CN209880607U

CN209880607U - Novel semiconductor IGBT module combination

Info

Publication number: CN209880607U
Application number: CN201921005770.XU
Authority: CN
Inventors: 陈微微; 林世科
Original assignee: Shenzhen Hongbang Semiconductor Co Ltd
Current assignee: Shenzhen Hongbang Semiconductor Co Ltd
Priority date: 2019-07-01
Filing date: 2019-07-01
Publication date: 2019-12-31
Anticipated expiration: 2029-07-01

Abstract

The utility model discloses a novel semiconductor IGBT module combination, inverter circuit including positive semiconductor and negative semiconductor component, positive semiconductor includes the anodal negative pole of N and U, V, W three-phase output, the negative semiconductor includes anodal positive pole of P and U, V, W three-phase output, positive semiconductor and negative semiconductor all possess a plurality of grids and a plurality of projecting poles. The utility model discloses a more powerful equipment can be installed to a plurality of combinations of semiconductor LSK3PNIGBT, can win better economic benefits for the user.

Description

Novel semiconductor IGBT module combination

Technical Field

The invention relates to a semiconductor, in particular to a novel semiconductor IGBT module combination.

Background

A semiconductor IGBT module (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar power Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar junction Transistor) and MOS (Insulated Gate field effect Transistor), has the advantages of high input impedance and low conduction voltage drop, has low driving power and low saturation voltage, and is widely used as a switching device in the field of industrial control, especially in the field of frequency converters.

In the prior art, a single 6-tube IGBT is large in size, and a single package cannot make larger current, as shown in fig. 1 and 2.

SUMMERY OF THE UTILITY MODEL

The invention aims to solve the technical problem of a novel semiconductor IGBT module combination, wherein positive and negative form an inverter circuit, one positive and one negative can be used for packaging larger current, and a plurality of semiconductor IGBT modules can be combined and installed more simply and can be used as higher-power equipment.

The invention is realized by the following technical scheme: a novel semiconductor IGBT module combination comprises an inverter circuit consisting of a positive semiconductor and a negative semiconductor, wherein the positive semiconductor comprises an N pole and a U, V, W three-phase output, the negative semiconductor comprises a P pole and a U, V, W three-phase output, and the positive semiconductor and the negative semiconductor are provided with a plurality of grids and a plurality of emitters.

Preferably, the U, V, W three-phase output has a set of gates and a set of emitters.

Preferably, the U-phase output includes a G1 gate and a G2 emitter.

Preferably, the V-phase output includes a G3 gate and a G4 emitter.

Preferably, the W-phase output includes a G5 gate and a G6 emitter.

As a preferred technical scheme, the semiconductor adopts an IGBT chip and a ceramic substrate, and the IGBT chip is installed on the ceramic substrate.

As a preferred technical scheme, the current of the anode semiconductor and cathode semiconductor combination structure is 150-600A, and the withstand voltage is 600-1200V.

The invention has the beneficial effects that: 1. the current can reach 150-600A, the voltage resistance: 600-1200V;

2. new semiconductor LSK3PNIGBT, in many devices and frequency converters, inverters;

3. the novel semiconductor LSK3PNIGBT is a larger packaged IGBT with the positive and negative combination of 450A;

4. the volume is small, the space is saved, so that the air in the equipment flows fast, the heat dissipation is more effective, the failure rate of the equipment is reduced, and the service life is prolonged;

5. a plurality of combinations of novel semiconductor LSK3PNIGBT can install more powerful equipment, can win better economic benefits for the user.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a top view of a prior art product;

FIG. 2 is a schematic diagram of a prior art;

FIG. 3 is a schematic diagram of the LSK3PIGBT principle of the present invention;

FIG. 4 is a simplified diagram of the LSK3PIGBT structure of the present invention;

FIG. 5 is a schematic diagram of the LSK3NIGBT principle of the present invention;

FIG. 6 is a simplified diagram of the LSK3NIGBT structure of the present invention;

fig. 7 is a schematic view of the assembly principle of the present invention.

Detailed Description

All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.

Any feature disclosed in this specification (including any accompanying claims, abstract and drawings), may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.

In the description of the present invention, it is to be understood that the terms "one end", "the other end", "outside", "upper", "inside", "horizontal", "coaxial", "central", "end", "length", "outer end", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.

Further, in the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

The use of terms such as "upper," "above," "lower," "below," and the like in describing relative spatial positions herein is for the purpose of facilitating description to describe one element or feature's relationship to another element or feature as illustrated in the figures. The spatially relative positional terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

In the present invention, unless otherwise explicitly specified or limited, the terms "disposed," "sleeved," "connected," "penetrating," "plugged," and the like are to be construed broadly, e.g., as a fixed connection, a detachable connection, or an integral part; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

As shown in fig. 3 to 7, the inverter circuit includes a positive semiconductor including an N-pole and an U, V, W three-phase output, and a negative semiconductor including a P-pole and a U, V, W three-phase output, each of which includes a plurality of gates and a plurality of emitters.

Among them, the U, V, W three-phase output has a set of gates and a set of emitters, as shown in fig. 3 and 4, the U-phase output includes G1 gates and G2 emitters, the V-phase output includes G3 gates and G4 emitters, and the W-phase output includes G5 gates and G6 emitters.

In this embodiment, the semiconductor includes an IGBT chip and a ceramic substrate, and the IGBT chip is mounted on the ceramic substrate.

The current of the positive semiconductor and the negative semiconductor combination structure is 150-600A, the voltage resistance is 600-1200V, and the positive and negative semiconductor are combined to 450A, so that the IGBT is packaged more.

The invention has the beneficial effects that:

1. the current can reach 150-600A, the voltage resistance: 600-1200V;

The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that are not thought of through the inventive work should be included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope defined by the claims.

Claims

1. A novel semiconductor IGBT module combination is characterized in that: the inverter circuit comprises an inverter circuit consisting of a positive semiconductor and a negative semiconductor, wherein the positive semiconductor comprises an N pole, a negative pole and U, V, W three-phase output, the negative semiconductor comprises a P pole, a positive pole and U, V, W three-phase output, and the positive semiconductor and the negative semiconductor are both provided with a plurality of grids and a plurality of emitters.

2. The novel semiconductor IGBT module combination of claim 1, wherein: the U, V, W three-phase outputs each have a set of gates and a set of emitters.

3. The novel semiconductor IGBT module combination of claim 1, wherein: the U-phase output includes a G1 gate and a G2 emitter.

4. The novel semiconductor IGBT module combination of claim 1, wherein: the V-phase output includes a G3 gate and a G4 emitter.

5. The novel semiconductor IGBT module combination of claim 1, wherein: the W phase output includes a G5 gate and a G6 emitter.

6. The novel semiconductor IGBT module combination of claim 1, wherein: the semiconductor adopts an IGBT chip and a ceramic substrate, and the IGBT chip is arranged on the ceramic substrate.

7. The novel semiconductor IGBT module combination of claim 1, wherein: the current of the anode semiconductor and cathode semiconductor combination structure is 150-600A, and the withstand voltage is 600-1200V.