bath outlet 202 is arranged at least one of the front side of the storage part 12 of the sample to be photoetched, which faces the sample to be photoetched, the front side of the manipulator 11, which faces the sample to be photoetched, and the back side of the manipulator 11, which faces the sample to be photoetched; the temperature control device 30 is arranged on the gas pipeline 210; the temperature control device 30 is used for adjusting the temperature of the gas bath gas transmitted in the gas pipeline 210 to be within a preset temperature range; the cleanliness control device 40 is disposed in the gas line 210; the cleanliness control device 40 is used to adjust the cleanliness of the gas bath gas transported in the gas line 210 to be within a preset cleanliness range.
In particular, the storage portion 12 of the sample to be lithographed of the transport device 10 of the lithographic apparatus is used to store the sample to be lithographed, which storage portion 12 of the sample to be lithographed is a temporary storage place for the sample to be lithographed in the lithographic apparatus. The robot 11 of the transfer device 10 can grasp a sample to be lithographed to transfer the sample to be lithographed from one part of the lithographic apparatus to another, for example, the robot 11 can grasp a sample to be lithographed in the storage 12 of the sample to be lithographed and transfer the sample to be lithographed to the workpiece stage of the lithographic apparatus. The gas bath device 20 of the lithographic apparatus is capable of providing a gas bath gas for gas bathing the lithographic apparatus. The gas bath device 20 comprises a gas pipeline 210, one end of the gas pipeline 210 is a gas bath inlet 201, the other end of the gas pipeline 210 is a gas bath outlet 202, and gas bath gas enters the gas pipeline 210 from the gas bath inlet 201 and is transmitted to the gas bath outlet 202 through the gas bath pipeline 210. Wherein, the gas bath outlet 202 can be arranged at least one of the front side of the storage part 12 of the sample to be photoetched facing the sample to be photoetched in the transmission device 10, the front side of the manipulator 11 facing the sample to be photoetched and the back side of the manipulator 11 facing the sample to be photoetched, when the sample to be photoetched is transmitted to the position where the gas bath outlet 202 is arranged, the gas bath gas blown out from the gas bath outlet 202 can carry out gas bath on the front side and/or the back side of the sample to be photoetched, so that pollution particles outside the gas bath coverage range can be prevented from polluting the front side and/or the back side of the sample to be photoetched.
In order to further accurately adjust the temperature and cleanliness within the gas coverage of the gas bath, a temperature control device 30 and a cleanliness control device 40 are also provided in the lithographic apparatus. Wherein, the temperature control device 30 is disposed on the gas pipeline 210 of the gas bath device 20, the temperature control device 30 can adjust the temperature of the gas bath gas transmitted in the gas pipeline 210, so that the temperature of the gas bath gas in the gas pipeline 210 is within a preset temperature range, thereby the gas bath gas with a specific temperature blown out from the gas bath outlet 202 of the gas pipeline 210 can be used for adjusting the temperature of the front surface and/or the back surface of the sample to be photoetched. The cleanliness control device 40 is disposed in the gas pipeline 210 of the gas bath device 20, and the cleanliness control device 40 can adjust the cleanliness of the gas bath gas transported in the gas pipeline 210, so that the cleanliness of the gas bath gas in the gas pipeline 210 is within a preset cleanliness range, and therefore the gas bath gas blown out from the gas bath outlet 202 of the gas pipeline 210 can have higher cleanliness, so as to adjust the cleanliness of the environmental region on the front and/or back side of the sample to be subjected to photolithography, and make the front and/or back of the sample to be subjected to photolithography have higher cleanliness.
The temperature control device 30 may adjust the temperature of the gas bath gas transported in the gas line 210, for example, by blowing adjustment and/or liquid adjustment. For example, when the temperature control device 30 is used to cool the gas bath gas transported in the gas pipeline 210, the temperature control device 30 may cool the gas bath gas transported in the gas pipeline 210 by air cooling and/or liquid cooling. The cleanliness control device 40 may be, for example, a filter having a filtration efficiency of U16, i.e., a probability of 99.99995% that particles having a size of greater than 0.1 μm are prevented from passing through, so that the gas bath gas has a cleanliness CLASS of ISO CLASS 1. Wherein, the filter core of this filter can be for example the filter core of the high efficiency filter who adopts the glass fiber material.
It should be noted that fig. 1 is an exemplary drawing of the present embodiment, and fig. 1 only shows one gas bath outlet 202 of the gas bath device 20, and the gas bath gas blown out from the gas bath outlet 202 can cover at least one of the front side of the storage part 12 of the sample to be photoetched in the transmission device 10 facing the sample to be photoetched, the front side of the robot 11 facing the sample to be photoetched, and the back side of the robot 11 facing the sample to be photoetched. In other exemplary drawings of the embodiments of the present invention, the gas bath outlet of the gas bath apparatus may be multiple, for example, three or four, so as to cover all or part of the region where the transmission apparatus transmits the sample to be lithographed by the gas bath gas blown from the gas bath outlet of the gas bath apparatus.
Alternatively, fig. 2 is a schematic structural diagram of another lithographic apparatus according to an embodiment of the present invention. As shown in fig. 2, a gas bath pressure stabilizing device 50 is also provided in the lithographic apparatus. The gas inlet end of the gas bath pressure stabilizing device 50 is connected with the gas bath outlet 202, and the area of the gas outlet end of the gas bath pressure stabilizing device 50 is larger than that of the gas bath outlet 202; the gas bath gas at the gas outlet end of the gas bath pressure stabilizing device 50 at least covers the placing area of the sample to be photoetched.
Specifically, when the cross-sectional area of the gas line 210 for transporting the gas bath gas in the gas bath device 20 is insufficient to cover the gas bath area of the transporting device 10, the gas bath pressure stabilizing device 50 may be provided at the position of the gas bath outlet 202 of the gas line 210. The gas bath pressure stabilizing device 50 receives the gas bath gas transmitted from the gas bath outlet 202, and after the received gas bath gas is refluxed, the gas bath gas is blown out through the gas outlet end of the gas bath pressure stabilizing device 50. Since the area of the gas outlet end of the gas bath pressure stabilizing device 50 is larger than the area of the gas bath outlet 202, the gas bath pressure stabilizing device 50 can enlarge the coverage area of the gas bath gas at the gas bath outlet 202, so that the gas bath gas at the gas outlet end of the gas bath pressure stabilizing device 50 at least covers the placing area of the sample to be photoetched. The placing area of the sample to be photoetched may include at least one of the front side of the storage part 12 of the sample to be photoetched facing the sample to be photoetched in the transmission device 10, the front side of the robot 11 facing the sample to be photoetched, and the back side of the robot 11 facing the sample to be photoetched. Alternatively, the gas bath pressure stabilizing device 50 may include at least one of a mesh-shaped screen plate and a filter cloth.
Exemplarily, fig. 3 is a schematic structural diagram of a gas bath pressure stabilizing device provided by an embodiment of the present invention. Referring to fig. 2 and 3, the gas bath pressure stabilizing apparatus 50 includes a perforated screen 51, the perforated screen 51 has a plurality of small holes, and the gas bath gas transmitted to the gas bath pressure stabilizing apparatus 50 through the gas bath outlet 202 of the gas pipeline 210 is refluxed in the gas bath pressure stabilizing apparatus 50 and then blown out through the small holes of the perforated screen 51 to gas bath the corresponding region.
Optionally, with continued reference to fig. 2, a flow regulator 60 is also provided in the lithographic apparatus. The flow regulating device 60 is disposed in the gas line 210. The flow rate adjusting device 60 is used to adjust the flow rate of the gas bath gas flowing through the gas line 210 to be within a preset flow rate range.
Specifically, since the gas flow rate of the gas bath gas entering the gas pipeline 210 from the gas bath inlet 201 may be larger than the gas bath gas flow rate required by the gas bath outlet 202, or when a plurality of gas bath outlets 202 are included, the gas bath gas flow rate required by each gas bath outlet may be the same or different, the gas bath gas transmitted in the gas pipeline 210 may be adjusted by the flow rate adjustment device 60 so that the gas bath gas flow rate transmitted to the gas bath outlet 202 in the gas pipeline 210 can be within a preset flow rate range.
Optionally, fig. 4 is a schematic structural diagram of a flow rate adjusting device according to an embodiment of the present invention. Referring to fig. 2 and 4, the flow regulating device 60 includes a flow regulating plate 61 and a regulating knob 62. The flow adjusting plate 61 is fixedly connected with the adjusting knob 62, the flow adjusting plate 61 is arranged in the gas pipeline 210, and the adjusting knob 62 is arranged on the outer wall of the gas pipeline 210; the adjusting knob 62 rotates to drive the flow adjusting plate 61 to rotate so as to adjust the flow of the gas bath gas flowing through the gas pipeline 210 to be within a preset flow range. The flow regulating plate 61 can regulate the cross-sectional area of the gas bath gas transmitted in the gas pipeline 210, thereby achieving the purpose of flow regulation.
Optionally, with reference to fig. 4, a pressure testing end 203 is further disposed on the gas pipeline 210, and an external pressure testing device tests the pressure of the gas bath gas flowing through the gas pipeline 210 through the pressure testing end 203, so as to obtain the pressure of the gas bath gas transmitted in the gas pipeline 210, so as to achieve the purpose of detecting the pressure of the gas bath gas transmitted in the gas pipeline 210.
Alternatively, fig. 5 is a schematic structural diagram of another lithographic apparatus according to an embodiment of the present invention. Referring to fig. 5, when the temperature control device 40 of the lithographic apparatus adjusts the temperature of the gas bath gas conveyed in the gas pipeline 210 by the liquid, the temperature control device 30 may be a heat exchanger, and the lithographic apparatus further includes a liquid inlet pipeline 301 and a liquid outlet pipeline 302 connected to the heat exchanger 30, i.e. the liquid outlet of the liquid inlet pipeline 301 is connected to one end of the heat exchanger 30, and the other end of the heat exchanger 30 is connected to the liquid inlet of the liquid outlet pipeline 302, so that the liquid is conveyed to the heat exchanger 30 through the liquid inlet pipeline 301, and flows out through the liquid outlet pipeline 302 after exchanging heat with the gas bath gas in the gas pipeline 210 through the heat exchanger 30. The liquid for heat exchange in the heat exchanger may be, for example, cooling water, and the temperature of the cooling water may be, for example, 22 ℃, in which case the heat exchanger 30 may lower the temperature of the gas bath gas transported in the gas pipeline 210, so as to control the temperature of the gas bath gas in the gas pipeline within the range of [21.95, 22.05 ].
Alternatively, fig. 6 is a schematic structural diagram of another lithographic apparatus according to an embodiment of the present invention. As shown in fig. 6, the storage portion of the transfer device 10 for the sample to be subjected to photolithography includes a temporary storage chamber 121 and a temperature adjustment stage 122. Wherein the temporary storage chamber 121 is used for carrying the sample to be lithographed 70 which is externally transmitted to the lithography equipment; the temperature adjustment stage 122 is used to carry the sample to be lithographed 70 transferred by the robot 11 from the temporary storage chamber 121.
Specifically, the sample to be subjected to photolithography 70 transferred from the external apparatus to the photolithography apparatus is stored in the storage portion of the sample to be subjected to photolithography. The temporary storage chamber 121 of the storage portion of the sample to be lithographed can temporarily store the sample to be lithographed 70, and the temporary storage chamber 121 can perform pre-lithography pretreatment, such as cooling and/or cleaning, on the stored sample to be lithographed 70. The preprocessed sample 70 to be photoetched is captured by the robot 11 and transferred to the temperature adjusting stage 122, and the temperature adjusting stage 122 can adjust the temperature of the sample 70 to be photoetched, so that the temperature of the sample 70 to be photoetched can reach a preset temperature range during photoetching, and the preset temperature value range is [21.95, 22.05], for example. After the temperature of the sample 70 to be lithographed is adjusted by the temperature adjusting stage 122, the robot 11 can pick the sample 70 to be lithographed onto a stage (not shown) of the lithography apparatus for lithography.
Alternatively, with continued reference to fig. 6, the gas bath apparatus may comprise four gas bath outlets, i.e. the gas bath outlets of the gas bath apparatus comprise a first gas bath outlet 221, a second gas bath outlet 222, a third gas bath outlet 223 and a fourth gas bath outlet 224, while the branches of the gas lines of the gas bath apparatus correspond to the number of gas bath outlets, i.e. the gas lines comprise a first branch gas line 211, a second branch gas line 212, a third branch gas line 213 and a fourth branch gas line 214.
Wherein the first end of the first branch gas line 211, the first end of the second branch gas line 212, the first end of the third branch gas line 213, and the first end of the fourth branch gas line are all gas bath inlets 201; the second end of the first branch gas line 211 is a first gas bath outlet 221, and the first gas bath outlet 221 is disposed in the temporary storage chamber 121; the second end of the second branch gas pipe 212 is a second gas bath outlet 222, and the second gas bath outlet 222 is disposed on the side of the robot 11 facing the back surface 72 of the sample 70 to be photoetched; the second end of the third branch gas pipe 213 is a third gas bath outlet 223, and the third gas bath outlet 223 is disposed on the side of the front face 71 of the robot 11 facing the sample to be photoetched 70; the second end of the fourth branch gas pipe 214 is a fourth gas bath outlet 224, and the fourth gas bath outlet 224 is disposed on the side 1221 of the temperature adjustment stage 122 of the sample to be etched 70, on which the sample to be etched is placed.
Specifically, the transfer device 10 of the lithographic apparatus includes a robot 11, a temporary storage chamber 121, and a temperature adjustment stage 122. Wherein, the sample to be photoetched entering the lithography apparatus is stored in the temporary storage chamber 121, and the gas bath gas transmitted to the first gas bath outlet 221 through the first branch gas pipeline 221 performs gas bath on the temporary storage chamber 121, so that the temperature, cleanliness, humidity, pressure and other parameters placed in the temporary storage chamber 121 reach preset values, and thus the temperature, cleanliness and other parameters of the sample to be photoetched placed in the temporary storage chamber 121 reach preset values. For example, the temperature in the temporary storage chamber 121 may be in the range [21.9, 22.1], and the temperature of the sample to be lithographed in the temporary storage chamber 121 may be in the corresponding range. Meanwhile, the sample to be lithographed is transferred from one part of the lithography apparatus to another part by the robot 11, for example, from the temporary storage chamber 121 to the thermal conditioning stage 122, from the thermal conditioning stage 122 to the workpiece stage, and so on. In order to maintain the corresponding temperature and cleanliness of the sample to be photoetched during the grabbing and transferring process, the gas bath gas transferred from the second branch gas pipeline 212 to the second gas bath outlet 222 and from the third branch gas pipeline 213 to the third gas bath outlet 223 is used for respectively gas-bathing the areas of the robot arm 11 facing the front surface 71 side of the sample to be photoetched 70 and the area of the robot arm 11 facing the back surface 72 side of the sample to be photoetched 70 during the grabbing and transferring process of the sample to be photoetched 70 by the robot arm 11, by arranging the second gas bath outlet 222 on the back surface 72 side of the sample to be photoetched 70 of the robot arm 11 and arranging the third gas bath outlet 223 on the front surface 71 side of the sample to be photoetched 11. For example, the temperature values of the areas of the front 71 side of the robot 11 facing the sample 70 to be photoetched and the back 72 side of the robot 11 facing the sample 70 to be photoetched may range from [21.95, 22.05 ]. In addition, the sample to be subjected to lithography, which is transferred from the temporary storage chamber to the temperature adjustment stage 122 by the robot 11, is subjected to further temperature adjustment at the temperature adjustment stage 122. In order to maintain the temperature of the sample to be subjected to photolithography at a corresponding temperature during the temperature adjustment of the temperature adjustment stage 122 without affecting the temperature adjusted by the temperature adjustment stage 122, the fourth gas bath outlet 224 is disposed on the side 1221 of the sample to be subjected to photolithography of the temperature adjustment stage 122 of the sample to be subjected to photolithography 70, so that the gas bath gas transmitted from the fourth branch gas pipe 214 to the fourth gas bath outlet 224 performs gas bath on the side 1221 of the sample to be subjected to photolithography of the temperature adjustment stage 122. The temperature adjusting stage 122 may adjust the temperature of the sample to be photoetched by using air cooling and/or water cooling heat exchange. When the temperature adjusting stage 122 is used for performing heat exchange on the sample to be photoetched in a water-cooling heat exchange mode, the liquid pipeline of the temperature adjusting stage 122 can be shared with the liquid pipeline of the heat exchanger.
Alternatively, fig. 7 is a schematic structural diagram of another lithographic apparatus provided in an embodiment of the present invention. As shown in FIG. 7, the temperature control device of the lithographic apparatus comprises a heat exchanger. The heat exchanger is arranged on at least one of the first branch gas pipeline 211, the second branch gas pipeline 212, the third branch gas pipeline 213 and the fourth branch gas pipeline 214, so that the temperature of the gas bath gas transmitted in at least one of the first branch gas pipeline 211, the second branch gas pipeline 212, the third branch gas pipeline 213 and the fourth branch gas pipeline 214 is adjusted by the heat exchanger, and when a sample to be photoetched is transmitted by the transmission device 10, the temperature of at least one transmission position is controlled within a preset precision range, thereby improving the photoetching precision of the photoetching equipment.
Alternatively, with continued reference to fig. 7, in the first gas bath outlet 221, the second gas bath outlet 222, the third gas bath outlet 223 and the fourth gas bath outlet 224, if the distance between the two gas bath outlets is smaller than the preset distance, the two branch gas pipes corresponding to the two gas bath outlets share one heat exchanger.
For example, as shown in fig. 7, the temperature adjustment device of the lithographic apparatus may comprise a first heat exchanger 31 and a second heat exchanger 32, and the first heat exchanger 31 and the second heat exchanger 32 may respectively adjust the temperature of the gas bath gas conveyed in the corresponding branch gas line. For example, when the distance between the third gas bath outlet 223 disposed on the side of the robot 11 facing the front face 71 of the sample to be lithographed 70 and the fourth gas bath outlet 224 disposed on the side 1221 of the temperature adjustment stage 122 on which the sample to be lithographed is placed is within a predetermined distance, the third branch gas line 213 and the fourth branch gas line 214 may share one second heat exchanger 32, and the second heat exchanger 32 may adjust the temperature of the gas bath gas transmitted from the third branch gas line 213 to the third gas bath outlet 223 and the temperature of the gas bath gas transmitted from the fourth branch gas line 214 to the fourth gas bath outlet 224 to be within a predetermined temperature range. Accordingly, the first heat exchanger 31 may be provided on the second branch gas line 212 to adjust the temperature of the gas bath gas delivered by the fourth branch gas line 214.
Alternatively, with continued reference to fig. 6 or 7, where the gas lines of the gas bath arrangement comprise four branch gas lines, the flow regulating device of the lithographic apparatus may comprise four flow regulating devices, respectively. I.e. when the lithographic apparatus comprises a flow regulating device, the flow regulating device comprises a first flow regulating device 601, a second flow regulating device 602, a third flow regulating device 603 and a fourth flow regulating device 604.
A first flow rate adjusting device 601 is disposed on the first branch gas line 121, the first flow rate adjusting device 601 is used for adjusting the flow rate of the gas bath gas flowing through the first branch gas line 121; a second flow regulating device 602 is disposed on the second branch gas line 122, the second flow regulating device 602 being configured to regulate the flow of the gas bath gas flowing through the second branch gas line 122; a third flow rate adjusting device 603 is provided on the third branch gas line 123, the third flow rate adjusting device 603 being configured to adjust a flow rate of the gas bath gas flowing through the third branch gas line 123; a fourth flow regulating device 604 is disposed on the fourth branch gas line 124, and the fourth flow regulating device 604 is used for regulating the flow of the gas bath gas flowing through the fourth branch gas line 604.
Specifically, the flow rate of the gas bath gas transmitted through the first branch gas pipeline 121 is adjusted by the first flow rate adjusting device 601, so that the flow rate of the gas bath gas transmitted through the first gas bath outlet 221 corresponding to the first branch gas pipeline 121 is within a preset range; the flow rate of the gas bath gas transmitted through the second branch gas pipe 122 is adjusted by the second flow rate adjustment device 602, so that the flow rate of the gas bath gas transmitted through the second gas bath outlet 222 corresponding to the second branch gas pipe 122 is within a preset range; the flow rate of the gas bath gas transmitted by the third branch gas pipeline 123 is adjusted by the third flow rate adjusting device 603, so that the flow rate of the gas bath gas transmitted by the third gas bath outlet 223 corresponding to the third branch gas pipeline 123 is within a preset range; the flow rate of the gas bath gas delivered through the fourth branch gas line 124 is adjusted by the fourth flow rate adjustment device 604 so that the flow rate of the gas bath gas delivered through the fourth gas bath outlet 224 corresponding to the fourth branch gas line 124 is within a preset range.
For example, the gas bath gas entering from the gas bath inlet 201 needs to be respectively transmitted to the corresponding gas bath outlets through the corresponding branch gas pipes, and the flow rate of the gas bath gas can be divided according to the corresponding region of each gas bath outlet. For example, when the flow rate of the gas bath gas entering the gas bath inlet 201 is 280m3In the case of/h, the temporary storage chamber 121 is used for temporarily storing the sample to be subjected to photolithography, so that a large flow rate of the gas bath gas is not required, and a large flow rate of the gas bath gas is not required for the back surface 72 of the sample to be subjected to photolithography 70. The flow rate of the gas bath gas transported in the first branch gas line 211 can be adjusted to 10m by the first flow rate adjustment device 6013The gas bath requirement of the temporary storage cavity 121 can be met; accordingly, the flow rate of the gas bath gas transported in the second branch gas line 212 can be adjusted to 22m by the second flow rate adjustment device 6023And h, the requirement of the gas bath of the side of the temporary manipulator 11 facing the back 72 of the sample 70 to be photoetched can be met. The temperature adjustment stage 122 further adjusts the temperature of the sample to be subjected to photolithography, and therefore requires a large flow rate of the gas bath gas, and the front surface of the sample to be subjected to photolithography is a surface on which a photolithography pattern is formed, and therefore also requires a large flow rate of the gas bath gas. The flow rate of the gas bath gas transported in the third branch gas line 213 can be adjusted to 122m by the third flow rate adjustment device 6033H is to satisfyThe gas bath requirement of the manipulator 11 facing the front 71 side of the sample 70 to be photoetched; correspondingly, the flow of the gas bath gas conveyed in the fourth branch gas line 214 can be adjusted to 126m by means of the fourth flow adjustment device 6043The gas bath requirement of the side 1222 of the temperature adjusting table 122 where the sample to be photoetched is placed can be met.
Alternatively, with continued reference to fig. 6 or 7, when the gas line of the gas bath apparatus comprises four branch gas lines, the cleanliness regulating apparatus of the lithographic apparatus may correspondingly comprise four filters, i.e. the cleanliness control apparatus comprises a first filter 41, a second filter 42, a third filter 43 and a fourth filter 44.
Wherein 41 the first filter is disposed on the first branch gas pipe 121; the first filter 41 is for controlling the cleanliness of the gas bath gas flowing through the first branch gas line 211 within a preset cleanliness range; the second filter 42 is disposed on the second branch gas line 212; the second filter 42 is for controlling the cleanliness of the gas bath gas flowing through the second branch gas line 212 within a preset cleanliness range; the third filter 43 is disposed on the third branch gas line 213; the third filter 43 is used for controlling the cleanliness of the gas bath gas flowing through the third branch gas line 213 within a preset cleanliness range; the fourth filter 44 is disposed on the fourth branch gas line 214; the fourth filter 44 is used to control the cleanliness of the gas bath gas flowing through the fourth branch gas line 214 within a preset cleanliness range.
Specifically, the cleanliness of the gas bath gas delivered from the first branch gas line 121 is adjusted by the first filter 41, so that the cleanliness of the gas bath gas delivered from the first gas bath outlet 221 corresponding to the first branch gas line 121 is within a preset cleanliness range; adjusting the cleanliness of the gas bath gas delivered through the second branch gas line 122 by the second filter 42 so that the cleanliness of the gas bath gas delivered through the second gas bath outlet 222 corresponding to the second branch gas line 122 is within a preset cleanliness range; the cleanliness of the gas bath gas delivered by the third branch gas pipeline 123 is adjusted by the third filter 43, so that the cleanliness of the gas bath gas delivered by the third gas bath outlet 223 corresponding to the third branch gas pipeline 123 is within a preset cleanliness range; the cleanliness of the gas bath gas delivered through the fourth branch gas line 124 is adjusted by the fourth filter 44 so that the cleanliness of the gas bath gas delivered through the fourth gas bath outlet 224 corresponding to the fourth branch gas line 124 is within a preset cleanliness range.
Alternatively, fig. 8 is a schematic structural diagram of still another lithographic apparatus according to an embodiment of the present invention. As shown in fig. 8, when the lithographic apparatus has gas lines (211, 212, 213, and 214), liquid inlet line 301, and liquid outlet line 302, the lithographic apparatus further comprises a temperature sensor 81, a safety seal sensor 82, and a liquid leakage detection sensor 83. Wherein, the safety seal sensor 82 is arranged at one side of the gas pipeline close to the gas bath inlet 201; the safety seal sensor 82 is used for detecting the tightness of the gas pipeline; the temperature sensor 81 is arranged on the gas pipeline and used for detecting the temperature of the gas bath flowing through the gas pipeline; the leakage detecting sensor 83 is disposed on one side of the liquid inlet pipe 301 close to the liquid inlet, and is configured to detect leakage of the coolant in the liquid inlet pipe 301. With this arrangement, the temperature of the gas bath gas transported through the gas line and the sealing performance of the gas line can be detected, and whether or not the liquid in the liquid inlet line 301 leaks can be detected.
The utility model discloses a be provided with temperature control device and cleanliness factor controlling means among the lithography apparatus, can be respectively to the gaseous regulation that carries out temperature and cleanliness factor of the gas bath of transmission in the gas pipeline, gaseous temperature regulation to predetermineeing the temperature range with the gas bath of transmission in the gas pipeline, and adjust the cleanliness factor of gas bath to predetermineeing the cleanliness factor within range, thereby realize the accurate control of temperature and cleanliness factor among the transmission device to gas bath, so that treat that the in-process of photoetching sample through the transmission of transmission device has suitable temperature and higher cleanliness factor, and then improve the photoetching quality of lithography apparatus.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (15)
1. A lithographic apparatus, comprising: the device comprises a transmission device, a gas bath device, a temperature control device and a cleanliness control device;
the transmission device at least comprises a storage part of a sample to be photoetched and a manipulator; the storage part of the sample to be photoetched is used for storing the sample to be photoetched; the manipulator is used for grabbing and transmitting the sample to be photoetched;
the gas bath device comprises a gas pipeline, the gas pipeline comprises a gas bath inlet and at least one gas bath outlet, and the gas bath inlet receives gas bath gas and then transmits the gas bath gas to the gas bath outlet of the gas pipeline;
the gas bath outlet is arranged at least one of the front side of the storage part of the sample to be photoetched, the front side of the manipulator, which faces the sample to be photoetched, and the back side of the manipulator, which faces the sample to be photoetched;
the temperature control device is arranged on the gas pipeline; the temperature control device is used for adjusting the temperature of the gas bath gas transmitted in the gas pipeline to be within a preset temperature range;
the cleanliness control device is arranged in the gas pipeline; the cleanliness control device is used for adjusting the cleanliness of the gas bath gas transmitted in the gas pipeline to be within a preset cleanliness range.
2. The apparatus of claim 1, further comprising: a gas bath pressure stabilizing device;
the gas inlet end of the gas bath pressure stabilizing device is connected with the gas bath outlet, and the area of the gas outlet end of the gas bath pressure stabilizing device is larger than that of the gas bath outlet; and the gas bath gas at the gas outlet end of the gas bath pressure stabilizing device at least covers the placing area of the sample to be photoetched.
3. The apparatus of claim 2, wherein the gas bath pressure stabilization device comprises at least one of a perforated mesh sheet and a filter cloth.
4. The apparatus of claim 1, further comprising: a flow regulating device;
the flow regulating device is arranged in the gas pipeline; the flow regulating device is used for regulating the flow of the gas bath gas flowing through the gas pipeline to be within a preset flow range.
5. The apparatus of claim 4, wherein the flow regulating device comprises a flow regulating plate and a regulating knob;
the flow adjusting plate is fixedly connected with the adjusting knob, the flow adjusting plate is arranged in the gas pipeline, and the adjusting knob is arranged on the outer wall of the gas pipeline; the adjusting knob rotates to drive the flow adjusting plate to rotate so as to adjust the flow of the gas bath gas flowing through the gas pipeline to a preset flow range.
6. The apparatus of claim 1, wherein the temperature control device comprises a heat exchanger; the photoetching equipment further comprises a liquid inlet pipeline and a liquid outlet pipeline;
the liquid outlet of the liquid inlet pipeline is connected with one end of the heat exchanger; the other end of the heat exchanger is connected with a liquid inlet of the liquid outlet pipeline.
7. The apparatus of claim 1, wherein the cleanliness control device comprises a filter.
8. The apparatus according to any one of claims 1 to 7, wherein a pressure test end is provided on the gas pipeline; an external pressure test device tests the pressure of the gas bath flowing through the gas line via the pressure test end.
9. The apparatus according to any of claims 1 to 7, wherein the storage part of the sample to be lithographed comprises a temporary storage chamber and a temperature adjustment stage;
the temporary storage cavity is used for bearing the sample to be photoetched, which is transmitted to the photoetching equipment from the outside;
the temperature adjusting table is used for carrying the sample to be photoetched, which is transferred from the temporary storage cavity by the mechanical arm.
10. The apparatus of claim 9, wherein the plurality of gas bath outlets comprises a first gas bath outlet, a second gas bath outlet, a third gas bath outlet, and a fourth gas bath outlet;
the gas pipelines comprise a first branch gas pipeline, a second branch gas pipeline, a third branch gas pipeline and a fourth branch gas pipeline;
the first end of the first branch gas line, the first end of the second branch gas line, the first end of the third branch gas line, and the first end of the fourth branch gas line are the gas bath inlets;
the second end of the first branch gas pipeline is the first gas bath outlet which is arranged in the temporary storage cavity;
the second end of the second branch gas pipeline is the second gas bath outlet which is arranged on one side of the back surface of the manipulator facing the sample to be photoetched;
the second end of the third branch gas pipeline is the third gas bath outlet, and the third gas bath outlet is arranged on one side of the front surface of the manipulator facing the sample to be photoetched;
and the second end of the fourth branch gas pipeline is the fourth gas bath outlet, and the fourth gas bath outlet is arranged at one side of the temperature adjusting table where a sample to be photoetched is placed.
11. The apparatus of claim 10, wherein the temperature control device comprises a heat exchanger; the heat exchanger is arranged on at least one of the first branch gas pipeline, the second branch gas pipeline, the third branch gas pipeline and the fourth branch gas pipeline.
12. The apparatus of claim 11, wherein the two branched gas pipes of the first, second, third and fourth gas bath outlets share one heat exchanger if a distance between the two gas bath outlets is smaller than a predetermined distance.
13. The apparatus according to claim 11, wherein when the lithographic apparatus comprises a flow regulation device, the flow regulation device comprises a first flow regulation device, a second flow regulation device, a third flow regulation device, and a fourth flow regulation device;
the first flow regulating device is arranged on the first branch gas pipeline and is used for regulating the flow of the gas bath gas flowing through the first branch gas pipeline;
the second flow regulating device is arranged on the second branch gas pipeline and is used for regulating the flow of the gas bath gas flowing through the second branch gas pipeline;
the third flow regulating device is arranged on the third branch gas pipeline and is used for regulating the flow of the gas bath gas flowing through the third branch gas pipeline;
the fourth flow regulating device is arranged on the fourth branch gas pipeline and is used for regulating the flow of the gas bath gas flowing through the fourth branch gas pipeline.
14. The apparatus of claim 13, wherein the cleanliness control device comprises a first filter, a second filter, a third filter, and a fourth filter;
the first filter is disposed on the first branch gas pipeline; the first filter is used for controlling the cleanliness of the gas bath gas flowing through the first branch gas pipeline within a preset cleanliness range;
the second filter is arranged on the second branch gas pipeline; the second filter is used for controlling the cleanliness of the gas bath gas flowing through the second branch gas pipeline within a preset cleanliness range;
the third filter is arranged on the third branch gas pipeline; the third filter is used for controlling the cleanliness of the gas bath gas flowing through the third branch gas pipeline within a preset cleanliness range;
the fourth filter is arranged on the fourth branch gas pipeline; and the fourth filter is used for controlling the cleanliness of the gas bath gas flowing through the fourth branch gas pipeline within a preset cleanliness range.
15. The apparatus of claim 6, further comprising: a temperature sensor, a safety seal sensor and a leakage detection sensor;
the safety seal sensor is arranged on one side of the gas pipeline close to the gas bath inlet; the safety seal sensor is used for detecting the tightness of the gas pipeline;
the temperature sensor is arranged on the gas pipeline and used for detecting the temperature of the gas bath gas flowing through the gas pipeline;
the liquid leakage detection sensor is arranged on one side, close to the liquid inlet, of the liquid inlet pipeline and used for detecting the liquid leakage condition of the cooling liquid of the liquid inlet pipeline.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920608193.7U CN209930814U (en) | 2019-04-29 | 2019-04-29 | Lithographic apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920608193.7U CN209930814U (en) | 2019-04-29 | 2019-04-29 | Lithographic apparatus |
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| CN209930814U true CN209930814U (en) | 2020-01-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114280897A (en) * | 2021-12-28 | 2022-04-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Mask transmission assembly and photoetching system |
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2019
- 2019-04-29 CN CN201920608193.7U patent/CN209930814U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114280897A (en) * | 2021-12-28 | 2022-04-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Mask transmission assembly and photoetching system |
| CN114280897B (en) * | 2021-12-28 | 2024-01-26 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Mask plate transmission assembly and lithography system |
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