CN209853722U - MEMS catalytic combustion sensor - Google Patents
MEMS catalytic combustion sensor Download PDFInfo
- Publication number
- CN209853722U CN209853722U CN201920436723.4U CN201920436723U CN209853722U CN 209853722 U CN209853722 U CN 209853722U CN 201920436723 U CN201920436723 U CN 201920436723U CN 209853722 U CN209853722 U CN 209853722U
- Authority
- CN
- China
- Prior art keywords
- layer
- thin film
- film layer
- catalytic combustion
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The utility model belongs to the technical field of the sensor, concretely relates to MEMS catalytic combustion sensor and processing method thereof. The MEMS catalytic combustion sensor comprises a first film part and a second film part, wherein two sides of the second film part are respectively and symmetrically connected with the first film part through a first porous magnetic layer; the first thin film part comprises a silicon substrate, and a first silicon nitride thin film layer, a first silicon oxide thin film layer and a first heating sensitive resistance layer which are sequentially arranged by taking the silicon substrate as a substrate; the second film part comprises a second silicon nitride film layer, a second silicon dioxide film layer, a second heating sensitive resistance layer and a precious metal catalyst layer which are sequentially arranged; has the advantages of anti-poisoning, quick response and high signal-to-noise ratio.
Description
Technical Field
The utility model belongs to the technical field of the sensor, concretely relates to MEMS catalytic combustion sensor and processing method thereof.
Background
In the coal mining process, in order to ensure the operation safety, the concentration of various alkane gas is often required to be detected, and a catalytic combustion sensor is commonly used at the moment. The traditional catalytic combustion sensor comprises a detection element and a compensation element, wherein the detection element and the compensation element form a measuring bridge, combustible gas is subjected to catalytic combustion under the action of a detection element carrier and a catalyst to release heat, the resistance value of a sensitive element in the sensor is increased, the bridge is unbalanced, and an electric signal in direct proportion to the concentration of the combustible gas is output. However, the traditional catalytic combustion sensor has the defects of large device volume, high working temperature, large power consumption and the like; when the concentration of various alkane gases is detected in the underground environment of a coal mine, the catalytic combustion sensor is easily poisoned, because the sulfur is a common underground toxic substance and contains sulfides with different forms, the content of the sulfur is the most hydrogen sulfide, and if the hydrogen sulfide is adsorbed on the surface of the catalyst of the catalytic combustion sensor before the gas to be detected, the catalyst cannot adsorb and catalyze various alkane gas molecules; and the sulfur-containing gas is easy to form sulfate and is attached to the surface of the catalyst, so that the contact of various alkane gas molecules and the catalyst is limited.
The invention provides a catalytic combustion sensor based on MEMS (Micro Electro-Mechanical System), which is a sensor integrating Mechanical and electronic components based on physical effect on a substrate by utilizing an integrated circuit process and a Micro assembly process i, and has the advantages of small volume, small space occupancy, convenience for integration and functionalization, low power consumption, resource and energy saving, low production cost and the like;
however, the MEMS catalytic combustion sensor still has the problem of sensor poisoning, and how to accelerate the response time of the MEMS catalytic combustion sensor is also a technical problem existing at present.
Therefore, there is an urgent need to develop an anti-poisoning, fast-responding MEMS catalytic combustion sensor.
SUMMERY OF THE UTILITY MODEL
In order to solve the above technical problem, an object of the present invention is to provide a MEMS catalytic combustion sensor and a method for manufacturing the same, which has the advantages of anti-poisoning, rapid response and high signal-to-noise ratio.
In order to achieve the above object, the present invention provides, in one aspect, a method of: an MEMS catalytic combustion sensor comprises a first film part and a second film part, wherein two sides of the second film part are respectively and symmetrically connected with the first film part through a first porous magnetic layer;
the first thin film part comprises a silicon substrate, and a first silicon nitride thin film layer, a first silicon oxide thin film layer and a first heating sensitive resistance layer which are sequentially arranged by taking the silicon substrate as a substrate;
the second film part comprises a second silicon nitride film layer, a second silicon dioxide film layer, a second heating sensitive resistance layer and a precious metal catalyst layer which are sequentially arranged.
Preferably, a third silicon oxide film layer and a third silicon nitride film layer are sequentially arranged on the first heating sensitive resistance layer, and hole structures are formed in the third silicon oxide film layer and the third silicon nitride film layer.
Preferably, a fourth silicon oxide thin film layer and a fourth silicon nitride thin film layer are respectively arranged on two sides of the noble metal catalyst layer, and the fourth silicon oxide thin film layer is connected with the second heating sensitive resistance layer.
Preferably, a first silicon nitride film layer and a fifth silicon nitride film layer are respectively arranged on two sides of the silicon substrate.
Preferably, the noble metal catalyst layer is a palladium/alumina sol thin film layer or a platinum/alumina sol thin film layer.
Preferably, the noble metal catalyst layer is a film with a thickness of 5-15 microns.
Preferably, the first heating sensitive resistance layer is a platinum metal thin film layer, a palladium metal thin film layer or a platinum-palladium alloy thin film layer.
Compared with the prior art, the utility model discloses following beneficial effect has:
the utility model discloses with the electric current, various alkane gas in the environment adsorbs takes place catalytic combustion reaction on the noble metal catalysis layer, and various alkane gas is for carbon dioxide and water by catalytic combustion to release a large amount of heats, the heat makes the resistance value of first heating sensitive resistance layer rise, according to the change of resistance value, various alkane gas content in the computational environment.
MEMS catalytic combustion sensor compare in current MEMS gaseous catalytic combustion sensor, its mechanical strength is high, first silicon nitride film layer can be regarded as the medium passive film, forms tensile stress to the silicon substrate, first silicon oxide film layer can be regarded as the buffer layer and play insulating effect, forms compressive stress to the silicon substrate, tensile stress and compressive stress offset the back mutually, remaining stress is less, is making MEMS catalytic combustion sensor time, mechanical strength is high, stable in structure can not cause and collapses.
The both sides of second film part are respectively through first porous magnetism symmetric connection first film part, first porous magnetic layer has obvious adsorption to sulfur-containing gas, prevents the sensor poisoning phenomenon that sulfur-containing gas caused.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the embodiments or the prior art descriptions will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive labor.
Fig. 1 is a schematic structural diagram of a MEMS catalytic combustion sensor provided by an embodiment of the present invention;
FIG. 2 is a schematic process flow diagram of a MEMS catalytic combustion sensor.
Wherein, each reference mark in the figure is:
100-a first film portion; 200-a second film portion; 300-a first porous magnetic layer; 101-a silicon substrate; 102-a first silicon nitride thin film layer; 103-a first silicon oxide thin film layer; 104-a first heating sensitive resistive layer; 105-a third silicon oxide thin film layer; 106-a third silicon nitride film layer; 107-fifth silicon nitride film layer; 202-a second silicon nitride thin film layer; 203-a second silicon dioxide film layer; 204-a second heating sensitive resistive layer; 205-a fourth silicon oxide thin film layer; 206-a fourth silicon nitride thin film layer; 207-noble metal catalytic layer.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "length" - "width" - "up" - "down" - "front" - "back" - "left" - "right" - "vertical" - "horizontal" - "top" - "bottom" - "inside" - "outside" etc. indicate orientations or positional relationships based on those shown in the drawings, which are merely for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a particular orientation-be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" - "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted" -; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
As shown in fig. 1, an aspect of the present invention provides a MEMS catalytic combustion sensor, including a first film portion 100, a second film portion 200, two sides of the second film portion 200 are respectively connected to the first film portion 100 symmetrically through a first porous magnetic layer 300;
the first thin film part 100 comprises a silicon substrate 101, and a first silicon nitride thin film layer 102, a first silicon oxide thin film layer 103 and a first heating sensitive resistance layer 104 which are sequentially arranged by taking the silicon substrate 101 as a substrate;
the second thin film portion 200 includes a second silicon nitride thin film layer 202, a second silicon dioxide thin film layer 203, a second heating sensitive resistance layer 204, and a noble metal catalyst layer 207, which are sequentially disposed.
Specifically, the embodiment of the present invention is powered on by current, various alkane gases in the environment are adsorbed on the noble metal catalyst layer 207 to undergo catalytic combustion reaction, and the various alkane gases are catalytically combusted into carbon dioxide and water, and release a large amount of heat, and the heat makes the resistance value of the first heating sensitive resistance layer 104 rise, and according to the change of the resistance value, the content of various alkane gases in the environment is calculated. The utility model discloses response time is short, and response time is less than 6 seconds, and the signal-to-noise ratio is high.
The embodiment of the utility model provides a MEMS catalytic combustion sensor compare in current MEMS gas catalytic combustion sensor, its mechanical strength is high, first silicon nitride film layer 102 can regard as the medium passive film, forms tensile stress to silicon substrate 101, first silicon oxide film layer 103 can regard as the buffer layer and play insulating effect, forms compressive stress to silicon substrate 101, and the back is offset mutually to tensile stress and compressive stress, and remaining stress is less, is making the MEMS catalytic combustion sensor time, mechanical strength is high, and stable in structure can not cause and collapses.
The embodiment of the utility model provides a both sides of second film part 200 are respectively through first porous magnetic layer 300 symmetric connection first film part 100, first porous magnetic layer 300 has obvious adsorption to sulfur-containing gas, prevents the sensor poisoning phenomenon that sulfur-containing gas caused.
The first porous magnetic layer 300 may be a magnetic porous carbon nanocomposite, such as a magnetic porous carbon nanocomposite prepared by using natural polymer alginic acid as a carbon source and combining with iron oxide magnetic nanoparticles, but is not limited to the above-mentioned materials, and may be any material having magnetism and a porous structure.
Preferably, a third silicon oxide thin film layer 105 and a third silicon nitride thin film layer 106 are sequentially disposed on the first heating sensitive resistor layer 104, and a hole structure is formed in the third silicon oxide thin film layer 105 and the third silicon nitride thin film layer 106. The third silicon oxide film layer 105 can play a role in buffering and insulation, and the third silicon nitride film layer 106 can be used as a dielectric passivation film.
Preferably, a fourth silicon oxide thin film layer 205 and a fourth silicon nitride thin film layer 206 are respectively disposed on two sides of the noble metal catalyst layer 207, and the fourth silicon oxide thin film layer 205 is connected to the second heating sensitive resistance layer 204. The fourth silicon oxide film layer 205 can play a role of buffering and insulation, and the fourth silicon nitride film layer 206 can be used as a dielectric passivation film.
Preferably, a first silicon nitride film layer 102 and a fifth silicon nitride film layer 107 are respectively disposed on two sides of the silicon substrate 101. The fifth silicon nitride film layer 107 may serve as a dielectric passivation film to prevent damage to the silicon substrate 101.
Preferably, the noble metal catalyst layer 207 may be a palladium/alumina sol thin film layer or a platinum/alumina sol thin film layer. The noble metal catalyst layer 207 supports the noble metal catalyst in the alumina carrier, and can uniformly disperse the noble metal catalyst in a three-dimensional space, thereby increasing the contact area between various alkane gases and the noble metal catalyst.
Further preferably, the noble metal catalyst layer 207 may be a palladium/alumina sol thin film layer.
Further preferably, the noble metal catalyst layer is a thin film with a thickness of 5-15 microns. The thickness of 5-15 microns can fully catalyze the combustion reaction of various alkane gases. As a specific embodiment of the present invention, the noble metal catalyst layer may have a film thickness of 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 or 15 micrometers.
Preferably, the first heating sensitive resistance layer may be a platinum metal thin film layer, a palladium metal thin film layer, or a platinum-palladium alloy thin film layer. Further preferably, the first heating sensitive resistance layer may be a platinum metal thin film layer.
With reference to fig. 2, another aspect of the present invention provides a method for processing a MEMS catalytic combustion sensor, including the following steps:
s01, depositing a silicon nitride film layer on the silicon substrate by adopting a chemical vapor deposition method;
s02, growing a silicon oxide film layer on the silicon nitride film layer;
s03, sputtering and depositing a heating sensitive resistance layer on the silicon oxide film layer, and etching the heating sensitive resistance layer to obtain a first film part 100 and a first film part 200;
s04, disposing a noble metal oxide layer 207 on the heating sensitive resistor layer of the first film portion 200;
s05, etching the silicon substrate of the first film portion 200;
and S06, carrying out splinter treatment on the first film part 100 and the first film part 200, and connecting the first film part 100 and the first film part 200 through the first porous magnetic layer 300 after the splinter treatment to obtain the MEMS catalytic combustion sensor.
Specifically, in step S01, a silicon nitride thin film layer may be deposited by LPCVD method (Low Pressure Chemical Vapor Deposition method); the existing conventional process can be adopted for deposition;
as a specific embodiment of the present invention, the Mutiplex PECVD apparatus produced by the semiconductor manufacturing industry (STS) group has two independent RF systems of high frequency 13.56MHz and low frequency 380kHz, and the mixing time ratio of high frequency to low frequency is 1: 1, wherein SiH4: 6sccm (standard cubic centimeter per minute, flow rate of 1 cubic centimeter per minute), NH3：20sccm，N2: 300sccm, gas pressure 600mTorr (millitorr), temperature 300/250 ℃; and testing the stress to 120 MPa.
In step S02, a silicon oxide thin film layer may be deposited by LPCVD, or by TEOS (tetraethyl orthosilicate) source; the existing conventional process can be adopted for deposition; the thickness of the silicon oxide film layer can be 1.5-3 micrometers, and preferably 2 micrometers.
As a specific embodiment of the present invention, SUSS equipment can be used, the deposition temperature is 550-700 ℃, the surface roughness is small under the growth temperature condition lower than 600 ℃, and SiCl can be increased2H2Flow rate, high temperature annealing (c) ((b))>900 deg.c) to relieve stress.
The silicon nitride film layer and the silicon oxide film layer pass through stress tests (tensile stress and compressive stress are offset), and the flexibility of the silicon nitride film layer and the silicon oxide film layer is small and is about 80-100 Mpa. After the silicon substrate is corroded, the bridge surface cannot collapse after partial structure of the silicon substrate is sacrificed.
In step S03, a heating sensitive resistance layer is sputter deposited on the silicon oxide thin film layer, and the heating sensitive resistance layer is etched to obtain a first thin film portion 100 and a first thin film portion 200; the existing conventional process can be adopted for deposition and etching;
the resistance value of the sensitive resistance layer is adjusted by etching and heating the sensitive resistance layer, so that the reaction time is short, the response is quick, the recovery time is short and the recovery is quick when the catalytic combustion reaction is carried out.
As an embodiment of the present invention, a VECOO apparatus may be used for Pt platinum sputtering. When the heating sensitive resistance layer is etched, a pattern can be formed by tackifying, developing and gold etching, and the method specifically comprises the following steps: HMDS (hexamethyldisilazane) is subjected to tackifying treatment, positive photoresist is subjected to spin coating, an image surface is divided, a single exposure area covering the largest chip area is used as a minimum imaging unit, the wavelength is 3650-4358 angstroms, and the actual resolution is about 1 micron; developing TMAH (tetramethylammonium hydroxide), removing photoresist with 10% KOH alkaline solution at 80 deg.C, oven drying at 120 deg.C for 10 min, and etching to obtain pattern SF6The temperature of the inner lining is 120 ℃, the temperature of the inner pipe is 100 ℃, the temperature of the air pipe is 35 ℃ and the temperature of the cavity is 60 ℃ when sulfur hexafluoride is used as etching gas.
In step S04, a noble metal oxide layer 207 is disposed on the heating sensitive resistor layer of the first film portion 200; the noble metal oxide layer 207 may be a platinum/alumina sol thin film layer or a palladium/alumina sol thin film layer, and the platinum/alumina sol or the palladium/alumina sol is coated on the heat sensitive resistor layer of the first film portion 200.
In the step S05, etching the silicon substrate of the first film portion 200;
after the upper layer structure of the silicon substrate is completed, the lower layer structure of the silicon substrate is etched by a TMAH (Tetramethylammonium Hydroxide) wet method, generally, the TMAH concentration is 80%, the temperature is 80 ℃, the etching rate is high, the surface is smooth, only the silicon substrate 101 of the first thin film portion 100 is remained, and the silicon substrates 101 of the rest portions are removed by wet etching, including etching the silicon substrate of the first thin film portion 200.
In step S06, the first thin film portion 100 and the first thin film portion 200 are split, and the first thin film portion 100 and the first thin film portion 200 are connected through the first porous magnetic layer 300 after the splitting process, so as to obtain the MEMS catalytic combustion sensor according to each of the above embodiments.
Preferably, a third silicon oxide thin film layer 105 and a third silicon nitride thin film layer 106 are sequentially deposited on the heating sensitive resistance layer of the first thin film portion 100, and the third silicon oxide thin film layer 105 and the third silicon nitride thin film layer 106 are etched;
a fourth silicon oxide thin film layer 205 is deposited on the heating sensitive resistor layer of the first thin film portion 200, a noble metal oxide layer 207 is coated on the fourth silicon oxide thin film layer 205, and a fourth silicon nitride thin film layer 206 is deposited on the noble metal oxide layer 207.
Specifically, after the step S03, the method further includes, at S07, depositing a third silicon oxide thin film layer 105 on the heat sensitive resistor layer of the first thin film portion 100, and depositing a fourth silicon oxide thin film layer 205 on the heat sensitive resistor layer of the first thin film portion 200;
step S04 is performed to dispose a noble metal oxide layer 207 on the heating sensitive resistor layer of the first film portion 200;
after the step S04, the method further includes, in step S08, depositing a third silicon nitride thin film layer 106 on the heating sensitive resistor layer of the first thin film portion 100, and etching the third silicon nitride thin film layer 106 and the third silicon oxide thin film layer 105;
a fourth silicon nitride film layer 206 is deposited on the noble metal oxide layer 207.
The deposition method in each of the above embodiments can be performed by using the existing process.
As a specific embodiment of the present invention, after the deposition growth of the third silicon nitride thin film layer 106 and the fourth silicon nitride thin film layer 206, the etched pattern of the third silicon nitride thin film layer 105 and the third silicon nitride thin film layer 106 and the first heating sensitive resistance layer are the same pattern.
Preferably, after the step S05, the method further includes, S09, annealing the noble metal oxide layer 207.
The annealed noble metal oxide layer 207 has a porous gas-sensitive structure, is a micro-porous structure, has a larger specific surface area, can adsorb more various alkane gases to react with the catalyst, has uniform catalyst distribution, i.e., catalytic active centers are uniformly and stably distributed, can reduce sintering and sublimation of the noble metal catalyst, and can ensure that various alkane gases are more fully contacted with the catalyst and react more quickly.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and all modifications, equivalents, and improvements made within the spirit and principles of the present invention are intended to be included within the scope of the invention.
Claims (7)
1. An MEMS catalytic combustion sensor is characterized by comprising a first film part and a second film part, wherein two sides of the second film part are respectively and symmetrically connected with the first film part through a first porous magnetic layer;
the first thin film part comprises a silicon substrate, and a first silicon nitride thin film layer, a first silicon oxide thin film layer and a first heating sensitive resistance layer which are sequentially arranged by taking the silicon substrate as a substrate;
the second film part comprises a second silicon nitride film layer, a second silicon dioxide film layer, a second heating sensitive resistance layer and a precious metal catalyst layer which are sequentially arranged.
2. The MEMS catalytic combustion sensor of claim 1, wherein a third silicon oxide thin film layer and a third silicon nitride thin film layer are sequentially disposed on the first heating sensitive resistor layer, and a hole structure is formed in the third silicon oxide thin film layer and the third silicon nitride thin film layer.
3. The MEMS catalytic combustion sensor of claim 1 wherein a fourth silicon oxide thin film layer and a fourth silicon nitride thin film layer are disposed on each side of the precious metal catalyst layer, and the fourth silicon oxide thin film layer is connected to the second heat sensitive resistive layer.
4. The MEMS catalytic combustion sensor of claim 1 wherein a first silicon nitride thin film layer and a fifth silicon nitride thin film layer are disposed on either side of the silicon substrate.
5. The MEMS catalytic combustion sensor of claim 1 wherein the precious metal catalytic layer is a palladium/alumina sol thin film layer or a platinum/alumina sol thin film layer.
6. The MEMS catalytic combustion sensor of claim 5 wherein the noble metal catalyst layer has a film thickness of 5-15 microns.
7. The MEMS catalytic combustion sensor of claim 1 wherein the first heater sensitive resistive layer is a platinum metal thin film layer, a palladium metal thin film layer, or a platinum palladium alloy thin film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920436723.4U CN209853722U (en) | 2019-04-01 | 2019-04-01 | MEMS catalytic combustion sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920436723.4U CN209853722U (en) | 2019-04-01 | 2019-04-01 | MEMS catalytic combustion sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209853722U true CN209853722U (en) | 2019-12-27 |
Family
ID=68936008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920436723.4U Active CN209853722U (en) | 2019-04-01 | 2019-04-01 | MEMS catalytic combustion sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209853722U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109970022A (en) * | 2019-04-01 | 2019-07-05 | 深圳邺诚科技有限公司 | A kind of MEMS catalytic combustion sensor and its processing method |
-
2019
- 2019-04-01 CN CN201920436723.4U patent/CN209853722U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109970022A (en) * | 2019-04-01 | 2019-07-05 | 深圳邺诚科技有限公司 | A kind of MEMS catalytic combustion sensor and its processing method |
| CN109970022B (en) * | 2019-04-01 | 2024-07-16 | 深圳邺诚科技有限公司 | MEMS catalytic combustion sensor and processing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ali et al. | Sensing of COVID‐19 antibodies in seconds via aerosol jet nanoprinted reduced‐graphene‐oxide‐coated 3D electrodes | |
| EP1687617A1 (en) | Miniaturized multi-gas and vapor sensor devices and associated methods of fabrication | |
| CN103630582B (en) | A kind of MEMS humidity sensor and preparation method | |
| US7911010B2 (en) | Apparatus and method for microfabricated multi-dimensional sensors and sensing systems | |
| CN103226125B (en) | Micromechanical solid electrolyte sensor device and corresponding production method | |
| US20130277217A1 (en) | Thin film micromachined gas sensor | |
| CN105987935B (en) | MEMS gas sensor and preparation method thereof | |
| US9196917B2 (en) | Fuel cell membrane electrode assembly | |
| Huang et al. | A CMOS wireless biomolecular sensing system-on-chip based on polysilicon nanowire technology | |
| US9105935B2 (en) | Method for making fuel cell membrane electrode assembly | |
| US5804462A (en) | Method for forming a multiple-sensor semiconductor chip | |
| CN108254420B (en) | Hydrogen sensor for rapidly detecting low-concentration hydrogen | |
| CN112694062A (en) | Wafer-level MEMS gas sensor array based on TSV, preparation method and application | |
| CN209853722U (en) | MEMS catalytic combustion sensor | |
| JP6730280B2 (en) | Limiting current type gas sensor | |
| CN109970022B (en) | MEMS catalytic combustion sensor and processing method thereof | |
| CN116223570B (en) | Gas sensor and processing method thereof | |
| CN114014257A (en) | Preparation method and application of silicon-based MEMS gas sensor chip | |
| US20070108052A1 (en) | Hydrogen Sensor | |
| CN118032873A (en) | Hydrogen sulfide gas sensor and preparation process thereof | |
| US7213465B2 (en) | Micromechanical sensor | |
| CN117309950A (en) | Gas-sensitive film structure and preparation method thereof, MEMS gas sensor and preparation method thereof | |
| CZ393190A3 (en) | Sensor based on self-supporting fiber and process for producing thereof | |
| Bíró et al. | Micro-pellistor with integrated porous alumina catalyst support | |
| CN115047030A (en) | Gas sensor for lithium battery thermal runaway early warning and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |