CN209858019U - Multi-array-surface radiation charge level indicator - Google Patents
Multi-array-surface radiation charge level indicator Download PDFInfo
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- CN209858019U CN209858019U CN201920500824.3U CN201920500824U CN209858019U CN 209858019 U CN209858019 U CN 209858019U CN 201920500824 U CN201920500824 U CN 201920500824U CN 209858019 U CN209858019 U CN 209858019U
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Abstract
The utility model relates to the field of charge level indicators, and discloses a multi-array radiation charge level indicator, wherein each detection array is arranged at different positions in a measurement space according to measurement requirements; each detection array surface comprises a scintillation crystal and an array photoelectric conversion and multiplication component, and each array photoelectric conversion and multiplication component consists of at least two micro devices which can independently complete photoelectric conversion and multiplication; the scintillation crystal is coupled with the array photoelectric conversion and multiplication components, and each array photoelectric conversion and multiplication component is provided with at least one path of electric signal channel; each array photoelectric conversion and multiplication component is connected with an input end circuit of the operation processor through at least one electric signal channel, and an output end of the operation processor is connected with an input end of the output component. The utility model discloses the directive property of full play display formula radiation detection principle is showing directional property, the space resolution ability that improves the charge level indicator, has increased the measuring range of single charge level indicator for the charge level indicator measures more accurately, reliably.
Description
Technical Field
The utility model relates to a charge level indicator field, in particular to many battle planes radiate charge level indicator.
Background
In the field of material level measurement, a non-contact measurement method is not easily influenced by severe environments such as blanking, high temperature, steam and the like in a container because the non-contact measurement method does not contact materials, and is expected to be selected. Compared with a non-contact type material level meter needing to be arranged inside a container in radar, laser, ultrasonic waves, machine vision and the like, the nuclear material level meter and the passive nuclear material level meter are arranged outside the container, and the nuclear material level meter and the passive nuclear material level meter directly penetrate through a container shell under the non-destructive condition to complete measurement, so that the non-contact type material level meter is a necessary choice for a plurality of working conditions. However, in practical production and application, the nuclear level gauge and the passive nuclear level gauge have certain defects, and the accuracy, timeliness and reliability of level measurement cannot be guaranteed.
The nuclear level indicator is provided with a strong radioactive source, so that the performance requirement on a photoelectric conversion device at the receiving end of the nuclear level indicator is not high, and the algorithm requirement is low. However, the nuclear level gauge has the defects that the strong radioactive source has serious damage to the environment and people in the use environment, and the nuclear level gauge is strictly supervised by relevant departments when in use, and is not generally used unless the nuclear level gauge is used in a necessary place. In addition, the radioactive source of the nuclear level indicator can be gradually attenuated, and the accuracy and the reliability of the level indicator can be reduced if the radioactive source is not continuously calibrated in the using process.
The passive nuclear level gauge measures the radioactive energy of radioactive impurities contained in the material in the container, and the level measurement of the material is realized through a complex algorithm. Because the radioactive energy of the material is very weak and even lower than the background noise radiation in the environment, the photoelectric conversion and multiplication device of the passive nuclear level gauge has very high requirements on the performance such as gain, noise and the like, only a high-performance photomultiplier tube can be adopted, and meanwhile, due to the influence of material variety change and background radiation, the passive nuclear level gauge needs a complex algorithm to realize accurate and reliable measurement. Meanwhile, because the photomultiplier is adopted as a photoelectric conversion and multiplication device, the passive nuclear level gauge has the following defects:
1. the temporal characteristics are poor. Due to the long single pulse time of the photomultiplier, the response time of the passive nuclear level gauge for generating level data after a large number of sample operations is long. When the container with a faster operation flow is used for material level measurement, even in the fastest response time mode, the measurement data of the passive nuclear material level meter seriously lags the actual working condition, for example, for a bin pump which feeds materials for several seconds and discharges for several seconds, the passive nuclear material level meter cannot be controlled and measured in real time.
2. The directivity is poor. Because the passive nuclear level indicator measures very weak radioactive signals in materials, the crystal area, the volume and the photomultiplier contact photosensitive area in the detector are large. And because the photomultiplier is bulky and long in length, the size of a detector part formed by the front end of the passive nuclear level meter is large. Only one measuring signal can be generated by one detector part. While a single passive nuclear level gauge cannot be equipped with two or more detector parts and is arranged in different directions. Thus, in the measurement, the passive nuclear level gauge does not have directionality. When the material level is measured, the actual position of the material level in the container cannot be clearly distinguished, and if the actual position is up, down, left or right, only the material level is known, and the position of the material is not known.
3. Large volume and heavy weight. Because the radioactivity of the materials detected by the passive nuclear level indicator is very weak, background radiation in the surrounding cosmic environment needs to be shielded in the measurement, and when peripheral radiation noise is shielded by means of lead skins and the like, the size of a shielding part cannot be in an ideal state due to the limitation of actual industrial field conditions. Meanwhile, because the photomultiplier structure has the influence of a magnetic field, in practical use, magnetic shielding is needed. The passive nuclear level indicator has the characteristics of large volume, heavy weight, inconvenient use and the like.
4. The measuring range is small. Due to the fact that the radioactive characteristics of the materials are very weak, factors such as square attenuation of distance of radiation in space propagation, air adsorption and the like are caused, and the structure size of the photomultiplier is large, a single passive nuclear level gauge can only measure at one point. Resulting in a very small actual measurement range of the passive nuclear level gauge. A large-range measurement is formed by connecting a multi-probe passive nuclear level gauge or a plurality of passive nuclear level gauges in series, and although the problem of measurement range is solved, the cost is high.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: aiming at the problems in the prior art, the utility model provides a multi-array-surface radiation charge level indicator, which realizes the function and performance that the existing charge level indicator can not complete; the performance expansibility is extremely strong; meanwhile, the size of the material level meter is greatly reduced, the time characteristic, the direction characteristic and the spatial resolution capability of the material level meter are improved, the measurement range of a single material level meter is enlarged, and the measurement is more accurate and reliable.
The technical scheme is as follows: the utility model provides a multi-array radiation charge level indicator, which comprises an arithmetic processor, an output component and at least two detection arrays, wherein each detection array is arranged at different positions in a measurement space according to measurement requirements; each detection array surface comprises a scintillation crystal, an array photoelectric conversion and multiplication component, an operation processor and an output component, wherein the array photoelectric conversion and multiplication component consists of at least two micro devices which can independently complete photoelectric conversion and multiplication; the scintillation crystal is coupled with the array photoelectric conversion and multiplication component, and the array photoelectric conversion and multiplication component is provided with at least one path of electric signal channel; each array type photoelectric conversion and multiplication component is connected with an input end circuit of the operation processor through at least one path of electric signal channel, and an output end of the operation processor is connected with an input end of the output component. .
Furthermore, the array type photoelectric conversion and multiplication components are silicon photomultipliers arranged in an array type, microchannel plate photomultipliers, microsphere photomultipliers or avalanche diodes arranged in an array type.
Further, each of the detection fronts further comprises at least one radiation shielding member, and the radiation shielding member shields a non-radiation receiving part of the scintillation crystal; or the radiation shielding component shields the scintillation crystal and the non-radiation receiving part of the array type light conversion and multiplication component; alternatively, each of the radiation-shielding members shields one of the micro devices and one of the scintillation crystals. The radiation shielding component is used for shielding cosmic background radiation noise signals in the non-measuring direction around the scintillation crystal so as to enable the measuring result of the level gauge to be more accurate; if one micro device corresponds to one scintillation crystal, the micro device and the scintillation crystal are taken as a whole, and one radiation shielding component is used for shielding the whole, so that the advantage of independent shielding is that the difference of radiation data of different positions received by each micro device is further strengthened, the material level judgment or the image generation is better realized, and the measurement result is more accurate; in practice, the radiation shielding member is preferably a lead-clad cover.
Further, each detection front also comprises a noise shielding cover, and the noise shielding cover at least covers one micro device. The signal generated by the micro device covered by the noise shielding cover is used as a background noise signal, and the arithmetic processor corrects the signals measured by other micro devices by using the background noise signal so as to generate more accurate material level related data.
Preferably, the number of electrical signal channels is at most equal to the number of micro devices. Each micro device in the array photoelectric conversion and multiplication component can have an electric signal channel, and two or more micro devices can share one electric signal channel.
Preferably, the arithmetic processor, the output component and each detection front surface are all arranged in the same shell; or, each detection array surface is respectively or jointly installed in a first shell, the arithmetic processor and the output component are installed in a second shell, the first shell is installed in a measuring space according to the measuring requirement, and each detection array surface is connected with the arithmetic processor through a connecting cable.
Furthermore, the multi-wavefront radiation level meter also comprises a data communication interface component connected with the operation processor, and the data communication interface components are connected in series through data cables among the multi-wavefront radiation level meters to carry out mutual data communication of the multi-wavefront radiation level meters. A data communication interface component is added to realize the signal series connection of a plurality of independent multi-array-surface radiation charge level indicators to form a wide-range measurement; after the data communication interface component is added, a plurality of multi-wavefront radiation level meters can be used in a wide-range level meter, a main operation processor is arranged in the wide-range level meter, mutual data communication can be carried out between the main operation processor and the operation processor between each multi-wavefront radiation level meter through the data communication interface components, the main operation processor can carry out comprehensive operation on the level result operated by the operation processor in each multi-wavefront radiation level meter, more accurate level data are output, and the level meter equivalent to a wide-range level meter is provided with a plurality of measuring probes (namely the multi-wavefront radiation level meters).
Further, the multi-array-surface radiation level meter further comprises a radioactive source device, and when the material to be detected is a non-radioactive material, the radioactive source device is placed at the position to be detected of the material to be detected. When the material to be measured is a non-radioactive material, the radioactive source device is placed at the position to be measured of the material to be measured, the multi-array radiation level indicator can measure the level information of the material to be measured through the radiation information radiated by the radioactive source device, namely, the multi-array radiation level indicator and the radioactive source device form a set of active level measuring device.
Further, array radiation charge level indicator still include probe rod and portable power source, portable power source array photoelectric conversion and multiplication part, the arithmetic processor with output element all fixes the one end of probe rod, portable power source is used for the arithmetic processor the output element with array photoelectric conversion and multiplication part power supply. Through increasing the probe rod for this charge level indicator can portable carry and measure, and charge level indicator itself need not fix in certain fixed position, and the user can place this charge level indicator in any position that wants to measure through the probe rod as required.
Preferably, the probe rod is a telescopic rod or a folding rod. The probe rod has elasticity and foldability, so that different positions can be measured conveniently.
The utility model also provides a measuring method of many wavefront radiation charge level indicator, including following step: s1: pre-storing the position information of the detection array surface in a measurement space, and presetting a mathematical model or method for generating material level data or images of the material in an operation processor; s2: after high-energy particles emitted by a material to be detected collide with the scintillation crystals in each detection array, each scintillation crystal converts kinetic energy of the high-energy particles into light energy and transmits the light energy to each micro device; s3: each micro device converts the light energy into an electric signal and sends the electric signal to the operation processor; s4: the operation processor generates material level data or images of the materials according to the preset mathematical model or method and the pre-stored position information and the electric signals, and sends the material level data or the images to the output component; s5: the output means outputs the level data or the image.
The utility model also provides a method that many battle planes radiate the charge level indicator and be used for differentiateing that material hangs the material or the bridge of taking in the container includes following step: s1: the multi-array-surface radiation level indicator is provided with two detection array surfaces, and the two detection array surfaces are arranged in a V-shaped layout in a way of facing the vertical direction of the material to be detected; s2: pre-storing the position information of the two detection array surfaces in the arithmetic processor, defining a detection area array facing to the material incoming direction of the material to be detected as an M1 array, and defining a detection area array facing to the material stacking direction of the material to be detected as an M2 array; s3: after high-energy particles emitted by a material to be detected collide with the scintillation crystals in the two detection arrays, each scintillation crystal converts kinetic energy of the high-energy particles into light energy and transmits the light energy to each micro device; s4: each micro device converts the light energy into an electric signal and sends the electric signal to the operation processor; s5: the arithmetic processor counts radiation related data of two detection area arrays in a preset time period, defines M1 array data as C1, and defines M2 array data as C2; when the minimum value of C1 is larger than the minimum value of C2 in a preset time period, judging that a material bridging phenomenon occurs in the container; when the minimum values of C1 and C2 are both larger than the respective preset values of C11 and C21 and smaller than the respective preset values of C12 and C22 in the preset time period T, judging that hanging materials occur in the container; the arithmetic processor sends the judgment result to the output component; s6: and the output component outputs the material level judgment result.
Has the advantages that: the utility model discloses an array photoelectric conversion and multiplication part that adopt integrated a plurality of micro device to constitute, as the detection array face of charge level indicator, every array micro device all is equivalent to the traditional photomultiplier of countless, has realized a lot of functions that traditional photomultiplier can't realize in the past. Because array structure has nimble self-defined characteristic, can extend array photoelectric conversion and multiplier's geometry, size and structure in a flexible way as required, consequently the utility model discloses extremely strong performance expansion ability has. The size of the charge level indicator is greatly reduced structurally, and the time characteristic of the charge level indicator is greatly improved. Meanwhile, due to the flat layout of the array type photoelectric conversion and multiplication components, the direction performance of the level indicator detection is greatly improved by coupling the flat scintillation crystal. Through setting up two and above microdevices, every microdevice homoenergetic converts the light energy that obtains from scintillation crystal into at least one and the relevant signal of telecommunication of the radiation of the material that awaits measuring, arranges through every microdevice equidirectional not, spatial position arranges and different shielding structure sets up, and the operation processor is through handling two and above signals of telecommunication, greatly promotes charge level indicator's measurement accuracy, directionality and detection scope.
Compared with the existing nuclear charge level indicator, the utility model greatly reduces the radioactivity intensity of the matched radioactive source, and solves the problem of inaccurate measurement caused by the attenuation of the radioactive source; compared with the existing passive nuclear level indicator, the passive nuclear level indicator has the advantages of remarkable time characteristic, direction characteristic and spatial resolution capability, increases the measurement range of a single level indicator, and is more accurate and reliable in measurement.
Drawings
FIG. 1 is a schematic view of the structure of a multi-wavefront radiation level gauge in embodiment 1;
FIG. 2 is a schematic structural diagram of two detection arrays sharing the same housing with the arithmetic processor and the output component;
FIG. 3 is a schematic structural diagram of two detection arrays sharing a single housing, and the arithmetic processor and the output unit sharing the same housing;
FIG. 4 is a schematic structural diagram of two detection array planes respectively located in a housing, an arithmetic processor and an output component sharing the same housing;
FIG. 5 is a schematic view of the arrangement of a multi-wavefront radiation level gauge in measuring the level of material in a large vessel;
FIG. 6 is a schematic diagram of a multi-wavefront radiation level gauge arrangement for measuring material level in a capsule;
FIGS. 7, 8 and 9 are schematic structural views of a multi-wavefront radiation level gauge in embodiment 2;
FIG. 10 is a schematic view of the structure of a multi-wavefront radiation level gauge in embodiment 3;
FIG. 11 is a schematic diagram of the configuration of two multi-wavefront radiation level gauges connected in series to form a wide range level gauge in embodiment 4;
FIG. 12 is a schematic diagram of a wide range level gauge with two multi-wavefront radiation level gauges in embodiment 5;
FIG. 13 is a schematic view of the structure of the multi-wavefront radiation level gauge with the probe in embodiment 7.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
Embodiment 1:
the embodiment provides a multi-wavefront radiation level indicator, as shown in fig. 1, which mainly comprises an arithmetic processor, an output part, a filter 9, an amplifier 10 and two detection wavefronts, wherein each detection wavefront is arranged at different positions in a measurement space according to measurement requirements; each detection array surface consists of four scintillation crystals 1 and an array type photoelectric conversion and multiplication part 2 consisting of four micro devices 5 which can independently complete photoelectric conversion and multiplication, in the embodiment, the array type photoelectric conversion and multiplication part 2 preferably uses silicon photomultiplier tubes, microchannel plate photomultiplier tubes, microsphere photomultiplier tubes or avalanche diodes which are arranged in an array type; the four scintillation crystals 1 are all coupled with the array photoelectric conversion and multiplication component 2, one array photoelectric conversion and multiplication component 2 is provided with one electric signal channel, namely, four micro devices 5 in one array photoelectric conversion and multiplication component 2 share one electric signal channel; the input end of the filter 9 is connected with the array type photoelectric conversion and multiplication component 2 through the two electric signal channels, the output end of the filter 9 is connected with the input end of the amplifier 10, the output end of the amplifier 10 is connected with the input end of the operation processor 3, and the output end of the operation processor 3 is connected with the input end of the output component 4.
Preferably, in practical applications, a display unit 11 is also connected to the output of the arithmetic processor 3 for displaying the measured filling level information or other parameter information.
The measuring method of the multi-wavefront radiation level gauge comprises the following steps:
s1: the position information of the two detection array surfaces in the measuring space and a mathematical model or method for generating material level data or images of materials are stored in the arithmetic processor 3 in advance;
s2: after high-energy particles emitted by a material to be detected collide with the four scintillation crystals 1 in each detection array, the four scintillation crystals 1 convert the kinetic energy of the high-energy particles into light energy and respectively transmit the light energy to the four micro devices 5;
s3: the four micro devices 5 convert the light energy into two paths of electric signals, send the two paths of electric signals to the filter 9, and send the two paths of electric signals to the operation processor 3 after the filtering of the filter 9 and the amplification of the amplifier 10;
s4: the operation processor 3 generates material level data or images of the materials according to the pre-stored position information and the pre-stored electric signals according to a preset mathematical model or method, and sends the material level data or the images to the output part 4;
s5: the output unit 4 outputs the level data or the image to the display 11 in the form of a switching value, a pulse signal, an analog value, or a digital value, and displays the level data or the image to the user via the display 11.
The implementation of the above method is described in detail with the following examples:
1. in the multi-wavefront radiation level indicator, each detection wavefront is formed into a 4 x 25 layout array type photoelectric conversion and multiplication component 2 by selecting 100 silicon photomultiplier tubes, and the mutual spacing of each silicon photomultiplier tube is 10 mm; presetting 4 x 25 grids on a display driven by an arithmetic processor; each grid corresponds to one silicon photomultiplier and is consistent with the actual relative position of the grid; the preset program is that when the counting data transmitted to the arithmetic processor by each silicon photomultiplier is larger than or equal to the maximum preset value in the unit time period, the grid is displayed as black on the display grid, and when the counting data is smaller than or equal to the minimum preset value, the grid is displayed as white on the display grid; when the counting data is between the two, the grid displays gray, and the gray scale is in linear correspondence with the data size.
2. When each detection array surface detects the material with radioactive impurities, in the detection range, when the material completely fills the detection space, all the grids in the display are displayed in black, and when the detection space has no material, all the grids in the display are white. When the material begins to increase or decrease, each grid in the display detects and displays the color level corresponding to the radiation counting information of the corresponding silicon photomultiplier. Where the level reached, the grid color turned black. The user can accurately judge the material level of the material according to the displayed information in the grid of the display.
Preferably, in practical application, the multi-wavefront radiation level gauge further comprises a temperature acquisition component (such as a temperature sensor with model number DS18B 20), an input end of the temperature acquisition component is positioned in the measurement space, and an output end of the temperature acquisition component is connected with an input end of the arithmetic processor 3, and is used for acquiring a temperature signal in the measurement space and sending the temperature signal to the arithmetic processor 3. In S4 described above, the arithmetic processor 3 performs temperature compensation calculation on the measured level data or image based on the received temperature information, and generates more accurate level data or image, and then in S5, the output means 4 can output the more accurate level data or image.
In practical application, the operation processor, the output part and the two detection array surfaces can be all arranged in the same shell, as shown in fig. 2, the condition is suitable for being integrated in a unified shell when the material level condition near a measuring point of an installation position only needs to be judged, and the device has the characteristics of strong integrity and convenient installation and use; or, the two detection array surfaces are both installed in the first shell, the arithmetic processor and the output component are installed in the second shell, the first shell is installed in the measurement space according to the measurement requirement, and each detection array surface is connected with the arithmetic processor through a connecting cable, as shown in fig. 3; the condition is suitable for application occasions with narrow measuring space or large environmental interference, such as severe environments of temperature, vibration and the like, and the operation processor can be effectively protected to be in a good operation state; or, the two detection array surfaces are respectively installed in a first shell, the arithmetic processor and the output component are installed in a second shell, the first shell is installed in the measuring space according to the measuring requirement, and each detection array surface is connected with the arithmetic processor through a connecting cable, as shown in fig. 4; the condition is very suitable for the condition that the detection range is large, the monitoring range is adjustable and continuous measurement in a larger range is required.
An example of the application of the multi-wavefront radiation level gauge in the present embodiment to practical production is listed below.
The present multi-wavefront radiation level gauge can be used to measure large vessels (e.g., as comprised in fig. 2, in this embodiment, the array type photoelectric conversion and multiplication component 2 preferably uses silicon photomultiplier tubes, microchannel plate photomultiplier tubes, microsphere photomultiplier tubes or avalanche diodes in array type arrangement; four scintillation crystals 1 are all coupled with an array photoelectric conversion and multiplication component 2, one array photoelectric conversion and multiplication component 2 is provided with an electric signal channel, namely, four micro devices 5 in one array type photoelectric conversion and multiplication component 2 share one electric signal channel; the input end of the filter 9 is connected with the array type photoelectric conversion and multiplication component 2 through the two electric signal channels, the output end of the filter 9 is connected with the input end of the amplifier 10, the output end of the amplifier 10 is connected with the input end of the operation processor 3, and the output end of the operation processor 3 is connected with the input end of the output component 4.
Preferably, in practical applications, a display unit 11 is also connected to the output of the arithmetic processor 3 for displaying the measured filling level information or other parameter information.
The measuring method of the multi-wavefront radiation level gauge comprises the following steps:
s1: the position information of the two detection array surfaces in the measuring space and a mathematical model or method for generating material level data or images of materials are stored in the arithmetic processor 3 in advance;
s2: after high-energy particles emitted by a material to be detected collide with the four scintillation crystals 1 in each detection array, the four scintillation crystals 1 convert the kinetic energy of the high-energy particles into light energy and respectively transmit the light energy to the four micro devices 5;
s3: the four micro devices 5 convert the light energy into two paths of electric signals, send the two paths of electric signals to the filter 9, and send the two paths of electric signals to the operation processor 3 after the filtering of the filter 9 and the amplification of the amplifier 10;
s4: the operation processor 3 generates material level data or images of the materials according to the pre-stored position information and the pre-stored electric signals according to a preset mathematical model or method, and sends the material level data or the images to the output part 4;
s5: the output unit 4 outputs the level data or the image to the display 11 in the form of a switching value, a pulse signal, an analog value, or a digital value, and displays the level data or the image to the user via the display 11.
The implementation of the above method is described in detail with the following examples:
1. in the multi-wavefront radiation level indicator, each detection wavefront is formed into a 4 x 25 layout array type photoelectric conversion and multiplication component 2 by selecting 100 silicon photomultiplier tubes, and the mutual spacing of each silicon photomultiplier tube is 10 mm; presetting 4 x 25 grids on a display driven by an arithmetic processor; each grid corresponds to one silicon photomultiplier and is consistent with the actual relative position of the grid; the preset program is that when the counting data transmitted to the arithmetic processor by each silicon photomultiplier is larger than or equal to the maximum preset value in the unit time period, the grid is displayed as black on the display grid, and when the counting data is smaller than or equal to the minimum preset value, the grid is displayed as white on the display grid; when the counting data is between the two, the grid displays gray, and the gray scale is in linear correspondence with the data size.
2. When each detection array surface detects the material with radioactive impurities, in the detection range, when the material completely fills the detection space, all the grids in the display are displayed in black, and when the detection space has no material, all the grids in the display are white. When the material begins to increase or decrease, each grid in the display detects and displays the color level corresponding to the radiation counting information of the corresponding silicon photomultiplier. Where the level reached, the grid color turned black. The user can accurately judge the material level of the material according to the displayed information in the grid of the display.
Preferably, in practical application, the multi-wavefront radiation level gauge further comprises a temperature acquisition component (such as a temperature sensor with model number DS18B 20), an input end of the temperature acquisition component is positioned in the measurement space, and an output end of the temperature acquisition component is connected with an input end of the arithmetic processor 3, and is used for acquiring a temperature signal in the measurement space and sending the temperature signal to the arithmetic processor 3. In S4 described above, the arithmetic processor 3 performs temperature compensation calculation on the measured level data or image based on the received temperature information, and generates more accurate level data or image, and then in S5, the output means 4 can output the more accurate level data or image.
In practical application, the operation processor, the output part and the two detection array surfaces can be all arranged in the same shell, as shown in fig. 2, the condition is suitable for being integrated in a unified shell when the material level condition near a measuring point of an installation position only needs to be judged, and the device has the characteristics of strong integrity and convenient installation and use; or, the two detection array surfaces are both installed in the first shell, the arithmetic processor and the output component are installed in the second shell, the first shell is installed in the measurement space according to the measurement requirement, and each detection array surface is connected with the arithmetic processor through a connecting cable, as shown in fig. 3; the condition is suitable for application occasions with narrow measuring space or large environmental interference, such as severe environments of temperature, vibration and the like, and the operation processor can be effectively protected to be in a good operation state; or, the two detection array surfaces are respectively installed in a first shell, the arithmetic processor and the output component are installed in a second shell, the first shell is installed in the measuring space according to the measuring requirement, and each detection array surface is connected with the arithmetic processor through a connecting cable, as shown in fig. 4; the condition is very suitable for the condition that the detection range is large, the monitoring range is adjustable and continuous measurement in a larger range is required.
An example of the application of the multi-wavefront radiation level gauge in the present embodiment to practical production is listed below.
The multi-wavefront radiation level meter can be used for measuring a large container (for example, any one micro device 5 in four micro devices 5 is completely covered and shielded in fig. 7. the main purpose of adding the noise shielding cover 7 is that the signal generated by the micro device 5 covered by the noise shielding cover 7 can be used as a noise floor signal by the operation processor 3, and in the process of generating the level data or the image of the material in step S4 in the embodiment 1, the signal measured by other micro devices 5 can be corrected by using the noise floor signal to generate more accurate level-related data.
Otherwise, this embodiment is identical to embodiment 2, and will not be described herein.
Embodiment 4:
the present embodiment is a further improvement of embodiment 3, and the main improvement is that the multi-wavefront radiation level gauge in the present embodiment further includes a data communication interface 8 connected to the operation processor 3, and after the data communication interface 8 is added, the data communication interface 8 can be connected in series between the multiple multi-wavefront radiation level gauges through a data cable, so as to realize the signal series connection of multiple independent multi-wavefront radiation level gauges, and perform mutual data communication of the multiple multi-wavefront radiation level gauges, thereby forming a large-scale measurement, as shown in fig. 11, two multi-wavefront radiation level gauges with the data communication interface 8 are connected in series through a data cable to form a large-scale level gauge.
Embodiment 5:
the present embodiment provides an application example of array radiation level, as shown in fig. 12, a plurality of the above-mentioned multi-wavefront radiation level meters can be used in a wide-range level meter, there is a main operation processor 12 in the wide-range level meter, data communication can be performed between the main operation processor 12 and the operation processor 3 between each multi-wavefront radiation level meter, the main operation processor 12 can perform comprehensive operation on the level results operated by the operation processor 3 in each multi-wavefront radiation level meter, so as to generate an overall level information, and output the overall level information via the output part of the wide-range level meter. A level gauge corresponding to a large range has a plurality of measuring probes (i.e., a multi-wavefront radiation level gauge).
Otherwise, this embodiment is completely the same as embodiment 3, and will not be described herein.
Embodiment 6:
the present embodiment is a further improvement of embodiment 4, and the main improvement is that the multi-wavefront radiation level meter in this embodiment further includes a radiation source device, when the material to be measured is a non-radioactive material, the radiation source device is placed at the position to be measured of the material to be measured, and the multi-wavefront radiation level meter can measure the level information of the material to be measured through the radiation information radiated by the radiation source device, that is, the multi-wavefront radiation level meter in embodiment 4 and the radiation source device form a set of active level measuring device.
Otherwise, this embodiment is completely the same as embodiment 4, and will not be described herein.
Embodiment 7:
as shown in fig. 13, the multi-wavefront radiation level gauge in this embodiment further includes a mobile power source 14 and a telescopic or foldable probe 13, the mobile power source 14, the array-type photoelectric conversion and multiplication component 2, the operation processor 3, and the output component 4 are all fixed at one end of the probe 13, and the mobile power source 14 is used for supplying power to the operation processor 3, the output component 4, and the array-type photoelectric conversion and multiplication component 2. After the probe rod is added, the material level meter can be carried and measured in a portable mode, the material level meter does not need to be fixed at a certain fixed position, and a user can place the material level meter at any position needing to be measured through the probe rod 13 according to needs.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (10)
1. A multi-wavefront radiation level gauge comprising an arithmetic processor (3), an output means (4) and at least two detection fronts, each of said detection fronts being arranged at a different position within a measurement space according to measurement requirements;
each detection array surface comprises a scintillation crystal (1) and an array type photoelectric conversion and multiplication component (2), and the array type photoelectric conversion and multiplication component (2) consists of at least two micro devices (5) which can independently complete photoelectric conversion and multiplication; the scintillation crystal (1) is coupled with the array type photoelectric conversion and multiplication component (2), and the array type photoelectric conversion and multiplication component (2) is provided with at least one path of electric signal channel;
each array type photoelectric conversion and multiplication component is connected with an input end circuit of the operation processor through at least one path of electric signal channel, and an output end of the operation processor (3) is connected with an input end of the output component (4).
2. The multi-wavefront radiation level gauge according to claim 1, wherein said arrayed photoelectric conversion and multiplication components (2) are arrayed silicon photomultipliers, microchannel plate photomultipliers, microspheric photomultipliers or arrayed avalanche diodes.
3. The multi-wavefront radiation level gauge according to claim 1, further comprising at least one radiation shielding component (6) in each of said detection fronts, said radiation shielding component (6) shielding a non-radiation receiving portion of said scintillation crystal (1); or the radiation shielding component (6) shields the scintillation crystal (1) and the non-radiation receiving part of the array type light conversion and multiplication component (2); alternatively, each of the radiation shielding members (6) shields one of the micro devices (5) and one of the scintillation crystals (1).
4. The multi-wavefront radiation level gauge according to claim 1, further comprising a noise shield (7) in each of the detection fronts, said noise shield (7) covering at least one of said micro devices (5).
5. The multi-wavefront radiation level gauge according to any of claims 1 to 4, characterized in that the number of electrical signal channels is at most equal to the number of micro devices (5).
6. The multi-wavefront radiation level gauge according to any of claims 1 to 4, characterized in that the arithmetic processor (3), the output means (4) and the detection fronts are all mounted in one and the same housing (15); or, the detection fronts are respectively or jointly arranged in a first shell (16), the arithmetic processor (3) and the output part (4) are arranged in a second shell (17), the first shell (16) is arranged in a measuring space according to the measuring requirement, and the detection fronts are connected with the arithmetic processor (3) through connecting cables.
7. The multi-wavefront radiation level gauge according to any one of claims 1 to 4, further comprising a data communication interface component (8) connected to said arithmetic processor (3), wherein a plurality of said multi-wavefront radiation level gauges are connected in series with each other through a data cable by each of said data communication interface components (8) for mutual data communication of said plurality of multi-wavefront radiation level gauges.
8. The multi-wavefront radiation level gauge according to claim 1, further comprising a radioactive source device, wherein when the material to be measured is a non-radioactive material, the radioactive source device is placed at the position to be measured of the material to be measured.
9. The multi-wavefront radiation level gauge according to any of claims 1-4, further comprising a probe (13) and a mobile power source (14), wherein the mobile power source (14), the array-type photoelectric conversion and multiplication component (2), the operation processor (3) and the output component (4) are all fixed at one end of the probe, and the mobile power source (14) is used for supplying power to the operation processor (3), the output component (4) and the array-type photoelectric conversion and multiplication component (2).
10. The multi-wavefront radiation level gauge according to claim 9, characterized in that the probe (13) is a telescopic or folding rod.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920500824.3U CN209858019U (en) | 2019-04-15 | 2019-04-15 | Multi-array-surface radiation charge level indicator |
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| CN201920500824.3U CN209858019U (en) | 2019-04-15 | 2019-04-15 | Multi-array-surface radiation charge level indicator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109974810A (en) * | 2019-04-15 | 2019-07-05 | 上海沃纳机电设备有限公司 | A kind of more fronts radiation level-sensing device and its measurement method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109974810A (en) * | 2019-04-15 | 2019-07-05 | 上海沃纳机电设备有限公司 | A kind of more fronts radiation level-sensing device and its measurement method |
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