CN209769005U - Silicon-based electron smog chip of coating film - Google Patents
Silicon-based electron smog chip of coating film Download PDFInfo
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- CN209769005U CN209769005U CN201920383062.3U CN201920383062U CN209769005U CN 209769005 U CN209769005 U CN 209769005U CN 201920383062 U CN201920383062 U CN 201920383062U CN 209769005 U CN209769005 U CN 209769005U
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Abstract
the utility model discloses a silicon-based electron smog chip of coating film, including following part: the device comprises a silicon substrate (1), wherein a micro-column (2) array or a micro-pore (3) array, an inlet end (13) and an outlet end (14) are arranged on the silicon substrate (1), the outer side wall of the micro-column (2) is a coated side wall, the inner wall of the micro-pore (3) is a coated inner wall, and a plurality of micro-channels (12) are defined by the micro-column (2) array or a smoke liquid channel (15) penetrating through the micro-pore (3) is arranged on the silicon substrate (1); the glass cover (5) is provided with an air hole (6) penetrating through the glass cover (5); the glass cover (5) and the silicon substrate (1) are fixedly connected by a bonding process. The utility model discloses select the substrate that silicon regarded as atomizing chip, its is with low costs, has greatly reduced the manufacturing cost of electron smog chip, is convenient for large-scale production this type atomizing chip.
Description
Technical Field
the utility model belongs to the technical field of the electron cigarette, concretely relates to silicon-based electron smog chip of coating film.
Background
The heating materials for electronic cigarettes in actual application or reported in the patent at present mainly include metal, ceramic, polymer, silicon and the like, and the most common heating wire is made of metal. Wherein, the electronic cigarette with non-adjustable temperature uses a nichrome wire or a Kanthal heating wire, and the latter is an alloy containing nickel, chromium, aluminum, iron and the like; the temperature control electronic cigarette uses pure nickel, pure titanium or stainless steel as a heating wire. The heating element is in the shape of line, thread, sheet, net, etc., and the tobacco juice can contact with the surface of the heating element or contact with the inside of the heating element to be heated and atomized. For the thread-shaped or linear heating element, the tobacco juice has the problem of uneven heating on the surface due to the non-planar configuration; for the sheet heating element, although the heating is relatively more uniform, the smoke liquid is easily dispersed unevenly because the surface of the element is lack of the smoke liquid dispersing component, so that the local area is heated unevenly; the net heating element increases the contact area between air and the heating element, so that the smoke liquid can be atomized more sufficiently, but the smoke liquid dispersing component is also lacked, and the problem of uneven heating caused by uneven smoke liquid distribution still exists. For this reason, the surface contact heating element generally requires oil-guiding cotton or the like to assist dispersion of the smoke liquid, and these materials themselves may cause new uneven heating problems such as poor contact with the heating element.
In order to improve the problems and the defects, a heating flow channel can be manufactured in a silicon material through a micromachining technology, smoke liquid is heated and atomized in the silicon by utilizing the micromachining performance of the silicon and the self electric heating performance, the advantage of high heat energy utilization efficiency is achieved, the use of an additional smoke liquid dispersing material is abandoned, however, as a semiconductor material, the resistivity and the temperature relation of the silicon and the metal are obviously different, the resistivity of almost all the metals is linearly changed along with the temperature in the range of low temperature and small temperature change of the metal, and the main factor determining the temperature relation of the resistivity of the semiconductor is the change relation of the carrier concentration and the mobility along with the temperature, specifically, the carrier concentration is exponentially increased and the mobility is simultaneously increased at low temperature, and the resistivity is reduced along with the increase of the temperature; at room temperature, the carrier concentration is unchanged, the mobility is reduced along with the temperature rise, and the resistivity is increased along with the temperature rise; at high temperatures, the carrier concentration will increase exponentially and while the mobility decreases with increasing temperature, the overall effect is that the resistivity decreases with increasing temperature. Due to the complex relationship between the resistivity and the temperature of the semiconductor, when the silicon-based heating material is actually applied to the electronic cigarette, the resistance of the silicon-based heating material fluctuates sharply in the smoking process of the electronic cigarette and at the high temperature required by the electronic cigarette to atomize the cigarette liquid, so that the atomization of the cigarette liquid is unstable, and the fluctuation of the number of smoking openings and sensory quality such as the amount of the cigarette liquid is directly caused.
SUMMERY OF THE UTILITY MODEL
the utility model provides a silicon-based electron smog chip of coating film, it has effectively solved current atomizing chip and has been heated inhomogeneous, the problem that suction mouth number and smog volume fluctuation are big.
The utility model discloses a following technical scheme realizes:
the utility model discloses the first aspect relates to a silicon-based electron smog chip of coating film, including following part:
the device comprises a silicon substrate 1, wherein the silicon substrate 1 is provided with a micro-column 2 array or a micro-pore 3 array, an inlet end 13 and an outlet end 14, the outer side wall of the micro-column 2 is a coated side wall, the inner wall of the micro-pore 3 is a coated inner wall, and the micro-column 2 array defines a plurality of micro-channels 12 or a smoke liquid channel 15 penetrating through the micro-pore 3 is arranged on the silicon substrate 1;
a glass cover 5, which is provided with an air hole 6 penetrating through the glass cover 5;
the glass cap 5 is fixedly connected with the silicon substrate 1 by a bonding process.
In a preferred embodiment of the present invention, the diameter of the microcolumn (2) or the micro-pore (3) is 20 to 300. mu.m.
In the preferred embodiment of the present invention, the plating metal on the outer side wall of the plating film of the microcolumn 2 or the inner wall of the plating film of the micro-hole 3 is the standard electrode potential ratio Si/SiO2Standard electrode potential correcting metal or alloy (e.g. SiO)2the standard electrode potential of the/Si is-0.888 v, Ni2+The standard electrode potential of Ni is-0.257 v, meaning that the electrode potential of the latter is more positive than that of the former, Ni2+Electrons generated during the oxidation of silicon are available to be reduced to Ni), and the electrochemical reaction formula is as follows:
Men++ne-→Me (1)
Si+2H2O→SiO2+4H++4e- (2)
SiHx+2H2O→SiO2+(4+x)H++(4+x)e-
The utility model discloses the second aspect relates to a preparation method of silicon-based electron smog chip of coating film, including following step:
a. Etching an array of micropillars 2 or an array of micro-holes 3 and an inlet end 13 and an outlet end 14 on a silicon substrate 1;
b. Cleaning the silicon substrate 1 etched in the step a to obtain a clean silicon substrate electroplating surface;
c. Coating the outer side wall of the microcolumn 2 or the inner wall of the micropore 3 by using a coating method to obtain a coated silicon wafer 101;
d. Manufacturing an array of air holes 6 penetrating through the glass cover 5;
e. bonding the coated silicon wafer 101 obtained in the step c and the glass cover 5 obtained in the step d by using a bonding process to obtain a bonded silicon wafer 102;
f. and filling an inlet pipe 9 or a liquid guide material at an inlet end 13 of the bonded silicon wafer 102, filling an outlet pipe 10 or a liquid guide material at an outlet end 14, and then inserting a lead into the bonded silicon wafer 102 to obtain the coated silicon-based atomized chip 103.
In a preferred embodiment of the present invention, an array of air holes 6 is made through the cross-section of the glass cover 5 in step d by mechanical or chemical means.
The utility model discloses in, adopt dry process or wet etching technique to come the sculpture silicon, the sculpture goes out including 2 arrays of micropillars or 3 arrays of micropore and entry end 13 and the silicon substrate 1 of exit end 14. Wherein, when dry etching (such as deep reactive ion etching) is adopted, an array of vertical micro-holes 3 or an array of micro-pillars 2 can be etched, as shown in fig. 1 and 2.
in a preferred embodiment of the present invention, the coating process in step c includes a chemical coating process and an electro-coating process. When the electro-thermal metal coating is made by electroplating, highly doped silicon such as p + type (100) crystal orientation silicon wafer (1-10 Ω cm) is preferred. And after etching is finished, cleaning the photoresist on the etched wafer by using acetone or nitric acid, and then ashing the photoresist in a high-temperature oxygen atmosphere to remove the residual polymer film deposited in the deep reactive ion etching process. Then, the wafer was immersed in 50% hydrofluoric acid to remove the oxide film formed during the ashing process and the residual carbon from the oxide-stripped surface. Before nickel plating, the wafer was immersed in 1% hydrofluoric acid, then rinsed with deionized water and spin dried to obtain a clean plated surface.
In the preferred embodiment of the present invention, the metal commonly used in electroless plating is nickel, and electroless nickel plating is a chemical reduction process, including the catalytic reduction of nickel ions in an aqueous solution (containing a reducing agent) and the subsequent deposition of metallic nickel, which does not require the use of electrical energy. The electroless plating is performed by immersing the produced silicon substrate 1 in a nickel plating bath containing nickel ions and a reducing agent. To maintain a stable reaction, nickel ion organic complexing agents, buffers, stabilizers, and the like may be added to the plating bath. Specifically, the nickel plating bath contains: (1) a source of nickel cations, such as nickel chloride or nickel sulfate; (2) reducing agents, such as hypophosphite anions, borohydrides or hydrazines; (3) prevent nickel phosphate from precipitating and complexing nickel ionsthe organic complexing agent can be used as a buffer agent to prevent the pH from being rapidly reduced, such as organic hydroxycarboxylic acids like glycolic acid, hydroxypropionic acid, citric acid or malic acid; (4) "active agents" that increase the rate of nickel deposition, such as succinic acid anions, fatty acid anions, and alkali metal fluorides; (5) stabilizers to prevent the decomposition of the solution, such as thiourea, sodium ethylxanthate, lead sulfide or tin sulfide; (6) pH regulators which keep the pH constant, such as the acidic regulators sulfuric acid and the alkaline regulators sodium hydroxide and sodium carbonate; (7) wetting agents to increase bath wetting, such as sulfated alcohols, fatty acid sulfonates, sulfonated oils. The plating bath may be an alkaline plating bath (pH8-10) or an acidic plating bath (pH 4-6). The plating bath may include, but is not limited to, the following types: (1) nickel sulfamate Ni (NH)2SO3)2Bathing; (2) a watt bath containing nickel sulfate; (3) a nickel fluoroborate bath; (4) a nickel chloride bath.
In the preferred embodiment of the present invention, the types of the electroless plating film mainly include an alloy plating film and a metal plating film. The alloy coating is to deposit nickel alloy on a silicon substrate, wherein the alloy comprises binary alloy (Ni-P, Ni-B and the like), ternary alloy (Ni-P-B, Ni-W-P, Ni-Co-P and the like) or quaternary alloy (Ni-W-Cu-P); the metal coating is pure nickel. P-type or n-type silicon may be selected depending on the type of alloy being plated.
In the preferred embodiment of the present invention, the electroplating method includes the following two methods:
The method comprises the following steps: the intrinsic oxides in the above-mentioned micropores 3 and microcolumns 2 are removed with hydrofluoric acid, and then the surface is wetted by immersion in methanol or ethanol. The silicon substrate 1 was placed in a nickel plating bath. In the nickel plating bath process, a Pt-plated Ti electrode is used as an anode, and a cathode is a micropore 3 and a silicon substrate array of microcolumns 2 for electroplating. During electroplating, the plating solution is stirred and maintained at a certain temperature (45-65 ℃) to obtain uniform nickel ion distribution. By selecting the plating conditions, nickel or nickel alloy can be deposited along the inner wall of the micro-hole 3 or the outer wall of the micro-column 2 without being deposited on the top and bottom levels outside the micro-column 2. The surface thickness of the deposited metal film can be further adjusted by varying the plating time.
the second method comprises the following steps: a thickness of silicon oxide was deposited on top of the micro-well 3 array silicon substrate using plasma enhanced chemical vapor deposition (PEVCD). The surface is then wetted by immersion in methanol or ethanol. The wafer was placed in a nickel plating bath. Electroplating by adopting the nickel plating method of the first method. No deposition occurs on the top horizontal surface of the silicon substrate due to the presence of the thin oxide mask layer. The method can coat all the inner wall surfaces of the micropores 3 with nickel and its alloys. The thickness of the plating film can be adjusted by changing the plating time and the current magnitude.
the silicon substrate is preferably a highly doped p + type or n + type silicon wafer because the conventional p-type or n-type silicon wafer has high resistivity and is difficult to plate, and if a common p-type or n-type silicon wafer is selected, an additional high-temperature doping measure is required to reduce the silicon resistance, and as shown in fig. 8 and 9, a phosphorus/boron doped layer 7 is required to be doped on the conventional p-type or n-type silicon wafer to reduce the resistance of the silicon substrate 1 and increase the adhesion with the plating layer. The high-doped silicon wafer can fully conduct electricity, can reduce silicon resistance, provides a conductive path between an electrode and a micro channel during electroplating, and does not need to deposit a seed layer, namely a doping layer.
For pure nickel plating, the plating bath is of the same type as electroless plating. The electroplating mode can be to deposit a nickel or nickel alloy electrothermal film on the inner wall of the micro-hole 3 and also to deposit a nickel or nickel alloy electrothermal film on the outer wall of the micro-column 2.
the electroplating can adopt the direct current electroplating or the pulse electroplating and other industrialized electroplating modes.
The electroplated coating can be pure nickel or nickel alloy. The nickel alloy for electroplating may be selected from, but not limited to, nickel-cobalt alloy, nickel-copper alloy, nickel-cobalt-iron alloy, nickel-copper-iron alloy, etc., and the deposition manner is irregular deposition. Wherein, the nickel-cobalt codeposition can adopt a sulfate, chloride-sulfate or sulfamate plating bath; the nickel-copper codeposition adopts a citrate and pyrophosphate plating bath; the nickel-cobalt-iron irregular electrodeposition adopts a sulfate plating bath; the nickel-copper-iron irregular electrodeposition uses an acetate bath.
The coating metal of the utility model is not limited to nickel or nickel alloy, theoretically, only the standard electrode potential ratio Si/SiO2The more positive standard electrode potential metal of (2) can be deposited on silicon.
A coated silicon wafer 101 plated with nickel or a nickel alloy is shown in fig. 3.
in the preferred embodiment of the present invention, Pyrex glass is preferred as the glass cover 5, and the heat resistance is excellent. The porous through holes 6 are formed on the glass surface by mechanical (such as micro-drilling technology) and chemical (such as hydrofluoric acid corrosion) and the like, and the aperture ranges from nanometer to micron.
in the preferred embodiment of the present invention, the silicon substrate 1 and the glass cover 5 adopt an anodic bonding process, which bonds the coated silicon wafer 101 and the glass cover 5 by an anodic bonding method at a high temperature and a high voltage. The high temperature at the time of bonding improves the adhesion between the electroplated nickel layer and the doped silicon. After bonding is complete, a bonded silicon wafer 102 is obtained, as shown in fig. 4 and 6. The bonded silicon wafer with the outer wall plated with nickel or nickel alloy of the micro-column 2 array is shown in fig. 4, and the structure comprises a silicon substrate 1, a glass cover 5, the micro-column 2 array and a nickel or nickel alloy plating film 4. A silicon wafer with the inner wall of the array of micro-holes 3 plated with nickel or nickel alloy is shown in fig. 6, 7 and 8, and the structure comprises a silicon substrate 1, a glass cover 5, a doped layer 7, the array of micro-holes 3 and a nickel or nickel alloy plating film 4. A silicon wafer with an array of wells 3 on its inner surface plated with nickel or nickel alloy, as shown in fig. 9, the structure comprises a silicon substrate 1, a silicon dioxide layer 8, a glass cover 5, a doped layer 7, an array of wells 3, and a nickel or nickel alloy plating 4. Doped layer 7 is a phosphorus/boron doped layer.
In the utility model, a tobacco juice inlet pipe 9 and a tobacco juice outlet pipe 10 are buried at a tobacco juice inlet end 13 and an outlet end 14 of a bonded silicon wafer 102 and are sealed, wherein the inlet pipe 9 is connected with a tobacco juice driving device such as a micropump or a micro driver, the outlet pipe 10 is connected with a liquid storage bin, so that a loop is formed among the tobacco juice driving device, a chip and the liquid storage bin, the diameter of a pipeline is determined according to the thickness of the chip and the fluidity of the tobacco juice, and the pipeline material is selected from elastic or hard insulating materials such as high-temperature-resistant and corrosion-resistant quartz, high polymer and the like; or the tobacco juice inlet end 13 and the tobacco juice outlet end 14 of the chip are filled with liquid guiding materials capable of absorbing tobacco juice, such as cotton, fiber and the like, and the other end of the chip extends into the tobacco juice in the liquid storage bin, so that a loop is formed between the chip and the liquid storage bin. The smoke liquid is rapidly dispersed in the micro flow channels within the chip by external driving pressure, capillary action of the liquid guiding member, and surface tension between the smoke liquid and the micro flow channels. The buried wire 11 is a wire inserted into the chip to electrically connect the metal microchannel with an external power source, and the wire and the chip can be fixed by welding or sintering, and high-temperature conductive liquid adhesive can be used as an electrical connection point. Finally, the coated silicon-based atomization chip 103 is manufactured, as shown in fig. 10 and fig. 11.
The utility model discloses in, silicon is the substrate material commonly used in micro-electro-mechanical systems (MEMS), can be at silicon material surface and various patterns of inside preparation and structure through little processing technique, because the electrodeposition process can deposit metal and alloy in concave yield and inhomogeneous surface, consequently can be applied to the MEMS field. Silicon as a substrate for metal deposition has the following characteristics: silicon and deposited metal generally have weak interaction, which leads to three-dimensional island-shaped growth of metal in silicon, once metal deposition occurs on the silicon surface, electrochemical reaction is possible on the deposition surface, and the reaction rate is faster than that of the uncovered silicon surface; silicon is used as a semiconductor, electrons are transferred to a valence band through conduction band or hole injection, a cathode reaction or a deposition reaction occurs, and a photoinduced excitation characteristic is also provided; porous semiconductors are not insulating, which makes it possible to electrodeposit metals in the pore walls of silicon, and silicon is inexpensive and the surface can act as a reducing agent, allowing some metals to spontaneously deposit. The metals nickel and its alloys are used for the following reasons: the physical and chemical properties and the electric heating property of the pure nickel and the nickel-based alloy meet the requirements of working parameters of the electronic cigarette such as voltage, power and atomization temperature; secondly, the nickel and the alloy thereof have low price, and the cost requirement of the electronic cigarette product is met; and thirdly, the nickel and the alloy thereof are common plating layer metals in the electroplating industry, and the metal deposition process is simple, mature and reliable.
The utility model discloses preparation and the theory of operation of device as follows:
The method comprises the steps of firstly etching a micro-column 2 array or a micro-hole 3 array on a silicon substrate 1 by adopting a micro-processing technology, defining a smoke liquid micro-channel by the micro-column 2 array or the micro-hole 3 array, then plating a nickel or nickel alloy electric heating film on the surface of the micro-channel by adopting an electroplating or chemical plating mode, and bonding a glass cover 5 on the surface of the silicon by adopting a bonding process. The smoke liquid is guided into a micro-channel inside the chip through a liquid guide part (such as liquid guide cotton or a liquid guide pipeline) connected with the atomization chip, is heated and atomized while being dispersed, and the generated aerosol is released from the air holes 6 of the porous glass.
In the utility model, in the process of coating, especially when coating the inner wall of the micropore 3, the direction perpendicular to the inner wall of the micropore 3 can be selected for coating, thus only the inner wall of the micropore 3 is coated, and the bottom of the micropore 3 is not coated; or, the coating can be performed in the direction perpendicular to the inner wall of the micro-hole 3 and the direction perpendicular to the bottom of the micro-hole 3, and when the coating is performed in the direction perpendicular to the bottom of the micro-hole 3, the non-porous area of the array of micro-holes 3 needs to be covered with the silicon dioxide layer 8 to prevent the coating from being on the non-porous area, as shown in fig. 9.
has the advantages that:
1. The utility model discloses pioneering nature provides an electron smog chip, and it is through sculpture micropore or microcolumn on the silicon substrate, and micropore or microcolumn are injectd a plurality of miniflow way or tobacco juice runner with the silicon substrate, and these miniflow way or tobacco juice runner constitute tobacco juice dispersion component for the electron tobacco juice is dispersed in miniflow way or micropore, and electron tobacco juice dispersion is even, generates heat evenly, and the tobacco juice atomizes more fully.
2. The utility model discloses a carry out the coating film on silica-based heating material surface for electronic cigarette liquid can not receive the influence that silica-based resistance sharply fluctuates at the in-process of being heated, and the cigarette liquid atomization is stable, and suction mouth number and taste keep unanimous.
3. The utility model discloses select the substrate that silicon regarded as atomizing chip, its is with low costs, has greatly reduced the manufacturing cost of electron smog chip, is convenient for large-scale production this type atomizing chip.
Drawings
FIG. 1 is a schematic structural view of a micro-pillar array micro-channel silicon substrate;
FIG. 2 is a schematic structural view of a micro-pore array micro-channel silicon substrate;
FIG. 3 is a schematic diagram of a silicon substrate after plating the outer wall of the micro-column array with nickel or nickel alloy;
FIG. 4 is a schematic view of a bonded silicon wafer after plating the outer wall of the micropillar array with nickel or nickel alloy;
FIG. 5 is a schematic view of a bonded silicon wafer split after plating nickel or nickel alloy on the outer wall of the micro-column array;
FIG. 6 is a schematic view of a bonded silicon wafer after plating the inner walls of the microwell array with nickel or a nickel alloy;
FIG. 7 is a schematic diagram showing the separation of a bonded silicon wafer after plating nickel or nickel alloy on the inner wall of a micropore array;
FIG. 8 is a cross-sectional view of a silicon wafer after plating the walls of the microwell array with nickel or a nickel alloy;
FIG. 9 is a cross-sectional view of a silicon wafer after plating the walls of the microwell array with nickel or a nickel alloy;
FIG. 10 is a schematic structural diagram of a micro-column array coated atomization chip;
FIG. 11 is a schematic structural diagram of a micro-pore array coated atomizing chip;
Wherein the reference numerals have the following meanings:
1-silicon substrate, 2-microcolumn, 3-micropore, 4-coating, 5-glass cover, 6-air hole, 7-doping layer, 8-silicon dioxide layer, 9-inlet pipe, 10-outlet pipe, 11-lead, 12-micro channel, 13-inlet end, 14-outlet end, 15-smoke liquid channel, 101-coating silicon wafer, 102-bonding silicon wafer and 103-coating silicon-based atomization chip.
Detailed Description
Example 1
the structure of the coated silicon-based electronic cigarette atomization chip in the embodiment is as follows:
The micro-flow channel structure comprises a silicon substrate 1, wherein a micro-column 2 array, an inlet end 13 and an outlet end 14 are arranged on the silicon substrate 1, the outer side wall of the micro-column 2 is a coated side wall, and a plurality of micro-flow channels 12 are defined by the micro-column 2 array;
A glass cover 5, which is provided with an air hole 6 penetrating through the glass cover 5;
the glass cover 5 is fixedly connected with the silicon substrate 1 by using an anodic bonding process.
In this embodiment, an electroplating method is adopted to coat a film on the outer side wall of the microcolumn 2, and nickel is used as a coating metal.
example 2
the structure of the coated silicon-based electronic cigarette atomization chip in the embodiment is as follows:
The device comprises a silicon substrate 1, wherein the silicon substrate 1 is provided with a micropore 3 array, an inlet end 13 and an outlet end 14, the inner wall of each micropore 3 is a coated inner wall, and the silicon substrate 1 is provided with a smoke liquid flow passage 15 penetrating through the micropores 3;
A glass cover 5, which is provided with an air hole 6 penetrating through the glass cover 5;
the glass cover 5 is fixedly connected with the silicon substrate 1 by using an anodic bonding process.
in the embodiment, the inner walls of the micropores 3 are plated with films by a chemical plating method, and the adopted plating metal is Ni-P alloy.
Claims (3)
1. the utility model provides a silicon-based electron smog chip of coating film which characterized in that includes following part:
the device comprises a silicon substrate (1), wherein a micro-column (2) array or a micro-pore (3) array, an inlet end (13) and an outlet end (14) are arranged on the silicon substrate (1), the outer side wall of the micro-column (2) is a coated side wall, the inner wall of the micro-pore (3) is a coated inner wall, and a plurality of micro-channels (12) are defined by the micro-column (2) array or a smoke liquid channel (15) penetrating through the micro-pore (3) is arranged on the silicon substrate (1);
The glass cover (5) is provided with an air hole (6) penetrating through the glass cover (5);
the glass cover (5) and the silicon substrate (1) are fixedly connected by a bonding process.
2. The coated silicon-based electronic cigarette atomization chip of claim 1, wherein the coated metal on the coated outer side wall of the microcolumn (2) or the coated inner wall of the micropore (3) is a standard electrode potential ratio Si/SiO2a metal or alloy having a more positive standard electrode potential.
3. the coated silicon-based electronic cigarette atomization chip according to claim 1, wherein the diameter of the micro-column (2) or the micro-hole (3) is 20-300 microns.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920383062.3U CN209769005U (en) | 2019-03-25 | 2019-03-25 | Silicon-based electron smog chip of coating film |
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| CN201920383062.3U CN209769005U (en) | 2019-03-25 | 2019-03-25 | Silicon-based electron smog chip of coating film |
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| CN209769005U true CN209769005U (en) | 2019-12-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109770438A (en) * | 2019-03-25 | 2019-05-21 | 云南中烟工业有限责任公司 | A kind of plated film silicon-based electronic aerosolization chip and preparation method thereof |
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2019
- 2019-03-25 CN CN201920383062.3U patent/CN209769005U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109770438A (en) * | 2019-03-25 | 2019-05-21 | 云南中烟工业有限责任公司 | A kind of plated film silicon-based electronic aerosolization chip and preparation method thereof |
| CN109770438B (en) * | 2019-03-25 | 2023-07-25 | 云南中烟工业有限责任公司 | Film-coated silicon-based electronic cigarette atomization chip and preparation method thereof |
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