CN209803644U - APD reverse bias voltage temperature self-adaptive circuit suitable for laser ranging - Google Patents
APD reverse bias voltage temperature self-adaptive circuit suitable for laser ranging Download PDFInfo
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- CN209803644U CN209803644U CN201920538562.XU CN201920538562U CN209803644U CN 209803644 U CN209803644 U CN 209803644U CN 201920538562 U CN201920538562 U CN 201920538562U CN 209803644 U CN209803644 U CN 209803644U
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Abstract
The utility model discloses a APD reverse bias temperature self-adaptation circuit suitable for laser rangefinder, including the detector circuit, still include MCU minimum system, reverse bias generating circuit, temperature detection circuitry, reverse bias generating circuit includes drive chip U5, MOS pipe Q4, diode D3, inductance L3, inductance L6, temperature detection circuitry includes temperature sensor U11; the utility model discloses can effectively improve the working property of APD detector under different ambient temperature, reduce the influence of temperature variation to APD detector sensitivity, improve response speed, sensitivity, security greatly. The utility model discloses satisfy and test under the environment of various extreme conditions, realize full self-adaptation's optimization and handle.
Description
Technical Field
The utility model belongs to the technical field of laser photoelectricity, a required reverse bias voltage circuit of APD detector is related to, concretely relates to APD reverse bias voltage temperature self-adaptation circuit suitable for laser rangefinder.
Background
The working principle of the APD detector is as follows: the Avalanche Photodiode (APD) converts incident light signals into photoelectrons in a semiconductor device, performs avalanche amplification on the photoelectrons by utilizing an avalanche breakdown principle generated by reverse bias on the basis of the photoelectrons, and has the outstanding advantages of high response speed, small volume and the like, thereby becoming a preferred detector for receiving laser echoes in laser ranging.
Most of the existing APD detector reverse bias voltage generation circuits in the market are in a fixed voltage value mode, and the APD detector in actual use can meet different environmental temperatures, so that different optimal operating points and performance parameters can be obtained. For example, a detector of a laser range finder needs 45V bias voltage when working at high temperature, 40V bias voltage at normal temperature, and 30V bias voltage at low temperature, and the APD reverse bias voltage is not changed with temperature or is changed in a rough range by the conventional design, so that the optimal performance of the detector module cannot be realized. In view of the poor temperature adaptability of the existing driving circuit, a circuit capable of adaptively adjusting the reverse bias voltage required by the APD according to the temperature is proposed.
SUMMERY OF THE UTILITY MODEL
in view of this, for solving above-mentioned prior art not enough, the utility model aims at providing a APD reverse bias temperature self-adaptation circuit suitable for laser rangefinder effectively improves the working property of APD detector under different ambient temperature, reduces the influence of temperature variation to APD detector sensitivity, has improved response speed, sensitivity, security greatly.
In order to achieve the above object, the utility model adopts the following technical scheme:
An APD reverse bias temperature self-adaptive circuit suitable for laser ranging comprises a detector circuit, an MCU minimum system, a reverse bias generation circuit and a temperature detection circuit, wherein the reverse bias generation circuit and the temperature detection circuit are respectively connected with the MCU minimum system; the MCU minimum system reads temperature information from the temperature detection circuit, controls the reverse bias generation circuit to generate a proper APD reverse bias, and provides the APD reverse bias required by the work for the detector circuit;
The reverse bias generation circuit comprises a driving chip U5, a MOS tube Q4, a diode D3, an inductor L3 and an inductor L6, wherein a pin 10 of the driving chip U5 is connected with a grid electrode of the MOS tube Q4, a drain electrode of the MOS tube Q4 is connected with the diode D3 and grounded through a capacitor C31, and a source electrode of the MOS tube Q4 is grounded; the 11 pin of the driving chip U5 is connected with the drain electrode of the MOS transistor Q4 through an inductor L3, the 11 pin of the driving chip U5 is grounded through a capacitor C28 and a capacitor C32 which are connected in parallel, and the 11 pin of the driving chip U5 is connected with a positive power supply GL; the pin 4 of the driving chip U5 is connected with the pin 5 through a resistor R18, one end of a resistor R18 is respectively connected with an inductor L6 and is grounded after being connected with a capacitor C45, a capacitor C44 and a resistor R24 which are connected in series are connected between the pin 5 and the pin 7 of the driving chip U5, the resistor R21 is connected with a capacitor C44 and a resistor R24 which are connected in series in parallel, the pin 5 of the driving chip U5 is connected with the inductor L6, one end of the inductor L6 is grounded through a capacitor C45, and the other end of the inductor L6 is respectively grounded and connected with a power supply APD +;
The temperature detection circuit comprises a temperature sensor U11, a capacitor C50 is connected between pins 2 and 3 of the temperature sensor U11, and a pin 1 of the temperature sensor U11 is a VDD end and is connected with a voltage V02. pin 2 is the VOUT terminal, pin 3 is grounded.
Further, the MCU minimum system adopts an STM32 series single chip microcomputer.
Further, pin 7 of the MCU minimum system is a reset port, and pin 1 of the MCU minimum system is a U1 output.
Furthermore, the MCU minimum system is respectively connected with a debugging interface and an ARM decoupling capacitor.
Furthermore, the pin 6 of the driving chip U5 is connected to the pin 7 through the resistor R23 and then grounded through the resistor R25.
Furthermore, the pin 8 of the driving chip U5 is grounded through a resistor R17 and a capacitor C39 connected in series.
Further, the pin 9 of the driving chip U5 is grounded.
Further, the positive power supply GL of the reverse bias generation circuit is + 5V.
further, the VOUT end of the 2 pin of the temperature sensor U11 is + 3.3V.
The utility model has the advantages that:
The utility model discloses a APD reverse bias temperature self-adaptation circuit suitable for laser rangefinder effectively improves the working property of APD detector under different ambient temperature, reduces the influence of temperature variation to APD detector sensitivity, has improved response speed, sensitivity, security greatly. The utility model can meet the requirement of testing under various extreme conditions, and realize the optimization processing of complete self-adaption;
The utility model discloses in, including MCU minimum system, reverse bias voltage generating circuit, temperature detection circuit are connected with MCU minimum system respectively, and reverse bias voltage generating circuit is connected with detector circuit; the MCU minimum system reads temperature information from the temperature detection circuit, controls the reverse bias generation circuit to generate a proper APD reverse bias, and provides the APD reverse bias required by the work for the detector circuit; all modules and circuits are matched with each other, the logic is compact, the response is efficient and fast, and the self-adaptive capacity is strong.
The reverse bias generation circuit comprises a driving chip U5, an MOS tube Q4, a diode D3, an inductor L3 and an inductor L6, and the influence of temperature change on the working performance of the APD detector is reduced to the minimum by real-time regulation and control of the MCU minimum system and the temperature detection circuit.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is an overall schematic block diagram of the present invention;
Fig. 2 is a schematic circuit diagram of a reverse bias generating circuit according to the present invention;
FIG. 3 is a schematic circuit diagram of the temperature detection circuit of the present invention;
fig. 4 is a schematic diagram of a MCU minimum system.
Detailed Description
the following provides specific embodiments, which will further clearly, completely and specifically explain the technical solutions of the present invention. The present embodiment is the best embodiment based on the technical solution of the present invention, but the scope of the present invention is not limited to the following embodiments.
an APD reverse bias temperature self-adaptive circuit suitable for laser ranging comprises a detector circuit, an MCU minimum system, a reverse bias generation circuit and a temperature detection circuit, wherein the reverse bias generation circuit and the temperature detection circuit are respectively connected with the MCU minimum system; the MCU minimum system reads temperature information from the temperature detection circuit, controls the reverse bias generation circuit to generate a proper APD reverse bias, and provides the APD reverse bias required by the work for the detector circuit;
Furthermore, the temperature detection circuit detects the temperature of the external environment in real time and outputs data information corresponding to the temperature after changing along with the external temperature; the MCU minimum system is a circuit core, reads temperature information from temperature detection and controls a reverse bias generation circuit to generate a proper APD bias voltage; the reverse bias generation circuit is controlled by a program of the MCU minimum system to generate APD reverse bias; the detector circuit is an important circuit for laser ranging, and the reverse bias voltage provides working conditions for the detector circuit;
The reverse bias generation circuit comprises a driving chip U5, a MOS tube Q4, a diode D3, an inductor L3 and an inductor L6, wherein a pin 10 of the driving chip U5 is connected with a grid electrode of the MOS tube Q4, a drain electrode of the MOS tube Q4 is connected with the diode D3 and grounded through a capacitor C31, and a source electrode of the MOS tube Q4 is grounded; the 11 pin of the driving chip U5 is connected with the drain electrode of the MOS transistor Q4 through an inductor L3, the 11 pin of the driving chip U5 is grounded through a capacitor C28 and a capacitor C32 which are connected in parallel, and the 11 pin of the driving chip U5 is connected with a positive power supply GL; the pin 4 of the driving chip U5 is connected with the pin 5 through a resistor R18, one end of a resistor R18 is respectively connected with an inductor L6 and is grounded after being connected with a capacitor C45, a capacitor C44 and a resistor R24 which are connected in series are connected between the pin 5 and the pin 7 of the driving chip U5, the resistor R21 is connected with a capacitor C44 and a resistor R24 which are connected in series in parallel, the pin 5 of the driving chip U5 is connected with the inductor L6, one end of the inductor L6 is grounded through a capacitor C45, and the other end of the inductor L6 is respectively grounded and connected with a power supply APD +;
The temperature detection circuit comprises a temperature sensor U11, a capacitor C50 is connected between pins 2 and 3 of the temperature sensor U11, and a pin 1 of the temperature sensor U11 is a VDD end and is connected with a voltage V02. Pin 2 is the VOUT terminal, pin 3 is grounded.
Further, the temperature sensor U11 employs a temperature sensor TMP235, the output of which is a linear voltage variation, i.e. the output voltage varies with the temperature variation. When the temperature changes, the voltage collected by the MCU minimum system changes, and the reverse bias generation circuit is controlled to generate corresponding voltage by combining the detector parameter data packet, so that the MCU minimum system works in the optimal state.
Further, the positive power supply GL of the reverse bias generation circuit is + 5V.
Furthermore, the pin 6 of the driving chip U5 is connected to the pin 7 through the resistor R23 and then grounded through the resistor R25.
Furthermore, the pin 8 of the driving chip U5 is grounded through a resistor R17 and a capacitor C39 connected in series.
Further, the pin 9 of the driving chip U5 is grounded.
Further, the VOUT end of the 2 pin of the temperature sensor U11 is + 3.3V.
Further, pin 7 of the MCU minimum system is a reset port, and pin 1 of the MCU minimum system is a U1 output.
Furthermore, the MCU minimum system is respectively connected with a debugging interface and an ARM decoupling capacitor.
Further, the MCU minimum system adopts an STM32 series single chip microcomputer. Further, the minimum MCU system in the present embodiment is STM32F101CBT 6.
Furthermore, the reverse bias generating circuit is program controllable and adjustable, namely controlled by the MCU minimum system.
In this embodiment, the detector of the laser range finder needs 45V bias voltage when working at high temperature, 40V bias voltage at normal temperature, and 30V bias voltage at low temperature, and the APD reverse bias voltage is designed conventionally and does not change with temperature or roughly within a range, so that the optimal performance of the detector module cannot be realized.
To sum up, the utility model discloses a APD reverse bias temperature self-adaptation circuit suitable for laser rangefinder effectively improves the working property of APD detector under different ambient temperature, reduces the influence of temperature variation to APD detector sensitivity, has improved response speed, sensitivity, security greatly. The utility model discloses satisfy and test under the environment of various extreme conditions, realize full self-adaptation's optimization and handle.
The essential features, the basic principle and the advantages of the invention have been shown and described above. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments, and the above embodiments and descriptions are only illustrative of the principles of the present invention, and that the present invention can be modified in various ways according to the actual situation without departing from the spirit and scope of the present invention, and these modifications and improvements are all within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. an APD reverse bias temperature adaptive circuit suitable for laser ranging, comprising a detector circuit, characterized in that: the device comprises an MCU minimum system, a reverse bias generation circuit and a temperature detection circuit, wherein the reverse bias generation circuit and the temperature detection circuit are respectively connected with the MCU minimum system, and the reverse bias generation circuit is connected with a detector circuit; the MCU minimum system reads temperature information from the temperature detection circuit, controls the reverse bias generation circuit to generate APD reverse bias, and provides the APD reverse bias required by the work for the detector circuit;
The reverse bias generation circuit comprises a driving chip U5, a MOS tube Q4, a diode D3, an inductor L3 and an inductor L6, wherein a pin 10 of the driving chip U5 is connected with a grid electrode of the MOS tube Q4, a drain electrode of the MOS tube Q4 is connected with the diode D3 and grounded through a capacitor C31, and a source electrode of the MOS tube Q4 is grounded; the 11 pin of the driving chip U5 is connected with the drain electrode of the MOS transistor Q4 through an inductor L3, the 11 pin of the driving chip U5 is grounded through a capacitor C28 and a capacitor C32 which are connected in parallel, and the 11 pin of the driving chip U5 is connected with a positive power supply GL; the pin 4 of the driving chip U5 is connected with the pin 5 through a resistor R18, one end of a resistor R18 is respectively connected with an inductor L6 and is grounded after being connected with a capacitor C45, a capacitor C44 and a resistor R24 which are connected in series are connected between the pin 5 and the pin 7 of the driving chip U5, the resistor R21 is connected with a capacitor C44 and a resistor R24 which are connected in series in parallel, the pin 5 of the driving chip U5 is connected with the inductor L6, one end of the inductor L6 is grounded through a capacitor C45, and the other end of the inductor L6 is respectively grounded and connected with a power supply APD +;
The temperature detection circuit comprises a temperature sensor U11, a capacitor C50 is connected between pins 2 and 3 of the temperature sensor U11, and a pin 1 of the temperature sensor U11 is a VDD end and is connected with a voltage V02. Pin 2 is the VOUT terminal, pin 3 is grounded.
2. the APD reverse bias temperature adaptive circuit suitable for laser ranging of claim 1, wherein: and the MCU minimum system adopts an STM32 series single chip microcomputer.
3. The APD reverse bias temperature adaptive circuit suitable for laser ranging according to claim 2, wherein: and a pin 7 of the MCU minimum system is a reset port, and a pin 1 of the MCU minimum system is output by U1.
4. the APD reverse bias temperature adaptive circuit suitable for laser ranging according to claim 2, wherein: and the MCU minimum system is respectively connected with a debugging interface and an ARM decoupling capacitor.
5. The APD reverse bias temperature adaptive circuit suitable for laser ranging of claim 1, wherein: the pin 6 of the driving chip U5 is connected with the pin 7 through a resistor R23 and then grounded through a resistor R25.
6. The APD reverse bias temperature adaptive circuit suitable for laser ranging of claim 1, wherein: the pin 8 of the driving chip U5 is grounded through a resistor R17 and a capacitor C39 which are connected in series.
7. the APD reverse bias temperature adaptive circuit suitable for laser ranging of claim 1, wherein: the pin 9 of the driving chip U5 is grounded.
8. the APD reverse bias temperature adaptive circuit suitable for laser ranging of claim 1, wherein: the positive power supply GL of the reverse bias generating circuit is + 5V.
9. The APD reverse bias temperature adaptive circuit suitable for laser ranging of claim 1, wherein: and the VOUT end of the 2 pin of the temperature sensor U11 is + 3.3V.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920538562.XU CN209803644U (en) | 2019-04-19 | 2019-04-19 | APD reverse bias voltage temperature self-adaptive circuit suitable for laser ranging |
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| CN201920538562.XU CN209803644U (en) | 2019-04-19 | 2019-04-19 | APD reverse bias voltage temperature self-adaptive circuit suitable for laser ranging |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109901638A (en) * | 2019-04-19 | 2019-06-18 | 洛阳顶扬光电技术有限公司 | A kind of APD reverse biased temperature self-adaptation circuit suitable for laser ranging |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109901638A (en) * | 2019-04-19 | 2019-06-18 | 洛阳顶扬光电技术有限公司 | A kind of APD reverse biased temperature self-adaptation circuit suitable for laser ranging |
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